TW201906028A - 半導體封裝件的製造方法 - Google Patents

半導體封裝件的製造方法

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TW201906028A
TW201906028A TW107121993A TW107121993A TW201906028A TW 201906028 A TW201906028 A TW 201906028A TW 107121993 A TW107121993 A TW 107121993A TW 107121993 A TW107121993 A TW 107121993A TW 201906028 A TW201906028 A TW 201906028A
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package
semiconductor
holding
substrate
sealant
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TW107121993A
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TWI752239B (zh
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張秉得
金永奭
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日商迪思科股份有限公司
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Abstract

[課題]讓厚度不同的多個晶片的散熱效果均一化。[解決手段]一種安裝厚度不同的多個半導體晶片的半導體封裝件的製造方法，其中，藉由保持膠帶以保持利用密封劑一次密封配線基材上的多個半導體晶片的封裝基板的背面，利用成型的整形磨石以薄化樹脂層，利用分割手段以沿著分割預定線切入至保持膠帶中，藉此將封裝基板分割成一個個半導體封裝件。在整形磨石的外周面形成段差，透過整形磨石的段差使各晶片上表面至封裝件上表面的厚度形成為相同。

Description

半導體封裝件的製造方法
本發明關於一種半導體封裝件的製造方法，利用密封劑以密封厚度相異的晶片。
以往，開發出如同SIP（System In Package，系統級封裝）等的將多個晶片密封在1個封裝件內的封裝技術。在這樣的封裝技術中，配線基板被分割預定線劃分，多個晶片各別安裝在被分割預定線劃分的各區域中，利用封膜樹脂一次將多個晶片密封，藉此來製作封裝基板。然後，沿著分割預定線切割封裝基板，藉此分割成一個個封裝有多個晶片的半導體封裝件（例如，參考專利文獻1）。此外近年來，作為封裝基板，如扇出型／晶圓級封裝等的在重佈層上安裝晶片的技術也已為習知。 [習知技術文獻] [專利文獻]
[專利文獻1] 日本特開2001-023936號公報
[發明所欲解決的課題] 然而，厚度不同的多個晶片以平放狀態安裝在配線基板或重佈層等的配線基材上時，若利用封膜樹脂一次將多個晶片密封，每個晶片的封膜樹脂的厚度則會產生偏差。因此，存在1個封裝件內晶片的散熱效果相異的問題。
本發明是鑒於上述觀點所完成者，其目的之一在於提供一種半導體封裝件的製造方法，能夠讓厚度不同的多個晶片的散熱效果均一化。
