TW201642360A - 扇出系統級封裝及用於形成其之方法 - Google Patents

扇出系統級封裝及用於形成其之方法 Download PDF

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TW201642360A
TW201642360A TW105106198A TW105106198A TW201642360A TW 201642360 A TW201642360 A TW 201642360A TW 105106198 A TW105106198 A TW 105106198A TW 105106198 A TW105106198 A TW 105106198A TW 201642360 A TW201642360 A TW 201642360A
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die
rdl
package
conductive
bonded
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TW105106198A
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TWI605526B (zh
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鍾智明
軍 翟
懿彰 楊
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蘋果公司
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Abstract

本發明描述封裝及形成方法。在一實施例中，一種系統級封裝(SiP)包括第一及第二重佈層(RDL)、在該等第一及第二RDL之間的堆疊式晶粒，及在該等RDL之間延伸的導電柱。一模製化合物可在該等第一及第二RDL之間囊封該等堆疊式晶粒及導電柱。

Description

扇出系統級封裝及用於形成其之方法
本文中所描述之實施例係關於半導體封裝。更特定言之，實施例係關於扇出系統級封裝(SiP)。
針對諸如行動電話、個人數位助理(PDA)、數位攝影機、攜帶型播放器、遊戲裝置及其他行動裝置之攜帶型及行動電子裝置的當前市場需求要求將較多效能及特徵整合至愈來愈小之空間中。因此，諸如系統級封裝(SiP)及疊層封裝(PoP)之各種多晶粒封裝解決方案已變得較風行以滿足針對較高組件密度裝置之需求。
系統級封裝(SiP)結構通常包括呈單一封裝之兩個或兩個以上不相似晶粒作為功能系統或子系統。舉例而言，邏輯及記憶體可連同諸如被動裝置、MEMS裝置、感測器等等之其他組件一起組合成單一封裝。SiP內之晶粒可垂直地堆疊或水平地配置於載體上。晶粒通常與晶片外導線接合件或焊料凸塊連接。SiP可組裝於中介層上以扇出用於整合式產品之電端子。
新近，疊層封裝(PoP)結構已變得愈來愈風行。PoP技術通常涉及運用標準介面將兩個或兩個以上封裝安裝於彼此之頂部上以在該等封裝之間路由信號。高組件密度裝置可通常具有安裝於邏輯封裝或系統單晶片(SoC)封裝之頂部上的記憶體封裝。普通PoP結構包括在頂部封 裝與底部封裝之間的中介層以扇出電端子。
在一實施例中，一種封裝包括具有一第一內側及第一外側之一第一重佈層(RDL)，及接合至該第一RDL之該第一內側之一第一晶粒。亦包括一第二內側及第二外側之一第二RDL在該第一RDL之下，且一第二晶粒接合至該第二RDL之該第二內側。複數個導電柱自該第一RDL之該第一內側延伸至該第二RDL之該第二內側。一模製化合物定位於該第一RDL之該第一內側與該第二RDL之該第二內側之間，且在該第一內側與該第二內側之間囊封該複數個導電柱、該第一晶粒及該第二晶粒。該模製化合物可為在該第一RDL之該第一內側與該第二RDL之該第二內側之間且囊封該複數個該等導電柱、該第一晶粒及該第二晶粒的均一組合物之一連續層。
在一實施例中，該封裝為一扇出系統級封裝(SiP)結構，其中該第一晶粒為一記憶體裝置，且該第二晶粒為一邏輯裝置。該封裝可包括在該第二RDL之該第二外側上之複數個導電凸塊(例如，焊料凸塊)，例如，用於整合至一印刷電路板上。該封裝可包括額外整合。舉例而言，一裝置可接合至該第一RDL之該第一外側。例示性裝置包括一罩蓋、熱散播器、被動組件及積體電路晶粒。
