TW202021031A - 載台機構、處理裝置及載台機構的動作方法 - Google Patents

載台機構、處理裝置及載台機構的動作方法 Download PDF

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TW202021031A
TW202021031A TW108125068A TW108125068A TW202021031A TW 202021031 A TW202021031 A TW 202021031A TW 108125068 A TW108125068 A TW 108125068A TW 108125068 A TW108125068 A TW 108125068A TW 202021031 A TW202021031 A TW 202021031A
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electrostatic chuck
ground potential
stage
substrate
conductive
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元村祐己
曽根浩
加賀谷靖之
鈴木行
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日商東京威力科創股份有限公司
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Abstract

[課題]提供較習知技術更能夠抑制殘留電荷引起的基板之偏移或破損之技術。 [解決手段]本揭示之一態樣的載台機構，係具有：靜電吸盤，在表面形成有可以與基板之背面電性接觸的導電膜；導電構件，與上述導電膜電性連接，且爬行至上述靜電吸盤之背面；及移動構件，透過連接構件電性連接於上述導電構件，且可以在連接於接地電位的位置與不連接於接地電位的位置之間移動。

Description

載台機構、處理裝置及載台機構的動作方法
本揭示關於載台機構、處理裝置及載台機構的動作方法。
使吸附於靜電吸盤之吸附面的基板從靜電吸盤分離時，若在蓄積於靜電吸盤或基板的殘留電荷引起的靜電力殘留的狀態下上升升降銷時，會有產生基板之偏移或破損之情況。因此，將蓄積於靜電吸盤或基板的殘留電荷除去之技術為已知(例如參照專利文獻1、2)。 [先前技術文獻] [專利文獻]
[專利文獻1]專利第5323317號公報 [專利文獻2]美國專利第9595464號說明書
[發明所欲解決之課題]
本揭示提供比起習知技術更可以抑制殘留電荷引起的基板之偏移或破損的技術。 [解決課題之手段]
本揭示之一態樣的載台機構，係具有：靜電吸盤，係在表面形成有可以與基板之背面電性接觸的導電膜；導電構件，係與上述導電膜電性連接，且爬行至上述靜電吸盤之背面；及移動構件，係透過連接構件電性連接於上述導電構件，且可以在連接於接地電位的位置與不連接於接地電位的位置之間移動。 [發明效果]
依據本揭示，較習知技術更能夠抑制殘留電荷引起的基板之偏移或破損。
以下，參照圖面說明不用來限定本揭示之例示之實施形態。附加之全圖面中，針對同一或對應的構件或元件附加同一或對應的參照符號，並省略重複之說明。
(處理裝置) 針對本揭示之一實施形態的處理裝置，舉出從相對於基板之一例亦即半導體晶圓(以下稱為「晶圓」)之表面傾斜配置的靶材向晶圓放射濺鍍粒子，藉此，而在晶圓形成膜的濺鍍裝置之例進行說明。圖1係表示處理裝置之構成例之剖面圖。
如圖1所示，處理裝置10具有處理容器12。處理容器12係包含本體12a及蓋體12b。本體12a具有大致圓筒狀，上端為開口。本體12a被接地。本體12a之中心軸線與軸線C一致。蓋體12b設置於本體12a上。本體12a之上端之開口，係藉由蓋體12b、保持器30、及保持器支撐部32進行關閉。關於保持器30及保持器支撐部32如後述。