[解決課題的技術手段] 本發明一態樣的半導體封裝件的製造方法，為在單體化的配線基材上連接厚度相異的多個晶片並利用密封劑密封而成之半導體封裝件的製造方法，具備：保持步驟，利用保持膠帶或者保持治具以保持封裝基板的該配線基材側，該封裝基板為在該配線基材上形成的被交叉的分割預定線劃分的區域中配設該些晶片並利用該密封劑一次密封；段差形成步驟，以散熱性成為相同的方式，利用形成對應各晶片而薄化該密封劑至預定厚度的段差的整形磨石，以在該密封劑上表面形成段差；以及分割步驟，利用分割手段以沿著該分割預定線切入至該保持膠帶中或者該保持治具內，分割成一個個半導體封裝件。
若根據此構成，利用附有段差的整形磨石以研削封裝基板的密封劑上表面，使各晶片上表面至密封劑上表面的厚度一致。因此，將封裝基板分割成一個個半導體封裝件，藉此能夠讓1個封裝件內厚度不同的多個晶片的散熱效果均一化。此外，由於透過整形磨石能夠使多個晶片每一個的密封劑的厚度一致，因此能夠透過樹脂層一次密封配線基材上的多個晶片而容易製作封裝基板。再者，對於使各晶片上表面至密封劑上表面的厚度一致，並不限於樹脂的厚度要完全一致的情況。只要散熱性接近相同，各晶片上表面至密封劑上表面的樹脂的厚度也可產生一些偏差。
在本發明一態樣的半導體封裝件的製造方法中，該整形磨石及該分割手段為加工工具，且該加工工具具備：圓環形狀的基台，於中心部具有安裝至旋轉主軸的安裝孔；以及多個圓環突起，在該基台的外周面整面向著延續外周方向平行地突出，其中，該些圓環突起之間在將該圓環突起切入至該保持膠帶中或者保持治具內時，形成對應各晶片而薄化該密封劑至預定厚度的段差，並且使用該加工工具，進行將該圓環突起定位在該分割預定線並切入至該保持膠帶中或者該保持治具內的加工，藉此同時實施該段差形成步驟及該分割步驟。
[發明功效] 根據本發明，透過整形磨石的段差使各晶片上表面至密封劑上表面的厚度一致，藉此能夠讓厚度不同的多個晶片的散熱效果均一化。
以下，參考隨附圖式，對本實施方式的半導體封裝件的製造方法作說明。圖1為本實施方式的半導體封裝件的剖面示意圖。圖2為比較例的半導體封裝件的說明圖。再者，以下實施方式為僅表示一例者，可在各步驟間具備其他步驟，也可將步驟的順序適當交換。
如圖1所示，半導體封裝件10為封裝多個半導體晶片（晶片）21a、21b的SIP（System In Package，系統級封裝）等的半導體裝置，透過樹脂層（密封劑）12保護半導體晶片21a、21b不受外部環境影響。半導體封裝件10為在配線基板（配線基材）11的上表面安裝的半導體晶片21a、21b被樹脂層12密封，且在配線基板11的下表面配設凸塊13。在配線基板11上形成有包含連接半導體晶片21a、21b的電極或接地線的各種配線。
半導體晶片21a、21b是將半導體晶圓單體化為每個元件而形成的。此外，半導體晶片21a、21b是以相異的厚度形成，並以平放狀態安裝在配線基板11的預定區域中。封裝件裡內含多個半導體晶片21a、21b且半導體晶片21a、21b彼此連接，藉此透過單一封裝件來整合多個半導體晶片21a、21b。在這樣的半導體封裝件10中，除了不受衝擊或異物等的外部環境影響的半導體晶片21a、21b的保護以外，還要求半導體晶片21a、21b中產生的熱逸散至外部的散熱性。
此外，通常如圖2的比較例所示，配線基板91上的半導體晶片94a、94b一次被樹脂層92密封，且半導體封裝件90的封裝件上表面93為平坦形成。因此，各半導體晶片94a、94b的晶片上表面95a、95b至封裝件上表面93的樹脂層92的厚度產生差異。在薄型半導體晶片94a上層積較厚的樹脂層92，而在厚型的半導體晶片94b上層積較薄的樹脂層92。因此，相較厚型半導體晶片94a，薄型半導體晶片94b的散熱性更低，且半導體封裝件90內半導體晶片94a、94b的散熱性產生不均勻。
