TW201717552A - 具有電磁通訊之積體電路 - Google Patents

具有電磁通訊之積體電路 Download PDF

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Publication number
TW201717552A
TW201717552A TW105139861A TW105139861A TW201717552A TW 201717552 A TW201717552 A TW 201717552A TW 105139861 A TW105139861 A TW 105139861A TW 105139861 A TW105139861 A TW 105139861A TW 201717552 A TW201717552 A TW 201717552A
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Taiwan
Prior art keywords
signal
converter
package
hole wall
ground plane
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TW105139861A
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English (en)
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TWI631834B (zh
Inventor
依恩Ａ 凱爾斯
蓋瑞Ｄ 麥可科美克
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奇沙公司
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Publication of TW201717552A publication Critical patent/TW201717552A/zh
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Publication of TWI631834B publication Critical patent/TWI631834B/zh

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    • H—ELECTRICITY
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    • H01Q—ANTENNAS, i.e. RADIO AERIALS
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    • H01Q19/021—Means for reducing undesirable effects
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Abstract

一種用於發射或接收信號之系統可以包括：一積體電路(IC)；一轉換器，其操作地耦接至該積體電路，用於在電氣信號與電磁信號之間轉換；以及一種絕緣材料，其將該轉換器與該積體電路彼此間隔且固定位置。該系統更包括一導線框，以提供至該積體電路上導體之外部連接。一電磁能量導引組件，其相對於該轉換器安裝，用於將電磁能量導入於包括該轉換器之區域中，且於離開該積體電路之方向中。該電磁能量導引組件可以包括：該導線框、一印刷電路板接地平面、或與該轉換器間隔之外部導電元件。在一接收器中，一信號偵測器電路可以響應於一代表所接收第一射頻電氣信號之監視信號，以產生一控制信號，將該接收器之輸出致能或禁能。

Description

具有電磁通訊之積體電路
本發明有關於一種用於通訊之積體電路(IC)系統與方法，例如封裝其具有嵌設於IC中像是天線之電磁(EM)轉換器。此積體電路可以包括：信號偵測器電路及/或電磁能量導引組件。
半導體製造與電路設計技術之進展，使得能夠製造與發展出積體電路(IC)，其具有越來越高之操作頻率。因此，包括此種積體電路之電子產品與系統可以提供較先前世代產品更大功能。此額外功能通常包括：以越來越快之速率處理越來越大數量資料。
許多電子系統包括多個印刷電路板(PCB)，在其上安裝此等高速積體電路(IC)，經由此等印刷電路板可以將各種信號傳送來/去此積體電路。在具有至少兩個PCB之電子系統中，需要在此等PCB之間傳送資訊，所以發展出各種連接器與背板結構，以方便在此等PCB之間資訊流動。不幸的是，此種連接器與背板結構會將各種阻抗不連續導入信號通路中，造成信號品質或完整度之退化。以傳統方式連接印刷電路板，例如以承載信號之機械連接器，通常會造成不連續，須要昂貴電子裝置以克服。傳統機械連接器亦會隨時間而磨損，須要準確校準與製造方法，且容易受到機械推擠。
傳統連接器之此等特徵會導致：信號完整度之退化、以及此須要以非常高速傳送資料電子系統之不穩定，此再限制此等產品之使用。
