TW202043409A - 接合構造體 - Google Patents

接合構造體 Download PDF

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TW202043409A
TW202043409A TW109108984A TW109108984A TW202043409A TW 202043409 A TW202043409 A TW 202043409A TW 109108984 A TW109108984 A TW 109108984A TW 109108984 A TW109108984 A TW 109108984A TW 202043409 A TW202043409 A TW 202043409A
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particles
bonding material
joined
conductive bonding
sqrt
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石川史朗
山口朋彦
増山弘太郎
岩田広太郎
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日商三菱綜合材料股份有限公司
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Abstract

本發明之接合構造體，係具有電路圖樣的基板與具備電極端子的被接合構件透過導電性接合材而接合而成之接合構造體，其特徵為，當將前述電路圖樣與前述導電性接合材之接觸面積訂為X、前述電極端子與前述導電性接合材之接觸面積訂為Y、前述導電性接合材的熱傳導度訂為λ時，滿足下記式(1)。

Description

接合構造體
本發明有關接合構造體。 本申請專利基於2019年3月22日於日本申請之特願2019-055366號而主張優先權，並將其內容援用於此。
作為用來組裝LED晶片或功率模組等的電子零件之基板的一種，已知有金屬基底基板。金屬基底基板，為依金屬基板、絕緣層、電路層的順序層積而成之層積體。電路層，被成形為規定的電路圖樣，電子零件的電極端子在電路圖樣之上透過銲料等的導電性接合材而被接合(專利文獻1)。被做成如此構成的金屬基底基板中，在電子零件產生的熱會透過絕緣層傳遞至金屬基板，而從金屬基板被散熱至外部。
將具備電子零件等的電極端子之被接合構件與電路圖樣接合而成之接合構造體，較佳是能夠使在被接合構件產生的熱有效率地放出至外部，也就是散熱性高。為了提高接合構造體的散熱性，一直有人研討使導電性接合材的熱傳導度提升(專利文獻2～5)。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2014-103314號公報 [專利文獻2]日本特開2018-172792號公報 [專利文獻3]日本特開2018-168226號公報 [專利文獻4]日本特開2018-152176號公報 [專利文獻5]日本特開2016-204733號公報
[發明所欲解決之問題]
不過，隨著近年來的電子機器的高容量化或高輸出化，在接合構造體產生的熱量有增加的傾向。然而，若僅是使接合材的熱傳導度提升，要應對電子機器的進一步的高容量化或高輸出化仍有極限。
本發明有鑑於前述的事態而創作，其目的在於提供一種接合構造體，使將具備電子零件等的電極端子之被接合構件與電路圖樣予以接合而成之接合構造體的散熱性提升，也就是能夠使在被接合構件產生的熱有效率地放出至外部。 [解決問題之技術手段]