因此，如圖1所示，本實施方式中在半導體封裝件10的封裝件上表面25a、25b形成段差27，使厚度不同的半導體晶片21a、21b其晶片上表面22a、22b至封裝件上表面25a、25b的厚度一致。藉此，不論半導體晶片21a、21b的厚度，皆能夠讓封裝件內各半導體晶片21a、21b的散熱效果均一化。此時，利用附有段差45的整形磨石41（參考圖4A）以研削樹脂層12，藉此能夠配合各半導體晶片21a、21b的厚度，部分地調整半導體封裝件10的樹脂層12的厚度。
以下，參考圖3及圖4，對本實施方式的半導體封裝件的製造方法作說明。圖3及圖4為本實施方式的半導體封裝件的製造方法的說明圖。再者，圖3A為安裝步驟，圖3B為基板製作步驟，以及圖3C為保持步驟的各別表示一例的圖。此外，圖4A及圖4B為段差形成步驟，圖4C為分割步驟的各別表示一例的圖。
如圖3A所示，首先實施安裝步驟。在安裝步驟中，配線基板11的表面被交叉的分割預定線劃分成格子狀，劃分的各區域中各別安裝多個半導體晶片21a、21b。在此情況下，配線基板11上的各區域中是以平放狀態配設厚度相異的2種半導體晶片21a、21b，且半導體晶片21a、21b在配線基板11上是以每一種類在一方向（紙面內側）上成列的方式作排列。再者，厚度相異的半導體晶片21a、21b可具有相同功能，也可具有相異功能。
配線基板11內形成有接地線等的配線，且在配線基板11的下表面配設凸塊13。引線14的一端連接至半導體晶片21a、21b上表面的電極，且引線14的另一端連接至配線基板11表面的電極16。經由配線基板11的配線而使半導體晶片21a、21b彼此連接，藉此來建構具備多種功能的系統。再者，安裝步驟中並不限於引線接合，也可實施將半導體晶片21a、21b下表面的電極直接連接至配線基板11表面的電極的覆晶接合。
如圖3B所示，實施安裝步驟之後實施基板製作步驟。在基板製作步驟中，在安裝有多個半導體晶片21a、21b的配線基板11的表面側供給密封劑17，各半導體晶片21a、21b一次被密封劑17密封並製作出封裝基板15（參考圖3C）。在此情況下，配線基板11的下表面保持在保持治具（未圖示）上，以覆蓋配線基板11上表面的方式配置模板31。在模板31的上壁開設注入口32，在注入口32的上方定位有密封劑17的供給噴嘴33。
接著，由供給噴嘴33經由注入口32，密封劑17供給至配線基板11的上表面並密封半導體晶片21a、21b。在此狀態下，密封劑17利用加熱或乾燥來固化，製作出在配線基板11上表面形成樹脂層12（參考圖3C）的封裝基板15。再者，密封劑17中使用具有固化性的物質，例如，能夠自環氧樹脂、矽樹脂、聚氨酯樹脂、不飽和聚酯樹脂、丙烯酸聚氨酯樹脂、或聚醯亞胺樹脂等中選擇。此外，密封劑17並不限於液狀，也可使用片狀、粉狀的樹脂。如此一來，配線基板11上的多個半導體晶片21a、21b被一次密封。再者，預先準備封裝基板15的情況下，可省略安裝步驟、及基板製作步驟。
如圖3C所示，實施基板製作步驟之後實施保持步驟。在保持步驟中，以閉塞環狀框架（未圖式）的中央的方式貼附保持膠帶35，利用此保持膠帶35以保持封裝基板15的配線基板11側。在此情況下，封裝基板15的凸塊13深入保持膠帶35的黏著層，封裝基板15透過保持膠帶35在環狀框上受到良好支撐。再者，在保持步驟中，可以使用從上表面觀看為圓形狀的環狀框架，也可使用從上表面觀看為四角形狀的環狀框架。
