TW201729396A - 發光面板及製造此種發光面板的方法 - Google Patents

發光面板及製造此種發光面板的方法 Download PDF

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TW201729396A
TW201729396A TW105138014A TW105138014A TW201729396A TW 201729396 A TW201729396 A TW 201729396A TW 105138014 A TW105138014 A TW 105138014A TW 105138014 A TW105138014 A TW 105138014A TW 201729396 A TW201729396 A TW 201729396A
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substrate
light
micro
transfer
microchips
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戴文克里斯托 羅賓
布魯諾 莫里
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原子能與替代能源公署
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Abstract

一種發光面板包括：- 一包括多個電連接部的基板(68)；- 微晶片(16)之陣列，固定在該基板(68)上，並連接至該等電連接部以便被驅動，每一微晶片包括由下列者組成的堆疊：○一電晶體系的控制電路(20)，以形成在矽體積(silicon volume)中，該電路被連接到該等基板連接部；○及一微發光二極體(18)，固定到該控制電路，並連接至該控制電路以便被控制。

Description

發光面板及製造此種發光面板的方法
本發明是有關於發光面板，特別是例如電腦、智慧型手機、電視機、平板電腦或是影像投影機之顯示面板。
本發明更特別地有關於以無機微發光二極體(micro-LED)為基礎之發光面板，特別地在以氮化鎵(GaN)或是衍生材料為基礎之微發光二極體。
概要地，發光面板包括個別受到控制電路陣列(或「主動陣列」)控制的發光元件或像素之陣列。每一個控制陣列包含一個或複數個電晶體，操作作為開關，以驅動與其關聯的像素；以及最常見的電容器，用於在面板顯示器的兩次更新之間維持像素偏壓。
迄今，僅兩種技術能夠形成具有大尺寸及長壽命的發光面板，即是液晶系技術(液晶顯示器(LCD))及電漿系技術(電漿顯示面板)。然而，這些技術之每一者具有若干缺點，例如對於液晶顯示器有功率效率與方向性的問題，及對於電漿顯示面板有功率消耗與螢幕烙印的問題。
替代的技術，尤其是以有機光二極體(或有機發光二極體(OLED))為基礎的技術因而已被開發，然而沒有提供一個令人滿意的成果。甚至，有機發光二極體為基礎的顯示器具有閃爍問題與壽命太短，限制這些顯示器使用在短壽期的裝置上(尤其是智慧型手機)。
同時，舉凡為產生光而設想的技術(液晶顯示器、電漿、有機發光二極體...)，控制電路係以薄膜沈積技術製造，稱為「薄膜電晶體(TFT)」。控制電路的電子組件(特別是電晶體、電容器、電氣線路)因而藉由連續沈積原料的薄膜並藉由使用光微影遮罩以將它們的組件(電極、半導體層、介電層、線路...)而形成。例如，製造各僅包含一個電晶體與一個電的液晶顯示器的控制電路，需要使用5到9個光微影遮罩。因此，根據此技術製造之控制電路的成本非常高。另外，根據傳統薄膜電晶體技術製作大尺寸主動陣列，由於能夠在大表面面積沈積薄膜的機器成本，實質上會增加製造螢幕的成本。這就是為什麼估計現在只有少數能夠投資高成本設備的市場經營者能夠承擔其成本。