根據實施例，該第一晶粒堆疊於該第二晶粒上，且該第一晶粒不與該第二晶粒直接地電耦接。舉例而言，該第一晶粒可運用一晶粒附接膜或熱增強膠帶而附接至該第二晶粒。在此組態中，該第一晶粒可經由該等第一及第二RDL以及導電柱而與該第二晶粒通信，或反之亦然。在一實施例中，該第一晶粒包括具有接觸墊之一前側及不包括接觸墊之一背側，且該第二晶粒包括具有接觸墊之一前側及不包括接觸墊之一背側。在此組態中，該第一晶粒之該前側接合至該第一RDL，且該第二晶粒之該前側接合至該第二RDL。在一實施例中，該第一晶 粒之該背側面對該第二晶粒之該背側。該第一晶粒之該背側可運用一晶粒附接膜而附接至該第二晶粒之該背側。
實施例描述各種多晶粒堆疊組態。在一實施例中，一第三晶粒接合至該第二RDL之該第二內側，其中該第一晶粒堆疊於該第二晶粒及該第三晶粒兩者上。在一實施例中，一第四晶粒接合至該第一RDL之該第一內側。在一實施例中，該第一晶粒及該第四晶粒附接至該第二晶粒，且該第一晶粒及該第四晶粒一起相較於該第二晶粒佔據一較大區域。該第一晶粒及該第四晶粒可運用該第二晶粒之一背側上之一晶粒附接膜而附接至該第二晶粒。該第三晶粒可替代地為一被動組件。
在一實施例中，一被動組件接合至該第一RDL之該第一內側。舉例而言，該被動組件可表面黏著於該第一RDL之該第一內側上。在一個組態中，該被動組件接合至該第一RDL之該第一內側及該第二RDL之該第二內側兩者。舉例而言，該被動組件可被整合為該複數個導電柱之一圖案之部分，諸如圍繞該晶粒堆疊形成一周邊之一圖案。
在一實施例中，該第二RDL包括直接地形成於該第二晶粒之一接觸墊上之一重佈線。該第二RDL可另外包括直接地形成於一導電柱上之一重佈線。在一實施例中，該第一晶粒上之一導電凸塊接合至該第一RDL之一接觸墊。舉例而言，此組態可與覆晶接合、熱壓縮以及各種導電及非導電層之使用一致。諸如一非導電膏(NCP)或非導電膜(NCF)之一層可視情況橫向地環繞該導電凸塊。在一實施例中，一各向異性導電膜直接地在該第一晶粒上之該導電凸塊與該第一RDL之該接觸墊之間。
在一實施例中，一種形成一扇出系統級封裝之方法包括：在一載體基板上形成一第一重佈層；形成複數個導電柱(例如，藉由在該第一重佈層上鍍覆或植入銅管柱)；在該複數個導電柱之一周界內部將一第一晶粒附接至該第一重佈層；在該第一晶粒上堆疊一第二晶粒； 將該第二晶粒、該第一晶粒及該複數個導電柱囊封於一模製化合物中；及在該模製化合物、該第二晶粒及該複數個導電柱上形成一第二重佈層。根據實施例，可執行多種操作以在形成該第二RDL之前曝露或調節該第二晶粒及複數個導電柱。在一實施例中，在將該第二晶粒、該第一晶粒及該複數個導電柱囊封於該模製化合物中之後及在形成該第二RDL之前縮減該模製化合物及該複數個導電柱之一厚度。在一實施例中，在形成該第二RDL之前在該模製化合物中形成開口以曝露該第二晶粒上之裝載墊。在一實施例中，在將該第二晶粒、該第一晶粒及該複數個導電柱囊封於該模製化合物中之後及在形成該第二RDL之前自該第二晶粒移除一保護膜以曝露該第二晶粒上之裝載墊。
100‧‧‧封裝
102‧‧‧載體基板
109‧‧‧第一外側
110‧‧‧第一重佈層(RDL)
111‧‧‧第一內側
112‧‧‧導電重佈線
114‧‧‧介電層
115‧‧‧接觸墊
118‧‧‧導電凸塊
120‧‧‧導電柱
121‧‧‧經曝露表面
122‧‧‧非導電膜(NCF)
124‧‧‧各向異性導電膜(ACF)
126‧‧‧導電粒子
129‧‧‧第一側/前側
130‧‧‧第一晶粒
131‧‧‧背側
134‧‧‧鈍化層
135‧‧‧第四晶粒
136‧‧‧接觸墊
139‧‧‧前側/前表面
140‧‧‧第二晶粒
141‧‧‧背側
144‧‧‧晶粒附接膜
145‧‧‧第三晶粒/被動組件
146‧‧‧接觸墊
147‧‧‧經曝露表面
150‧‧‧模製化合物
151‧‧‧頂部表面
152‧‧‧開口
160‧‧‧金屬化層
170‧‧‧犧牲層
172‧‧‧離型膜
180‧‧‧組件
190‧‧‧鑄模工具
209‧‧‧第二外側
210‧‧‧第二重佈層(RDL)
211‧‧‧第二內側
212‧‧‧重佈線
214‧‧‧介電層
220‧‧‧導電凸塊
302‧‧‧熱界面材料或晶粒附接膜
310‧‧‧熱散播器或罩蓋
410‧‧‧晶粒或封裝
420‧‧‧導電凸塊
A1‧‧‧區域
A2‧‧‧區域
A3‧‧‧區域
圖1為根據一實施例之載體基板上之第一RDL的橫截面側視圖說明。
圖2為根據一實施例之形成於第一RDL上之複數個柱的橫截面側視圖說明。
圖3A至圖3B為根據實施例之接合至第一RDL之複數個晶粒及組件的橫截面側視圖說明。
圖4A為根據一實施例之運用導電凸塊而接合至第一RDL之晶粒的特寫橫截面側視圖說明。
圖4B為根據一實施例之運用導電凸塊及非導電層而接合至第一RDL之晶粒的特寫橫截面側視圖說明。
