TW201733419A - 電子零件之製造方法及電子零件之製造裝置 - Google Patents

電子零件之製造方法及電子零件之製造裝置 Download PDF

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TW201733419A
TW201733419A TW106103229A TW106103229A TW201733419A TW 201733419 A TW201733419 A TW 201733419A TW 106103229 A TW106103229 A TW 106103229A TW 106103229 A TW106103229 A TW 106103229A TW 201733419 A TW201733419 A TW 201733419A
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pad
component
state
metal member
manufacturing
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TW106103229A
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TWI636721B (zh
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Soichi Homma
Naoyuki Komuta
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Toshiba Kk
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    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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Abstract

本發明之實施形態提供一種能夠實現低電阻連接之電子零件之製造方法及電子零件之製造裝置。 根據實施形態，於電子零件之製造方法中，使具有設置有第1焊墊之第1面之第1零件之第1面、與具有設置有第2焊墊之第2面之第2零件之第2面，以於第1、第2焊墊之至少任一者設置有個體狀之金屬構件之第1狀態相互對向。使金屬構件熔融，且於熔融之金屬構件與第1、第2焊墊相接之狀態下，使第1、第2零件之至少任一者沿第1面移動。使金屬構件成為固體狀，而形成將第1、第2焊墊藉由固體狀之金屬構件相互電性連接之第2狀態。第1狀態下之第1、第2焊墊之幾何學重心彼此之距離長於第2狀態下之幾何學重心彼此之距離。

Description

電子零件之製造方法及電子零件之製造裝置
本發明之實施形態係關於一種電子零件之製造方法及電子零件之製造裝置。
電子零件中，例如藉由覆晶連接等將零件連接於基板等。期望更低電阻之連接。
本發明之實施形態提供一種能夠實現低電阻連接之電子零件之製造方法及電子零件之製造裝置。 根據本發明之實施形態，電子零件之製造方法包含：使具有設置有第1焊墊之第1面之第1零件之上述第1面、與具有設置有第2焊墊之第2面之第2零件之上述第2面，以於上述第1焊墊及上述第2焊墊之至少任一者設置有個體狀之金屬構件之第1狀態下相互對向。本製造方法包含：使上述金屬構件熔融，且使上述第1零件與上述第2零件接近，直至上述熔融之上述金屬構件與上述第1焊墊及上述第2焊墊相接為止。本製造方法包含：於使上述第1零件與上述第2零件接近之後，在上述熔融之上述金屬構件與上述第1焊墊及上述第2焊墊相接之狀態下，使上述第1零件及上述第2零件之至少任一者沿上述第1面移動。本製造方法包含：於使上述第1零件及上述第2零件之上述至少任一者移動之後使上述金屬構件成為固體狀，而形成將上述第1焊墊及上述第2焊墊藉由上述固體狀之上述金屬構件相互電性連接之第2狀態。上述第1狀態下之上述第1焊墊之平面形狀之第1幾何學重心、與上述第1狀態下之上述第2焊墊之平面形狀之第2幾何學重心之間的沿上述第1面之方向上之第1距離，長於上述第2狀態下之上述第1幾何學重心與上述第2狀態下之上述第2幾何學重心之間的沿上述第1面之方向上之第2距離。
