TW201635398A - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TW201635398A
TW201635398A TW104144135A TW104144135A TW201635398A TW 201635398 A TW201635398 A TW 201635398A TW 104144135 A TW104144135 A TW 104144135A TW 104144135 A TW104144135 A TW 104144135A TW 201635398 A TW201635398 A TW 201635398A
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Taiwan
Prior art keywords
jig
semiconductor wafer
wafer
semiconductor
semiconductor device
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TW104144135A
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English (en)
Inventor
沖嶋和彥
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瑞薩電子股份有限公司
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Publication of TW201635398A publication Critical patent/TW201635398A/zh

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Abstract

本發明旨在使半導體裝置的可靠度提高。依本發明的半導體裝置之製造方法，包含以下步驟：在塗佈於晶片焊墊1c之焊料6呈熔融狀態下，將矯正夾具9ga抵靠於半導體晶片2之主面2a，其後，使焊料6硬化之步驟；以及，使矯正夾具9ga從半導體晶片2脫離，而將半導體晶片2搭載於晶片焊墊1c上之步驟。矯正夾具9ga，具備：第1部分9gb，該第1部分9gb具有第1面9gc，該第1面9gc係與支持構件9h之支持面9ha平行，該支持構件9h支持晶片焊墊1c；以及第2部分9ge，其具有與第1面9gc交叉之第2面9gf；矯正時，將矯正夾具9ga之第1面9gc抵靠在半導體晶片2的主面2a，且在將矯正夾具9ga的第2部分9ge抵靠於引線框架7的狀態下，使焊料6硬化。

Description

半導體裝置之製造方法
本發明係關於半導體裝置之製造方法，例如，本發明係關於適用於「將半導體晶片藉由焊料(接合材料)搭載於晶片搭載部之半導體裝置」的有效技術。
在使用焊料作為接合半導體晶片的晶片黏合材料之半導體裝置中，於其組裝之固晶步驟，將引線框架投入達到焊料的融點以上之高溫平台而進行加熱，並進而將焊料供給至引線框架的晶片搭載部，而使其熔融。
接著，將半導體晶片配置於熔融狀態的焊料上，而對於半導體晶片賦予既定之固晶負重。進而，藉由在焊料熔融之狀態下將焊料開放、冷卻，使焊料固化而接合半導體晶片。
此外，使用夾具將半導體晶片或半導體元件搭載於引線框架或基板之技術，係揭露於例如日本特公平6-82697號公報(專利文獻1)、日本特開2000-349099號公報(專利文獻2)及日本特開2013-197146號公報(專利文獻3)。 [先前技術文獻] [專利文獻]
[專利文獻1] 日本特公平6-82697號公報 [專利文獻2] 日本特開2000-349099號公報 [專利文獻3] 日本特開2013-197146號公報
