TW202345312A - 一種液體迴圈冷卻封裝基板及其製作方法 - Google Patents
一種液體迴圈冷卻封裝基板及其製作方法 Download PDFInfo
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- TW202345312A TW202345312A TW112115837A TW112115837A TW202345312A TW 202345312 A TW202345312 A TW 202345312A TW 112115837 A TW112115837 A TW 112115837A TW 112115837 A TW112115837 A TW 112115837A TW 202345312 A TW202345312 A TW 202345312A
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- layer
- heat dissipation
- cooling
- support frame
- dielectric layer
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Abstract
本申請公開了一種液體迴圈冷卻封裝基板及其製作方法,其中所述基板包括迴圈冷卻結構,包括形成在所述第一介電層內暴露出所述散熱面的冷卻腔、形成在所述冷卻腔內表面上的金屬散熱層、形成在所述金屬散熱層上的直立支撐柱、以及支撐在所述支撐柱上沿所述冷卻腔的周邊封閉所述冷卻腔的冷卻蓋,其中所述金屬散熱層完全覆蓋所述散熱面和所述冷卻腔的內側表面,所述冷卻蓋上形成有進液口和出液口。在第一介電層內設置迴圈冷卻結構,該迴圈冷卻結構在嵌埋封裝基板加工過程中形成,加工流程簡單、成本低;迴圈冷卻結構與器件的散熱面連接,既可以提升散熱性能,又可以合理利用基板內的空間,降低基板的整體厚度。
Description
本申請涉及半導體封裝技術領域,尤其涉及一種液體迴圈冷卻封裝基板及其製作方法。
隨著電子技術的發展與進步,電子產品朝著短小輕薄的方向演進,而電子產品的功能要求越來越強大,這就促進了電子產品的封裝結構朝著高度集成化、小型化的方向發展,晶片等元器件嵌埋封裝應運而生;與此同時電子元件的應用也朝著高頻高速高功率的方向發展,導致單位面積的熱流密度迅速遞增。眾所周知,隨著運行工作環境溫度的上升,電子元件的運行的速度隨之降低,損耗隨之上升,同時,長時間在高溫環境下運行,電子產品的可靠性相對降低。所以,如果不能及時將高頻高速高功率電子元件產生的熱量散發,電子產品的性能和可靠性會受到一定程度的影響。因此,在高頻高速高功率的大趨勢下,如何合理優化嵌埋封裝基板、封裝體的設計,提升嵌埋封裝結構的散熱性能,是當前一個重要的課題。
當前常用的兩種嵌埋封裝基板方式為:(1)將晶片等元器件貼裝於預設空腔的聚合物框架或者芯材,再使用塑封材料封裝。但是這種方式存在如下缺點:隨著高頻高速高功率產品的興起,嵌入式封裝產品有極高的散熱需求,即使散熱性再好的有機聚合物材料,散熱特性都存在局限性,無法從根本上解決高頻高速高功率嵌埋產品的散熱問題;(2)使用
金屬框架來嵌埋元器件,在金屬(例如銅)板上預先加工空腔,將晶片等元器件貼裝於預置空腔,再通過壓合介質材料進行封裝。這種嵌埋封裝方式利用金屬相對良好的散熱性能,代替有機聚合物材料框架,提升嵌埋封裝結構的散熱性能。但是,將晶片等元器件貼裝於金屬框架,再使用塑封材料封裝的方案存在如下劣勢:加工流程複雜,成本高,且金屬框架被介電材料包覆導致散熱速度依然較慢。