為解決上述的待解問題，本發明的一個態樣之接合構造體(以下稱「本發明之接合構造體」)，係具有電路圖樣的基板與具備電極端子的被接合構件透過導電性接合材而接合而成之接合構造體，其特徵為，當將前述電路圖樣與前述導電性接合材之接觸面積訂為X、前述電極端子與前述導電性接合材之接觸面積訂為Y、前述導電性接合材的熱傳導度訂為λ時，滿足下記式(1)。
Figure 02_image001
本發明之接合構造體中，電路圖樣與導電性接合材之接觸面積X及電極端子與導電性接合材之接觸面積Y、及導電性接合材的熱傳導度λ滿足上述式(1)的關係，故接合構造體的熱阻會減低。因此，能夠使在被接合構件產生的熱有效率地放出至外部。
此處，本發明之接合構造體中，前述被接合構件亦可為LED晶片、或功率模組。 在此情形下，LED晶片及功率模組，雖隨著近年來的電子機器的高機能化或小型化而發熱量增加，惟本發明之接合構造體散熱性高，因此被接合構件即使是LED晶片或功率模組仍顯現優良的散熱性，能夠抑制熱所造成的LED晶片及功率模組的劣化。
此外，本發明之接合構造體中，較佳是，前述導電性接合材為自銀粒子、銅粒子、被錫被覆的銅粒子所成之群中選擇的至少1種金屬粒子的燒結體。 在此情形下，導電性接合材具有高熱傳導性，故能夠更確實地使在被接合構件產生的熱有效率地放出至外部。此外，金屬粒子的燒結體，即使為高溫狀態仍不會熔融而帶有流動性，故能夠將被接合構件穩定地固定。 [發明之功效]
按照本發明，可提供一種接合構造體，能夠使在被接合構件產生的熱有效率地放出至外部。
以下參照所附圖面，說明本發明的實施形態之接合構造體。 圖1為本發明一實施形態之接合構造體的概略截面圖。
圖1中，接合構造體1，為金屬基底基板10、與被接合構件70接合而成之構造體。金屬基底基板10，為依金屬基板20、絕緣層30、電路圖樣40的順序層積而成之層積體。被接合構件70具備電極端子71。金屬基底基板10的電路圖樣40、與被接合構件70的電極端子71透過導電性接合材60而被接合。
接合構造體1被設計成，電路圖樣40與導電性接合材60之接觸面積X(單位：mm2 )、及電極端子71與導電性接合材60之接觸面積Y(單位：mm2 )、及導電性接合材60的熱傳導度λ(單位：W/mK)滿足下記式(1)。
Figure 02_image003
式(1)中，SQRT表示平方根。也就是說，SQRT(X)/SQRT(Y)，為相對於電極端子71與導電性接合材60之接觸面積Y的平方根之，電路圖樣40與導電性接合材60之接觸面積X的平方根的比。SQRT(X)/SQRT(Y)較佳為100以下。
接合構造體1，對於熱傳導度λ的導電性接合材60，以滿足上述式(1)之方式設定接觸面積X及接觸面積Y，藉此熱阻會減低，從電極端子71往電路圖樣40的熱的傳導性會提升，並且傳至電路圖樣40的熱變得容易在金屬基底基板10內擴散。
電極端子71與導電性接合材60之接觸面積Y，會因被接合構件70的電源電壓等而異，惟較佳是落在被接合構件70的底面積的5成以上9成以下的範圍內。若接觸面積Y落在上述範圍內，則能夠對被接合構件70穩定地供給電力，且在被接合構件70產生的熱之從電極端子71往電路圖樣40的傳導性會提升。
金屬基板20，是成為金屬基底基板10的基底之構件。作為金屬基板20，能夠使用銅板、鋁板及它們的層積板。
絕緣層30，是用來將金屬基板20與電路圖樣40絕緣之層。絕緣層30，由包含絕緣性樹脂31與陶瓷粒子32(熱傳導性填料)之絕緣性樹脂組成物所形成。將絕緣層30由包含絕緣性高的絕緣性樹脂31與熱傳導度高的陶瓷粒子32之絕緣性樹脂組成物來形成，藉此會維持絕緣性，同時能夠使從電路圖樣40至金屬基板20的金屬基底基板10全體的熱阻進一步減低。
絕緣性樹脂31，較佳為聚醯亞胺樹脂或聚醯胺醯亞胺樹脂，或是它們的混合物。聚醯亞胺樹脂及聚醯胺醯亞胺樹脂帶有醯亞胺鍵，故具有優良的耐熱性及機械特性。
