JP2018538554A - 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 - Google Patents
照明フェイスプレート及びこのような照明フェイスプレートの製造方法 Download PDFInfo
- Publication number
- JP2018538554A JP2018538554A JP2018510432A JP2018510432A JP2018538554A JP 2018538554 A JP2018538554 A JP 2018538554A JP 2018510432 A JP2018510432 A JP 2018510432A JP 2018510432 A JP2018510432 A JP 2018510432A JP 2018538554 A JP2018538554 A JP 2018538554A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- manufacturing
- microchip
- transfer
- micro led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 77
- 238000005286 illumination Methods 0.000 title 2
- 239000000758 substrate Substances 0.000 claims abstract description 134
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 238000012546 transfer Methods 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 38
- 239000004065 semiconductor Substances 0.000 claims description 20
- 229910002601 GaN Inorganic materials 0.000 claims description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000003252 repetitive effect Effects 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 description 20
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 229910005540 GaP Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- CTNCAPKYOBYQCX-UHFFFAOYSA-N [P].[As] Chemical compound [P].[As] CTNCAPKYOBYQCX-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 210000004180 plasmocyte Anatomy 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Control Of El Displays (AREA)
Abstract
Description
−無機半導体マイクロLEDを形成する半導体層の積層体と、前記マイクロLEDのための電気接続部のアレイと、を備える、第1の基板を製造する段階であって、前記電気接続部が前記第1の基板の第1の表面に配置されるような方法で前記第1の基板の製造が行われる段階、
−前記第1の基板から独立した第2のシリコン基板に、前記マイクロLEDを制御するためのトランジスタベースの回路のアレイを製造する段階であって、前記マイクロLEDの制御用の第1の接続部が、前記第2の基板の第1の表面に配置され、前記発光パネルの駆動用の第2の接続部が、前記第2の基板の第2の表面に配置されるように、前記製造が行われる段階、
−前記マイクロLEDの電気接続部を前記制御回路の第1の電気接続部に電気的に接続するために、前記第1の基板の第1の表面及び前記第2の基板の第1の表面の一方を他方に配置し、前記表面を互いに固定し、それによって、電子マイクロチップのアレイを備える第3の基板を得る段階であって、各々がマイクロLED及び制御回路の積層体で形成される段階、
−移送基板及び前記マイクロチップのアレイを備えるマイクロチップ移送構造体を製造する段階であって、各マイクロチップが、そのマイクロLEDによってのみ前記移送基板に固定され、前記マイクロチップの周囲で前記第3の基板にトレンチを形成することによって個別化される段階、
−前記発光パネルを駆動するための信号を供給するための電気接続部を備える、前記移送基板から独立した第4の基板を製造する段階であって、前記接続部が、前記第4の基板の第1の表面に配置される段階、
−前記第4の基板の第1の表面に前記移送構造体を配置し、前記制御回路の第2の接続部を前記第4の基板の電気接続部に接続するために前記第4の基板の第1の表面に前記マイクロチップを固定し、前記移送基板から前記マイクロチップを分離する段階、
を含む、発光パネルの製造方法を対象とする。
−前記第3の基板を前記移送基板に配置し、一時的に結合する段階、及び、
−次いで、前記移送基板に至るまで前記マイクロチップの周囲にトレンチを形成する段階、を含む。
−前記第1の基板の製造が、成長基板を製造し、前記マイクロLEDを形成する半導体層をエピタキシャル成長によって成長させる段階を含み、前記成長基板が、前記マイクロチップ移送構造体の基板を形成し、
−前記マイクロチップ移送構造体の製造が、前記移送基板に至るまで前記マイクロチップの周囲にトレンチを形成する段階を含み、
−前記移送基板からの前記マイクロチップの分離が、前記移送基板からのその分離を得るために、前記マイクロチップ上における前記移送基板の、それに垂直なレーザー照射を含む。
−前記移送構造体の前記マイクロチップのアレイが、第1の繰り返しピッチを示し、
−前記第4の基板の電気接続部が、前記第1の繰り返しピッチより大きな第2の繰り返しピッチを有してアレイ状に配置され、
−前記第1の移送構造体の配置、前記第4の基板の第1の表面に対する前記マイクロチップの結合、及び、前記移送基板からの前記マイクロチップの分離が、
前記第4の基板の第1の位置に前記移送構造体を配置する段階、
前記第1の位置に少なくとも1つの第1のマイクロチップを固定する段階、
前記移送構造体及び前記第4の基板を互いに対して前記第2の繰り返しピッチによって移動することによって、前記第4の基板の第2の位置に前記移送構造体を配置する段階、及び、
前記第2の位置に少なくとも1つの第2のマイクロチップを固定する段階を含む。
−電気接続部を備える基板、及び、
−前記基板に固定され、駆動されるように前記電気接続部に接続されるマイクロチップのアレイ、を備え、
各マイクロチップが、
シリコン容積内に形成されたトランジスタベースの能動制御回路であって、前記回路が前記基板の接続部に接続される能動制御回路と、
前記制御回路に固定され、制御されるようにそれに接続されるマイクロLEDとの積層体を備える、発光パネルを対象とする。