有鑒於此,本申請的目的在於提出一種液體迴圈冷卻封裝基板及其製作方法,以解決上述問題。
基於上述目的,本申請第一方面提供了一種液體迴圈冷卻封裝基板,包括:
嵌入在被支撐框架包圍的至少一個貫通空腔內的具有有源面和散熱面的器件,所述支撐框架包括沿高度方向貫穿所述支撐框架的導通柱;
在所述支撐框架的第一表面上的第一介電層和在所述支撐框架的第二表面上的第二介電層,其中第一介電層完全填充所述器件與所述支撐框架之間的間隙;
迴圈冷卻結構,包括形成在所述第一介電層內暴露出所述散熱面的冷卻腔、形成在所述冷卻腔內表面上的金屬散熱層、形成在所述金屬散熱層上的直立支撐柱、以及支撐在所述支撐柱上沿所述冷卻腔的周邊封閉所述冷卻腔的冷卻蓋,其中所述金屬散熱層完全覆蓋所述散熱面和所述冷卻腔的內側表面,所述冷卻蓋上形成有進液口和出液口;
形成在所述第一介電層上的第一線路層和形成在第二介電層上的第二線路層,其中所述第二線路層電連接所述器件的有源面上的端子,所述第一線路層和所述第二線路層通過所述導通柱電連接。
在一些實施例中,所述冷卻蓋通過焊料或耐腐蝕膠連接所述支撐柱和所述金屬散熱層的外周,從而封閉所述冷卻腔。
在一些實施例中,所述進液口和所述出液口設置在所述支撐柱的兩側。
在一些實施例中,所述金屬散熱層包括銅層。
在一些實施例中,還包括設置在所述第一線路層和所述第二線路層的外表面上的阻焊層。
基於同一發明構思,本申請第二方面提供了一種液體迴圈冷卻封裝基板的製作方法,包括:
(a)預製支撐框架,所述支撐框架包括沿高度方向貫穿所述支撐框架的導通柱以及被所述支撐框架包圍的至少一個貫通空腔;
(b)在所述貫通空腔中安裝具有有源面和散熱面的器件,在所述支撐框架的第一表面上施加第一介電層,使得所述第一介電層完全填充所述器件與所述支撐框架之間的間隙;
(c)在所述第一介電層上開孔形成第一圖案,所述第一圖案包括暴露出器件的散熱面的冷卻腔,填充所述第一圖案形成第一線路層和所述散熱面上的金屬散熱層,其中所述金屬散熱層完全覆蓋所述散熱面和所述冷卻腔的內側表面;
(d)在所述支撐框架的第二表面上施加第二介電層,在所
述第二介電層上開孔形成第二圖案,所述第二圖案暴露出所述器件的有源面上的端子,填充所述第二圖案形成第二電路層,其中所述第一線路層和所述第二線路層通過所述導通柱電連接;
(e)在所述器件的散熱面上的所述金屬散熱層上形成支撐柱,在所述支撐柱上施加冷卻蓋,所述冷卻蓋沿所述冷卻腔的周邊封閉所述冷卻腔,其中所述冷卻蓋上形成有進液口和出液口。
在一些實施例中,所述步驟(b)包括:
(b1)在所述支撐框架的第二表面上施加臨時載體;
(b2)將所述器件置於所述貫通空腔內,使得所述器件的有源面貼附在所述臨時載體上;
(b3)在所述支撐框架的第一表面上形成所述第一介電層;
(b4)移除所述臨時載體。
在一些實施例中,所述步驟(c)包括:
(c1)在所述第一介電層上形成第一金屬種子層;
(c2)在所述第一金屬種子層上施加第一光阻層,曝光顯影形成所述第一圖案;
(c3)在所述第一圖案中電鍍形成所述第一線路層和所述散熱面上的金屬散熱層;
(c4)移除所述第一光阻層和所述第一金屬種子層。
在一些實施例中,所述步驟(c)中,所述金屬散熱層包括銅層。
在一些實施例中,所述步驟(d)包括:
(d1)在所述第二介電層上形成第二金屬種子層;
(d2)在所述第二金屬種子層上施加第二光阻層,曝光顯影形成所述第二圖案;
(d3)在所述第二圖案中電鍍形成所述第二線路層;