在一例中，此種用於發射或接收信號之系統可以包括：一轉換器，其被組態，在電氣信號與電磁信號之間轉換；一積體電路，其操作地耦接至此轉換器；以及一種絕緣材料。此積體電路可以包括發射器電路及/或接收器電路。一變壓器電路可以將基帶信號轉換成射頻信號，且將此射頻電氣信號傳送至轉換器，作為電磁信號傳送。一接收器電路可以由轉換器接收電磁信號，且將此電磁信號轉換成基帶信號。此積體電路與轉換器可以至少部份地嵌設於絕緣材料中，且對彼此保持固定位置。
在另一例中，此種用於發射或接收信號之系統可以包括：一轉換器，其被組態，在射頻電氣信號與射頻電磁信號之間轉換；一積體電路，其操作地耦接至此轉換器；以及一電磁能量導引組件，其相對於此轉換器而安裝。此積體電路可以包括發射器電路及/或接收器電路。一發射器電路可以將基帶信號轉換成射頻電氣信號，且將此射頻電氣信號傳送至轉換器。一接收器電路可以由轉換器接收射頻電氣信號，且將此射頻電氣信號轉換成基帶信號。一電磁能量導引組件可以將電磁能量導引於一包含轉換器之區域中，且導引於離開IC之方向中。
在還有另一例中，此系統可以包括：一轉換器，其被組態將電磁信號轉換成電氣信號；一積體電路，其操作地耦接至此轉換器。此積體電路可以包括一接收器電路與一信號偵測器電路。當此控制信號具有第一狀態且當此控制信號並不具有與第一狀態不同之第二狀態時，此接收器 電路可以由轉換器接收射頻電氣信號，且將此射頻電氣信號轉換成基帶信號。當此監視信號顯示所接收之第一射頻電氣信號為可接收信號且具有第二狀態時、當此監視信號顯示所接收之第一射頻電氣信號為不可接收信號時，信號偵測器電路可以響應於此代表所接收第一射頻電氣信號之監視信號，以產生具有第一狀態之控制信號。
一典範方法可以包括：由一轉換器接收一射頻電磁信號，且此轉換器將第一射頻電磁信號轉換成第一射頻電氣信號。積體電路(IC)之接收器電路可以接收此第一射頻電氣信號。可以產生監視信號，其代表所接收之射頻電氣信號。信號偵測器電路可以監視此監視信號，且判斷此監視信號是否顯示所接收之射頻電氣信號為可接收信號。
當此監視信號顯示所接收之射頻電氣信號為可接收信號且具有與第一狀態不同之第二狀態、當此監視信號顯示所接收之射頻電氣信號為不可接收信號時，可以產生具有第一狀態之控制信號。當此控制信號具有第一狀態時，此接收器電路可以由射頻電氣信號產生且輸出一基帶信號；以及當此控制信號具有第二狀態時，並不將射頻電氣信號轉換成基帶信號。
10‧‧‧IC封裝
12‧‧‧晶粒
14‧‧‧轉換器
16‧‧‧導電連接器
18‧‧‧接線
20‧‧‧接線
22‧‧‧接合墊
24‧‧‧接合墊
26‧‧‧封包材料
28‧‧‧阻抗變壓器
30‧‧‧折疊式雙極或迴路天線
32‧‧‧接地平面
34‧‧‧封裝介電基板
36‧‧‧金屬化圖案
38‧‧‧外部導體
40‧‧‧覆晶焊球或突塊
42‧‧‧球墊
44‧‧‧通孔
46‧‧‧突塊
50‧‧‧IC封裝
52‧‧‧晶粒
54‧‧‧天線
56‧‧‧接線
58‧‧‧接線
60‧‧‧接合墊
62‧‧‧接合墊
64‧‧‧阻抗變壓器
70‧‧‧IC封裝
72‧‧‧晶粒
74‧‧‧折疊式雙極天線
76‧‧‧阻抗變壓器
78‧‧‧封包材料
80‧‧‧封裝介電基板
82‧‧‧金屬化圖案
84‧‧‧接地平面
86‧‧‧封裝突塊
88‧‧‧通孔
90‧‧‧球墊
92‧‧‧覆晶突塊
94‧‧‧突塊
100‧‧‧IC封裝
102‧‧‧晶粒
104‧‧‧折疊式雙極天線
106‧‧‧封包材料
108‧‧‧封包介電基板
110‧‧‧金屬化圖案
112‧‧‧接地平面
114‧‧‧封裝突塊
116‧‧‧通孔
118‧‧‧球墊
120‧‧‧覆晶突塊
128‧‧‧通訊裝置
130‧‧‧IC封裝
130’‧‧‧第一IC封裝
130”‧‧‧第二IC封裝
130A’‧‧‧天線端
132‧‧‧印刷電路板
132’‧‧‧第一印刷電路板
132”‧‧‧第二印刷電路板
134‧‧‧晶粒
136‧‧‧天線
138‧‧‧接線
140‧‧‧封裝基板
142‧‧‧封包材料
144‧‧‧頂部介電層
146‧‧‧主面或表面
148‧‧‧反覆安裝突塊
150‧‧‧接地平面層
150’‧‧‧接地平面
150A’‧‧‧前緣
160‧‧‧發射器
162‧‧‧發射器介面電路
164‧‧‧天線
166‧‧‧變壓器
168‧‧‧調變器
170‧‧‧放大器
172‧‧‧端子
174‧‧‧端子
176‧‧‧端子
178‧‧‧端子
180‧‧‧接收器
182‧‧‧接收器介面電路
184‧‧‧天線
186‧‧‧第一變壓器
188‧‧‧放大器級
190‧‧‧第二變壓器
192‧‧‧第二放大器級
194‧‧‧第三變壓器
196‧‧‧端子
198‧‧‧端子
200‧‧‧端子
202‧‧‧端子
204‧‧‧端子
206‧‧‧解調變器
208‧‧‧輸出比較器
210‧‧‧端子
212‧‧‧低通濾波器
214‧‧‧第二比較器
216‧‧‧端子
218‧‧‧AND閘
219‧‧‧自動增益控制(AGC)電路
220‧‧‧第三比較器
222‧‧‧端子
230‧‧‧通訊裝置
232‧‧‧IC封裝
234‧‧‧外部電路導體
236‧‧‧外部電路導體
238‧‧‧晶粒
240‧‧‧導線框
242‧‧‧導電連接器
244‧‧‧天線
246‧‧‧封包材料
248‧‧‧電性導體
250‧‧‧導線框基板
252‧‧‧電鍍導線
254‧‧‧通孔
