TW296838U - Column redundancy circuit for a semiconductor memory device - Google Patents

Column redundancy circuit for a semiconductor memory device

Info

Publication number
TW296838U
TW296838U TW083215092U TW83215092U TW296838U TW 296838 U TW296838 U TW 296838U TW 083215092 U TW083215092 U TW 083215092U TW 83215092 U TW83215092 U TW 83215092U TW 296838 U TW296838 U TW 296838U
Authority
TW
Taiwan
Prior art keywords
memory device
semiconductor memory
redundancy circuit
column redundancy
column
Prior art date
Application number
TW083215092U
Other languages
English (en)
Inventor
Jae-Gu Roh
Yong-Sik Seok
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW296838U publication Critical patent/TW296838U/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
TW083215092U 1992-05-06 1992-10-03 Column redundancy circuit for a semiconductor memory device TW296838U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920007621A KR950000275B1 (ko) 1992-05-06 1992-05-06 반도체 메모리 장치의 컬럼 리던던시

Publications (1)

Publication Number Publication Date
TW296838U true TW296838U (en) 1997-01-21

Family

ID=19332732

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083215092U TW296838U (en) 1992-05-06 1992-10-03 Column redundancy circuit for a semiconductor memory device

Country Status (8)

Country Link
US (1) US5325334A (zh)
JP (1) JP2555252B2 (zh)
KR (1) KR950000275B1 (zh)
DE (1) DE4236099C2 (zh)
FR (1) FR2691000B1 (zh)
GB (1) GB2266795B (zh)
IT (1) IT1255933B (zh)
TW (1) TW296838U (zh)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05334895A (ja) * 1992-05-28 1993-12-17 Texas Instr Japan Ltd 半導体記憶装置
US5469401A (en) * 1992-07-14 1995-11-21 Mosaid Technologies Incorporated Column redundancy scheme for DRAM using normal and redundant column decoders programmed with defective array address and defective column address
KR0119888B1 (ko) * 1994-04-11 1997-10-30 윤종용 반도체 메모리장치의 결함구제방법 및 그 회로
KR0131721B1 (ko) * 1994-06-08 1998-04-15 김주용 반도체 소자의 컬럼 리던던시 장치
KR0130030B1 (ko) * 1994-08-25 1998-10-01 김광호 반도체 메모리 장치의 컬럼 리던던시 회로 및 그 방법
US5528539A (en) * 1994-09-29 1996-06-18 Micron Semiconductor, Inc. High speed global row redundancy system
US5805512A (en) * 1995-02-09 1998-09-08 Kabushiki Kaisha Toshiba Semiconductor memory device
US5838620A (en) * 1995-04-05 1998-11-17 Micron Technology, Inc. Circuit for cancelling and replacing redundant elements
KR0157344B1 (ko) * 1995-05-25 1998-12-01 김광호 반도체 메모리 장치의 퓨즈소자 회로
KR100217910B1 (ko) * 1995-08-17 1999-09-01 김영환 플래쉬 메모리셀의 리페어 회로 및 리페어 방법
US5592102A (en) * 1995-10-19 1997-01-07 Altera Corporation Means and apparatus to minimize the effects of silicon processing defects in programmable logic devices
US5812468A (en) * 1995-11-28 1998-09-22 Micron Technology, Inc. Programmable device for redundant element cancel in a memory
US5828599A (en) * 1996-08-06 1998-10-27 Simtek Corporation Memory with electrically erasable and programmable redundancy
KR100450115B1 (ko) * 1996-11-08 2004-11-26 주식회사 하이닉스반도체 반도체메모리장치의컬럼리던던시회로
US5996096A (en) * 1996-11-15 1999-11-30 International Business Machines Corporation Dynamic redundancy for random access memory assemblies
US6091258A (en) * 1997-02-05 2000-07-18 Altera Corporation Redundancy circuitry for logic circuits
US6034536A (en) * 1997-02-05 2000-03-07 Altera Corporation Redundancy circuitry for logic circuits
US5912579A (en) * 1997-02-06 1999-06-15 Zagar; Paul S. Circuit for cancelling and replacing redundant elements
CA2202692C (en) * 1997-04-14 2006-06-13 Mosaid Technologies Incorporated Column redundancy in semiconductor memories
US6107820A (en) * 1997-05-23 2000-08-22 Altera Corporation Redundancy circuitry for programmable logic devices with interleaved input circuits
US6055611A (en) * 1997-07-09 2000-04-25 Micron Technology, Inc. Method and apparatus for enabling redundant memory
US5999463A (en) * 1997-07-21 1999-12-07 Samsung Electronics Co., Ltd. Redundancy fuse box and semiconductor device including column redundancy fuse box shared by a plurality of memory blocks
US5896331A (en) * 1997-12-23 1999-04-20 Lsi Logic Corporation Reprogrammable addressing process for embedded DRAM
US5907511A (en) * 1997-12-23 1999-05-25 Lsi Logic Corporation Electrically selectable redundant components for an embedded DRAM
