WO2019134057A1 - 一种显示器件结构 - Google Patents

一种显示器件结构 Download PDF

Info

Publication number
WO2019134057A1
WO2019134057A1 PCT/CN2018/000005 CN2018000005W WO2019134057A1 WO 2019134057 A1 WO2019134057 A1 WO 2019134057A1 CN 2018000005 W CN2018000005 W CN 2018000005W WO 2019134057 A1 WO2019134057 A1 WO 2019134057A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting diode
light emitting
inorganic light
micro
substrate
Prior art date
Application number
PCT/CN2018/000005
Other languages
English (en)
French (fr)
Inventor
孙润光
刘宏宇
Original Assignee
孙润光
刘宏宇
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 孙润光, 刘宏宇 filed Critical 孙润光
Priority to PCT/CN2018/000005 priority Critical patent/WO2019134057A1/zh
Priority to US16/772,801 priority patent/US11348968B2/en
Priority to CN201880005881.2A priority patent/CN110226229A/zh
Publication of WO2019134057A1 publication Critical patent/WO2019134057A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to a display device structure, in particular, a unit display pixel is composed of a micro-inorganic light-emitting diode unit chip.
  • LCD liquid crystal display
  • OLED organic light emitting diode
  • Both of these techniques are to form a thin film transistor on a glass substrate to form an active matrix circuit, fill the liquid crystal to form a liquid crystal cell, or deposit an organic light emitting layer to form an organic light emitting device.
  • Micro-LED micro-inorganic light-emitting diode display technology
  • ⁇ ILED inorganic light-emitting diode unit chip
  • the invention proposes a device structure of an active matrix inorganic light emitting diode display device which can realize an arbitrary curved surface.
  • the display pixels are comprised of micro active inorganic light emitting diode unit chips, each micro active inorganic light emitting diode unit chip comprising a micro inorganic light emitting diode, one or more field effect transistors.
  • the active layer of the field effect transistor included in the micro active inorganic light emitting diode unit chip employs one of the materials of the micro inorganic light emitting diode.
  • the micro active semiconductor light emitting diode unit chip comprises a field effect transistor using two of the materials of the micro inorganic light emitting diode.
  • a wire is present on the substrate, and the wire is connected to each of the micro active inorganic light emitting diode unit chips.
  • the wires present on the substrate may be composed of a metal material, or may be a transparent metal compound material or a semiconductor compound such as indium tin oxide, gallium nitride or the like.
  • the wires present on the substrate are formed by photolithography, and a printing method can also be employed.
  • the substrate is provided with a sensor member, which may be an optical sensor device, which may be a pressure sensor device.
  • the sensor device is connected to the wire, and can also be connected to the field effect tube of the micro active inorganic light emitting diode unit chip through a wire, or can be connected to the wire through a field effect tube included in the sensor device itself.
  • the substrate may be of a rigid material such as glass, a printed circuit board, and the substrate may also be of a flexible material such as polyimide.
  • the invention simultaneously manufactures the field effect transistor of the pixel driving circuit and the inorganic light emitting diode unit device, overcomes the above problems, and reduces the equipment cost of the display factory.