256‧‧‧反覆安裝突塊
258‧‧‧條導體
260‧‧‧通孔
262‧‧‧通孔
264‧‧‧通孔
266‧‧‧輻射成形器
270‧‧‧特徵輻射圖案
280‧‧‧輻射
282‧‧‧輻射
290‧‧‧通訊裝置
292‧‧‧IC封裝
292A‧‧‧IC封裝終端
294‧‧‧印刷電路板
296‧‧‧封裝安裝突塊
298‧‧‧晶粒
300‧‧‧天線
302‧‧‧陣列
304‧‧‧導向結構
306‧‧‧導向結構
308‧‧‧輻射
310‧‧‧輻射
312‧‧‧輻射
314‧‧‧複合延長輻射圖案
圖1顯示包括晶粒與天線之積體電路(IC)封裝之第一例之簡化概要頂視圖；圖2為沿著圖1之線2-2之IC封裝之橫截面圖；圖3為圖1與圖2之晶粒與天線相連接之放大圖； 圖4顯示包括晶粒與天線之積體電路(IC)封裝之第二例之概要頂視圖；圖5顯示包括晶粒與天線之積體電路(IC)封裝之第三例之概要頂視圖；圖6為沿著圖5之線6-6之IC封裝之橫截面圖；圖7為IC封裝之另一實施例；圖8顯示包括IC封裝與PCB典範通訊裝置之概要側視圖；圖9為典範發射器電路與天線之一部份之簡化電路圖；圖10為典範接收器電路與天線之一部份之電路圖；圖11顯示此包括IC封裝其具有外部電路導體之另一典範通訊裝置之等距圖；圖12顯示圖11之典範通訊裝置之底視圖；圖13與14說明被組態作為發射器之圖11之通訊裝置所產生代表輻射圖案；圖15與16顯示具有PCB接地平面之兩個不同典範組態之發射裝置、與所產生輻射圖案之典型代表；圖17顯示具有間隔外部導引結構之典範發射裝置之概要頂視圖；以及圖18顯示圖17之發射裝置之概要側視圖，以顯示典型代表輻射圖案。
可以使用無線通訊，以提供在裝置上組件之間訊號通訊，或提供在裝置間之通訊。此無線通訊提供一介面，其不會受到機械與電性退化。此在晶片之間使用無線通訊之系統之例揭示於美國專利案號US 5,621,913與美國專利公開案號2010/0159829，其所揭示內容在此整個併入作為用於所有目的之參考。
在一例中，可以設置此緊密耦合發射器/接收器對(pair)，將發射器設置在第一傳送通路之終端部份，且將接收器設置在第二傳送通路之終端部份。取決於所發射能量之強度，可以將發射器與接收器設置得彼此靠近，以及此第一傳送通路與第二傳送通路可以彼此不相鄰接。在一典範形式中，發射器與接收器可以設置在分離之電路載體上，將發射器/接收器對之天線設置得靠近。
如同以下所討論，可以將發射器或接收器組態為IC封裝，其中天線可以靠近晶粒，且藉由介電或絕緣封包或接合材料而保持定位。可以將發射器或接收器組態為IC封裝，其中可以將天線設置靠近晶粒，且藉由封裝之封包材料及/或導線框基板而保持定位。於圖中顯示且在以下說明，此嵌入於IC封裝中EHF天線之例。
圖1至3顯示典範IC封裝，其通常以10表示。IC封裝10可以包括：晶粒12；轉換器14，其提供電性信號與電磁(EM)信號間之轉換；以及一導體16，例如接線18、20，其將轉換器電性連接至接合墊22與24，以連接至包括於晶粒12中之發射器或接收器電路。IC封裝10可以更包括一封包材料26，其形成於晶粒及/或轉換器至少一部份之周圍。在此例中封包材料26覆蓋晶粒12、導電連接器16、以及轉換器14，且以虛線顯示，以致於晶粒與轉換器之細節可以實線說明。
晶粒12可以包括任何適當結構，其被組態作為在適當晶粒基板上之微形電路，且其功能等同於亦被稱為“晶片”或“積體電路”(IC)之組件。晶粒基板可以為任何適當半導體材料。例如，晶粒基板可以由矽製成。晶粒12可以與其他電性導體16一起安裝，其例如為導線框而於圖1 至3中並未顯示，以提供至外部電路之連接。此以虛線所顯示阻抗變壓器28可以提供在晶粒12上電路與轉換器14間之阻抗匹配。
此轉換器14可以為折疊式雙極或迴路天線30之形式，可以被組態在無線電頻率例如EHF頻譜中操作，且可以被組態以發射及/或接收電磁信號。天線30可以藉由任何適當導體16與晶粒12分開但操作上連接，且可以位於靠近晶粒12。
天線30之尺寸可以適合在電磁頻譜之EHF頻帶中操作。在一例中，天線30迴路組態可以包括0.1mm之材料帶，設置在1.4mm長且0.53mm寬之迴路中，而在此迴路之口具有0.1mm之間隙，且此迴路邊緣至晶粒12之邊緣大約0.2mm。
可以使用封包材料26以協助將IC封裝10之各種組件保持在固定相對位置。封包材料26可以為任何適當材料，其被組態對於IC封裝10之電性與電子組件提供電性絕緣與實體保護。例如，封包材料26亦稱為絕緣材料，可以為模製複合物、玻璃、塑膠、或陶瓷。封包材料26可以形成任何適當形狀。例如，封包材料26可以為矩形塊形狀，其將IC封裝10之所有組件封包，除了導體16之未連接終端之外，而將晶粒連接至外部電路。可以其他電路或組件形成外部連接。
圖3顯示轉換器14之典範組態，其藉由接線18與20、接合墊22與24連接至晶粒12。可以將接線與接合墊組態，以限制在轉換器14與晶粒12之電路間之阻抗不匹配。在一典範實施例中，接線18與20可以為0.6mm長，而具有一般測量(顯示為尺寸“L”)大約0.3mm。接合墊可以為大約0.066mm2。亦可以將接線以此種方式設置，以致於其在裝附於各 接合墊(顯示為尺寸“B”)之點之分開距離為大約0.074mm，以及其在裝附於各天線20(顯示為尺寸“S”)之點之分開距離為大約0.2mm。可以藉由使用在圖1中所顯示變壓器28進一步達成阻抗匹配。