於處理容器12之內部設置有載台機構100。載台機構100係包含載台110。載台機構100之詳細如後述。
於載台110結合有軸體22。軸體22，係從載台110向下方延伸。軸體22，係通過本體12a之底部延伸至處理容器12之外部。在軸體22與本體12a之底部之間設置有對處理容器12之內部進行氣密密封之密封機構23。軸體22之中心軸線係與軸線C大致一致。
軸體22，係於處理容器12之外部連接於驅動裝置24。驅動裝置24，係使軸體22以該軸體22之中心軸線作為旋轉軸而旋轉，而且，使軸體22上下移動。在載台110上載置晶圓W時，驅動裝置24係使載台110配置於處理容器12內之比較下方之位置。藉由搬送裝置(未圖示)被搬送至處理容器12內的晶圓W，係被靜電吸盤114吸附。之後，驅動裝置24，為了進行對晶圓W的成膜而使載台110移動至上方。在載台110之往上方之移動中，遮罩26係配置於載台110上。遮罩26為具有大致環形狀的板狀體。遮罩26具有僅較晶圓W之直徑稍小的直徑之開口26a。遮罩26之外緣部26e向下方突出。
於處理容器12內設置有遮罩支撐體28。遮罩支撐體28係從處理容器12垂吊。遮罩支撐體28，係以不阻礙載台110之上下移動的方式，在載台110移動的區域(沿著軸線C的區域)具有開口。遮罩支撐體28具有支撐部28a。支撐部28a，係於上方設有開口，形成相對於軸線C而在周方向延伸的凹部。遮罩26之外緣部26e被配置於藉由支撐部28a形成的的凹部。藉此，遮罩26，從載台110分離時，係藉由遮罩支撐體28進行支撐。
處理裝置10具有氣體供給部29。氣體供給部29對處理容器12之內部供給氣體。又，處理裝置10具有保持器30及保持器支撐部32。保持器支撐部32，係絕緣體，且安裝於蓋體12b。保持器支撐部32，係對保持器30進行支撐，使保持器30與蓋體12b呈電性絕緣。保持器30係將靶材34予以保持。保持器30連接有電源36。藉由電源36對保持器30施加電壓時，於靶材34之附近產生電場。藉此，使氣體供給部29供給的氣體解離，生成離子。生成的離子碰撞靶材34，從靶材34放出物質。放出的物質沈積於晶圓W上。
處理裝置10具有對處理裝置10之全體之動作進行控制之電腦等之控制部40。控制部40對處理裝置10之各部之動作進行控制。
於控制部40連接有記憶部，於該記憶部記憶有在控制部40實現處理裝置10所執行的各種處理的控制程式、或對應於處理條件而在處理裝置10之各部執行處理之各種程式。各種程式係記憶於記憶媒體，可以儲存於記憶部。記憶媒體可以是硬碟或半導體記憶體，亦可以是CD-ROM、DVD、快閃記憶體等之可攜性者。又，藉由有線或無線等之通信手段，從其他裝置或主機電腦適當地傳送至記憶部亦可。
於上述之處理裝置10中，首先，藉由驅動裝置24使載台110配置於較成膜時之位置更下方之位置。接著，晶圓W藉由搬送裝置(未圖示)被載置於載台110上，被吸附於靜電吸盤114。接著，藉由驅動裝置24使載台110上升，遮罩26相對於載台110被固定。接著，藉由驅動裝置24使載台110進一步上升，移動至成膜時之位置。接著，藉由驅動裝置24使載台110旋轉，並且從氣體供給部29對處理容器12之內部供給氣體，從電源36對保持器30施加電壓。藉此，使從靶材34放出的物質沈積於晶圓W上，形成所要的膜。
(載台機構) 說明圖1之處理裝置10中的載台機構100之一例。圖2係表示載台機構100之一例之剖面圖。圖2中係將設置有複數個升降銷之中之1個的部分擴大表示。又，關於設置有其他升降銷之部分亦同樣。圖3係表示靜電吸盤114之一例之平面圖。圖4係將靜電吸盤114之一部分擴大表示的斜視圖，係將圖3中的區域A擴大表示。圖5係將靜電吸盤114之一部分擴大表示的平面圖，係將圖3中的區域B擴大表示。圖6為形成於靜電吸盤114之表面的導電膜與吸盤電極114a間之位置關係之說明圖。