本發明的目的在於提供一種製造發光面板的方法，以有別於液晶顯示器、電漿及有機發光二極體等技術的發光技術為基礎，能夠以降低的成本形成發光面板。
為達此目標，本發明的目的在於一種製造發光面板的方法，包括： - 製造一第一基板，該第一基板包括：○由半導體層組成的堆疊，該等半導體層形成無機半導體微發光二極體；及○電連接部之陣列，供微發光二極體用，以電連接部配置在第一基板的第一表面上的方式來執行第一基板的製造；- 獨立於第一基板，在第二矽基板中製造用於控制微發光二極體之電晶體系電路的陣列，進行該製造，使得：○用於微發光二極體之控制的第一連接部被配置在第二基板之第一表面上；○及用於發光面板之驅動的第二連接部被配置在第二基板之第二表面上；- 將第一基板與第二基板之第一表面，以一個放在另一個上的方式放置，並將該等表面相互固定，以將微發光二極體之電連接部與控制電路之第一電連接部電性連接，因此獲得包括電子微晶片之陣列的第三基板，每一電子微晶片係藉由堆疊微發光二極體及控制電路而形成；- 製造一微晶片轉移結構，該微晶片轉移結構包括：○一轉移基板；○及微晶片之陣列，每一微晶片僅以其微發光二極體被固定在轉移基板，並藉由在第三基板上圍繞微晶片形成溝槽而個體化； - 獨立於轉移結構，製造第四基板，該第四基板包括用以供應驅動發光面板之信號的電連接部，該連接部被配置在第四基板之第一表面上；- 將轉移結構放置在第四基板之第一表面上，將微晶片固定在第四基板之第一表面上，以連接控制電路之第二連接部與第四基板之電連接部，並自轉移基板分離微晶片。
換言之，因此形成的發光面板包括無機微發光二極體之陣列，因此具有比有機微發光二極體長的壽命。每一微發光二極體包括不具有任何電子或電氣組件，不像具有被主動陣列部分地遮蔽的液晶之液晶顯示器面板，且不像具有被電極部分地遮蔽的電漿單元的電漿面板。這特別說明了將薄膜電晶體技術運用在液晶顯示器及電漿顯示面板，因為此舉能夠製造具有很小的厚度的主動陣列或電極，因此將有較小的干擾。
由於依據本發明之微發光二極體的佈局，可以不使用此昂貴的技術來執行。因此，本發明之主動陣列係有利地根據微電子傳統的技術來形成，例如眾所周知的特定應用積體電路(application-specific integrated circuit；ASIC)，對於這種積體電路，電晶體直接在矽晶圓主體上形成，並非藉由連續沈積材料層而形成。因此可能形成發光面板，其尺寸至少等於常見在電子晶片製造領域之晶圓的尺寸(例如，用來製造特定應用積體電路的晶圓)，或甚至是由複數個晶圓形成之面板。本發明進一步能夠在主動陣列上實現用於控制微發光二極體的任 何型式電子線路圖。本發明之主動陣列可特別地根據目前技術的線路圖而形成，每一個微發光二極體因此以與目前技術相同的方式利用個別的控制電晶體、電容器等來控制。此類型的控制的優點(響應性、顯示品質等)可進而保持。然而，不同於製造已經互連的電晶體之昂貴的薄膜電晶體技術，本發明之主動陣列的電晶體在製造、就定位後才藉由被動陣列之導電線路互連。
另外，本發明執行將基板放置在另一者之上。現在，基板放置可藉由微電子領域中的傳統機器而被實現。
最後，如果需要的話，因此獲得具有低成本及大表面面積之無機微發光二極體技術的發光面板。
根據一實施例，微晶片轉移結構之製造，包括：- 將第三基板放置在轉移基板並暫時性黏接至轉移基板；- 接著圍繞微晶片形成溝槽向下至轉移基板。
換言之，本發明可有利地運用藉著利用操作基板(handle substrate)之放置。