[發明所欲解決之問題] 在上述半導體裝置的組裝中，由於焊料對於引線框架之晶片搭載部或是半導體晶片之濡溼性、或是焊料的供給位置之差異、或是晶片搭載位置的差異等，晶片下之焊料的量會變動，而造成半導體晶片在對於其厚度方向傾斜之狀態下受到搭載。
若半導體晶片傾斜而受到搭載，則半導體裝置之導電特性、散熱特性、引線接合性及耐衝擊量之差異會變大，而為半導體裝置的可靠度品質不安定地下降之課題。
其它的課題與新穎特徵，可從本說明書之記載及附加圖式理解。 [解決問題之方式]
依本發明一實施態樣之半導體裝置之製造方法，包含以下步驟：(a)於引線框架之晶片搭載部塗佈接合材料之步驟，(b)於上述接合材料上配置半導體晶片之步驟，(c)在上述接合材料為熔融之狀態下將夾具抵靠於上述半導體晶片，其後，使上述接合材料硬化之步驟，(d)使上述夾具從上述半導體晶片脫離，而將上述半導體晶片搭載於上述晶片搭載部上之步驟。進而，上述夾具，具備：第1部分，其具有與支持上述晶片搭載部之支持構件的支持面平行的面，亦即第1面；以及第2部分，其具有與上述第1面交叉的面，亦即第2面；於上述(c)步驟，在「將上述夾具之上述第1部分的上述第1面」抵靠於「上述半導體晶片的頂面」，且「將上述夾具之上述第2部分」抵靠於「上述引線框架」之狀態下，使上述接合材料硬化。
又，依本發明一實施態樣之另一半導體裝置之製造方法，包含以下步驟：(a)準備組裝體之步驟，該組裝體係將半導體晶片藉由焊錫膏配置於引線框架之晶片搭載部而成，(b)在將夾具抵靠於上述半導體晶片的頂面之狀態下，將上述組裝體通過回焊爐而將上述焊錫膏熔融之步驟。進而，包含以下步驟：(c)將上述組裝體從上述回焊爐取出，而使上述焊錫膏硬化之步驟，(d)自上述半導體晶片使上述夾具脫離而藉由焊料將上述半導體晶片搭載於上述晶片搭載部上之步驟。又，上述夾具，具備：第1部分，其具有與支持上述晶片搭載部之支持構件的支持面平行的面，亦即第1面；以及第2部分，其具有與上述第1面交叉的面，亦即第2面；於上述(b)步驟，在將「上述夾具之上述第1部分的上述第1面」抵靠於「上述半導體晶片之上述頂面」，且將「上述夾具之上述第2部分」抵靠於「上述引線框架」之狀態下，使上述焊錫膏硬化。 [發明之效果]
依上述一實施態樣，可使半導體裝置的可靠度提高。
以下實施形態中，除了特別必要時以外，原則上不重複同一或相同部分的說明。
進一步，以下實施形態中，為方便起見，在必要時雖分割為複數段落或實施形態予以說明，但除了特別明示的情況以外，該等說明內容並非互相無關，另一方面，其他一部分或全部的變形例，具有詳細說明、補充說明等關係。
此外，以下實施形態中，在提及要件之數目等（包含個數、數值、量、範圍等）的情況，除了特別明示的情況及原理上明顯限定為特定數目的情況等以外，並未限定為該特定數目，可為特定數目以上或以下。
又，以下實施形態中，其構成要件（亦包含要件步驟等），除了特別明示的情況及被認為是原理上明顯為必須的情況等以外，自然不必非得為必須之要件。
此外，以下實施形態中，關於構成要件等，提及「由A構成」、「藉由A形成」、「具有A」、「包含A」時，除了特別明示僅為該要件之意的情況等以外，自然並未排除其以外之要件。同樣地，以下實施形態中，在提及構成要件等之形狀、位置關係等時，除了特別明示的情況及被認為是原理上明顯並非為此的情況等以外，包含實質上近似或類似該形狀等之形狀。此一情形，對上述數值及範圍等亦相同。
以下，依據附圖對實施形態詳細地說明。此外，在用於說明實施形態之全部附圖中，對具有同一功能之構件賦予同一符號，並省略其重複說明。此外，為使附圖容易理解，有對俯視圖附加影線之情況。
(實施態樣1) 圖1為表示實施態樣1之半導體裝置的構造之一例的俯視圖，圖2為將圖1所示之半導體裝置的內部構造穿透密封體表示之俯視圖，圖3為表示沿圖2之A-A線切斷的構造之一例的剖面圖。