如圖2所示，載台機構100具有：載台110、導電構件120、升降銷機構130、及押壓構件140。
載台110具有基座部112及靜電吸盤114。
基座部112具有大致圓盤形狀。於基座部112內埋設有加熱器112a。於加熱器112a連接有電源112b。藉由從電源112b對加熱器112a供給電力，可以將載台110調整為規定之溫度。又，加熱器112a，可以埋設於靜電吸盤114內，亦可以是可以黏貼於載台110的片狀加熱器。又，將加熱器112a分割為複數個區亦可。加熱器112a分割為複數個區之情況下，可以按照分割的每一區對載台110之溫度進行調整。
靜電吸盤114設置於基座部112上。靜電吸盤114，係具有大致圓盤形狀，其中心大致位於軸線C上。靜電吸盤114係在一對介電質膜之間夾持有藉由導電膜形成的吸盤電極114a者。於吸盤電極114a連接有電源114b。靜電吸盤114，係藉由從電源114b施加的電壓，藉由靜電力將晶圓W吸附保持於靜電吸盤114上。如圖3所示，於靜電吸盤114之表面形成有氣體孔114c、氣體溝114d、焊墊114e、密封帶114f、除電部114g、及接觸部114h。焊墊114e、密封帶114f、除電部114g、及接觸部114h例如藉由TiN等之導電膜形成。
氣體孔114c係形成於靜電吸盤114之吸附面。氣體孔114c連接於外部之導熱氣體供給源，將氦氣體(He)、氬氣體(Ar)等之導熱氣體供給至氣體溝114d。一實施形態中，氣體孔114c係在靜電吸盤114之吸附面之中心附近形成1個。但是，氣體孔114c可以在靜電吸盤114之吸附面形成複數個。
氣體溝114d係形成於靜電吸盤114之吸附面。氣體溝114d作為氣體孔114c所供給的導熱氣體之流路而發揮功能。一實施形態中，氣體溝114d遍及靜電吸盤114之吸附面之全面而形成。藉此，可以對靜電吸盤114之全面供給導熱氣體，因此吸附於靜電吸盤114之吸附面的晶圓W之均熱性可以提升。
焊墊114e係形成於靜電吸盤114之吸附面。焊墊114e係形成為，在晶圓W吸附於靜電吸盤114之吸附面時，可以與晶圓W之背面接觸。焊墊114e，係在晶圓W吸附於靜電吸盤114之表面時使產生晶圓滑動，減輕對晶圓W之應力。一實施形態中，遍及靜電吸盤114之吸附面之全面形成多數個圓形狀之焊墊114e。
密封帶114f係沿著靜電吸盤114之吸附面之外周遍及全周被形成。密封帶114f形成為，在晶圓W吸附於靜電吸盤114之吸附面時，可以與晶圓W之背面接觸。密封帶114f，係形成於插通孔114i之周圍，該插通孔114i被形成於靜電吸盤114之吸附面的升降銷136插通。密封帶114f，在晶圓W載置於靜電吸盤114之吸附面時可以與晶圓W之背面接觸。藉此，可以抑制在吸附於靜電吸盤114之吸附面的晶圓W之背面與靜電吸盤114之表面之間之空間被供給的導熱氣體之由該空間洩漏。
除電部114g，係在靜電吸盤114之吸附面，從靜電吸盤114之中心部沿著徑向至外緣部為止以線狀延伸而形成，在外緣部中連接於密封帶114f。除電部114g，在晶圓W載置於靜電吸盤114之吸附面時係可以與晶圓W之背面接觸。藉此，靜電吸盤114之中心部與外緣部成為同電位。又，靜電吸盤114具有一對吸盤電極114a的雙曲型之情況下，如圖6所示，除電部114g形成為，在俯視狀態下與一方之吸盤電極114a1重疊，與另一方之吸盤電極114a2不重疊的位置為較佳。藉此，可以抑制除電部114g對靜電吸盤114之靜電力之影響。
接觸部114h係從形成於靜電吸盤114之吸附面的密封帶114f遍及載台110之外緣部被形成。於接觸部114h電連接有導電構件120。
