TW202340854A - 罩幕 - Google Patents

罩幕 Download PDF

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Publication number
TW202340854A
TW202340854A TW112121544A TW112121544A TW202340854A TW 202340854 A TW202340854 A TW 202340854A TW 112121544 A TW112121544 A TW 112121544A TW 112121544 A TW112121544 A TW 112121544A TW 202340854 A TW202340854 A TW 202340854A
Authority
TW
Taiwan
Prior art keywords
mask
mask pattern
exposure
pattern
area
Prior art date
Application number
TW112121544A
Other languages
English (en)
Chinese (zh)
Inventor
加藤正紀
戸口学
Original Assignee
日商尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商尼康股份有限公司 filed Critical 日商尼康股份有限公司
Publication of TW202340854A publication Critical patent/TW202340854A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/703—Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Manufacturing Optical Record Carriers (AREA)
TW112121544A 2017-03-31 2018-03-30 罩幕 TW202340854A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-073024 2017-03-31
JP2017073024 2017-03-31

Publications (1)

Publication Number Publication Date
TW202340854A true TW202340854A (zh) 2023-10-16

Family

ID=63678035

Family Applications (2)

Application Number Title Priority Date Filing Date
TW107111251A TWI808078B (zh) 2017-03-31 2018-03-30 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體
TW112121544A TW202340854A (zh) 2017-03-31 2018-03-30 罩幕

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW107111251A TWI808078B (zh) 2017-03-31 2018-03-30 圖案計算裝置、圖案計算方法、罩幕、曝光裝置、元件製造方法和記錄媒體

Country Status (5)

Country Link
JP (3) JP6915680B2 (ja)
KR (3) KR102685228B1 (ja)
CN (1) CN110476121B (ja)
TW (2) TWI808078B (ja)
WO (1) WO2018181985A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020109440A (ja) * 2019-01-04 2020-07-16 株式会社Ｊｏｌｅｄ フォトマスクの製造方法、表示パネルの製造方法、および、フォトマスク

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318352A (ja) * 1986-07-11 1988-01-26 Agency Of Ind Science & Technol 分割露光用マスク
US5437946A (en) * 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system
JPH08297692A (ja) * 1994-09-16 1996-11-12 Mitsubishi Electric Corp 光近接補正装置及び方法並びにパタン形成方法
JP2001068398A (ja) * 1999-08-27 2001-03-16 Hitachi Ltd 半導体集積回路装置の製造方法およびマスクの製造方法
JP2003043667A (ja) * 2001-07-30 2003-02-13 Ricoh Opt Ind Co Ltd 濃度分布マスクの製造方法
KR101205262B1 (ko) * 2003-01-23 2012-11-27 가부시키가이샤 니콘 노광 장치
JP2004233861A (ja) * 2003-01-31 2004-08-19 Nikon Corp マスク、露光方法及びデバイス製造方法
JP4886169B2 (ja) * 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
JP2004294977A (ja) * 2003-03-28 2004-10-21 Nikon Corp パターン作成方法及びパターン作成システム、マスク製造方法及びマスク製造システム、マスク、露光方法及び露光装置、並びにデバイス製造方法
JP2004303951A (ja) * 2003-03-31 2004-10-28 Nikon Corp 露光装置及び露光方法
JP4514427B2 (ja) * 2003-10-03 2010-07-28 リコー光学株式会社 稠密構造物品の製造方法及びそこで用いる露光用マスク、並びにマイクロレンズアレイ
JP2005183600A (ja) * 2003-12-18 2005-07-07 Canon Inc 半導体装置、固体撮像装置、増幅型固体撮像装置、撮像システム、マスク装置、及び露光装置
JP2006171113A (ja) * 2004-12-13 2006-06-29 Toshiba Corp マスクデータ作成装置、マスクデータ作成方法、露光マスク、半導体装置の製造方法及びマスクデータ作成プログラム
US20070031764A1 (en) * 2005-08-03 2007-02-08 Meng-Chi Liou Exposure process
JP4961750B2 (ja) * 2006-01-16 2012-06-27 富士通セミコンダクター株式会社 半導体装置の製造方法及び露光方法
JP4984810B2 (ja) * 2006-02-16 2012-07-25 株式会社ニコン 露光方法、露光装置及びフォトマスク
KR20090026116A (ko) * 2006-06-09 2009-03-11 가부시키가이샤 니콘 패턴 형성 방법 및 패턴 형성 장치, 노광 방법 및 노광 장치 및 디바이스 제조 방법
JP2007049208A (ja) * 2006-11-21 2007-02-22 Nikon Corp 露光装置、露光方法及びデバイス製造方法
JP2008185908A (ja) * 2007-01-31 2008-08-14 Nikon Corp マスクの製造方法、露光方法、露光装置、および電子デバイスの製造方法
US20080299499A1 (en) * 2007-05-30 2008-12-04 Naomasa Shiraishi Exposure method, method of manufacturing plate for flat panel display, and exposure apparatus
JP5077656B2 (ja) * 2007-06-18 2012-11-21 株式会社ニコン パターンデータ処理方法及びシステム、並びに露光方法及び装置
JP2009170832A (ja) * 2008-01-21 2009-07-30 Seiko Epson Corp レイアウトパターンの演算方法、フォトマスク、半導体装置の製造方法、半導体装置、並びに電子機器
TW201100975A (en) 2009-04-21 2011-01-01 Nikon Corp Moving-object apparatus, exposure apparatus, exposure method, and device manufacturing method
JP2012054302A (ja) * 2010-08-31 2012-03-15 V Technology Co Ltd 露光方法及び露光装置
JP2013195583A (ja) * 2012-03-16 2013-09-30 Nikon Corp マスク、露光方法、露光装置およびデバイス製造方法
JP5677356B2 (ja) * 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
JP6136354B2 (ja) * 2013-02-22 2017-05-31 大日本印刷株式会社 露光マスク製造方法、露光マスクを用いた露光方法、露光マスクを製造するために用いられる基準マスク、および露光マスク

Also Published As

Publication number Publication date
KR102685228B1 (ko) 2024-07-15
TW201903515A (zh) 2019-01-16
JP6915680B2 (ja) 2021-08-04
TWI808078B (zh) 2023-07-11
KR20220000929A (ko) 2022-01-04
KR20190124799A (ko) 2019-11-05
WO2018181985A1 (ja) 2018-10-04
JP7215528B2 (ja) 2023-01-31
KR20230062883A (ko) 2023-05-09
JP2023052499A (ja) 2023-04-11
CN110476121B (zh) 2024-08-09
CN110476121A (zh) 2019-11-19
JP2021167972A (ja) 2021-10-21
JPWO2018181985A1 (ja) 2019-12-26
JP7494957B2 (ja) 2024-06-04
KR102345078B1 (ko) 2021-12-29

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