如圖4A所示，實施保持步驟之後實施段差形成步驟。在段差形成步驟中，對應半導體封裝件10（參考圖4C）的封裝件上表面25a、25b的段差形狀的成型的整形磨石41安裝在旋轉主軸的前端。整形磨石41形成為由大徑部分43及小徑部分44組成的圓筒狀，在大徑部分43與小徑部分44的分界形成段差45。大徑部分43相較小徑部分44僅突出半導體晶片21a、21b的厚度差。在整形磨石41的外周面電鍍金剛石等的磨粒而形成磨粒層46。
封裝基板15的配線基板11側透過保持膠帶35保持在卡盤台（未圖示）上時，整形磨石41的段差45對位在半導體晶片21a、21b之間，在封裝基板15的外側下降至樹脂層12的厚度方向中的深度。接著，封裝基板15對於整形磨石41在半導體晶片21a、21b的排列方向（紙面內側）上加工進給，薄化半導體晶片21a、21b的晶片上表面22a、22b與封裝基板15的基板上表面18之間的樹脂層12。藉此，在卡盤台上的封裝基板15的樹脂層12被整形磨石41切入而薄化了封裝基板15。
利用整形磨石41的大徑部分43較深地削去薄型半導體晶片21a上的樹脂層12，並且利用整形磨石41的小徑部分44較淺地削去厚型半導體晶片21b上的樹脂層12。由於整形磨石41的大徑部分43相較小徑部分44僅突出半導體晶片21a、21b的厚度差，因此使各半導體晶片21a、21b的晶片上表面22a、22b至研削後的樹脂層上表面（封裝件上表面）25a、25b的厚度一致。如此一來，利用成型的整形磨石41以切入樹脂層12，藉此根據整形磨石41的段差45並對應各半導體晶片21a、21b來薄化樹脂層12至預定的厚度，進而形成段差27。
如圖4B所示，排成一列的半導體晶片21a、21b上的樹脂層12被研削時，整形磨石41的段差45對位在隔著分割預定線而相鄰的成列半導體晶片21a、21b之間，並研削樹脂層12。透過重複此動作，在封裝基板15的基板上表面18形成多列的段差27，並使封裝基板15內全部的半導體晶片21a、21b上的樹脂層12有相同厚度。再者，整形磨石41對於樹脂層12的切入量，調整為半導體晶片21a、21b透過樹脂層12而能得到足夠散熱效果的深度。
如圖4C所示，在段差形成步驟之後實施分割步驟。在分割步驟中，沿著分割預定線將封裝基板15分割成一個個半導體封裝件10。利用接合劑以固定金剛石磨粒並成形為圓板狀的切割刀片47安裝在旋轉主軸（未圖示），封裝基板15的配線基板11側透過保持膠帶35保持在卡盤台（未圖示）上。切割刀片47對於封裝基板15的分割預定線進行定位，在封裝基板15的外側切割刀片47下降至能夠切入至保持膠帶35中的深度。
接著，封裝基板15對於切割刀片47而沿著分割預定線在水平方向上切割進給。沿著一條分割預定線完全切斷封裝基板15時，切割刀片47對於相鄰的分割預定線進行對位並完全切斷封裝基板15。透過重複此切斷動作，封裝基板15沿著分割預定線被分割成一個個半導體封裝件10。如此一來，製造出在配線基板11上連接厚度相異的半導體晶片21a、21b，並利用樹脂層12密封的半導體封裝件10。
如以上所述，若根據本實施方式的半導體封裝件10的製造方法，利用附有段差45的整形磨石41以研削封裝基板15的基板上表面18，則使晶片上表面22a、22b算起的樹脂層12的厚度一致。因此，將封裝基板15分割成一個個半導體封裝件10，藉此能夠讓1個封裝件內厚度不同的多個半導體晶片21a、21b的散熱效果均一化。此外，由於透過整形磨石41能夠使半導體晶片21a、21b每一個樹脂層12的厚度一致，因此能夠透過樹脂層12一次密封配線基板11上的多個半導體晶片21a、21b而容易製作封裝基板15。
