CN110226229A - 一种显示器件结构 - Google Patents

一种显示器件结构 Download PDF

Info

Publication number
CN110226229A
CN110226229A CN201880005881.2A CN201880005881A CN110226229A CN 110226229 A CN110226229 A CN 110226229A CN 201880005881 A CN201880005881 A CN 201880005881A CN 110226229 A CN110226229 A CN 110226229A
Authority
CN
China
Prior art keywords
emitting diode
inorganic light
miniature
display device
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880005881.2A
Other languages
English (en)
Inventor
孙润光
刘宏宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Liu Hongyu
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CN110226229A publication Critical patent/CN110226229A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

本发明涉及一种单元显示像素由微型有源无机发光二极管单元芯片组成的任意曲面显示器件，每个微型有源无机发光二极管单元芯片包括无机发光二极管单元器件和场效应管。任意曲面的衬底上存在导线，而且导线连接每个微型有源无机发光二极管单元芯片。

Description

PCT国内申请，说明书已公开。

Claims (8)

  1. PCT国内申请，权利要求书已公开。
CN201880005881.2A 2018-01-02 2018-01-02 一种显示器件结构 Pending CN110226229A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/000005 WO2019134057A1 (zh) 2018-01-02 2018-01-02 一种显示器件结构

Publications (1)

Publication Number Publication Date
CN110226229A true CN110226229A (zh) 2019-09-10

Family

ID=67143516

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880005881.2A Pending CN110226229A (zh) 2018-01-02 2018-01-02 一种显示器件结构

Country Status (3)

Country Link
US (1) US11348968B2 (zh)
CN (1) CN110226229A (zh)
WO (1) WO2019134057A1 (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110649060B (zh) * 2019-11-01 2022-04-26 京东方科技集团股份有限公司 微发光二极管芯片及制作方法、显示面板制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1256792A (zh) * 1998-03-02 2000-06-14 精工爱普生株式会社 三维器件
CN101660206A (zh) * 2009-09-10 2010-03-03 厦门市三安光电科技有限公司 一种完整性GaN基薄膜的制备方法
CN101847646A (zh) * 2010-02-02 2010-09-29 孙润光 一种无机发光二极管显示装置
CN102396067A (zh) * 2009-04-15 2012-03-28 全球Oled科技有限责任公司 具有多边形小芯片的显示装置
CN103855179A (zh) * 2012-12-03 2014-06-11 孙润光 一种无机发光二极管显示器件结构
CN104350613A (zh) * 2012-04-27 2015-02-11 勒克斯维科技公司 形成具有自对准金属化堆栈的微型led器件的方法
CN105242444A (zh) * 2015-09-18 2016-01-13 友达光电股份有限公司 显示面板
US20160293634A1 (en) * 2015-04-06 2016-10-06 Samsung Display Co., Ltd. Flexible display device and method of manufacturing the same
FR3044467A1 (fr) * 2015-11-26 2017-06-02 Commissariat Energie Atomique Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9252375B2 (en) * 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
CN103995361B (zh) * 2014-06-17 2017-01-11 上海新视觉立体显示科技有限公司 裸眼3d显示像素单元及多视图裸眼3d图像显示设备
CN110060987B (zh) * 2014-06-18 2021-03-12 艾克斯展示公司技术有限公司 微组装led显示器
CN106611764B (zh) * 2015-10-27 2019-12-10 群创光电股份有限公司 显示设备
US10304813B2 (en) * 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
US10091446B2 (en) * 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US10132478B2 (en) * 2016-03-06 2018-11-20 Svv Technology Innovations, Inc. Flexible solid-state illumination devices
US10593657B2 (en) * 2016-11-01 2020-03-17 Innolux Corporation Display devices and methods for forming the same
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
KR102612998B1 (ko) * 2016-12-30 2023-12-11 엘지디스플레이 주식회사 표시 장치 및 이를 이용한 멀티 스크린 표시 장치
CN106782128A (zh) * 2017-01-24 2017-05-31 深圳市华星光电技术有限公司 微发光二极管显示面板及其制造方法
US10312228B2 (en) * 2017-01-25 2019-06-04 Innolux Corporation Display device
KR102060471B1 (ko) * 2017-02-01 2019-12-30 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법
US20190044023A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing semiconductor device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1256792A (zh) * 1998-03-02 2000-06-14 精工爱普生株式会社 三维器件
CN102396067A (zh) * 2009-04-15 2012-03-28 全球Oled科技有限责任公司 具有多边形小芯片的显示装置
CN101660206A (zh) * 2009-09-10 2010-03-03 厦门市三安光电科技有限公司 一种完整性GaN基薄膜的制备方法
CN101847646A (zh) * 2010-02-02 2010-09-29 孙润光 一种无机发光二极管显示装置
CN104350613A (zh) * 2012-04-27 2015-02-11 勒克斯维科技公司 形成具有自对准金属化堆栈的微型led器件的方法
CN103855179A (zh) * 2012-12-03 2014-06-11 孙润光 一种无机发光二极管显示器件结构
US20160293634A1 (en) * 2015-04-06 2016-10-06 Samsung Display Co., Ltd. Flexible display device and method of manufacturing the same
CN105242444A (zh) * 2015-09-18 2016-01-13 友达光电股份有限公司 显示面板
FR3044467A1 (fr) * 2015-11-26 2017-06-02 Commissariat Energie Atomique Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse

Also Published As

Publication number Publication date
US11348968B2 (en) 2022-05-31
WO2019134057A1 (zh) 2019-07-11
US20210167120A1 (en) 2021-06-03

Similar Documents

Publication Publication Date Title
US11108005B2 (en) Array substrate, stretchable display device, and method for manufacturing array substrate
US10074669B2 (en) Display device
US9875999B2 (en) Display substrate and manufacturing method thereof, and display device
US11302760B2 (en) Array substrate and fabrication method thereof, and display device
WO2018227750A1 (zh) 柔性tft基板的制作方法
US9960188B2 (en) Thin film transistor, array substrate, and fabrication method there of, and display apparatus
US10553727B2 (en) Thin film transistor, method of manufacturing the same, and organic light emitting display device including the same
TWI596781B (zh) 半導體裝置
US20170160841A1 (en) Array substrate, touch screen, touch display device, and fabrication method thereof
US20210126016A1 (en) Thin film transistor drive backplane and micro-light emitting diode display
WO2019024760A1 (zh) 像素电路、其制造方法及显示装置
EP2112694A3 (en) Organic light emitting display device and method of manufacturing the same
JP2007134482A (ja) 薄膜トランジスタ装置およびその製造方法、並びに、それを使用した薄膜トランジスタアレイおよび薄膜トランジスタディスプレイ
KR20080073944A (ko) 하이브리드 유기 전계 발광 소자 및 그 제조방법
CN109659347A (zh) 柔性oled显示面板以及显示装置
US20180219184A1 (en) Manufacturing method of amoled pixel driver circuit
CN110265447A (zh) 显示面板及其制备方法、显示装置
KR20210129294A (ko) 표시 장치 및 그 제조 방법
KR20180069974A (ko) 트랜지스터 표시판 및 이를 포함하는 표시 장치
WO2018023955A1 (zh) Oled显示装置的阵列基板及其制造方法
US9373683B2 (en) Thin film transistor
US20220208923A1 (en) Display device and method of providing the same
JP2018194600A (ja) 表示装置
KR20180075783A (ko) 압력 센서 및 이를 구비하는 표시 장치
KR20080062308A (ko) 유기 전계발광소자 및 그 제조방법

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20200330

Address after: 264006 no.414, building 2, No.32 Zhujiang Road, Yantai Economic and Technological Development Zone, Shandong Province

Applicant after: Liu Hongyu

Address before: 201800, room 23, building 475, Lane 102, Tacheng Road, Shanghai, Jiading District

Applicant before: Sun Runguang

Applicant before: Liu Hongyu

TA01 Transfer of patent application right