−パネル制御信号DATA及びSCANを供給し、電力供給電圧Vp及びVnを供給するために、例えば電気接点及びトラックである導電体を含むだけである受動電子接続基板12、及び、
−受動基板12に固定され、その電気接続部に接続される発光マイクロチップ16のアレイ14を備え、
そのマイクロチップは、例えば画像ディスプレイ用に空間的に配置される。
−マイクロLED18の状態(例えば、オン又はオフ)を設定する信号DATAを受けるためにマイクロチップ14の出力接点40に接続されたドレインを有し、マイクロLED18の状態を更新することを可能にしたり、しなかったりする信号SCANを受けるためにマイクロチップ14の出力接点42に接続されるゲートを有する第1のPMOSトランジスタ38を備える。
−第1のPMOSトランジスタ38のソースに接続されるゲートを有し、第2の電力供給電圧Vpの印加のためのLEDマイクロチップの出力接点46に接続されるドレインを有し、マイクロLED18の接点28に接続されるソースを有する第2のNMOSトランジスタ44を備える。第2のトランジスタ44は、マイクロLED18の接続、及び、接点32及び28の間の電位差Vp−Vnの印加をこのように可能にし、マイクロLED18への電流の流入を可能にする。
−2つのリフレッシュ間のマイクロLED18の状態を維持するために第2のトランジスタ44のゲート及びドレインの間に接続されるキャパシタ48を備える。
12 受動基板
14 アレイ
16 発光マイクロチップ
18 無機半導体マイクロLED
20 制御回路
22 半導体層
24 半導体層
26 電気接点
28 電気接点
30 接触トランスファ
32 接点
34 下部表面
36 下部表面
38 PMOSトランジスタ
40 接点
42 接点
44 NMOSトランジスタ
46 接点
50 リフレッシュの回路
52 回路
60 シリコン基板
61 第2の基板
62 成長基板
63 第3の基板
64 ハンドル基板
66 トレンチ
68 受動基板
Claims (9)
- 発光パネル(10)の製造方法であって、
−無機半導体マイクロLED(18)を形成する半導体層の積層体と、前記マイクロLEDのための電気接続部(26、28)のアレイと、を備える、第1の基板(61)を製造する段階であって、前記電気接続部(26、28)が前記第1の基板の第1の表面(36)に配置されるような方法で前記第1の基板の製造が行われる段階、
−前記第1の基板(61)から独立した第2のシリコン基板(60)に、トランジスタベースの前記マイクロLED(18)を制御するための回路(20)のアレイを製造する段階であって、前記マイクロLEDの制御用の第1の接続部(28)が、前記第2の基板の第1の表面(34)に配置され、前記発光パネルの駆動用の第2の接続部(32、42、46)が、前記第2の基板の第2の表面に配置されるように、前記製造が行われる段階、
−前記マイクロLEDの電気接続部を前記制御回路の第1の電気接続部に電気的に接続するために、前記第1の基板(61)の第1の表面及び前記第2の基板(62)の第1の表面の一方を他方に配置し、前記表面を互いに固定し、それによって、電子マイクロチップ(16)のアレイを備える第3の基板を得る段階であって、各々がマイクロLED(18)及び制御回路(20)の積層体で形成される段階、
−移送基板(64)及び前記マイクロチップ(16)のアレイを備えるマイクロチップ移送構造体(16、64)を製造する段階であって、各マイクロチップが、そのマイクロLEDによってのみ前記移送基板に固定され、前記マイクロチップの周囲で前記第3の基板にトレンチ(66)を形成することによって個別化される段階、
−前記発光パネルを駆動するための信号を供給するための電気接続部を備える、前記移送基板から独立した第4の基板(68)を製造する段階であって、前記接続部が、前記第4の基板の第1の表面に配置される段階、
−前記第4の基板の第1の表面に前記移送構造体を配置し、前記制御回路の第2の接続部を前記第4の基板の電気接続部に接続するために前記第4の基板の第1の表面に前記マイクロチップを固定し、前記移送基板から前記マイクロチップを分離する段階、
を含む、発光パネル(10)の製造方法。 - 前記マイクロチップ移送構造体(16、64)の製造が、
−前記第3の基板を前記移送基板(64)に配置し、一時的に結合する段階、及び、
−次いで、前記移送基板に至るまで前記マイクロチップの周囲にトレンチ(66)を形成する段階、を含む、請求項1に記載の発光パネルの製造方法。 - −前記第1の基板の製造が、成長基板(62)を製造し、前記マイクロLED(18)を形成する半導体層をエピタキシャル成長によって成長させる段階を含み、前記成長基板が、前記マイクロチップ移送構造体の基板を形成し、
−前記マイクロチップ移送構造体の製造が、前記移送基板に至るまで前記マイクロチップの周囲にトレンチ(66)を形成する段階を含み、
−前記移送基板からの前記マイクロチップの分離が、前記移送基板からのその分離を得るために、前記マイクロチップ上における前記移送基板の、それに垂直なレーザー照射を含む、請求項1に記載の発光パネルの製造方法。 - −前記移送構造体の前記マイクロチップ(16)のアレイが、第1の繰り返しピッチを示し、
−前記第4の基板(68)の電気接続部が、前記第1の繰り返しピッチより大きな第2の繰り返しピッチを有してアレイ状に配置され、
−前記第1の移送構造体(16、64)の移送、前記第4の基板(68)の第1の表面に対する前記マイクロチップの固定、及び、前記移送基板からの前記マイクロチップ(16)の分離が、
前記第4の基板の第1の位置に前記移送構造体を配置する段階、
前記第1の位置に少なくとも1つの第1のマイクロチップを固定する段階、
前記移送構造体及び前記第4の基板を互いに対して前記第2の繰り返しピッチによって移動することによって、前記第4の基板の第2の位置に前記移送構造体を配置する段階、及び、
前記第2の位置に少なくとも1つの第2のマイクロチップを固定する段階を含む、請求項1から3の何れか一項に記載の発光パネルの製造方法。 - 前記第2の基板における制御回路(20)が、ASIC製造技術に従って製造される、請求項1から4の何れか一項に記載の発光パネルの製造方法。
- 前記第4の基板(68)が、電気接続部のみを備える、請求項1から5の何れか一項に記載の発光パネルの製造方法。
- 前記第1の基板のマイクロLED(18)を形成する積層体が、窒化ガリウム、及び/又は、窒化インジウムガリウム、及び/又は、窒化アルミニウムガリウムで作られる、請求項1から6の何れか一項に記載の発光パネルの製造方法。
- −電気接続部を備える基板(68)、及び、
−前記基板(68)に固定され、駆動されるように前記電気接続部に接続されるマイクロチップ(16)のアレイ、を備え、
各マイクロチップが、
シリコン容積内に形成されたトランジスタベースの能動制御回路(20)であって、前記回路が前記基板の接続部に接続される能動制御回路(20)と、
