CN110783242A - 载置台装置、处理装置和载置台装置的操作方法 - Google Patents

载置台装置、处理装置和载置台装置的操作方法 Download PDF

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CN110783242A
CN110783242A CN201910675192.9A CN201910675192A CN110783242A CN 110783242 A CN110783242 A CN 110783242A CN 201910675192 A CN201910675192 A CN 201910675192A CN 110783242 A CN110783242 A CN 110783242A
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electrostatic chuck
mounting table
ground potential
back surface
substrate
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CN110783242B (zh
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元村祐己
曾根浩
加贺谷靖之
铃木直行
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Tokyo Electron Ltd
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Abstract

本发明提供载置台装置、处理装置和载置台装置的操作方法，相比于现有技术能够抑制由剩余电荷导致的基片的偏移和破损。上述载置台装置包括：静电吸盘，其正面形成有能够与基片的背面电接触的导电膜；迂回至上述静电吸盘的背面的导电部件，该导电部件与上述导电膜电连接；和移动部件，其经由连接部件与上述导电部件电连接，并能够在与接地电位连接的位置和不与接地电位连接的位置之间移动。

Description

载置台装置、处理装置和载置台装置的操作方法
技术领域
本发明涉及载置台装置、处理装置和载置台装置的操作方法。
背景技术
在使被静电吸盘的吸附面所吸附的基片离开静电吸盘时，当残留着由积蓄于静电吸盘、基片的剩余电荷产生的静电力的状态下使升降销上升时，有可能发生基片的偏移或破损的情况。因此，已知一种除去积蓄于静电吸盘、基片的剩余电荷的技术(例如，参照专利文献1、2)。
现有技术文献
专利文献
专利文献1：日本专利第5323317号公报
专利文献2：美国专利第9595464号说明书
发明内容
发明要解决的技术问题
本发明提供相比于现有技术能够抑制由剩余电荷导致的基片的偏移或破损的技术。
用于解决技术问题的技术方案
本发明的一个方式的载置台装置包括：静电吸盘，其正面形成有能够与基片的背面电接触的导电膜；迂回至上述静电吸盘的背面的导电部件，该导电部件与上述导电膜电连接；和移动部件，其经由连接部件与上述导电部件电连接，并能够在与接地电位连接的位置和不与接地电位连接的位置之间移动。
发明效果
依照本发明，相比于现有技术能够抑制由剩余电荷导致的基片的偏移或破损。
附图说明
图1是表示处理装置的结构例的截面图。
图2是表示载置台装置的一例的截面图。
图3是表示静电吸盘的一例的俯视图。
图4是放大地表示静电吸盘的一部分的立体图。
图5是放大地表示静电吸盘的一部分的俯视图。
图6是在静电吸盘的正面形成的导电膜与吸盘电极的位置关系的说明图。
图7是载置台装置的动作的说明图(1)。
图8是载置台装置的动作的说明图(2)。
图9是载置台装置的动作的说明图(3)。
图10是载置台装置的动作的说明图(4)。
附图标记说明
10 处理装置
12 处理容器
12c 突起部
12d 弹性体
100 载置台装置
110 载置台
114 静电吸盘
114a 吸盘电极
114f 密封带
114g 除电部
114h 接触部
120 导电部件
130 升降销组合件
134 轴
136 升降销
138 连接部件
140 按压部件
W 晶片。
具体实施方式
以下，参照附图，对本发明的非限定性的例示的实施方式进行说明。在附加的全部附图中，对于相同或者相应的零件或者部件标注相同或者相应的附图标记并省略重复的说明。
(处理装置)