  • FIG. 1 to FIG. 6 show a manufacturing process of an arbitrary curved surface display device in which a unit display pixel is composed of a micro active inorganic light emitting diode unit chip.
  • Fig. 1 is a schematic view showing the structure of a micro active inorganic light emitting diode array.
  • Fig. 2 is a view showing the structure of a micro active inorganic light emitting diode array in which a substrate is peeled off.
  • FIG. 3 is a schematic diagram of a unit display pixel for transferring a micro active inorganic light emitting diode unit chip to a substrate of an arbitrary curved display device.
  • Fig. 4 is a cross-sectional view taken along line A-A' of Fig. 3;
  • FIG. 5 is a schematic view showing a unit display pixel in which another direction of the wire is reworked and the wires in each direction are connected to the micro active inorganic light emitting diode unit chip.
  • Fig. 6 is a cross-sectional view taken along line B-B' of Fig. 5;
  • FIG. 1 is a schematic view showing the structure of a micro active inorganic light emitting diode array fabricated on a substrate, comprising: a substrate 10 of a micro inorganic light emitting diode, an unintentionally doped layer 11 of a micro inorganic light emitting diode, and an electronic inorganic type of a micro inorganic light emitting diode.
  • the unintentionally doped layer 11 of the inorganic light emitting diode is also used as an active layer for driving the field effect transistor, and the electronic type inorganic transport layer 12 of the inorganic light emitting diode is also used as an ohmic contact layer for driving the field effect transistor.
  • Fig. 2 is a view showing the structure of a micro-inorganic light-emitting diode array in which a substrate is peeled off.
  • a chemical etching method is employed; for the sapphire substrate, a laser lift-off method is employed.
  • FIG. 3 is a schematic diagram of a unit display pixel for transferring a micro-inorganic light-emitting diode unit chip to an arbitrary curved display device substrate, including: an arbitrary curved surface display device substrate 30, a Ground line 31, a data line 32 of a switching FET, and a switching field effect.
  • the area represents the area of the miniature inorganic light emitting diode.
  • Fig. 4 is a cross-sectional view taken along line A-A' of Fig. 3;
  • FIG. 5 is a schematic view showing a unit display pixel in which another direction of the wire is fabricated and the wires in each direction are connected to the micro-inorganic light-emitting diode unit chip.
  • the process steps include: forming an insulating film, forming via holes, and fabricating wires.
  • the scan line 40 is connected to the gate of the switch FET
  • the Vdd line 41 is connected to the lead electrode 23 of the hole-type conductive electrode of the inorganic light-emitting diode
  • the wire 42 is connected to the data line 32 of the switch FET and the switch FET
  • the drain electrode 26 is connected to the ground line 31 and the source electrode 21 of the driving field effect transistor.
  • Fig. 6 is a cross-sectional view taken along line B-B' of Fig. 5;
  • the micro photodiode is also transferred to the surface of the arbitrary curved display device, and the signal of the micro photodiode is transmitted to the peripheral circuit through the wire; or
  • the wires are transmitted to the field effect transistors included in the micro inorganic light emitting diode unit chip, and then transferred to the micro inorganic light emitting diodes included in the micro inorganic light emitting diode unit chip or peripheral circuits.