(d4)移除所述第二光阻層和所述第二金屬種子層。
在一些實施例中,所述步驟(e)包括:
(e1)在所述冷卻腔內填充介電材料形成第三介電層;
(e2)對所述第三介電層鐳射開窗,形成暴露出所述金屬散熱層的第三圖案;
(e3)電鍍填充所述第三圖案形成所述支撐柱;
(e4)移除所述第三介電層。
在一些實施例中,所述步驟(e)還包括:
(e1’)在所述冷卻腔中填充光阻材料形成第三光阻層;
(e2’)對所述第三光阻層進行曝光顯影,形成暴露出所述金屬散熱層的第三圖案;
(e3’)電鍍填充所述第三圖案形成所述支撐柱;
(e4’)移除所述第三光阻層。
在一些實施例中,所述步驟(e)中,所述冷卻蓋通過焊料或耐腐蝕膠連接所述支撐柱和所述金屬散熱層的外周,從而封閉所述冷卻腔。
在一些實施例中,還包括:
(f)在步驟(e)之後,分別在所述第一線路層和所述第二
線路層上施加阻焊材料,形成阻焊層。
從上面所述可以看出,本申請提供的液體迴圈冷卻封裝基板及其製作方法,在第一介電層內於器件散熱面上直接設置迴圈冷卻結構,該迴圈冷卻結構在嵌埋封裝基板加工過程中形成,加工流程簡單、成本低;迴圈冷卻結構可以與外部液體冷卻系統連接,使得外部冷卻液可以從進液口進入迴圈冷卻結構,流經冷卻腔後,最終從迴圈冷卻結構的出液口流出,冷卻液可以快速帶走器件運行時產生的熱量,大大提升嵌埋封裝結構的散熱性能。另外,迴圈冷卻結構與器件的散熱面連接,既可以提升散熱性能,又可以合理利用基板內的空間,降低基板的整體厚度。迴圈冷卻結構中設置的支撐柱還能夠使得進入迴圈冷卻結構的冷卻液發生擾動形成湍流,進一步提高器件的散熱效率。
1:支撐框架
11:導通柱
12:貫通空腔
2:器件
21:有源面
22:散熱面
3:迴圈冷卻結構
31:金屬散熱層
32:冷卻腔
33:支撐柱
34:冷卻蓋
341:進液口
342:出液口
4:第一介電層
5:第二介電層
6:第一線路層
7:第二線路層
8:阻焊層
9:臨時載體
為了更清楚地說明本申請或相關技術中的技術方案,下麵將對實施例或相關技術描述中所需要使用的附圖作簡單地介紹,顯而易見地,下麵描述中的附圖僅僅是本申請的實施例,對於本領域普通技術人員來講,在不付出創造性勞動的前提下,還可以根據這些附圖獲得其他的附圖。
圖1為根據本發明的一個實施例的液體迴圈冷卻封裝基板的截面示意圖;
圖2為根據本發明的一個實施例的迴圈冷卻結構的截面示意圖;
圖3至12為本發明一個實施例的液體迴圈冷卻封裝基板的製
作方法的各步驟中間結構的截面示意圖。
為使本申請的目的、技術方案和優點更加清楚明白,以下結合具體實施例,並參照附圖,對本申請進一步詳細說明。
需要說明的是,除非另外定義,本申請實施例使用的技術術語或者科學術語應當為本申請所屬領域內具有一般技能的人士所理解的通常意義。本申請實施例中使用的“第一”、“第二”以及類似的詞語並不表示任何順序、數量或者重要性,而只是用來區分不同的組成部分。“包括”或者“包含”等類似的詞語意指出現該詞前面的元件或者物件涵蓋出現在該詞後面列舉的元件或者物件及其等同,而不排除其他元件或者物件。“連接”或者“相連”等類似的詞語並非限定於物理的或者機械的連接,而是可以包括電性的連接,不管是直接的還是間接的。“上”、“下”、“左”、“右”等僅用於表示相對位置關係,當被描述對象的絕對位置改變後,則該相對位置關係也可能相應地改變。
參考圖1,本申請提供了一種液體迴圈冷卻封裝基板,包括:
嵌入在被支撐框架1包圍的至少一個貫通空腔12內的具有有源面21和散熱面22的器件2,所述支撐框架1包括沿高度方向貫穿所述支撐框架1的導通柱11;