如同於圖2中顯示，IC封裝10可以更包括：一接地平面32，其安裝至晶粒12之下表面；以及封裝介電基板34，其類似於使用於PCB之介電質。接地平面32可以為任何適當結構，其被組態以提供用於晶粒12之電性接地。例如，封裝接地平面32可以為導電、矩形、平坦結構，其直接安裝至基板34上之晶粒12下。基板34可以為兩側金屬化圖案，例如在頂表面上之金屬化圖案36，其包括：天線30、接地平面32、以及導體，其藉由一組適當導體16連接至晶粒12，此組導體例如由導線框或覆晶突塊所提供，如同以下進一步討論。封裝10可以進一步包括外部導體38，其將封裝連接至外部電路，其例如為覆晶焊球或突塊40所代表。突塊40可以藉由球墊42與例如通孔44之通孔連接至金屬化圖案36中之導體，將突塊46連接至接地平面32。
圖4至圖6顯示IC封裝之其他組態。圖4顯示IC封裝50，其類似於IC封裝10，具有晶粒52；天線54；接線56、58；接合墊60、62；阻抗變壓器64；封包材料66。然而，在此例中，天線54為雙極天線。
圖5與圖6說明IC封裝70，其亦類似於IC封裝10，具有晶粒72；折疊式雙極天線74；阻抗變壓器76；封包材料78；封裝介電基板80；金屬化圖案36，其包括天線74與接地平面84；封裝突塊86；通孔88；以及球墊90。封包材料78覆蓋晶粒72與天線74。然而，在此例中，晶粒12藉由覆晶突塊92以覆晶組態安裝於金屬化圖案82上。特別是，覆晶突 塊例如突塊94將從天線74延伸之導體，連接至晶粒72底側上相對應導體端子，而無須使用接線。
圖7顯示IC封裝100之另一替代實施例，其類似於IC封裝70，具有：一晶粒102；一折疊式雙極天線104；封包材料106；封裝介電基板108；金屬化圖案110，其包括天線104與接地平面112；封裝突塊114；通孔116；以及球墊118；以及覆晶突塊120。覆晶突塊120包括覆晶突塊112，將從天線104延伸之導體，連接至晶粒102底側上相對應導體端子，此晶粒102為安裝至基板108之覆晶，在此例中，封包材料106主要使用作為晶粒102與基板108間之填料。
由以上說明可以瞭解，此用於發射或接收信號之系統包括：一轉換器，其被組態在電氣信號與電磁信號之間轉換；一積體電路(IC)，其操作地耦接至此轉換器，此IC包含至少一發射器電路，其將基帶信號轉換至射頻信號，且將此射頻電氣信號傳送至此轉換器，用於作為電磁信號傳送，以及一接收器電路，其由轉換器接收電磁信號，且將其轉換成基帶信號；以及絕緣材料，在其中至少部份地嵌設IC與轉換器，此絕緣材料將轉換器與IC維持在彼此間隔的固定位置。
此種系統可以更包括一介電基板，以支持此轉換器、IC、以及絕緣材料。此絕緣材料可以完全覆蓋轉換器。
圖8顯示通訊裝置128之代表側視圖，其包括IC封裝130，以覆晶方式安裝至典範印刷電路板(PCB)132。在此例中可以看出，此IC封裝130包括：晶粒134；天線136；接線其包含接線138，其將晶粒連接至天線。此晶粒、天線、以及接線安裝於封裝基板140上，且封包於封包材料 142中。PCB 132可以包括一頂部介電層144，其具有一主面或表面146。IC封裝130是以反覆安裝突塊148，以反覆方式安裝至表面146，以裝附至金屬化圖案(未圖示)。
PCB 132可以更包括一層150，其與由導電材料所製表面146間隔，以形成一接地平面。此PCB接地平面可以為任何適當結構，其被組態以提供電性接地至在PCB 132上之電路與組件。接地平面層150，其設置在天線136之下而間隔一距離D，取決於IC封裝與PCB之組態與尺寸，此距離D可以小於所設計頻率之波長。例如，PCB接地平面150可以位於PCB 132之安裝表面146之下大約0.4mm，以及天線136可以安裝於安裝表面146上大約0.25mm之平面中，造成在天線之平面與接地平面之平面間0.65mm之距離D，其在30與300GHz間EHF頻帶中操作，其波長是在1cm與1mm之間。
圖9顯示發射器160之典範簡化電路圖，其包括：一發射器介面電路162、與耦接至此發射器介面電路之天線164。此發射器介面電路可以位於晶粒上，例如在圖1-3中所顯示在晶粒12上，且可以包括一變壓器166、一調變器168、以及一放大器170。在此例中，變壓器168耦接至天線164，且接收在主要線圈上來自端子172之功率。當與功率放大器組合時，此變壓器可以提供共振放大，且可以提供直流(DC)阻擋與阻抗轉換。調變器168可以為任何適當調變器，且作為在由一串聯組態MOSFET所形成之鉗夾(pinch)裝置，其接收在端子174上之輸入信號，以調變由放大器170所傳送之載體信號。在此例中放大器170包括：互補式共同源極MOSFET，其由施加至端子176與178之信號驅動，其具有由電壓控制振盪器所產生選擇 載體頻率。
圖10顯示接收器180之簡化電路圖，其包括接收器介面電路182與天線184。此接收器介面電路182可以包括於晶粒中之積體電路中，例如在圖1-3中所說明之晶粒12中。此所接收調變射頻(RF)信號、例如在EHF帶中之信號，是經由變壓器與變壓器所耦接低雜訊放大器之串聯而傳送，其包括：一第一變壓器186、放大器級188、第二變壓器190、第二放大器級192、以及第三變壓器194。變壓器186、190、以及194可以接收在各端子196、198、以及200上之DC偏壓。可以將放大器功率施加至在變壓器190與194之有關主要線圈之各端子202與204上。