以下，一面參照圖式一面說明本發明之各實施形態。 圖式係模式性或概念性圖，且各部分之厚度與寬度之關係、部分間之大小之比率等未必與實物相同。即便於表示相同部分之情形時，亦有根據圖式而差別表示相互之尺寸或比率的情況。 於本案說明書及各圖中，對與關於已出現之圖在上文已敍述過之要素相同之要素附上相同之符號並適當省略詳細之說明。 圖1(a)～圖1(g)係例示實施形態之電子零件之製造方法之模式性剖視圖。 圖2係例示實施形態之電子零件之製造裝置之模式圖。 如圖2所示，實施形態之電子零件之製造裝置110包含平台50、頭部60及控制部70。製造裝置110例如為倒裝接合機。 於平台50載置第1零件10。第1零件10具有第1面10a。於第1面10a設置有第1焊墊11。例如，於第1零件10設置第1基板10s，於第1基板10s之1個面(第1面10a)設置第1焊墊11。該例中，於平台50設置孔52。孔52之內部能夠減壓。藉由孔52而吸附並固定第1零件10。 該例中，平台50包含第1溫度控制部51。第1溫度控制部51例如包含陶瓷加熱器等。例如，藉由第1溫度控制部51而控制第1零件10之溫度。 頭部60能夠保持第2零件20。第2零件20具有第2面20a。於第2面20a設置有第2焊墊21。例如，於第2零件20設置第2基板20s，於第2基板20s之1個面(第2面20a)設置第2焊墊21。 於頭部60例如設置孔62，孔62之內部能夠減壓。藉由孔62而吸附第2零件20，並保持第2零件20。 該例中，頭部60包含第2溫度控制部61。第2溫度控制部61例如包含陶瓷加熱器等。例如，藉由第2溫度控制部61而控制第2零件20之溫度。 使被保持於頭部60之第2零件20之第2面20a與第1零件10之第1面10a對向。 頭部60例如被支持部65支持。使支持部65移動，由此，能夠變更頭部60之位置。 將相對於平台50之上表面垂直之方向設為Z軸方向。將相對於Z軸方向垂直之1個方向設為X軸方向。將相對於Z軸方向及X軸方向垂直之方向設為Y軸方向。 控制部70控制平台50及頭部60之相對位置。相對位置包含Z軸方向之位置。相對位置包含X-Y平面內之至少1個方向。相對位置亦可包含例如X軸方向之位置及Y軸方向之位置。 控制部70進而控制平台50及頭部60中之至少任一者之溫度。例如，控制部70控制上述第1溫度控制部51及第2溫度控制部61。由此，平台50之溫度及頭部60之溫度得以控制。由此，第1零件10之溫度及第2零件20之溫度進而得以控制。 第1零件10及第2零件20中之至少任一者具有金屬構件30。金屬構件30例如包含焊料。藉由控制第1零件10及第2零件20中之至少任一者之溫度，而金屬構件30自固體狀變化為液體狀。藉由進行溫度控制，而金屬構件30自液體狀變化為固體狀。例如，若金屬構件30之溫度超過金屬構件30之熔點，則金屬構件30熔解(熔融)，金屬構件30為液相。當金屬構件30之溫度未達金屬構件30之熔點時，金屬構件30為固相。 該例中，製造裝置110進而包含攝像部55(例如相機)。例如利用攝像部55檢測第1零件10與第2零件20之間之相對位置，進行對準。 於對準之後，使第1零件10與第2零件20介隔金屬構件30而接近。金屬構件30熔解，之後，金屬構件30成為固相。由此，使得第1零件10與第2零件20相互接合。第1焊墊11與第2焊墊21藉由金屬構件30而電性連接。 以下，參照圖1(a)～圖1(g)對使用製造裝置110之電子零件之製造方法之例進行說明。 如圖1(a)所示，準備第2零件20。第2零件20具有設置有第2焊墊21之第2面20a。該例中，於第2面20a進而設置有另一焊墊22。 該例中，如圖1(b)所示，於第2焊墊21(及另一焊墊22)設置有個體狀之金屬構件30(第2金屬構件32)。如下所述，金屬構件30亦可設置於第1焊墊11及第2焊墊21中之至少任一者。 金屬構件30例如為凸塊(例如焊料凸塊)。金屬構件30包含焊料。焊料例如包含錫。金屬構件30亦可包含錫與其他金屬之合金。關於金屬構件30之例將於下文進行敍述。 另一方面，如圖1(c)所示，準備第1零件10。第1零件10具有設置有第1焊墊11之第1面10a，該例中，於第1面10a進而設置有另一焊墊12。 如圖1(d)所示，於載置在平台50(圖1(d)中未圖示)之上之第1零件10之上，配置由頭部60保持之第2零件20。使第1面10a與第2面20a相互對向。此時，於第1焊墊11及第2焊墊21中之至少任一者設置有個體狀之金屬構件30。該例中，於第2焊墊21設置有個體狀之金屬構件30(第2金屬構件32)。 例如，於圖1(d)之狀態(平台50與頭部60之間之距離較遠之狀態)下，利用攝像部55檢測第1零件10與第2零件20之間之相對位置。基於攝像部55之檢測結果(與相對位置相關之資訊)，進行第1零件10與第2零件20之間之對準。對準係藉由控制平台50及頭部60中之至少任一者之位置(控制X-Y平面內之位置)而進行。 如圖1(e)所示，使攝像部55自第1零件10與第2零件20之間之空間移動。繼而，使第1零件10與第2零件20介隔金屬構件30而接近。例如，自圖1(d)之狀態變更Z軸方向之位置。該位置之變更係藉由控制平台50及頭部60中之至少任一者而進行。將圖1(e)所示之狀態設為第1狀態ST1。於第1狀態ST1下，在第1焊墊11及第2焊墊21之至少任一者設置有個體狀之金屬構件30。