圖4C為根據一實施例之運用導電凸塊及各向異性導電膜而接合至第一RDL之晶粒的特寫橫截面側視圖說明。
圖5為根據一實施例之堆疊於複數個第一晶粒上之第二晶粒的橫截面側視圖說明。
圖6A為根據一實施例之經囊封晶粒堆疊的橫截面側視圖說明。
圖6B至圖6C為根據一實施例之模製及離型膜移除程序的橫截面側視圖說明。
圖7A至圖7B為根據一實施例之模製及背面研磨程序的橫截面側視圖說明。
圖8A至圖8B為根據一實施例之模製及圖案化程序的橫截面側視圖說明。
圖9A至圖9B為根據一實施例之模製及犧牲層移除程序的橫截面側視圖說明。
圖10為根據一實施例之第二RDL之形成的橫截面側視圖說明。
圖11為根據一實施例之在自載體基板移除之後的具有導電凸塊之封裝的橫截面側視圖說明。
圖12為根據一實施例之包括接合至第一及第二RDL之複數個晶粒之封裝的橫截面側視圖說明。
圖13為根據一實施例之包括電磁干擾(EMI)屏蔽層之封裝的橫截面側視圖說明。
圖14為根據一實施例之包括附接至第一RDL之外側的熱散播器或罩蓋之封裝的橫截面側視圖說明。
圖15為根據一實施例之包括接合至第一RDL之外側的額外晶粒、被動組件或封裝之封裝的橫截面側視圖說明。
實施例描述扇出系統級封裝(SiP)結構及製造方法。在各種實施例中，參考諸圖進行描述。然而，可在沒有此等特定細節中之一或多者的情況下或與其他已知方法及組態組合地實踐某些實施例。在以下描述中，闡述諸如特定組態、尺寸及製程等等之眾多特定細節，以便提供對實施例之透徹理解。在其他情況下，尚未以特定細節描述熟知之半導體製程及製造技術以免不必要地混淆實施例。貫穿本說明書而對 「一個實施例」之參考意謂結合該實施例所描述之特定特徵、結構、組態或特性包括於至少一個實施例中。因此，貫穿本說明書之各種地方的片語「在一個實施例中」之出現未必係指同一實施例。此外，可在一或多個實施例中以任何合適方式組合特定特徵、結構、組態或特性。
如本文中所使用之術語「上方」、「之上」、「至」、「之間」、「跨越」及「上」可指一個層相對於其他層之相對位置。在另一層「上方」、在另一層「之上」、「跨越」另一層或在另一層「上」或接合「至」另一層或與另一層「接觸」之一個層可與另一層直接地接觸，或可具有一或多個介入層。在若干層「之間」的一個層可與該等層直接地接觸，或可具有一或多個介入層。如本文中所使用之單數術語「晶粒」等效於單數術語「晶片」。
在一項態樣中，實施例描述充分利用重佈層(RDL)以用於堆疊式晶粒之電端子之扇出的SiP結構。具體言之，在一實施例中，堆疊式晶粒配置包括接合至頂側重佈層(RDL)以用於扇出之頂部晶粒，及接合至底側RDL以用於扇出之底部晶粒，其中頂部及底部RDL經由導電柱而彼此整合作為在頂部RDL與底部RDL之間延伸的垂直導體。因此，實施例描述具有雙側RDL配置之SiP結構。此組態可允許運用對應RDL來扇出每一個別晶粒。此外，此組態可允許諸如邏輯/記憶體(例如，ASIC/DRAM)之不相似晶粒整合，而無通常用於PoP及SiP整合中之額外矽或有機中介層。
在其他態樣中，實施例描述切斷晶粒與通常在PoP解決方案中發現之垂直導體之厚度相關性的雙側RDL配置，其中此厚度相關性描述頂部封裝之底部晶粒與底部表面之間的支座高度。此可歸因於將晶粒堆疊與晶粒在頂部RDL與底部RDL之間的直接晶片至晶片附接整合之實施例的能力。此外，實施例描述可縮減總封裝厚度之具有直接晶片 至晶片附接的雙側RDL配置。舉例而言，相對於中介層，使用用於扇出之RDL可有助於總封裝厚度縮減。另外，實施例可允許採用較薄晶粒，其中接觸墊在接合至對應RDL的該晶粒之單一側上。
在另一態樣中，可在無諸如焊料回焊之預封裝製程的情況下達成直接晶片至晶片附接，因此減輕與焊料回焊相關聯之機械及翹曲擔憂，該焊料回焊通常係與許多SiP應用中之晶片至晶片附接或許多PoP應用中之封裝至封裝附接相關聯。
現在參看圖1，提供形成於載體基板102(諸如晶圓或面板(例如，玻璃))上之第一重佈層(RDL)110的橫截面側視圖說明。第一RDL 110可包括單一或多個重佈線112。在一實施例中，第一RDL 110包括嵌入式重佈線112(嵌入式跡線)。舉例而言，藉由首先形成晶種層，隨後形成金屬(例如，銅)圖案，可產生重佈線112。替代地，可藉由沈積(例如，濺鍍)及蝕刻來形成重佈線。重佈線112之材料可包括但不限於金屬材料，諸如銅、鈦、鎳、金，及其組合或合金。接著將重佈線112之金屬圖案嵌入於介電層114中，介電層114視情況被圖案化。介電層114可為諸如氧化物或聚合物(例如，聚醯亞胺)之任何合適材料。重佈線112之經曝露部分可對應於用於晶粒接合的第一RDL 110之接觸墊，或用於導電柱生長之晶種層。第一RDL 110可包括單一重佈線112或多個重佈線112及介電層114。