JP5085932B2 - 実装体及びその製造方法 - Google Patents
実装体及びその製造方法 Download PDFInfo
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- JP5085932B2 JP5085932B2 JP2006520620A JP2006520620A JP5085932B2 JP 5085932 B2 JP5085932 B2 JP 5085932B2 JP 2006520620 A JP2006520620 A JP 2006520620A JP 2006520620 A JP2006520620 A JP 2006520620A JP 5085932 B2 JP5085932 B2 JP 5085932B2
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Description
本発明の第2の実装体は、素子電極が形成された表面と、前記表面に対向する裏面とを有する半導体素子と、電極端子を有する配線パターンが形成された実装基板とを含む実装体であって、前記半導体素子の裏面は、前記実装基板に接しており、前記半導体素子の前記素子電極と、前記実装基板に形成された前記配線パターンの前記電極端子とは、半田粒子が集合してブリッジ状に成形された半田接合体によって電気的に接続されており、さらに、電極パターンが形成された対向基板を含み、前記実装基板の一部には、凹部が形成され、前記凹部の底面に前記半導体素子の前記裏面が接しており、前記電極パターンは、前記半田接合体を挟んで前記半導体素子の上に配置されていることを特徴とする。
まず、図1を参照しながら、本発明の実施形態に係る実装体について説明する。図1は本実施形態の実装体100の断面構成を模式的に示している。
図4に示した実装体100では、基板40の電極パターン42の表面に、半田濡れ性を向上させる層43が形成されている。すなわち、この例では、電極パターン42の表面に、半田濡れ性を向上させるコーティング処理が施されている。電極パターン42の表面の半田濡れ性を向上させることにより、半田接合体20の自己集合的な形成をより容易に又はより安定して実行することができる。半田濡れ性を向上させるコーティングとしては、例えば、半田メッキ層であるSnBi層の形成を挙げることができる。
図5に示した実装体100では、電極パターン42の表面の一部にマスク層45が形成されており、半田接合体20は、素子電極12と電極パターン42との間を連結する半田バンプ部20aと、電極端子32と電極パターン42との間を連結する半田バンプ部20bとから構成されている。半田接合体20が素子電極12と電極端子32とを直接接続しなくても、この例のように、電極パターン42を介して、素子電極12と電極端子32とを電気的に接続することもできる。マスク層45は、電極パターン42よりも半田濡れ性が悪い材料からなり、例えばソルダーレジストから構成されている。電極パターン42の表面のうち、素子電極12に対応する部位と電極端子32に対応する部位との間に、マスク層45を形成することにより、図5に示すように、半田接合体20は2つの部位(20a、20b)に分かれるが、これにより、半田接合体20の形状の予測性が上がり、その特性(抵抗、応力、強度など)の予測が楽になるというメリットを享受し得る。
図7に示した実装体100では、基板40が除去されて、電極パターン42が表面に露出している。基板40の除去は、基板40を剥離して実行してもよいし、基板40を研磨して実行してもよい。電極パターン42が露出していることにより、これを検査用端子として利用することが可能となる。また、図7に示した実装体100の樹脂25を取り除いて、図8に示す構造にすることもできる。
図8及び図10に示した実装体100では、素子電極12と電極端子32との間を空気絶縁しているが、素子電極12と電極端子32との間に樹脂25を存在させて絶縁性を高めてもよい。なお、図11に示すように、半田接合体20の上面を、平面でなく、若干曲線を持たせてもよい。これは、図8に示した構造に対し、短時間、熱処理(例えば、リフロー処理)を行い、半田接合体20を少しだけ溶融させて、より応力を緩和できる形状に変形させたものである。
図12に示した実装体100では、実装基板30の上面30aが平坦な典型的な基板上に半導体素子10を載置した構成を示している。この場合、素子電極12の上面と、電極端子32の上面との段差を少なくして半田接合体20の自己集合形成がより容易に実行できるように、半導体素子10として薄型の半導体チップを用いることが好ましい。その場合の半導体素子10の厚さは、150μm以下であり、好ましくは100μm程度である。なお、半導体素子10の厚さが150μmを超えるもの(例えば200〜450μm程度)であっても、問題なく半田接合体20の自己集合形成を行うことができる。
次に、図19及び図20を参照しながら、本実施形態の実装体100における半田接合体20の自己集合形成状態を説明する。
Claims (10)
- 素子電極が形成された表面と、前記表面に対向する裏面とを有する半導体素子と、
電極端子を有する配線パターンが形成された実装基板とを含む実装体であって、
前記半導体素子の裏面は、前記実装基板に接しており、
