CN111883443A - 封装结构中的可变互连接头 - Google Patents

封装结构中的可变互连接头 Download PDF

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Publication number
CN111883443A
CN111883443A CN202010734386.4A CN202010734386A CN111883443A CN 111883443 A CN111883443 A CN 111883443A CN 202010734386 A CN202010734386 A CN 202010734386A CN 111883443 A CN111883443 A CN 111883443A
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China
Prior art keywords
package
solder paste
package assembly
forming
assembly
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CN202010734386.4A
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English (en)
Inventor
郭炫廷
刘重希
林修任
陈宪伟
郑明达
陈威宇
曹智强
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Publication of CN111883443A publication Critical patent/CN111883443A/zh
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Abstract

本发明提供了封装结构中的可变互连接头。一种实施例方法，包括分析第一封装组件和第二封装组件的翘曲特性并且在第一封装组件上形成多个焊料膏元件。多个焊料膏元件中的每一个的体积基于第一封装组件和第二封装组件的翘曲特性。方法还包括将设置在第二封装组件上的多个连接件对准第一封装件上的多个焊料膏元件，并且通过回流多个连接件和多个焊料膏元件将第二封装组件接合至第一封装组件。

Description

封装结构中的可变互连接头
本申请是于2015年11月9日提交的申请号为201510756123.2，名称为“封装结构中的可变互连接头”的分案申请。
技术领域
本发明涉及封装结构中的可变互连接头。
背景技术
由于各种电子组件(例如，晶体管、二极管、电阻器、电容器等)的集成密度的不断提高，半导体行业已经历了快速发展。在极大程度上，集成密度的提高源自于最小部件尺寸的不断减小(例如，将半导体工艺节点向亚20nm节点减小)，这样允许在给定区域内集成更多的组件。由于对小型化的需要，近来已经发展了更高速度和更大的带宽以及更低的功耗和延迟，所以已经提出一种更小且更富创造性的半导体管芯封装技术的需要。
随着半导体技术的进一步发展，例如3D集成电路(3DIC)的堆叠半导体器件已作为一种进一步降低半导体器件的物理尺寸的有效选择而出现。在堆叠半导体器件中，将诸如逻辑、存储、处理器电路等的有源电路制造在不同的半导体晶圆上。两个或更多的半导体组件可以彼此堆叠安装以进一步降低半导体器件的形状因数。
两个半导体组件可以通过合适的接合技术接合在一起。通常使用的接合技术包括直接接合、化学活化接合、等离子体活化接合、阳极接合、共晶接合、玻璃介质接合、粘连接合、热压缩接合、反应接合等。可以在堆叠的半导体晶圆之间提供电连接。堆叠的半导体器件可提供具有较小形状因数的较高密度且考虑到增强的性能和较低的功耗。
发明内容
为解决现有技术中存在的问题，根据本发明的一个方面，提供了一种方法，包括：
分析第一封装组件和第二封装组件的翘曲特性；