在所述支撐框架1的第一表面上的第一介電層4和在所述支撐框架1的第二表面上的第二介電層5,其中第一介電層4完全填充所述器件2與所述支撐框架1之間的間隙;
迴圈冷卻結構3,包括形成在所述第一介電層4內暴露出所述
散熱面22的冷卻腔32、形成在所述冷卻腔32內表面上的金屬散熱層31、形成在所述金屬散熱層31上的直立支撐柱33、以及支撐在所述支撐柱33上沿所述冷卻腔32的周邊封閉所述冷卻腔32的冷卻蓋34,其中所述金屬散熱層31完全覆蓋所述散熱面22和所述冷卻腔32的內側表面,所述冷卻蓋34上形成有進液口341和出液口342;
形成在所述第一介電層4上的第一線路層6和形成在第二介電層5上的第二線路層7,其中所述第二線路層7電連接所述器件2的有源面21上的端子,所述第一線路層6和所述第二線路層7通過所述導通柱11電連接。
具體地,所述支撐框架1可採用聚合物材料製成,所述聚合物材料可以是聚醯亞胺、環氧樹脂、雙馬來醯亞胺、三嗪樹脂、玻璃纖維增強樹脂或它們的組合。值得理解的是,所述貫通空腔12的數量可以為一個或多個,為了便於敘述,本實施例以一個貫通空腔12為例進行說明。所述導通柱11可以包括至少一個導通銅柱作為IO通道,其截面尺寸可以相同,也可以不同;導通柱11的形狀可以根據實際需要設定,例如,可以為方形、圓形等,具體不做限定。
所述器件2可以是裸晶片,如積體電路的驅動晶片(IC driver)、場效應管(FET)等、也可以是無源器件2,如電容、電阻或電感等,還可以是經初步封裝後的單封裝體,例如球柵陣列(BGA)/柵格陣列(LGA)等,或者是其中多種器件2的組合;器件2可以是單面具有端子的器件2,也可以是兩面上均具有端子的器件2。本實施例中,以器件2為具有單面端子的晶片為例進行說明,但是並不限定只能對具有單面端子的晶片進行後續
操作。
所述第一介電層4和所述第二介電層5可以選自環氧樹脂、酚醛樹脂、苯並環丁烯樹脂、聚酯亞胺樹脂、ABF等中的至少一種材料製成。
所述迴圈冷卻結構3位於所述第一介電層4內,且與器件2的散熱面22連接,既可以提升散熱性能,又可以合理利用基板內的空間,降低基板的整體厚度。所述金屬散熱層31可以保護器件2不受濕氣影響,又可以利用自身的金屬材質進行輔助散熱,提高基板的散熱性能。其中,所述金屬散熱層31包括銅層,利用金屬銅良好的導熱性能,進一步提高基板的散熱性能。
所述支撐柱33位於所述散熱面22對應的金屬散熱層31上,所述支撐柱33的一端與所述冷卻蓋34連接,另一端與所述器件2的散熱面22連接。所述支撐柱33可以包括至少一個導通銅柱作為IO通道。
參考圖2,所述冷卻蓋34通過焊料或耐腐蝕膠連接所述支撐柱33和所述金屬散熱層31的外周,從而封閉所述冷卻腔32。所述冷卻蓋34上形成有進液口341和出液口342,所述進液口341和所述出液口342設置在所述支撐柱33的兩側。所述進液口341用於與外部進液系統連接,所述出液口342用於與外部出液系統連接,如此使得所述迴圈冷卻結構3可以與外部進液系統和外部出液系統連接,使得外部冷卻液可以從進液口341進入迴圈冷卻結構3,流經冷卻腔32後,最終從迴圈冷卻結構3的出液口342流出,冷卻液可以快速帶走器件2運行時產生的熱量,大大提升嵌埋封裝結構的散熱性能。另外,迴圈冷卻結構3與器件2的散熱面22連接,既可以提升散熱性能,又可以合理利用基板內的空間,降低基板的整體厚度。
在一些實施例中,所述基板還包括設置在所述第一線路層6和所述第二線路層7的外表面上的阻焊層8。所述阻焊層8可選為使用阻焊材料製成,可以通過塗布、貼膜或印刷的方式施加阻焊材料,曝光顯影形成阻焊層8;可以通過化金、化銀、鍍金或鍍錫的方式對暴露的金屬進行表面處理。
