TW201916149A - 層積晶圓的製造方法 - Google Patents

層積晶圓的製造方法 Download PDF

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Publication number
TW201916149A
TW201916149A TW107131997A TW107131997A TW201916149A TW 201916149 A TW201916149 A TW 201916149A TW 107131997 A TW107131997 A TW 107131997A TW 107131997 A TW107131997 A TW 107131997A TW 201916149 A TW201916149 A TW 201916149A
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wafer
liquid
wafers
manufacturing
laminated
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TW107131997A
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English (en)
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TWI791609B (zh
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関家一馬
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日商迪思科股份有限公司
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    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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Abstract

本發明的課題，係提供可抑制晶圓彼此之定位的難易度的層積晶圓的製造方法。 　　本發明的解決手段是一種層積晶圓的製造方法，係包含準備兩張晶圓的晶圓準備步驟(ST1)、於表面形成對應預定分割線之格子狀的溝，以將區劃區域形成於兩張晶圓的區劃區域形成步驟(ST2)、以區劃區域成為上面之方式設置一方的晶圓之後，從區劃區域的上面供給不會溢出之量的液體的液體供給步驟(ST3)、於被供給液體之一方的晶圓的區劃區域，將另一方的晶圓的區劃區域對向載置，利用之間被挾持的液體的表面張力，讓區劃區域的中央位置自主地一致的載置步驟(ST4)、及在實施載置步驟(ST4)之後，去除液體，使另一方的晶圓密接於一方的晶圓的液體去除步驟。

Description

層積晶圓的製造方法
本發明係關於層積晶圓的製造方法。
近年來，謀求電氣機器的小型化、薄型化，故層積複數個半導體裝置所構成之層積型半導體裝置被實用化。作為製造此種層積型半導體裝置的方法，有於晶片層積晶片，或於晶圓層積晶片的各種層積方法(例如，參照專利文獻1及專利文獻2)。作為於晶圓層積晶圓的層積方法，例如有使用TSV(Through-Silicon Via)的方法。 [先前技術文獻] [專利文獻]
[專利文獻1]日本特開2009-004406號公報 　　[專利文獻2]日本特開2012-204589號公報
[發明所欲解決之課題]
專利文獻1及專利文獻2所記載的層積方法，係一次可層積多數裝置，故非常有效率，但是，需要將對向之晶圓的所有裝置彼此正確對位，故有實施的難易度非常高的課題。
因此，本發明的目的係提供可抑制晶圓彼此之定位的難易度的層積晶圓的製造方法。 [用以解決課題之手段]