此經放大與調整之RF信號輸入至解調變器206，其將所接收調變RF信號轉換成基帶信號。可以將由解調變器206所輸出信號饋入一輸出比較器208。比較器208亦由端子210接收輸入/輸出臨界位準參考信號。在此例中，基帶信號為二進位信號。如果此解調變基帶信號是在此臨界值以上，則此比較器208之輸出為邏輯1。如果此解調變基帶信號是在此臨界值以下，則此比較器208之輸出為邏輯0。
一或更多個比較器亦可將此監視信號之平均位準與預定最小臨界位準比較，以判斷此所接收信號是否足夠強而被認為有效。此可能須要將接收天線足夠地靠近發射天線，以傳送足夠強之信號。如果發射天線與接收天線是在所想要實體通訊範圍例如5mm至10mm內，則可以設定此預定最小臨界位準，以確保此來自發射器之電磁信號被認為有效，且因此由接收器處理。
更特定而言，此由解調變器206所輸出解調變基帶信號，可 以與在端子210上所提供輸入輸出參考組合，而輸入於低通濾波器212中。此濾波器之輸出為監視信號，其代表所接收解調變基帶信號之平均強度，其再代表所接收RF信號之平均強度。將此平均強度監視信號與在端子216上所接收信號-偵測臨界參考信號一起輸入至第二比較器214。比較器214監視此由濾波器212輸出之監視信號，且判斷此所接收信號是否足夠強。
此來自比較器214之輸出為一信號偵測器控制信號，其可以具有兩種狀態之一。在第一狀態中，此控制信號顯示所接收信號具有足夠強度，而被認為是有效信號。在第二狀態中，此控制信號顯示所接收信號並不具有足夠強度。將此來自比較器214之控制信號與來自比較器208之經解調變基帶信號輸入至AND閘218中。當此控制信號是在第一狀態中時，此AND閘輸出基帶信號，以顯示接收到足夠強的信號。如果此控制信號是在第二狀態中，將AND閘禁能，且並未由接收器介面電路182輸出基帶信號。亦可將此由比較器214所輸出之信號-偵測信號輸出至在晶粒或PCB上之其他電路。在晶粒或PCB上安裝IC，用於其他合適用途。
接收器介面電路182亦可以具有自動增益控制(AGC)電路219。此AGC電路129可以包括一第三比較器220，其亦接收來自濾波器212之輸出，作為代表接收信號平均強度之信號。比較器接收在端子222上之AGC目標位準信號作為參考信號。比較器然後產生輸出AGC信號，以回饋至放大器級188與192，以控制此等放大器之增益。此AGC電路以所想要位準，將所接收信號保持足夠強，而由接收器介面電路輸出。可以看出此輸入至信號偵測比較器214之基帶信號為一所接收經調整信號，其位準由放大級188與192修正，以響應於AGC控制信號。如果此監視信號不夠強， 則即使以自動增益控制，此AND閘218會被禁能，且不會輸出基帶信號。
由以上說明可知，在一些例中為明顯，此系統可以包括：一第一轉換器，其被組態將電磁信號轉換成電氣信號；一第一積體電路，其操作地耦接至此轉換器。此積體電路包括：一接收器電路，用於從轉換器接收第一射頻電氣信號，以及當此控制信號具有第一狀態且當不具有與第一狀態所不同之第二狀態時，將此第一射頻電氣信號轉換成第一基帶信號，且輸出此第一基帶信號；以及一信號偵測器電路，其在當此監視信號顯示所接收第一射頻電氣信號為可接受信號且具有第二狀態、當此監視信號顯示所接收第一射頻電氣信號不為可接受信號時，響應於代表所接收第一射頻電氣信號之監視信號，以產生具有第一狀態之控制信號。
此信號偵測器電路可以包括比較器，用於將監視信號之特徵與參考值比較。此比較器產生一輸出信號，以顯示此監視信號之特徵如何與參考值比較。此信號偵測器電路產生控制信號，以響應此輸出信號。此監視信號之特徵代表此所接收第一射頻電氣信號之強度，且此參考值代表臨界信號強度，在此之下將接收禁能，以及在此之上將接收致能。此監視信號之特徵代表平均信號強度。
在一些例中，此系統可以更包括第二轉換器，其被組態將電氣信號轉換成電磁信號，此第二轉換器設置得足夠靠近第一轉換器，而由第一轉換器接收由第二轉換器所產生之電磁信號；以及一第二積體電路，其操作地耦接至第二轉換器，此第二積體電路包括一發射器電路，用於接收一第二基帶信號，且將此第二基帶信號轉換成第二射頻電氣信號，且將此第二射頻電氣信號傳送至第二轉換器。
在一些例中，一種方法包括：由第一轉換器接收一第一射頻電磁信號；由第一轉換器將第一射頻電磁信號轉換成第一射頻電氣信號；由積體電路(IC)之接收器電路從此轉換器接收此第一射頻電氣信號；產生一監視信號，其代表所接收之第一射頻電氣信號；由一信號偵測器電路監視此監視信號；判斷是否此監視信號顯示此所接收第一射頻電氣信號為一可接收信號；當此監視信號顯示所接收之第一射頻電氣信號為可接收信號且具有與第一狀態不同之第二狀態時、當此監視信號顯示所接收之第一射頻電氣信號不為可接收信號時，產生一控制信號其具有第一狀態；當此控制信號其具有第一狀態時，由此接收器電路將第一射頻電氣信號轉換成第一基帶信號；以及當此控制信號其具有第二狀態時，此接收器電路並不將此第一射頻電氣信號轉換成第一基帶信號。