基於同一發明構思,本申請第二方面提供了一種液體迴圈冷卻封裝基板的製作方法,具體包括如下步驟。
步驟(a),參考圖3,預製支撐框架1,所述支撐框架1包括沿高度方向貫穿所述支撐框架1的導通柱11以及被所述支撐框架1包圍的至少一個貫通空腔12。
具體地,所述貫通空腔12的數量可以為一個或多個,為了便於敘述,本實施例以一個貫通空腔12為例進行說明。所述導通柱11可以包括至少一個導通銅柱作為IO通道,其截面尺寸可以相同,也可以不同;導通柱11的形狀可以根據實際需要設定,例如,可以為方形、圓形等,具體不做限定。
步驟(b),參考圖4,在所述貫通空腔12中安裝具有有源面21和散熱面22的器件2,在所述支撐框架1的第一表面上施加第一介電層4,使得所述第一介電層4完全填充所述器件2與所述支撐框架1之間的間隙。
具體地,所述步驟(b)具體包括如下步驟:
步驟(b1),參考圖4,在所述支撐框架1的第二表面上施加臨時載體9。所述臨時載體9可以為膠帶、膠紙或膠布等,所述臨時載體9達到在貫通空腔12的底部提供臨時承載面的目的。
步驟(b2),將所述器件2置於所述貫通空腔12內,使得所述器件2的有源面21貼附在所述臨時載體9上。將所述器件2粘貼在所述臨時載體9上,所述臨時載體9可以為所述器件2提供穩定的支撐作用。
步驟(b3),參考圖5,在所述支撐框架1的第一表面上形成所述第一介電層4。第一介電層4完全填充所述器件2與所述支撐框架1之間的間隙。
步驟(b4),參考圖6,移除所述臨時載體9。
具體地,移除所述臨時載體9,方便後續在所述支撐框架1的第二表面上施加第二介電層5。
步驟(c),參考圖8、圖9,在所述第一介電層4上開孔形成第一圖案,所述第一圖案包括暴露出器件2的散熱面22的冷卻腔32,填充所述第一圖案形成第一線路層6和所述散熱面22上的金屬散熱層31,其中所述金屬散熱層31完全覆蓋所述散熱面22和所述冷卻腔32的內側表面。
具體地,所述步驟(c)具體包括如下步驟:
步驟(c1),在所述第一介電層4上形成第一金屬種子層。通常,可以通過化學鍍或者濺射的方式在所述第一介電層4上形成第一金屬種子層,第一金屬種子層可以包括鈦、銅、鈦鎢合金或它們的組合。優選地,濺射鈦和銅製作第一金屬種子層。
步驟(c2),在所述第一金屬種子層上施加第一光阻層,曝光顯影形成所述第一圖案。通常,可以通過貼膜或塗覆的方式在第一金屬種子層上施加第一光阻層;第一光阻層的厚度可以根據需要調節。
步驟(c3),在所述第一圖案中電鍍形成所述第一線路層6
和所述散熱面22上的金屬散熱層31。所述第一線路層6和所述散熱面22上的金屬散熱層31的厚度可以根據實際需求設置,通常其厚度不高於第一光阻層的厚度。其中,所述金屬散熱層31包括銅層,用於提升基板的散熱性能。
步驟(c4),移除所述第一光阻層和所述第一金屬種子層。通常,可以通過退膜的方式移除第一光阻層並蝕刻移除第一金屬種子層。
步驟(d),參考圖7、圖8,在所述支撐框架1的第二表面上施加第二介電層5,在所述第二介電層5上開孔形成第二圖案,所述第二圖案暴露出所述器件2的有源面21上的端子,填充所述第二圖案形成第二電路層,其中所述第一線路層6和所述第二線路層7通過所述導通柱11電連接。
具體地,所述步驟(d)具體包括如下步驟:
步驟(d1),在所述第二介電層5上形成第二金屬種子層。通常,可以通過化學鍍或者濺射的方式在所述第二介電層5上形成第二金屬種子層,第二金屬種子層可以包括鈦、銅、鈦鎢合金或它們的組合。優選地,濺射鈦和銅製作第二金屬種子層。