在所述第一封装组件上形成多个焊料膏元件，其中，所述多个焊料膏元件中的每一个的体积基于所述第一封装组件和所述第二封装组件的所述翘曲特性；
将设置在所述第二封装组件上的多个连接件对准所述第一封装件上的所述多个焊料膏元件；以及
通过回流所述多个连接件和所述多个焊料膏元件将所述第二封装组件接合至所述第一封装组件。
根据本发明的一个实施例，形成所述多个焊料膏元件包括模板印刷工艺，所述模板印刷工艺使用包括多个通孔的模板。
根据本发明的一个实施例，还包括基于所述第一封装组件和所述第二封装组件的所述翘曲特性选择所述多个通孔中的每一个的尺寸。
根据本发明的一个实施例，分析所述第一封装组件和所述第二封装组件的所述翘曲特性包括：在将所述第二封装组件接合至所述第一封装组件之后，估测多个区域处的所述第一封装组件和所述第二封装组件之间的距离。
根据本发明的一个实施例，形成所述多个焊料膏元件包括：
在所述第一封装组件的第一区域形成具有第一体积的第一焊料膏元件；以及
在所述第一封装组件的第二区域形成具有第二体积的第二焊料膏元件，其中，所述第一体积大于所述第二体积，并且其中，在所述第一区域中的所述第一封装组件和所述第二封装组件之间的估测距离大于在所述第二区域中的估测距离。
根据本发明的一个实施例，分析所述翘曲特性包括摩尔测量具有与所述第一封装组件和所述第二封装组件相同配置的样本封装组件。
根据本发明的一个实施例，所述第一封装组件是扇出晶圆，并且其中所述第二封装组件是器件管芯。
根据本发明的一个实施例，还包括：在回流所述多个连接件和所述多个焊料膏元件之后，在所述第一封装组件和所述第二封装组件之间形成填充物。
根据本发明的另一方面，提供了一种方法，包括：
分析第一封装组件的翘曲特性，其中，分析所述翘曲特性包括当所述第一封装组件接合至第二封装组件时，估测所述第一封装组件和所述第二封装组件之间的距离；
基于所述第一封装组件的所述翘曲特性配置焊料膏模板；以及
通过使用所述焊料膏模板的模板印刷在所述第一封装组件的表面上形成多个焊料膏元件，其中，所述多个焊料膏元件的尺寸不一。
根据本发明的一个实施例，还包括：
将所述第二封装组件上的多个焊料球对准所述多个焊料膏元件；以及
回流所述多个焊料球和所述多个焊料膏元件以形成将所述第一封装组件接合至所述第二封装组件的多个连接件，其中，所述多个连接件的尺寸不一。
根据本发明的一个实施例，所述焊料膏模板包括多个通孔，其中，所述方法还包括：配置所述焊料膏模板包括基于所述第一封装组件的所述翘曲特性选择所述多个通孔中的每一个的尺寸。
根据本发明的一个实施例，基于所述第一封装组件的所述翘曲特性选择所述多个通孔中的每一个的尺寸包括：设置在第一位置的第一通孔的尺寸选择为大于设置在第二位置的第二通孔的尺寸，并且其中，在所述第一位置处的所述第一封装组件和所述第二封装组件之间的距离大于在所述第二位置处的所述第一封装组件和所述第二封装组件之间的距离。
根据本发明的一个实施例还包括，使用具有和所述焊料膏模板相同配置的一个或多个焊料膏模板以在多个第一封装组件上形成焊料膏元件，其中，所述多个第一封装组件的每一个包括和所述第一封装组件相同的配置。
根据本发明的一个实施例，还包括，将所述多个第一封装组件的每一个接合至多个第二封装组件的对应的一个，其中，所述多个第二封装组件中的每一个包括和所述第二封装组件相同的配置。
根据本发明的一个实施例，还包括使用附加的焊料膏模板在第三封装组件的表面上形成多个附加的焊料膏元件，其中，所述第三封装组件包括和所述第一封装组件不同的配置，并且其中所述附加的焊料膏模板包括和所述焊料膏模板不同的配置。
根据本发明的一个实施例，分析所述第一封装组件的所述翘曲特性包括生成样本封装组件的地形曲线，所述样本封装组件具有和所述第一封装组件相同的配置。
根据本发明的又一方面，提供了一种封装结构，包括：
第一封装组件；
第二封装组件；以及
多个连接件，将所述第一封装组件的第一表面接合至所述第二封装组件的第二表面，其中，所述多个连接件的尺寸不一，并且其中根据所述第一封装组件和所述第二封装组件的翘曲特性选择所述多个连接件中的每一个的尺寸。