第一RDL 110可藉由逐層製程而形成，且可使用薄膜技術而形成。根據實施例，第一RDL 110可具有小於習知有機或層壓基板之厚度。舉例而言，習知六層有機或層壓基板可具有300μm至500μm之厚度。第一RDL 110之厚度可由導電重佈線112及介電層114之數目以及形成方式判定。根據實施例，導電重佈線可具有大約3μm至10μm之厚度，且介電層具有2μm至5μm之厚度。與習知有機或層壓基板相比較，根據實施例之RDL可另外允許較窄線間隔寬度(精細間距)及較薄線。在一實施例中，第一RDL 110具 有小於50μm之總厚度，或更尤其為大約30μm或更小，諸如大約20μm。在一實施例中，第一RDL 110之外側109係由用於第一RDL 110之鈍化的介電層114形成。在一些實施例中，可展開最外介電層114以用於進一步封裝整合。在一些實施例中，第一RDL之最外層為用於熱耗散或電磁干擾(EMI)屏蔽之金屬層。下文描述各種結構組態。
圖2中說明導電柱120之形成。導電柱120可使用合適處理技術而形成，且可由多種合適材料(例如，銅)及層形成。在一實施例中，藉由鍍覆技術(諸如使用經圖案化光阻層以界定柱結構尺寸之電鍍)，隨後移除經圖案化光阻層，而形成導電柱120。導電柱120之材料可包括但不限於金屬材料，諸如銅、鈦、鎳、金，及其組合或合金。在一實施例中，藉由將銅管柱植入於第一RDL上而形成導電柱120。
現在參看圖3A至圖3B，一或多個晶粒130接合至第一RDL 110，且視情況，組件180接合至第一RDL 110。舉例而言，組件180可為諸如電容器或電感器之被動組件。在所說明實施例中，複數個晶粒130在複數個導電柱120之周邊內接合至第一RDL之內側111。在一實施例中，第一晶粒130包括具有接觸墊136之第一側129及不包括接觸墊之背側131。第一側129可另外包括環繞接觸墊之鈍化層134。如所說明，第一晶粒130之前側129接合至第一RDL 110。晶粒130之特定類型可取決於特定應用。舉例而言，晶粒130可為邏輯、記憶體或其他組件。不同類型之晶粒130可接合至第一RDL 110。在圖3A所說明之實施例中，晶粒130及組件180係表面黏著於第一RDL 110之內側111上。如所展示，組件180亦可定位於複數個導電柱120之周邊內。在圖3B所說明之實施例中，組件180經說明為替換導電柱120之圖案中的導電柱中之一或多者，但無需如此。因此，組件180可被整合為導電柱120之圖案之部分，諸如環繞晶粒130之圖案，及隨後附接至晶粒130之任何額外晶粒或組件。在圖3B所說明之實施例中，組件180可 接合至尚待形成之第一RDL 110及第二RDL 210兩者。因此，根據圖3A至圖3B，諸如電容器或電感器之被動組件可表面黏著於靠近晶粒130之第一RDL 110上，而不損害封裝z高度。
可使用多種技術來實現接合。舉例而言，可使用覆晶方法來附接晶粒130或組件180。在圖4A所說明之實施例中，晶粒130或組件180之接觸墊136係使用導電凸塊118(諸如焊料材料)而接合至第一RDL 110之接觸墊115。歸因於載體基板102之存在，可在此階段抑制與焊料回焊相關聯之熱畸變問題。在圖4B所說明之實施例中，晶粒130或組件180係運用導電凸塊118及橫向地環繞導電凸塊118之非導電膏(NCP)或非導電膜(NCF)122而接合至第一RDL 110。在此實施例中，可使用熱壓縮以將導電凸塊118接合至接觸墊115來實現接合。導電凸塊118可由可在接觸墊115內擴散之材料(諸如金或焊料材料)形成。在圖4C所說明之實施例中，晶粒130或組件180係運用直接地在第一晶粒上之導電凸塊118與第一RDL 110之接觸墊115之間的各向異性導電膜(ACF)124而接合至第一RDL 110。在此實施例中，導電凸塊118可為自晶粒130延伸之螺柱凸塊。又或替代地，螺柱凸塊可自第一RDL 110之接觸墊115延伸。ACF 124內之導電粒子126可在所判定位置處產生晶粒130與第一RDL 110之間的電連接。