再者，在本實施方式中，雖然是段差形成步驟之後實施分割步驟的構成，但並不限定於此構成。段差形成步驟及分割步驟只要是在保持步驟之後實施即可，例如，也可在分割步驟之後實施段差形成步驟。此外，也可透過使用專用的加工工具的加工步驟來同時實施段差形成步驟及分割步驟。在此，參考圖5，對同時實施段差形成步驟及分割步驟的加工步驟的一例作說明。
如圖5所示，在加工步驟中，加工工具51的圓環形狀的基台52安裝在旋轉主軸的前端。在加工工具51的基台52於中心部具有安裝至旋轉主軸的安裝孔，在基台52的外周面整面一對圓環突起56向著延續外周方向平行地突出。一對圓環突起56之間形成為由大徑部分53及小徑部分54組成的圓筒狀，在大徑部分53與小徑部分54的分界形成段差55。大徑部分53相較小徑部分54僅突出半導體晶片21a、21b的厚度差，在加工工具51的外周面電鍍金剛石等的磨粒而形成磨粒層57。
封裝基板15的配線基板11側透過保持膠帶35保持在卡盤台（未圖示）上時，加工工具51的一對圓環突起56對位在分割預定線，且加工工具51的段差55定位在半導體晶片21a、21b之間。此外，在封裝基板15的外側，加工工具51下降至利用圓環突起56而能夠切入至保持膠帶35中，並且利用大徑部分53及小徑部分54而能夠切入至基板上表面18的深度。接著，封裝基板15對於加工工具51在水平方向上加工進給，沿著分割預定線加工封裝基板15。
透過一對圓環突起56分割封裝基板15，並且利用一對圓環突起56之間的大徑部分53及小徑部分54以研削封裝基板15的樹脂層12。利用加工工具51的大徑部分53較深地削去薄型半導體晶片21a上的樹脂層12，並且利用加工工具51的小徑部分54較淺地削去厚型半導體晶片21b上的樹脂層12，使各半導體晶片21a、21b的晶片上表面22a、22b至封裝件上表面25a、25b的厚度一致。將圓環突起56切入至保持膠帶35，藉此根據加工工具51的段差55並對應各半導體晶片21a、21b來薄化樹脂層12至預定的厚度。
即使這樣的加工步驟，使各晶片上表面22a、22b至封裝件上表面25a、25b的厚度一致，也能夠讓1個封裝件內厚度不同的多個半導體晶片21a、21b的散熱效果均一化。此外，在加工步驟中，由於同時實施了段差形成步驟及分割步驟，因此變得能夠減少作業工時。再者，此處雖然是一對圓環突起56從基台52的外周突出的構成，但並不限定於此構成。只要是從基台的外周突出多個圓環突起即可，例如可為3個以上的圓環突起從基台的外周突出。
此外，在本實施方式中，雖然是薄化半導體晶片的晶片上表面至封裝件上表面的樹脂層的厚度來提高散熱性的構成，但並不限定於此構成。也可薄化彼此相鄰的半導體晶片間的樹脂層，以更加提高散熱性。在此情況下，也可透過使用加工工具的變形例的加工步驟，同時實施段差形成步驟、分割步驟、及溝形成步驟。在此，參考圖6，對加工步驟的變形例作說明。
如圖6的變形例所示，在徑方向外側一對圓環突起66從加工工具61的圓筒狀的基台62的兩端突出，並且在一對圓環突起66之間中間突起67從基台62突出。中間突起67相較圓環突起66控制了突出量，以突起寬幅朝向外側變窄的方式形成從剖面觀看為梯形狀。一側的圓環突起66與中間突起67之間成為圓筒的大徑部分63，並且一側的圓環突起66與大徑部分63之間形成斜面。此外，另一側的圓環突起66與中間突起67之間成為圓筒的小徑部分64，並且在另一側的圓環突起66與小徑部分64形成斜面。大徑部分63相較小徑部分64僅突出半導體晶片21a、21b的厚度差，在加工工具61的外周面電鍍金剛石等的磨粒而形成磨粒層68。