導電構件120，係與形成於載台110之表面的接觸部114h電連接，且爬行至載台110之背面。導電構件120係藉由鋁等之導電材料形成。
升降銷機構130具有殼體132、軸心134、升降銷136、及連接構件138。
殼體132，係具有圓筒形狀，透過陶瓷等之絕緣構件被固定於軸體22。藉此，殼體132相對於處理容器12設為電性浮動(electrical floating)狀態，並且與軸體22一體升降。殼體132例如藉由不鏽鋼。
軸心134，係移動構件之一例，相對於殼體132設置成為可以上下滑動。軸心134例如由不鏽鋼等之導電材料形成。軸心134可以在連接於接地電位的位置與不連接於接地電位的位置之間移動。一實施形態中，連接於接地電位的位置為，與處理容器12電連接之位置，係與設置於處理容器12之底部的導電性之突起部12c之上端接觸的位置。另一方面，不連接於接地電位的位置為，與處理容器12呈電性絕緣之位置，係從設置於處理容器12之底部的導電性之突起部12c之上端分離之位置。又，圖2中表示軸心134與突起部12c之上端接觸之狀態。從增長載台110之下降時之衝程觀點而言，突起部12c較好是藉由彈性體12d(例如線圈彈簧)之彈性變形而可以上下移動。該情況下，連接構件138完全縮回時載台110與升降銷136之位置關係固定而較佳，因此將使突起部12c移動的彈性體之反作用力設定成為大於連接構件138之反作用力。
升降銷136安裝於軸心134之上端。藉此，升降銷136與軸心134成為一體升降。升降銷136係藉由鈦(Ti)等之導電材料形成。升降銷136藉由軸心134被突起部12c推押而與軸心134成為一體朝上方移動。藉此，升降銷136可以從靜電吸盤114之吸附面之下方之位置至上方之位置為止進行升降。升降銷136朝上方移動而其上端與晶圓W之背面接觸時，靜電吸盤114或晶圓W所蓄積的殘留電荷透過升降銷136、軸心134、突起部12c、及處理容器12被進行除電。又，藉由升降銷136之上端移動至比靜電吸盤114之吸附面更上方，而以升降銷136之上端支撐晶圓W並使晶圓W從靜電吸盤114之吸附面分離。
連接構件138係藉由不鏽鋼等之導電材料形成。連接構件138之一端被固定於軸心134之上端，另一端被固定於導電構件120。藉此，軸心134與導電構件120透過連接構件138常時電連接而成為同電位之狀態。一實施形態中，連接構件138為線圈彈簧。藉此，即使軸心134與導電構件120之間之相對位置有變化之情況下，軸心134與導電構件120亦可以維持於電連接的狀態。又，連接構件138例如為電線亦可。
押壓構件140係將導電構件120按壓至形成於靜電吸盤114的接觸部114h。藉此，可以吸收元件公差，並且可以賦予一定之接觸力。一實施形態中，押壓構件140例如包含彈簧，藉由彈簧之彈性力將導電構件120按壓至接觸部114h。
(載台機構之動作方法) 針對上述處理裝置10之載台機構100之動作方法，舉出藉由升降銷136推升吸附於靜電吸盤114之吸附面的晶圓W使其從吸附面分離時之動作之例進行說明。
圖7~圖10為載台機構100之動作之說明圖。圖7係表示載台110處於晶圓W被吸附於靜電吸盤114之吸附面之位置的情況之載台機構100之各部之位置關係。圖8係表示處於軸心134之下端與突起部12c之上端接觸的位置之情況下之載台機構100之各部之位置關係。圖9係表示處於升降銷136與晶圓W之背面接觸的位置之情況下之載台機構100之各部之位置關係。圖10係表示處於藉由升降銷136使晶圓W從靜電吸盤114之吸附面分離並支撐的位置之情況下之載台機構100之各部之位置關係。又，圖7~圖10中的箭頭L係表示靜電吸盤114與處理容器12之間之電連接狀態。又，圖7~圖10中係表示載台110未載置晶圓W之情況下使載台機構100動作時之狀態。