US5901095A (en) * 1997-12-23 1999-05-04 Lsi Logic Corporation Reprogrammable address selector for an embedded DRAM
US6011734A (en) * 1998-03-12 2000-01-04 Motorola, Inc. Fuseless memory repair system and method of operation
US5999440A (en) * 1998-03-30 1999-12-07 Lsi Logic Corporation Embedded DRAM with noise-protecting substrate isolation well
US6064588A (en) * 1998-03-30 2000-05-16 Lsi Logic Corporation Embedded dram with noise-protected differential capacitor memory cells
US6005824A (en) * 1998-06-30 1999-12-21 Lsi Logic Corporation Inherently compensated clocking circuit for dynamic random access memory
US5978304A (en) * 1998-06-30 1999-11-02 Lsi Logic Corporation Hierarchical, adaptable-configuration dynamic random access memory
US6181728B1 (en) 1998-07-02 2001-01-30 General Scanning, Inc. Controlling laser polarization
US6987786B2 (en) 1998-07-02 2006-01-17 Gsi Group Corporation Controlling laser polarization
US6201404B1 (en) 1998-07-14 2001-03-13 Altera Corporation Programmable logic device with redundant circuitry
US5953269A (en) * 1998-09-03 1999-09-14 Micron Technology, Inc. Method and apparatus for remapping addresses for redundancy
KR100304700B1 (ko) 1999-01-13 2001-09-26 윤종용 버퍼부를 내장하여 부하를 일정하게 하는 리던던시 회로
KR100370232B1 (ko) 1999-04-28 2003-01-29 삼성전자 주식회사 결함 셀을 리던던시 셀로의 대체를 반복 수행할 수 있는 리던던시 회로
US6101138A (en) * 1999-07-22 2000-08-08 Eton Technology, Inc. Area efficient global row redundancy scheme for DRAM
KR100363089B1 (ko) * 1999-09-07 2002-11-30 삼성전자 주식회사 리던던시 효율을 향상시키는 리던던시 회로를 포함하는반도체 메모리 장치
KR100363085B1 (ko) 1999-11-05 2002-12-05 삼성전자 주식회사 리던던시 효율을 향상시키는 로우 리던던시 스킴을 갖는반도체장치
KR100337476B1 (ko) 2000-03-17 2002-05-23 윤종용 반도체 메모리 장치 및 이 장치의 리던던시 회로 및 방법
KR100351902B1 (ko) * 2000-09-28 2002-09-12 주식회사 하이닉스반도체 칼럼 리던던시 리페어 회로
TW546664B (en) * 2001-01-17 2003-08-11 Toshiba Corp Semiconductor storage device formed to optimize test technique and redundancy technology
US6400619B1 (en) 2001-04-25 2002-06-04 International Business Machines Corporation Micro-cell redundancy scheme for high performance eDRAM
KR100408714B1 (ko) * 2001-06-28 2003-12-11 주식회사 하이닉스반도체 반도체 메모리 장치의 컬럼 리페어회로 및 방법
DE10152086B4 (de) * 2001-10-23 2007-03-22 Infineon Technologies Ag Verfahren zum Testen einer Mehrzahl von Bauelementen auf einem Wafer mit einer gemeinsamen Datenleitung und einer gemeinsamen Versorgungsleitung
US6801471B2 (en) * 2002-02-19 2004-10-05 Infineon Technologies Ag Fuse concept and method of operation
US7093156B1 (en) * 2002-05-13 2006-08-15 Virage Logic Corp. Embedded test and repair scheme and interface for compiling a memory assembly with redundancy implementation
US7159141B2 (en) * 2002-07-01 2007-01-02 Micron Technology, Inc. Repairable block redundancy scheme
KR100542696B1 (ko) * 2003-11-13 2006-01-11 주식회사 하이닉스반도체 반도체 장치의 리페어 퓨즈 박스
US8072834B2 (en) 2005-08-25 2011-12-06 Cypress Semiconductor Corporation Line driver circuit and method with standby mode of operation
KR100827659B1 (ko) * 2006-09-20 2008-05-07 삼성전자주식회사 반도체 메모리 장치
JP2009087513A (ja) * 2007-10-03 2009-04-23 Nec Electronics Corp 半導体記憶装置、及びメモリセルテスト方法
US8976604B2 (en) 2012-02-13 2015-03-10 Macronix International Co., Lt. Method and apparatus for copying data with a memory array having redundant memory
US9165680B2 (en) 2013-03-11 2015-10-20 Macronix International Co., Ltd. Memory integrated circuit with a page register/status memory capable of storing only a subset of row blocks of main column blocks
KR20150123378A (ko) * 2014-04-24 2015-11-04 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 동작 방법
US9773571B2 (en) 2014-12-16 2017-09-26 Macronix International Co., Ltd. Memory repair redundancy with array cache redundancy
US20160218286A1 (en) 2015-01-23 2016-07-28 Macronix International Co., Ltd. Capped contact structure with variable adhesion layer thickness
US9514815B1 (en) 2015-05-13 2016-12-06 Macronix International Co., Ltd. Verify scheme for ReRAM
US9691478B1 (en) 2016-04-22 2017-06-27 Macronix International Co., Ltd. ReRAM array configuration for bipolar operation
KR102597291B1 (ko) * 2016-11-07 2023-11-06 에스케이하이닉스 주식회사 리페어 제어 장치 및 이를 포함하는 반도체 장치
US9959928B1 (en) 2016-12-13 2018-05-01 Macronix International Co., Ltd. Iterative method and apparatus to program a programmable resistance memory element using stabilizing pulses