安裝基板15的配線基板11側透過保持膠帶35保持在卡盤台（未圖示）上時，加工工具61的一對圓環突起66對位在分割預定線，並且加工工具61的中間突起67定位在半導體晶片21a、21b之間。此外，在封裝基板15的外側，加工工具61下降至利用圓環突起66而能夠切入至保持膠帶35中，並且利用大徑部分63及小徑部分64而能夠切入基板上表面18的深度。接著，封裝基板15對於加工工具61在水平方向上加工進給，封裝基板15沿著分割預定線加工。
透過一對圓環突起66分割封裝基板15，並且利用一對圓環突起66之間的大徑部分63及小徑部分64以研削封裝基板15的樹脂層12。利用加工工具61的大徑部分63較深地削去薄型半導體晶片21a上的樹脂層12，並且利用加工工具61的小徑部分64較淺地削去厚型半導體晶片21b上的樹脂層12，使各半導體晶片21a、21b的晶片上表面22a、22b至封裝件上表面25a、25b的厚度一致。進一步地，利用中間突起67以切入半導體晶片21a、21b間的樹脂層12，在半導體晶片21a、21b間的樹脂層12形成溝29。
即使如此變形例的加工步驟，使各晶片上表面22a、22b至封裝件上表面25a、25b的厚度一致，也能夠讓1個封裝件內厚度不同的多個半導體晶片21a、21b的散熱效果均一化。此外，在加工步驟中，由於同時實施了段差形成步驟及分割步驟，因此能夠減少作業工時。進一步地，由於中間突起67的側面及圓環突起66的側面是透過傾斜來避開引線14，因此防止了引線14被中間突起67及圓環突起66切斷。在此，雖然同時實施了段差形成步驟、分割步驟、及溝形成步驟，但可分別各自實施，也可同時實施任何2個步驟。
此外，在本實施方式中，雖然例示在配線基板上安裝2個半導體晶片的半導體封裝件，但並不限於此構成。只要是在配線基板上安裝多個半導體晶片即可，例如，如圖7A的變形例所示，半導體封裝件70可在配線基板71上安裝3個半導體晶片72a－72c。此外，如圖7B的變形例所示，半導體封裝件75可在配線基板76上安裝層積多個晶片的層積晶片77a、77b。
此外，在本實施方式中，雖然對製造半導體晶片透過引線而引線接合至配線基板的電極的半導體封裝件的構成作說明，但並不限於此構成。如圖8的變形例所示，半導體封裝件80可為半導體晶片82a、82b直接連接至配線基板81的電極並作覆晶接合。
此外，在本實施方式中，雖然分割步驟為使用切割刀片作為分割手段實施的，但並不限於此構成。分割步驟只要是將封裝基板切割成一個個半導體封裝件的構成即可。例如，可使用雷射燒蝕用的加工床作為分割手段，透過燒蝕加工以分割封裝基板。再者，雷射燒蝕是指雷射光線的照射強度到達預定的加工闕值時，在固體表面變換為電子、熱、光化學以及力學性能量，其結果急遽地釋放中性原子、分子、正負離子、自由基、團簇、電子、及光，進而蝕刻固體表面的現象。
此外，在本實施方式中，雖然是基板的背面受保持膠帶保持並實施各步驟的構成，但並不限於此構成。例如，可在基板的背面受保持治具保持的狀態下實施各步驟。此外，保持治具只要是能夠保持基板即可，例如，可由卡盤台或座盤構成。
此外，在上述實施方式中，雖然是在配線基材上安裝半導體晶片作為晶片的構成，但並不限於此構成。晶片只要是在配線基材上安裝的晶片零件即可，例如，可由電容器或其他晶片零件構成。
此外，在上述的實施方式中，雖然是在配線基板上安裝厚度相異的多個晶片的構成，但並不限於此構成。封裝基板可為所謂扇出型晶圓級封裝，也可為在重佈層上安裝厚度相異的多個晶片的構成。因此，配線基材並不限於PCB基板等的配線基板，也可為扇出型晶圓級封裝的重佈層。