於當自圖1(d)之狀態轉變為圖1(e)之狀態時，若X-Y方向之位置實質上未變更，亦可將圖1(d)之狀態設為第1狀態ST1。 如此，於實施形態中，使第1零件10之第1面10a與第2零件20之第2面20a於第1狀態ST1(於第1焊墊11及第2焊墊21之至少任一者設置有個體狀之金屬構件30之狀態)下相互對向(第1步驟，第1動作)。 第1狀態ST1時之金屬構件30之溫度低於熔點。例如，於金屬構件30之熔點為200℃之情形時，第1狀態ST1時之金屬構件30之溫度為50℃。 如圖1(e)所示，於實施形態中，將該第1狀態ST1下之第1焊墊11之平面形狀之第1幾何學重心11c與第1狀態ST1下之第2焊墊21之平面形狀之第2幾何學重心21c之間的距離設為第1距離d1。第1距離d1相對較大。即，將2個焊墊偏移。關於幾何學重心將於下文進行敍述。 如圖1(f)所示，於上述第1步驟(第1動作)之後，使金屬構件30熔融。繼而，使第1零件10之第1面10a與第2零件20之第2面20a相互接近，直至成為已熔融之金屬構件30與第1焊墊11及第2焊墊21之兩者相接之狀態為止。於已熔融之金屬構件30與第1焊墊11及第2焊墊21相接之狀態下，使第1零件10及第2零件20之至少任一者沿第1面10a移動(第2步驟，第2動作)。於該第2步驟(第2動作)中，例如，以頭部60保持第1零件10，使第1零件10沿第1面10a移動。例如，於金屬構件30之熔點為200℃之情形時，第2步驟中之金屬構件30之溫度為250℃。 上述熔融係藉由利用控制部70控制平台50及頭部60之至少任一者而進行。例如，移動係沿X-Y平面內之方向進行。上述移動係沿具有X軸方向及Y軸方向之至少任一者之成分之方向進行。該移動係藉由利用控制部70控制平台50及頭部60之至少任一者而進行。 藉此，第1零件10與第2零件20之間之相對位置關係成為與第1狀態ST1不同之狀態。 如圖1(g)所示，於第2步驟(第2動作)之後，使金屬構件30成為固體狀。形成第1焊墊11及第2焊墊21藉由固體狀之金屬構件30而相互電性連接之第2狀態ST2(第3步驟，第3動作)。於第3步驟中，實質上維持例如藉由第2步驟而移動之第1零件10及第2零件20之相對位置關係。例如，於金屬構件30之熔點為200℃之情形時，第3步驟中之金屬構件30之溫度為100℃。 如圖1(g)所示，第2狀態ST2下之2個焊墊之相對距離與第1狀態ST1相比縮小。將第2狀態ST2下之第1幾何學重心11c與第2狀態下之第2幾何學重心21c之間的沿第1面10a之方向上之距離設為第2距離d2。第2距離d2較第1距離d1短。換言之，第1距離d1較第2距離d2長。 即，實施形態中，於金屬構件30熔融之前之第1狀態ST1下，例如使第1焊墊11及第2焊墊12自特定位置偏移。進行偏移後之對準。繼而，於金屬構件30熔融之狀態下，使2個零件於X-Y面內相對移動。之後，使金屬構件30成為固相。藉由自偏移後進行之對準之位置變更位置，例如第1焊墊11與第2焊墊21之位置關係接近特定之關係(設計位置)。 如圖1(f)所示，可知有於金屬構件30熔解之狀態下產生孔隙35之情形。若於殘留有該孔隙35之狀態下金屬構件30成為固相，則第1焊墊11與第2焊墊21之間之電性連接時之電流路徑變窄。藉此，連接之電阻變高。可知例如於焊墊為凹狀之情形時(下文敍述)特別容易產生此種孔隙35。 根據發明者等人之實驗，可知若於金屬構件30熔解之狀態下使第1零件10及第2零件20相對移動，則可抑制電阻值上升。認為藉由相對移動，孔隙35消失或孔隙35之量減少。 此時，若於使金屬構件30熔解之前之狀態(第1狀態ST1)下進行最終之目標位置(設計位置)之對準，則之後於金屬構件30熔解之狀態下使零件相對地移動時，最終之位置會自目標位置設計位置偏移。 相對於此，實施形態中，例如，於使金屬構件30熔解之前之狀態(第1狀態ST1)下，自特定位置偏移並進行對準。藉此，在之後金屬構件30熔解時之零件之移動之後，位置接近特定位置。藉此，例如，於設計位置上進行連接。 實施形態中，能夠抑制於電性連接後產生孔隙35。藉此，可提供能夠實現低電阻連接之電子零件之製造方法及電子零件之製造裝置。 有於接合時施加例如振動(超音波等)之參考例。參考例中，對液相之金屬構件30施加振動。此種參考例中，第1距離d1與第2距離d2實質上相同。於施加了振動之情形時，孔隙35之抑制不充分。實施形態中，於第1狀態ST1下第1零件10與第2零件20之間的第1距離d1可大於藉由振動等獲得之距離。藉此，得以有效地抑制孔隙35。 實施形態中，圖1(f)所例示之第2步驟中之移動(金屬構件30熔解之狀態下之第1零件10及第2零件20之相對移動)例如亦可基於有關第1狀態ST1下之第1零件10與第2零件20之間的相對位置之資訊而實施。第2步驟(第2動作)中之移動例如亦可基於利用獲取有關第1零件10及第2零件20之位置之資訊之攝像部55所獲取的資訊而實施。 