JP2007059600A - 部品実装方法および部品実装体 - Google Patents
部品実装方法および部品実装体 Download PDFInfo
- Publication number
- JP2007059600A JP2007059600A JP2005242691A JP2005242691A JP2007059600A JP 2007059600 A JP2007059600 A JP 2007059600A JP 2005242691 A JP2005242691 A JP 2005242691A JP 2005242691 A JP2005242691 A JP 2005242691A JP 2007059600 A JP2007059600 A JP 2007059600A
- Authority
- JP
- Japan
- Prior art keywords
- wiring board
- solder
- component mounting
- layer
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 59
- 229910000679 solder Inorganic materials 0.000 claims abstract description 78
- 229920005989 resin Polymers 0.000 claims abstract description 77
- 239000011347 resin Substances 0.000 claims abstract description 77
- 230000004907 flux Effects 0.000 claims abstract description 48
- 239000004020 conductor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 abstract description 57
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 34
- 230000008569 process Effects 0.000 abstract description 16
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000005406 washing Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 70
- 239000010410 layer Substances 0.000 description 60
- 238000007747 plating Methods 0.000 description 17
- 239000010949 copper Substances 0.000 description 15
- 239000010931 gold Substances 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 150000001879 copper Chemical class 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000013007 heat curing Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- WXTMDXOMEHJXQO-UHFFFAOYSA-N 2,5-dihydroxybenzoic acid Chemical compound OC(=O)C1=CC(O)=CC=C1O WXTMDXOMEHJXQO-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229930185605 Bisphenol Natural products 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- FFFPYJTVNSSLBQ-UHFFFAOYSA-N Phenolphthalin Chemical compound OC(=O)C1=CC=CC=C1C(C=1C=CC(O)=CC=1)C1=CC=C(O)C=C1 FFFPYJTVNSSLBQ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 229960003280 cupric chloride Drugs 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 235000011837 pasties Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
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- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
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- H01G2/06—Mountings specially adapted for mounting on a printed-circuit support
- H01G2/065—Mountings specially adapted for mounting on a printed-circuit support for surface mounting, e.g. chip capacitors
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- H01L2224/035—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
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- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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Abstract
【解決手段】 接合面に接合パッド18を有する半導体チップ11を配線基板21上に実装する部品実装方法であって、接合パッド18を覆うはんだ層12と、当該はんだ層12の上に設けられたフラックス機能を有する樹脂層19とを備えた半導体チップ11を準備する工程と、上記接合パッド18に接合される銅核26が実装面に形成された配線基板21を準備する工程と、半導体チップ11を配線基板21上にマウントし、銅核26をフラックス樹脂膜19に貫通させてはんだ層12をリフローする工程とを有する。
【選択図】 図6
Description
Claims (7)
- 接合面に電極端子を有する表面実装型の電子部品を配線基板上に実装する部品実装方法であって、
前記電極端子を覆うはんだ層と、前記はんだ層の上に設けられたフラックス機能を有する樹脂層とを備えた電子部品を準備する工程と、
前記電極端子に接合される凸型導体が実装面に形成された配線基板を準備する工程と、
前記電子部品を前記配線基板上にマウントし、前記凸型導体を前記樹脂層に貫通させて前記はんだ層をリフローする工程とを有する
ことを特徴とする部品実装方法。 - 前記電極端子と前記凸型導体とを接合した後、前記電子部品と前記配線基板との間にアンダーフィル樹脂層を形成する工程を有する
ことを特徴とする請求項1に記載の部品実装方法。 - 前記凸型導体の頂部の幅寸法を前記電極端子の幅寸法の30%以上80%以下とする
ことを特徴とする請求項1に記載の部品実装方法。 - 前記配線基板を準備する工程は、
基板表面の配線層に絶縁膜を形成する工程と、
前記絶縁膜にビアを形成する工程と、
前記絶縁膜の上に導体層を形成する工程と、
前記導体層をエッチングして前記ビアの上に凸型導体を形成する工程とを有する
ことを特徴とする請求項1に記載の部品実装方法。 - 前記はんだ層は、リフロー時に前記凸型導体の周囲にまで濡れ広がるはんだ量で形成されている
ことを特徴とする請求項1に記載の部品実装方法。 - 前記樹脂層は、前記はんだ層のリフロー時に軟化して、前記凸型導体の少なくとも頂部を取り囲む高さ位置まで垂れ下がる
ことを特徴とする請求項1に記載の部品実装方法。 - 接合面に電極端子を有する電子部品と、
前記電極端子にはんだ接合される凸型導体が実装面に形成された配線基板と、
前記電極端子の周囲に形成された第1の樹脂層と、
前記電子部品と前記配線基板との間に充填された第2の樹脂層とを備えた
ことを特徴とする部品実装体。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2005242691A JP4305430B2 (ja) | 2005-08-24 | 2005-08-24 | 部品実装方法および部品実装体 |
US11/499,358 US20070057022A1 (en) | 2005-08-24 | 2006-08-04 | Component mounting method and component-mounted body |
CNB2006101214817A CN100437959C (zh) | 2005-08-24 | 2006-08-24 | 元件安装方法及安装了元件的主体 |
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Application Number | Priority Date | Filing Date | Title |