在以下描述中，利用圖3A至圖3B所說明之實施例來描述及說明額外處理序列。應瞭解，此為例示性的，且實施例並不受到如此限制。舉例而言，實施例可包括來自圖3A或圖3B之單一組件180、組件180之數個組合，或無組件180。現在參看圖5，一或多個晶粒140堆疊於一或多個晶粒130或組件180之頂部上。舉例而言，晶粒140可為邏輯或記憶體。不同類型之晶粒140可堆疊於一或多個晶粒130或組件180之頂部上。此外，亦可運用其他主動裝置或被動組件來替換所說明晶粒140。在一實施例中，第二晶粒140包括具有接觸墊146之前側 139及不包括接觸墊之背側141。如所展示，第一晶粒130之背側131面對第二晶粒140之背側141。因此，在一實施例中，晶粒140不直接地電耦接至經堆疊有晶粒140之晶粒130。在一實施例中，第一晶粒130之背側131係運用晶粒附接膜144而附接至第二晶粒140之背側141。根據實施例，可在第一晶粒130上之單粒化及堆疊之前將晶粒附接膜144施加至第二晶粒140之陣列。舉例而言，可藉由層壓、印刷或施配來施加晶粒附接膜144。在一實施例中，單一第二晶粒140堆疊於多個第一晶粒130之頂部上。在此實施例中，晶粒附接膜144可跨越於多個第一晶粒130之間，如圖5所說明。在一實施例中，晶粒附接膜144係由黏接材料形成。晶粒附接膜144可另外為用於熱耗散之導熱黏接劑。可視情況在晶粒堆疊之後經由(例如)化學、熱或紫外光來固化晶粒附接膜144。
可接著運用模製化合物(諸如熱固性交聯樹脂(例如，環氧樹脂)、液體或顆粒、薄片或膜)來囊封堆疊式晶粒及導電柱，但可使用如電子封裝中所知之其他材料。可使用諸如但不限於轉注模製或壓縮模製、液體囊封劑射出及層壓之合適技術來實現囊封。如本文中所使用，「經囊封」並不要求將所有表面包覆於模製化合物內。舉例而言，在圖6A所說明之實施例中，晶粒140及導電柱120之橫向側包裹於模製化合物150中，而模製化合物不形成於晶粒140之前表面139之上，且導電柱120之頂部表面被曝露。
根據實施例，在連同第二晶粒140一起之囊封之前，第一晶粒130及組件180先前尚未囊封於第一RDL 110上。根據實施例，模製化合物150填充第一RDL 110之第一內側111與第二RDL 210(尚待形成，參見圖10)之第二內側211之間的空間，且在該第一內側與該第二內側之間囊封複數個導電柱120、第一晶粒130，及第二晶粒140以及(視情況)組件180。如所說明，模製化合物150為填充第一RDL 110之第一內 側111與第二RDL 210之第二內側211之間的空間且囊封導電柱120及晶粒130、135、140、145的均一組合物之連續層。如所說明，模製化合物150橫向地環繞導電柱120及晶粒130、135、140、145中之每一者，且亦橫向地定位於鄰近晶粒之間。
在圖6A所說明之實施例中，模製化合物150之頂部表面151係與導電柱120之經曝露表面121及晶粒140及選用組件180之接觸墊146之經曝露表面147共面。可以多種方式來達成對模製化合物150高度之控制，以及導電柱120及接觸墊146之曝露。舉例而言，可由在模製操作期間所使用之模製空穴控制模製化合物之頂部表面151。
圖6B至圖6C為根據一實施例之模製及離型膜移除程序的橫截面側視圖說明。如所說明，可在模製操作(例如，轉注模製或液體囊封劑射出)之前將離型膜172施加至鑄模工具190表面。離型膜172可保護導電柱120及接觸墊146以及晶粒140及組件180之前表面139免於複合或囊封。在一實施例中，離型膜172具有足夠厚度(諸如40μm)以適應晶粒疊裝及導電柱之高度變化。如圖6C所展示，在模製之後釋放晶粒附接膜以曝露導電柱120之表面121及接觸墊146之表面147。
圖7A至圖7B為模製及背面研磨程序之橫截面側視圖說明。根據實施例，描述切斷晶粒與通常在PoP解決方案中發現之垂直導體之厚度相關性的雙側RDL配置。在一些實施例中，導電柱120之初始高度大於堆疊式晶粒130、140之高度。可接著以多種方法來縮減導電柱120之高度。在圖7A至圖7B所說明之實施例中，初始囊封操作可引起模製化合物150遍及晶粒140、組件180之前側139且潛在地遍及導電柱120而散播。可接著處理模製化合物以曝露晶粒140及選用組件180之接觸墊146。在圖7A至圖7B所說明之實施例中，可使用研磨(例如，化學機械拋光)或蝕刻操作來縮減模製化合物150之厚度。在圖7B所說明之特定實施例中，模製化合物150之頂部表面151係與導電柱120之 經曝露表面121以及晶粒140及組件180之接觸墊146之經曝露表面147共面。在一實施例中，接觸墊146最初可呈晶片支柱(圖7A所說明)之形式，其接著被背面研磨，從而得到經曝露接觸墊146(圖7B所說明)。
實施例並不限於晶粒140之接觸墊146之經曝露表面147係與模製化合物150之頂部表面151共面的結構。圖8A至圖8B為模製及圖案化程序之橫截面側視圖說明。在所說明實施例中，初始囊封操作可引起模製化合物150遍及晶粒140、組件180之前側139且潛在地遍及導電柱120而散播。在圖8A所說明之囊封之後，如圖8B所說明而圖案化模製化合物150以形成開口152以曝露晶粒140及組件之接觸墊146之表面147且視情況曝露導電柱120之表面121。因此，並非全域地研磨或回蝕，而是可使用選擇性圖案化技術(諸如雷射鑽孔或化學蝕刻)以曝露接觸墊146及導電柱120。圖9A至圖9B為模製及圖案化程序之橫截面側視圖說明。在所說明實施例中，在圖9A所說明之囊封之後，自晶粒140之前表面139選擇性地移除犧牲層170以曝露接觸墊146。