判斷此監視信號是否顯示此所接收第一射頻電氣信號為一可接收信號包括：將監視信號之特徵與參考值比較；產生一輸出信號以顯示如何將監視信號之特徵與參考值比較；以及產生此控制信號包括，產生此控制信號以響應輸出信號。此監視信號之特徵可以代表所接收第一射頻電氣信號之強度，且此參考值可以代表臨界信號強度，在此之下將接收禁能，且在此之上將接收致能。此監視信號之特徵代表平均信號強度。
在一些例中，此種方法可以更包括：由一包含發射器電路之第二IC接收一第二基帶信號；將此第二基帶信號轉換成第二射頻電氣信號；將此第二射頻電氣信號傳送至第二轉換器；將此第二轉換器設置得足夠靠近第一轉換器，而由第一轉換器接收由第二轉換器所產生之電磁信號；以及由此第二轉換器將第二射頻電氣信號轉換成第一射頻電磁信號。
圖11與12說明另一典範通訊裝置230，其包括一IC封裝232而具有外部電路導體234與236。在此例中，此IC封裝232可以包括：一晶粒238、一導線框240、以接線形式之導電連接器242、一天線244、封包材料246、以及其他未顯示之組件以簡化說明。可以將此晶粒236安裝成與導線框240電性連通，其可為電性導體248之任何適當配置，其被組態以允許一或更多個其他電路與晶粒238操作地連接。可以建構天線244作為產生導線框240之製造過程之一部份。
導線248可以嵌設或固定於導線框基板250中，其在圖2中以虛線顯示，而對應於封裝基板34。此導線框基板可以由任何適當絕緣材料製成，其被組態將導線248實質上維持在預定配置中。在晶粒238與導線框240之導線248間之電性連通可以使用導電連接器242，以任何適當方法達成。如同所說明，導電連接器242可以包括接線，其將在晶粒238之電路上之端子電性地連接至相對應導體248。例如，導體248可以包括：一電鍍導線252，其形成於導線框基板250之上表面上；一通孔254，其經由基板延伸；一反覆安裝突塊256，將IC封裝232安裝至基底基板例如PCB(未圖示)上之電路。此在基底基板上之電路可以包括一外部導體，例如外部導體234，其例如可以包括一條導體258，其將突塊256連接至經由基底基板所延伸之另一個通孔260。其他通孔262可以經由導線框基板250延伸，以及可以設置經由基底基板延伸之其他通孔264。
在另一例中，可以將晶粒238反轉，且導電連接器242可以包括突塊或晶粒焊球，如同先前說明，可以將其組態，將在晶粒238之電路上之點直接電性連接至通常被知為“覆晶”配置中之相對應導線248。
可以將導線框240組態，以產生被認為是輻射成形器266，以有效地形成線網障礙(backstop)，用於由天線244所發射之輻射、或由外部天線接收輻射。其他電路連接器亦可以形成輻射反射器，其包括導電連接器242、外部導體234與236之各種組合。此導體可以傳送主動信號或可以為電路接地，因為此兩種形式導體之足夠高頻率之電磁信號會造成輻射之反射或成形。此成形效應可以應用至所接收輻射與發射輻射。此外，各種成形效均為可能，且在一些實施例中，令人想要具有縮減或產生非實質方向成形效應，以主要產生具有全方向或半球體品質之電磁信號。
可以導體248將導線框240組態，而由接腳間距或間隙分開，其例如為在圖12中所顯示之距離G。如果其大輻地小於發射器或接收器之操作頻率之波長，則此距離G可以為有效。例如，可以將接腳間距組態為波長之十分之一。此組態可以有效地產生線網，提供用於天線244之障礙(backstop)，且方向地形成有關電磁信號之形狀，且將其實質上導引離開晶粒238。
圖13與14說明特徵輻射圖案270，其由參考圖11與12說明具有輻射成形器266之典範發射IC封裝232所發射電磁信號模擬所產生。此在圖中所顯示之層通常對應於距離IC封裝232而增加之增益。如同由圖13與14之輻射圖案可以看出，此輻射之方向為離開圖11與12中所顯示之晶粒238與導線框240，其方向對應於天線244所安裝晶粒238之側。
此電磁信號之其他或替代形狀可以藉由將通訊裝置之PCB 132中接地平面150組態而達成，如同參考圖8說明，其電磁信號偏移方向通常取決於PCB接地平面150相對於天線136之組態，其由圖15與16中 觀之嵌設於IC封裝130之右端中。此等圖式說明由不同組態所產生理想輻射圖案，且並非此等組態模擬之結果。實際輻射圖案取決於相對組態、實際結構、以及所施加信號之強度。
在圖15中所顯示之組態中，接地平面150向外延伸超過IC封裝130中天線一段距離F，其遠超過晶粒134位置對面之天線。可以看出，此所產生輻射280向上延伸離開接地平面150且離開IC封裝130。
如同於圖16中顯示，可以安裝第一IC封裝130’，用於與第二IC封裝130”連通。可以將此兩個IC封裝10之一個組態，以發射及/或接收電磁信號，在兩個IC封裝以及與其連接之所附各任何電子電路或組件間提供單向或雙向通訊。圖中顯示第一IC封裝130’安裝至第一PCB 132’，且第二IC封裝130”安裝至第二PCB 132”，因此IC封裝提供PCB間連通。在其他例中，此第一與第二IC封裝130’與130”可以共同位於單一PCB例如PCB 132’上，如同由PCB間之虛線所顯示，以提供PCB間之連通。
此第一IC封裝130’可以包括發射器160，如同參考圖9說明。相對應地，此第二IC封裝130”可以包括接收器180，如同參考圖10說明。可以藉由操作接收器介面電路182之信號偵測器電路以決定IC封裝130’與IC封裝130”之適當相對位置，如同參考圖10說明。