Abstract

一种单元显示像素由微型有源无机发光二极管单元芯片组成的任意曲面显示器件，每个微型有源无机发光二极管单元芯片包括无机发光二极管单元器件和场效应管。任意曲面的衬底上存在导线，而且导线连接每个微型有源无机发光二极管单元芯片。

Description

一种显示器件结构 技术领域
本发明涉及一种显示器件结构，特别单元显示像素由微型无机发光二极管单元芯片组成的任意曲面显示器件。
背景技术
当前主流平板显示技术为液晶显示(Liquid Crystal Display，即LCD)和有机电致发光显示(Organic Light emitting diode，即OLED)。这两种技术都是在玻璃衬底上制作薄膜晶体管形成有源矩阵电路，再填充液晶形成液晶盒，或者沉积有机发光层形成有机发光器件。最近出现了一种新型的微型无机发光二极管显示技术(Micro-LED)，采用巨量转移技术把无机发光二极管单元芯片(μILED)转移到衬底上，通过导线形成无源矩阵(Passive Matrix)显示。但是无源矩阵显示周边电路复杂，而且难以实现高分辨率显示。
发明内容
本发明提出了一种可以实现任意曲面的有源矩阵无机发光二极管显示器件的器件结构。
根据本发明的一个方面，显示像素由微型有源无机发光二极管单元芯片组成，每个微型有源无机发光二极管单元芯片包括微型无机发光二极管、一个或者一个以上的场效应管。
根据本发明的一个方面，微型有源无机发光二极管单元芯片(μAMLED)包括的场效应管的有源层采用微型无机发光二极管的其中一层材料。
根据本发明的一个方面，微型有源无机发光二极管单元芯片包括的场效应管采用微型无机发光二极管的其中两层材料。
根据本发明的一个方面，衬底上存在导线，而且导线连接每个微型有源无机发光二极管单元芯片。
根据本发明的一个方面，衬底上存在的导线可以是金属材料构成，也可以是透明金属化合物材料或者半导体化合物组成，如氧化铟锡、氮化镓等。
根据本发明的一个方面，衬底上存在的导线采用光刻方法形成，也可以采用打印方法。
根据本发明的一个方面，衬底存在传感器件，所述传感器件可以是光学传感器件，可以是压力传感器件。传感器件连接到导线，也可以通过导线连接到微型有源无机发光二极管单元芯片的场效应管上，还可以通过传感器件本身包括的场效应管连接到导线上。
根据本发明的一个方面，衬底可以是刚性材料的，如玻璃、印刷电路板，衬底也可以是柔性材料的，如聚酰亚胺(polyimide)。
本发明的积极效果在于：
当前，有机电致发光平板显示器件采用的低温多晶硅技术难以实现大面积均匀性，而氧化物晶体管存在稳定性的问题。本发明将像素驱动电路的场效应管和无机发光二极管单元器件同时制作，克服了上述问题，降 低了显示屏工厂的设备成本。
附图说明
图1一图6表示单元显示像素由微型有源无机发光二极管单元芯片组成的任意曲面显示器件的制作流程。
图1表示微型有源无机发光二极管阵列的结构示意图。
图2表示剥离衬底的微型有源无机发光二极管阵列的结构示意图。
图3是将微型有源无机发光二极管单元芯片转移到任意曲面显示器件衬底的单元显示像素示意图。
图4是图3的A-A’剖面图。
图5表示再制作另一方向导线，并完成各方向导线与微型有源无机发光二极管单元芯片连接的单元显示像素示意图。
图6是图5的B-B’剖面图。
具体实施方式
下面结合附图描述本发明的具体实施方式。
实施例一
图1表示衬底上制作的微型有源无机发光二极管阵列的结构示意图，包括：微型无机发光二极管的衬底10、微型无机发光二极管的非故意掺杂层11、微型无机发光二极管的电子型无机传输层12、微型无机发光二极管的无机发光层13、微型无机发光二极管的空穴型无机传输层14、微型无机发光二极管的空穴型导电电极15、驱动场效应管的栅电极20、驱动场效应 管的源电极21、驱动场效应管的漏电极22、微型无机发光二极管的空穴型导电电极的引出电极23。
其中，无机发光二极管的非故意掺杂层11还作驱动场效应管的有源层，无机发光二极管的电子型无机传输层12还作驱动场效应管的欧姆接触层。
图2表示剥离衬底的微型无机发光二极管阵列的结构示意图。
其中，对于硅基衬底，采用化学腐蚀的方法；对于蓝宝石衬底，采用激光剥离的方法。
图3是将微型无机发光二极管单元芯片转移到任意曲面显示器件衬底的单元显示像素示意图，包括：任意曲面显示器件衬底30、Ground线31、开关场效应管的数据线32、开关场效应管的栅极24、开关场效应管的漏电极26、开关场效应管的源电极25，T1区域表示开关场效应管区域，C区域表示存储电容区域，T2区域表示驱动场效应管区域，LED区域表示微型无机发光二极管区域。
图4是图3的A-A’剖面图。
图5表示再制作另一方向导线，并完成各方向导线与微型无机发光二极管单元芯片连接的单元显示像素示意图。工艺步骤包括：制作绝缘膜，形成过孔，制作导线。其中，扫描线40连接到开关场效应管的栅极，Vdd线41连接到无机发光二极管的空穴型导电电极的引出电极23，导线42连接开关场效应管的数据线32和开关场效应管的漏电极26，导线43连接Ground线31和驱动场效应管的源电极21。
图6是图5的B-B’剖面图。
实施例二
在将微型无机发光二极管单元芯片转移到任意曲面显示器件衬底的步骤中，也将微型光电二极管转移到任意曲面显示器件衬底，并将微型光电二极管的信号通过导线传输到外围电路；或者通过导线传输到微型无机发光二极管单元芯片包括的场效应管上，再传输到微型无机发光二极管单元芯片包括的微型无机发光二极管上或者外围电路。
以上针对本发明的优选实施方式进行了描述，本领域技术人员应该理解，在不脱离本发明的精神和权利要求书的范围基础上可以进行各种变化和修改。

Claims (8)