＜半導體裝置＞ 圖1～圖3所示之本實施態樣1的半導體裝置為半導體封裝5；該半導體封裝5具備密封體3，進而，具有複數引線1；該密封體3，將半導體晶片(亦稱為晶粒)2密封，且由絕緣性之樹脂組成；該等複數引線1，係位於密封體3的內部及外部。此外，複數引線1，分別具有以密封體3覆蓋之內引線部1a，與自密封體3向外部露出(突出)之外引線部1b；複數外引線部1b，分別為半導體裝置之外部連接用端子(外部端子)。
接著，本實施態樣1之半導體封裝5，係如圖1及圖3所示，從密封體3之複數側面3a之中對向的1組側面3a，分別突出有複數外引線部1b。
又，如圖3所示，板狀的晶片焊墊(亦稱為晶片搭載部、島部(island)、頭部(header)或突部(tab))1c以其頂面(晶片搭載面)1ca支持半導體晶片2，而其底面1cb係自密封體3的底面3b露出。亦即，本實施態樣1之半導體封裝5，係面安裝型之半導體裝置。
此外，本實施態樣1中，係採取功率電晶體(功率裝置)作為具備了上述構造之半導體封裝5的一例而加以說明。接著，由於為功率電晶體，係內建有形成了具有汲極(D)電極、源極(S)電極、及閘極(G)電極的場效電晶體之半導體晶片2。
從而，由於在半導體晶片2的背面2b形成有電極(汲極電極)，使得源自半導體晶片2的發熱量亦多，故使用焊料(接合材料)6作為晶片黏合材料，以使半導體晶片2的背面2b側變成散熱路徑。亦即，為使半導體晶片2藉由焊料6搭載於晶片焊墊1c上，並進而藉由焊料6從晶片焊墊1c進行散熱，晶片焊墊1c的底面1cb係露出密封體3的底面3b。
若針對半導體封裝5之詳細構造進行說明，其具有：晶片焊墊1c，具備如圖3所示之頂面1ca，及與頂面1ca相反側的底面1cb；以及半導體晶片2，藉由晶片黏合材料亦即焊料6，搭載於晶片焊墊1c之頂面1ca。此半導體晶片2，具有：主面(頂面)2a、形成於主面2a之複數電極焊墊(搭接電極、搭接焊墊)2c、以及與主面2a相反側的背面2b；背面2b係以與晶片焊墊1c的頂面1ca對向之方式，搭載於晶片焊墊1c上。此外，半導體晶片2的背面2b亦為電極焊墊(搭接電極、搭接焊墊)2d，成為汲極電極。
又，如圖2及圖3所示，半導體晶片2之主面2a的複數電極焊墊2c，與複數引線1之內引線部1a，係藉由複數引線(導電性構件)4分別電性地連接。
此外，在形成於半導體晶片2之主面2a的複數電極焊墊2c，包含有源極電極與閘極電極。
又，密封體3係以「晶片焊墊1c的底面1cb」露出「密封體3的底面3b」之方式形成，並密封著晶片焊墊1c的一部分(圖3所示之頂面1ca側)、複數內引線部1a、半導體晶片2及複數引線4。
又，複數外引線部1b，分別與內引線部1a一體形成。
此外，晶片焊墊1c，以及包含內引線部1a與外引線部1b之複數引線1，例如係由以銅(Cu)為主成分之銅合金構成。又，晶片黏合材料為焊料6，而上述焊料6，較佳為使用了例如錫(Sn)等之無鉛(Pb)焊料。惟，亦可使用Sn-Pb系焊料等。
又，引線4，例如係由鋁(Al)或銅等構成。進而，密封體3，例如係由熱硬化性之環氧樹脂構成。惟，上述各構件之材料，並不限定於上述提及者。
＜半導體裝置之製造方法＞ 圖4為表示圖1所示之半導體裝置的組裝順序之一例的流程圖，圖5為表示在實施態樣1之半導體裝置的組裝中使用的引線框架之構造的一例之俯視圖，圖6為表示圖5之A部分的構造之一例的部分放大俯視圖，圖7為表示沿圖6之A-A線切斷的構造之一例的部分剖面圖。又，圖8為表示實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖，圖9為表示沿圖8之A-A線切斷的構造之一例的部分剖面圖。
依圖4所示之流程，就半導體封裝5的製造方法加以說明。
首先，藉由圖4所示之晶圓背面磨削，切削半導體晶圓的背面，而以既定之厚度形成半導體晶圓。
接著，進行切割而切斷半導體晶圓，並自半導體晶圓取得複數良品之半導體晶片2。