根据本发明的一个实施例，所述第一封装组件的所述第一表面和所述第二封装组件的所述第二表面不平坦。
根据本发明的一个实施例，所述多个连接件包括：
第一连接件，设置在所述封装结构的第一区域；以及
第二连接件，设置在所述封装结构的第二区域，其中，所述第一连接件大于所述第二连接件，并且在所述第一区域中的所述第一表面和所述第二表面之间的距离大于在所述第二区域中的所述第一表面和所述第二表面之间的距离。
根据本发明的一个实施例，所述第一封装组件是第一器件管芯，并且其中所述第二封装组件是包括第二器件管芯和扇出再分配层的扇出封装件。
附图说明
当结合附图进行阅读时，根据下面详细的描述可以更好地理解本发明的各方面。应该强调的是，根据工业中的标准实践，没有按比例绘制各种部件。实际上，为了清楚地讨论，各种部件和尺寸可以被任意增加或减小。
图1示出了根据一些实施例的第一封装组件的截面图。
图2示出了根据一些实施例的第二封装组件的截面图。
图3示出了根据一些实施例的用于分析封装组件的翘曲特性的系统。
图4A、图4B和图4C示出了根据一些实施例的形成封装组件上方的焊料膏层，以及形成用于形成焊料膏层的焊料膏模板的不同的视图。
图5和图6示出了根据一些实施例的接合两个封装组件的不同的视图。
图7示出了根据一些实施例的用于接合两个封装组件的流程图。
具体实施方式
以下公开内容提供了许多用于实现主题的不同特征的不同实施例或实例。下面描述了组件和布置的具体实例以简化本发明。当然，这些仅仅是实例，而不旨在限制本发明。例如，在以下描述中，在第二部件上方或者第二部件上形成第一部件可以包括以直接接触的方式形成第一部件和第二部件的实施例，并且也可以包括在第一部件和第二部件之间可以形成附加部件，使得第一部件和第二部件可以不直接接触的实施例。此外，本发明可在各个实例中重复参考标号和/或字母。该重复是为了简单和清楚的目的，并且其本身并没有规定所讨论的各个实施例和/或配置之间的关系。
而且，为了便于描述，诸如“下面”、“之下”、“下部”、“之上”、“上部”等的空间关系术语在此可以用于描述如图所示的一个元件或部件与另一个(或另一些)元件或部件的关系。除了图中所示的定向之外，空间关系术语旨在包括器件在使用或操作过程中的不同定向。装置可以以其他方式定向(旋转90度或为其他定向)，并且在此使用的空间关系描述符可以同样地作出相应的解释。
各个实施例以一个特定的文本进行描述，即，将半导体器件管芯接合至具有扇出再分配层的集成扇出晶圆。然而，实施例可以应用于接合任意两个封装组件。例如，各种实施例可以用于将器件管芯、器件晶圆、扇出封装件、封装衬底、插件、印刷电路板、主板等接合至另一个器件管芯、器件晶圆、扇出封装件、封装衬底、插件、印刷电路板、主板等。
各个实施例包括两个半导体组件，这两个半导体组件使用具有各种尺寸的连接件接合在一起。一个实施例封装件包括接合至第二封装组件(例如，集成扇出晶圆)的第一封装组件(例如，器件管芯)。在接合过程中，通常在回流工艺过程中施加热量，其可以导致封装组件的翘曲。因此，在封装件的不同区域中，两个封装组件之间的距离可以变化。在一个实施例中，接合封装组件的单独的连接件被配置为具有变化的尺寸。例如，在两个封装组件设置得较远的区域使用较大的连接件，而在两个封装组件设置得较近的区域使用较小的连接件。通过配置连接件的变化的尺寸，有利地减少封装件中互连件的缺陷(例如，冷接头和/或桥接)。
首先参照图1，提供了实施例封装组件(管芯100)的截面图。管芯100可以是半导体管芯并且可以是任何类型的集成电路，诸如处理器、逻辑电路、存储器(例如，动态随机存储器(DRAM)管芯)、模拟电路、数字电路、混合信号等。管芯100可以包括衬底102，形成在衬底102表面的有源器件(未示出)，以及互连结构104。衬底102可以包括，例如，掺杂或未掺杂的块体硅、或者绝缘体上半导体(SOI)衬底的有源层。通常，SOI衬底包括半导体材料(诸如硅)的层，其形成在绝缘层上。绝缘层可以是，例如，埋氧(BOX)层或氧化硅层。绝缘层提供在衬底上，诸如硅衬底或玻璃衬底。可选地，衬底102可包括另一种元素半导体，诸如锗；包括碳化硅、砷化镓、磷化镓、磷化铟、砷化铟、和/或锑化铟的化合物半导体；包括SiGe,GaAsP,AlInAs,AlGaAs,GaInAs,GaInP,和/或GaInAsP的合金半导体；或它们的组合。也可以使用诸如多层或梯度衬底的其他衬底。
