JP6869978B2 - バイアス可能な回転可能静電チャック - Google Patents
バイアス可能な回転可能静電チャック Download PDFInfo
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- 230000008878 coupling Effects 0.000 claims description 47
- 238000010168 coupling process Methods 0.000 claims description 47
- 238000005859 coupling reaction Methods 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 37
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000012212 insulator Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 14
- 239000004020 conductor Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 239000012530 fluid Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R39/00—Rotary current collectors, distributors or interrupters
- H01R39/60—Devices for interrupted current collection, e.g. commutating device, distributor, interrupter
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R39/00—Rotary current collectors, distributors or interrupters
- H01R39/64—Devices for uninterrupted current collection
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
したがって、本発明者らは、改善された回転可能な加熱された静電チャックの実施形態を提供した。
本開示の他のおよびさらなる実施形態が以下でより詳細に記載される。
回転可能なRF結合装置の実施形態が本明細書で提供される。本発明の可搬式RF結合装置は、有利には、回転する静電チャック(ESC)にRF電力を容量結合することができ、したがって、処理される基板上の堆積均一性を改善する。
チャンバ100は、基板処理中にチャンバ内部容積120内の準大気圧を維持するように適切に適合させた真空チャンバである。チャンバ100は、チャンバ内部容積120の上半分に位置する処理容積119を囲むリッド104によってカバーされたチャンバ本体106を含む。また、チャンバ100は、そのような構成要素とイオン化されたプロセス材料との間の望ましくない反応を防止するために、様々なチャンバ部品の周囲を囲む1つまたは複数のシールド105を含むことができる。チャンバ本体106およびリッド104は、アルミニウムなどの金属で作られてもよい。チャンバ本体106は、結合を介してグランド115に接地されてもよい。
中空支持シャフト112は、流体源142、ガス供給源141、チャッキング電源140、およびRF源(例えば、RFプラズマ電源170およびRFバイアス電源117)を静電チャック150に結合するための導管を提供する。一部の実施形態では、RFプラズマ電源170およびRFバイアス電源117は、それぞれのRF整合回路網(RF整合回路網116のみを図示)を介して静電チャックに結合されている。
チャンバ100は、チャンバ100を排気するために使用されるスロットルバルブ(図示せず)および真空ポンプ(図示せず)を含む真空システム114に結合され、真空システム114と流体連結する。チャンバ100内部の圧力は、スロットルバルブおよび/または真空ポンプを調節することによって調整されてもよい。また、チャンバ100は、内部に配置された基板を処理するためにチャンバ100に1つまたは複数のプロセスガスを供給することができるプロセスガス供給源118に結合され、プロセスガス供給源118と流体連結する。
図2は、本開示の実施形態による静電チャック(チャック200)の断面図を表す。チャック200は、ディスク202と、ディスク202の底部から延出するシャフト204と、ディスク202、シャフト204、およびチャック200の(以下に記載する)他の構成要素を囲むハウジング206と、を含む。
上記したように、ディスク202は、1つまたは複数のRFバイアス電極210を含むこともできる。1つまたは複数のRFバイアス電極210は、イオンをプラズマからディスク202上に配置された基板に向かって引き付けるようにRF電力に容量結合されている。電力は、外部のRF電源(例えば、RFバイアス電源117)から電力を受け取る(以下に記載する)回転可能なRF結合装置300を介してRFバイアス電極210に送出される。回転可能なRF結合装置300は、RFバイアス電極210に容量結合されており、したがって導体を横切るいかなる直接的な電気的結合も除去する。したがって、ディスク202を回転させながら、RFバイアス電極210に電力を送出することができる。
回転可能なRF結合装置300は、RF入力タップ324を介してRFバイアス電源117または別の電源(図示せず)から電力を受け取る。回転可能な分割シリンダ330の真下に配置されたセラミックシリンダ332は、有利にはRF波によるチャッキング電源との干渉を防止する。
前述の事項は、本開示の実施形態を対象としているが、本開示の他のおよびさらなる実施形態が本開示の基本的な範囲から逸脱せずに考案されてもよい。
Claims (9)
- 基板を支持するための支持表面、および反対側の第2の表面を有する誘電体ディスクであって、少なくとも1つのチャック電極が前記誘電体ディスク内部に配置されている、誘電体ディスクと、
前記誘電体ディスクの下方に配置され、前記誘電体ディスクを加熱するための複数のランプを有するランプハウジングと、
前記複数のランプによって生成された熱を吸収するように前記ランプハウジングの下方に配置された金属プレートと、
前記ランプハウジングおよび前記金属プレートを貫いて延在し、前記誘電体ディスクを前記ランプハウジングに対して離間した関係で支持するように、回転可能な高周波(RF)結合装置の第1の端部で前記誘電体ディスクに結合された回転可能な高周波(RF)結合装置と、
シャフトの第1の端部で前記回転可能なRF結合装置の第2の端部に結合されたシャフトと、
前記ランプハウジングおよび前記金属プレートに対して、前記シャフト、前記RF結合装置の一部、および前記誘電体ディスクを回転させるように前記シャフトに結合された回転組立体と、
前記シャフトの周りに配置されたベアリング組立体であって、前記少なくとも1つのチャック電極に電力を提供するために前記ベアリング組立体を介して電力を供給することができるように、前記少なくとも1つのチャック電極に電気的に結合されている、ベアリング組立体、
を備える、静電チャック。 - 前記回転可能なRF結合装置が、
導電性プレートと、