接著，進行晶粒黏著。首先，準備如圖5所示般具有複數裝置區域(半導體裝置形成區域)7a之引線框架7。本實施態樣1中，採用「複數裝置區域7a係以矩陣配列形成之引線框架7」的情形，加以說明。此外，引線框架7，例如係由以Cu(銅)作為主成分之金屬材料(Cu合金)製成之板狀的框架構件。
又，本實施態樣1中，如圖6所示，為了方便，以12個裝置區域7a(參照圖5)為代表，舉例說明以下半導體封裝5之組裝。如圖6及圖7所示，在上述各裝置區域7a，形成有：晶片焊墊1c；及在其周圍分別由如圖2所示之內引線部1a與外引線部1b構成之複數引線1。
進而，在各裝置區域7a的周圍，形成框部7b；在引線框架7之幅寬方向的兩端部，形成在搬運等或是定位等場合使用之複數貫通孔7c。
1．晶粒黏著 引線框架準備完成後，進行圖4所示之晶粒黏著。
晶粒黏著步驟中，如圖8及圖9所示，首先，在引線框架7各別之裝置區域7a的晶片焊墊1c，塗佈(供給)接合材料(晶片黏合材料)亦即焊料6。
在此，針對在本實施態樣1中使用的固晶裝置加以說明。圖10為表示在實施態樣1之半導體裝置的組裝中使用的固晶裝置之構造的一例之構成方塊圖。
若針對圖10所示之固晶裝置9的構成加以說明，其具備：框架供給部9a，用以供給進行固晶處理之引線框架7；晶圓供給部9b，用以供給切割完畢的半導體晶圓；以及框架收納部9c，用以收納固晶處理後的引線框架7。
進而，在固晶裝置9，設置有：焊料供給部9d，向引線框架7供給焊料6；焊料擴張部9e，將框架上的焊料6擴張；固晶部9f，在塗佈於框架之焊料6上，載置半導體晶片2；及矯正部9g，矯正載置於焊料6上之半導體晶片2的傾斜。
亦即，固晶裝置9係進行以下處理之一貫處理裝置：於處理部內形成還原之環境氣體，於此還原之環境氣體內，從切割完畢的半導體晶圓，拾取半導體晶片2，接著，直到將半導體晶片2固晶至引線框架7的晶片焊墊1c上為止之處理。
首先，將引線框架7從框架供給部9a搬出到焊料供給部9d。在焊料供給部9d，將引線框架7加熱到期望的溫度(焊料6熔融之溫度)。接著，如圖8及圖9所示，在引線框架7的複數「圖5所示的裝置區域7a」之各自(例如，對於圖5所示之搬運方向B之每1列)的晶片焊墊1c的頂面1ca，塗佈(供給)焊料6。塗佈之焊料6，藉由晶片焊墊1c加熱而熔融。
接著，參照圖11～圖16針對各處理加以說明。圖11為表示在實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖，圖12為表示沿圖11之A-A線切斷的構造之一例的部分剖面圖，圖13為表示實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖。又，圖14為表示沿圖13之A-A線切斷的構造之一例的部分剖面圖，圖15為表示實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖，圖16為表示沿圖15之A-A線切斷的構造之一例的部分剖面圖。
首先，如圖10～圖12所示，將熔融後之焊料6於焊料擴張部9e擴張。亦即，藉由拍擊部(spanker)9ea將焊料6按壓擴張。此時，將焊料6按壓擴張為與圖3所示之半導體晶片2的背面2b相同的四角形(圖11)。
接著，於圖10所示的固晶部9f，如圖13及圖14所示，在各別之焊料6上配置半導體晶片2。此時，從圖10所示的晶圓供給部9b中切割完畢的半導體晶圓，藉由固晶頭9fa，利用真空吸附等拾取半導體晶片2，並將此半導體晶片2配置(載置)於「配置在固晶部9f的引線框架7」之晶片焊墊1c上的焊料6上。此外，焊料6此時為熔融狀態。
接著，於圖10所示之矯正部9g，矯正配置於焊料6上的半導體晶片2之傾斜。亦即，在焊料6為熔融之狀態下，如圖15及圖16所示，將矯正夾具9ga抵靠於半導體晶片2的主面(頂面)2a，以矯正半導體晶片2之傾斜。