关于本发明的一个实施方式的处理装置，举例说明通过从相对于作为基片的一例的半导体晶片(以下称为“晶片”。)的表面倾斜地配置的靶材对晶片辐射溅射颗粒而在晶片形成膜的溅射装置。图1是表示处理装置的结构例的截面图。
如图1所示，处理装置10具有处理容器12。处理容器12包括主体12a和盖体12b。主体12a具有大致圆筒形状，且上端开口。主体12a接地。主体12a的中心轴线与轴线C一致。盖体12b设置于主体12a上。主体12a的上端的开口由盖体12b、保持件30和保持件支承部32封闭。关于保持件30和保持件支承部32在后文中说明。
在处理容器12的内部设置有载置台装置100。载置台装置100包括载置台110。关于载置台装置100的详细内容在后文中说明。
载置台110与轴体22结合。轴体22从载置台110向下方延伸。轴体22通过主体12a的底部延伸至处理容器12的外部。在轴体22与主体12a的底部之间设置有用于气密地密封处理容器12的内部的密封机构23。轴体22的中心轴线与轴线C一致。
轴体22在处理容器12的外部与驱动装置24连接。驱动装置24使轴体22以该轴体22的中心轴线为旋转轴旋转并且使轴体22上下移动。当将晶片W载置在载置台110上时，驱动装置24将载置台110配置在处理容器12内的比较下方的位置。并且，由输送装置(未图示)输送到处理容器12内的晶片W被静电吸盘114吸附。之后，驱动装置24为了对晶片W成膜而使载置台110向上方移动。在载置台110向上方移动过程中，掩模26被配置在载置台110上。掩模26是具有大致环形形状的板状体。掩模26具有比晶片W的直径稍小的直径的开口26a。掩模26的外缘部26e向下方突出。
在处理容器12内设置有掩模支承体28。掩模支承体28悬挂于处理容器12。掩模支承体28为了不阻碍载置台110的上下移动而在载置台110移动的区域(沿着轴线C的区域)处开口。掩模支承体28具有支承部28a。支承部28a向上方开口，形成相对于轴线C在轴向上延伸的凹部。在由支承部28a形成的凹部能够配置掩模26的外缘部26e。由此，掩模26在与载置台110隔开间隔时由掩模支承体28支承。
处理装置10具有气体供给部29。气体供给部29对处理容器12的内部供给气体。另外，处理装置10具有保持件30和保持件支承部32。保持件支承部32为绝缘体，安装于盖体12b。保持件支承部32支承保持件30，并使保持件30与盖体12b电绝缘。保持件30保持靶材34。保持件30与电源36连接。当由电源36对保持件30施加电压时，在靶材34的附近产生电场。由此，从气体供给部29供给来的气体分解而生成离子。所生成的离子与靶材34碰撞，从靶材34释放出物质。所释放出的物质堆积在晶片W上。
处理装置10具有用于控制处理装置10整体的动作的计算机等控制部40。控制部40控制处理装置10的各部的动作。
控制部40与存储部连接，该存储部中保存有用于利用控制部40实现由处理装置10执行的各种处理的控制程序、用于根据处理条件在处理装置10的各部执行处理的各种程序。各种程序存储在存储介质中，能够保存在存储部中。存储介质可以是硬盘、半导体存储器，也可以是CD-ROM、DVD、闪存等移动式的存储介质。另外，也可以通过有线或者无线等通信方式从其它装置或主机向存储部适当地进行传送。
在上述的处理装置10中，首先，利用驱动装置24将载置台110配置在比成膜时靠下方的位置。接着，晶片W被输送装置(未图示)被载置在载置台110上，并被吸附到静电吸盘114。接着，利用驱动装置24使载置台110上升，将掩模26固定在载置台110。接着，利用驱动装置24使载置台110进一步上升，移动到成膜时的位置。接着，利用驱动装置24使载置台110旋转，并且从气体供给部29对处理容器12的内部供给气体，从电源36对保持件30施加电压。由此，从靶材34释放出的物质堆积在晶片W上，形成所希望的膜。
(载置台装置)
对图1的处理装置10中的载置台装置100的一例进行说明。图2是表示载置台装置100的一例的截面图。图2中，放大地表示设置有多个升降销中的一个升降销的部分。此外，对于设置有其它升降销的部分也是同样的。图3是表示静电吸盘114的一例的俯视图。图4是放大地表示静电吸盘114的一部分的立体图，放大地表示图3中的区域A。图5是放大地表示静电吸盘114的一部分的俯视图，放大地表示图3中的区域B。图6是在静电吸盘114的正面形成的导电膜与吸盘电极114a的位置关系的说明图。
如图2所示，载置台装置100具有载置台110、导电部件120、升降销组合件130和按压部件140。
载置台110具有底部112和静电吸盘114。