依據本發明，提供一種層積晶圓的製造方法，係使用具有在形成為格子狀的複數預定分割線所區劃的複數區域分別形成具有電極之裝置的表面之兩張晶圓的層積晶圓的製造方法，具備：晶圓準備步驟，係準備兩張該晶圓；區劃區域形成步驟，係於兩張該晶圓，將對應該預定分割線之格子狀的溝形成於表面或背面，並於各個晶圓的表面或背面形成該溝所區劃之區劃區域；液體供給步驟，係將於表面或背面形成該區劃區域之一方的晶圓，以該區劃區域成為上面之方式設置之後，從該區劃區域的上面供給不會溢出之量的液體；載置步驟，係於被供給該液體之該一方的晶圓的該區劃區域，將形成該區劃區域之另一方的晶圓的該區劃區域對向載置，利用之間被挾持的該液體的表面張力，讓該區劃區域的中央位置自主地一致；及液體去除步驟，係在實施該載置步驟之後，去除該液體，使該另一方的晶圓密接於該一方的晶圓。
理想為在該液體去除步驟中，於重疊之兩張該晶圓的外周，設置限制該晶圓往面方向偏離的限制部。
理想為在該液體去除步驟中，將重疊之兩張晶圓投入至減壓反應室，利用進行減壓，蒸發去除該液體。
理想為該晶圓的該裝置，係具備複數電極；在該液體去除步驟中，連接該一方的晶圓的電極與另一方的晶圓的電極。 [發明的效果]
依據本發明之層積晶圓的製造方法，利用液體的表面張力，自主地對兩張晶圓彼此進行定位，故可抑制晶圓彼此之定位的難易度。
針對用以實施本發明的實施形態，一邊參照圖面一邊詳細說明。本發明並不根據以下實施形態所記載之內容而有所限定。又，於以下所記載之構成要素，包含當業者可易於思及者、實質上相同者。進而，以下所記載的構造可適當組合。又，在不脫離本發明之要旨的範圍內，可進行構造的各種省略、置換或變更。
[第1實施形態] 　　依據圖面來說明本發明的第1實施形態相關之層積晶圓的製造方法。圖1係藉由第1實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。圖2係構成圖1所示之層積晶圓的晶圓的立體圖。圖3係圖2所示之晶圓的裝置的立體圖。
第1實施形態相關之層積晶圓的製造方法，係製造圖1所示之層積晶圓1的方法。圖1所示之層積晶圓1藉由圖2所示之晶圓2所構成。圖2所示之晶圓2係在第1實施形態中，將矽、藍寶石、砷化鎵等作為基板21之圓板狀的半導體晶圓或光裝置晶圓。晶圓2係於表面26具有於格子狀的預定分割線22所區劃之複數區域形成裝置23的裝置區域24，與圍繞裝置區域24且未形成裝置23的外周剩餘區域25。裝置23係如圖2及圖3所示，具備複數個從表面上突出的電極即凸塊27。
於第1實施形態中，層積晶圓1係使用兩張於表面26形成對應預定分割線22之格子狀的溝28的晶圓2，在該等兩張晶圓2的表面26彼此對向且裝置23的凸塊27相互接觸之狀態下，固定兩張晶圓2彼此所得。晶圓2彼此的固定，使用具有接著劑之功能的樹脂來固定晶圓2的基板21彼此與裝置23彼此至少一方。又，層積晶圓1係以導電性的接著劑等來固定裝置23的凸塊27彼此亦可。
接著，說明第1實施形態相關之層積晶圓的製造方法。圖4係揭示第1實施形態相關之層積晶圓的流程的流程圖。第1實施形態相關之層積晶圓的製造方法，係使用兩張晶圓2之層積晶圓1的製造方法，如圖4所示，具備晶圓準備步驟ST1、區劃區域形成步驟ST2、液體供給步驟ST3、載置步驟ST4、液體去除步驟ST5。
(晶圓準備步驟) 　　晶圓準備步驟ST1係準備圖2所示之晶圓2的步驟。在晶圓準備步驟ST1中，準備兩張圖2所示之晶圓2。
(區劃區域形成步驟) 　　圖5係揭示圖4所示之層積晶圓的製造方法之區劃區域形成步驟的側視圖。圖6係圖4所示之層積晶圓的製造方法之區劃區域形成步驟後的晶圓的立體圖。圖7係沿著圖6中的VII-VII線的剖面圖。
區劃區域形成步驟ST2係於兩張晶圓2，將對應預定分割線22之格子狀的溝28形成於表面26，並於各個晶圓2的表面26，形成藉由溝28所區劃之區劃區域30的步驟。在區劃區域形成步驟ST2中，使用圖5所示之切削裝置40，於晶圓準備步驟ST1中所準備之兩張晶圓2依序形成溝28。
在區劃區域形成步驟ST2中，於兩張晶圓2個別形成溝28時，如圖5所示，將晶圓2的背面29側吸引保持切削裝置40的吸盤台41。在區劃區域形成步驟ST2中，切削裝置40如圖5所示般，一邊使藉由主軸42旋轉的切削刀43，與被吸盤台41保持的晶圓2，沿著預定分割線22相對移動，一邊使切削刀43切入至未到達背面29的深度為止。