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JP2005242691A JP4305430B2 (ja) | 2005-08-24 | 2005-08-24 | 部品実装方法および部品実装体 |
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Publication Number | Publication Date |
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JP2007059600A true JP2007059600A (ja) | 2007-03-08 |
JP4305430B2 JP4305430B2 (ja) | 2009-07-29 |
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US (1) | US20070057022A1 (ja) |
JP (1) | JP4305430B2 (ja) |
CN (1) | CN100437959C (ja) |
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JP2010027768A (ja) * | 2008-07-17 | 2010-02-04 | Toyoda Gosei Co Ltd | 発光装置及び発光装置の製造方法 |
US10660216B1 (en) | 2018-11-18 | 2020-05-19 | Lenovo (Singapore) Pte. Ltd. | Method of manufacturing electronic board and mounting sheet |
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US8378485B2 (en) * | 2009-07-13 | 2013-02-19 | Lsi Corporation | Solder interconnect by addition of copper |
US9142533B2 (en) * | 2010-05-20 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Substrate interconnections having different sizes |
US9355986B2 (en) * | 2012-02-14 | 2016-05-31 | Mitsubishi Materials Corporation | Solder joint structure, power module, power module substrate with heat sink and method of manufacturing the same, and paste for forming solder base layer |
US9425136B2 (en) | 2012-04-17 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Conical-shaped or tier-shaped pillar connections |
US9299674B2 (en) | 2012-04-18 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump-on-trace interconnect |
US9111817B2 (en) | 2012-09-18 | 2015-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bump structure and method of forming same |
US9699914B2 (en) * | 2014-10-20 | 2017-07-04 | Averatek Corporation | Patterning of electroless metals by selective deactivation of catalysts |
EP3730671A4 (en) * | 2017-12-19 | 2021-08-18 | JX Nippon Mining & Metals Corporation | SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING THEREOF |
JP6772232B2 (ja) * | 2018-10-03 | 2020-10-21 | キヤノン株式会社 | プリント回路板及び電子機器 |
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US5864178A (en) * | 1995-01-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Semiconductor device with improved encapsulating resin |
US5704116A (en) * | 1996-05-03 | 1998-01-06 | Motorola, Inc. | Method of holding a component using an anhydride fluxing agent |
TW383435B (en) * | 1996-11-01 | 2000-03-01 | Hitachi Chemical Co Ltd | Electronic device |
JP2962351B2 (ja) * | 1997-03-31 | 1999-10-12 | 日本電気株式会社 | 半導体チップへの接合構造及びそれを用いた半導体装置 |
JPH10284635A (ja) * | 1997-04-07 | 1998-10-23 | Hitachi Ltd | 半導体装置 |
US6399178B1 (en) * | 1998-07-20 | 2002-06-04 | Amerasia International Technology, Inc. | Rigid adhesive underfill preform, as for a flip-chip device |
JP2000124576A (ja) * | 1999-10-25 | 2000-04-28 | Hokuriku Electric Ind Co Ltd | 回路基板 |
JP4186756B2 (ja) * | 2003-08-29 | 2008-11-26 | 松下電器産業株式会社 | 回路基板及びその製造方法 |
JP2002009423A (ja) * | 2000-06-20 | 2002-01-11 | Matsushita Electric Ind Co Ltd | 電子部品の実装方法および実装体 |
JP2003105054A (ja) * | 2001-09-28 | 2003-04-09 | Sumitomo Bakelite Co Ltd | 液状封止樹脂組成物及び半導体装置 |
JP3829325B2 (ja) * | 2002-02-07 | 2006-10-04 | 日本電気株式会社 | 半導体素子およびその製造方法並びに半導体装置の製造方法 |
JP4200273B2 (ja) * | 2002-07-12 | 2008-12-24 | パナソニック株式会社 | 実装基板の製造方法 |
JP2004281491A (ja) * | 2003-03-13 | 2004-10-07 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2005
- 2005-08-24 JP JP2005242691A patent/JP4305430B2/ja not_active Expired - Fee Related
-
2006
- 2006-08-04 US US11/499,358 patent/US20070057022A1/en not_active Abandoned
- 2006-08-24 CN CNB2006101214817A patent/CN100437959C/zh not_active Expired - Fee Related
Cited By (2)
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JP2010027768A (ja) * | 2008-07-17 | 2010-02-04 | Toyoda Gosei Co Ltd | 発光装置及び発光装置の製造方法 |
US10660216B1 (en) | 2018-11-18 | 2020-05-19 | Lenovo (Singapore) Pte. Ltd. | Method of manufacturing electronic board and mounting sheet |
Also Published As
Publication number | Publication date |
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CN100437959C (zh) | 2008-11-26 |
JP4305430B2 (ja) | 2009-07-29 |
US20070057022A1 (en) | 2007-03-15 |
CN1921080A (zh) | 2007-02-28 |
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