底部112具有大致圆盘形状。在底部112内埋入有加热器112a。加热器112a与电源112b连接。通过从电源112b对加热器112a供给电力，能够将载置台110调节为规定的温度。此外，加热器112a可以埋入在静电吸盘114内，也可以是能够粘贴在载置台110的片式加热器。此外，加热器112a也可以被分割为多个区域。在加热器112a被分割为多个区域的情况下，能够按所分割的每一个区域调节载置台110的温度。
静电吸盘114设置于底部112上。静电吸盘114具有大致圆盘形状，其中心大致位于轴线C上。静电吸盘114是能够将由导电膜形成的吸盘电极114a夹在一对电介质膜之间的部件。吸盘电极114a与电源114b连接。静电吸盘114利用从电源114b被施加电压而通过静电力将晶片W吸附并保持在静电吸盘114上。如图3所示，在静电吸盘114的正面形成有气孔114c、气体槽114d、衬垫114e、密封带114f、除电部114g和接触部114h。衬垫114e、密封带114f、除电部114g和接触部114h例如由TiN等的、导电膜形成。
气孔114c形成于静电吸盘114的吸附面。气孔114c与外部的导热气体供给源连接，将氦气(He)、氩气(Ar)等导热气体供给到气体槽114d。在一个实施方式中，在静电吸盘114的吸附面的中心附近形成有1个气孔114c。但是，也可以在静电吸盘114的吸附面形成多个气孔114c。
气体槽114d形成于静电吸盘114的吸附面。气体槽114d作为从气孔114c供给的导热气体的流路发挥作用。在一个实施方式中，气体槽114d形成于静电吸盘114的吸附面的整个面。由此，能够对静电吸盘114的整个面供给导热气体，故而能够提高被吸附在静电吸盘114的吸附面的晶片W的热均匀性。
衬垫114e形成于静电吸盘114的吸附面。衬垫114e形成为在晶片W被吸附到静电吸盘114的吸附面时能够与晶片W的背面接触。衬垫114e在晶片W被吸附到静电吸盘114的正面时使晶片发生滑动来减轻对晶片W的应力。在一个实施方式中，在静电吸盘114的吸附面的整个面形成有多个圆形的衬垫114e。
密封带114f沿着静电吸盘114的吸附面的外周形成于整周。密封带114f形成为在晶片W被吸附到静电吸盘114的吸附面时能够与晶片W的背面接触。密封带114f形成于插通孔114i的周围，该插通孔114i用于供形成于静电吸盘114的吸附面的升降销136插通。密封带114f在晶片W载置于静电吸盘114的吸附面时与晶片W的背面接触。由此，能够抑制被供给到吸附于静电吸盘114的吸附面的晶片W的背面与静电吸盘114的正面之间的空间的导热气体从空间泄露的情况。
除电部114g以从静电吸盘114的中心部沿着径向呈线状地延伸至外缘部的方式形成于静电吸盘114的吸附面上，在外缘部与密封带114f连接。除电部114g在晶片W载置于静电吸盘114的吸附面时与晶片W的背面接触。由此，静电吸盘114的中心部与外缘部成为相同电位。另外，在静电吸盘114为具有一对吸盘电极114a的双曲型的情况下，如图6所示，除电部114g优选形成于在俯视时与一个吸盘电极114a1重叠且与另一个吸盘电极114a2不重叠的位置。由此，能够抑制除电部114g对静电吸盘114的静电力造成影响。
接触部114h从形成于静电吸盘114的吸附面的密封带114f起横亘载置台110的外缘部地形成。接触部114h与导电部件120电连接。
导电部件120与形成于载置台110的正面的接触部114h电连接，并迂回至载置台110的背面。导电部件120由铝等导电材料形成。
升降销组合件130具有壳体132、轴134、升降销136和连接部件138。
壳体132具有圆筒形状，隔着陶瓷等绝缘部件固定于轴体22。由此，壳体132相对于处理容器12电浮置，并且与轴体22一体地升降。壳体132例如由不锈钢形成。
轴134为移动部件的一例，以相对于壳体132能够上下滑动的方式设置。轴134例如由不锈钢等导电材料形成。轴134能够在与接地电位连接的位置和不与接地电位连接的位置之间移动。在一个实施方式中，与接地电位连接的位置是与处理容器12电连接的位置，是与设置于处理容器12的底部的导电性的突起部12c的上端接触的位置。另一方面，不与接地电位连接的位置是与处理容器12电绝缘的位置，是与设置于处理容器12的底部的导电性的突起部12c的上端隔开间隔的位置。此外，在图2中表示了轴134与突起部12c的上端接触的状态。从能够使载置台110下降时的行程(stroke)变长的观点考虑，优选突起部12c因弹性体12d(例如螺旋弹簧)的弹性变形而能够上下移动。在该情况下，因为优选连接部件138完全压缩时载置台110与升降销136的位置关系被固定，所以将使突起部12c移动的弹性体的反作用力设定为比连接部件138的反作用力大。