作為陶瓷粒子32，能夠使用矽石(二氧化矽)粒子、礬土(氧化鋁)粒子、氮化硼(BN)粒子、氧化鈦粒子、摻氧化鋁矽石粒子、氧化鋁水合物粒子、氮化鋁粒子等。陶瓷粒子32，可單獨使用1種，亦可組合2種以上使用。在該些陶瓷粒子當中，氧化鋁粒子就熱傳導性高這點較佳。陶瓷粒子32的形態雖無特別限制，惟較佳是微細的陶瓷粒子的凝聚粒子、或單結晶的陶瓷粒子。
微細的陶瓷粒子的凝聚粒子，可為一次粒子較弱地連結之黏聚體(agglomerate)，亦可為一次粒子較強地連結之聚集體(aggregate)。此外，亦可形成凝聚粒子彼此進一步集合而成之粒子集合體。陶瓷粒子32的一次粒子形成凝聚粒子而在絕緣層30中分散，藉此會形成陶瓷粒子32間的相互接觸所造成的網路，熱變得容易在陶瓷粒子32的一次粒子間傳導，絕緣層30的熱傳導度會提升。
作為微細的陶瓷粒子的凝聚粒子的市售品，能夠使用AE50、AE130、AE200、AE300、AE380、AE90E(皆為日本AEROSIL股份有限公司製)、T400 (Wacker公司製)、SFP-20M(Denka股份有限公司製)等的矽石粒子，Alu65(日本AEROSIL股份有限公司製)、AA-04(住友化學股份有限公司製)等的氧化鋁粒子，AP-170S(Maruka公司製)等的氮化硼粒子，AEROXIDE (R)TiO2 P90(日本AEROSIL股份有限公司製)等的氧化鈦粒子，MOX170(日本AEROSIL股份有限公司製)等的摻氧化鋁矽石粒子，Sasol公司製的氧化鋁水合物粒子等。
單結晶的陶瓷粒子，較佳為具有α氧化鋁(αAl2O3)的晶體結構之α氧化鋁單結晶粒子。作為α氧化鋁單結晶粒子的市售品，能夠使用由住友化學股份有限公司販售之Advanced Alumina(AA)系列的AA-03、AA-04、AA-05、AA-07、AA-1.5等。
絕緣層30的陶瓷粒子32的含有量，較佳為落在5體積%以上60體積%以下的範圍內。若陶瓷粒子32的含有量太少，則絕緣層30的熱傳導性恐不會充分地提升。另一方面，若陶瓷粒子32的含有量太多，則絕緣性樹脂31的含有量相對地減少，恐無法穩定地維持絕緣層30的形狀。此外，陶瓷粒子32變得容易形成太過大的凝聚粒子，而絕緣層30的表面粗糙度Ra恐會變大。為了使絕緣層30的熱傳導性確實地提升，陶瓷粒子32的含有量較佳為10體積%以上。此外，為了使絕緣層30的形狀的穩定性確實地提升，而降低表面粗糙度Ra，陶瓷粒子32的含有量尤佳為50體積%以下。 絕緣層30的膜厚雖無特別限制，惟較佳是落在1μm以上200μm以下的範圍內，尤佳是落在3μm以上100μm以下的範圍內。
作為電路圖樣40的材料，能夠使用鋁、銅、銀、金、錫、鐵、鎳、鉻、鉬、鎢、鈀、鈦、鋅及該些金屬的合金。在該些金屬當中，以鋁、銅為佳，尤以鋁為佳。作為電路圖樣40的成形方法並無特別限制，例如能夠使用蝕刻法。
電路圖樣40的膜厚，較佳是落在10μm以上1000μm以下的範圍內，尤佳是落在20μm以上100μm以下的範圍內。若電路圖樣40的膜厚變得太薄，則熱阻恐變高。另一方面，若電路圖樣40的膜厚變得太厚，則恐難以藉由蝕刻法形成電路圖樣。此外，若電路圖樣40的膜厚變得太厚，則會因為構成接合構造體1的各材料的熱膨脹係數的差異，而對電路圖樣40賦予的熱應力變大，在冷熱循環中絕緣層30與電路圖樣40恐變得容易剝離。
作為被接合構件70的例子並無特別限制，可舉出半導體元件、電阻、電容器、水晶振盪器等。作為半導體元件的例子，可舉出MOSFET(Metal-oxide-semiconductor field effect transistor；金氧半導體場效電晶體)、IGBT(Insulated Gate Bipolar Transistor；絕緣閘雙極電晶體)、LSI(Large Scale Integration；大型積體電路)、LED(發光二極體)、LED晶片、LED-CSP(LED-Chip Size Package；LED晶片級封裝)。