作為變化例：- 第一基板之製造，包括製造生長基板及以磊晶方式生長形成微發光二極體的半導體層，該生長基板形成微晶片轉移結構之基板；- 微晶片轉移結構之製造，包括圍繞微晶片形成溝槽向下至轉移基板； - 自轉移基板分離微晶片，包括對微晶片上的轉移基板垂直照射雷射，以自轉移基板分離微晶片。
在這差異裡，生長基板因而扮演著操作基板的角色，進而節省製造/放置步驟。
根據實施例：- 該轉移結構之微晶片陣列具有第一重複間距；- 第四基板之電連接部，以比第一重複間距更大的第二重複間距配置在一陣列；- 轉移結構的放置、將微晶片黏接於第四基板之第一表面及自轉移基板分離微晶片，包括：○將轉移結構放置於第四基板之第一位置上；○將至少一個第一微晶片固定在第一位置上；○藉由使轉移結構與第四基板相對彼此偏移第二重複間距，而將轉移結構放置於第四基板之第二位置上；○及將至少一個第二微晶片固定在第二位置上。
換言之，此方法能夠獨立於發光面板之期望的最終間距以高密度製造微晶片，藉此增加製造效率。然後微晶片依發光面板期望之像素間距被放置。
根據實施例，第二基板控制電路之製造，係根據特定應用積體電路製造技術而執行，此技術允許高效率、每單位表面面積的高組件密度，同時提供電子微發光二極體控制線路圖(電晶體、電容器、電連接部等之數量)之高的設計自由度。另外，此技術不需要與必須配備能夠製造大型主動薄膜電晶體陣列的機器之技術一樣鉅額的投資。
根據實施例，第四基板僅包括電連接部。因此，發光面板內唯一可能被製造成單件的元件不包括主動元件(例如電晶體)。因此，即使發光面板具有大表面面積，其成本有限。
根據實施例，形成第一基板的微發光二極體之堆疊係由特別是鎵系的三五族半導體製成，特別由氮化鎵(GaN)、及/或由磷化鎵(GaP)、及/或由氮化銦鎵(InGaN)、及/或由氮化鋁鎵(AlGaN)、及/或由砷化銦鎵(InGaAs)、及/或由砷化鋁鎵(AlGaAs)、及/或由砷磷化鎵(GaAsP)等材料製成。此類型之半導體材料能夠製造微發光二極體，使其發射紅光(例如砷磷化鎵、磷化銦鎵)、發射藍光(例如包含10%至20%的銦之氮化鎵)、及發射綠光(例如包含超過20%的銦之氮化銦鎵、磷化鎵、鋁磷化鎵)。因此可形成發光元件，此元件可自行發射發光面板期望的波長，及因此取代目前使用的彩色濾光片。
特別地，製造發光影像顯示面板，包括每一個影像點上三個發光元件(紅色、綠色、及藍色各一個)，此方法能夠獨立地形成三個微晶片陣列，每一顏色一個陣列，及實現隨後在發光面板期望的位置上將它們放置在第四基板。作為變化例，對於具有於其上所製造之給定顏色的微發光二極體的每一個生長基板，放置含有控制電子設備的矽基板，在此之後因此獲得的不同顏色的微晶片依前述的方式放置。
本發明的目的也在於提供一種發光面板，此發光面板包括： - 一基板，包括電連接部；- 微晶片之陣列，固定在基板上，並連接到電連接部以便被驅動，每一微晶片包括由下列者組成的堆疊：○一電晶體系的主動控制電路，形成在矽體積中，此電路被連接到基板的電連接部；○及一微發光二極體，固定到控制電路，並連接至控制電路以便被控制。
換言之，根據本發明之發光面板能夠形成更明亮的顯示器，有著朗伯發射(lambertian emission)(因此沒有視角問題)，此顯示器具有較佳的功率效率，及可能產生的透明基板。
根據實施例，微發光二極體係由特別是鎵系的三五族半導體製成，特別由氮化鎵(GaN)、及/或由磷化鎵(GaP)、及/或由氮化銦鎵(InGaN)、及/或由氮化鋁鎵(AlGaN)、及/或由砷化銦鎵(InGaAs)、及/或由砷化鋁鎵(AlGaAs)、及/或由砷磷化鎵(GaAsP)、及/或由銦鎵磷化鋁(InGaAlP)等材料製成。
10‧‧‧發光面板