  1. 一种任意曲面显示器件，包括衬底和位于衬底上的显示像素，其特征在于：显示像素由微型有源无机发光二极管单元芯片组成，每个微型有源无机发光二极管单元芯片包括微型无机发光二极管、一个或者一个以上的场效应管。
  2. 根据权利要求1所述的任意曲面显示器件，其特征在于：所述每个微型有源无机发光二极管单元芯片包括一个或者一个以上的电容。
  3. 根据权利要求1、2所述的任意曲面显示器件，其特征在于：所述场效应管的一层或者一层以上的材料采用与微型无机发光二极管其中一层或者一层以上相同的材料。
  4. 根据权利要求1-3所述的任意曲面显示器件，其特征在于：所述衬底上存在导线，而且导线连接每个微型有源无机发光二极管单元芯片。
  5. 根据权利要求1-4所述的任意曲面显示器件，其特征在于：所述衬底存在传感器件，而且传感器件连接所述导线。
  6. 根据权利要求1-5所述的任意曲面显示器件，其特征在于：所述传感器件通过导线连接到所述微型有源无机发光二极管单元芯片的场效应管。
  7. 根据权利要求1-6所述的任意曲面显示器件，其特征在于：所述任意曲面衬底为刚性衬底。
  8. 根据权利要求1-7所述的任意曲面显示器件，其特征在于：所述任意曲面衬底为柔性衬底。
PCT/CN2018/000005 2018-01-02 2018-01-02 一种显示器件结构 WO2019134057A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/CN2018/000005 WO2019134057A1 (zh) 2018-01-02 2018-01-02 一种显示器件结构
US16/772,801 US11348968B2 (en) 2018-01-02 2018-01-02 Display device structure
CN201880005881.2A CN110226229A (zh) 2018-01-02 2018-01-02 一种显示器件结构

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/000005 WO2019134057A1 (zh) 2018-01-02 2018-01-02 一种显示器件结构

Publications (1)

Publication Number Publication Date
WO2019134057A1 true WO2019134057A1 (zh) 2019-07-11

Family

ID=67143516

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/000005 WO2019134057A1 (zh) 2018-01-02 2018-01-02 一种显示器件结构

Country Status (3)

Country Link
US (1) US11348968B2 (zh)
CN (1) CN110226229A (zh)
WO (1) WO2019134057A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110649060A (zh) * 2019-11-01 2020-01-03 京东方科技集团股份有限公司 微发光二极管芯片及制作方法、显示面板制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102396067A (zh) * 2009-04-15 2012-03-28 全球Oled科技有限责任公司 具有多边形小芯片的显示装置
CN103995361A (zh) * 2014-06-17 2014-08-20 上海新视觉立体显示科技有限公司 裸眼3d显示像素单元及多视图裸眼3d图像显示设备
CN105242444A (zh) * 2015-09-18 2016-01-13 友达光电股份有限公司 显示面板
CN106611764A (zh) * 2015-10-27 2017-05-03 群创光电股份有限公司 显示设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4085459B2 (ja) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 ３次元デバイスの製造方法
CN101660206B (zh) * 2009-09-10 2012-07-11 厦门市三安光电科技有限公司 一种完整性GaN基薄膜的制备方法
CN101847646B (zh) * 2010-02-02 2012-05-30 孙润光 一种无机发光二极管显示装置
US9548332B2 (en) * 2012-04-27 2017-01-17 Apple Inc. Method of forming a micro LED device with self-aligned metallization stack
CN103855179A (zh) * 2012-12-03 2014-06-11 孙润光 一种无机发光二极管显示器件结构
US9252375B2 (en) * 2013-03-15 2016-02-02 LuxVue Technology Corporation Method of fabricating a light emitting diode display with integrated defect detection test
CN113013150B (zh) * 2014-06-18 2022-04-19 艾克斯展示公司技术有限公司 微组装led显示器
KR102385327B1 (ko) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
US10304813B2 (en) * 2015-11-05 2019-05-28 Innolux Corporation Display device having a plurality of bank structures
FR3044467B1 (fr) * 2015-11-26 2018-08-10 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dalle lumineuse et procede de fabrication d'une telle dalle lumineuse
US10091446B2 (en) * 2015-12-23 2018-10-02 X-Celeprint Limited Active-matrix displays with common pixel control
US10132478B2 (en) * 2016-03-06 2018-11-20 Svv Technology Innovations, Inc. Flexible solid-state illumination devices
US10593657B2 (en) * 2016-11-01 2020-03-17 Innolux Corporation Display devices and methods for forming the same
US10325893B2 (en) * 2016-12-13 2019-06-18 Hong Kong Beida Jade Bird Display Limited Mass transfer of micro structures using adhesives
KR102612998B1 (ko) * 2016-12-30 2023-12-11 엘지디스플레이 주식회사 표시 장치 및 이를 이용한 멀티 스크린 표시 장치
CN106782128A (zh) * 2017-01-24 2017-05-31 深圳市华星光电技术有限公司 微发光二极管显示面板及其制造方法
US10312228B2 (en) * 2017-01-25 2019-06-04 Innolux Corporation Display device
KR102060471B1 (ko) * 2017-02-01 2019-12-30 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조 방법
US20190044023A1 (en) * 2017-08-01 2019-02-07 Innolux Corporation Methods for manufacturing semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102396067A (zh) * 2009-04-15 2012-03-28 全球Oled科技有限责任公司 具有多边形小芯片的显示装置
CN103995361A (zh) * 2014-06-17 2014-08-20 上海新视觉立体显示科技有限公司 裸眼3d显示像素单元及多视图裸眼3d图像显示设备
CN105242444A (zh) * 2015-09-18 2016-01-13 友达光电股份有限公司 显示面板
CN106611764A (zh) * 2015-10-27 2017-05-03 群创光电股份有限公司 显示设备