步驟(d2),在所述第二金屬種子層上施加第二光阻層,曝光顯影形成所述第二圖案。通常,可以通過貼膜或塗覆的方式在第二金屬種子層上施加第二光阻層;第二光阻層的厚度可以根據需要調節。
步驟(d3),在所述第二圖案中電鍍形成所述第二線路層7。所述第二線路層7的厚度可以根據實際需求設置,通常其厚度不高於第二光阻層的厚度。
步驟(d4),移除所述第二光阻層和所述第二金屬種子層。通常,可以通過退膜的方式移除第一光阻層並蝕刻移除第一金屬種子層。
步驟(e),參考圖10、圖11和圖12,在所述器件2的散熱面22上的所述金屬散熱層31上形成支撐柱33,在所述支撐柱33上施加冷卻蓋34,所述冷卻蓋34沿所述冷卻腔32的周邊封閉所述冷卻腔32,其中所述冷卻蓋34上形成有進液口341和出液口342。
其中,所述冷卻蓋34通過焊料或耐腐蝕膠連接所述支撐柱33和所述金屬散熱層31的外周,從而封閉所述冷卻腔32。所述冷卻蓋34上形成有進液口341和出液口342,所述進液口341和所述出液口342設置在所述支撐柱33的兩側。所述進液口341用於與外部進液系統連接,所述出液口342用於與外部出液系統連接,如此使得所述迴圈冷卻結構3可以與外部進液系統和外部出液系統連接,使得外部冷卻液可以從進液口341進入迴圈冷卻結構3,流經冷卻腔32後,最終從迴圈冷卻結構3的出液口342流出,冷卻液可以快速帶走器件2運行時產生的熱量,大大提升嵌埋封裝結構的散熱性能。另外,迴圈冷卻結構3與器件2的散熱面22連接,既可以提升散熱性能,又可以合理利用基板內的空間,降低基板的整體厚度。
具體地,所述步驟(e)可以包括以下兩種具體實施方法。
實施方法一:所述步驟(e)具體包括如下步驟:
步驟(e1)在所述冷卻腔32內填充介電材料形成第三介電層。所述介電材料可選為FR4材料。
步驟(e2)對所述第三介電層鐳射開窗,形成暴露出所述金屬散熱層31的第三圖案。通常,通過鐳射、鑽孔或等離子蝕刻的方式局部減薄所述第三介電層,以形成暴露出所述金屬散熱層31的第三圖案。具體實施時,可以通過磨板或等離子蝕刻的方式整體減薄所述第三介電層,還
可以通過鐳射或鑽孔的方式局部減薄所述第三介電層。
步驟(e3)電鍍填充所述第三圖案形成所述支撐柱33;
步驟(e4)移除所述第三介電層。
實施方法二:所述步驟(e)具體包括如下步驟:
步驟(e1’)在所述冷卻腔32中填充光阻材料形成第三光阻層。本步驟中,可以使用光阻材料作為填充材料,與介電材料起到相同的作用。
步驟(e2’)對所述第三光阻層進行曝光顯影,形成暴露出所述金屬散熱層31的第三圖案;
步驟(e2’)對所述第三光阻層進行曝光顯影,形成暴露出所述金屬散熱層31的第三圖案;
步驟(e3’)電鍍填充所述第三圖案形成所述支撐柱33;
步驟(e4’)移除所述第三光阻層。
上述各個步驟的具體實施方式參照上文,在此不做贅述。
在一些實施例中,所述液體迴圈冷卻封裝基板的製作方法在步驟(e)之後,還包括步驟(f):分別在所述第一線路層6和所述第二線路層7上施加阻焊材料,形成阻焊層8。
具體地,可以通過塗布、貼膜或印刷的方式施加阻焊材料,曝光顯影形成阻焊層8。還可以可以通過化金、化銀、鍍金或鍍錫的方式對暴露的金屬進行表面處理。
綜上,本申請提供的液體迴圈冷卻封裝基板的製作方法,在第一介電層內設置迴圈冷卻結構3,該迴圈冷卻結構3在嵌埋封裝基板加