前記半導体素子の前記素子電極と、前記実装基板に形成された前記配線パターンの前記電極端子とは、半田粒子が集合してブリッジ状に成形された半田接合体によって電気的に接続されており、
さらに、電極パターンが形成された対向基板を含み、
前記対向基板の反対面には前記電極パターンとは別の電極パターン、またはシールド層が形成されており、
前記電極パターンは、前記半田接合体を挟んで前記半導体素子の上に配置されていることを特徴とする実装体。 - 素子電極が形成された表面と、前記表面に対向する裏面とを有する半導体素子と、
電極端子を有する配線パターンが形成された実装基板とを含む実装体であって、
前記半導体素子の裏面は、前記実装基板に接しており、
前記半導体素子の前記素子電極と、前記実装基板に形成された前記配線パターンの前記電極端子とは、半田粒子が集合してブリッジ状に成形された半田接合体によって電気的に接続されており、
さらに、電極パターンが形成された対向基板を含み、
前記実装基板の一部には、凹部が形成され、前記凹部の底面に前記半導体素子の前記裏面が接しており、
前記電極パターンは、前記半田接合体を挟んで前記半導体素子の上に配置されていることを特徴とする実装体。 - 前記対向基板は、透光性基板である請求項1または2に記載の実装体。
- 前記対向基板は、フレキシブル基板である請求項1または2に記載の実装体。
- 前記実装基板の上面と、前記半導体素子の前記表面とは、略同一面上に位置する請求項2に記載の実装体。
- 前記半導体素子は、厚さ100μm以下の薄型半導体チップである請求項1または2に記載の実装体。
- 前記半田接合体は、樹脂の中に埋設されている請求項1または2に記載の実装体。
- 前記樹脂の上面は、略平面となっている、請求項7に記載の実装体。
- 前記素子電極と前記電極端子とは、前記電極パターンを介して、電気的に接続されている、請求項1または2に記載の実装体。
- 前記樹脂は透光性樹脂である請求項7に記載の実装体。
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JP4402718B2 (ja) * | 2005-05-17 | 2010-01-20 | パナソニック株式会社 | フリップチップ実装方法 |
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JP4489106B2 (ja) * | 2007-08-27 | 2010-06-23 | 日本テキサス・インスツルメンツ株式会社 | 不良解析装置 |
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JP2013074054A (ja) * | 2011-09-27 | 2013-04-22 | Renesas Electronics Corp | 電子装置、配線基板、及び、電子装置の製造方法 |
JP6208414B2 (ja) * | 2012-07-26 | 2017-10-04 | 昭和電工株式会社 | 半田熱処理用治具 |
US9123708B2 (en) * | 2013-03-01 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor chip package |
JP6182928B2 (ja) * | 2013-03-27 | 2017-08-23 | セイコーエプソン株式会社 | 半導体装置 |
JP6238121B2 (ja) * | 2013-10-01 | 2017-11-29 | ローム株式会社 | 半導体装置 |
US10032699B1 (en) * | 2014-04-28 | 2018-07-24 | Amkor Technology, Inc. | Flip chip self-alignment features for substrate and leadframe applications |
JP6085031B2 (ja) * | 2014-07-22 | 2017-02-22 | 積水化学工業株式会社 | 接続構造体の製造方法 |
KR20190116167A (ko) * | 2019-09-04 | 2019-10-14 | 삼성전기주식회사 | 적층형 전자 부품 |
US20220030721A1 (en) * | 2021-07-02 | 2022-01-27 | Panasonic Intellectual Property Management Co., Ltd. | Mounting method and mounting structure formed by the same |
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JPWO2007096946A1 (ja) | 2009-07-09 |
US8039307B2 (en) | 2011-10-18 |
CN100573840C (zh) | 2009-12-23 |
US7713787B2 (en) | 2010-05-11 |
CN101164151A (zh) | 2008-04-16 |
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