前記制御回路に固定され、制御されるようにそれに接続されるマイクロLED(18)との積層体を備える、発光パネル。 - 前記マイクロLEDが、窒化ガリウム、及び/又は、窒化インジウムガリウム、及び/又は、窒化アルミニウムガリウムで作られる、請求項8に記載の発光パネル。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021184031A JP2022025143A (ja) | 2015-11-26 | 2021-11-11 | 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1561421A FR3044467B1 (fr) | 2015-11-26 | 2015-11-26 | Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse |
FR1561421 | 2015-11-26 | ||
PCT/FR2016/052957 WO2017089676A1 (fr) | 2015-11-26 | 2016-11-15 | Dalle lumineuse et procédé de fabrication d'une telle dalle lumineuse |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021184031A Division JP2022025143A (ja) | 2015-11-26 | 2021-11-11 | 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018538554A true JP2018538554A (ja) | 2018-12-27 |
JP7003032B2 JP7003032B2 (ja) | 2022-01-20 |
Family
ID=55182406
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018510432A Active JP7003032B2 (ja) | 2015-11-26 | 2016-11-15 | 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 |
JP2021184031A Pending JP2022025143A (ja) | 2015-11-26 | 2021-11-11 | 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021184031A Pending JP2022025143A (ja) | 2015-11-26 | 2021-11-11 | 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US10685945B2 (ja) |
EP (1) | EP3381060B1 (ja) |
JP (2) | JP7003032B2 (ja) |
KR (1) | KR102560977B1 (ja) |
CN (1) | CN107924964B (ja) |
FR (1) | FR3044467B1 (ja) |
TW (1) | TWI710103B (ja) |
WO (1) | WO2017089676A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021508174A (ja) * | 2017-12-20 | 2021-02-25 | ルミレッズ リミテッド ライアビリティ カンパニー | 埋め込みトランジスタを有するセグメント型led |
WO2021171835A1 (ja) * | 2020-02-27 | 2021-09-02 | 株式会社ジャパンディスプレイ | 表示装置 |
Families Citing this family (76)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017109768A1 (en) | 2015-12-24 | 2017-06-29 | Vuereal Inc. | Vertical solid state devices |
CN105870265A (zh) | 2016-04-19 | 2016-08-17 | 京东方科技集团股份有限公司 | 发光二极管基板及其制备方法、显示装置 |
US10998352B2 (en) | 2016-11-25 | 2021-05-04 | Vuereal Inc. | Integration of microdevices into system substrate |
US10978530B2 (en) | 2016-11-25 | 2021-04-13 | Vuereal Inc. | Integration of microdevices into system substrate |
WO2018096455A1 (en) * | 2016-11-25 | 2018-05-31 | Vuereal Inc. | Integration of micro-devices into system substrate |
US10916523B2 (en) | 2016-11-25 | 2021-02-09 | Vuereal Inc. | Microdevice transfer setup and integration of micro-devices into system substrate |
US10770440B2 (en) * | 2017-03-15 | 2020-09-08 | Globalfoundries Inc. | Micro-LED display assembly |
WO2018169968A1 (en) | 2017-03-16 | 2018-09-20 | Invensas Corporation | Direct-bonded led arrays and applications |
DE102017106755B4 (de) * | 2017-03-29 | 2022-08-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
US20180287027A1 (en) | 2017-03-30 | 2018-10-04 | Vuereal Inc. | Vertical solid-state devices |
US11600743B2 (en) | 2017-03-30 | 2023-03-07 | Vuereal Inc. | High efficient microdevices |
US11721784B2 (en) | 2017-03-30 | 2023-08-08 | Vuereal Inc. | High efficient micro devices |
US10663794B2 (en) * | 2017-05-03 | 2020-05-26 | Innolux Corporation | Display devices |
FR3066320B1 (fr) * | 2017-05-11 | 2019-07-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'un dispositif d'affichage emissif a led |
TWI633681B (zh) * | 2017-06-09 | 2018-08-21 | 美商晶典有限公司 | 微發光二極體顯示模組的製造方法 |