可以在衬底102的表面(例如，衬底102和互连结构104之间的界面)形成诸如晶体管、电容器、电阻器、二极管、光电二极管、保险丝等的有源器件。可以在有源器件和衬底102上方形成互连结构104。互连结构104可以包括介电层106(例如，层间介电(ILD)层和/或金属间介电(IMD)层)，介电层106包括使用任何合适的方法形成的导电部件108(例如，包含铜、铝、钨、它们的组合等的导线和通孔)。介电层106可以包括设置在导电部件108之间低k介电材料，其具有的k值例如，低于约4.0或甚至2.0。在一些实施例中，介电层106可以由，例如磷硅玻璃(PSG)、硼磷硅玻璃(BPSG)、氟硅酸盐玻璃(FSG)、SiOxCy、旋涂玻璃、旋涂聚合物、碳化硅材料、它们的化合物、它们的复合物、它们的组合等组成，介电层106可以由诸如旋转、化学气相沉积(CVD)、以及等离子增强CVD(PECVD)的任何合适的方法形成。互连结构电连接各个有源器件以在管芯200内形成功能电路。这种电路提供的功能可以包括存储结构、处理结构、传感器、扩大器、配电、输入/输出电路等。本领域的普通技术人员应该理解，上述实例是用于示出的目的，仅仅是为了进一步解释本发明的应用并且不意图以任何形式限制本发明。可以使用其他电路以适合所给的应用。
可以在互连结构上方形成I/O和钝化部件。例如，接触焊盘110可以形成在互连结构104上方并且可以通过互连结构104中的各个导电部件电连接至有源器件。接触焊盘110可以包括诸如铝、铜等的导电材料。此外，可以在互连结构104和接触焊盘110上方形成钝化层(未示出)。在一些实施例中，钝化层可以由诸如氧化硅、未掺杂的硅玻璃、氮氧化硅等的非有机材料形成。也可以使用其他合适的钝化材料。钝化层的部分可以覆盖接触焊盘110的边缘部分。附加的互连部件(未示出)(诸如附加的钝化层、导电柱、和/或凸块下金属化(UBM)层)也可以可选地形成在接触焊盘110上方。此外，连接件112形成在接触焊盘110上方并且电连接至接触焊盘110。在后续工艺步骤中，连接件112可以用于将管芯100接合至另一个封装组件(例如，参考图2，扇出封装件200)。在一个实施例中，连接件112是焊料球，诸如球栅阵列(BGA)球、微凸块(μbumps)、受控塌缩芯片连接(C4)凸块等。连接件112可以包括Sn-Ag合金、Sn-Cu合金、Sn-Ag-Cu合金等，并且可以是无铅焊料盖或含铅焊料盖。在一个实施例中，根据管芯配置，连接件112的直径可以为约30μm至约300μm。在其他实施例中，也可以使用连接件112的其他尺寸。管芯100的各个部件可以由任何合适的方法形成并且不在此做出进一步详细的描述。此外，如上描述的管芯100的一般部件和配置仅仅是一个实例实施例，并且管芯100可以包括任意数量的上述部件和其他部件的任意组合。
在图2中，提供了扇出封装件200的截面图。封装件200包括管芯202，其可以包括与管芯100相似的部件。管芯202可以包括功能电路，其可以实施和管芯100相同或不同的功能。在一个实施例中，管芯202是逻辑管芯而管芯100是DRAM管芯。管芯202包括接触焊盘204，其可以在管芯202内电连接至有源器件(未示出)。
围绕管芯202设置成型材料206。例如，在成型材料206/管芯202的俯视图中(未示出)，成型材料206可以环绕管芯202。成型材料206可以提供用于形成扇出RDLs(诸如RDLs210)的合适的表面。成型材料206可以包括诸如环氧树脂、成型填充物等的任何合适的材料。用于形成成型材料206的合适的方法可以包括压缩成型、传递成型、液封成型等。