在區劃區域形成步驟ST2中，切削裝置40如圖6及圖7所示般，於各預定分割線22形成從表面26側未到達背面29的深度的溝28，於表面26側中相互鄰接之溝28間形成區劃區域30。於第1實施形態中，在區劃區域形成步驟ST2中，於裝置區域24形成區劃區域30。於外周剩餘區域25，形成區劃區域30亦可，不形成亦可。亦即，在第1實施形態中，於區劃區域形成步驟ST2中所形成的區劃區域30，包含裝置23。層積晶圓的製造方法係於兩張晶圓2個別之所有預定分割線22形成溝28時，則前進至液體供給步驟ST3。
(液體供給步驟) 　　圖8係圖4所示之層積晶圓的製造方法之液體供給步驟後的晶圓之要部的剖面圖。
液體供給步驟ST3係以區劃區域30成為上面之方式設置於表面26形成區劃區域30之兩張晶圓2中一方的晶圓2(以下記述為符號2-1)之後，從區劃區域30的上面將不會溢出之量的液體31供給至區劃區域30上的步驟。在液體供給步驟ST3中，將藉由區劃區域形成步驟ST2形成溝28及區劃區域30之兩張晶圓2中一方的晶圓2-1，以表面26露出之方式固定背面29側之外，將未圖示的液體供給用的噴嘴，定位於一方的晶圓2-1的表面26之上方。
在液體供給步驟ST3中，噴嘴將液體31依序供給至各區劃區域30的表面上。在液體供給步驟ST3中，噴嘴係將藉由表面張力不會流出(限制流出)至區劃各區劃區域30的溝28之量的液體31，供給至各區劃區域30的表面上。亦即，在液體供給步驟ST3中，噴嘴係將可藉由表面張力維持僅附著於各區劃區域30之量的液體31，供給至各區劃區域30的表面上。於第1實施形態中，在液體供給步驟ST3中，作為液體31供給純水，但在本發明中，尤其在連接兩張晶圓2的凸塊27彼此時，作為液體31供給接著劑或底膠材料亦可。層積晶圓的製造方法，係如圖8所示，對一方的晶圓2-1之所有區劃區域30的表面上供給液體31時，則前進至載置步驟ST4。
(載置步驟) 　　圖9係揭示圖4所示之層積晶圓的製造方法之載置步驟的立體圖。圖10係圖9所示之晶圓的要部的剖面圖。圖11係圖4所示之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。
載置步驟ST4係於被供給液體31之一方的晶圓2-1的區劃區域30，將形成區劃區域30之另一方的晶圓2(以下記述為符號2-2)的區劃區域30對向載置，利用之間被挾持的液體31的表面張力，讓區劃區域30的中央位置自主地一致的步驟。在載置步驟ST4中，將對區劃區域30的表面上供給液體31之一方的晶圓2-1以表面26露出之方式固定背面29側之後，如圖9及圖10所示，將兩張晶圓2-1、2-2於厚度方向隔開間隔進行重疊，並且使另一方的晶圓2-2的區劃區域30與一方的晶圓2-1的區劃區域30對向。
在載置步驟ST4中，將另一方的晶圓2-2的區劃區域30，重疊於一方的晶圓2-1的區劃區域30。此時，使另一方的晶圓2-2的區劃區域30接觸一方的晶圓2-1之僅一個區劃區域30的表面上的液體31，不接觸一方的晶圓2-1的複數區劃區域30之表面上的液體31。於是，液體31接觸兩張晶圓2-1、2-2的區劃區域30，藉由液體31的表面張力，讓另一方的晶圓2-2自主地移動，如圖11所示，兩張晶圓2-1、2-2彼此自主地被定位於兩張晶圓2-1、2-2之對向的區劃區域30彼此重疊於厚度方向的位置。層積晶圓的製造方法，係前進至液體去除步驟ST5。
(液體去除步驟) 　　圖12係揭示圖4所示之層積晶圓的製造方法之液體去除步驟的立體圖。
液體去除步驟ST5係在實施載置步驟ST4之後，去除液體31，使另一方的晶圓2-2密接於一方的晶圓2-1的步驟。液體去除步驟ST5係在載置步驟ST4之後，如圖12所示，於相互重疊，且藉由液體31的表面張力以定位相互的相對位置之兩張晶圓2-1、2-2的外周，設置限制部50。限制部50係於兩張晶圓2-1、2-2的圓周方向隔開間隔配置複數個(在第1實施形態中為3個)，抵接於兩張晶圓2-1、2-2的外周，限制該等兩張晶圓2-1、2-2相對地偏離於面方向即與表面26平行的方向。如此，在液體去除步驟ST5中，於重疊之兩張晶圓2-1、2-2的外周設置限制部50。