升降销136安装于轴134的上端。由此，升降销136与轴134一体地升降。升降销136由钛(Ti)等导电材料形成。升降销136通过轴134被突起部12c按压而与轴134一体地向上方移动。由此，升降销136能够从静电吸盘114的吸附面的下方的位置至上方的位置进行升降。当升降销136向上方移动而其上端与晶片W的背面接触时，积蓄于静电吸盘114、晶片W的剩余电荷经由升降销136、轴134、突起部12c和处理容器12被除去。另外，升降销136的上端移动到比静电吸盘114的吸附面靠上方处，从而由升降销136的上端支承晶片W，晶片W与静电吸盘114的吸附面隔开间隔。
连接部件138由不锈钢等导电材料形成。连接部件138的一端固定于轴134的上端，另一端固定于导电部件120。由此，轴134与导电部件120通过连接部件138而一直电连接，成为相同电位的状态。在一个实施方式中，连接部件138为螺旋弹簧。由此，即使轴134与导电部件120之间的相对位置变化，也能够维持轴134与导电部件120电连接的状态。此外，连接部件138也可以为例如电线。
按压部件140将导电部件120按压到形成于静电吸盘114的接触部114h。由此，能够实现部件公差的吸收，并且能够施加一定的接触力。在一个实施方式中，按压部件140例如包括弹簧，利用弹簧的弹性力将导电部件120按压在接触部114h。
(载置台装置的操作方法)
关于上述处理装置10的载置台装置100的操作方法，举例说明由升降销136抬起吸附于静电吸盘114的吸附面的晶片W以使该晶片W与吸附面隔开间隔时的动作。
图7至图10是载置台装置100的动作的说明图。图7表示载置台110位于使晶片W吸附到静电吸盘114的吸附面的位置时的载置台装置100的各部的位置关系。图8表示在轴134的下端与突起部12c的上端接触的位置时的载置台装置100的各部的位置关系。图9表示在升降销136与晶片W的背面接触的位置时的载置台装置100的各部的位置关系。图10表示在由升降销136使晶片W与静电吸盘114的吸附面隔开间隔并支承该晶片W的位置时的载置台装置100的各部的位置关系。此外，在图7～图10中的箭头L表示静电吸盘114与处理容器12之间的电连接状态。另外，在图7～图10中，表示没有将晶片W载置在载置台110而使载置台装置100动作时的状态。
首先，如图7所示，在载置台110位于使晶片W吸附到静电吸盘114的吸附面的位置时，升降销136的上端从静电吸盘114的吸附面引入，并且轴134的下端与突起部12c的上端隔开间隔。因此，升降销组合件130和静电吸盘114没有接地。
接着，如图8所示，使载置台110下降而使轴134与突起部12c接触。由此，静电吸盘114(密封带114f、除电部114g和接触部114h)、导电部件120、连接部件138、轴134、突起部12c和处理容器12电连接。因此，晶片W的背面和静电吸盘114经由处理容器12接地。其结果是，积蓄于晶片W和静电吸盘114的剩余电荷经由导电部件120、连接部件138、轴134、突起部12c和处理容器12而被除去。
接着，如图9所示，通过使载置台110进一步下降，以使升降销136的上端与静电吸盘114的吸附面为相同高度或者从静电吸盘114的吸附面稍微突出而与晶片W的背面接触。由此，积蓄于晶片W的剩余电荷经由升降销136、轴134、突起部12c和处理容器12而被除去。
接着，如图10所示，通过使载置台110进一步下降，而使升降销136从静电吸盘114的吸附面进一步突出地支承晶片W的背面，使得晶片W与静电吸盘114的吸附面隔开间隔。这时，由于晶片W和静电吸盘114被除去了静电，因此能够抑制晶片W的偏移和破损。
如以上所说明的那样，本发明的一个实施方式中，在由升降销136抬起晶片W前，使晶片W的背面和静电吸盘114的吸附面接地。由此，能够在由升降销136抬起晶片W前，将积蓄于晶片W和静电吸盘114的剩余电荷除去。因此，能够抑制抬起晶片W时的晶片W的偏移和破损。另外，通过使轴134与突起部12c接触以使晶片W的背面和静电吸盘114的吸附面接地，从而积蓄于晶片W和静电吸盘114的剩余电荷被除去，因此不需要另外设置除去静电用电路或开关装置/电路等。即，能够通过简单的结构将积蓄于晶片W和静电吸盘114的剩余电荷除去。