以下，對第1零件10及第2零件20之例進行說明。 圖3(a)～圖3(d)係表示實施形態之電子零件之製造方法中所使用之零件之模式性剖視圖。 如圖3(a)所示，第1零件10中，例如，於第1基板10s之上設置配線11e及配線12e。於該等配線之一部分之上設置具有開口部13o之絕緣層13。例如，於在開口部13o露出之配線11e之上及絕緣層13之一部分之上，設置第1焊墊11。於在開口部13o露出之配線12e之上及絕緣層13之另一部分之上，設置另一焊墊12。 於圖3(a)之例中，第1焊墊11為凹狀。例如，第1焊墊11包含第1中側區域11i及第1外緣區域11o。第1中側區域11i包含第1焊墊11之平面形狀之第1幾何學重心11c。第1外緣區域11o設置於第1中側區域11i之周圍。第1中側區域11i相對於第1外緣區域11o後退。於此種凹狀之焊墊中容易產生孔隙35。尤其於使用助焊劑之情形時，孔隙35之產生變得更明顯。 如圖3(b)所示，於第1零件10中，例如，於第1基板10s之上設置分別成為第1焊墊11及另一焊墊12之導電層。於該等導電層之一部分之上設置具有開口部14o之絕緣層14。該情形時，第1焊墊11之平面形狀對應於自絕緣層14之開口部14o露出之導電層之平面形狀。即，第1焊墊11之平面形狀成為設置於第1焊墊11之一部分之上之絕緣層14之開口部14o之平面形狀。對於另一焊墊12而言亦相同。 如圖3(c)所示，於第2零件20中，例如，在第2基板20s之上設置配線21e及配線22e。於該等配線之一部分之上，設置具有開口部23o之絕緣層23。例如，於在開口部23o露出之配線21e之上及絕緣層23之一部分之上，設置第2焊墊21。於在開口部23o露出之配線22e之上及絕緣層23之另一部分之上設置另一焊墊22。 於圖3(c)之例中，第2焊墊21為凹狀。例如，第2焊墊21包含第2中側區域21i及第2外緣區域21o。第2中側區域21i包含第2焊墊21之平面形狀之第2幾何學重心21c。第2外緣區域21o設置於第2中側區域21i之周圍。第2中側區域21i相對於第2外緣區域21o後退。於此種凹狀之焊墊中，容易產生孔隙35。 如圖3(d)所示，於第2零件20中，例如，在第2基板20s之上設置分別成為第2焊墊21及另一焊墊22之導電層。於該等導電層之一部分之上設置具有開口部24o之絕緣層24。該情形時，第2焊墊21之平面形狀對應於自絕緣層24之開口部24o露出之導電層之平面形狀。即，第2焊墊21之平面形狀成為設置於第2焊墊21之一部分之上之絕緣層24之開口部24o之平面形狀。對於另一焊墊22而言亦相同。 圖4(a)～圖4(d)係表示實施形態之電子零件之製造方法中所使用之零件之模式性俯視圖。 該等圖例示焊墊之平面形狀。 如圖4(a)及圖4(b)所示，第1焊墊11之平面形狀係例如沿Z軸方向觀察到之形狀。如圖4(c)及圖4(d)所示，第2焊墊21之平面形狀係例如沿Z軸方向觀察到之形狀。平面形狀例如包含圓形(扁平圓形)。平面形狀例如包含大致四邊形(正方形及長方形等)。角部亦可為曲線狀。 該等平面形狀之幾何學重心成為第1幾何學重心11c及第2幾何學重心21c。 例如，第2步驟(第2動作)中之移動係沿相對於Z軸方向垂直之方向(沿X-Y平面之移動方向D1)進行。將第1焊墊11之平面形狀之沿移動方向D1之長度的最大值設為第1長度L1。將第2焊墊21之平面形狀之沿移動方向D1之長度的最大值設為第2長度L2。 以下，對圖1(f)所例示之第2步驟(第2動作)中之移動之距離之例進行說明。 圖5係表示實施形態之電子零件之製造方法之曲線圖。 圖5之橫軸為第2步驟(第2動作)中之移動之距離Ds(相對值)。移動係沿著沿X-Y平面之移動方向D1進行。距離Ds係以第1長度L1(第1焊墊11之平面形狀之沿移動方向D1之長度的最大值)與第2長度L2(第2焊墊21之平面形狀之沿移動方向D1之長度的最大值)之平均值而標準化。平均值為(L1＋L2)/2。即，距離Ds(相對值)為(“移動之距離(絕對值)”/“平均值”)。該例中，第1焊墊11及第2焊墊21之平面形狀為圓形，各個圓之大小相互相同。 如圖5所示，若距離Ds變大，則孔隙35之量Vb減少。距離Ds為0.6以上時，實質上未產生孔隙35。距離Ds為0.1以上時，孔隙35之量Vb有效地減少。藉由量Vb減少，能夠獲得低電阻。 另一方面，若距離Ds接近1，則例如金屬構件30與焊墊之連接容易變難。例如，距離Ds為0.9以下時，容易獲得良好之連接。進而，距離Ds為0.8以下時，更容易獲得良好之連接。 實施形態中，第2步驟(第2動作)中之移動之距離較佳為例如第1長度L1(第1焊墊11之平面形狀之沿移動方向D1之長度的最大值)與第2長度L2(第2焊墊21之平面形狀之沿移動方向D1之長度的最大值)之平均值(算術平均)之10%以上且90%以下。例如，移動之距離進而較佳為上述平均值之25%以上且75%以下。能夠獲得低電阻及良好之連接。