JP2022025143A - 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 - Google Patents
照明フェイスプレート及びこのような照明フェイスプレートの製造方法 Download PDFInfo
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Abstract
Description
-無機半導体マイクロLEDを形成する半導体層の積層体と、前記マイクロLEDのための電気接続部のアレイと、を備える、第1の基板を製造する段階であって、前記電気接続部が前記第1の基板の第1の表面に配置されるような方法で前記第1の基板の製造が行われる段階、
-前記第1の基板から独立した第2のシリコン基板に、前記マイクロLEDを制御するためのトランジスタベースの回路のアレイを製造する段階であって、前記マイクロLEDの制御用の第1の接続部が、前記第2の基板の第1の表面に配置され、前記発光パネルの駆動用の第2の接続部が、前記第2の基板の第2の表面に配置されるように、前記製造が行われる段階、
-前記マイクロLEDの電気接続部を前記制御回路の第1の電気接続部に電気的に接続するために、前記第1の基板の第1の表面及び前記第2の基板の第1の表面の一方を他方に配置し、前記表面を互いに固定し、それによって、電子マイクロチップのアレイを備える第3の基板を得る段階であって、各々がマイクロLED及び制御回路の積層体で形成される段階、
-移送基板及び前記マイクロチップのアレイを備えるマイクロチップ移送構造体を製造する段階であって、各マイクロチップが、そのマイクロLEDによってのみ前記移送基板に固定され、前記マイクロチップの周囲で前記第3の基板にトレンチを形成することによって個別化される段階、
-前記発光パネルを駆動するための信号を供給するための電気接続部を備える、前記移送基板から独立した第4の基板を製造する段階であって、前記接続部が、前記第4の基板の第1の表面に配置される段階、
-前記第4の基板の第1の表面に前記移送構造体を配置し、前記制御回路の第2の接続部を前記第4の基板の電気接続部に接続するために前記第4の基板の第1の表面に前記マイクロチップを固定し、前記移送基板から前記マイクロチップを分離する段階、
を含む、発光パネルの製造方法を対象とする。
-前記第3の基板を前記移送基板に配置し、一時的に結合する段階、及び、
-次いで、前記移送基板に至るまで前記マイクロチップの周囲にトレンチを形成する段階、を含む。
-前記第1の基板の製造が、成長基板を製造し、前記マイクロLEDを形成する半導体層をエピタキシャル成長によって成長させる段階を含み、前記成長基板が、前記マイクロチップ移送構造体の基板を形成し、
-前記マイクロチップ移送構造体の製造が、前記移送基板に至るまで前記マイクロチップの周囲にトレンチを形成する段階を含み、
-前記移送基板からの前記マイクロチップの分離が、前記移送基板からのその分離を得るために、前記マイクロチップ上における前記移送基板の、それに垂直なレーザー照射を含む。
-前記移送構造体の前記マイクロチップのアレイが、第1の繰り返しピッチを示し、
-前記第4の基板の電気接続部が、前記第1の繰り返しピッチより大きな第2の繰り返しピッチを有してアレイ状に配置され、
-前記第1の移送構造体の配置、前記第4の基板の第1の表面に対する前記マイクロチップの結合、及び、前記移送基板からの前記マイクロチップの分離が、
前記第4の基板の第1の位置に前記移送構造体を配置する段階、
前記第1の位置に少なくとも1つの第1のマイクロチップを固定する段階、
前記移送構造体及び前記第4の基板を互いに対して前記第2の繰り返しピッチによって移動することによって、前記第4の基板の第2の位置に前記移送構造体を配置する段階、及び、
前記第2の位置に少なくとも1つの第2のマイクロチップを固定する段階を含む。
-電気接続部を備える基板、及び、
-前記基板に固定され、駆動されるように前記電気接続部に接続されるマイクロチップのアレイ、を備え、
各マイクロチップが、
シリコン容積内に形成されたトランジスタベースの能動制御回路であって、前記回路が前記基板の接続部に接続される能動制御回路と、
前記制御回路に固定され、制御されるようにそれに接続されるマイクロLEDとの積層体を備える、発光パネルを対象とする。
-パネル制御信号DATA及びSCANを供給し、電力供給電圧Vp及びVnを供給するために、例えば電気接点及びトラックである導電体を含むだけである受動電子接続基板12、及び、