液體去除步驟ST5係如圖12所示，在設置限制部50之狀態下，將重疊之兩張晶圓2-1、2-2投入至減壓反應室51內，排出減壓反應室51內的氣體，對減壓反應室51內進行減壓。在液體去除步驟ST5中，利用對減壓反應室51內進行減壓，蒸發去除液體31，如圖1所示，使兩張晶圓2-1、2-2之相互重疊的裝置23的凸塊27彼此密接。如此，在液體去除步驟ST5中，連接一方的晶圓2-1的凸塊27，與另一方的晶圓2-2的凸塊27。然後，兩張晶圓2-1、2-2係藉由未圖示的接著劑等相互固定，製造層積晶圓1。層積晶圓1係磨削薄化兩張晶圓2-1、2-2至少一方亦可。層積晶圓1係沿著兩張晶圓2-1、2-2雙方的預定分割線22，施行切削加工或雷射加工，分割成層積兩個裝置23的層積亦可。
第1實施形態相關之層積晶圓的製造方法，係於載置步驟ST4中，利用被供給至裝置23的表面上之液體31的表面張力，讓兩張晶圓2-1、2-2彼此自主地定位，故發揮可容易實施晶圓2-1、2-2彼此的定位之效果。結果，第1實施形態相關之層積晶圓的製造方法，係可抑制晶圓2-1、2-2彼此之定位的難易度。
[第2實施形態] 　　依據圖面來說明本發明的第2實施形態相關之層積晶圓的製造方法。圖13係藉由第2實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。圖14係第2實施形態相關之層積晶圓的製造方法之載置步驟的晶圓之要部的剖面圖。圖15係第2實施形態相關之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。再者，圖13、圖14及圖15係於與第1實施形態相同部分附加相同符號並省略說明。
藉由第2實施形態相關之層積晶圓1-2的製造方法所製造之層積晶圓1-2，係如圖13所示，兩張晶圓2-1、2-2中另一方的晶圓2-2，具備電極即貫通電極(TSV: Through-Silicon Via)27-2，貫通電極27-2連接於一方的晶圓2-1的裝置23以外，構造與藉由第1實施形態相關之層積晶圓的製造方法所製造之層積晶圓1相等。再者，貫通電極27-2係形成為由金屬所構成之柱狀，涵蓋表面26與背面29貫通另一方的晶圓2-2的基板21，一體地具備從另一方的晶圓2-2的表面26突出之電極部27。
第2實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，具備晶圓準備步驟ST1、區劃區域形成步驟ST2、液體供給步驟ST3、載置步驟ST4、液體去除步驟ST5。第2實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，於載置步驟ST4中，如圖14所示，使另一方的晶圓2-2的區劃區域30與一方的晶圓2-1的區劃區域30對向之後，如圖15所示，將另一方的晶圓2-2的區劃區域30載置於被供給至一方的晶圓2-1之區劃區域30的表面上的液體31。於是，兩張晶圓2-1、2-2係藉由液體31的表面張力，被定位於區劃區域30相互重疊的位置。
第2實施形態相關之層積晶圓的製造方法，係於載置步驟ST4中，利用被供給至裝置23的表面上之液體31的表面張力，讓兩張晶圓2-1、2-2彼此自主地定位，故與第1實施形態相同，可抑制晶圓2-1、2-2彼此之定位的難易度。
[第3實施形態] 　　依據圖面來說明本發明的第3實施形態相關之層積晶圓的製造方法。圖16係第3實施形態相關之層積晶圓的製造方法之區劃區域形成步驟後的晶圓的立體圖。圖17係沿著圖16中的XVII-XVII線的剖面圖。圖18係第3實施形態相關之層積晶圓的製造方法之液體供給步驟後的晶圓之要部的剖面圖。圖19係揭示第3實施形態相關之層積晶圓的製造方法之載置步驟的晶圓之要部的剖面圖。圖20係第3實施形態相關之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。圖21係藉由第3實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。圖16至圖21係於與第1實施形態相同部分附加相同符號並省略說明。
第3實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，具備晶圓準備步驟ST1、區劃區域形成步驟ST2、液體供給步驟ST3、載置步驟ST4、液體去除步驟ST5。