雖然已分離地描述圖6B至圖6C、圖7A至圖7B、圖8A至圖8B及圖9A至圖9B，但製程並不彼此排斥且可在一些實施例中進行組合。
現在參看圖10，第二RDL 210形成於模製化合物150之頂部表面151、晶粒140及選用組件180之接觸墊146之經曝露表面147以及導電柱120之經曝露表面121之上。第二RDL 210可與第一RDL 110相似地被形成，且可包括單一或多個重佈線212。在一實施例中，重佈線212直接地形成於接觸墊146之經曝露表面147及導電柱120之經曝露表面121上。因此，晶粒140係依靠形成第二RDL 210之重佈線212及介電層214而接合至該第二RDL。
根據實施例，圖10所說明之雙側RDL配置及直接晶片至晶片晶粒堆疊配置允許縮減總封裝厚度。舉例而言，沒有必要包括支座高度， 其中導電柱120(垂直導體)將實質上高於包括選用組件180之晶粒堆疊130、140。舉例而言，沒有必要包括設計容差以適應運用典型PoP解決方案中之焊球進行的頂部封裝至底部封裝之接合，在典型PoP解決方案中，習知焊球高度為大約30μm至150μm。此外，使用頂部及底部RDL會允許相較於普通中介層具有實質上較低厚度之電端子之扇出的精細線及間隔界定。第二RDL 210可藉由逐層製程而形成，且可使用薄膜技術而形成。根據實施例，第一RDL 110可具有小於習知有機或層壓基板之厚度。舉例而言，習知六層有機或層壓基板可具有300μm至500μm之厚度。第一RDL 110之厚度可由導電重佈線112及介電層114之數目以及形成方式判定。根據實施例，導電重佈線可具有大約3μm至10μm之厚度，且介電層具有2μm至5μm之厚度。與習知有機或層壓基板相比較，根據實施例之RDL可另外允許較窄線間隔寬度(精細間距)及較薄線。舉例而言，第一RDL 110及第二RDL 210可各自具有小於50μm之厚度，或更尤其為大約30μm或更小，諸如大約20μm。
現在參看圖11，在形成第二RDL 210之後，可將導電凸塊220附接至第二RDL 210或生長於第二RDL 210上，可釋放載體基板102，且單粒化個別封裝100。多種結構可用於導電凸塊220。舉例而言，導電凸塊220可為如所說明之經附接焊球，或經鍍覆柱。
圖12為根據一實施例之具有雙側RDL配置之封裝的橫截面側視圖說明。如所展示，封裝100包括具有第一內側111及第一外側109之第一RDL 110。第一晶粒130接合至第一RDL 110之第一內側111。第一晶粒130堆疊於第二晶粒140上。第二RDL 210直接地在第一RDL 110之下。第二RDL 210包括第二內側211及第二外側209。第二晶粒140接合至第二RDL 210之第二內側211。複數個導電柱120自第一RDL 110之第一內側111延伸至第二RDL 210之第二內側211。在所說明實施 例中，模製化合物150填充第一RDL 110之第一內側111與第二RDL 210之第二內側211之間的空間，且在該第一內側與該第二內側之間囊封複數個導電柱120、第一晶粒130、第二晶粒140，及一或多個組件180。如所說明，模製化合物150為填充第一RDL 110之第一內側111與第二RDL 210之第二內側211之間的空間且囊封導電柱120及晶粒130、135、140、145以及選用組件180的均一組合物之連續層。如所說明，模製化合物150橫向地環繞組件180、導電柱120及晶粒130、135、140、145中之每一者，且亦橫向地定位於鄰近晶粒之間。
根據實施例，複數個晶粒可接合至第一及第二RDL 110、210。舉例而言，在圖12所說明之實施例中，第三晶粒145接合至第二RDL 210之第二內側211，且第一晶粒130堆疊於第二晶粒140及第三晶粒145兩者上。在一實施例中，第四晶粒135接合至第一RDL 110之第一內側111，且第四晶粒135係(例如)運用晶粒附接膜而堆疊於第二晶粒140上。在所說明實施例中，晶粒130、135包括具有接合至第一RDL 110之接觸墊136之前側129，且晶粒140、145包括具有接合至第二RDL 210之接觸墊146之前側139。在一實施例中，晶粒130、135之背側131面對晶粒140、145之背側141。晶粒之背側可使用一或多個晶粒附接膜144而藉由堆疊而彼此附接。因此，在一實施例中，晶粒之背側不包括用於堆疊於彼此上之晶粒之間的直接電連接之接觸墊。因此，在一實施例中，晶粒不直接地電耦接至經堆疊有該等晶粒之晶粒，且堆疊式晶粒之間的任何電通信需要經由RDL 110、210及導電柱120之通信。