此外，在上述實施方式中，雖然是讓各晶片的晶片上表面至研削後的樹脂層上表面（封裝件上表面）的厚度為相同的方式，在整形磨石上形成段差的構成，但並不限於此構成。整形磨石上的段差只要是讓各晶片的散熱性成為相同的方式在整形磨石上形成段差即可。因此，並不限於各晶片的晶片上表面至研削後的樹脂層上表面（封裝件上表面）的厚度要完全相同的構成，只要散熱性接近相同，厚度也可產生一些偏差。
此外，半導體封裝件並不限於用於行動電話等的行動通訊設備，也可用於相機等的其他電子設備。
此外，雖然說明了本實施的形態及變形例，但也可將上述各實施的形態及變形例全部或部分地組合，作為本發明的其他實施方式。
此外，本發明的實施方式並不限於上述各實施的形態及變形例，只要在不偏離本發明技術思想的要旨的範圍內，則可以作各種變更、置換、及變形。進一步地，只要透過技術的進步或推導的另一技術而能夠用另一方法來實現本發明的技術思想，則可使用該方法實施。因此，申請專利範圍係涵蓋能夠包含本發明的技術思想的範圍內的全部實施方式。
此外，在本實施方式中，雖然對將本發明適用於半導體封裝件的製造方法作說明，但也能夠適用於將多個晶片封裝的其他封裝零件的製造方法。 [產業上的可利用性]
如以上說明，本發明具有能夠讓厚度不同的多個晶片的散熱效果均一化的功效，特別是對用於行動通訊設備的半導體封裝件的製造方法有效用。
10‧‧‧半導體封裝件
11‧‧‧配線基板（配線基材）
12‧‧‧樹脂層
15‧‧‧封裝基板
17‧‧‧密封劑
21a、21b‧‧‧半導體晶片
22a、22b‧‧‧晶片上表面
25a、25b‧‧‧封裝件上表面（樹脂層上表面）
27‧‧‧封裝件上表面的段差
35‧‧‧保持膠帶
41‧‧‧整形磨石
45‧‧‧整形磨石的段差
47‧‧‧切割刀片（分割手段）
51‧‧‧加工工具
52‧‧‧基台
53‧‧‧大徑部分
54‧‧‧小徑部分
55‧‧‧加工工具的段差
56‧‧‧圓環突起
圖1為本實施方式的半導體封裝件的剖面示意圖。 圖2為比較例的半導體封裝件的剖面示意圖。 圖3為本實施方式的半導體封裝件的製造方法的說明圖。 圖4為本實施方式的半導體封裝件的製造方法的說明圖。 圖5為表示其他實施方式的加工步驟的一例的圖。 圖6為表示其他實施方式的加工步驟的變形例的圖。 圖7為表示半導體封裝件的變形例的圖。 圖8為表示半導體封裝件的其他變形例的圖。

Claims (2)

  1. 一種半導體封裝件的製造方法，該半導體封裝件是在單體化的配線基材上連接厚度相異的多個晶片並利用密封劑密封而成，該製造方法具備： 保持步驟，利用保持膠帶或者保持治具以保持封裝基板的該配線基材側，該封裝基板為在該配線基材上形成的被交叉的分割預定線劃分的區域中配設該些晶片，並利用該密封劑一次密封； 段差形成步驟，以散熱性成為相同的方式，利用形成對應各晶片而薄化該密封劑至預定厚度的段差的整形磨石，以在該密封劑上表面形成段差；以及 分割步驟，利用分割手段以沿著該分割預定線切入至該保持膠帶中或者該保持治具內，分割成一個個半導體封裝件。
  2. 如申請專利範圍第1項所述之半導體封裝件的製造方法，其中， 該整形磨石及該分割手段為加工工具，且該加工工具具備： 圓環形狀的基台，於中心部具有安裝至旋轉主軸的安裝孔；以及 多個圓環突起，在該基台的外周面整面向著延續外周方向平行地突起， 且該些圓環突起之間在將該圓環突起切入至該保持膠帶中或者保持治具內時，形成對應各晶片而薄化該密封劑至預定厚度的段差， 使用該加工工具，進行將該圓環突起定位在該分割預定線並且切入至該保持膠帶中或者該保持治具內的加工，藉此同時實施該段差形成步驟及該分割步驟。
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