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110649060A (zh) * 2019-11-01 2020-01-03 京东方科技集团股份有限公司 微发光二极管芯片及制作方法、显示面板制作方法
CN110649060B (zh) * 2019-11-01 2022-04-26 京东方科技集团股份有限公司 微发光二极管芯片及制作方法、显示面板制作方法

Also Published As

Publication number Publication date
US11348968B2 (en) 2022-05-31
US20210167120A1 (en) 2021-06-03
CN110226229A (zh) 2019-09-10

Similar Documents

Publication Publication Date Title
US11800783B2 (en) Array substrate, stretchable display device, and method for manufacturing array substrate
US10424569B2 (en) Micro light-emitting-diode display panel and manufacturing method thereof
JP6838247B2 (ja) マイクロ発光ダイオードディスプレイパネル及びその製造方法
US9881984B2 (en) Organic electro-luminescent display device
US20180012948A1 (en) Array substrate structure and display device
US8044426B2 (en) Light emitting device capable of removing height difference between contact region and pixel region and method for fabricating the same
KR20190096256A (ko) 전사부재 및 선택적 전사 기술을 이용한 액티브 매트릭스 rgb 수직형 마이크로led 디스플레이
US20180190824A1 (en) Thin film transistor, method of manufacturing the same, and organic light emitting display device including the same
KR20180004488A (ko) 유기 발광 표시 장치 및 그 제조 방법
US20150230337A1 (en) Display device and method of manufacturing the same
TWI748166B (zh) 電子裝置及其製造方法
WO2018107788A1 (zh) 显示装置和过孔电连接结构
WO2017024658A1 (zh) 有机发光显示器及其制造方法
KR102205588B1 (ko) 표시장치
US11908870B2 (en) Thin film transistor array substrate having metal layer bridging structure and display panel including the same
JP4409482B2 (ja) 平板表示パネル及びこれを備える平板表示装置
US20220302340A1 (en) Micro light emitting diode panel
JP2004233444A (ja) アクティブマトリクス型表示装置および薄膜トランジスタ型表示装置
TWI783602B (zh) 微型發光二極體面板及其製造方法
WO2018023955A1 (zh) Oled显示装置的阵列基板及其制造方法
WO2019134057A1 (zh) 一种显示器件结构
KR20080062308A (ko) 유기 전계발광소자 및 그 제조방법
KR100626087B1 (ko) 유기 발광 표시 장치
CN110660824A (zh) 电子装置及其制造方法
CN104538433A (zh) 有源矩阵有机发光显示器基板及其制造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18897962

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18897962

Country of ref document: EP

Kind code of ref document: A1