工過程中形成,加工流程簡單、成本低。迴圈冷卻結構3可以與外部進液系統和外部出液系統連接,使得外部冷卻液可以從進液口341進入迴圈冷卻結構3,流經冷卻腔32後,最終從迴圈冷卻結構3的出液口342流出,冷卻液可以快速帶走器件2運行時產生的熱量,大大提升嵌埋封裝結構的散熱性能。另外,迴圈冷卻結構3與器件2的散熱面22連接,既可以提升散熱性能,又可以合理利用基板內的空間,降低基板的整體厚度。同時,金屬散熱層31本身就可以輔助散熱,加上迴圈冷卻液體的傳導散熱,冷卻液體可以快速帶走器件2運行時產生的熱量,大大提升嵌埋封裝基板的散熱性能。
值得注意的是,在本發明實施例的描述中,對方法步驟的連續標號是為了方便審查和理解,結合本發明的整體技術方案以及各個步驟之間的邏輯關係,調整步驟之間的實施順序並不會影響本發明技術方案所達到的技術效果。本實施例涉及的一些製作步驟,例如種子層加工、圖形轉移以及圖形電鍍等步驟在此沒有詳細表述,是因為這些步驟中的材料和工藝流程均為本領域的公知常識。可以很確切地說,當為某一特定產品設計相應的步驟時,本領域技術人員能夠對基於例如生產批量、基板複雜程度和元器件解析度等參數的清楚認識從各種可替換的材料和製作流程中作出合適的選擇。
需要說明的是,上述對本公開的一些實施例進行了描述。其他實施例在所附請求項的範圍內。在一些情況下,在請求項中記載的動作或步驟可以按照不同於上述實施例中的順序來執行並且仍然可以實現期望的結果。另外,在附圖中描繪的過程不一定要求示出的特定順序或者連續順序才能實現期望的結果。在某些實施方式中,多任務處理和並行處理
也是可以的或者可能是有利的。
所屬領域的普通技術人員應當理解:以上任何實施例的討論僅為示例性的,並非旨在暗示本公開的範圍(包括請求項)被限於這些例子;在本公開的思路下,以上實施例或者不同實施例中的技術特徵之間也可以進行組合,步驟可以以任意順序實現,並存在如上所述的本公開實施例的不同方面的許多其他變化,為了簡明它們沒有在細節中提供。
本公開實施例旨在涵蓋落入所附請求項的寬泛範圍之內的所有這樣的替換、修改和變型。因此,凡在本公開實施例的精神和原則之內,所做的任何省略、修改、等同替換、改進等,均應包含在本公開的保護範圍之內。
1:支撐框架
11:導通柱
12:貫通空腔
2:器件
21:有源面
22:散熱面
3:迴圈冷卻結構
31:金屬散熱層
32:冷卻腔
33:支撐柱
34:冷卻蓋
341:進液口
342:出液口
4:第一介電層
5:第二介電層
6:第一線路層
7:第二線路層
8:阻焊層
Claims (14)
- 一種液體迴圈冷卻封裝基板,其特徵在於,包括:嵌入在被支撐框架包圍的至少一個貫通空腔內的具有有源面和散熱面的器件,所述支撐框架包括沿高度方向貫穿所述支撐框架的導通柱;在所述支撐框架的第一表面上的第一介電層和在所述支撐框架的第二表面上的第二介電層,其中第一介電層完全填充所述器件與所述支撐框架之間的間隙;迴圈冷卻結構,包括形成在所述第一介電層內暴露出所述散熱面的冷卻腔、形成在所述冷卻腔內表面上的金屬散熱層、形成在所述金屬散熱層上的直立支撐柱、以及支撐在所述支撐柱上沿所述冷卻腔的周邊封閉所述冷卻腔的冷卻蓋,其中所述金屬散熱層完全覆蓋所述散熱面和所述冷卻腔的內側表面,所述冷卻蓋上形成有進液口和出液口;形成在所述第一介電層上的第一線路層和形成在第二介電層上的第二線路層,其中所述第二線路層電連接所述器件的有源面上的端子,所述第一線路層和所述第二線路層通過所述導通柱電連接。
- 根據請求項1所述的液體迴圈冷卻封裝基板,其特徵在於,所述冷卻蓋通過焊料或耐腐蝕膠連接所述支撐柱和所述金屬散熱層的外周,從而封閉所述冷卻腔。
- 根據請求項1所述的液體迴圈冷卻封裝基板,其特徵在於,所述進液口和所述出液口設置在所述支撐柱的兩側。