可以在管芯202和成型材料206上方形成一个或多个RDLs 210。RDLs210可以横向延伸过管芯202的边缘以提供扇出互连结构。RDLs 210可以包括一个或多个形成在管芯202和成型材料206的顶面上方的聚合物层212。在一些实施例中，聚合物层212可以包括使用诸如旋涂技术等任何合适的方式形成的聚亚胺(PI)、PBO、苯环丁烷(BCB)、环氧树脂、硅酮、丙烯酸盐、纳米填充酚树脂、硅氧烷、氟化聚合物、聚降冰片烯等。导电部件214(例如，导线和/或通孔)形成在聚合物层212内。在后续工艺步骤中，管芯100可以接合至RDLs 210的暴露表面。
附加的封装部件，诸如，外部连接件132以及贯通的内通孔(TIVs)208形成在封装件200中。连接件216可以是焊料球，诸如球栅阵列(BGA)球、受控塌缩芯片连接(C4)凸块、微凸块等。连接件216可以经由TIVs208电连接至RDLs 210，TIVs 208延伸穿过成型材料206。在一个实施例中，TIVs 208例如是包括铜的导电柱。在另一个实施例中，TIVs 208可以省略并且连接件206可以通过管芯202的内部导电部件(例如，贯穿衬底的通孔(TSVs))电连接至RDLs 210。连接件216可以用于将管芯电连接至其他封装组件，诸如另一个器件管芯、插件、封装衬底、印刷电路板、主板等。
在一个实施例中，设计和制造封装组件(例如，管芯100和扇出封装件200)。然后在接合前分析每一个封装组件的翘曲特性。在一个实施例中，为了分析和预测在接合过程中封装组件的翘曲度而采用摩尔(Moiré)测量。图3示出了实例装置300，其可以用于进行各个封装组件的摩尔(Moiré)测量。封装组件的样本(例如，管芯100和/或封装件200的样本)放置在腔302内的支撑平台304上。腔302可以是热封闭件，并且可以应用热源306以在腔302内加热样本封装组件。在一个实施例中，可以将样本封装组件加热至和接合工艺过程中相同的温度。例如，可以将样本封装组件从室温(例如，约25℃)加热至或大于管芯100上的连接件的熔化点(例如，约350℃或大于350℃)的温度。可以在连接件112附接至管芯100之前或之后进行摩尔测量。
热应用可以引起样本封装组件中的翘曲。在加热过程中或之后，将格栅308(例如，网状栅格)设置在样本封装组件上方。为了在样本封装组件上投下阴影网格图案，光源310以预定的角度在格栅上投射光束。翘曲可以导致阴影网格图案变形和与上覆格栅308的图案不同。在另一个实施例中，不使用光源310和格栅308，网格图案可以被投射在样本封装组件上。照相机312用于拍摄由格栅308和阴影网格图案之间的差异产生的几何图案，其被称为摩尔条纹图(Moiréfringe pattern)。通过分析这些莫尔条纹图(例如，使用计算机处理器)，可以生成翘曲的样本封装组件的三维地形曲线。在一个实施例中，分析管芯100和封装件200的样本，并且生成用于管芯100和封装件200的翘曲的三维地形曲线。也可以使用用于分析翘曲的其他方法和/或系统。
在各个实施例中，管芯100和封装件200的表面是用于接合的表面(例如，图1中的表面100A和图2中的表面200A)。通过分析封装组件(管芯100和封装件200)的翘曲，可以估测接合表面的不同区域中的管芯100和封装件200之间的距离。如上所讨论的，由于翘曲，管芯100和封装件200之间的距离可以变化。因此，可以根据此估测的距离配置用于接合管芯100和封装件200的大量连接件(例如，图6中的连接件252)。在一个实施例中，各个封装组件的分析的翘曲特性用于决定用于接合封装组件的各个连接件的期望大小。例如，可以在管芯100和封装件200设置得较远的区域中形成较大连接件，而在管芯100和封装件200设置得较近的区域中形成较小连接件。
图4A示出了在封装件200的表面200A上的焊料膏层222的形成。层222包括多个尺寸不一的焊料膏元件220。例如，每个焊料膏元件220的尺寸可以根据接合后的封装件200的表面200A与管芯100的表面100A(图1)之间的估测的距离变化。例如，在表面之间的估测距离较大的区域，焊料膏元件220的体积较大；而在表面100A/200A之间的估测距离较小的区域，焊料膏元件220的体积较小。在后续工艺步骤中，将管芯100的连接件(例如，连接件112)对准、回流、并且接合至焊料膏元件220。因此，通过改变每个焊料膏元件220的尺寸，可以在封装件200和管芯100之间形成不同尺寸的连接件。
在一个实施例中，通过模板印刷实施层222的应用，包括在封装件200上方放置模板400(参见图4B)。将模板400的通孔402、404以及406(参见图4C中的模板400的俯视图)对准表面200A的接触区域(例如，电连接至导电部件214和管芯202的区域)。如图4C所示，模板400包括不同尺寸的通孔，诸如小通孔402、中通孔404、以及大通孔406。例如，可以通过激光钻进块体衬底形成通孔402、404、406。在一个实施例中，模板400包括金属、聚合物、或其他任何合适的材料。例如，每个通孔402、404、和406的直径可以在约30μm至约300μm之间变化。根据器件配置，也可以包括具有其他直径的通孔。尽管在特定的配置中示出了具有三个不同尺寸的通孔的模板400，其他实施例模板可以在任意配置中具有任意数量尺寸的通孔。此外，尽管所示出的通孔是圆形的，在其他模板中的通孔可以具有诸如卵状、矩形等任意形状。
模板400的特定配置是基于将要被接合(例如，管芯100和封装件200)的封装组件的翘曲特性。例如，基于如上描述的管芯100/封装件200的摩尔分析配置模板400。模板400可以用于将多个迭代的管芯100接合至具有相同配置的多个迭代的封装件200。然而，对于具有不同配置的封装组件使用具有不同配置的附加的模板。在一个实施例中，封装件制造者可以分析各个封装组件的翘曲特性、基于分析设计特定封装组件的模板、以及将设计提供至模板制造者。然后模板制造者可以基于所提供的设计形成一个或多个模板。然后每个模板用于在一个或多个封装组件上形成焊料膏，一个或多个封装组件上具有用于设计模板的配置。
将模板400放置在封装件200上之后，然后将焊料膏应用在模板400上。然后使用刮板(未示出)去除过量的焊料膏。刮板具有平坦的底面，因此留在通孔402、404、和406中的焊料膏的部分具有平坦的顶面。在抬起模板400之后，焊料膏元件220被留在封装件200的表面200A上。因此，可以基于模板400的配置形成具有不同尺寸的焊料膏元件220。
焊料膏元件220可以包括混合有粘合剂的金属颗粒。金属颗粒可以包括纯金属的颗粒、金属合金的颗粒等。在一些实施例中，焊料膏元件220包括诸如锡、银、铜(SAC)焊料、锡铋(SnBi)焊料等的无铅焊料。焊料膏元件220可以用作半流质的，从而可以模板印刷，还可以在固化前维持其形状。在模板印刷之后，可以实施固化工艺。
在形成焊料膏元件220之后，使用合适的工具(诸如拾取-贴装工具)将管芯100放置在封装件200上。可以将管芯100的连接件112(参见图1)对准封装件200的每个焊料膏元件220。在堆叠之后，实施回流工艺以将连接件112和焊料膏元件220熔化在一起，将管芯100接合至封装件200。在一个实施例中，通过加热管芯100/封装件200至熔化连接件112的合适的温度实施回流工艺。例如，当连接件112包括焊料时，将管芯100/封装件200加热至约180℃至约260℃的温度。在图5中提供形成的结构250，其示出了通过连接件252接合至封装件200的管芯100。通过将连接件112和焊料膏元件220回流形成连接件252。因为焊料膏元件220被形成为具有各种尺寸，连接件252也具有不同的尺寸。例如，在示出的实施例中，连接件252包括较大的连接件252A和较小的连接件252B。在一个实施例中，较大的连接件252A的站立高度(例如，最高点和最低点之间的差距)可以为较小的连接件252B的站立高度的约100％至约150％。据观察，通过在上述比率中配置不同尺寸的连接件，可以减少接合产生的制造缺陷。连接件252也可以在形状上变化。例如，在所示的实施例中，连接件252的第一子集包括凸面侧壁，而连接件252的第二子集包括凹面侧壁。
此外，回流工艺可导致产生接合的封装组件(管芯100/封装件200)的翘曲。例如，在图5中，管芯100的边缘区域比管芯100/封装件200的中心区域距离封装件200更近。如上所述，事先估测管芯100/封装件200的翘曲特性。因此，在管芯100/封装件200相隔较远的区域形成较大的连接件252。在管芯100/封装件200相隔较近的区域进一步形成较小的连接件252。通过基于对封装组件的翘曲的分析将连接件252配置为具有多种尺寸，可以减少制造缺陷(例如，桥接和/或冷接头)。尽管图5示出了封装件250具有翘曲导致的特定形状，封装件250可以具有任何形状。例如，在另一个实施例中，各种封装组件可以在中心区域间隔较近而在边缘区域间隔较远。
随后，如图6所示，可以在管芯100和封装件200之间围绕连接件252分布填充物254。可以包括填充物254以提供对于连接件252的结构支撑和保护。因此，可以使用多种尺寸的连接件252将两个封装组件(管芯100和封装件200)接合在一起以减少接合工艺的制造缺陷。
图7示出了根据一些实施例的用于形成接合的封装结构的流程图500。在步骤502中，分析封装组件(例如，管芯100和封装件200)的翘曲特性。分析翘曲特性可以包括估测在接合后两个封装组件之间的距离。在一个实施例中，分析翘曲特性包括在摩尔测量具有和封装组件相同配置的样本封装组件之后，生成封装组件的地形图。在步骤504中，基于封装组件的翘曲特性配置焊料膏模板(例如，模板400)。例如，可以基于翘曲特性选择焊料膏模板中的每个通孔的尺寸。因此，模板可以是针对具体封装-组件的。例如，当接合具有不同配置的封装组件时，使用不同的模板配置。生成的模板包括多种尺寸的通孔。
在步骤506中，使用焊料膏模板在其中一个封装组件的表面上形成焊料膏层(例如，层222)。因为焊料膏模板包括多种尺寸的通孔，每个独立的焊料膏元件的尺寸也可以改变。在步骤508中，对准封装组件。例如，一个封装组件的焊料球(例如，连接件112)可以对准焊料膏元件。在步骤510中，通过应用回流工艺接合两个封装组件。回流熔化焊料膏元件和焊料球以在两个封装组件之间形成连接件。由于回流之前的每个焊料膏元件的多种尺寸，接合的连接件也可以在尺寸上变化。例如，在将两个封装组件设置较远的区域中连接件较大，而在将两个封装组件设置较近的区域中连接件较小。
一个实施例封装件包括接合至第二封装组件(例如，集成扇出晶圆)的第一封装组件(例如，器件管芯)。在接合过程中，在回流工艺中通常施加热量，其可以导致封装组件的翘曲。因此，两个封装组件之间的距离可以在封装件的不同区域中改变。在一个实施例中，接合封装组件的各个连接件被配置为具有多种尺寸。例如，在将两个封装组件设置较远的区域中使用较大的连接件，而在将两个封装组件设置较近的区域中使用较小的连接件。可以通过分析测试封装组件的翘曲特性(例如，使用摩尔分析)和配置用于在其中一个封装组件上应用焊料膏的封装组件特性的模板形成连接件。通过改变焊料膏的尺寸，随后形成的连接件的尺寸也可以被改变。因此，可以有利地减少接合的封装件中的互连缺陷(例如，冷接头和/或桥接)。
根据一个实施例，方法包括分析第一封装组件和第二封装组件的翘曲特性并且在第一封装组件上形成多个焊料膏元件。多个焊料膏中的每个的体积基于第一封装组件和第二封装组件的翘曲特性。方法还包括将设置在第二封装组件上的连接件对准第一封装组件上的多个焊料膏元件并且通过回流多个连接件和多个焊料膏元件将第二封装组件接合至第一封装组件。
根据另一个实施例，方法包括分析第一封装组件的翘曲特性，基于第一封装组件的翘曲特性配置焊料膏模板，以及通过使用焊料膏模板的模板印刷在第一封装组件的表面上形成多个焊料膏元件。分析翘曲特性包括，当第一封装组件接合至第二封装组件时，估测第一封装组件和第二封装组件之间的距离。多个焊料膏元件的尺寸不一。
根据再一个实施例，封装结构包括第一封装组件、第二封装组件、以及将第一封装组件的第一表面接合至第二封装组件的第二表面的多个连接件。多个连接件的尺寸不一，并且根据第一封装组件和第二封装组件的翘曲特性选择多个连接件中的每个的尺寸。
上面论述了若干实施例的部件，使得本领域普通技术人员可以更好地理解本发明的各个方面。本领域普通技术人员应该理解，可以很容易地使用本发明作为基础来设计或更改其他用于达到与这里所介绍实施例相同的目的和/或实现相同优点的处理和结构。本领域普通技术人员也应该意识到，这种等效构造并不背离本发明的精神和范围，并且在不背离本发明的精神和范围的情况下，可以进行多种变化、替换以及改变。

Claims (10)

1.一种形成封装结构的方法，包括：
分析第一封装组件和第二封装组件在接合工艺的温度下的翘曲特性，其中，所述翘曲特性包括：在所述接合工艺的温度下所述第一封装组件和所述第二封装组件之间的距离；
在所述第一封装组件上形成多个焊料膏元件，其中，所述多个焊料膏元件中的每一个的体积基于在所述接合工艺的温度下的所述第一封装组件和所述第二封装组件之间的距离；
将设置在所述第二封装组件上的多个连接件对准所述第一封装件上的所述多个焊料膏元件；以及
通过在所述接合工艺的温度下回流所述多个连接件和所述多个焊料膏元件将所述第二封装组件接合至所述第一封装组件。
2.根据权利要求1所述的形成封装结构的方法，其中，形成所述多个焊料膏元件包括模板印刷工艺，所述模板印刷工艺使用包括多个通孔的模板。
3.根据权利要求2所述的形成封装结构的方法，还包括基于所述第一封装组件和所述第二封装组件的所述翘曲特性选择所述多个通孔中的每一个的尺寸。
4.根据权利要求1所述的方法，其中，分析所述第一封装组件和所述第二封装组件的所述翘曲特性包括：在将所述第二封装组件接合至所述第一封装组件之后，估测多个区域处的所述第一封装组件和所述第二封装组件之间的距离。
5.根据权利要求1所述的形成封装结构的方法，其中，形成所述多个焊料膏元件包括：
在所述第一封装组件的第一区域形成具有第一体积的第一焊料膏元件；以及
在所述第一封装组件的第二区域形成具有第二体积的第二焊料膏元件，其中，所述第一体积大于所述第二体积，并且其中，在所述第一区域中的所述第一封装组件和所述第二封装组件之间的估测距离大于在所述第二区域中的估测距离。
6.根据权利要求1所述的形成封装结构的方法，其中，分析所述翘曲特性还包括摩尔测量具有与所述第一封装组件和所述第二封装组件相同配置的样本封装组件。
7.根据权利要求1所述的形成封装结构的方法，其中，所述第二封装组件是第二器件管芯。
8.根据权利要求1所述的形成封装结构的方法，还包括：在回流所述多个连接件和所述多个焊料膏元件之后，在所述第一封装组件和所述第二封装组件之间形成填充物。
9.一种形成封装结构的方法，包括：
分析第一封装组件和第二封装组件在接合工艺的温度下的翘曲特性，其中，所述翘曲特性包括：在所述接合工艺的温度下所述第一封装组件和所述第二封装组件之间的距离；
基于所述第一封装组件和所述第二封装组件在所述接合工艺的温度下的所述第一封装组件和所述第二封装组件之间的距离配置焊料膏模板；以及
通过使用所述焊料膏模板的模板在所述第一封装组件的表面上形成多个焊料膏元件，其中，所述多个焊料膏元件的尺寸不一，并且所述多个焊料膏元件中的每一个的尺寸基于所述第一封装组件和所述第二封装组件在所述接合工艺的温度下的所述第一封装组件和所述第二封装组件之间的距离。
10.一种封装结构，包括：
第一封装组件；
第二封装组件；以及
多个连接件，所述多个连接件在接合工艺的温度下将所述第一封装组件的第一表面接合至所述第二封装组件的第二表面，其中，所述多个连接件的尺寸不一，并且其中，所述第一封装组件的所述第一表面和所述第二封装组件的所述第二表面具有在所述接合工艺的温度下形成的翘曲，根据所述第一封装组件和所述第二封装组件在接合工艺的温度下的所述第一封装组件和所述第二封装组件之间的距离选择所述多个连接件中的每一个的尺寸。
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