TWI611573B (zh) * | 2017-06-09 | 2018-01-11 | 晶典有限公司 | 微發光二極體顯示模組的製造方法 |
FR3068819B1 (fr) | 2017-07-04 | 2019-11-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d'affichage a leds |
FR3069378B1 (fr) * | 2017-07-21 | 2019-08-23 | Aledia | Dispositif optoelectronique |
FR3070793B1 (fr) * | 2017-09-05 | 2022-07-22 | Commissariat Energie Atomique | Procede de fabrication d'un dispositif d'affichage emissif a led |
DE102017123290A1 (de) * | 2017-10-06 | 2019-04-11 | Osram Opto Semiconductors Gmbh | Lichtemittierendes Bauteil, Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
DE102017125276A1 (de) | 2017-10-27 | 2019-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung mehrere Halbleiterchips und Halbleiterchip |
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
FR3075461B1 (fr) * | 2017-12-20 | 2020-02-14 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de fabrication d'une heterostructure comportant des structures elementaires photoniques en materiau iii-v a la surface d'un substrat a base de silicium |
FR3076170B1 (fr) * | 2017-12-22 | 2020-05-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de report de structures electroluminescentes |
US11348968B2 (en) * | 2018-01-02 | 2022-05-31 | Hongyu Liu | Display device structure |
TWI662334B (zh) * | 2018-02-06 | 2019-06-11 | 友達光電股份有限公司 | 顯示模組與顯示裝置 |
US11169326B2 (en) | 2018-02-26 | 2021-11-09 | Invensas Bonding Technologies, Inc. | Integrated optical waveguides, direct-bonded waveguide interface joints, optical routing and interconnects |
US11927871B2 (en) * | 2018-03-01 | 2024-03-12 | Hes Ip Holdings, Llc | Near-eye displaying method capable of multiple depths of field imaging |
FR3082998B1 (fr) * | 2018-06-25 | 2021-01-08 | Commissariat Energie Atomique | Dispositif et procedes pour le report de puces d'un substrat source vers un substrat destination |
TWI686973B (zh) * | 2018-07-16 | 2020-03-01 | 友達光電股份有限公司 | 顯示裝置及其製造方法 |
TWI681556B (zh) * | 2018-09-11 | 2020-01-01 | 友達光電股份有限公司 | 發光二極體顯示裝置及其製造方法 |
US11271033B2 (en) | 2018-09-27 | 2022-03-08 | Lumileds Llc | Micro light emitting devices |
US20210343905A1 (en) * | 2018-11-16 | 2021-11-04 | Sakai Display Products Corporation | Micro led device and production method therefor |
US20220059521A1 (en) | 2019-01-02 | 2022-02-24 | Lumiode, Inc. | System and method of fabricating display structures |
EP3891795A4 (en) * | 2019-01-07 | 2022-08-31 | Lumiode, Inc. | METHODS, OBJECTS AND DEVICES WITH SEMICONDUCTOR SWITCHES AND DRIVER CIRCUITS ON COMPOUND SEMICONDUCTOR CHIPLETS |
CN109980078B (zh) * | 2019-04-18 | 2020-06-23 | 京东方科技集团股份有限公司 | 发光模组及其制造方法、显示装置 |
US11380815B2 (en) * | 2019-06-21 | 2022-07-05 | PlayNitride Display Co., Ltd. | Semiconductor material substrate, micro light emitting diode panel and method of fabricating the same |
KR102174847B1 (ko) * | 2019-09-05 | 2020-11-05 | (주)라이타이저 | 디스플레이 장치의 제조 방법 및 디스플레이 장치 |
US11777059B2 (en) | 2019-11-20 | 2023-10-03 | Lumileds Llc | Pixelated light-emitting diode for self-aligned photoresist patterning |
US11762200B2 (en) * | 2019-12-17 | 2023-09-19 | Adeia Semiconductor Bonding Technologies Inc. | Bonded optical devices |