作為導電性接合材60的材料，能夠使用金屬或合金。導電性接合材60，較佳為金屬粒子的燒結體。作為金屬粒子，能夠使用銀粒子、銅粒子、被錫被覆的銅粒子(錫被覆銅粒子)。該些金屬粒子可單獨使用1種，亦可組合2種以上使用。導電性接合材60的厚度，較佳是落在1μm以上100μm以下的範圍內。
金屬粒子的燒結體，能夠在使含有金屬粒子的膏介於金屬基底基板10的電路圖樣40與被接合構件70的電極端子71之間的狀態下加熱，使金屬粒子燒結，藉此做成。
接著，說明本實施形態之接合構造體的製造方法。 接合構造體，例如能夠藉由包含下述工程之方法而製造，即，在金屬基底基板的電路圖樣塗布金屬粒子膏而形成金屬粒子膏層之塗布工程、及在金屬粒子膏層之上裝載被接合構件之裝載工程、及將裝載了被接合構件的金屬基底基板加熱而使金屬粒子燒結體生成之接合工程。
塗布工程中，金屬粒子膏的塗布量，是事先求出藉由金屬粒子膏的加熱而生成之金屬粒子燒結體的熱傳導度λ，而以藉由金屬粒子膏的加熱而生成之金屬粒子燒結體與電路圖樣之接觸面積X、及金屬粒子燒結體與電極端子之接觸面積Y會滿足上述式(1)之方式來設定。作為在金屬基底基板的電路圖樣塗布金屬粒子膏的方法，能夠使用網版印刷法等的方法。
裝載工程中，以被接合構件的電極端子接觸金屬粒子膏層之方式，裝載被接合構件。
接合工程中，金屬基底基板的加熱，較佳是一面將被接合構件加壓一面進行。金屬基底基板的加熱溫度，為金屬粒子膏的金屬粒子燒結之溫度，較佳是落在200℃以上350℃以下的範圍內。加熱環境較佳是非氧化環境。
按照做成如以上般構成的本實施形態之接合構造體1，電路圖樣40與導電性接合材60之接觸面積X及被接合構件70的電極端子71與導電性接合材60之接觸面積Y、及導電性接合材60的熱傳導度λ滿足上述式(1)的關係，故接合構造體1的熱阻會減低。因此，能夠使在被接合構件產生的熱有效率地放出至外部。
此外，本實施形態之接合構造體1中，被接合構件70即使是LED晶片或功率模組仍會顯現優良的散熱性，能夠抑制熱所造成的LED晶片及功率模組的劣化。
此外，本實施形態之接合構造體1中，當導電性接合材60為自銀粒子、銅粒子、被錫被覆的銅粒子所成之群中選擇的至少1種金屬粒子的燒結體的情形下，導電性接合材60具有高熱傳導性，故能夠更確實地使在被接合構件70產生的熱有效率地放出至外部。
以上雖已說明本發明之實施形態，但本發明並非限定於此，在不脫離其發明之技術思想範圍內可適當變更。 例如，本實施形態之接合構造體1中，作為導電性接合材60雖示例了銀粒子、銅粒子、被錫被覆的銅粒子等的金屬粒子的燒結體，但導電性接合材60不限定於該些。例如，作為導電性接合材60亦可使用銲料。 [實施例]
以下藉由實施例說明本發明之作用效果。
[本發明例1：模擬] 圖2為在用來驗證前述式(1)的模擬中使用之接合構造體模型化示意截面圖。圖3為圖2的接合構造體的平面圖。模擬是使用LISA有限元素分析系統(Sonnenhof Holdings公司製)來進行。 圖2、3所示之接合構造體1S中，金屬基底基板10S，為依金屬基板20S、絕緣層30S、銅箔40S的順序層積而成之層積體。銅箔40S在絕緣層30S之上全體地形成。被接合構件70S，透過AlN(氮化鋁)構件72S與電極端子71S連接。被接合構件70S訂為LED晶片，電極端子71S訂為銅端子。接合構造體1S的各構件的特性如下記般。