12‧‧‧電連接基板
14‧‧‧微晶片陣列
16‧‧‧微晶片
18‧‧‧微發光二極體
20‧‧‧控制電路
22‧‧‧半導體層
24‧‧‧半導體層
26‧‧‧電接點
28‧‧‧電接點
30‧‧‧接觸轉接部
32‧‧‧電接點
34‧‧‧下表面
36‧‧‧下表面
38‧‧‧第一PMOS電晶體
40‧‧‧輸出接點
42‧‧‧輸出接點
44‧‧‧第二NMOS電晶體
46‧‧‧輸出接點
48‧‧‧電容器
50‧‧‧掃瞄電路
52‧‧‧掃瞄電路
60‧‧‧第一基板
61‧‧‧第二基板
62‧‧‧生長基板
63‧‧‧第三基板
64‧‧‧操作基板
66‧‧‧溝槽
68‧‧‧連接基板
在連同隨附圖式閱讀僅被提供作為範例的下述說明，將較佳理解本發明，圖式中相同的元件符號標示相同或是相似的元件，其中：第1圖係根據本發明之發光面板的簡化立體圖；第2圖係根據本發明之包括在面板結構內的微晶片的簡化截面圖； 第3圖係例示微發光二極體及其控制電路之電子線路圖；第4圖係例示根據本發明之互連基板連接部之電子線路圖；第5A至5J圖係例示根據本發明之製造發光面板方法的第一實施例；及第6A至6I圖係例示根據本發明之製造發光面板方法的第二實施例。
下文中，用語「下」和「上」係指例示在圖式中之元件的相關佈局。
參照第1至3圖，根據本發明之實施例的發光面板10，例如用於(電腦、智慧型手機、電視機、平板電腦...等的)顯示螢幕或是用於影像投映機，包括：- 一被動電連接基板12，即僅包括電導體，例如電接點及走線，以供應面板控制信號DATA及SCAN，及用以供應電源電壓Vp及Vn；及- 發光微晶片16之陣列14，固定於被動基板12及連接到被動基板之電連接器，微晶片係例如針對影像顯示器而空間配置。
每一個微晶片16包括在上部的無機半導體微發光二極體18及在下部的由矽區塊形成之主動控制電路20，主動控制電路固定到上部。特別地，此控制電路並非根據薄膜電晶體技術而形成。
更特別地，微發光二極體18，包括至少一個同質介面或是一個異質接面，例如以上P型(或N型)半導體層22及下N型(或P型)半導體層24之堆疊形成的PN接面，及兩個用以注入穿過此堆疊之電流的電接點26、28，以產生光線。微發光二極體18係由鎵系的三五族半導體製成，特別由氮化鎵(GaN)、及/或由磷化鎵(GaP)、及/或由氮化銦鎵(InGaN)、及/或由氮化鋁鎵(AlGaN)、及/或由砷化鋁鎵(AlGaAs)、及/或由砷化銦鎵(InGaAs)、及/或由砷磷化鎵(GaAsP)等材料製成。此類型之半導體材料能夠製造微發光二極體，使其發射紅光(例如砷化鋁鎵、砷磷化鎵、銦鎵磷化鋁)、發射藍光(例如氮化銦鎵)、及發射綠光(例如氮化鎵、磷化鎵、鋁磷化鎵)。當然，微發光二極體18的結構不能被縮減至例如由氮化鎵製成之兩個N及P層的堆疊，及可以採取任何已知的形狀，例如平面構造、平台式(MESA-type)構造，及以奈米線系的結構，諸如在文獻WO 2012/035243及/或WO 2012/156620中描述。
接觸轉接部30係進一步設置成穿過微晶片14，以將微發光二極體18之多個電接點26中之一者與配置在控制電路20之下表面34的電接點32電性連接。接觸轉接部30例如是直通矽晶穿孔(TSV)式且為了此目的而包括從接點26穿過微晶片到表面34的孔洞，該孔洞具有鍍上一層例如介電層的電絕緣體之內壁，且以例如金屬的導電材料填充。微發光二極體18的另一個接點28係例如配置在微發光二極體18之下表面36，位於與控制電路20之上表面的介面。
控制電路20，包括用於根據控制信號DATA及SCAN個別控制微發光二極體18的電子組件(電晶體、電容器、電阻器等)。這樣的個別控制能夠主動地定址每一個微發光二極體。例如，參照第3圖，控制電路20包括：- 第一PMOS電晶體38，具有連接到微晶片14之輸出接點40的汲極，以接收設定微發光二極體18的狀態(例如開跟關)的信號DATA，及具有連接到微晶片14之輸出接點42的閘極，以接收致能或不進行微發光二極體18狀態之更新信號SCAN；- 第二NMOS電晶體44，具有連接到第一PMOS電晶體38之源極的閘極，具有連接到發光二極體微晶片之輸出接點46的汲極以便施加第二電源電壓Vp，及具有連接到微發光二極體18之接點28的源極。第二電晶體44因而可連接微發光二極體18，並在接點32與28間施加不同的電壓Vp-Vn，及因此注入電流至微發光二極體18；及- 電容器48，連接第二電晶體44的閘極與汲極，以維持微發光二極體18在兩次更新間的狀態。
第4圖係例示面板之連接與控制的線路圖，面板包含：三列與三行的微晶片16之陣列14；連接基板12，連接到逐行更新陣列14的電路50；電路52，控制該電路50所選擇之列的微發光二極體之亮度的狀態；及電壓源Vp與Vs。
根據本發明之製造發光面板之方法的第一實施例，例如，現在將連同第5A至5I圖說明諸如前述的面板。
此方法起始於矽基板60中主動控制電路20之陣列的製造，例如，根據ASIC(特定應用積體電路)製造技術，此技術本身即為眾所周知的目前技術(圖5A)。
電路20係以至少一距離△留出間隔，此距離係選擇用來形成圍繞每一個電路20的溝槽，進而可以隨後將這些電路個體化。距離△例如係根據溝槽製造過程的精確度而選定，因而可以藉由考量該過程使電路20有著最大的密度。
獨立於控制電路20之陣列的製造，此方法包括製造第二基板61，此基板包括由形成微發光二極體18的陣列之半導體層與電接點所形成的堆疊。形成微發光二極體之半導體層之堆疊的製造，例如，分別為P型及N型的兩個氮化鎵層係在生長基板62(例如由藍寶石或是由矽製成)上以磊晶方式形成，為眾所周知的目前技術(第5B圖)。例如，微發光二極體18係根據Journal of Crystal Growth 268(2004)527-530所描述的技術而製作。
參照第5C圖，控制電路20之陣列及微發光二極體18之陣列接著係以一個放在另一個上面的方式放置而彼此固定，例如藉著直接異質黏接的方式或是藉由使用銲料凸塊之倒裝晶片式(flip-chip)混成方式及熱壓及/或藉由使用中空微型管，如同已在文獻WO 2013/001225或FR 2 928 033中描述的方法。陣列的互連係因此用來連接每一個微發光二極體之電接點28與關聯控制電路之電晶體44對應的端子。直通矽晶穿孔式接觸轉接部30係用來將每一個微發光二極體之接點26轉接到控制電路的自由表面。然後生長基板62例如在藍寶石基板的情況下藉由雷射剝離技術移除，或是在矽基板的情況下藉由機械研磨及以氫氧化鉀進行化學蝕刻技術移除。
因堆疊微發光二極體陣列與控制電路而形成的第三基板63接著藉由所謂的暫時性黏接轉移至例如由矽製成之所謂的操作基板64，將使後續容易移除成為可能，例如藉由樹脂進行暫時性黏接，尤其是使用Brewer公司的WaferBOND® HT-10.10樹脂(第5D圖)。
本方法藉由圍繞每一個微晶片14進行蝕刻，向下至操作基板64產生溝槽66，進而將微晶片14個體化，例如，藉由使用Cl2的感應藕合式電漿(inductive coupled plasma)進行反應性離子蝕刻(reactive ion etching)(反應性離子蝕刻模式提供更具方向性的蝕刻)(第5E圖)。
獨立地，在前述的步驟中，此方法包括製造第四被動基板68，其具有面板期望的尺寸，及包括用以電連接每一個控制電路20之下表面34上的接點32、40、42及46之電連接部的網路，例如，具有由氧化銦錫(ITO)製造之電氣線路的玻璃板，電氣線路在玻璃板之表面形成。
藉由微發光二極體18附著於操作基板64上的微晶片14接著係被放置在基板68，及固定以電性連接控制電路的電連接部至基板68上對應的電連接部，例如，藉由直接異質黏接的方法或是藉由前述之倒裝晶片式混成方法(第5F圖)。藉由加熱例如高達300℃，以自操作基板64分離微晶片14。
由於在操作基板64上的微晶片14之間距(依目前技術概以數十個微米(μm)的等級，例如30微米)可能大於發光面板上微晶片之陣列的間距(目前以數百微米的等級，例如15微米到1毫米的範圍)，此方法包括放置一部分的微晶片至被動基板68上(第5G圖)，及以發光面板的間距來移動操作基板與剩餘的微晶片，放置另一部分的微晶片(第5H圖、第5I圖)，一直到完成發光面板(第5J圖)。
在這第一實施例中，操作基板係用於在被動連接基板68上放置微晶片14。藉由暫時性黏接微晶片14，無論暫時性黏接的方式為何，操作基板64的使用具有能夠移除生長基板之優勢。不過暫時性黏接微晶片已假定為製造的步驟及附加的放置步驟。
根據例示於第6A至6I圖的本發明第二個實施例之方法，當第一及第二基板60、61彼此互相連接時，生長基板62不會被移除，如第5C圖，但生長基板會被當作操作基板使用，如此可以節省製造與放置的步驟，及使在陣列68上微晶片14的對準較為容易。藉由使用局部雷射剝離，微晶片14接著自生長基板62分離， 如第6F圖，例如於美國專利6071795中所敘述(即使用脈衝248奈米氟化氪氣體雷射(KrF laser)及將微發光二極體曝露在介於100至600毫焦耳/平方公分(mJ/cm2)的能量下)。對於微發光二極體，透鏡能夠將雷射光束對焦在藍寶石及氮化鎵之間的介面上。
對於前述製造方法之實施例，適用於顯示彩色影像之發光面板的製造，藉著定位互連在藍色像素適當的位置，將可開始放置微晶片於對應之藍色像素，其後此互連可被添加以放置綠色像素，再之後此互連可被添加以放置紅色像素。
另外，在微晶片14及互連基板68間的互連可使用銅製微型管或微型柱(所謂的「微凸塊」技術)或銅製連接墊以完成各墊子間的直接黏接(例如異質或藉由熱壓)。
已經說明前述之特定的控制電路，此控制電路包括每一微晶片上含有四個電連接部。當然，任何型式主動控制電路可被預期。為了具有平面的表面，可特別提供在ASIC製造方法中最新的互連位準。特別地，在矽中製造電晶體的方法之後，所產生的表面可能是非平面的。為了使介於主動矽陣列與微發光二極體陣列(例如，以氮化鎵製造)間的互連較為容易，較佳是將表面彼此放置成平面的。為了達成此目標，在主動陣列上的最新位準之形成，藉由沈積介電絕緣體(例如二氧化矽)，蝕刻此介電絕緣體，使這蝕刻出現在連接部的位準上，沈積銅以填滿蝕刻的洞，及最後藉化學機械研磨 (chemical mechanical polishing)使其具有平面的表面。此技術之型式即眾所周知的「金屬鑲嵌法(damascene)」。
14‧‧‧微晶片陣列
64‧‧‧操作基板
68‧‧‧連接基板

Claims (9)

  1. 一種製造一發光面板(10)的方法，包括：- 製造一第一基板(61)，該第一基板(61)包括：○由多個半導體層組成的堆疊，該等半導體層形成無機半導體微發光二極體(18)；及○電連接部(26、28)之陣列，供該等微發光二極體用，該第一基板的製造係以該等電連接部(26、28)配置在該第一基板的一第一表面(36)上的方式來執行；- 獨立於該第一基板(61)，在一第二矽基板(60)中製造用於控制該等微發光二極體(18)之電晶體系的電路(20)的陣列，執行該製造，使得：○用於該等微發光二極體(18)之控制的第一連接部(28)被配置在該第二基板之一第一表面(34)上；○及用於該發光面板之驅動的第二連接部(32、42、46)被配置在該第二基板之一第二表面上；- 將該第一基板(61)與第二基板(62)之第一表面，以一個放在另一個上的方式放置，並將該等表面相互固定，以將該等微發光二極體之電連接部與該等控制電路之第一電連接部電性連接，因此製成包括電子微晶片(16)之陣列的第三基板，每一電子微晶片係藉由堆疊一微發光二極體(18)及一控制電路(20)而形成； - 製造一微晶片轉移結構(16、64)，該微晶片轉移結構(16、64)包括：○一轉移基板(64)；○及該微晶片(16)之陣列，每一微晶片僅以其微發光二極體被固定在該轉移基板，並藉由在該第三基板上圍繞該微晶片形成一溝槽(66)而個體化；- 獨立於該轉移結構，製造一第四基板(68)，該第四基板(68)包括用以供應驅動該發光面板之信號的電連接部，該等連接部被配置在該第四基板之一第一表面上；- 將該轉移結構放置在該第四基板之該第一表面上，將該等微晶片固定在該第四基板之該第一表面上，以連接該等控制電路之該等第二連接部與該第四基板之該等電連接部，及自該轉移基板分離該等微晶片。
  2. 如請求項1之發光面板製造方法，其中該微晶片轉移結構(16、64)之製造包括：- 將該第三基板放置在該轉移基板(64)並暫時性黏接至該轉移基板(64)；- 接著圍繞該等微晶片形成該等溝槽(66)向下至該轉移基板。
  3. 如請求項1之發光面板製造方法，其中：- 該第一基板之製造，包括製造一生長基板(62)及以磊晶方式生長形成該等微發光二極體(18)的半導體層，該生長基板形成該微晶片轉移結構之基板； - 該微晶片轉移結構之製造，包括圍繞該等微晶片形成該等溝槽(66)向下至該轉移基板；- 自該轉移基板分離該等微晶片，包括對該等微晶片上的該轉移基板上垂直照射，以自該轉移基板分離該等微晶片。
  4. 如請求項1、2或3之發光面板製造方法，其中：- 該轉移結構之該等微晶片(16)之陣列具有第一重複間距；- 該第四基板(68)之該等電連接部，以比該第一重複間距更寬的一第二重複間距被配置成一陣列；- 該轉移結構(16、64)的轉移、將該等微晶片固定於該第四基板(68)之該第一表面、及自該轉移基板分離該等微晶片(16)，包括：○將該轉移結構放置於該第四基板之一第一位置上；○將至少一第一微晶片固定在該第一位置上；○藉由使該轉移結構與該第四基板相對彼此偏移該第二重複間距，而將該轉移結構放置於該第四基板之一第二位置上，參照該第二重複間距，以平移方式相互排列；○及將至少一第二微晶片固定在該第二位置上。
  5. 如請求項1至4中任一項之發光面板製造方法，其中該第二基板中該等控制電路(20)係根據特定應用積體電路製造技術製成。
  6. 如請求項1至5中任一項之發光面板製造方法，其中該第四基板(68)僅包括電連接部。
  7. 如請求項1至6中任一項之發光面板製造方法，其中形成該第一基板的該等微發光二極體(18)之堆疊係以氮化鎵，及/或以氮化銦鎵，及/或以氮化鋁鎵製作。
  8. 一種發光面板，包括：- 一基板(68)，包括多個電連接部；- 微晶片(16)之陣列，固定在該基板(68)上，並連接到該等電連接部，以便被驅動，每一微晶片包括由下列者組成的堆疊：○一電晶體系的主動控制電路(20)，形成在矽體積(silicon volume)中，該電路被連接到該基板的該等連接部；○及一微發光二極體(18)，固定到該控制電路，並連接至該控制電路以便被控制。
  9. 如請求項8之發光面板，其中該等微發光二極體係以氮化鎵，及/或以氮化銦鎵，及/或以氮化鋁鎵製作。
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