此外，在PCB 132’中接地平面150’可以具有前緣150A’，其通常與IC封裝130’之天線端130A’對齊。以此在IC封裝130’下所凹入之接地平面可以看出，此在圖16中輻射282較圖15中輻射，從終端130A’更向右延伸。因此，取決於所使用實際組態，此輻射可以更朝向 接收器IC封裝130”。此接地平面相對於天線之組態可以作用為輻射成形器。
藉由與此天線間隔之導電元件所提供額外天線導向，此等導電元件亦可作用為輻射成形器。在圖17與18中所顯示之例中，說明通訊裝置290，其包括藉由封裝安裝突塊296將IC封裝292安裝至PCB 294上。此延伸超過IC封裝292而離開IC封裝之終端292A之PCB包含晶粒298與天線300，如同例如參考圖1至3所說明。在此例中，此外部導向結構之陣列302包括導向結構304與306是離開IC封裝終端292A而設置。可以使用陣列，其具有其他形式導引結構，或更多或更少導引結構。
此外部導向結構304與306可以為任何適當結構，將其組態以被動地重新傳送電磁輻射。此外部導向結構304與306可以由任何導電材料製成，例如：銅、鋁、及/或金。此導向結構可以從發射IC封裝292之發射天線終端292A，以週期性地或其他間隔區間而設置。例如，此外部導向結構可以為延長導電棒，其長度Y大約為1mm，且其間隔距離P大約為1mm，如同於圖17與18中所顯示。在此例中，由天線300所發射之輻射308可以將此導向結構304賦能，以產生輻射310。此輻射310再將導向結構306賦能，以產生輻射312。額外之導向結構可以將輻射圖案進一步延伸。可以看出可以產生一複合延長輻射圖案314，其將輻射在有關方向延伸，而超過沒有此等導向結構之之天線300所產生之輻射。
因此，應瞭解，將天線或其他轉換器定位晶片外會導致：有效天線阻抗匹配、獨立天線設計、增加傳輸功率、以及所產生輻射圖案之選擇性方向形狀。因此，可以將輻射導引至接收天線所定位之方向中。將 天線設置於封裝中，亦可以提供客戶更完整組件，其包含組件特徵，除了保護所包含天線防止受到損壞之外，且符合規格與定製操作特徵。
因此，以上說明用於發射與接收信號之系統可以包括：一轉換器，其被組態，在射頻電氣信號與射頻電磁信號之間轉換；一積體電路(IC)，其操作地耦接至此轉換器，此積體電路包括至少一發射器電路，其將基帶信號轉換成射頻電氣信號，且將此射頻電氣信號傳送至轉換器，以及一接收器電路，其從轉換器接收射頻電氣信號，且將其轉換成基帶信號；以及一電磁能量導引組件，其相對於轉換器安裝，用於導引電磁能量至此包含轉換器之區域中，以及導引於離開IC之方向。
在一些例中，此導向組件包括導線框，其提供外部連接至IC上之導體，且將此轉換器組態，以轉換此具有預定波長之信號，此導線框與轉換器分開，且包括複數個分佈於IC之分離之導電元件，且設置得足夠靠近在一起，以反射此具有預定波長之電磁能量。至少一部份導電元件可各與相鄰導電元件分開，其分開距離小於預定波長之六分之一。此導線框可以將由轉換器所轉換之電磁能量顯著地在與轉換器有關方向中反射離開此導線框。此轉換器可以設置在IC之第一側上，在此側上並未設置導線框。此導線框可以沿著與此第一側相鄰之IC至少第二側與第三側設置。可以將導線框組態，以導致在此包含轉換器且在離開導線框延伸之區域中之所接收電磁能量大於、此包含導線框且在離開轉換器延伸之區域中之所接收電磁能量。
此介電基板用於安裝IC、導線框、以及轉換器，且印刷電路板(PCB)具有一主要面，在其上安裝介電基板。此導引組件更包括一安裝 於PCB上之接地平面，此接地平面與PCB之主要面分開且平行，且此轉換器與接地平面間隔分開。此PCB可以由IC對面之轉換器延伸離開，其所具有導引組件包括一或更多個延長導電元件，其設置在沿著離開轉換器方向延伸之線上，且設置在PCB上分開之位置。此一或更多個導電元件可以各沿著此線橫向延伸。
此系統可以更包括：一介電基板以安裝IC與轉換器；以及一印刷電路板(PCB)，其具有一主要面，而於其上安裝介電基板，其所具有導引組件更包括一安裝於PCB上之接地平面而與轉換器對齊。可以設置此轉換器離開此接地平面預先選擇距離，其大於0.25mm。此接地平面可以平行於此IC下PCB之主要面而延伸，且終止於與此轉換器對齊之邊緣，因此，此由轉換器所傳送輻射是在顯著離開IC方向中傳送離開此轉換器。此接地平面可以沿著IC與轉換器延伸且超過此轉換器，此由轉換器所傳送輻射是在離開接地平面方向中傳送。
在一些例中，此系統可以更包括PCB，而IC與轉換器安裝於PCB主要面上。此PCB之主要面可以延伸離開IC對面之轉換器。此導引組件包括一或更多個延長導電元件，其設置在沿著離開轉換器方向中延伸之線上，且設置在PCB上分開之位置。此一或更多個導電元件可以各沿著此線橫向延伸。
產業上應用
在此所說明本發明可以應用於工業與商業，例如電子與通訊業，其使用此裝置與其他裝置通訊，或使用此裝置用於其組件之間通訊。
據瞭解，在此所揭示內容包括具有獨立應用之多個不同發 明。雖然各此等發明以較佳形式揭露，在此所揭示與說明特定實施例不應被認為是限制，因為各種變化均為可能。在以上所揭示之內容中各例界定一實施例，但任何例子並無須包括最終可以主張之所有特徵或其組合。在此所說明內容提及「一」或「一第一」元件或其等同意義，此種說明包含一或更多此種元件，既不須要亦不排除兩個或更多此種元件。此外，順序顯示器，例如使用於辨識元件之第一、第二、或第三，是用於在元件之間區別，且並不表示須要或限制此等元件之數目，且除非另外特別聲明並不表示此等元件之特定位置或順序。
10‧‧‧IC封裝
12‧‧‧晶粒
14‧‧‧轉換器
16‧‧‧導體
18‧‧‧接線
20‧‧‧接線
22‧‧‧接合墊
24‧‧‧接合墊
26‧‧‧封包材料
28‧‧‧變壓器
30‧‧‧天線

Claims (20)

  1. 一種系統，包括：一基板；一積體電路(IC)，安裝至該基板，該IC包含一發射器電路，其轉換一基帶信號成為一極高頻(EHF)電氣信號；一轉換器，操作地耦接至該IC，該轉換器轉換該EHF電氣信號成為具有一波長之一EHF電磁信號；以及一電磁能量導引組件，將來自該轉換器的電磁能量導向離開該IC之一方向，該電磁能量導引組件包括：一複數個接地通孔，經由該基板延伸，該複數個接地通孔形成一通孔壁，其圍繞一空間的至少三側，並且該複數個接地通孔係分開小於該EHF電磁信號之該波長的六分之一；以及一接地平面，與該轉換器以及該等接地通孔重疊。
  2. 如申請專利範圍第1項所述的系統，其中該通孔壁包括一第一通孔壁；一第二通孔壁，平行該第一通孔壁；以及一第三通孔壁，垂直該第一通孔壁以及該第二通孔壁。
  3. 如申請專利範圍第1項所述的系統，進一步包括：一IC封裝，其中該IC封裝包括至少該基板、該IC、該轉換器以及該等接地通孔。
  4. 一種系統，包括：一基板； 一積體電路(IC)，安裝至該基板，該IC包含一發射器電路，其轉換一基帶信號成為一極高頻(EHF)電氣信號；一轉換器，操作地耦接至該IC，該轉換器轉換該EHF電氣信號成為具有一波長的一EHF電磁信號；以及一電磁能量導引組件，將來自該轉換器之電磁能量導向離開該IC之一方向，該電磁能量導引組件包括：一複數個通孔，經由該基板延伸，該複數個通孔形成一通孔壁，其圍繞一空間的至少三側，並且該複數個通孔係分開小於該EHF電磁信號之該波長的一分數；以及一接地平面，與該轉換器以及該等接地通孔重疊。
  5. 如申請專利範圍第4項所述的系統，其中該通孔壁包括一第一通孔壁；一第二通孔壁，平行該第一通孔壁；以及一第三通孔壁，垂直該第一通孔壁以及該第二通孔壁。
  6. 如申請專利範圍第4項所述的系統，進一步包括：一IC封裝，其中該IC封裝包括至少該基板、該IC、該轉換器以及該等通孔。
  7. 如申請專利範圍第6項所述的系統，其中該基板的至少一部份係位於該轉換器以及該接地平面之間。
  8. 如申請專利範圍第7項所述的系統，進一步包括：一印刷電路板(PCB)，具有一主要面，該IC封裝係安裝在該主要面上，其中該導引組件的該接地平面係該PCB的一層。
  9. 如申請專利範圍第8項所述的系統，其中該PCB的該主要面延伸離開該IC對面之該轉換器，該導引組件包含一或更多延長導電元件，其係在該PCB上沿著離開該轉換器之一方向中延伸之一線的分開位置中設置，該一或更多延長導電元件各沿著該線橫向延伸。
  10. 如申請專利範圍第6項所述的系統，其中該導引組件的該接地平面終止於對齊該IC封裝之一端的一邊緣。
  11. 如申請專利範圍第6項所述的系統，其中該導引組件的該接地平面延伸超過該IC封裝的一端。
  12. 如申請專利範圍第4項所述的系統，其中該導引組件包含一導線框，其提供外部連接至該IC上的導體，並且該導線框係與該轉換器間隔且包含一複數個分離之導線，其分佈於該IC周圍且延伸至該等通孔，該複數個分離之導線設置得足夠靠近在一起，以反射具有該波長的電磁能量。
  13. 如申請專利範圍第12項所述的系統，其中該轉換器係設置於該IC的一第一側，並且該導線框不是沿著該IC的該第一側設置。
  14. 如申請專利範圍第13項所述的系統，其中該導線框係至少沿著該IC的第二以及第三側設置，該第二以及第三側係各自相鄰於該第一側。
  15. 如申請專利範圍第4項所述的系統，其中該電磁能量導引組件的該接地平面進一步與該IC重疊。
  16. 如申請專利範圍第4項所述的系統，其中該轉換器係設置離開該接地平面小於該EHF電磁信號之該波長的一距離。
  17. 如申請專利範圍第4項所述的系統，其中該導引組件的該複數個通孔包括接地通孔。
  18. 如申請專利範圍第4項所述的系統，其中該導引組件的該複數個通孔包括主動信號通孔。
  19. 如申請專利範圍第4項所述的系統，其中該導引組件的該複數個通孔係分開小於該EHF電磁信號之該波長的六分之一。
  20. 如申請專利範圍第4項所述的系統，其中該導引組件的該複數個通孔係分開小於該EHF電磁信號之該波長的十分之一。
TW105139861A 2011-03-24 2012-03-23 具有電磁通訊之積體電路 TWI631834B (zh)

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US20120263244A1 (en) 2012-10-18
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