前記誘電体ディスク内部に配置された1つまたは複数のRFバイアス電極にRF電力を提供するように前記誘電体ディスクに結合された回転可能な分割シリンダと、
前記導電性プレートにRF電力を結合するように前記導電性プレートに結合された複数のRF入力タップと、
前記導電性プレートに結合され、前記回転可能な分割シリンダを取り囲む静止リングと、
前記導電性プレート、前記静止リング、および前記回転可能な分割シリンダを取り囲む接地されたシールドと、
を備える、請求項1に記載の静電チャック。 - 前記回転可能なRF結合装置が、
前記接地されたシールドと、前記導電性プレートおよび前記静止リングとの間に配置された1つまたは複数の絶縁体、
をさらに備える、請求項2に記載の静電チャック。 - 前記回転可能なRF結合装置が、
前記静止リングから前記回転可能な分割シリンダへのRF電力の容量性結合を容易にするために前記静止リングと前記回転可能な分割シリンダとの間に配置された間隙
をさらに備える、請求項2に記載の静電チャック。 - 前記回転可能なRF結合装置が、
前記回転可能な分割シリンダを貫いて延在し、前記少なくとも1つのチャック電極に結合された複数の電気タップ、
をさらに備える、請求項4に記載の静電チャック。 - 前記静電チャックが双極静電チャックであり、前記複数の電気タップが3つの電気タップを含み、第1の電気タップが正電圧を伝え、第2の電気タップが負電圧を伝え、第3の電気タップが電気的に浮遊している、請求項5に記載の静電チャック。
- 前記回転組立体が磁気回転組立体である、請求項1から6のいずれか1項に記載の静電チャック。
- 前記複数のランプがランプの内側アレイおよび独立して制御可能なランプの外側アレイを含む、請求項1から6のいずれか1項に記載の静電チャック。
- 前記回転可能なRF結合装置を前記静電チャックと位置合わせするために前記回転可能なRF結合装置の真下に配置されたトーションばね、
をさらに備える、請求項1から6のいずれか1項に記載の静電チャック。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562247745P | 2015-10-28 | 2015-10-28 | |
US62/247,745 | 2015-10-28 | ||
PCT/US2016/059500 WO2017075474A1 (en) | 2015-10-28 | 2016-10-28 | Biasable rotatable electrostatic chuck |
Publications (2)
Publication Number | Publication Date |
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JP2019503066A JP2019503066A (ja) | 2019-01-31 |
JP6869978B2 true JP6869978B2 (ja) | 2021-05-12 |
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JP2018521344A Active JP6869978B2 (ja) | 2015-10-28 | 2016-10-28 | バイアス可能な回転可能静電チャック |
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US (1) | US10490434B2 (ja) |
EP (1) | EP3369109B1 (ja) |
JP (1) | JP6869978B2 (ja) |
KR (1) | KR102657486B1 (ja) |
CN (1) | CN108352352B (ja) |
TW (1) | TWI725067B (ja) |
WO (1) | WO2017075474A1 (ja) |
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US9887120B2 (en) * | 2015-11-03 | 2018-02-06 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US10784139B2 (en) | 2016-12-16 | 2020-09-22 | Applied Materials, Inc. | Rotatable electrostatic chuck having backside gas supply |
US10573498B2 (en) | 2017-01-09 | 2020-02-25 | Applied Materials, Inc. | Substrate processing apparatus including annular lamp assembly |
CN118412315A (zh) * | 2017-06-16 | 2024-07-30 | 周星工程股份有限公司 | 基板处理装置和用于真空的旋转电连接器 |
KR102254224B1 (ko) * | 2017-11-21 | 2021-05-20 | 램 리써치 코포레이션 | 하단 링 및 중간 에지 링 |
US11149345B2 (en) | 2017-12-11 | 2021-10-19 | Applied Materials, Inc. | Cryogenically cooled rotatable electrostatic chuck |
US11562890B2 (en) | 2018-12-06 | 2023-01-24 | Applied Materials, Inc. | Corrosion resistant ground shield of processing chamber |
CN110265323B (zh) * | 2019-05-31 | 2021-09-03 | 拓荆科技股份有限公司 | 具有接点阵列的晶圆加热座 |
US20220319896A1 (en) * | 2021-04-02 | 2022-10-06 | Applied Materials, Inc. | Rotating biasable pedestal and electrostatic chuck in semiconductor process chamber |
KR102589182B1 (ko) * | 2021-08-31 | 2023-10-16 | 피에스케이 주식회사 | 기판 처리 장치 및 유전체 판 정렬 방법 |
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US10490434B2 (en) | 2019-11-26 |
TW201721799A (zh) | 2017-06-16 |
EP3369109B1 (en) | 2021-01-06 |
EP3369109A1 (en) | 2018-09-05 |
KR20180061421A (ko) | 2018-06-07 |
TWI725067B (zh) | 2021-04-21 |
CN108352352B (zh) | 2023-05-09 |
EP3369109A4 (en) | 2019-03-13 |
US20170125274A1 (en) | 2017-05-04 |
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