FR3107611B1 (fr) | 2020-02-26 | 2022-03-04 | Aledia | Ecran d’affichage à résolution multiple et procédé de réalisation |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
TWI740438B (zh) * | 2020-03-31 | 2021-09-21 | 聚積科技股份有限公司 | 微型發光二極體的轉移方法 |
CN111681598A (zh) * | 2020-06-03 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | 显示面板及其制造方法 |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US12040432B2 (en) | 2020-10-30 | 2024-07-16 | Lumileds Llc | Light emitting diode devices with patterned TCO layer including different thicknesses |
FR3116648B1 (fr) | 2020-11-20 | 2022-10-28 | Commissariat Energie Atomique | Dispositif et procédé d'assemblage fluidique de micropuces sur un substrat |
KR102276372B1 (ko) * | 2020-11-30 | 2021-07-12 | 한국광기술원 | 초박막 플렉시블 투명 디스플레이 장치 및 그의 제조 방법 |
US11393946B2 (en) * | 2020-11-30 | 2022-07-19 | PlayNitride Display Co., Ltd. | Micro LED structure |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
FR3117265B1 (fr) | 2020-12-03 | 2023-01-06 | Commissariat Energie Atomique | Outil de transfert collectif de micropuces d'un substrat source vers un substrat destination |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
TWI770813B (zh) * | 2021-02-08 | 2022-07-11 | 友達光電股份有限公司 | 顯示裝置及其製造方法 |
FR3119931B1 (fr) | 2021-02-17 | 2024-04-05 | Commissariat Energie Atomique | Dispositif optoélectronique et procédé de fabrication d'un tel dispositif |
FR3120988B1 (fr) | 2021-03-18 | 2023-03-24 | Commissariat Energie Atomique | Dispositif d'affichage émissif à LED |
TWI796970B (zh) * | 2021-04-20 | 2023-03-21 | 友達光電股份有限公司 | 半導體裝置以及顯示裝置 |
FR3123493B1 (fr) | 2021-05-26 | 2023-05-26 | Commissariat Energie Atomique | Dispositif d’affichage a adressage par groupes de pixels |
US20240234181A1 (en) * | 2021-05-27 | 2024-07-11 | Apple Inc. | Single-Pick-Multiple-Print Micro LED Mass Transfer with Elastomer Stamp |
KR20240018582A (ko) | 2021-06-04 | 2024-02-13 | 텍투스 코포레이션 | 통합 파이프라인이 있는 디스플레이 픽셀 |
FR3125358A1 (fr) | 2021-07-16 | 2023-01-20 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d'affichage interactif et procédé de fabrication d'un tel dispositif |
FR3126262A1 (fr) | 2021-08-18 | 2023-02-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d’affichage a compression et decompression locales des donnees numeriques affichees |
EP4138140A1 (fr) * | 2021-08-19 | 2023-02-22 | Commissariat à l'énergie atomique et aux énergies alternatives | Procédé de fabrication d'un dispositif optoélectronique |
FR3126260A1 (fr) * | 2021-08-19 | 2023-02-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de fabrication d'un dispositif optoélectronique |
FR3126261B1 (fr) | 2021-08-19 | 2023-07-14 | Commissariat Energie Atomique | Dispositif de capture d'images et procédé de fabrication d'un tel dispositif |
FR3127073B1 (fr) | 2021-09-13 | 2024-01-19 | Commissariat Energie Atomique | Dispositif optoelectronique a composants emissif et photodetecteur superposes |
FR3129747A1 (fr) | 2021-11-29 | 2023-06-02 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d’affichage a dechiffrement local des donnees numeriques |
FR3130046B1 (fr) | 2021-12-02 | 2024-01-19 | Commissariat Energie Atomique | Dispositif d'imagerie à rayons X |