例如，移動之距離進而較佳為上述平均值之40%以上且60%以下。 實施形態中，第1焊墊11之尺寸亦可與第2焊墊21之尺寸不同。 實施形態中，孔隙35之產生得以抑制。藉此，例如能夠提高可靠性。藉由抑制孔隙35之產生，例如能夠抑制發熱，容易獲得良好之動作特性。 圖6(a)～圖6(c)係例示實施形態之電子零件之製造方法之模式性剖視圖。 如圖6(a)所示，該例中，金屬構件30(第1金屬構件31)設置於第1零件10之第1焊墊11。如圖6(a)所示，使第1零件10之第1面10a與第2零件20之第2面20a於第1狀態ST1(於第1焊墊11設置有個體狀之金屬構件30之狀態)下相互對向(第1步驟，第1動作)。 該第1狀態ST1下之第1焊墊11之平面形狀之第1幾何學重心11c與第1狀態ST1下之第2焊墊21之平面形狀之第2幾何學重心21c之間的距離(第1距離d1)相對較大。 如圖6(b)所示，於上述第1步驟(第1動作)之後使金屬構件30熔融。於已熔融之金屬構件30與第1焊墊11及第2焊墊21相接之狀態下，使第1零件10及第2零件20中之至少任一者沿著第1面10a移動(第2步驟，第2動作)。 如圖6(c)所示，於第2步驟(第2動作)之後使金屬構件30成為固體狀。形成第1焊墊11及第2焊墊21藉由固體狀之金屬構件30而相互電性連接之第2狀態ST2(第3步驟，第3動作)。 如圖6(c)所示，第2狀態ST2下之第1幾何學重心11c與第2狀態下之第2幾何學重心21c之間的沿第1面10a之方向上之第2距離d2較第1距離d1短。換言之，第1距離d1較第2距離d2長。藉此，得以抑制孔隙35。藉此，能夠實現低電阻連接。 圖7(a)～圖7(c)係例示實施形態之電子零件之製造方法之模式性剖視圖。 如圖7(a)所示，該例中，金屬構件30之一部分之第1金屬構件31設置於第1零件10之第1焊墊11。金屬構件30之另一部分之第2金屬構件32設置於第2零件20之第2焊墊21。該情形時，亦實施與圖6(a)～圖6(c)相同之第1～第3步驟(第1～第3動作)。孔隙35受到抑制。藉此，能夠實現低電阻連接。 如此，實施形態中，在第1狀態ST1下，金屬構件30包含設置於第1焊墊11之面上及第2焊墊12之面上之任一者之凸塊(第1金屬構件31或第2金屬構件32)(參照圖1(e)及圖6(a))。 實施形態中，於第1狀態ST1下，金屬構件30亦可包含設置於第1焊墊11之面上之第1凸塊(第1金屬構件31)、及設置於第2焊墊21之面上之第2凸塊(第2金屬構件32)(參照圖7(a))。 以下，再次參照圖1(a)～圖1(g)，進一步說明第1零件10及第2零件20之例。 例如，準備成為第2基板20s之12英吋之半導體晶圓。於半導體晶圓形成焊墊(第2焊墊21等)。例如，於半導體晶圓之半導體晶片(例如第2基板20s)之表面，例如藉由濺鍍等而形成Ti/Cu等晶種層(金屬膜)。Ti膜之厚度例如為0.03 μm以上且0.5 μm以下。Cu膜之厚度例如為0.1 μm以上且1.0 μm。晶種層亦可包含Ti、Cu、Ni、Cr、Au及Pd中之至少任一者。晶種層亦可包括包含該等金屬之2對狀之合金。焊墊亦可包含包括該等金屬之複數層膜之複合膜。於成為焊墊之金屬膜之上，形成抗蝕劑(厚度為約80 μm)，且加工成特定之形狀。例如，於與設置於半導體晶片之Al焊墊(未圖示)對應之位置，形成開口(例如100 μm之直徑)。於開口部分，例如藉由電鍍而形成Cu膜(厚度為1 μm以上且10 μm以下，例如5 μm)。例如，Cu膜成為第2焊墊21。 例如，藉由電鍍而於Cu膜之上形成焊料層(例如厚度為約50 μm)。例如，將抗蝕劑剝離，對晶種層(Ti/Cu)進行蝕刻。Cu之蝕刻液例如包含硫酸及H2 O2 。關於Ti之蝕刻液，例如於HF或H2 O2 中添加KOH。對藉由電鍍而形成之焊料塗佈助焊劑之後，進行回流焊。藉此，可獲得金屬構件30(第2金屬構件32)(圖1(b))。 金屬構件30例如包含焊料。焊料例如包含Sn、Pb、Ag、Cu、Ni、Au、Bi、In、Sb、Ge及Zn中之至少任一者。金屬構件30亦可包含包括2種以上該等金屬之合金。金屬構件30亦可包含2種以上該等金屬之複合膜。 實施形態中，第2焊墊21亦可藉由無電鍍而形成於半導體晶片之Al焊墊上。例如，藉由無電鍍而形成Ni/Pd/Au之金屬膜。Ni膜之厚度例如為1 μm以上且5 μm以下。Pd膜之厚度例如為0.01 μm以上且1 μm以下。Au膜之厚度例如為0.01 μm以上且3 μm以下。 亦可藉由於焊墊(例如第2焊墊21)搭載焊球而形成金屬構件30(凸塊)。亦可藉由於焊墊(例如第2焊墊21)印刷焊膏而形成金屬構件30(凸塊)。關於形成於半導體晶片之Al焊墊上之焊墊(第2焊墊21)之形成，可使用例如電鍍法、蒸鍍法及濺鍍法中之至少任一者。 如圖1(c)所示，準備形成有第1焊墊11之第1基板10s(第1零件10)。