如本文中所使用，術語「堆疊於……上」可在上方或下方，且因此並不暗示特定定向。舉例而言，在圖12所說明之實施例中，第一晶粒130表現為堆疊於第二晶粒140及第三晶粒145上。在圖12係根據圖5所說明之處理序列予以製造的實施例中，第三晶粒145堆疊於第一晶 粒130上，而第二晶粒140堆疊於第一晶粒130上且堆疊於接合至第一RDL 110之第一內側111之第四晶粒135上。因此，術語「堆疊於……上」可在上方或下方，且並不暗示如在經堆疊有晶粒之物件上方或下方的特定定向。
根據實施例，多種不相似晶片可整合成封裝作為功能系統或子系統。在一實施例中，具有雙側RDL配置之封裝包括混合邏輯及記憶體晶粒。舉例而言，封裝100可包括ASIC及DRAM晶粒。在一特定實施例中，晶粒140為邏輯晶粒，諸如ASIC晶粒。在一實施例中，晶粒130、135為邏輯或記憶體(例如，DRAM)晶粒。在一實施例中，運用被動組件來替換晶粒145。舉例而言，可運用諸如矽電容器、電感器或整合式被動裝置(IPD)之被動組件來替換晶粒145。此被動組件145可藉由薄膜製程而形成。在一實施例中，被動組件145電容器之大部分厚度為矽。被動組件145可與組件180不同地被整合，其中相對於表面黏著於第一RDL 110上，被動組件145係運用熱增強膠帶或晶粒附接膜144而附接。組件可另外厚於被動組件145，且在電容器之狀況下，組件180可經設計為相較於被動組件145具有較高電容。應瞭解，特定晶粒組態為例示性的，且實施例可用於多種SiP配置。根據一些實施例，較高功率晶粒(例如，ASIC)緊鄰於第二RDL 210而定位於封裝之底部上(例如，作為晶粒140)。在此組態中，ASIC晶粒可被實體上定位成最靠近導電凸塊220。在其他實施例中，第一RDL 110結合系統層級而用作熱散播器。在此實施例中，較高功率晶粒(例如，ASIC)緊鄰於第一RDL 110而定位於封裝之頂部上(例如，作為晶粒130或135)。在此組態中，頂部第一RDL 110可用於針對較高功率晶粒之熱散播能力。
仍參看圖12，在一實施例中，一或多個晶粒130、135佔據大於晶粒140、145之區域A2及晶粒140之區域A3(其中A2及A3對應於第二 RDL 210上之經佔據區域)的區域A1(對應於第一RDL 110上之經佔據區域)。在所說明實施例中，A1>A2>A3。在一項態樣中，此可歸因於封裝100之形成期間之堆疊製程，其中與關於圖5所描述相似地將晶粒140、145堆疊至晶粒130、135上。
根據本文中所描述之實施例，在一些應用中，第一RDL 110可結合系統層級而另外充當熱散播器。在一些應用中，此可適合於散播晶粒130、135之熱，晶粒130、135相較於經堆疊有晶粒130、135之晶粒(例如，晶粒140、145)佔據較大區域。因此，根據實施例，可利用頂部第一RDL 110之熱散播能力，特別是隨著接合至頂部第一RDL 110之晶粒之區域增加。在第一RDL 110用於熱散播能力的情況下，可增加外部表面附近的第一RDL 110之外部金屬層(或重佈線)厚度(例如，厚於RDL 110內之其他金屬層)。
現在參看圖13，根據一實施例來說明封裝100變化。在圖13所說明之實施例中，視情況出於電磁干擾(EMI)屏蔽而添加一或若干額外金屬化層160。在一實施例中，圍繞模製化合物150之側邊緣形成金屬化層160。金屬化層160可另外跨越第一RDL 110之外側。
可另外出於與其他主動裝置或被動組件之互連而展開第一RDL 110之外側109。在圖14所說明之實施例中，熱散播器或罩蓋310視情況附接至第一RDL 110之外側109。舉例而言，熱散播器或罩蓋310可運用(例如)熱界面材料或晶粒附接膜302而附接。在圖15所說明之實施例中，藉由第一RDL 110之外側109上的額外組件180或晶粒或封裝410之接合而進一步按比例調整封裝100之整合。舉例而言，晶粒或封裝410可為額外邏輯裝置。以此方式，額外IC晶粒可緊密地定位至晶粒140(例如，ASIC)，且經由第一RDL 110、導電柱120及第二RDL 210而與晶粒140電連接。在所說明實施例中，晶粒410係運用導電凸塊420(諸如焊料凸塊)而附接至第一RDL 110。
在利用實施例之各種態樣時，對於熟習此項技術者而言將變得顯而易見，用於形成包括多個重佈層之扇出系統級封裝的以上實施例之組合或變化係可能的。儘管已用特定於結構特徵及/或方法動作之語言來描述實施例，但應理解，所附申請專利範圍未必限於所描述之特定特徵或動作。所揭示之特定特徵及動作代替地應被理解為有用於說明的申請專利範圍之實施例。