第3實施形態相關之層積晶圓的製造方法，係於區劃區域形成步驟ST2中，如圖16及圖17所示，於兩張晶圓2-1、2-2個別的外周剩餘區域25形成與預定分割線22平行的溝28，於外周剩餘區域25也形成被溝28所區劃的區劃區域30。
第3實施形態相關之層積晶圓的製造方法，係於液體供給步驟ST3中，如圖18所示，對形成於兩張晶圓2中一方的晶圓2-1的外周剩餘區域25之區劃區域30的表面上，供給藉由表面張力而不會流出(限制流出)區劃各區劃區域30的溝28之量的液體31，並且不對形成於裝置區域24之區劃區域30的表面上供給液體31。又，在第3實施形態相關之層積晶圓的製造方法中，於液體供給步驟ST3中，對形成於裝置區域24之區劃區域30的表面上塗布接著劑35。再者，在本發明中，於液體供給步驟ST3中，不一定不對形成於裝置區域24之區劃區域30的表面上塗布接著劑35亦可。又，於第3實施形態中，讓塗布於形成於裝置區域24之區劃區域30的表面上之接著劑35的厚度，比供給至形成於外周剩餘區域25之區劃區域30的表面上之液體31的厚度還薄，在本發明中，只要將接著劑35的厚度設為液體31的厚度以下即可。
第3實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，於載置步驟ST4中，如圖19所示，使另一方的晶圓2-2的區劃區域30與一方的晶圓2-1的區劃區域30對向之後，如圖20所示，將另一方的晶圓2-2的區劃區域30載置於被供給至一方的晶圓2-1之區劃區域30的表面上的液體31。於是，兩張晶圓2-1、2-2係藉由液體31的表面張力，被定位於區劃區域30相互重疊的位置。然後，第3實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，於液體去除步驟ST5中利用加熱或於減壓反應室51收容晶圓2-1、2-2來去除液體31，藉由接著劑35相互固定兩張晶圓2-1、2-2的裝置區域24的區劃區域30彼此，如圖21所示，製造連接了一方的晶圓2-1之凸塊27與另一方的晶圓2-2之凸塊27的層積晶圓1-3。再者，於第3實施形態中，於液體去除步驟ST5中，完全去除液體31，但是在本發明中，只要至少去除液體31到接著劑35可固定兩張晶圓2-1、2-2之裝置區域24的區劃區域30彼此的程度即可。
第3實施形態相關之層積晶圓的製造方法，係於載置步驟ST4中，利用液體31的表面張力，讓兩張晶圓2-1、2-2彼此自主地定位，故與第1實施形態相同，可抑制晶圓2-1、2-2彼此之定位的難易度。
[第4實施形態] 　　依據圖面來說明本發明的第4實施形態相關之層積晶圓的製造方法。圖22係第4實施形態相關之層積晶圓的製造方法之區劃區域形成步驟後的晶圓的剖面圖。圖23係沿著圖22中的XXIII-XXIII線的剖面圖。圖24係第4實施形態相關之層積晶圓的製造方法之液體供給步驟後的晶圓之要部的剖面圖。圖25係揭示第4實施形態相關之層積晶圓的製造方法之載置步驟的晶圓之要部的剖面圖。圖26係第4實施形態相關之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。圖27係藉由第4實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。圖22至圖27係於與第1實施形態相同部分附加相同符號並省略說明。
第4實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，具備晶圓準備步驟ST1、區劃區域形成步驟ST2、液體供給步驟ST3、載置步驟ST4、液體去除步驟ST5。
第4實施形態相關之層積晶圓的製造方法，係於晶圓準備步驟ST1中，準備兩張並未於裝置區域24之被格子狀的預定分割線22所區劃之複數區域的一部分區域形成裝置的晶圓2-1、2-2。第4實施形態相關之層積晶圓的製造方法，係於區劃區域形成步驟ST2中，與第1實施形態相同，如圖22及圖23所示，於兩張晶圓2-1、2-2個別的裝置區域24形成溝28，於裝置區域24形成被溝28所區劃的區劃區域30。