FR3130045B1 (fr) | 2021-12-02 | 2024-01-19 | Commissariat Energie Atomique | Dispositif d'imagerie à rayons X |
FR3142061A1 (fr) | 2022-11-14 | 2024-05-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Puce optoélectronique émissive monolithique |
FR3142288A1 (fr) | 2022-11-18 | 2024-05-24 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d'affichage et procédé de fabrication d'un tel dispositif |
FR3143842A1 (fr) * | 2022-12-20 | 2024-06-21 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procédé de réalisation d’un dispositif électronique |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
JP2002261335A (ja) * | 2000-07-18 | 2002-09-13 | Sony Corp | 画像表示装置及び画像表示装置の製造方法 |
JP2002314053A (ja) * | 2001-04-19 | 2002-10-25 | Sony Corp | チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP2003051616A (ja) * | 2001-08-03 | 2003-02-21 | Sony Corp | 発光装置 |
JP2008235792A (ja) * | 2007-03-23 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
US20100317132A1 (en) * | 2009-05-12 | 2010-12-16 | Rogers John A | Printed Assemblies of Ultrathin, Microscale Inorganic Light Emitting Diodes for Deformable and Semitransparent Displays |
WO2012140766A1 (ja) * | 2011-04-14 | 2012-10-18 | パイオニア株式会社 | 光学素子、ヘッドアップディスプレイ及び光源ユニット |
US20140191246A1 (en) * | 2013-01-09 | 2014-07-10 | Nthdegree Technologies Worldwide Inc. | Bonding transistor wafer to led wafer to form active led modules |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP5078241B2 (ja) * | 2004-08-13 | 2012-11-21 | 株式会社半導体エネルギー研究所 | 発光素子を用いた発光装置および発光素子の駆動方法並びに照明器具 |
JP4890010B2 (ja) * | 2004-12-06 | 2012-03-07 | 株式会社半導体エネルギー研究所 | 表示装置及びサブフレームの設定方法 |
WO2008109296A1 (en) * | 2007-03-08 | 2008-09-12 | 3M Innovative Properties Company | Array of luminescent elements |
FR2928033B1 (fr) | 2008-02-22 | 2010-07-30 | Commissariat Energie Atomique | Composant de connexion muni d'inserts creux. |
DE102008049777A1 (de) * | 2008-05-23 | 2009-11-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Modul |
TWI447892B (zh) * | 2009-04-20 | 2014-08-01 | Ind Tech Res Inst | 發光裝置與其製造方法 |
WO2011071559A1 (en) * | 2009-12-09 | 2011-06-16 | Nano And Advanced Materials Institute Limited | Method for manufacturing a monolithic led micro-display on an active matrix panel using flip-chip technology and display apparatus having the monolithic led micro-display |
CN102959740B (zh) | 2010-09-14 | 2018-08-03 | 原子能与替代能源委员会 | 用于光发射的基于纳米线的光电器件 |
FR2975532B1 (fr) | 2011-05-18 | 2013-05-10 | Commissariat Energie Atomique | Connexion electrique en serie de nanofils emetteurs de lumiere |
DE102011102032A1 (de) * | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Display mit einer Mehrzahl derartiger Module |
FR2977370B1 (fr) | 2011-06-30 | 2013-11-22 | Commissariat Energie Atomique | Composant de connexion muni d'inserts creux |
JP5958055B2 (ja) * | 2011-07-29 | 2016-07-27 | セイコーエプソン株式会社 | 電気光学装置、電気光学装置の駆動方法および電子機器 |
WO2014024108A1 (en) * | 2012-08-07 | 2014-02-13 | Koninklijke Philips N.V. | Led package and manufacturing method |
US9331230B2 (en) * | 2012-10-30 | 2016-05-03 | Cbrite Inc. | LED die dispersal in displays and light panels with preserving neighboring relationship |
