JP5432045B2 - 半導体発光装置の製造方法 - Google Patents
半導体発光装置の製造方法 Download PDFInfo
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- JP5432045B2 JP5432045B2 JP2010092435A JP2010092435A JP5432045B2 JP 5432045 B2 JP5432045 B2 JP 5432045B2 JP 2010092435 A JP2010092435 A JP 2010092435A JP 2010092435 A JP2010092435 A JP 2010092435A JP 5432045 B2 JP5432045 B2 JP 5432045B2
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- 239000004065 semiconductor Substances 0.000 title claims description 33
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 142
- 239000002184 metal Substances 0.000 claims description 142
- 229920005989 resin Polymers 0.000 claims description 41
- 239000011347 resin Substances 0.000 claims description 41
- 238000007789 sealing Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000853 adhesive Substances 0.000 claims description 16
- 230000001070 adhesive effect Effects 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 230000017525 heat dissipation Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229920002050 silicone resin Polymers 0.000 description 5
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Description
図8は,特許文献1における従来のLED発光装置の断面図である。図8においてLED発光装置100は、LED101を実装する第1金属板102と、LED101の電極をワイヤー106によってワイヤーボンディングする電極用の第2金属板103を有し、LED101の実装面側を封止樹脂107で封止した構成となっている。そして第1金属板102と、第2金属板103との間は封止樹脂7によって接続一体化されている。
なお、図9は多数個同時生産するための構成を示しており、第1金属板212と第2金属板213と接続電極板214によるLED発光装置用のセット部材が複数個形成され、接続フレームによって接続された状態を示している。
以下図面により、本発明の第1実施形態を説明する。図1と図2は本発明の第1実施形態におけるLED発光装置を示すものであり、図1はLED発光装置の断面図、図2は図1に示すLED発光装置の裏面側の平面図を示すものである。
なお、この封止樹脂7としては蛍光粒子の混入や加工性を考慮してシリコーン樹脂等が使用されている。
次に図3から図5により図1に示すLED発光装置10の製造方法を説明する。図3は位置決め枠を用いて第1金属板2と第2金属板3とを所定の間隔に位置決め保持するまでの工程、図4はベース基板を作成し、LED1を実装するまでの工程、図5は封止樹脂による封止後、切断分離して複数のLED発光装置を完成させるまでの工程をそれぞれ示している。
次に図6、図7により、本発明の第2実施形態を説明する。図6と図7は本発明の第2実施形態におけるLED発光装置を示すものであり、図6はLED発光装置の断面図、図7は図6に示すLED発光装置の裏面側の平面図を示すものである。なお、図6、図7に示すLED発光装置70は、図1及び図2に示すLED発光装置10と基本的構成は同じであり、同一要素には同一番号を付し、重複する説明を省略する。
なお、第1金属板72と第2金属板73の変形形状は、実施例の突起部72t、73tの形状に限定されるものではなく、凹凸形状の組み合わせや、円弧形状の組み合わせ等、より強固な結合力を得るための変形を含むものである。
2、72、102,212 第1金属板
3、73、103、213 第2金属板
4 接続樹脂
5 ベース基板
5L 大判ベース基板
6 ワイヤー
7、107,207,207a、307 封止樹脂
10,70、100,200,300 LED発光装置
20 位置決め枠
21 第1凹部
22 第2凹部
30 粘着板
40 成形型
50 スクライバー
210 リードフレーム
214 接続電極板
215 切断面
310 金属ベース
310a 凸部
310b 凹部
310c 底部
320 マウント材
Claims (2)
- 第1金属板を位置決する第1凹部と、第2金属板を位置決する第2凹部とを有する位置決め枠に、各々第1金属板と第2金属板とを載置する工程と、載置された第1金属板と第2金属板との上面に粘着板を貼り付けて、第1金属板と第2金属板とを位置決め転写する工程と、粘着板上の第1金属板と第2金属板の間に接続樹脂を流し込んで、第1金属板と第2金属板とを樹脂接着して略平面形状のベース基板を形成する工程と、前記ベース基板の第1金属板上に半導体発光素子をダイボンディングする工程と、半導体発光素子の電極を前記第2金属板にワイヤーボンディングする工程と、前記ベース基板の半導体発光素子実装面側を封止樹脂で封止する工程とを有することを特徴とする半導体発光装置の製造方法。
- 前記位置決め枠は複数の第1凹部及び第2凹部の組み合わせを有する大判の位置決め枠であり、大判の粘着板上に複数の第1金属板と第2金属板の組合わせを位置決め転写する工程と、すべての第1金属板と第2金属板間に接続樹脂を流し込んで、大判のベース基板を形成する工程と、各第1金属板と第2金属板の組み合わせに半導体発光素子をダイボンディングする工程と、各半導体発光素子の電極を前記第2金属板にワイヤーボンディングする工程と、前記大判ベース基板の半導体発光素子実装面側を封止樹脂で封止して複数の半導体発光装置を形成する工程と、各半導体発光装置間を接続樹脂の部分で切断して複数の半導体発光装置に切断分離する工程とを有することを特徴とする請求項1に記載の半導体発光装置の製造方法。
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JP2010092435A JP5432045B2 (ja) | 2010-04-13 | 2010-04-13 | 半導体発光装置の製造方法 |
US13/085,909 US8420414B2 (en) | 2010-04-13 | 2011-04-13 | Method of manufacturing light-emitting device |
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JP5432045B2 true JP5432045B2 (ja) | 2014-03-05 |
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CN103219329A (zh) * | 2013-03-21 | 2013-07-24 | 歌尔声学股份有限公司 | 发光二极管装置及其制造方法 |
US9257616B2 (en) | 2013-08-27 | 2016-02-09 | Glo Ab | Molded LED package and method of making same |
US8999737B2 (en) * | 2013-08-27 | 2015-04-07 | Glo Ab | Method of making molded LED package |
JP2019012714A (ja) * | 2017-06-29 | 2019-01-24 | 株式会社ディスコ | 半導体パッケージの製造方法 |
DE102017126268A1 (de) | 2017-11-09 | 2019-05-09 | Osram Opto Semiconductors Gmbh | Träger, Anordnung mit einem Substrat und einem Träger und Verfahren zum Herstellen eines Trägers |
JP7053252B2 (ja) * | 2017-12-26 | 2022-04-12 | 日機装株式会社 | 半導体発光装置 |
WO2020038179A1 (zh) * | 2018-08-24 | 2020-02-27 | 宁波舜宇光电信息有限公司 | 电路板组件及其半成品、泛光灯、摄像模组及其应用 |
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JPS6178639A (ja) * | 1984-09-25 | 1986-04-22 | 松下電工株式会社 | 銅箔のセラミツクス基体への結合方法 |
JP3146452B2 (ja) * | 1995-08-11 | 2001-03-19 | スタンレー電気株式会社 | 面実装型led素子及びその製造方法 |
JPH10294548A (ja) * | 1997-04-22 | 1998-11-04 | Matsushita Electric Ind Co Ltd | プリント配線板の製造方法およびそれを用いたプリント配線板 |
JP3420153B2 (ja) | 2000-01-24 | 2003-06-23 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP2001326295A (ja) | 2000-05-15 | 2001-11-22 | Rohm Co Ltd | 半導体装置および半導体装置製造用フレーム |
JP4055405B2 (ja) * | 2001-12-03 | 2008-03-05 | ソニー株式会社 | 電子部品及びその製造方法 |
JP4305372B2 (ja) * | 2004-11-15 | 2009-07-29 | 日立電線株式会社 | テープキャリア及びその製造方法、並びに半導体装置の製造方法 |
JP2008186946A (ja) | 2007-01-29 | 2008-08-14 | Toshiba Corp | 光半導体装置及びその製造方法 |
JP4205135B2 (ja) | 2007-03-13 | 2009-01-07 | シャープ株式会社 | 半導体発光装置、半導体発光装置用多連リードフレーム |
JP4903179B2 (ja) * | 2007-04-23 | 2012-03-28 | サムソン エルイーディー カンパニーリミテッド. | 発光装置及びその製造方法 |
TW200941684A (en) * | 2008-03-06 | 2009-10-01 | Mitsubishi Electric Corp | Leadframe board, semiconductor module, and method for making a leadframe board |
JP5440010B2 (ja) * | 2008-09-09 | 2014-03-12 | 日亜化学工業株式会社 | 光半導体装置及びその製造方法 |
KR101521260B1 (ko) * | 2008-11-25 | 2015-05-18 | 삼성전자주식회사 | 발광 다이오드 패키지 및 이의 제조방법 |
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JP5375630B2 (ja) * | 2010-01-25 | 2013-12-25 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびにled素子パッケージおよびその製造方法 |
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JP2011222870A (ja) | 2011-11-04 |
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