-受動基板12に固定され、その電気接続部に接続される発光マイクロチップ16のアレイ14を備え、
そのマイクロチップは、例えば画像ディスプレイ用に空間的に配置される。
-マイクロLED18の状態(例えば、オン又はオフ)を設定する信号DATAを受けるためにマイクロチップ14の出力接点40に接続されたドレインを有し、マイクロLED18の状態を更新することを可能にしたり、しなかったりする信号SCANを受けるためにマイクロチップ14の出力接点42に接続されるゲートを有する第1のPMOSトランジスタ38を備える。
-第1のPMOSトランジスタ38のソースに接続されるゲートを有し、第2の電力供給電圧Vpの印加のためのLEDマイクロチップの出力接点46に接続されるドレインを有し、マイクロLED18の接点28に接続されるソースを有する第2のNMOSトランジスタ44を備える。第2のトランジスタ44は、マイクロLED18の接続、及び、接点32及び28の間の電位差Vp-Vnの印加をこのように可能にし、マイクロLED18への電流の流入を可能にする。
-2つのリフレッシュ間のマイクロLED18の状態を維持するために第2のトランジスタ44のゲート及びドレインの間に接続されるキャパシタ48を備える。
12 受動基板
14 アレイ
16 発光マイクロチップ
18 無機半導体マイクロLED
20 制御回路
22 半導体層
24 半導体層
26 電気接点
28 電気接点
30 接触トランスファ
32 接点
34 下部表面
36 下部表面
38 PMOSトランジスタ
40 接点
42 接点
44 NMOSトランジスタ
46 接点
50 リフレッシュの回路
52 回路
60 シリコン基板
61 第2の基板
62 成長基板
63 第3の基板
64 ハンドル基板
66 トレンチ
68 受動基板
Claims (9)
- 発光パネル(10)の製造方法であって、
-無機半導体マイクロLED(18)を形成する半導体層の積層体と、前記マイクロLEDのための電気接続部(26、28)のアレイと、を備える、第1の基板(61)を製造する段階であって、前記電気接続部(26、28)が前記第1の基板の第1の表面(36)に配置されるような方法で前記第1の基板の製造が行われる段階、
-前記第1の基板(61)から独立した第2のシリコン基板(60)に、トランジスタベースの前記マイクロLED(18)を制御するための回路(20)のアレイを製造する段階であって、前記マイクロLEDの制御用の第1の接続部(28)が、前記第2の基板の第1の表面(34)に配置され、前記発光パネルの駆動用の第2の接続部(32、42、46)が、前記第2の基板の第2の表面に配置されるように、前記製造が行われる段階、
-前記マイクロLEDの電気接続部を前記制御回路の第1の電気接続部に電気的に接続するために、前記第1の基板(61)の第1の表面及び前記第2の基板(62)の第1の表面の一方を他方に配置し、前記表面を互いに固定し、それによって、電子マイクロチップ(16)のアレイを備える第3の基板を得る段階であって、各々がマイクロLED(18)及び制御回路(20)の積層体で形成される段階、
-移送基板(64)及び前記マイクロチップ(16)のアレイを備えるマイクロチップ移送構造体(16、64)を製造する段階であって、各マイクロチップが、そのマイクロLEDによってのみ前記移送基板に固定され、前記マイクロチップの周囲で前記第3の基板にトレンチ(66)を形成することによって個別化される段階、
-前記発光パネルを駆動するための信号を供給するための電気接続部を備える、前記移送基板から独立した第4の基板(68)を製造する段階であって、前記接続部が、前記第4の基板の第1の表面に配置される段階、
-前記第4の基板の第1の表面に前記移送構造体を配置し、前記制御回路の第2の接続部を前記第4の基板の電気接続部に接続するために前記第4の基板の第1の表面に前記マイクロチップを固定し、前記移送基板から前記マイクロチップを分離する段階、
を含む、発光パネル(10)の製造方法。 - 前記マイクロチップ移送構造体(16、64)の製造が、
-前記第3の基板を前記移送基板(64)に配置し、一時的に結合する段階、及び、
-次いで、前記移送基板に至るまで前記マイクロチップの周囲にトレンチ(66)を形成する段階、を含む、請求項1に記載の発光パネルの製造方法。 - -前記第1の基板の製造が、成長基板(62)を製造し、前記マイクロLED(18)を形成する半導体層をエピタキシャル成長によって成長させる段階を含み、前記成長基板が、前記マイクロチップ移送構造体の基板を形成し、
-前記マイクロチップ移送構造体の製造が、前記移送基板に至るまで前記マイクロチップの周囲にトレンチ(66)を形成する段階を含み、