DE102012112302A1 (de) * | 2012-12-14 | 2014-06-18 | Osram Opto Semiconductors Gmbh | Anzeigevorrichtung und Verfahren zur Herstellung einer Anzeigevorrichtung |
FR3005788B1 (fr) * | 2013-05-14 | 2016-10-21 | Commissariat Energie Atomique | Dispositif optoelectronique et son procede de fabrication |
CN104282678A (zh) * | 2013-07-09 | 2015-01-14 | 鸿富锦精密工业(深圳)有限公司 | 具有光感测功能的发光显示器 |
-
2015
- 2015-11-26 FR FR1561421A patent/FR3044467B1/fr not_active Expired - Fee Related
-
2016
- 2016-11-15 CN CN201680049300.6A patent/CN107924964B/zh active Active
- 2016-11-15 KR KR1020187004990A patent/KR102560977B1/ko active IP Right Grant
- 2016-11-15 US US15/754,539 patent/US10685945B2/en active Active
- 2016-11-15 WO PCT/FR2016/052957 patent/WO2017089676A1/fr active Application Filing
- 2016-11-15 EP EP16809992.7A patent/EP3381060B1/fr active Active
- 2016-11-15 JP JP2018510432A patent/JP7003032B2/ja active Active
- 2016-11-21 TW TW105138014A patent/TWI710103B/zh active
-
2021
- 2021-11-11 JP JP2021184031A patent/JP2022025143A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261335A (ja) * | 2000-07-18 | 2002-09-13 | Sony Corp | 画像表示装置及び画像表示装置の製造方法 |
JP2002141492A (ja) * | 2000-10-31 | 2002-05-17 | Canon Inc | 発光ダイオードディスプレイパネル及びその製造方法 |
JP2002314053A (ja) * | 2001-04-19 | 2002-10-25 | Sony Corp | チップ部品の転写方法及びこれを用いた素子の配列方法、画像表示装置の製造方法 |
JP2003051616A (ja) * | 2001-08-03 | 2003-02-21 | Sony Corp | 発光装置 |
JP2008235792A (ja) * | 2007-03-23 | 2008-10-02 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
US20100317132A1 (en) * | 2009-05-12 | 2010-12-16 | Rogers John A | Printed Assemblies of Ultrathin, Microscale Inorganic Light Emitting Diodes for Deformable and Semitransparent Displays |
WO2012140766A1 (ja) * | 2011-04-14 | 2012-10-18 | パイオニア株式会社 | 光学素子、ヘッドアップディスプレイ及び光源ユニット |
US20140191246A1 (en) * | 2013-01-09 | 2014-07-10 | Nthdegree Technologies Worldwide Inc. | Bonding transistor wafer to led wafer to form active led modules |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021508174A (ja) * | 2017-12-20 | 2021-02-25 | ルミレッズ リミテッド ライアビリティ カンパニー | 埋め込みトランジスタを有するセグメント型led |
JP7138711B2 (ja) | 2017-12-20 | 2022-09-16 | ルミレッズ リミテッド ライアビリティ カンパニー | 埋め込みトランジスタを有するセグメント型led |
US11749790B2 (en) | 2017-12-20 | 2023-09-05 | Lumileds Llc | Segmented LED with embedded transistors |
WO2021171835A1 (ja) * | 2020-02-27 | 2021-09-02 | 株式会社ジャパンディスプレイ | 表示装置 |
JP2021136335A (ja) * | 2020-02-27 | 2021-09-13 | 株式会社ジャパンディスプレイ | 表示装置 |
JP7479164B2 (ja) | 2020-02-27 | 2024-05-08 | 株式会社ジャパンディスプレイ | 表示装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2022025143A (ja) | 2022-02-09 |
EP3381060A1 (fr) | 2018-10-03 |
KR102560977B1 (ko) | 2023-07-27 |
TW201729396A (zh) | 2017-08-16 |
JP7003032B2 (ja) | 2022-01-20 |
EP3381060B1 (fr) | 2019-10-23 |
WO2017089676A1 (fr) | 2017-06-01 |
FR3044467A1 (fr) | 2017-06-02 |
US10685945B2 (en) | 2020-06-16 |
FR3044467B1 (fr) | 2018-08-10 |
KR20180088366A (ko) | 2018-08-03 |
CN107924964A (zh) | 2018-04-17 |
TWI710103B (zh) | 2020-11-11 |
CN107924964B (zh) | 2020-09-25 |
US20180247922A1 (en) | 2018-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7003032B2 (ja) | 照明フェイスプレート及びこのような照明フェイスプレートの製造方法 | |
KR20200026845A (ko) | 반도체 발광소자를 이용한 디스플레이 장치 | |