第1焊墊11例如包含Cu、Ni、Au、Pd及Ag中之至少任一者。第1焊墊11亦可包含包括2種以上該等金屬之合金。第1焊墊11亦可包含包括2種該等金屬之複合膜。第1焊墊11亦可包含包括2種以上該等金屬之積層膜。 第1基板10s(第1零件10)亦可包含例如矽基板、樹脂基板及陶瓷基板中之至少任一者。第1基板10s(第1零件10)亦可包含半導體晶片。 如圖1(d)～圖1(g)所示，第2零件20係例如藉由倒裝接合機(製造裝置110)而覆晶安裝於第1零件10上。亦可於安裝前，在金屬構件30、第1焊墊11及第2焊墊21中之至少任一者塗佈助焊劑。 例如，使第2零件20(例如半導體晶片)之焊料凸塊(第2金屬構件32)與第1零件10之第1焊墊11對位。之後，使第1零件10及第2零件20中之至少任一者移動(偏移)特定量。亦可於搭載時施加荷重。於該狀態(圖1(d)及圖1(e))下，金屬構件30為固體狀。 之後，提高頭部60及平台50中之至少任一者之溫度。藉此，金屬構件30之溫度變得高於金屬構件30之熔點。藉此，金屬構件30熔融。此時，亦可控制Z軸方向之位置，使第1零件10與第2零件20之間之距離實質上固定。 使頭部60及平台50中之至少任一者相對地移動。於金屬構件30熔融之狀態下，使頭部60及平台50之相對位置關係變化。即，使其等移動(參照圖1(f))。藉由於金屬構件30熔融之狀態下使其等移動，而焊料凸塊之形狀穩定。 之後，使頭部60及平台50中之至少任一者之溫度降低。藉此，利用金屬構件30將第1焊墊11與第2焊墊21電性連接(參照圖1(g))。 利用此種方法製作之電子零件中，孔隙35之產生得以抑制。例如利用X射線檢查裝置來觀察電子零件之電性連接部。例如實質上未觀察到孔隙35。 考慮以自特定位置偏移之方式將第2零件20搭載於第1零件10上，並藉由之後之移動，去除焊墊之凹部等中所包含之空氣或助焊劑成分等之至少一部分。藉此，認為孔隙35之產生得以抑制。 實施形態中，亦可於圖1(g)所例示之狀態之後，於第2零件20與第1零件10之間填充樹脂。例如，填充底部填充樹脂。例如填充模具樹脂。亦可於底部填充之後，進而利用模具樹脂覆蓋晶片整體。 由上述步驟製作之電子零件(例如半導體裝置)可獲得較高之可靠性。例如，於溫度循環試驗中，將-55℃(30 min)～25℃(5 min)～125℃(30 min)之溫度變化設為1循環。對於電子零件，於循環3000次後，於連接部位未觀察到斷裂之產生。 於圖1(a)～圖1(g)之例中，例如於半導體晶片側設置焊料凸塊，於基板側設置焊墊，並進行覆晶連接。 於圖6(a)～圖6(c)之例中，例如於半導體晶片側設置焊墊，於基板側設置焊料凸塊，並進行相同製程。 於圖7(a)～圖7(c)之例中，於半導體晶片側及基板側之兩方設置有焊料凸塊，並進行相同製程。 如已作說明般，例如，第1零件10之第1焊墊11及第2零件20之第2焊墊21中之至少任一者亦可為凹狀。於為凹狀之情形時，即便當金屬構件30(例如焊料)之量變動時，亦容易獲得良好之連接。另一方面，於為凹狀之情形時，容易產生孔隙35。實施形態中，於焊墊為凹狀之情形時，亦可抑制孔隙35之產生。 於焊墊為凹狀之情形時，凹狀部之深度例如為0.5 μm以上且50 μm以下。深度為0.5 μm以上時，可使金屬構件30(例如焊料)之量之變動容許範圍較大。若深度超過50 μm，則難以獲得穩定之連接。 圖8(a)及圖8(b)係例示實施形態之電子零件之製造方法之模式性剖視圖。 如圖8(a)所示，該例中，第2零件20包含所積層之複數個半導體晶片(半導體晶片26a～26d)。例如，於基板25之表面積層半導體晶片26a～26d。半導體晶片26a～26d係藉由導線20w而電性連接。亦可於半導體晶片26a～26d彼此之間設置樹脂膜26f等。亦可使用於半導體晶片26a～26d彼此之間設置液狀樹脂並使其硬化所得者。例如，於最上層之半導體晶片(該例中為半導體晶片26d)形成焊料凸塊(金屬構件30)。 該例中，亦進行與關於圖1(d)～圖1(g)進行說明之步驟相同之步驟。 如圖8(b)所示，該例中，第2基板20s包含所積層之複數個半導體晶片(半導體晶片26a～26d)。第2零件20包含設置於第2基板20s中之通孔導電部21v(及通孔導電部22v)。通孔導電部21v與第2焊墊21電性連接。通孔導電部22v與另一焊墊22電性連接。 例如，於基板25之表面，設置具備貫通電極(通孔導電部21v及22v等)之半導體晶片(半導體晶片26a～26d)。亦可於複數個半導體晶片之間設置樹脂。貫通電極(通孔導電部21v及22v等)亦可包含例如Cu、Ni、Au、Ag及焊料中之至少任一者。貫通電極亦可僅貫通半導體部分(例如矽)。該例中，亦可利用凸塊將複數個半導體晶片相互連接。 圖8(a)及圖8(b)之例中，半導體晶片亦可包含例如記憶體晶片、控制晶片、系統LSI(Large Scale Integration，大規模積體電路)、類比IC(Integrated Circuit，積體電路)、數位IC、分立半導體及光半導體中之至少任一者。 該等例中，於上述溫度循環試驗中，循環3000次後，於連接部位未觀察到斷裂之產生。 圖9係例示實施形態之電子零件之製造方法之模式性剖視圖。 圖9所示之例中，第2零件20為半導體封裝。於半導體封裝之面(第2面20a)設置第2焊墊21。第2零件20(半導體封裝)為例如扇入型之晶圓級CSP(Wafer level Chip Size Package，晶圓級晶片尺寸封裝)。第2零件20(半導體封裝)亦可為例如扇出型之晶圓級CSP。 該例中，亦進行與關於圖1(d)～圖1(g)加以說明之步驟相同之步驟。於上述溫度循環試驗中，循環3000次後，於連接部位未觀察到斷裂之產生。 上述內容中，亦可將第1零件10與第2零件20相互調換。 如上所述，第1零件10及第2零件20中之至少任一者亦可包含矽基板、樹脂基板及陶瓷基板中之至少任一者。第1零件10及第2零件20中之至少任一者亦可包含所積層之複數個半導體晶片。第1零件10及第2零件20中之至少任一者亦可包含基板(第1基板10s及第2基板20s等)、及設置於基板中之通孔導電部(通孔導電部21v及22v等)。第1零件10及第2零件20中之至少任一者亦可包含半導體封裝。第1零件10及第2零件20中之至少任一者亦可為如電阻元件、濾波器元件、電容器元件或線圈元件般之非主動零件。 例如，於將半導體晶片之焊料凸塊與基板之焊墊連接時，有於焊料凸塊內產生孔隙35之情形。尤其於使用助焊劑之情形時，孔隙35之產生變得明顯。實施形態中，例如將焊料凸塊與焊墊以偏移之狀態搭載，之後，於平面內進行移動。例如，使其等於焊料熔融之狀態下，朝特定之搭載位置移動。藉此，孔隙35之產生得以抑制。凸塊形狀穩定。例如，溫度循環試驗中之可靠性提高。 根據實施形態，可提供能夠實現低電阻連接之電子零件之製造方法及電子零件之製造裝置。 再者，於本案說明書中，「垂直」及「平行」並非嚴格之垂直及嚴格之平行，例如包含製造步驟中之偏差等，只要實質上垂直及實質上平行便可。 以上，一面參照具體例，一面對本發明之實施形態進行了說明。但是，本發明之實施形態並不限定於該等具體例。例如，關於電子零件之製造裝置中所包含之平台、頭部及控制部、以及電子零件之製造方法中所使用之第1零件、第2零件及金屬構件等各要素之具體構成，只要業者能夠藉由自公知之範圍適當選擇而以相同之方式實施本發明，並獲得相同之效果，則亦包含於本發明之範圍內。 又，將各具體例之任意2個以上之要素於技術上可實現之範圍內組合所得者只要包含本發明之主旨，則亦包含於本發明之範圍內。 此外，以作為本發明之實施形態於上文敍述之電子零件之製造方法及電子零件之製造裝置為基準，業者能適當進行設計變更並實施之全部電子零件之製造方法及電子零件之製造裝置只要包含本發明之主旨，則亦屬於本發明之範圍。 此外，可知只要為業者，便能夠於本發明之思想範疇內想到各種變更例及修正例，該等變更例及修正例亦屬於本發明之範圍。 雖對本發明之若干實施形態進行了說明，但該等實施形態係作為示例而提出，並非意欲限定發明之範圍。該等新穎之實施形態能以其他各種形態加以實施，且可於不脫離發明主旨之範圍內，進行各種省略、替換、變更。該等實施形態或其變化包含於發明之範圍或主旨內，並且包含於申請專利範圍所記載之發明及其均等之範圍內。 [相關申請案] 本申請案主張日本專利申請案2016-49686號(申請日：2016年3月14日)之優先權。該案之全文以引用的方式併入本文中。
10‧‧‧第1零件
10a‧‧‧第1面
10s‧‧‧第1基板
11‧‧‧第1焊墊
11c‧‧‧第1幾何學重心
11e‧‧‧配線
11i‧‧‧第1中側區域
11o‧‧‧第1外緣區域
12‧‧‧焊墊
12e‧‧‧配線
13‧‧‧絕緣層
13o‧‧‧開口部
14‧‧‧絕緣層
14o‧‧‧開口部
20‧‧‧第2零件
20a‧‧‧第2面
20s‧‧‧第2基板
20w‧‧‧導線
21‧‧‧第2焊墊
21c‧‧‧第2幾何學重心
21e‧‧‧配線
21i‧‧‧第2中側區域
21o‧‧‧第2外緣區域
21v‧‧‧通孔導電部
22‧‧‧焊墊
22e‧‧‧配線
22v‧‧‧通孔導電部
23‧‧‧絕緣層
23o‧‧‧開口部
24‧‧‧絕緣層
24o‧‧‧開口部
25‧‧‧基板
26a～26d‧‧‧半導體晶片
26f‧‧‧樹脂膜
30‧‧‧金屬構件
31‧‧‧第1金屬構件
32‧‧‧第2金屬構件
35‧‧‧孔隙
50‧‧‧平台
51‧‧‧第1溫度控制部
52‧‧‧孔
55‧‧‧攝像部
60‧‧‧頭部
61‧‧‧第2溫度控制部
62‧‧‧孔
65‧‧‧支持部
70‧‧‧控制部
110‧‧‧製造裝置
Ds‧‧‧距離
L(L1、L2)‧‧‧最大值
ST1‧‧‧第1狀態
ST2‧‧‧第2狀態
Vb‧‧‧孔隙之量(相對值)
d1‧‧‧第1距離
d2‧‧‧第2距離