102‧‧‧載體基板
110‧‧‧第一重佈層(RDL)
120‧‧‧導電柱
130‧‧‧第一晶粒
139‧‧‧前側/前表面
140‧‧‧第二晶粒
141‧‧‧背側
144‧‧‧晶粒附接膜
146‧‧‧接觸墊
180‧‧‧組件

Claims (23)

  1. 一種封裝，其包含：一第一重佈層(RDL)，其包括一第一內側及第一外側；一第一晶粒，其接合至該第一RDL之該第一內側；一第二RDL，其在該第一RDL之下，該第二RDL包括一第二內側及第二外側；一第二晶粒，其接合至該第二RDL之該第二內側，其中該第一晶粒堆疊於該第二晶粒上，且該第一晶粒不與該第二晶粒直接地電耦接；複數個導電柱，其自該第一RDL之該第一內側延伸至該第二RDL之該第二內側；及一模製化合物，其定位於該第一RDL之該第一內側與該第二RDL之該第二內側之間，其中該模製化合物在該第一內側與該第二內側之間囊封該複數個導電柱、該第一晶粒及該第二晶粒。
  2. 如請求項1之封裝，其進一步包含在該第二RDL之該第二外側上之複數個導電凸塊。
  3. 如請求項1之封裝，其進一步包含接合至該第一RDL之該第一外側之一裝置。
  4. 如請求項3之封裝，其中該裝置係選自由以下各者組成之群組：一罩蓋、一熱散播器、一被動組件、一積體電路晶粒，及一封裝。
  5. 如請求項1之封裝，其中該模製化合物為在該第一RDL之該第一內側與該第二RDL之該第二內側之間且囊封該複數個該等導電柱、該第一晶粒及該第二晶粒的均一組合物之一連續層。
  6. 如請求項1之封裝，其中該第一晶粒係運用一晶粒附接膜或熱增 強膠帶而附接至該第二晶粒。
  7. 如請求項1之封裝，其中：該第一晶粒包括具有接觸墊之一前側及不包括接觸墊之一背側；該第二晶粒包括具有接觸墊之一前側及不包括接觸墊之一背側；且該第一晶粒之該前側接合至該第一RDL，且該第二晶粒之該前側接合至該第二RDL。
  8. 如請求項7之封裝，其中該第一晶粒之該背側面對該第二晶粒之該背側。
  9. 如請求項8之封裝，其中該第一晶粒之該背側係運用一晶粒附接膜而附接至該第二晶粒之該背側。
  10. 如請求項1之封裝，其進一步包含接合至該第二RDL之該第二內側之一第三晶粒，其中該第一晶粒堆疊於該第二晶粒及該第三晶粒上。
  11. 如請求項1之封裝，其進一步包含接合至該第一RDL之該第一內側之一第四晶粒，其中該第一晶粒及該第四晶粒附接至該第二晶粒，且該第一晶粒及該第四晶粒一起相較於該第二晶粒佔據一較大區域。
  12. 如請求項1之封裝，其中該第一晶粒包含一記憶體裝置，且該第二晶粒包含一邏輯裝置。
  13. 如請求項1之封裝，其中該第二RDL包括直接地在該第二晶粒之一接觸墊上之一重佈線。
  14. 如請求項1之封裝，其中該第一晶粒上之一導電凸塊接合至該第一RDL之一接觸墊。
  15. 如請求項14之封裝，其中選自由一非導電膏(NCP)及非導電膜 (NCF)組成之群組的一層橫向地環繞該導電凸塊。
  16. 如請求項14之封裝，其中一各向異性導電膜直接地在該第一晶粒上之該導電凸塊與該第一RDL之該接觸墊之間。
  17. 如請求項1之封裝，其進一步包含接合至該第一RDL之該第一內側之一被動組件。
  18. 如請求項17之封裝，其中該被動組件接合至該第二RDL之該第二內側。
  19. 如請求項18之封裝，其中該被動組件被整合為該複數個導電柱之一圖案之一部分。
  20. 一種形成一扇出系統級封裝之方法：在一載體基板上形成一第一重佈層(RDL)；在該第一RDL上形成複數個導電柱；在該複數個導電柱之一周界內部將一第一晶粒附接至該第一RDL；在該第一晶粒上堆疊一第二晶粒；將該第二晶粒、該第一晶粒及該複數個導電柱囊封於一模製化合物中；及在該模製化合物、該第二晶粒及該複數個導電柱上形成一第二RDL。
  21. 如請求項20之方法，其進一步包含在將該第二晶粒、該第一晶粒及該複數個導電柱囊封於該模製化合物中之後及在形成該第二RDL之前縮減該模製化合物及該複數個導電柱之一厚度。
  22. 如請求項20之方法，其進一步包含在形成該第二RDL之前在該模製化合物中形成開口以曝露該第二晶粒上之裝載墊。
  23. 如請求項20之方法，其進一步包含在將該第二晶粒、該第一晶粒及該複數個導電柱囊封於該模製化合物中之後及在形成該第 二RDL之前自該第二晶粒移除一保護膜以曝露該第二晶粒上之裝載墊。
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