US20230119947A1 (en) | A substrate for manufacturing display device and a manufacturing method using the same | |
US20230047241A1 (en) | Display device using semiconductor light-emitting element and manufacturing method thereof | |
KR102200046B1 (ko) | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 | |
US20220351993A1 (en) | Substrate for producing display device, and method for producing display device | |
US20230084381A1 (en) | Display device using semiconductor light-emitting devices | |
KR102233158B1 (ko) | 반도체 발광소자를 이용한 디스플레이 장치의 제조방법 | |
US20230045160A1 (en) | Method for manufacturing a display device using a semiconductor light emitting device and a self-assembly apparatus used therefor | |
US20220351992A1 (en) | Substrate for manufacturing display device and method for manufacturing display device | |
US20230005888A1 (en) | Semiconductor light-emitting element supply device and supply method | |
US20220302351A1 (en) | Display device using semiconductor light emitting diode | |
JP2022093393A (ja) | ディスプレイパネルおよびディスプレイパネル作製方法 | |
US20230031398A1 (en) | Display device using semiconductor light-emitting element, and manufacturing method therefor | |
US20230023582A1 (en) | Display device using semiconductor light emitting device | |
KR102659765B1 (ko) | 디스플레이 장치 제조를 위한 기판 및 디스플레이 장치의 제조방법 | |
US20240072213A1 (en) | Display device using semiconductor light-emitting elements | |
US20240038930A1 (en) | Display device using semiconductor light-emitting devices, and method for manufacturing same | |
KR20230021016A (ko) | 디스플레이 장치 제조용 기판 및 이를 이용한 디스플레이 장치의 제조방법 | |
KR20200026777A (ko) | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 | |
US12080825B2 (en) | Method for manufacturing display device using semiconductor light emitting device | |
US20230299055A1 (en) | Substrate for manufacturing display device, and method for manufacturing display device by using same | |
US20220254951A1 (en) | Method for manufacturing display device using semiconductor light emitting device | |
US12080689B2 (en) | Display device using semiconductor light-emitting elements and manufacturing method therefor | |
US20230079059A1 (en) | Substrate for manufacturing display device and manufacturing method therefor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20191008 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20201026 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20201102 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210202 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20210712 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211111 |
|
C60 | Trial request (containing other claim documents, opposition documents) |
Free format text: JAPANESE INTERMEDIATE CODE: C60 Effective date: 20211111 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20211118 |
|
C21 | Notice of transfer of a case for reconsideration by examiners before appeal proceedings |
Free format text: JAPANESE INTERMEDIATE CODE: C21 Effective date: 20211122 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20211213 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20211228 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7003032 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |