CN103563166B - 具有电磁通信的集成电路 - Google Patents

具有电磁通信的集成电路 Download PDF

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Publication number
CN103563166B
CN103563166B CN201280025060.8A CN201280025060A CN103563166B CN 103563166 B CN103563166 B CN 103563166B CN 201280025060 A CN201280025060 A CN 201280025060A CN 103563166 B CN103563166 B CN 103563166B
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signal
transducer
received
monitor
electromagnetic
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CN103563166A (zh
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伊恩·A·凯乐斯
加里·D·麦科马克
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Molex LLC
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Ji SA Co
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    • H01L2924/30111—Impedance matching

Abstract

一种用于发射或接收信号的系统可包含：集成电路（IC）；换能器，其操作地耦合到所述IC以用于在电信号与电磁信号之间转换；以及绝缘材料，其以相对于彼此隔开的关系固定所述换能器和IC的位置。所述系统可进一步包含引线框架，所述引线框架提供到所述IC上的导体的外部连接。电磁能量引导组合件可相对于所述换能器而安装，以用于在包含所述换能器的区中且在远离所述IC的方向上引导电磁能量。所述引导组合件可包含所述引线框架、印刷电路板接地平面，或与所述换能器隔开的外部导电性元件。在接收器中，信号检测器电路可响应于表示所接收的第一射频电信号的监视器信号，以用于产生启用或停用来自所述接收器的输出的控制信号。

Description

具有电磁通信的集成电路
技术领域
本发明涉及与用于通信的集成电路（IC）相关的系统和方法，例如具有与IC一起嵌入的电磁（EM）换能器（例如，天线）的封装。IC可包含信号检测器电路且/或包含电磁能量引导组合件。
背景技术
半导体制造和电路设计技术上的进步已经实现具有越来越高的操作频率的IC的开发和生产。于是，合并了这种集成电路的电子产品和系统能够比前代产品提供更大的功能性。这种额外的功能性已经一般包含以越来越高的速度来处理越来越大量的数据。
许多电子系统包含多个印刷电路板（PCB），在所述印刷电路板上安装这些高速IC，且通过所述印刷电路板将各种信号路由到IC以及从IC路由各种信号。在具有至少两个PCB以及需要在这些PCB之间传送信息的电子系统中，已经开发出多种连接器以及底板架构来促进所述板之间的信息流。遗憾的是，此些连接器和底板架构将多种阻抗不连续性引入到信号路径中，从而导致信号质量或完整性的降级。通过常规手段（例如，信号载运机械连接器）连接到板一般会产生不连续性，从而需要协商昂贵的电子器件。常规的机械连接器还可能随时间磨损，需要精确的校准和制造方法，并且容易受到机械推撞。
常规连接器的这些特性可导致信号完整性的降级以及需要以非常高的速率传递数据的电子系统的不稳定性，这又限制了这些产品的效用。
发明内容
在一个实例中，一种用于发射或接收信号的系统可包含：换能器，其经配置以在电信号与电磁信号之间转换；集成电路（IC），其操作地耦合到所述换能器；以及绝缘材料。所述IC可含有发射器电路和/或接收器电路。变换器电路可将基带信号变换为射频信号，且将所述射频电信号传导到换能器以作为电磁信号进行发射。接收器电路可从所述换能器接收被所述换能器接收为电磁信号的射频电信号，且将所述电磁信号变换为基带信号。所述IC和所述换能器可至少部分地嵌入于绝缘材料中，且相对于彼此保持在固定位置。
在另一实例中，一种用于发射或接收信号的系统可包含：换能器，其经配置以在射频电信号与射频电磁信号之间转换；IC，其操作地耦合到所述换能器；以及电磁能量引导组合件，其相对于所述换能器而安装。所述IC可含有发射器电路和/或接收器电路。发射器电路可将基带信号变换为射频电信号，且将所述射频信号传导到所述换能器。接收器电路可从所述换能器接收射频电信号，且将所述射频电信号变换为基带信号。电磁能量引导组合件可在包含所述换能器的区中且在远离所述IC的方向上引导电磁能量。
在进一步的实例中，一种系统可包含：换能器，其经配置以将电磁信号转换为电信号；以及IC，其操作地耦合到所述换能器。所述IC可包含接收器电路和信号检测器电路。所述接收器电路可从所述换能器接收射频电信号，且在控制信号具有第一状态时将所述射频电信号变换为基带信号，且在所述控制信号具有不同于所述第一状态的第二状态时不将所述射频电信号变换为基带信号。所述信号检测器电路可响应于表示所接收的第一射频电信号的监视器信号，以用于在所述监视器信号指示所述所接收的第一射频电信号是可接受信号时产生具有第一状态的控制信号，且在所述监视器信号指示所述所接收的第一射频电信号不是可接受信号时产生具有第二状态的控制信号。
一种示范性方法可包含通过换能器接收射频电磁信号，且通过所述换能器将第一射频电磁信号转换为第一射频电信号。集成电路（IC）的接收器电路可接收所述第一射频电信号。可产生表示所述所接收的射频电信号的监视器信号。信号检测器电路可监视所述监视器信号，且确定所述监视器信号是否指示所述所接收的射频电信号是可接受信号。
可在所述监视器信号指示所述所接收的射频电信号是可接受信号时产生具有第一状态的控制信号，且在所述监视器信号指示所述所接收的射频电信号不是可接受信号时产生具有不同于所述第一状态的第二状态的控制信号。所述接收器电路可在所述控制信号具有所述第一状态时从所述射频电信号产生并输出基带信号，且在所述控制信号具有所述第二状态时不将所述射频电信号变换为基带信号。
附图说明
图1展示包含裸片和天线的集成电路（IC）封装的第一实例的简化示意俯视图。
图2展示沿着线2-2取得的图1的IC封装的横截面。
图3是图1和图2的裸片和天线的互连的放大图。
图4展示包含裸片和天线的IC封装的第二实例的示意俯视图。
图5展示包含裸片和天线的IC封装的第三实例的示意俯视图。
图6展示沿着线6-6取得的图5的IC封装的横截面。
图7展示IC封装的另一实施例。
图8展示包含IC封装和PCB的示范性通信装置的示意侧视图。
图9是展示示范性发射器电路和天线的若干部分的简化电路图。
图10是展示示范性接收器电路和天线的若干部分的电路图。
图11展示包含具有外部电路导体的IC封装的另一示范性通信装置的等距视图。
图12展示图11的示范性通信装置的仰视图。
图13和图14说明由经配置为发射器的图11的通信装置产生的代表性辐射图案。
图15和图16展示具有PCB接地平面的两种不同示范性配置和所得辐射图案的程式化表示的发射装置。
图17展示具有隔开的外部引导器结构的示范性发射装置的俯视示意图。
图18展示图17的发射装置的示意侧视图，其展示程式化的代表性辐射图案。
具体实施方式
无线通信可用以在装置上的组件之间提供信号通信，或者可以提供装置之间的通信。无线通信提供不遭受机械和电气降级的接口。在第5,621,913号美国专利以及第2010/0159829号美国公开专利申请案中揭示了使用芯片之间的无线通信的系统的实例，所述专利和申请案的揭示内容以全文引用的方式并入本文中以用于所有目的。
在一个实例中，可部署紧密耦合的发射器/接收器对，其中发射器安置在第一导电路径的端子部分处，且接收器安置在第二导电路径的端子部分处。所述发射器和接收器可彼此紧密接近地安置，这取决于所发射的能量的强度，且第一导电路径和第二导电路径可相对于彼此是不连续的。在示范性版本中，所述发射器和接收器可安置在单独的电路载体上，定位成发射器/接收器对的天线紧密接近。
如下文所论述，发射器或接收器可被配置为IC封装，其中天线可定位成邻近于裸片且通过电介质或绝缘囊封或接合材料而被固持在适当位置。发射器或接收器可被配置为IC封装，其中天线可定位成邻近于裸片且通过封装的囊封材料和/或引线框架衬底而被固持在适当位置。在图中展示且在下文描述了嵌入在IC封装中的EHF天线的若干实例。
图1到图3展示一般在10处指示的示范性IC封装。IC封装10可包含：裸片12；换能器14，其提供电与电磁（EM）信号之间的转换；以及导电性连接器16，例如接合线18、20，其将换能器电连接到接合垫22、24，接合垫22、24连接到裸片12中所包含的发射器或接收器电路。IC封装10可进一步包含形成在裸片和/或换能器的至少一部分周围的囊封材料26。在此实例中，囊封材料26覆盖裸片12、导电性连接器16和换能器14，且以虚线展示，使得可以实线说明裸片和换能器的细节。
裸片12可包含被配置为合适的裸片衬底上的微型化电路的任何合适的结构，且在功能上等效于还被称作“芯片”或“集成电路（IC）”的组件。裸片衬底可为任何合适的半导体材料；举例来说，裸片衬底可为硅。可用图1到图3中未展示的例如引线框架等进一步的电导体16来安装裸片12，从而提供到外部电路的连接。以虚线展示的阻抗变换器28可提供裸片12上的电路与换能器14之间的阻抗匹配。
换能器14可呈折叠偶极天线或环形天线30的形式，可经配置在射频（例如，在EHF频谱中）下操作，且可经配置以发射和/或接收电磁信号。天线30可与裸片12分开，但通过任何合适的导体16操作地连接到裸片12，且可邻近于裸片12而定位。
天线30的尺寸可适合于在电磁频谱的EHF频带中操作。在一个实例中，天线30的环形配置可包含安排在1.4mm长以及0.53mm宽的环中的0.1mm的材料带，其中在所述环的开口处有0.1mm的间隙，且其中所述环的边缘离裸片12的边缘约0.2mm。
囊封材料26可用于辅助将IC封装10的各种组件固持在固定的相对位置。囊封材料26可为经配置以为IC封装10的电气和电子组件提供电绝缘和物理保护的任何合适材料。举例来说，囊封材料26（还被称作绝缘材料）可为模制组件、玻璃、塑料或陶瓷。囊封材料26可以任何合适的形状形成。举例来说，囊封材料26可呈矩形块的形式，从而囊封IC封装10的所有组件，除了将裸片连接到外部电路的导体16的未连接端之外。可与其它电路或组件形成外部连接。
图3展示通过接合线18和20以及接合垫22和24而连接到裸片12的换能器14的示范性配置。接合线和接合垫可经配置以限制换能器14与裸片12的电路之间的阻抗失配。在一个示范性实施例中，接合线18和20可为0.6mm长，其具有约0.3mm的顶部测量（指示为尺寸“L”）。所述接合垫可为约0.066mm的正方形。接合线还可安置成使得其在到相应接合垫的附接点（指示为尺寸“B”）处相隔约0.074mm，且在到天线20的附接点（指示为尺寸“S”）处相隔约0.2mm。可通过使用图1中所展示的变换器28来进一步促进阻抗匹配。
如图2中所示，IC封装10可进一步包含安装到裸片12的下表面的接地平面32和可类似用于PCB的电介质的封装电介质衬底34。接地平面32可为经配置以为裸片12提供电接地的任何合适结构。举例来说，封装接地平面32可为安装在衬底34上的裸片12正下方的导电、矩形、平面结构。衬底34可具有两侧金属化图案，例如顶部表面上的金属化图案36，包含天线30、接地平面32和通过一组合适的导体16（例如，可通过引线框架或倒装芯片凸块，如下文进一步论述）连接到裸片12的导体。封装10可进一步包含外部导体38，所述外部导体将封装连接到外部电路（例如，由倒装芯片焊料球或凸块40表示）。凸块40可通过球垫42和通孔（例如，将凸块46连接到接地平面32的通孔44）而连接到金属化图案36中的导体。
图4到图6展示IC封装的其它配置。图4展示类似于IC封装50的IC封装10，IC封装10具有裸片52、天线54、接合线56、58、接合垫60、62、阻抗变换器64和囊封材料66。然而，在此实例中，天线54是偶极天线。
图5和图6说明也类似于IC封装10的IC封装70，IC封装70具有裸片72、折叠偶极天线74、阻抗变换器76和囊封材料78、封装电介质衬底80、包含天线74和接地平面84的金属化图案82、封装凸块86、通孔88和球垫90。囊封材料78覆盖裸片72和天线74。然而，在此实例中，裸片12通过倒装芯片凸块92以倒装芯片配置而安装在金属化图案82上。具体来说，例如凸块94等倒装芯片凸块将从天线74延伸的导体连接到裸片72的底侧上的对应导体端子，而不使用接合线。
图7展示类似于IC封装70的IC封装100的又一替代性实施例，IC封装100具有裸片102、折叠偶极天线104、囊封材料106、封装电介质衬底108、包含天线104和接地平面112的金属化图案110、封装凸块114、通孔116、球垫118和倒装芯片凸块120。倒装芯片凸块120包含倒装芯片凸块122，倒装芯片凸块122将从天线104延伸的导体连接到裸片102的底侧上的对应导体端子，裸片102倒装芯片安装到衬底108。在此实例中，囊封材料106主要用作裸片102与衬底108之间的底部填充物。
从上文将了解，用于发射或接收信号的系统可包含：换能器，其经配置以在电信号与电磁信号之间进行转换；集成电路（IC），其操作地耦合到所述换能器，所述IC含有发射器电路和接收器电路中的至少一者，所述发射器电路将基带信号变换为射频信号且将射频电信号传导到所述换能器以用于作为电磁信号进行发射，所述接收器电路从所述换能器接收被所述换能器接收为电磁信号的射频电信号，且将所述电磁信号变换为基带信号；以及绝缘材料，所述IC和换能器至少部分地嵌入在其中，所述绝缘材料将所述换能器和IC固持在相对于彼此隔开的固定位置。
这种系统可进一步包含支撑所述换能器、IC和绝缘材料的电介质衬底。所述绝缘材料可完全覆盖所述换能器。
图8展示包含被倒装到示范性印刷电路板（PCB）132的IC封装130的通信装置128的代表性侧视图。在此实例中，可以看到，IC封装130包含裸片134、天线136、将裸片连接到天线的接合线，包含接合线138。所述裸片、天线和接合线被安装在封装衬底140上且被囊封在囊封材料142中。PCB132可包含具有主要面或表面146的顶部电介质层144。IC封装130被倒装到表面146，其中倒装凸块148附接到金属化图案（未图示）。
PCB132可进一步包含与表面146隔开的层150，其由导电性材料制成，从而形成接地平面。PCB接地平面可为经配置以向PCB132上的电路和组件提供电接地的任何合适结构。接地平面层150在天线136下方相隔距离D。距离D可小于设计频率的波长，这取决于IC封装和PCB的配置和尺寸。举例来说，PCB接地平面150可在PCB132的安装表面146下方约0.4mm处定位，且天线136可安装在安装表面146上方约0.25mm的平面中，从而导致天线平面与接地平面的平面之间的0.65mm的距离D。在30GHz与300GHz之间的EHF频带中操作，波长在1cm与1mm之间。
图9展示包含发射器接口电路162和耦合到发射接口电路的天线164的发射器160的简化示范性电子电路图。所述发射接口电路可位于例如图1到图3中所示的裸片12等裸片上，且可包含变换器166、调制器168和放大器170。在此实例中，变换器166耦合到天线164且在一次绕组上从端子172接收电力。所述变换器在与功率放大器组合时可提供谐振放大，且可提供DC阻断和阻抗变换。调制器168可为任何合适的调制器，且被说明为以共源共栅配置由MOSFET形成的箍缩装置，所述箍缩装置在端子174上接收输入信号，用于调制由放大器170传导的载波信号。在此实例中，放大器170包含互补共用源极MOSFET，互补共用源极MOSFET由施加到端子176和178的具有由电压受控振荡器产生的选定载波频率的信号驱动。
图10展示包含接收器接口电路182和天线184的接收器180的简化图。接口电路182可包含在裸片（例如，图1到图3中所说明的裸片12）中的集成电路中。通过变换器与变换器耦合的低噪声放大器的串联连接来传导所接收的经调制射频（RF）信号（例如，EHF频带中的信号），所述串联连接包含第一变换器186、放大器级188、第二变换器190、第二放大器级192和第三变换器194。变换器186、190和194可在相应的端子196、198和200上接收DC偏压。可将放大器电力施加在相应端子202和204上的变换器190和194的相关联的一次绕组上。
经放大和经调节的RF信号被输入到解调器206中，解调器206将所接收的经调制RF信号转换为基带信号。随后可将从解调器206输出的信号馈送到进一步的输出比较器208中。比较器208还从端子210接收输入/输出阈值电平参考信号。在此实例中，基带信号是二进制信号。如果经解调的基带信号在阈值以上，那么来自比较器208的输出是逻辑1，且如果经解调的基带信号在阈值以下，那么所述输出是逻辑0。
一个或多个比较器还可将监视器信号的平均电平与预定最小阈值电平进行比较，从而确定所接收的信号是否强到足够被视为有效。接收器天线可能需要充分靠近发射器天线，从而传送充分强的信号。可以将预定最小阈值电平设定成确保来自发射器的电磁信号被视为有效，且因此在发射器天线和接收器天线位于所要的物理通信范围（例如，5mm到10mm）内的情况下被接收器处理。
更具体来说，可以与在端子210上提供的输入-输出参考组合地将从解调器206输出的经解调基带信号输入到低通滤波器212中。所述滤波器的输出是监视器信号，所述监视器信号表示所接收的经解调基带信号的平均强度，其又表示所接收的RF信号的平均强度。这个平均强度监视器信号连同在端子216上接收的信号-检测阈值参考信号一起被输入到第二比较器214。比较器214进而监视从滤波器212输出的监视器信号，且确定所接收的信号是否为充分强的信号。
于是，来自比较器214的输出是可以具有两个状态中的一者的信号-检测控制信号。在第一状态中，控制信号指示所接收的信号具有被视为有效信号的充分强度。在第二状态中，所述控制信号指示所接收的信号不具有充分强度。来自比较器214的控制信号和来自比较器208的经解调基带信号被输入到“与”门218中。随后在所述控制信号处于第一状态中，从而指示正接收到充分强的信号时，所述“与”门输出基带信号。如果所述控制信号处于第二状态中，那么所述“与”门被停用，且不从接收器接口电路182输出基带信号。在适当时，从比较器214输出的信号-检测信号还可输出到上面安装了IC的裸片或PCB上的其它电路，从而用于其它用途。
接口电路182还可具有自动增益控制（AGC）电路219。AGC电路219可包含第三比较器220，所述第三比较器还从滤波器212接收输出以作为表示所接收的信号的平均强度的信号。比较器在端子222上接收AGC目标电平信号以作为参考信号。所述比较器随后产生输出AGC信号，所述AGC信号被反馈到放大器级188和192，从而控制那些放大器的增益。所述AGC电路将所接收的充分强的信号维持在所要的电平下，从而让接收器接口电路进行输出。于是将看到，输入到信号-检测比较器214中的基带信号是经调节的所接收的信号，所述信号的电平被放大器级188和192响应于AGC控制信号而进行修改。如果监视器信号不充分强，甚至在自动增益控制的情况下也是如此，那么“与”门218被停用且不输出基带信号。
通过上文将了解，在一些实例中，一种系统可包含：第一换能器，其经配置以将电磁信号转换为电信号；以及第一IC，其操作地耦合到所述换能器，所述IC包含：接收器电路，其用于从所述换能器接收第一射频电信号，且将所述第一射频电信号变换为第一基带信号，且在控制信号具有第一状态时输出所述第一基带信号，且在所述控制信号具有不同于所述第一状态的第二状态时不输出所述第一基带信号；以及信号检测器电路，其响应于表示所接收的第一射频电信号的监视器信号，以用于在所述监视器信号指示所接收的第一射频电信号是可接受信号时产生具有第一状态的控制信号，且在所述监视器信号指示所接收的第一射频电信号不是可接受信号时产生具有第二状态的控制信号。
所述信号检测器电路可包含比较器，以用于将所述监视器信号的特性与参考进行比较，所述比较器产生的输出信号指示所述监视器信号的所述特性如何与参考比较，所述信号检测器电路响应于所述输出信号而产生控制信号。所述监视器信号的所述特性可表示所接收的第一射频信号的强度，且所述参考表示阈值信号强度，在所述阈值信号强度以下会停用接收，且在所述阈值信号强度以上会启用接收。所述监视器信号的所述特性可表示平均信号强度。
在一些实例中，此系统可进一步包含：第二换能器，其经配置以将电信号转换为电磁信号，所述第二换能器安置成充分靠近所述第一换能器，以让所述第一换能器接收由所述第二换能器产生的电磁信号；以及第二IC，其操作地耦合到所述第二换能器，所述第二IC含有发射器电路，以用于接收第二基带信号且将所述第二基带信号变换为第二射频电信号，且将所述第二射频电信号传导到所述第二换能器。
在一些实例中，一种方法可包含:通过第一换能器接收第一射频电磁信号；通过所述第一换能器将所述第一射频电磁信号转换为第一射频电信号；通过集成电路（IC）的接收器电路从所述换能器接收所述第一射频电信号；产生表示所接收的第一射频电信号的监视器信号；通过信号检测器电路监视所述监视器信号；确定所述监视器信号是否指示所接收的第一射频电信号是可接受信号；在所述监视器信号指示所述所接收的第一射频电信号是可接受信号时产生具有第一状态的控制信号，且在所述监视器信号指示所述所接收的第一射频电信号不是可接受信号时产生具有不同于所述第一状态的第二状态的控制信号；在所述控制信号具有第一状态时通过所述接收器电路将所述第一射频电信号变换为第一基带信号;且在所述控制信号具有所述第二状态时不通过所述接收器电路将所述第一射频电信号变换为第一基带信号。
确定所述监视器信号是否指示所接收的第一射频电信号是可接受信号可包含：将所述监视器信号的特性与参考进行比较；产生指示所述监视器信号的所述特性如何与所述参考比较的输出信号；且产生所述控制信号包含响应于所述输出信号而产生所述控制信号。所述监视器信号的所述特性可表示所接收的第一射频信号的强度，且所述参考可表示阈值信号强度，在所述阈值信号强度以下会停用接收，且在所述阈值信号强度以上会启用接收。所述监视器信号的所述特性可表示平均信号强度。
在一些实例中，此方法可进一步包含：通过含有发射器电路的第二IC接收第二基带信号；将所述第二基带信号变换为第二射频电信号；将所述第二射频电信号传导到第二换能器；将所述第二换能器定位成充分靠近所述第一换能器，以让所述第一换能器接收由所述第二换能器产生的电磁信号；以及通过所述第二换能器将所述第二射频电信号转换为所述第一射频电磁信号。
图11和图12说明包含具有外部电路导体234和236的IC封装232的另一示范性通信装置230。在此实例中，IC封装232可包含裸片238、引线框架240、呈接合线形式的导电性连接器242、天线244、囊封材料246，以及为了简化说明而未展示的其它组件。裸片236可安装成与引线框架240电连通，所述引线框架可为经配置以允许一个或多个其它电路与裸片238操作地连接的电导体248的任何合适布置。可将天线244构造成生产引线框架240的制造工艺的一部分。
可将引线248嵌入或固定在以虚线展示的对应于图2中所示的封装衬底34的引线框架衬底250中。所述引线框架衬底可为经配置而以预定布置大体上固持引线248的任何合适绝缘材料。可使用导电性连接器242通过任何合适的方法来实现裸片238与引线框架240的引线248之间的电连通。如所提及，导电性连接器242可包含接合线，所述接合线将裸片238的电路上的端子与对应的导体248电连接起来。举例来说，导体248可包含：镀敷引线252，其形成在引线框架衬底250的上表面上；通孔254，其延伸穿过衬底；倒装凸块256，其将IC封装232安装到基底衬底上的电路上，所述基底衬底例如是PCB，未图示。基底衬底上的电路可包含外部导体，例如外部导体234，其例如可包含将凸块256连接到延伸穿过基底衬底的另一通孔260的条带导体258。其它通孔262可延伸穿过引线框架衬底250，且可存在延伸穿过基底衬底的额外通孔264。
在另一实例中，裸片238可颠倒，且导电性连接器242可包含凸块，或裸片焊料球，如先前所描述，其可经配置以通过一般被称作“倒装芯片”的布置将裸片238的电路上的点直接电连接到对应引线248。
引线框架240可经配置以产生可被视为辐射成形器266的东西，从而实际上针对由天线244发射的辐射或从外部天线接收的辐射形成金属丝挡网。其它电路连接器也可用于辐射反射器，包含导电性连接器242、外部导体234和236的各种组合。所述导体可传导有效信号或可为电路接地，因为电磁信号具有充分高的频率，使得两种类型的导体都用于辐射的反射或成形。成形效应应用于所接收的以及所发射的辐射。另外，各种成形效应是可能的，且在一些实施例中，可能需要具有减少的或者非实质的方向性成形效应，从而本质上产生具有全向或者半球形质量的电磁信号。
可用被引脚间距或间隙（例如，图12中所示的距离G）隔开的导体248来配置引线框架240。如果距离G显著小于发射器或接收器的操作频率的一个波长，那么距离G可为有效的。举例来说，引脚间距可被配置为波长的1/10。此配置可有效地形成金属丝网，从而为天线244提供挡网，且将相关联的电磁信号有方向地成形，且将所述电磁信号大体上引导远离裸片238。
图13和图14说明通过模拟从具有参考图11和图12所描述的辐射成形器266的示范性发射IC封装232发出的电磁信号而产生的特征性辐射图案270。图中所表示的指出的层一般与随着距IC封装232的距离增加而增加的增益相对应。如通过图13和图14中的辐射图案可看到，所述辐射在对应于上面安装了天线244的裸片238的侧面的方向上被引导远离图11和图12中所示的裸片238和引线框架240。
可通过如参考图8所描述的通信装置的PCB132中的接地平面150的配置来实现电磁信号的进一步或替代性成形，一般在取决于PCB接地平面150相对于嵌入在IC封装130的右端中的天线136的配置的方向上偏转电磁信号，如图15和图16所示。这些图说明理想化的辐射图案可由不同配置产生，且不是这些配置的模拟结果。实际的辐射图案取决于相对的配置、实际的结构以及所施加的信号的强度。
在图15中所示的配置中，接地平面150向外延伸越过IC封装130中的天线一段距离F，所述距离F与裸片134的位置相反地充分超过所述天线。可看到，所得的辐射280向上延伸远离接地平面150且远离IC封装130。
如图16中所示，可安装第一IC封装130'以用于与第二IC封装130''通信。任一IC封装10可经配置以发射和/或接收电磁信号，从而在两个IC封装与各自连接到的任何相应伴随的电子电路或组件之间提供单向或双向通信。第一IC封装130'展示为被安装到第一PCB132'上，且第二IC封装130''展示为被安装到第二PCB132''上，借此所述IC封装提供PCB间通信。在其它实例中，第一IC封装130'和第二IC封装130''可位于单个PCB（例如，PCB132'）上的同一地点，如通过PCB之间的虚线所指示，从而提供PCB内通信。
第一IC封装130'可包含如参考图9所描述的发射器160。对应地，第二IC封装130''可包含如参考图10所描述的接收器180。可通过操作如参考图10所描述的接收器接口电路182的信号检测电路来确定IC封装130'和IC封装130''的适当相对位置。
另外，PCB132'中的接地平面150'可以具有前缘150A'，前缘150A'一般与IC封装130'的天线末端130A'成一直线。在接地平面下陷于IC封装130'下方的情况下，可看到，辐射282比图15中所示的辐射从末端130A'更多地延伸到图16中的右边。进而，辐射可以更多地被导向接收器IC封装130''，这取决于所使用的实际配置。接地平面相对于天线的配置可以因此还充当辐射成形器。
可以通过与天线隔开的导电性元件来提供额外的辐射引导，所述导电性元件还可以充当辐射成形器。在图17和图18中展示一实例，所述实例说明包含通过封装安装凸块296而安装到PCB294上的IC封装292的通信装置290。举例来说，PCB延伸超过IC封装292，远离IC封装的含有裸片298和天线300的一端292A，如参考图1到图3所论述。在此实例中，包含引导器结构304和306的外部引导器结构的阵列302被安置成远离IC封装端292A。可以使用具有其它形式的引导器结构或者具有更多或更少的引导器结构的阵列。
外部引导器结构304和306可为经配置以被动地转发电磁辐射的任何合适结构。外部引导器结构304和306可由任何导电性材料制成；例如，铜、铝和/或金。所述引导器结构可以与发射IC封装292的发射天线端292A成周期性或以其它方式隔开的间隔来放置。举例来说，外部引导器结构可为具有约1mm长的长度Y且隔开约1mm的距离P的细长导电性杆，如一般在图17和图18中所示。在此实例中，由天线300发射的辐射308可向引导器结构304供给能量，从而产生辐射310。辐射310又可给引导器结构306供给能量，从而产生辐射312。额外的引导器结构可进一步延伸辐射图案。随后可看到，可产生在相关联的方向上使辐射延伸超过原本由天线300在没有这些引导器结构的情况下产生的辐射的复合细长辐射图案314。
因此将了解，将天线或者其它换能器定位在芯片外可实现有效的天线阻抗匹配、独立的天线设计、增加的发射功率，以及所得的辐射图案的选择性方向性成形。因此可在可能定位接收天线的方向上引导辐射。将天线定位在封装内还可向顾客提供更完整的组合件，所述组合件合并了组合件的特征，从而除了保护所合并的天线不被损坏之外，还满足多个规格以及裁定的操作特征。
因此，如上文所描述的用于发射或接收信号的系统可包含：换能器，其经配置以在射频电信号与射频电磁信号之间转换；集成电路（IC），其操作地耦合到所述换能器，所述IC含有发射器电路和接收器电路中的至少一者，所述发射器电路将基带信号变换为射频电信号，且将所述射频信号传导到所述换能器，所述接收器电路从所述换能器接收射频电信号，且将所述射频电信号变换为基带信号；以及电磁能量引导组合件，其相对于所述换能器而安装，以用于在包含所述换能器的区中且在远离所述IC的方向上引导电磁能量。
在一些实例中，所述引导组合件包含引线框架，所述引线框架提供到所述IC上的导体的外部连接，且所述换能器经配置以转换具有预定波长的信号，且所述引线框架与所述换能器隔开且包含多个单独的导体元件，所述多个单独的导体元件围绕所述IC而分布且共同足夠靠拢一起充分紧密地安置，从而反射具有预定波长的电磁能量。导体元件的至少一部分可分别各自与邻近的导体元件间隔开小于不到预定波长的六分之一。所述引线框架可在与换能器相关联的方向上将由换能器转换的电磁能量主要反射远离引线框架。换能器可安置在IC的第一侧上，在所述第一侧上未安置引线框架。引线框架可至少沿着IC的各自邻近于所述第一侧的第二侧和第三侧而安置。引线框架可经配置以致使所接收的电磁能量在包含换能器且延伸远离引线框架的区中比在包含引线框架且延伸远离换能器的区中更强。
IC、引线框架以及换能器安装到电介质衬底，且印刷电路板（PCB）可以具有安装到电介质衬底上面的主表面。引导组合件进一步可包含安装在PCB上的接地平面，所述接地平面与所述PCB的主表面隔开且平行，其中换能器与所述接地平面隔开。所述PCB可与IC相对地延伸远离换能器，其中引导组合件包含一个或多个细长导电性元件，所述一个或多个细长导电性元件沿着在远离换能器的方向上延伸的直线以隔开的位置安置在PCB上。所述一个或多个导电性元件可各自与所述直线横截地延伸。
所述系统可进一步包含IC和换能器安装到电介质衬底上面，且印刷电路板（PCB）具有安装到所述电介质衬底上面的主表面，其中引导组合件进一步包含与所述换能器成一直线地安装在所述PCB上的接地平面。所述换能器可远离接地平面大于0.25mm的预先选定的距离而安置。所述接地平面可在IC下方平行于PCB的主表面而延伸，且终止于与换能器对准的边缘处，借此在主要远离IC的方向上将由换能器发射的辐射引导远离换能器。所述接地平面可沿着IC和换能器而延伸且超过换能器，借此将由换能器发射的辐射引导远离接地平面。
在一些实例中，所述系统可进一步包含具有在上面安装IC和换能器的主表面的PCB。所述PCB的主表面可与IC相对地延伸远离换能器。引导组合件可包含一个或多个细长导电性元件，所述一个或多个细长导电性元件沿着在远离换能器的方向上延伸的直线以隔开的位置安置在PCB上，所述一个或多个导电性元件各自与所述直线横截地延伸。
工业适用性
本文所描述的发明涉及工业和商业范畴，例如电子业及通信业，关于使用与其它装置通信的装置或装置组件间具有通信的装置。
据信，本文所陈述的本发明涵盖具有独立效用的多个不同发明。虽然每个这些发明都已优选形式揭示，但在本文中所揭示和说明的特定实施例将不会受限制性考虑，因为变化众多是可能的。每一个实例界定了前述揭示内容中所揭示的实施例，但不一定涵盖任何一个实例最终要求的所有特征或组合。当在描述中叙述“一个”或“一个第一”的元件或其等同物，此类描述包含一个或多个此类元件，而不需要也不排除有两个或两个以上此类元件。此外，用于识别元件的序数指示（例如，第一、第二或第三），并不指示此类元件为必须的或受数目限制的，并不指示此类元件的特定位置或次序，除非另有特定具体说明。

Claims (12)

1.一种用于通信的系统，其包括：
第一换能器，其经配置以将电磁信号转换为电信号；以及；
第一集成电路(IC)，其操作地耦合到所述第一换能器，所述第一IC包含：
接收器电路，其用于从所述第一换能器接收第一射频电信号，且将所述第一射频电信号变换为第一基带信号，且在控制信号具有第一状态时输出所述第一基带信号，且在所述控制信号具有不同于所述第一状态的第二状态时不输出所述第一基带信号；
信号检测器电路，其基于所述第一基带信号生成表示所述所接收的第一射频电信号的强度的监视器信号，所述信号检测器电路还在所述监视器信号指示所述所接收的第一射频电信号是可接受信号时产生具有所述第一状态的所述控制信号，且在所述监视器信号指示所述所接收的第一射频电信号不是可接受信号时产生具有所述第二状态的所述控制信号；以及
其中所述信号检测器电路包含比较器，以用于将表示所述所接收的射频电信号的强度的所述监视器信号与对应于预定阈值电平的参考进行比较，所述信号检测器电路响应于所述比较器的输出产生所述控制信号。
2.根据权利要求1所述的系统，其中所述参考表示阈值信号强度，在所述阈值信号强度以下会停用接收，且在所述阈值信号强度以上会启用接收。
3.根据权利要求1所述的系统，其中所述监视器信号表示平均信号强度。
4.根据权利要求1所述的系统，其进一步包括：
第二换能器，其经配置以将电信号转换为电磁信号，所述第二换能器安置成充分靠近所述第一换能器，以让所述第一换能器接收由所述第二换能器产生的电磁信号；以及
第二IC，其操作地耦合到所述第二换能器，所述第二IC含有发射器电路，用于接收第二基带信号且将所述第二基带信号变换为第二射频电信号，且将所述第二射频电信号传导到所述第二换能器。
5.根据权利要求1所述的系统，其中由所述第一换能器转换的所述电磁信号在极高频EHF频带。
6.根据权利要求1所述的系统，其中，所述信号检测器电路包括低通滤波器以基于所述第一基带信号产生所述监视器信号。
7.一种用于通信的方法，其包括：
通过第一换能器接收第一射频电磁信号；
通过所述第一换能器将所述第一射频电磁信号转换为第一射频电信号；
通过集成电路(IC)的接收器电路从所述第一换能器接收所述第一射频电信号；
通过所述接收器电路将所述第一射频电信号变换为第一基带信号；
基于所述第一基带信号产生表示所述所接收的第一射频电信号的强度的监视器信号；
通过信号检测器电路监视所述监视器信号；
确定所述监视器信号是否指示所述所接收的第一射频电信号是可接受信号，其中确定所述监视器信号是否指示所述所接收的第一射频电信号是可接受信号包括将所述监视器信号与对应于预定阈值电平的参考进行比较；
在所述监视器信号指示所述所接收的第一射频电信号是可接受信号时产生具有第一状态的控制信号，且在所述监视器信号指示所述所接收的第一射频电信号不是可接受信号时产生具有不同于所述第一状态的第二状态的控制信号，基于所述监视器信号与所述参考的比较结果生成的所述控制信号；
在所述控制信号具有所述第一状态时输出所述第一基带信号；以及
在所述控制信号具有所述第二状态时不输出所述第一基带信号。
8.根据权利要求7所述的方法，其中所述参考表示阈值信号强度，在所述阈值信号强度以下会停用接收，且在所述阈值信号强度以上会启用接收。
9.根据权利要求8所述的方法，其中所述监视器信号表示平均信号强度。
10.根据权利要求7所述的方法，其进一步包括：
通过含有发射器电路的第二IC接收第二基带信号；
将所述第二基带信号变换为第二射频电信号；
将所述第二射频电信号传导到第二换能器；
将所述第二换能器定位成充分靠近所述第一换能器，以让所述第一换能器接收由所述第二换能器产生的电磁信号；以及
通过所述第二换能器将所述第二射频电信号转换为所述第一射频电磁信号。
11.根据权利要求7所述的方法，其中由所述第一换能器接收的所述第一射频电磁信号在极高频EHF频带。
12.根据权利要求7所述的方法，其中所述监视器信号基于所述第一基带信号利用低通滤波器产生。
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Families Citing this family (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7994622B2 (en) * 2007-04-16 2011-08-09 Tessera, Inc. Microelectronic packages having cavities for receiving microelectric elements
US9191263B2 (en) 2008-12-23 2015-11-17 Keyssa, Inc. Contactless replacement for cabled standards-based interfaces
US9219956B2 (en) 2008-12-23 2015-12-22 Keyssa, Inc. Contactless audio adapter, and methods
US9954579B2 (en) 2008-12-23 2018-04-24 Keyssa, Inc. Smart connectors and associated communications links
US9474099B2 (en) 2008-12-23 2016-10-18 Keyssa, Inc. Smart connectors and associated communications links
US8554136B2 (en) 2008-12-23 2013-10-08 Waveconnex, Inc. Tightly-coupled near-field communication-link connector-replacement chips
US9960820B2 (en) 2008-12-23 2018-05-01 Keyssa, Inc. Contactless data transfer systems and methods
TWI429136B (zh) * 2010-04-06 2014-03-01 Univ Nat Taiwan 堆疊天線之結構
JP2014510493A (ja) 2011-03-24 2014-04-24 ウェーブコネックス・インコーポレーテッド 電磁通信用集積回路
US8714459B2 (en) 2011-05-12 2014-05-06 Waveconnex, Inc. Scalable high-bandwidth connectivity
US9614590B2 (en) 2011-05-12 2017-04-04 Keyssa, Inc. Scalable high-bandwidth connectivity
US8811526B2 (en) 2011-05-31 2014-08-19 Keyssa, Inc. Delta modulated low power EHF communication link
WO2012174350A1 (en) 2011-06-15 2012-12-20 Waveconnex, Inc. Proximity sensing and distance measurement using ehf signals
CN106330268B (zh) 2011-09-15 2019-01-22 基萨公司 电介质媒介下的无线通信
CN104115417A (zh) 2011-10-20 2014-10-22 基萨公司 低剖面无线连接器
WO2013059802A1 (en) 2011-10-21 2013-04-25 Waveconnex, Inc. Contactless signal splicing
KR102030203B1 (ko) 2011-12-14 2019-10-08 키사, 아이엔씨. 햅틱 피드백을 제공하는 커넥터들
KR101768993B1 (ko) 2012-01-30 2017-08-17 키사, 아이엔씨. 연결 방출 제어
US9559790B2 (en) 2012-01-30 2017-01-31 Keyssa, Inc. Link emission control
US9344201B2 (en) 2012-01-30 2016-05-17 Keyssa, Inc. Shielded EHF connector assemblies
US9203597B2 (en) 2012-03-02 2015-12-01 Keyssa, Inc. Systems and methods for duplex communication
CN104303436B (zh) 2012-03-06 2017-04-05 凯萨股份有限公司 用于约束ehf通信芯片的操作参数的系统
US9553353B2 (en) 2012-03-28 2017-01-24 Keyssa, Inc. Redirection of electromagnetic signals using substrate structures
US10305196B2 (en) 2012-04-17 2019-05-28 Keyssa, Inc. Dielectric lens structures for EHF radiation
TWI595715B (zh) 2012-08-10 2017-08-11 奇沙公司 用於極高頻通訊之介電耦接系統
US9653927B2 (en) 2012-08-10 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Composite integrated circuits and methods for wireless interactions therewith
KR101873624B1 (ko) 2012-08-10 2018-07-31 키사, 아이엔씨. Ｅｈｆ 가능 디스플레이 시스템
US9577314B2 (en) 2012-09-12 2017-02-21 International Business Machines Corporation Hybrid on-chip and package antenna
CN106330269B (zh) 2012-09-14 2019-01-01 凯萨股份有限公司 具有虚拟磁滞的无线连接
KR20150093830A (ko) 2012-12-14 2015-08-18 키사, 아이엔씨. 무접촉 디지털 저작권 관리 데이터 전송 시스템 및 방법
WO2014100058A1 (en) 2012-12-17 2014-06-26 Waveconnex, Inc. Modular electronics
WO2014150702A1 (en) * 2013-03-15 2014-09-25 Waveconnex, Inc., A Delaware Corporation Physical layer and virtualized physical layer adapted for ehf contactless communication
US9553616B2 (en) 2013-03-15 2017-01-24 Keyssa, Inc. Extremely high frequency communication chip
US9473207B2 (en) 2013-03-15 2016-10-18 Keyssa, Inc. Contactless EHF data communication
CN105144591B (zh) * 2013-03-15 2019-03-08 凯萨股份有限公司 极高频系统及其操作方法
US9426660B2 (en) 2013-03-15 2016-08-23 Keyssa, Inc. EHF secure communication device
EP2997480B1 (en) * 2013-05-16 2018-03-07 Keyssa, Inc. Extremely high frequency converter
EP3058662B1 (en) 2013-10-18 2019-07-31 Keyssa, Inc. Misalignment-tolerant high-density multi-transmitter/receiver modules for extremely-high frequency (ehf) close-proximity wireless connections
JP2016005178A (ja) * 2014-06-18 2016-01-12 株式会社東芝 アンテナ装置、情報処理装置及び記憶装置
US10014957B2 (en) * 2015-03-13 2018-07-03 Texas Instruments Incorporation High speed isolated and optical USB
US9602648B2 (en) 2015-04-30 2017-03-21 Keyssa Systems, Inc. Adapter devices for enhancing the functionality of other devices
US9940295B2 (en) 2015-08-14 2018-04-10 Keyssa, Inc. Extremely high frequency systems and methods of operating the same to establish USB data transport protocols
US9640496B2 (en) * 2015-09-17 2017-05-02 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
US10049801B2 (en) 2015-10-16 2018-08-14 Keyssa Licensing, Inc. Communication module alignment
EP3400486B1 (en) * 2016-01-04 2023-06-07 Infinera Corporation Photonic integrated circuit package
US10250418B2 (en) * 2016-08-02 2019-04-02 Keyssa Systems, Inc. EHF receiver architecture with dynamically adjustable discrimination threshold
US10454526B1 (en) * 2017-01-04 2019-10-22 Keyssa Systems, Inc. Structures for cross-talk reduction
US10516207B2 (en) * 2017-05-17 2019-12-24 Nxp B.V. High frequency system, communication link
US10469112B2 (en) * 2017-05-31 2019-11-05 Silicon Laboratories Inc. System, apparatus and method for performing automatic gain control in a receiver for a packet-based protocol
US11050150B2 (en) 2017-12-01 2021-06-29 Samsung Electro-Mechanics Co., Ltd. Antenna apparatus and antenna module
KR102058667B1 (ko) * 2017-12-01 2019-12-23 삼성전기주식회사 안테나 장치 및 안테나 모듈
CN109873246B (zh) * 2017-12-01 2021-06-18 三星电机株式会社 天线设备及天线模块
KR102022354B1 (ko) * 2017-12-26 2019-09-18 삼성전기주식회사 안테나 모듈 및 안테나 장치
US10978796B2 (en) 2017-12-28 2021-04-13 Samsung Electro-Mechanics Co., Ltd. Antenna apparatus and antenna module
CN110010509B (zh) * 2018-01-05 2023-10-20 光宝新加坡有限公司 双引线架磁耦合封装结构及其制造方法
KR102035824B1 (ko) * 2018-01-23 2019-10-24 삼성전기주식회사 안테나 장치 및 안테나 모듈
US11038274B2 (en) * 2018-01-23 2021-06-15 Samsung Electro-Mechanics Co., Ltd. Antenna apparatus and antenna module
WO2020124339A1 (zh) 2018-12-17 2020-06-25 Oppo广东移动通信有限公司 摄像头安装模组、摄像头组合件及移动终端
JP7304166B2 (ja) * 2019-02-13 2023-07-06 パナソニックホールディングス株式会社 アンテナ装置
KR102117459B1 (ko) * 2019-08-29 2020-06-01 삼성전기주식회사 안테나 장치
US11296424B2 (en) * 2020-01-21 2022-04-05 Rockwell Collins, Inc. Bump mounted radiating element architecture
DE112021000849T5 (de) * 2020-02-05 2022-12-29 Mitsubishi Electric Corporation Vorrichtungsgehäuse, Bildlesevorrichtung und Vorrichtung zur Detektion der elektrostatischen Kapazität

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050140436A1 (en) * 2002-07-19 2005-06-30 Micro Mobio Dual band power amplifier module for wireless communication devices

Family Cites Families (288)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2753551A (en) 1951-06-20 1956-07-03 Raytheon Mfg Co Circularly polarized radio object locating system
GB817349A (en) 1956-04-24 1959-07-29 Marie G R P Circularly polarised microwave lenses
US3796831A (en) 1972-11-13 1974-03-12 Rca Corp Pulse modulation and detection communications system
JPS5410466B2 (zh) 1974-03-01 1979-05-07
US3971930A (en) 1974-04-24 1976-07-27 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Polarization compensator for optical communications
JPS5272502A (en) 1975-12-13 1977-06-17 Mitsubishi Electric Corp Code transmitter
US4293833A (en) 1979-11-01 1981-10-06 Hughes Aircraft Company Millimeter wave transmission line using thallium bromo-iodide fiber
JPS57206125A (en) 1981-06-15 1982-12-17 Toshiba Corp Hysteresis circuit
US4497068A (en) 1982-01-25 1985-01-29 Eaton Corporation Encoding system for optic data link
JPS58191503A (ja) 1982-05-01 1983-11-08 Junkosha Co Ltd 伝送線路
US4678937A (en) 1984-02-03 1987-07-07 Rosemount Engineering Company Limited Electrical isolation circuit
US4800350A (en) 1985-05-23 1989-01-24 The United States Of America As Represented By The Secretary Of The Navy Dielectric waveguide using powdered material
US4694504A (en) 1985-06-03 1987-09-15 Itt Electro Optical Products, A Division Of Itt Corporation Synchronous, asynchronous, and data rate transparent fiber optic communications link
US4771294A (en) 1986-09-10 1988-09-13 Harris Corporation Modular interface for monolithic millimeter wave antenna array
US4875026A (en) 1987-08-17 1989-10-17 W. L. Gore & Associates, Inc. Dielectric waveguide having higher order mode suppression
JP2700553B2 (ja) 1988-03-31 1998-01-21 株式会社 潤工社 伝送回路
US4946237A (en) 1989-06-30 1990-08-07 At&T Bell Laboratories Cable having non-metallic armoring layer
GB9019489D0 (en) 1990-09-06 1990-10-24 Ncr Co Antenna control for a wireless local area network station
US5199086A (en) 1991-01-17 1993-03-30 Massachusetts Institute Of Technology Electro-optic system
US5459405A (en) 1991-05-22 1995-10-17 Wolff Controls Corp. Method and apparatus for sensing proximity of an object using near-field effects
JPH05236031A (ja) 1991-07-23 1993-09-10 Hitachi Maxell Ltd データ伝送方式
US5621913A (en) 1992-05-15 1997-04-15 Micron Technology, Inc. System with chip to chip communication
JPH05327788A (ja) 1992-05-15 1993-12-10 Hitachi Maxell Ltd データ復調回路
JPH076817A (ja) 1993-06-15 1995-01-10 Hitachi Ltd コネクト装置
CA2191721C (en) 1994-06-01 2003-05-20 Ronald R. Carney Wideband wireless basestation making use of time division multiple-access bus to effect switchable connections to modulator/demodulator resources
US5471668A (en) 1994-06-15 1995-11-28 Texas Instruments Incorporated Combined transmitter/receiver integrated circuit with learn mode
DE19512334C1 (de) 1995-04-01 1996-08-29 Fritsch Klaus Dieter Elektromechanische Verbindungsvorrichtung
US5543808A (en) 1995-05-24 1996-08-06 The United States Of America As Represented By The Secretary Of The Army Dual band EHF, VHF vehicular whip antenna
US5749052A (en) 1995-05-24 1998-05-05 Tele Digital Development, Inc. Cellular telephone management system
US6351237B1 (en) 1995-06-08 2002-02-26 Metawave Communications Corporation Polarization and angular diversity among antenna beams
JP3166897B2 (ja) 1995-08-18 2001-05-14 株式会社村田製作所 非放射性誘電体線路およびその集積回路
JPH0983538A (ja) 1995-09-18 1997-03-28 Fujitsu Ltd 無線通信用のｉｏカード及びｉｏカードによる無線通信方式
CN2237914Y (zh) 1995-09-20 1996-10-16 汪雪松 无线助听器
SG46955A1 (en) 1995-10-28 1998-03-20 Inst Of Microelectronics Ic packaging lead frame for reducing chip stress and deformation
US5889449A (en) 1995-12-07 1999-03-30 Space Systems/Loral, Inc. Electromagnetic transmission line elements having a boundary between materials of high and low dielectric constants
DE69633970T2 (de) 1995-12-11 2005-12-01 Hitachi Denshi K.K. Verfahren und Vorrichtung zur Synchronisationsrückgewinnung in einem Datenübertragungssystem
US5754948A (en) 1995-12-29 1998-05-19 University Of North Carolina At Charlotte Millimeter-wave wireless interconnection of electronic components
US5675349A (en) 1996-02-12 1997-10-07 Boeing North American, Inc. Durable, lightweight, radar lens antenna
US5894473A (en) 1996-02-29 1999-04-13 Ericsson Inc. Multiple access communications system and method using code and time division
US5786626A (en) 1996-03-25 1998-07-28 Ibm Corporation Thin radio frequency transponder with leadframe antenna structure
US5956626A (en) 1996-06-03 1999-09-21 Motorola, Inc. Wireless communication device having an electromagnetic wave proximity sensor
US6072433A (en) 1996-07-31 2000-06-06 California Institute Of Technology Autonomous formation flying sensor
CN1178402A (zh) 1996-08-09 1998-04-08 住友电装株式会社 电动汽车用充电连接器
JPH1065568A (ja) 1996-08-21 1998-03-06 Oki Electric Ind Co Ltd 無線装置
JP3786497B2 (ja) 1997-06-13 2006-06-14 富士通株式会社 アンテナ素子を内蔵する半導体モジュール
JP3269448B2 (ja) 1997-07-11 2002-03-25 株式会社村田製作所 誘電体線路
CN2313296Y (zh) 1997-07-25 1999-04-07 电子工业部第五十四研究所 通信信号八重分集接收简易装置
US5941729A (en) 1997-09-10 1999-08-24 International Business Machines Corporation Safe-snap computer cable
US6947795B2 (en) 2001-10-01 2005-09-20 Transoma Medical, Inc. Frame length modulation and pulse position modulation for telemetry of analog and digital data
JP3221382B2 (ja) 1997-12-17 2001-10-22 株式会社村田製作所 非放射性誘電体線路およびその集積回路
JP3889885B2 (ja) 1998-02-27 2007-03-07 シャープ株式会社 ミリ波送信装置、ミリ波受信装置、ミリ波送受信システム及び電子機器
JPH11298343A (ja) 1998-04-15 1999-10-29 Sony Corp 携帯通信装置
JP3028804B2 (ja) 1998-07-03 2000-04-04 日本電気株式会社 Ｃｄｍａ受信方法及び受信回路
US7548787B2 (en) * 2005-08-03 2009-06-16 Kamilo Feher Medical diagnostic and communication system
US6590544B1 (en) 1998-09-01 2003-07-08 Qualcomm, Inc. Dielectric lens assembly for a feed antenna
US6607136B1 (en) 1998-09-16 2003-08-19 Beepcard Inc. Physical presence digital authentication system
US6492973B1 (en) 1998-09-28 2002-12-10 Sharp Kabushiki Kaisha Method of driving a flat display capable of wireless connection and device for driving the same
JP3498597B2 (ja) 1998-10-22 2004-02-16 株式会社村田製作所 誘電体線路変換構造、誘電体線路装置、方向性結合器、高周波回路モジュールおよび送受信装置
US6373447B1 (en) 1998-12-28 2002-04-16 Kawasaki Steel Corporation On-chip antenna, and systems utilizing same
US6542720B1 (en) 1999-03-01 2003-04-01 Micron Technology, Inc. Microelectronic devices, methods of operating microelectronic devices, and methods of providing microelectronic devices
DE19918059C1 (de) 1999-04-21 2000-11-30 Siemens Ag Transceiver mit bidirektionalen internen Schnittstellenleitungen
US6252767B1 (en) 1999-06-22 2001-06-26 Hewlett-Packard Company Low impedance hinge for notebook computer
WO2001017298A1 (en) 1999-09-02 2001-03-08 Automated Business Companies Communication and proximity authorization systems
US6590477B1 (en) 1999-10-29 2003-07-08 Fci Americas Technology, Inc. Waveguides and backplane systems with at least one mode suppression gap
JP3393195B2 (ja) 1999-11-26 2003-04-07 株式会社ホンダエレシス 物体検知装置及び乗員検知システム
US6647246B1 (en) 2000-01-10 2003-11-11 Industrial Technology Research Institute Apparatus and method of synchronization using delay measurements
JP3932767B2 (ja) 2000-05-12 2007-06-20 日立電線株式会社 アレイアンテナ
JP2001339207A (ja) 2000-05-26 2001-12-07 Kyocera Corp アンテナ給電線路およびそれを用いたアンテナモジュール
US6741646B1 (en) 2000-07-25 2004-05-25 Thomson Licensing S.A. Modulation technique for transmitting a high data rate signal, and an auxiliary data signal, through a band limited channel
US6901246B2 (en) 2000-10-06 2005-05-31 Xg Technology, Llc Suppressed cycle based carrier modulation using amplitude modulation
DE10202480A1 (de) 2001-01-30 2002-08-14 Infineon Technologies Ag Verfahren und Vorrichtung zur Übertragung eines Signals von einer Signalquelle zu einer Signalsenke in einem System
US7068733B2 (en) 2001-02-05 2006-06-27 The Directv Group, Inc. Sampling technique for digital beam former
JP2002237036A (ja) 2001-02-08 2002-08-23 Hitachi Ltd 情報記録方法、再生方法及び情報記録装置
JP2002261514A (ja) 2001-02-28 2002-09-13 Matsushita Electric Ind Co Ltd Ｎｒｄガイド回路
US6512431B2 (en) 2001-02-28 2003-01-28 Lockheed Martin Corporation Millimeterwave module compact interconnect
JP3530829B2 (ja) 2001-03-12 2004-05-24 日本ピラー工業株式会社 電子部品用フッ素樹脂組成物
JP2002312000A (ja) 2001-04-16 2002-10-25 Sakai Yasue 圧縮方法及び装置、伸長方法及び装置、圧縮伸長システム、ピーク検出方法、プログラム、記録媒体
US7769347B2 (en) 2001-05-02 2010-08-03 Trex Enterprises Corp. Wireless communication system
US6882239B2 (en) 2001-05-08 2005-04-19 Formfactor, Inc. Electromagnetically coupled interconnect system
US6967347B2 (en) 2001-05-21 2005-11-22 The Regents Of The University Of Colorado Terahertz interconnect system and applications
US6534784B2 (en) 2001-05-21 2003-03-18 The Regents Of The University Of Colorado Metal-oxide electron tunneling device for solar energy conversion
US6531977B2 (en) 2001-08-03 2003-03-11 Mcewan Technologies, Llc Pulse center detector for radars and reflectometers
US7146139B2 (en) 2001-09-28 2006-12-05 Siemens Communications, Inc. System and method for reducing SAR values
JP2003218612A (ja) 2001-11-16 2003-07-31 Murata Mfg Co Ltd 誘電体線路、高周波回路、および高周波回路装置
JP3852338B2 (ja) 2002-01-15 2006-11-29 株式会社Ｋｄｄｉ研究所 路車間通信システムにおける移動局の通信リンク接続切断方法
JP4523223B2 (ja) 2002-04-26 2010-08-11 株式会社日立製作所 レーダセンサ
JP4054634B2 (ja) 2002-08-27 2008-02-27 沖電気工業株式会社 半導体装置
DE10242645A1 (de) 2002-09-13 2004-03-25 Magcode Ag Verfahren und Vorrichtung zur Herstellung einer elektrischen Verbindung von Baugruppen und Modulen
US7436876B2 (en) 2002-11-15 2008-10-14 Time Domain Corporation System and method for fast acquisition of ultra wideband signals
US7737822B2 (en) 2002-11-21 2010-06-15 Nxp B.V. Method of recognizing whether a transponder belongs to a group of transponders
JP4514463B2 (ja) 2003-02-12 2010-07-28 パナソニック株式会社 送信装置及び無線通信方法
US20040176056A1 (en) 2003-03-07 2004-09-09 Shen Feng Single-tone detection and adaptive gain control for direct-conversion receivers
US7603710B2 (en) 2003-04-03 2009-10-13 Network Security Technologies, Inc. Method and system for detecting characteristics of a wireless network
US7113087B1 (en) 2003-04-08 2006-09-26 Microsoft Corporation Proximity sensing based on antenna impedance variation
US7024232B2 (en) 2003-04-25 2006-04-04 Motorola, Inc. Wireless communication device with variable antenna radiation pattern and corresponding method
US7039397B2 (en) 2003-07-30 2006-05-02 Lear Corporation User-assisted programmable appliance control
US7228102B2 (en) 2003-08-05 2007-06-05 Avago Technologie Ecbu Ip (Singapore) Pte. Ltd. Resonant frequency user proximity detection
JP2005117153A (ja) 2003-10-03 2005-04-28 Toshiba Corp 無線通信装置、無線通信方法、及び無線通信媒体
JP4133747B2 (ja) 2003-11-07 2008-08-13 東光株式会社 誘電体導波管の入出力結合構造
US7213766B2 (en) 2003-11-17 2007-05-08 Dpd Patent Trust Ltd Multi-interface compact personal token apparatus and methods of use
US20050124307A1 (en) 2003-12-08 2005-06-09 Xytrans, Inc. Low cost broadband wireless communication system
US7761092B2 (en) 2004-02-06 2010-07-20 Sony Corporation Systems and methods for communicating with multiple devices
US20070273476A1 (en) 2004-03-26 2007-11-29 Semiconductor Energy Laboratory Co., Ltd. Thin Semiconductor Device And Operation Method Of Thin Semiconductor Device
JP4200939B2 (ja) 2004-05-19 2008-12-24 ソニー株式会社 無線通信システムと受信装置と受信方法
FR2871312B1 (fr) 2004-06-03 2006-08-11 St Microelectronics Sa Modulation de charge dans un transpondeur electromagnetique
US20060029229A1 (en) 2004-08-03 2006-02-09 Alexei Trifonov QKD station with EMI signature suppression
US20060082518A1 (en) 2004-10-19 2006-04-20 Pranil Ram Multiple monitor display apparatus
US8527003B2 (en) 2004-11-10 2013-09-03 Newlans, Inc. System and apparatus for high data rate wireless communications
US8060102B2 (en) 2004-12-14 2011-11-15 Bce Inc. System and method for coverage analysis in a wireless network
GB0428046D0 (en) 2004-12-22 2005-01-26 Artimi Ltd Contactless connector systems
US7787562B2 (en) 2004-12-29 2010-08-31 Motorola, Inc. Method and apparatus for adaptive modulation of wireless communication signals
JP3793822B1 (ja) 2005-01-07 2006-07-05 オプテックス株式会社 マイクロウエーブセンサ
US7881675B1 (en) 2005-01-07 2011-02-01 Gazdzinski Robert F Wireless connector and methods
GB0501593D0 (en) 2005-01-25 2005-03-02 Innovision Res & Tech Plc Demodulation apparatus and method
US7975079B2 (en) 2005-02-07 2011-07-05 Broadcom Corporation Computer chip set having on board wireless interfaces to support parallel communication
US8244179B2 (en) 2005-05-12 2012-08-14 Robin Dua Wireless inter-device data processing configured through inter-device transmitted data
US20060276157A1 (en) 2005-06-03 2006-12-07 Chen Zhi N Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications
CN101288236A (zh) 2005-07-08 2008-10-15 鲍尔卡斯特公司 借助通信的功率传输系统、设备和方法
JP2007036722A (ja) 2005-07-27 2007-02-08 Toshiba Corp 半導体装置
US7352567B2 (en) 2005-08-09 2008-04-01 Apple Inc. Methods and apparatuses for docking a portable electronic device that has a planar like configuration and that operates in multiple orientations
US7342299B2 (en) 2005-09-21 2008-03-11 International Business Machines Corporation Apparatus and methods for packaging antennas with integrated circuit chips for millimeter wave applications
EP1969388A1 (en) 2005-09-23 2008-09-17 California Institute Of Technology A mm-WAVE FULLY INTEGRATED PHASED ARRAY RECEIVER AND TRANSMITTER WITH ON CHIP ANTENNAS
US7311526B2 (en) 2005-09-26 2007-12-25 Apple Inc. Magnetic connector for electronic device
US20070108296A1 (en) * 2005-11-14 2007-05-17 Konopka John A Radio frequency identification devices and methods
GB0525635D0 (en) 2005-12-16 2006-01-25 Innovision Res & Tech Plc Chip card and method of data communication
US20070147425A1 (en) 2005-12-28 2007-06-28 Wavesat Wireless modem
US7599427B2 (en) 2005-12-30 2009-10-06 Honeywell International Inc. Micro range radio frequency (RF) communications link
US7512395B2 (en) 2006-01-31 2009-03-31 International Business Machines Corporation Receiver and integrated AM-FM/IQ demodulators for gigabit-rate data detection
US8014416B2 (en) 2006-02-14 2011-09-06 Sibeam, Inc. HD physical layer of a wireless communication device
US7664461B2 (en) 2006-03-02 2010-02-16 Broadcom Corporation RFID reader architecture
US7899394B2 (en) 2006-03-16 2011-03-01 Broadcom Corporation RFID system with RF bus
US8681810B2 (en) 2006-04-13 2014-03-25 Qualcomm Incorporated Dynamic carrier sensing thresholds
JP4506722B2 (ja) 2006-05-19 2010-07-21 ソニー株式会社 半導体素子結合装置、半導体素子、高周波モジュール及び半導体素子結合方法
JP4702178B2 (ja) 2006-05-19 2011-06-15 ソニー株式会社 半導体結合装置、半導体素子及び高周波モジュール
US7598923B2 (en) 2006-05-22 2009-10-06 Sony Corporation Apparatus and method for communications via multiple millimeter wave signals
US7808087B2 (en) 2006-06-01 2010-10-05 Broadcom Corporation Leadframe IC packages having top and bottom integrated heat spreaders
US7467948B2 (en) 2006-06-08 2008-12-23 Nokia Corporation Magnetic connector for mobile electronic devices
US8338930B2 (en) 2006-06-21 2012-12-25 Broadcom Corporation Integrated circuit with electromagnetic intrachip communication and methods for use therewith
JP2008022247A (ja) 2006-07-12 2008-01-31 Toshiba Corp Ａｇｃシステム
US8081699B2 (en) 2006-07-15 2011-12-20 Kazimierz Siwiak Wireless communication system and method with elliptically polarized radio frequency signals
US7936274B2 (en) 2006-08-30 2011-05-03 Exponent Inc. Shield for radio frequency ID tag or contactless smart card
JP2008083679A (ja) 2006-08-31 2008-04-10 Seiko Epson Corp 表示装置および電子機器
JP2008079241A (ja) * 2006-09-25 2008-04-03 Sharp Corp 検波回路、変調方式判定回路、集積回路、チューナ装置、および多方式共用受信装置
CN101523664B (zh) 2006-10-03 2013-06-05 碧姆网络有限公司 相移振荡器和天线
US8271713B2 (en) 2006-10-13 2012-09-18 Philips Electronics North America Corporation Interface systems for portable digital media storage and playback devices
US7612674B2 (en) * 2006-10-27 2009-11-03 Sony Corporation Radio frequency identification system
US9065682B2 (en) 2006-11-01 2015-06-23 Silicon Image, Inc. Wireless HD MAC frame format
JP2008124917A (ja) 2006-11-14 2008-05-29 Sony Corp 無線通信システム並びに無線通信装置
US20080112101A1 (en) 2006-11-15 2008-05-15 Mcelwee Patrick T Transmission line filter for esd protection
US8041227B2 (en) 2006-11-16 2011-10-18 Silicon Laboratories Inc. Apparatus and method for near-field communication
JP2008129919A (ja) 2006-11-22 2008-06-05 Toshiba Corp 非接触式ｉｃカードリーダライタ装置及び送信電波出力レベル制御方法
US9697556B2 (en) 2007-09-06 2017-07-04 Mohammad A. Mazed System and method of machine learning based user applications
US7820990B2 (en) 2006-12-11 2010-10-26 Lockheed Martin Corporation System, method and apparatus for RF directed energy
GB0700671D0 (en) 2006-12-15 2007-02-21 Innovision Res & Tech Plc Nfc communicator and method of data communication
US7557303B2 (en) 2006-12-18 2009-07-07 Lsi Corporation Electronic component connection support structures including air as a dielectric
US8013610B1 (en) 2006-12-21 2011-09-06 Seektech, Inc. High-Q self tuning locating transmitter
US7460077B2 (en) 2006-12-21 2008-12-02 Raytheon Company Polarization control system and method for an antenna array
EP1936741A1 (en) 2006-12-22 2008-06-25 Sony Deutschland GmbH Flexible substrate integrated waveguides
US7557758B2 (en) 2007-03-26 2009-07-07 Broadcom Corporation Very high frequency dielectric substrate wave guide
US7974587B2 (en) 2006-12-30 2011-07-05 Broadcom Corporation Local wireless communications within a device
US8350761B2 (en) 2007-01-04 2013-01-08 Apple Inc. Antennas for handheld electronic devices
US8200156B2 (en) 2007-01-31 2012-06-12 Broadcom Corporation Apparatus for allocation of wireless resources
US8374157B2 (en) 2007-02-12 2013-02-12 Wilocity, Ltd. Wireless docking station
JP5034857B2 (ja) 2007-10-12 2012-09-26 ソニー株式会社 コネクタシステム
JP2008250713A (ja) * 2007-03-30 2008-10-16 Renesas Technology Corp 半導体集積回路装置
JP2008252566A (ja) 2007-03-30 2008-10-16 Matsushita Electric Ind Co Ltd Ａｖ機器
US8063769B2 (en) 2007-03-30 2011-11-22 Broadcom Corporation Dual band antenna and methods for use therewith
US20080290959A1 (en) 2007-05-22 2008-11-27 Mohammed Ershad Ali Millimeter wave integrated circuit interconnection scheme
US8351982B2 (en) 2007-05-23 2013-01-08 Broadcom Corporation Fully integrated RF transceiver integrated circuit
US7743659B2 (en) 2007-05-25 2010-06-29 The Boeing Company Structural health monitoring (SHM) transducer assembly and system
US7722358B2 (en) 2007-06-15 2010-05-25 Microsoft Corporation Electrical connection between devices
US7768457B2 (en) 2007-06-22 2010-08-03 Vubiq, Inc. Integrated antenna and chip package and method of manufacturing thereof
US7929474B2 (en) 2007-06-22 2011-04-19 Vubiq Incorporated System and method for wireless communication in a backplane fabric architecture
US7617342B2 (en) 2007-06-28 2009-11-10 Broadcom Corporation Universal serial bus dongle device with wireless telephony transceiver and system for use therewith
US7952531B2 (en) * 2007-07-13 2011-05-31 International Business Machines Corporation Planar circularly polarized antennas
US7830311B2 (en) * 2007-07-18 2010-11-09 Murata Manufacturing Co., Ltd. Wireless IC device and electronic device
US7941110B2 (en) 2007-07-23 2011-05-10 Freescale Semiconductor, Inc. RF circuit with control unit to reduce signal power under appropriate conditions
US7908420B2 (en) 2007-07-31 2011-03-15 Broadcom Corporation Processing system with millimeter wave host interface and method for use therewith
US7825775B2 (en) 2007-07-31 2010-11-02 Symbol Technologies, Inc. Antenna-based trigger
EP2034623A1 (en) 2007-09-05 2009-03-11 Nokia Siemens Networks Oy Adaptive adjustment of an antenna arrangement for exploiting polarization and/or beamforming separation
US8965309B2 (en) 2007-09-18 2015-02-24 Broadcom Corporation Method and system for calibrating a power amplifier
US8244175B2 (en) 2007-09-28 2012-08-14 Broadcom Corporation Method and system for signal repeater with gain control and spatial isolation
US20090086844A1 (en) 2007-09-28 2009-04-02 Ahmadreza Rofougaran Method And System For A Programmable Local Oscillator Generator Utilizing A DDFS For Extremely High Frequencies
US7881753B2 (en) 2007-09-28 2011-02-01 Broadcom Corporation Method and system for sharing multiple antennas between TX and RX in a repeat field of polarization isolation
US8023886B2 (en) 2007-09-28 2011-09-20 Broadcom Corporation Method and system for repeater with gain control and isolation via polarization
US8634767B2 (en) 2007-09-30 2014-01-21 Broadcom Corporation Method and system for utilizing EHF repeaters and/or transceivers for detecting and/or tracking an entity
US8856633B2 (en) 2007-10-03 2014-10-07 Qualcomm Incorporated Millimeter-wave communications for peripheral devices
US7746256B2 (en) 2007-10-05 2010-06-29 Infineon Technologies Ag Analog to digital conversion using irregular sampling
US8121542B2 (en) 2007-10-16 2012-02-21 Rafi Zack Virtual connector based on contactless link
US8428528B2 (en) 2007-10-24 2013-04-23 Biotronik Crm Patent Ag Radio communications system designed for a low-power receiver
US7880677B2 (en) * 2007-12-12 2011-02-01 Broadcom Corporation Method and system for a phased array antenna embedded in an integrated circuit package
US20090153260A1 (en) * 2007-12-12 2009-06-18 Ahmadreza Rofougaran Method and system for a configurable transformer integrated on chip
EP2077518B1 (en) 2008-01-03 2013-10-02 Nxp B.V. Transponder detection by resonance frequency reduction
US7873122B2 (en) 2008-01-08 2011-01-18 Qualcomm Incorporated Methods and devices for wireless chip-to-chip communications
US9537566B2 (en) 2008-01-11 2017-01-03 Alcatel-Lucent Usa Inc. Realizing FDD capability by leveraging existing TDD technology
TWI348280B (en) 2008-01-21 2011-09-01 Univ Nat Taiwan Dual injection locked frequency dividing circuit
US8310444B2 (en) 2008-01-29 2012-11-13 Pacinian Corporation Projected field haptic actuation
US7750435B2 (en) 2008-02-27 2010-07-06 Broadcom Corporation Inductively coupled integrated circuit and methods for use therewith
US7795700B2 (en) 2008-02-28 2010-09-14 Broadcom Corporation Inductively coupled integrated circuit with magnetic communication path and methods for use therewith
US8415777B2 (en) 2008-02-29 2013-04-09 Broadcom Corporation Integrated circuit with millimeter wave and inductive coupling and methods for use therewith
US8399960B2 (en) 2008-03-13 2013-03-19 Nec Corporation Semiconductor device
US20090236701A1 (en) 2008-03-18 2009-09-24 Nanyang Technological University Chip arrangement and a method of determining an inductivity compensation structure for compensating a bond wire inductivity in a chip arrangement
JP4292231B1 (ja) 2008-03-24 2009-07-08 株式会社東芝 電子機器
JP4497222B2 (ja) 2008-03-26 2010-07-07 ソニー株式会社 通信装置及び通信方法、並びにコンピュータ・プログラム
US8269344B2 (en) 2008-03-28 2012-09-18 Broadcom Corporation Method and system for inter-chip communication via integrated circuit package waveguides
JP2009239842A (ja) 2008-03-28 2009-10-15 Renesas Technology Corp 無線通信システム
WO2009122333A2 (en) 2008-03-31 2009-10-08 Nxp B.V. Digital modulator
US8184651B2 (en) 2008-04-09 2012-05-22 Altera Corporation PLD architecture optimized for 10G Ethernet physical layer solution
US8755849B2 (en) 2008-05-07 2014-06-17 Broadcom Corporation Method and system for power management in a beamforming system
US20090280765A1 (en) 2008-05-07 2009-11-12 Ahmadreza Rofougaran Method And System For On-Demand Filtering In A Receiver
CN102067682B (zh) 2008-06-16 2014-07-16 日本电气株式会社 基站控制模块、无线基站、基站控制设备和基站控制方法
US9300508B2 (en) 2008-08-07 2016-03-29 Trex Enterprises Corp. High data rate milllimeter wave radio on a chip
US8392965B2 (en) 2008-09-15 2013-03-05 Oracle International Corporation Multiple biometric smart card authentication
JP2010103982A (ja) 2008-09-25 2010-05-06 Sony Corp ミリ波伝送装置、ミリ波伝送方法、ミリ波伝送システム
US8131645B2 (en) 2008-09-30 2012-03-06 Apple Inc. System and method for processing media gifts
CN102483777A (zh) 2008-10-10 2012-05-30 S·E·特纳 到达远程用户的内容数据流的受控传递
US8630588B2 (en) 2008-10-29 2014-01-14 Marvell World Trade Ltd. Efficient and flexible transmit beamforming sector sweep in a multi-antenna communication device
US8346234B2 (en) 2008-11-08 2013-01-01 Absolute Software Corporation Secure platform management with power savings capacity
US8854277B2 (en) 2008-11-19 2014-10-07 Nxp, B.V. Millimetre-wave radio antenna module
US8324990B2 (en) 2008-11-26 2012-12-04 Apollo Microwaves, Ltd. Multi-component waveguide assembly
US20100149149A1 (en) 2008-12-15 2010-06-17 Lawther Joel S Display system
FR2940568A1 (fr) 2008-12-22 2010-06-25 Thomson Licensing Procede de transmission dans un reseau sans-fil et procede de gestion de communication correspondant
US8554136B2 (en) 2008-12-23 2013-10-08 Waveconnex, Inc. Tightly-coupled near-field communication-link connector-replacement chips
US20100167645A1 (en) 2008-12-25 2010-07-01 Kabushiki Kaisha Toshiba Information processing apparatus
JP5556072B2 (ja) 2009-01-07 2014-07-23 ソニー株式会社 半導体装置、その製造方法、ミリ波誘電体内伝送装置
US8964634B2 (en) 2009-02-06 2015-02-24 Sony Corporation Wireless home mesh network bridging adaptor
TWI384814B (zh) 2009-02-06 2013-02-01 Univ Nat Taiwan 差動射頻訊號傳送機、差動射頻訊號接收機與無線射頻訊號收發系統
US8326221B2 (en) 2009-02-09 2012-12-04 Apple Inc. Portable electronic device with proximity-based content synchronization
EP2401825B1 (en) 2009-02-26 2013-12-04 Battelle Memorial Institute Submersible vessel data communications system
US8760342B2 (en) 2009-03-31 2014-06-24 Kyocera Corporation Circuit board, high frequency module, and radar apparatus
JP2010245990A (ja) 2009-04-09 2010-10-28 Seiko Epson Corp 通信方法および通信システム
JP2010256973A (ja) 2009-04-21 2010-11-11 Sony Corp 情報処理装置
US8179333B2 (en) * 2009-05-08 2012-05-15 Anokiwave, Inc. Antennas using chip-package interconnections for millimeter-wave wireless communication
US8244189B2 (en) 2009-05-20 2012-08-14 Broadcom Corporation Method and system for chip-to-chip mesh networks
US8346847B2 (en) 2009-06-03 2013-01-01 Apple Inc. Installing applications based on a seed application from a separate device
JP5836938B2 (ja) 2009-06-10 2015-12-24 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 超高速データ転送速度能力を有する短距離通信のためのミリメートル波無線相互接続（ｍ２ｗ２相互接続）方法
US9007968B2 (en) 2009-06-16 2015-04-14 Samsung Electronics Co., Ltd. System and method for wireless multi-band networks association and maintenance
US8812833B2 (en) 2009-06-24 2014-08-19 Marvell World Trade Ltd. Wireless multiband security
JP5278210B2 (ja) 2009-07-13 2013-09-04 ソニー株式会社 無線伝送システム、電子機器
US8427296B2 (en) 2009-07-14 2013-04-23 Apple Inc. Method and apparatus for determining the relative positions of connectors
US8605826B2 (en) 2009-08-04 2013-12-10 Georgia Tech Research Corporation Multi-gigabit millimeter wave receiver system and demodulator system
JP5316305B2 (ja) 2009-08-13 2013-10-16 ソニー株式会社 無線伝送システム、無線伝送方法
JP2011044944A (ja) 2009-08-21 2011-03-03 Sony Corp 通信装置、通信システム及び通信方法
JP2011044953A (ja) 2009-08-21 2011-03-03 Sony Corp Ａｖ機器用の有線伝送線路
EP2290391B1 (en) 2009-09-01 2020-12-16 G4S Monitoring Technologies Limited Proximity sensors
FR2951321B1 (fr) 2009-10-08 2012-03-16 St Microelectronics Sa Dispositif semi-conducteur comprenant un guide d'ondes electro-magnetiques
EP2309608B1 (en) 2009-10-09 2014-03-19 Ondal Medical Systems GmbH Rotatable electrical coupling and connector therefor
CN201562854U (zh) 2009-11-25 2010-08-25 联想(北京)有限公司 磁性连接器及具有该磁性连接器的电子设备
US8390249B2 (en) 2009-11-30 2013-03-05 Broadcom Corporation Battery with integrated wireless power receiver and/or RFID
US8279611B2 (en) 2009-12-09 2012-10-02 Research In Motion Limited Flexible cable having rectangular waveguide formed therein and methods of manufacturing same
EP2360923A1 (en) 2010-02-24 2011-08-24 Thomson Licensing Method for selectively requesting adaptive streaming content and a device implementing the method
JP2011176672A (ja) 2010-02-25 2011-09-08 Olympus Corp 通信変換装置、通信中継システム、および、通信装置
JP5500679B2 (ja) 2010-03-19 2014-05-21 シリコンライブラリ株式会社 無線伝送システム並びにそれに用いられる無線送信機、無線受信機、無線送信方法、無線受信方法、及び無線通信方法
JP5665074B2 (ja) 2010-03-19 2015-02-04 シリコンライブラリ株式会社 無線伝送システム並びにそれに用いられる無線送信機、無線受信機、無線送信方法、無線受信方法、及び無線通信方法
US8781420B2 (en) 2010-04-13 2014-07-15 Apple Inc. Adjustable wireless circuitry with antenna-based proximity detector
US8774252B2 (en) * 2010-05-27 2014-07-08 Qualcomm Incorporated System and method for transmtting and receiving signal with quasi-periodic pulse sequence
US8843076B2 (en) 2010-07-06 2014-09-23 Intel Corporation Device, system and method of wireless communication over a beamformed communication link
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101288173B1 (ko) 2010-09-17 2013-07-18 삼성전기주식회사 단말기 및 그의 무선 통신 방법
US8358596B2 (en) 2010-09-20 2013-01-22 Research In Motion Limited Communications system providing mobile wireless communications device application module associations for respective wireless communications formats and related methods
US9118217B2 (en) 2010-09-30 2015-08-25 Broadcom Corporation Portable computing device with wireless power distribution
US20120126794A1 (en) 2010-11-22 2012-05-24 Raymond Jensen Sensor Assembly And Methods Of Assembling A Sensor Probe
EP2461485B1 (en) 2010-12-01 2013-07-31 Dialog Semiconductor GmbH A device and method for the transmission and reception of high-fidelity audio using a single wire
JP2014510493A (ja) 2011-03-24 2014-04-24 ウェーブコネックス・インコーポレーテッド 電磁通信用集積回路
US20120249366A1 (en) 2011-04-04 2012-10-04 Raytheon Company Communications on the move antenna system
US9141616B2 (en) 2011-05-06 2015-09-22 Google Inc. Physical confirmation for network-provided content
US8714459B2 (en) 2011-05-12 2014-05-06 Waveconnex, Inc. Scalable high-bandwidth connectivity
US9614590B2 (en) 2011-05-12 2017-04-04 Keyssa, Inc. Scalable high-bandwidth connectivity
EP2707968B1 (en) 2011-05-12 2019-07-10 Keyssa, Inc. Scalable high-bandwidth connectivity
US8811526B2 (en) 2011-05-31 2014-08-19 Keyssa, Inc. Delta modulated low power EHF communication link
TWI561020B (en) 2011-05-31 2016-12-01 Keyssa Inc Delta modulated low power ehf communication link
WO2012166502A1 (en) 2011-06-03 2012-12-06 Marvell World Trade, Ltd. Method and apparatus for local oscillation distribution
WO2012174350A1 (en) 2011-06-15 2012-12-20 Waveconnex, Inc. Proximity sensing and distance measurement using ehf signals
US20130278360A1 (en) 2011-07-05 2013-10-24 Waveconnex, Inc. Dielectric conduits for ehf communications
EP2730035A2 (en) 2011-07-05 2014-05-14 Waveconnex, Inc. Ehf communication with electrical isolation and with dielectric transmission medium
CN106330268B (zh) 2011-09-15 2019-01-22 基萨公司 电介质媒介下的无线通信
CN104115417A (zh) 2011-10-20 2014-10-22 基萨公司 低剖面无线连接器
WO2013059802A1 (en) 2011-10-21 2013-04-25 Waveconnex, Inc. Contactless signal splicing
KR102030203B1 (ko) 2011-12-14 2019-10-08 키사, 아이엔씨. 햅틱 피드백을 제공하는 커넥터들
US9559790B2 (en) 2012-01-30 2017-01-31 Keyssa, Inc. Link emission control
US9203597B2 (en) 2012-03-02 2015-12-01 Keyssa, Inc. Systems and methods for duplex communication
CN104303436B (zh) 2012-03-06 2017-04-05 凯萨股份有限公司 用于约束ehf通信芯片的操作参数的系统
US9553353B2 (en) 2012-03-28 2017-01-24 Keyssa, Inc. Redirection of electromagnetic signals using substrate structures
TWI595715B (zh) 2012-08-10 2017-08-11 奇沙公司 用於極高頻通訊之介電耦接系統
KR101873624B1 (ko) 2012-08-10 2018-07-31 키사, 아이엔씨. Ｅｈｆ 가능 디스플레이 시스템
US9179490B2 (en) 2012-11-29 2015-11-03 Intel Corporation Apparatus, system and method of disconnecting a wireless communication link
US9608862B2 (en) 2013-03-15 2017-03-28 Elwha Llc Frequency accommodation
EP3058662B1 (en) 2013-10-18 2019-07-31 Keyssa, Inc. Misalignment-tolerant high-density multi-transmitter/receiver modules for extremely-high frequency (ehf) close-proximity wireless connections

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050140436A1 (en) * 2002-07-19 2005-06-30 Micro Mobio Dual band power amplifier module for wireless communication devices

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