金屬基板20S：平面尺寸：5mm×5mm、熱傳遞係數：300W/m2 K 絕緣層30S：厚度：100μm、熱傳導度：10W/mK 銅箔40S：厚度：35μm、熱傳導度：400W/mK 導電性接合材60S：厚度、熱傳導度記載於下記表1。 電極端子71S：厚度：35μm、熱傳導度：400W/mK AlN構件72S：厚度：635μm、熱傳導度：170W/mK 被接合構件70S：厚度：100μm、熱傳導度：1000000000W/mK、發熱密度：20W/m3 銅箔40S與導電性接合材60S之接觸面積X(mm2 )、電極端子71S與導電性接合材60S之接觸面積Y(mm2 )、SQRT(X)/SQRT(Y)記載於下記表1。
藉由模擬，獲得當被接合構件70S發熱時之接合構造體1S的熱分布。然後，求出接合構造體1S的各構件中的最高溫度(℃)、最低溫度(℃)、最高溫度與最低溫度之溫度差(最高溫度-最低溫度)。將此結果示於表1。 此外，從接合構造體1S的最高溫度與最低溫度之溫度差、及被接合構件70S的發熱量(W)，藉由下記式子算出接合構造體1S內的熱阻。然後，針對導電性接合材60S的熱傳導度λ為相同而SQRT(X)/SQRT(Y)為相異的接合構造體1S，求出當將SQRT(X)/SQRT(Y)=1.2的熱阻訂為100的情形下之熱阻的相對值。將此結果訂為相對熱阻(%)而示於表1。 熱阻(K/W)=(最高溫度-最低溫度)/發熱量
Figure 02_image005
圖4為藉由模擬而獲得的SQRT(X)/SQRT(Y)與相對熱阻之關係示意圖表。圖4中，將藉由導電性接合材60S的熱傳導度λ為相同的接合構造體1S而獲得的模擬結果以線連結。由圖4結果可知，當導電性接合材60S的熱傳導度λ為相同的情形下，隨著SQRT(X)/SQRT(Y)增加，相對熱阻會降低。此外，可知隨著導電性接合材60S的熱傳導度λ變大，隨著SQRT(X)/SQRT(Y)增加，相對熱阻的降低量會變大。
圖5為藉由模擬而獲得的導電性接合材的熱傳導度λ與當接合構造體的相對熱阻減少2%時的SQRT (X)/SQRT(Y)之關係示意圖表。圖5所示圖表中的黑圓點，為將導電性接合材60S的熱傳導度λ與當接合構造體S1的相對熱阻減少2%時(圖4所示圖表中相對熱阻成為98%時)的SQRT(X)/SQRT(Y)之關係予以繪製而成的點。此外，圖表中的曲線，為將繪製出的黑圓點做資料擬合而成之冪近似曲線。此冪近似曲線，以SQRT(X)/SQRT (Y)=2.9209×λ-0.141 表示。圖5所示圖表中，比此冪近似曲線還上側的區域，為接合構造體S1的相對熱阻減低2%以上的區域。是故，由此圖5的結果可知，當接合構造體S1的銅箔40S(電路圖樣)與導電性接合材60S之接觸面積(X)、電極端子71S與導電性接合材60S之接觸面積(Y)、導電性接合材60S的熱傳導度λ滿足SQRT(X)/SQRT(Y)≧2.9209×λ-0.141 的關係的情形下，相對熱阻能夠減低2%以上。
[本發明例2：在導電性接合材使用銀粒子燒結體之接合構造體] 製作出在銅基板(30mm×20mm×0.3mmt)之上，依序層積包含含氧化鋁粒子聚醯亞胺樹脂的絕緣層(厚度：30μm、氧化鋁粒子含有量：60體積%)、銅層(厚度：35μm)而成之銅基底基板。將此銅基底基板的銅層藉由蝕刻法蝕刻，形成電路圖樣。
在銅基底基板的電路圖樣塗布銀粒子膏(銀粒子的平均粒子徑：150nm)而形成銀粒子膏塗布層(寬度：10mm、厚度：50μm)。接下來，在銀粒子膏之上裝載LED晶片的電極端子(端子尺寸：1.65mm×0.45mm)。然後，一面將裝載的LED晶片加壓(10Pa)，一面於氮環境下以300℃加熱，使銀粒子膏的銀粒子燒結，製作出銅基底基板與LED晶片透過銀粒子燒結體接合而成之接合構造體。