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2154032B (en) * 1984-02-08 1988-04-20 Inmos Ltd A repairable memory array
US4758993A (en) * 1984-11-19 1988-07-19 Fujitsu Limited Random access memory device formed on a semiconductor substrate having an array of memory cells divided into sub-arrays
US4827747A (en) * 1986-05-21 1989-05-09 Hitachi, Ltd. Method for producing a bellows with oval cross section and apparatus for carrying out the method
KR890003691B1 (ko) * 1986-08-22 1989-09-30 삼성전자 주식회사 블럭 열 리던던씨 회로
US5193076A (en) * 1988-12-22 1993-03-09 Texas Instruments Incorporated Control of sense amplifier latch timing
NL8900026A (nl) * 1989-01-06 1990-08-01 Philips Nv Matrixgeheugen, bevattende standaardblokken, standaardsubblokken, een redundant blok, en redundante subblokken, alsmede geintegreerde schakeling bevattende meerdere van zulke matrixgeheugens.
KR910005601B1 (ko) * 1989-05-24 1991-07-31 삼성전자주식회사 리던던트 블럭을 가지는 반도체 메모리장치
KR920010347B1 (ko) * 1989-12-30 1992-11-27 삼성전자주식회사 분할된 워드라인을 가지는 메모리장치의 리던던시 구조
KR930001793B1 (en) * 1989-12-30 1993-03-13 Korea Telecommunication Main-c.p.u. watching apparatus
DE69128173T2 (de) * 1990-07-31 1998-05-14 Texas Instruments Inc Redundante Halbleiterspeicheranordnung
US5210723A (en) * 1990-10-31 1993-05-11 International Business Machines Corporation Memory with page mode
US5159572A (en) * 1990-12-24 1992-10-27 Motorola, Inc. DRAM architecture having distributed address decoding and timing control
KR930003164A (ko) * 1991-07-26 1993-02-24 김광호 반도체메모리 리던던시 장치
US5257229A (en) * 1992-01-31 1993-10-26 Sgs-Thomson Microelectronics, Inc. Column redundancy architecture for a read/write memory

Also Published As

Publication number Publication date
DE4236099A1 (de) 1993-11-11
ITMI922474A0 (it) 1992-10-28
JPH0660690A (ja) 1994-03-04
GB2266795B (en) 1996-06-05
DE4236099C2 (de) 2001-01-11
FR2691000A1 (fr) 1993-11-12
GB9222905D0 (en) 1992-12-16
ITMI922474A1 (it) 1994-04-28
KR930024021A (ko) 1993-12-21
KR950000275B1 (ko) 1995-01-12
IT1255933B (it) 1995-11-17
US5325334A (en) 1994-06-28
GB2266795A (en) 1993-11-10
JP2555252B2 (ja) 1996-11-20
FR2691000B1 (fr) 1996-05-24

Similar Documents

Publication Publication Date Title
TW296838U (en) Column redundancy circuit for a semiconductor memory device
GB2307570B (en) Column redundancy circuits for semiconductor memory devices
GB9217743D0 (en) A semiconductor memory device
KR970005694B1 (en) Semiconductor memory device
EP0509811A3 (en) Semiconductor memory device
KR950008480B1 (en) Semiconductor memory device
EP0459521A3 (en) Semiconductor memory device with a redundancy circuit
EP0172016A3 (en) Semiconductor memory device having a redundancy circuit
GB9304655D0 (en) Semiconductor memory device
KR100251036B1 (en) Semiconductor memory device
GB2258329B (en) Semiconductor memory device having a sense amplifier control circuit
KR920008246B1 (en) A semiconductor memory circuit
KR960001785B1 (en) Semiconductor memory device
EP0499460A3 (en) Semiconductor memory device
GB2308705B (en) Row/column decoder circuits for a semiconductor memory device
EP0202910A3 (en) Decoder circuit for a semiconductor memory device
EP0577106A3 (en) Semiconductor memory circuit
GB9118641D0 (en) Word line driver stages for semiconductor memory devices
EP0583163A3 (en) Semiconductor memory device
GB9121767D0 (en) Semiconductor memory device
EP0503524A3 (en) Semiconductor memory device
GB2253092B (en) Semiconductor memory device
GB2258931B (en) A semiconductor memory device
GB2225485B (en) A semiconductor memory device
EP0595195A3 (en) Chip selection acceleration circuit for memory.