第4實施形態相關之層積晶圓的製造方法，係於液體供給步驟ST3中，如圖24所示，對形成於兩張晶圓2-1、2-2中一方的晶圓2-1的裝置區域24之未形成裝置23的區劃區域30的表面上，供給藉由表面張力而不會流出(限制流出)區劃各區劃區域30的溝28之量的液體31，並且不對裝置區域24之形成裝置23的區劃區域30的表面上供給液體31。又，在第4實施形態相關之層積晶圓的製造方法中，於液體供給步驟ST3中，對裝置區域24之形成裝置23的區劃區域30的表面上塗布接著劑35。再者，在本發明中，於液體供給步驟ST3中，不一定不對形成於裝置區域24之區劃區域30的表面上塗布接著劑35亦可。又，於第4實施形態中，讓塗布於裝置區域24的形成裝置23之區劃區域30的表面上之接著劑35的厚度，比供給至未形成裝置23之區劃區域30的表面上之液體31的厚度還薄，在本發明中，只要將接著劑35的厚度設為液體31的厚度以下即可。
第4實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，於載置步驟ST4中，如圖25所示，使另一方的晶圓2-2的區劃區域30與一方的晶圓2-1的區劃區域30對向之後，如圖26所示，將另一方的晶圓2-2的區劃區域30載置於被供給至一方的晶圓2-1之區劃區域30的表面上的液體31。於是，兩張晶圓2-1、2-2係藉由液體31的表面張力，被定位於區劃區域30相互重疊的位置。然後，第4實施形態相關之層積晶圓的製造方法，係與第1實施形態相同，於液體去除步驟ST5中利用加熱或於減壓反應室51收容晶圓2-1、2-2來去除液體31，藉由接著劑35相互固定兩張晶圓2-1、2-2的裝置區域24的區劃區域30彼此，如圖27所示，製造連接了一方的晶圓2-1之凸塊27與另一方的晶圓2-2之凸塊27的層積晶圓1-4。再者，於第4實施形態中，於液體去除步驟ST5中，完全去除液體31，但是在本發明中，只要至少去除液體31到接著劑35可固定兩張晶圓2-1、2-2之裝置區域24的區劃區域30彼此的程度即可。
第4實施形態相關之層積晶圓的製造方法，係於載置步驟ST4中，利用液體31的表面張力，讓兩張晶圓2-1、2-2彼此自主地定位，故與第1實施形態相同，可抑制晶圓2-1、2-2彼此之定位的難易度。
[變形例] 　　依據圖面來說明本發明的第1實施形態至第4實施形態的變形例相關之層積晶圓的製造方法。圖28係第1實施形態至第4實施形態的變形例相關之層積晶圓的製造方法之區劃區域形成步驟後的晶圓之要部的剖面圖。圖28係於與第1實施形態至第4實施形態相同部分附加相同符號並省略說明。
第1實施形態至第4實施形態的變形例相關之層積晶圓的製造方法，係於區劃區域形成步驟ST2中，如圖28所示，於至少1張晶圓2的背面29形成對應預定分割線22的溝28以外，與第1實施形態至第3實施形態相關之層積晶圓的製造方法相同。再者，變形例相關之層積晶圓的製造方法之區劃區域形成步驟ST2中，形成於背面29的溝28，係形成與背面29的預定分割線22重疊於厚度方向的位置。
變形例相關之層積晶圓的製造方法，係於載置步驟ST4中，利用被供給至裝置23的表面上之液體31的表面張力，讓兩張晶圓2-1、2-2彼此自主地定位，故與第1實施形態至第3實施形態相同，可抑制晶圓2-1、2-2彼此之定位的難易度。
再者，本發明並不是限定於前述實施形態者。亦即，在不脫離本發明的要點的範圍中可進行各種變形來實施。
1，1-2，1-3，1-4‧‧‧層積晶圓
2‧‧‧晶圓
2-1‧‧‧一方的晶圓
2-2‧‧‧另一方的晶圓
22‧‧‧預定分割線
23‧‧‧裝置
26‧‧‧表面
27‧‧‧凸塊(電極)
27-2‧‧‧貫通電極(電極)
28‧‧‧溝
29‧‧‧背面
30‧‧‧區劃區域
31‧‧‧液體
50‧‧‧限制部
51‧‧‧減壓反應室
ST1‧‧‧晶圓準備步驟
ST2‧‧‧區劃區域形成步驟
ST3‧‧‧液體供給步驟
ST4‧‧‧載置步驟
ST5‧‧‧液體去除步驟