分別測定獲得的接合構造體的電路圖樣與銀粒子燒結體之接觸面積(X)、LED晶片的電極端子與銀粒子燒結體之接觸面積(Y)、銀粒子燒結體的熱傳導度λ。然後，算出SQRT(X)/SQRT(Y)、及2.9209×λ-0.141 之結果，SQRT(X)/SQRT(Y)為23.2，2.9209×λ-0.141 為1.3。此外，以目視觀察獲得的接合構造體之結果，未確認到LED晶片的位置偏離或浮動。
[本發明例3：在導電性接合材使用銅粒子燒結體之接合構造體] 除了使用銅粒子膏(銅粒子的平均粒子徑：150nm)來取代銀粒子膏以外，如同本發明例2，製作出銅基底基板與LED晶片透過銅粒子燒結體接合而成之接合構造體。 分別測定獲得的接合構造體的電路圖樣與銅粒子燒結體之接觸面積(X)、LED晶片的電極端子與銅粒子燒結體之接觸面積(Y)、銅粒子燒結體的熱傳導度λ。然後，算出SQRT(X)/SQRT(Y)、及2.9209×λ-0.141 之結果，SQRT(X) /SQRT(Y)為23.2，2.9209×λ-0.141 為1.3。此外，以目視觀察獲得的接合構造體之結果，未確認到LED晶片的位置偏離或浮動。
[本發明例4：在導電性接合材使用錫被覆銅粒子燒結體之接合構造體] 除了使用錫被覆銅粒子膏(錫被覆銅粒子的平均粒子徑：9μm)來取代銀粒子膏以外，如同本發明例2，製作出銅基底基板與LED晶片透過錫被覆銅粒子燒結體接合而成之接合構造體。 分別測定獲得的接合構造體的電路圖樣與錫被覆銅粒子燒結體之接觸面積(X)、LED晶片的電極端子與錫被覆銅粒子燒結體之接觸面積(Y)、錫被覆銅粒子燒結體的熱傳導度λ。然後，算出SQRT(X)/SQRT(Y)、及2.9209×   λ-0.141 之結果，SQRT(X)/SQRT(Y)為23.2，2.9209×λ-0.141 為1.8。此外，以目視觀察獲得的接合構造體之結果，未確認到LED晶片的位置偏離或浮動。 [產業利用性]
本發明之接合構造體，能夠使在被接合構件產生的熱有效率地放出至外部。因此，即使被接合構件為LED晶片或功率模組等的發熱量多的電子零件，仍能抑制熱所造成的劣化。
1,1S:接合構造體 10,10S:金屬基底基板 20,20S:金屬基板 30,30S:絕緣層 31:絕緣性樹脂 32:陶瓷粒子 40:電路圖樣 40S:銅箔 60,60S:導電性接合材 70,70S:被接合構件 71,71S:電極端子 72S:AlN(氮化鋁)構件
[圖1]本發明一實施形態之接合構造體的概略截面圖。 [圖2]在用來驗證式(1)的模擬中使用之接合構造體模型化示意截面圖。 [圖3]圖2所示接合構造體的平面圖。 [圖4]藉由模擬而獲得的SQRT(X)/SQRT(Y)與相對熱阻之關係示意圖表。 [圖5]藉由模擬而獲得的導電性接合材的熱傳導度λ與當接合構造體的相對熱阻減少2%時的SQRT(X)/SQRT(Y)之關係示意圖表。
1:接合構造體
10:金屬基底基板
20:金屬基板
30:絕緣層
31:絕緣性樹脂
32:陶瓷粒子
40:電路圖樣
60:導電性接合材
70:被接合構件
71:電極端子

Claims (3)

  1. 一種接合構造體，係具有電路圖樣的基板與具備電極端子的被接合構件透過導電性接合材而接合而成之接合構造體，其特徵為， 當將前述電路圖樣與前述導電性接合材之接觸面積訂為X、前述電極端子與前述導電性接合材之接觸面積訂為Y、前述導電性接合材的熱傳導度訂為λ時，滿足下記式(1)，
    Figure 03_image001
  2. 如請求項1記載之接合構造體，其中，前述被接合構件，為LED晶片、或功率模組。
  3. 如請求項1或2記載之接合構造體，其中，前述導電性接合材為自銀粒子、銅粒子、被錫被覆的銅粒子所成之群中選擇的至少1種金屬粒子的燒結體。
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