首先，如圖7所示，載台110處於在靜電吸盤114之吸附面將晶圓W進行吸附之位置之情況下， 升降銷136之上端從靜電吸盤114之吸附面被引入，且軸心134之下端與突起部12c之上端分離。因此升降銷機構130及靜電吸盤114未接地。
接著，如圖8所示，下降載台110使軸心134與突起部12c接觸。藉此，靜電吸盤114(密封帶114f、除電部114g、及接觸部114h)、導電構件120、連接構件138、軸心134、突起部12c、及處理容器12成為電連接。因此晶圓W之背面及靜電吸盤114透過處理容器12而接地。結果，蓄積於晶圓W或靜電吸盤114的殘留電荷透過導電構件120、連接構件138、軸心134、突起部12c、及處理容器12被除電。
接著，如圖9所示，藉由進一步下降載台110，使升降銷136之上端與靜電吸盤114之吸附面成為同一高度，或從靜電吸盤114之吸附面僅些微突出而與晶圓W之背面接觸。藉此蓄積於晶圓W的殘留電荷透過升降銷136、軸心134、突起部12c、及處理容器12被除電。
接著，如圖10所示，藉由進一步下降載台110，使升降銷136進一步從靜電吸盤114之吸附面突出而支撐晶圓W之背面，使晶圓W從靜電吸盤114之吸附面分離。此時，晶圓W及靜電吸盤114已被除電，因此可以抑制晶圓W之偏移或破損。
如以上這樣，本揭示之一實施形態中，在藉由升降銷136推升晶圓W之前使晶圓W之背面及靜電吸盤114之吸附面接地。藉此，在藉由升降銷136推升晶圓W之前，可以對蓄積於晶圓W或靜電吸盤114的殘留電荷進行除電。因此可以抑制推升晶圓W時之晶圓W之偏移或破損。又，藉由軸心134與突起部12c接觸使晶圓W之背面及靜電吸盤114之吸附面接地，藉此，而對蓄積於晶圓W或靜電吸盤114的殘留電荷進行除電，因此無需另外設置除電用電路或開關機構･電路等。亦即，可以藉由簡易的構造對蓄積於晶圓W或靜電吸盤114的殘留電荷進行除電。
又，本揭示之一實施形態中，在對吸盤電極114a施加電壓使晶圓W吸附於靜電吸盤114之吸附面時，軸心134與突起部12c為分離。藉此，靜電吸盤114及升降銷機構130不接地，成為電性浮動之狀態。因此可以防止受到靜電吸盤114之靜電力之影響。
又，本揭示之一實施形態中，係在靜電吸盤114之吸附面，從靜電吸盤114之中心部沿著徑向至外緣部為止，形成以線狀延伸而且在外緣部與密封帶114f連接的除電部114g。藉此，蓄積於晶圓W之背面之中心附近的殘留電荷透過除電部114g被除電，因此對晶圓W之背面之全體可以有效地進行除電，並且殘存於靜電吸盤114之表面的電荷亦可以有效地除去。
又，本揭示之一實施形態中，在俯視狀態下，除電部114g係形成於與雙曲型之吸盤電極114a之一方之吸盤電極114a重疊，且與另一方之吸盤電極114a不重疊的位置。藉此，可以抑制除電部114g之設置對靜電吸盤114之靜電力之影響。
又，本揭示之一實施形態中，設置有將導電構件120按壓至靜電吸盤114之接觸部114h的押壓構件140。藉此，可以吸收元件公差，並且可以賦予一定之接觸力。
應考慮為此次揭示的實施形態全部之點僅為例示並非用來限制者。上述之實施形態，在不脫離申請專利範圍及其趣旨之情況下，可以進行各種形態之省略、置換、變更。
10:處理裝置 12:處理容器 12c:突起部 12d:彈性體 100:載台機構 110:載台 114:靜電吸盤 114a:吸盤電極 114f:密封帶 114g:除電部 114h:接觸部 120:導電構件 130:升降銷機構 134:軸心 136:升降銷 138:連接構件 140:押壓構件 W:晶圓
[圖1]表示處理裝置之構成例之剖面圖。 [圖2]表示載台機構之一例之剖面圖。 [圖3]表示靜電吸盤之一例之平面圖。 [圖4]將靜電吸盤之一部分擴大表示的斜視圖。 [圖5]將靜電吸盤之一部分擴大表示的平面圖。 [圖6]形成於靜電吸盤之表面的導電膜與吸盤電極之位置關係之說明圖。 [圖7]載台機構之動作之說明圖(1)。 [圖8]載台機構之動作之說明圖(2)。 [圖9]載台機構之動作之說明圖(3)。 [圖10]載台機構之動作之說明圖(4)。
