JP4396533B2 - 実装体の製造方法 - Google Patents
実装体の製造方法 Download PDFInfo
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- JP4396533B2 JP4396533B2 JP2005015076A JP2005015076A JP4396533B2 JP 4396533 B2 JP4396533 B2 JP 4396533B2 JP 2005015076 A JP2005015076 A JP 2005015076A JP 2005015076 A JP2005015076 A JP 2005015076A JP 4396533 B2 JP4396533 B2 JP 4396533B2
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- substrate
- electrode
- solder
- resin
- semiconductor element
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/82001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] involving a temporary auxiliary member not forming part of the bonding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Description
12 素子電極
20 半田部材
20a,20b 半田バンプ部
21 半田樹脂ペースト
25 樹脂
27 対流
30 実装基板
32 電極端子
35 配線パターン
37 凹部
40 基板
42 電極パターン
43 半田濡れ性向上層
45 マスク層
100 実装体
110 半導体素子
112 素子電極
120 フィルム
122 配線
125 配線パターン
130 基板
132 配線パターン
210 回路基板
211 接続端子
212 対流添加剤
213 樹脂
220 半導体チップ
221 電極端子
222 半田バンプ
500 半導体モジュール
600 半導体デバイス
700 半導体装置
1000 半導体装置
Claims (7)
- 素子電極が形成された表面と、前記表面に対向する裏面とを有する半導体素子の当該裏面を、電極端子を有する配線パターンが形成された実装基板上に配置する工程(a)と、
樹脂中に、半田粉と、当該樹脂が加熱されたときに沸騰する対流添加剤とが含有された半田樹脂ペーストを、前記素子電極および前記電極端子を含む領域に付与する工程(b)と、
電極パターンが形成された第1面と、前記第1面に対向する第2面とを有する基板を用意し、前記基板の前記電極パターンが前記素子電極および前記電極端子を覆うように、前記基板の第1面を、前記半田樹脂ペーストを挟んで、前記半導体素子の前記表面および前記実装基板と対向させる工程(c)と、
前記半田樹脂ペーストを加熱することにより、前記対流添加剤を沸騰させて前記樹脂に対流を発生させ、そして、前記半田樹脂ペースト中の前記半田粉を自己集合させて、少なくとも、前記素子電極と前記電極パターンとの間と、前記電極端子と電極パターンとの間とを連結する半田部材を形成する工程(d)と
を包含する、実装体の製造方法。 - 前記工程(d)において、前記半田部材は、前記電極パターンに沿って延びる部位を有している、請求項1に記載の実装体の製造方法。
- 前記基板は透光性基板で、そして、前記半田樹脂ペーストを構成する前記樹脂は透光性樹脂であり、
前記工程(d)の後、前記半田部材の接続確認を実行する、請求項1に記載の実装体の製造方法。 - 前記工程(d)の後、前記基板の除去を実行する、請求項1に記載の実装体の製造方法。
- 前記基板の除去の後、前記電極パターンを通して電気的検査を実行する、請求項4に記載の実装体の製造方法。
- 前記工程(c)で用意する前記基板の前記電極パターンの表面には、半田濡れ性を向上させるコーティング処理が施されている、請求項1に記載の実装体の製造方法。
- 前記実装基板はフレキシブル基板であり、そして、前記基板もフレキシブル基板であり、
前記半導体素子は、厚さ100μm以下の薄型半導体チップである、請求項1から3の何れか一つに記載の実装体の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005015076A JP4396533B2 (ja) | 2005-01-24 | 2005-01-24 | 実装体の製造方法 |
Applications Claiming Priority (1)
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JP2005015076A JP4396533B2 (ja) | 2005-01-24 | 2005-01-24 | 実装体の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2006203096A JP2006203096A (ja) | 2006-08-03 |
JP4396533B2 true JP4396533B2 (ja) | 2010-01-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005015076A Expired - Fee Related JP4396533B2 (ja) | 2005-01-24 | 2005-01-24 | 実装体の製造方法 |
Country Status (1)
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JP (1) | JP4396533B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2007096946A1 (ja) * | 2006-02-21 | 2009-07-09 | パナソニック株式会社 | 実装体及びその製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4946262B2 (ja) * | 2006-08-18 | 2012-06-06 | 富士通セミコンダクター株式会社 | 半導体素子の実装方法及び半導体装置の製造方法 |
JP5471163B2 (ja) * | 2009-08-25 | 2014-04-16 | 住友ベークライト株式会社 | 半導体装置の製造方法 |
JP7310571B2 (ja) * | 2019-11-28 | 2023-07-19 | 株式会社デンソー | 半導体装置 |
-
2005
- 2005-01-24 JP JP2005015076A patent/JP4396533B2/ja not_active Expired - Fee Related
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2007096946A1 (ja) * | 2006-02-21 | 2009-07-09 | パナソニック株式会社 | 実装体及びその製造方法 |
JP5085932B2 (ja) * | 2006-02-21 | 2012-11-28 | パナソニック株式会社 | 実装体及びその製造方法 |
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Publication number | Publication date |
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JP2006203096A (ja) | 2006-08-03 |
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