-前記移送基板からの前記マイクロチップの分離が、前記移送基板からのその分離を得るために、前記マイクロチップ上における前記移送基板の、それに垂直なレーザー照射を含む、請求項1に記載の発光パネルの製造方法。 - -前記移送構造体の前記マイクロチップ(16)のアレイが、第1の繰り返しピッチを示し、
-前記第4の基板(68)の電気接続部が、前記第1の繰り返しピッチより大きな第2の繰り返しピッチを有してアレイ状に配置され、
-前記第1の移送構造体(16、64)の移送、前記第4の基板(68)の第1の表面に対する前記マイクロチップの固定、及び、前記移送基板からの前記マイクロチップ(16)の分離が、
前記第4の基板の第1の位置に前記移送構造体を配置する段階、
前記第1の位置に少なくとも1つの第1のマイクロチップを固定する段階、
前記移送構造体及び前記第4の基板を互いに対して前記第2の繰り返しピッチによって移動することによって、前記第4の基板の第2の位置に前記移送構造体を配置する段階、及び、
前記第2の位置に少なくとも1つの第2のマイクロチップを固定する段階を含む、請求項1から3の何れか一項に記載の発光パネルの製造方法。 - 前記第2の基板における制御回路(20)が、ASIC製造技術に従って製造される、請求項1から4の何れか一項に記載の発光パネルの製造方法。
- 前記第4の基板(68)が、電気接続部のみを備える、請求項1から5の何れか一項に記載の発光パネルの製造方法。
- 前記第1の基板のマイクロLED(18)を形成する積層体が、窒化ガリウム、及び/又は、窒化インジウムガリウム、及び/又は、窒化アルミニウムガリウムで作られる、請求項1から6の何れか一項に記載の発光パネルの製造方法。
- -電気接続部を備える基板(68)、及び、
-前記基板(68)に固定され、駆動されるように前記電気接続部に接続されるマイクロチップ(16)のアレイ、を備え、
各マイクロチップが、
シリコン容積内に形成されたトランジスタベースの能動制御回路(20)であって、前記回路が前記基板の接続部に接続される能動制御回路(20)と、
前記制御回路に固定され、制御されるようにそれに接続されるマイクロLED(18)との積層体を備える、発光パネル。 - 前記マイクロLEDが、窒化ガリウム、及び/又は、窒化インジウムガリウム、及び/又は、窒化アルミニウムガリウムで作られる、請求項8に記載の発光パネル。
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- 2016-11-15 EP EP16809992.7A patent/EP3381060B1/fr active Active
- 2016-11-15 WO PCT/FR2016/052957 patent/WO2017089676A1/fr active Application Filing
- 2016-11-15 KR KR1020187004990A patent/KR102560977B1/ko active IP Right Grant
- 2016-11-15 CN CN201680049300.6A patent/CN107924964B/zh active Active
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TW201729396A (zh) | 2017-08-16 |
US10685945B2 (en) | 2020-06-16 |
FR3044467A1 (fr) | 2017-06-02 |
KR20180088366A (ko) | 2018-08-03 |
JP7003032B2 (ja) | 2022-01-20 |
FR3044467B1 (fr) | 2018-08-10 |
EP3381060B1 (fr) | 2019-10-23 |
US20180247922A1 (en) | 2018-08-30 |
CN107924964B (zh) | 2020-09-25 |
KR102560977B1 (ko) | 2023-07-27 |
TWI710103B (zh) | 2020-11-11 |
JP2018538554A (ja) | 2018-12-27 |
EP3381060A1 (fr) | 2018-10-03 |
WO2017089676A1 (fr) | 2017-06-01 |
CN107924964A (zh) | 2018-04-17 |
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