12a:本體
12c:突起部
12d:彈性體
100:載台機構
110:載台
112:基座部
114:靜電吸盤
120:導電構件
130:升降銷機構
132:殼體
134:軸心
136:升降銷
138:連接構件
140:押壓構件

Claims (12)

  1. 一種載台機構，具有： 靜電吸盤，係在表面形成有可以與基板之背面電性接觸的導電膜； 導電構件，係與上述導電膜電性連接，且爬行至上述靜電吸盤之背面；及 移動構件，係透過連接構件電性連接於上述導電構件，且可以在連接於接地電位的位置與不連接於接地電位的位置之間移動。
  2. 如申請專利範圍第1項之載台機構，其中 該載台機構設置於處理容器內， 上述連接於接地電位的位置為，與上述處理容器電性連接的位置， 上述不連接於接地電位的位置為，與上述處理容器呈電性絕緣之位置。
  3. 如申請專利範圍第1或2項之載台機構，其中 上述導電膜，係在上述靜電吸盤之吸附面，從上述靜電吸盤之中心部沿著徑向至外緣部為止以線狀延伸而形成。
  4. 如申請專利範圍第1至3項中任一項之載台機構，其中 上述靜電吸盤為，具有一對吸盤電極的雙曲型， 上述導電膜，在俯視狀態下，係形成於和一方之吸盤電極重疊，且和另一方之吸盤電極不重疊的位置。
  5. 如申請專利範圍第1至4項中任一項之載台機構，其中 具有將上述導電構件按壓至上述導電膜的押壓構件。
  6. 如申請專利範圍第1至5項中任一項之載台機構，其中 於上述移動構件安裝有與上述基板之背面可以接觸的升降銷， 上述移動構件為，在連接於上述接地電位的位置使上述升降銷與上述基板之背面接觸，在不連接於上述接地電位的位置使上述升降銷與上述基板之背面分離。
  7. 如申請專利範圍第1至6項中任一項之載台機構，其中 上述連接構件為彈性體。
  8. 如申請專利範圍第7項之載台機構，其中 上述彈性體為線圈彈簧。
  9. 一種處理裝置，係具備： 處理容器；及 載台機構，係設置於上述處理容器內，用於載置基板； 上述載台機構具有： 靜電吸盤，係在表面形成有可以與基板之背面電性接觸的導電膜； 導電構件，係與上述導電膜電性連接，且爬行至上述靜電吸盤之背面；及 移動構件，係透過連接構件電性連接於上述導電構件，且可以在連接於接地電位的位置與不連接於接地電位的位置之間移動。
  10. 如申請專利範圍第9項之處理裝置，其中 具備：導電性之突起部，其設置於上述處理容器之底部，且可以上下移動； 連接於上述接地電位的位置為，上述移動構件與上述突起部接觸的位置， 不連接於上述接地電位的位置為，上述移動構件與上述突起部分離之位置。
  11. 如申請專利範圍第10項之處理裝置，其中 上述連接構件係藉由第1彈性體形成， 上述突起部，係藉由第2彈性體之彈性變形而可以上下移動， 上述第2彈性體之反作用力大於上述第1彈性體之反作用力。
  12. 一種載台機構之動作方法，該載台機構具有： 靜電吸盤，係在表面形成有可以與基板之背面電性接觸的導電膜； 導電構件，係與上述導電膜電性連接，且爬行至上述靜電吸盤之背面； 移動構件，係透過連接構件電性連接於上述導電構件，且可以在連接於接地電位的位置與不連接於接地電位的位置之間移動；及 升降銷，係安裝於上述移動構件，且可以接觸上述基板之背面； 該動作方法， 係使上述移動構件移動至連接於上述接地電位的位置之後，使上述升降銷接觸上述基板之背面。
TW108125068A 2018-07-30 2019-07-16 載台機構、處理裝置及載台機構的動作方法 TW202021031A (zh)

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