[圖1]圖1係藉由第1實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。 　　[圖2]圖2係構成圖1所示之層積晶圓的晶圓的立體圖。 　　[圖3]圖3係圖2所示之晶圓的裝置的立體圖。 　　[圖4]圖4係揭示第1實施形態相關之層積晶圓的流程的流程圖。 　　[圖5]圖5係揭示圖4所示之層積晶圓的製造方法之區劃區域形成步驟的側視圖。 　　[圖6]圖6係圖4所示之層積晶圓的製造方法之區劃區域形成步驟後的晶圓的立體圖。 　　[圖7]圖7係沿著圖6中的VII-VII線的剖面圖。 　　[圖8]圖8係圖4所示之層積晶圓的製造方法之液體供給步驟後的晶圓之要部的剖面圖。 　　[圖9]圖9係揭示圖4所示之層積晶圓的製造方法之載置步驟的立體圖。 　　[圖10]圖10係圖9所示之晶圓的要部的剖面圖。 　　[圖11]圖11係圖4所示之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。 　　[圖12]圖12係揭示圖4所示之層積晶圓的製造方法之液體去除步驟的立體圖。 　　[圖13]圖13係藉由第2實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。 　　[圖14]圖14係第2實施形態相關之層積晶圓的製造方法之載置步驟的晶圓之要部的剖面圖。 　　[圖15]圖15係第2實施形態相關之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。 　　[圖16]圖16係第3實施形態相關之層積晶圓的製造方法之區劃區域形成步驟後的晶圓的立體圖。 　　[圖17]圖17係沿著圖16中的XVII-XVII線的剖面圖。 　　[圖18]圖18係第3實施形態相關之層積晶圓的製造方法之液體供給步驟後的晶圓之要部的剖面圖。 　　[圖19]圖19係揭示第3實施形態相關之層積晶圓的製造方法之載置步驟的晶圓之要部的剖面圖。 　　[圖20]圖20係第3實施形態相關之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。 　　[圖21]圖21係藉由第3實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。 　　[圖22]圖22係第4實施形態相關之層積晶圓的製造方法之區劃區域形成步驟後的晶圓的立體圖。 　　[圖23]圖23係沿著圖22中的XXIII-XXIII線的剖面圖。 　　[圖24]圖24係第4實施形態相關之層積晶圓的製造方法之液體供給步驟後的晶圓之要部的剖面圖。 　　[圖25]圖25係揭示第4實施形態相關之層積晶圓的製造方法之載置步驟的晶圓之要部的剖面圖。 　　[圖26]圖26係第4實施形態相關之層積晶圓的製造方法之載置步驟後的晶圓之要部的剖面圖。 　　[圖27]圖27係藉由第4實施形態相關之層積晶圓的製造方法所製造之層積晶圓的要部的剖面圖。 　　[圖28]圖28係第1實施形態至第4實施形態的變形例相關之層積晶圓的製造方法之區劃區域形成步驟後的晶圓之要部的剖面圖。

Claims (4)

  1. 一種層積晶圓的製造方法，係使用具有在形成為格子狀的複數預定分割線所區劃的複數區域分別形成具有電極之裝置的表面之兩張晶圓的層積晶圓的製造方法，其特徵為具備： 　　晶圓準備步驟，係準備兩張該晶圓； 　　區劃區域形成步驟，係於兩張該晶圓，將對應該預定分割線之格子狀的溝形成於表面或背面，並於各個晶圓的表面或背面形成該溝所區劃之區劃區域； 　　液體供給步驟，係將於表面或背面形成該區劃區域之一方的晶圓，以該區劃區域成為上面之方式設置之後，從該區劃區域的上面供給不會溢出之量的液體； 　　載置步驟，係於被供給該液體之該一方的晶圓的該區劃區域，將形成該區劃區域之另一方的晶圓的該區劃區域對向載置，利用之間被挾持的該液體的表面張力，讓該區劃區域的中央位置自主地一致；及 　　液體去除步驟，係在實施該載置步驟之後，去除該液體，使該另一方的晶圓密接於該一方的晶圓。
  2. 如申請專利範圍第1項所記載之層積晶圓的製造方法，其中， 　　在該液體去除步驟中，於重疊之兩張該晶圓的外周，設置限制該晶圓往面方向偏離的限制部。
  3. 如申請專利範圍第1項所記載之層積晶圓的製造方法，其中， 　　在該液體去除步驟中，將重疊之兩張晶圓投入至減壓反應室，利用進行減壓，蒸發去除該液體。
  4. 如申請專利範圍第1項所記載之層積晶圓的製造方法，其中， 　　該晶圓的該裝置，係具備電極；在該液體去除步驟中，連接該一方的晶圓的電極與另一方的晶圓的電極。
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