圖1(a)～圖1(g)係例示實施形態之電子零件之製造方法之模式性剖視圖。 圖2係例示實施形態之電子零件之製造裝置之模式圖。 圖3(a)～圖3(d)係表示實施形態之電子零件之製造方法中所使用之零件之模式性剖視圖。 圖4(a)～圖4(d)係表示實施形態之電子零件之製造方法中所使用之零件之模式性俯視圖。 圖5係表示實施形態之電子零件之製造方法之曲線圖。 圖6(a)～圖6(c)係例示實施形態之電子零件之製造方法之模式性剖視圖。 圖7(a)～圖7(c)係例示實施形態之電子零件之製造方法之模式性剖視圖。 圖8(a)及圖8(b)係例示實施形態之電子零件之製造方法之模式性剖視圖。 圖9係例示實施形態之電子零件之製造方法之模式性剖視圖。
10‧‧‧第1零件
10a‧‧‧第1面
10s‧‧‧第1基板
11‧‧‧第1焊墊
11c‧‧‧第1幾何學重心
12‧‧‧焊墊
20‧‧‧第2零件
20a‧‧‧第2面
20s‧‧‧第2基板
21‧‧‧第2焊墊
21c‧‧‧第2幾何學重心
22‧‧‧焊墊
30‧‧‧金屬構件
32‧‧‧第2金屬構件
35‧‧‧孔隙
55‧‧‧攝像部
60‧‧‧頭部
62‧‧‧孔
ST1‧‧‧第1狀態
ST2‧‧‧第2狀態
d1‧‧‧第1距離
d2‧‧‧第2距離

Claims (6)

  1. 一種電子零件之製造方法，其係使具有設置有第1焊墊之第1面之第1零件之上述第1面、與具有設置有第2焊墊之第2面之第2零件之上述第2面，以於上述第1焊墊及上述第2焊墊之至少任一者設置有個體狀之金屬構件之第1狀態下相互對向； 使上述金屬構件熔融，且使上述第1零件與上述第2零件接近，直至上述熔融之上述金屬構件與上述第1焊墊及上述第2焊墊相接為止； 於使上述第1零件與上述第2零件接近之後，於上述熔融之上述金屬構件與上述第1焊墊及上述第2焊墊相接之狀態下，使上述第1零件及上述第2零件之至少任一者沿上述第1面移動； 於使上述第1零件及上述第2零件之上述至少任一者移動之後使上述金屬構件成為固體狀，而形成將上述第1焊墊及上述第2焊墊藉由上述固體狀之上述金屬構件相互電性連接之第2狀態；且 上述第1狀態下之上述第1焊墊之平面形狀之第1幾何學重心、與上述第1狀態下之上述第2焊墊之平面形狀之第2幾何學重心之間的沿上述第1面之方向上之第1距離，長於上述第2狀態下之上述第1幾何學重心與上述第2狀態下之上述第2幾何學重心之間的沿上述第1面之方向上之第2距離。
  2. 如請求項1之電子零件之製造方法，其中於上述第1狀態下，上述金屬構件包含設置於上述第1焊墊之面上及上述第2焊墊之面上之任一者之凸塊。
  3. 如請求項1或2之電子零件之製造方法，其中上述第1焊墊包含包括上述第1幾何學重心之第1中側區域、及上述第1中側區域周圍之第1外緣區域，上述第1中側區域相對於上述第1外緣區域後退。
  4. 如請求項1或2之電子零件之製造方法，其中於使上述第1零件及上述第2零件之上述至少任一者移動時，使上述第1零件及上述第2零件之上述至少任一者沿著沿上述第1面之移動方向移動， 上述移動之距離係上述第1焊墊之上述平面形狀之沿上述移動方向之長度之最大值、與上述第2焊墊之上述平面形狀之沿上述移動方向之長度之最大值的平均值的10%以上且90%以下。
  5. 如請求項1或2之電子零件之製造方法，其包含：於使上述第1零件及上述第2零件之上述至少任一者移動時，以頭部保持上述第1零件，使上述第1零件沿上述第1面移動。
  6. 一種電子零件之製造裝置，其具備： 平台，其供載置具有設置有第1焊墊之第1面之第1零件； 頭部，其可保持具有設置有第2焊墊之第2面之第2零件；及 控制部，其控制上述平台及上述頭部之相對位置、及上述平台及上述頭部之至少任一者之溫度；且 上述控制部使上述平台及上述頭部之至少任一者實施如下動作： 使上述第1面與上述第2面係在於上述第1焊墊及上述第2焊墊之至少任一者設置有個體狀之金屬構件之第1狀態下相互對向； 使上述金屬構件熔融，且使上述第1零件與上述第2零件接近，直至上述熔融之上述金屬構件與上述第1焊墊及上述第2焊墊相接為止； 於使上述第1零件與上述第2零件接近之動作之後，於上述熔融之上述金屬構件與上述第1焊墊及上述第2焊墊相接之狀態下，使上述第1零件及上述第2零件之至少任一者沿上述第1面移動；及 於使上述第1零件及上述第2零件之上述至少任一者移動之動作之後使上述金屬構件成為固體狀，而形成將上述第1焊墊及上述第2焊墊藉由上述固體狀之上述金屬構件相互電性連接之第2狀態；且 上述第1狀態下之上述第1焊墊之平面形狀之第1幾何學重心、與上述第1狀態下之上述第2焊墊之平面形狀之第2幾何學重心之間的沿上述第1面之方向上之第1距離，長於上述第2狀態下之上述第1幾何學重心與上述第2狀態下之上述第2幾何學重心之間的沿上述第1面之方向上之第2距離。
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