- 根據請求項1所述的液體迴圈冷卻封裝基板,其特徵在於,所述金屬散熱層包括銅層。
- 根據請求項1所述的液體迴圈冷卻封裝基板,其特徵在於,還包括設置在所述第一線路層和所述第二線路層的外表面上的阻焊層。
- 一種液體迴圈冷卻封裝基板的製作方法,其特徵在於,包括:(a)預製支撐框架,所述支撐框架包括沿高度方向貫穿所述支撐框架的導通柱以及被所述支撐框架包圍的至少一個貫通空腔;(b)在所述貫通空腔中安裝具有有源面和散熱面的器件,在所述支撐框架的第一表面上施加第一介電層,使得所述第一介電層完全填充所述器件與所述支撐框架之間的間隙;(c)在所述第一介電層上開孔形成第一圖案,所述第一圖案包括暴露出器件的散熱面的冷卻腔,填充所述第一圖案形成第一線路層和所述散熱面上的金屬散熱層,其中所述金屬散熱層完全覆蓋所述散熱面和所述冷卻腔的內側表面;(d)在所述支撐框架的第二表面上施加第二介電層,在所述第二介電層上開孔形成第二圖案,所述第二圖案暴露出所述器件的有源面上的端子,填充所述第二圖案形成第二電路層,其中所述第一線路層和所述第二線路層通過所述導通柱電連接;(e)在所述器件的散熱面上的所述金屬散熱層上形成支撐柱,在所述支撐柱上施加冷卻蓋,所述冷卻蓋沿所述冷卻腔的周邊封閉所述冷卻腔,其中所述冷卻蓋上形成有進液口和出液口。
- 根據請求項6所述的製作方法,其特徵在於,所述步驟(b)包括:(b1)在所述支撐框架的第二表面上施加臨時載體;(b2)將所述器件置於所述貫通空腔內,使得所述器件的有源面貼附在所述臨時載體上;(b3)在所述支撐框架的第一表面上形成所述第一介電層;(b4)移除所述臨時載體。
- 根據請求項7所述的製作方法,其特徵在於,所述步驟(c)包括:(c1)在所述第一介電層上形成第一金屬種子層;(c2)在所述第一金屬種子層上施加第一光阻層,曝光顯影形成所述第一圖案;(c3)在所述第一圖案中電鍍形成所述第一線路層和所述散熱面上的金屬散熱層;(c4)移除所述第一光阻層和所述第一金屬種子層。
- 根據請求項6所述的製作方法,其特徵在於,所述步驟(c)中,所述金屬散熱層包括銅層。
- 根據請求項6所述的製作方法,其特徵在於,所述步驟(d)包括:(d1)在所述第二介電層上形成第二金屬種子層;(d2)在所述第二金屬種子層上施加第二光阻層,曝光顯影形成所述第二圖案;(d3)在所述第二圖案中電鍍形成所述第二線路層;(d4)移除所述第二光阻層和所述第二金屬種子層。
- 根據請求項6所述的製作方法,其特徵在於,所述步驟(e)包括:(e1)在所述冷卻腔內填充介電材料形成第三介電層;(e2)對所述第三介電層鐳射開窗,形成暴露出所述金屬散熱層的第三圖案;(e3)電鍍填充所述第三圖案形成所述支撐柱;(e4)移除所述第三介電層。
- 根據請求項6所述的製作方法,其特徵在於,所述步驟(e)還包括:(e1’)在所述冷卻腔中填充光阻材料形成第三光阻層;(e2’)對所述第三光阻層進行曝光顯影,形成暴露出所述金屬散熱層的第三圖案;(e3’)電鍍填充所述第三圖案形成所述支撐柱;(e4’)移除所述第三光阻層。
- 根據請求項6所述的製作方法,其特徵在於,所述步驟(e)中,所述冷卻蓋通過焊料或耐腐蝕膠連接所述支撐柱和所述金屬散熱層的外周,從而封閉所述冷卻腔。
- 根據請求項6所述的製作方法,其特徵在於,還包括:(f)在步驟(e)之後,分別在所述第一線路層和所述第二線路層上施加阻焊材料,形成阻焊層。
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