另外，在本发明的一个实施方式中，在对吸盘电极114a施加电压以使晶片W吸附到静电吸盘114的吸附面时，轴134与突起部12c隔开间隔。由此，静电吸盘114和升降销组合件130不接地，而成为电浮置状态。因此，能够防止对静电吸盘114的静电力造成影响。
另外，在本发明的一个实施方式中，在静电吸盘114的吸附面设置有除电部114g，该除电部114g从静电吸盘114的中心部沿着径向呈线状地延伸至外缘部而形成，在外缘部与密封带114f连接。由此，积蓄于在晶片W的背面的中心附近的剩余电荷能够被除电部114g除去，因此能够对晶片W的整个背面有效地消除静电，并且能够有效地消除残留于静电吸盘114的正面的电荷。
另外，在本发明的一个实施方式中，在俯视时，除电部114g形成在与双曲型的吸盘电极114a的一个吸盘电极114a重叠且与另一个吸盘电极114a不重叠的位置。由此，能够抑制设置除电部114g而导致的对静电吸盘114的静电力造成的影响。
另外，在本发明的一个实施方式中，设置有将导电部件120按压到静电吸盘114的接触部114h的按压部件140。由此，能够实现部件公差的吸收，并且能够施加一定的接触力。
本发明所公开的实施方式的全部内容均为例示，不应理解为限定性的内容。上述的实施方式只要在不脱离附加的权利要求及其主旨的情况下，能够以各种方式进行省略、置换或变更。

Claims (12)

1.一种载置台装置，其特征在于，包括：
静电吸盘，其正面形成有能够与基片的背面电接触的导电膜；
迂回至所述静电吸盘的背面的导电部件，该导电部件与所述导电膜电连接；和
移动部件，其经由连接部件与所述导电部件电连接，并能够在与接地电位连接的位置和不与接地电位连接的位置之间移动。
2.如权利要求1所述的载置台装置，其特征在于：
所述载置台装置设置于处理容器内，
所述与接地电位连接的位置是与所述处理容器电连接的位置，
所述不与接地电位连接的位置是与所述处理容器电绝缘的位置。
3.如权利要求1或2所述的载置台装置，其特征在于：
所述导电膜在所述静电吸盘的吸附面从所述静电吸盘的中心部沿着径向呈线状地延伸至外缘部而形成。
4.如权利要求1～3中任一项所述的载置台装置，其特征在于：
所述静电吸盘为具有一对吸盘电极的双曲型，
所述导电膜形成于俯视时与一个吸盘电极重叠且与另一个吸盘电极不重叠的位置。
5.如权利要求1～4中任一项所述的载置台装置，其特征在于：
包括将所述导电部件按压到所述导电膜的按压部件。
6.如权利要求1～5中任一项所述的载置台装置，其特征在于：
在所述移动部件安装有能够与所述基片的背面接触的升降销，
所述移动部件在与所述接地电位连接的位置所述升降销与所述基片的背面接触，所述移动部件在不与所述接地电位连接的位置所述升降销与所述基片的背面隔开间隔。
7.如权利要求1～6中任一项所述的载置台装置，其特征在于：
所述连接部件为弹性体。
8.如权利要求7所述的载置台装置，其特征在于：
所述弹性体为螺旋弹簧。
9.一种处理装置，其特征在于，包括：
处理容器；和
设置于所述处理容器内的载置台装置，其能够载置基片，
所述载置台装置包括：
静电吸盘，其正面形成有能够与基片的背面电接触的导电膜；
迂回至所述静电吸盘的背面的导电部件，该导电部件与所述导电膜电连接；和
移动部件，其经由连接部件与所述导电部件电连接，并能够在与接地电位连接的位置和不与接地电位连接的位置之间移动。
10.如权利要求9所述的处理装置，其特征在于：
包括导电性的突起部，其设置于所述处理容器的底部并能够上下移动，
所述与接地电位连接的位置是所述移动部件与所述突起部接触的位置，
所述不与接地电位连接的位置是所述移动部件与所述突起部隔开间隔的位置。
11.如权利要求10所述的处理装置，其特征在于：
所述连接部件由第一弹性体形成，
所述突起部因第二弹性体的弹性变形而能够上下移动，
所述第二弹性体的反作用力比所述第一弹性体的反作用力大。
12.一种载置台装置的操作方法，其特征在于：
所述载置台装置包括：
静电吸盘，其正面形成有能够与基片的背面电接触的导电膜；
迂回至所述静电吸盘的背面的导电部件，该导电部件与所述导电膜电连接；
移动部件，其经由连接部件与所述导电部件电连接，并能够在与接地电位连接的位置和不与接地电位连接的位置之间移动；和
安装于所述移动部件的升降销，其能够与所述基片的背面接触，
所述载置台装置的操作方法中，在使所述移动部件移动至与所述接地电位连接的位置后，使所述升降销与所述基片的背面接触。
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