本實施態樣1之固晶裝置9中，於固晶部9f的後段設有矯正部9g。藉此，由於在固晶頭9fa的後段配置矯正夾具9ga，故能不造成「增加新步驟」或是「生產量(亦稱作生產率)下降」地進行矯正處理。
在此，針對晶粒黏著步驟中半導體晶片2傾斜搭載的課題，詳細說明其機制。圖17為表示藉由比較例的晶粒黏著進行之半導體晶片的傾斜配置構造之側面圖。
如圖17所示，供給之焊料6，藉由加熱之晶片焊墊1c而熔融，並於此熔融狀態的焊料6上，配置半導體晶片2。在藉由圖10所示的固晶頭9fa於焊料6上配置半導體晶片2後，即刻藉由固晶頭9fa賦予半導體晶片2如圖17所示之既定負重C。其後，固晶頭9fa退避。
接著，藉由晶片焊墊1c之加熱，切換為冷卻。此時，由於焊料塗佈的差異或焊料量的差異等，半導體晶片2會產生傾斜。此傾斜，會引起半導體裝置之電特性的差異、散熱特性的差異、衝擊耐量的差異(焊料厚度的差異)或是引線接合性的差異，而使半導體裝置的可靠度下降。
接著，針對使用焊料6作為晶片黏合材料(接合材料)時，半導體晶片2易傾斜的理由加以說明。其係受到「焊料6之觸變性(或稱為「搖溶性」)低」的影響。上述觸變性係僅在施力於物體(流動體)期間流動性高，若釋放則流動性就變低之性質；由於焊料6其觸變性低，故若在熔融狀態下固晶頭9fa退避，則其受到釋放而有移動之傾向。此為引起半導體晶片2傾斜之原因。
相對於此，例如，銀膠等晶片黏合材料，由於上述觸變性高，即便固晶頭9fa退避而釋開後，亦不會有移動之傾向。亦即，半導體晶片2不易傾斜。
由以上機制，相較於銀膠等，在使用焊料6之情況，半導體晶片2容易傾斜。
在此，本實施態樣1中，藉由在焊料6熔融之狀態下，將矯正夾具9ga抵靠於半導體晶片2的主面(頂面)2a，而在抵靠此矯正夾具9ga之狀態下，使焊料6的溫度下降而使焊料6硬化(固化)(將矯正夾具9ga抵靠直到比固相溫度更低的溫度為止)，以矯正半導體晶片2的傾斜。
在此，針對本實施態樣1中使用的矯正夾具9ga之形狀加以說明。圖18係以部分剖面表示藉由實施態樣1之晶粒黏著步驟中的矯正夾具進行之抵靠狀態的一例之側面圖，圖19係以部分剖面表示藉由實施態樣1之晶粒黏著步驟中的矯正夾具進行之抵靠狀態的一例之側面圖。進而，圖20為表示藉由實施態樣1的晶粒黏著步驟中之矯正夾具進行之抵靠的時點之一例的曲線圖，圖21為表示藉由實施態樣1的晶粒黏著步驟中之矯正夾具進行之抵靠處的一例之部分俯視圖及立體圖。
如圖18及圖19所示，矯正夾具9ga，具備：第1部分9gb，其具有第1面9gc，亦即與可支持晶片焊墊1c之支持構件9h的支持面9ha略呈平行的面；及第2部分9ge，其具有第2面9gf，亦即與第1面9gc交叉的面。
此外，支持晶片焊墊1c的支持構件9h例如為平台；支持面9ha為平台的頂面。又，支持構件9h亦可為軌道等。
接著，矯正夾具9ga的第1部分9gb之第1面9gc，係與上述支持構件9h的支持面9ha略呈平行的面，並為接觸半導體晶片2的主面(頂面)2a的面。換言之，第1面9gc，係與半導體晶片2的主面(頂面)2a對向的面。又，具有「與第1面9gc略呈直角交叉之第2面9gf」的第2部分9ge，為木屐部分。亦即，本實施態樣1之矯正夾具9ga，係朝向如圖18所示的按壓方向D(第1方向)形成開口之匚字狀或木屐狀的區塊構件。
藉此，在矯正半導體晶片2的傾斜時，如圖19所示，將「矯正夾具9ga的第1部分9gb之第1面9gc」抵靠於「熔融之焊料6上的半導體晶片2之主面2a」，以矯正半導體晶片2的傾斜。
此外，矯正夾具9ga的第2部分9ge之第2面9gf在按壓方向D上的高度H，係預先形成為與「半導體晶片2的厚度」及「半導體封裝5組裝完成後之焊料6的厚度」的合計相等。
接著，在矯正時，將矯正夾具9ga的第1面9gc抵靠於半導體晶片2的主面2a的同時，將矯正夾具9ga的第2部分9ge之底面9gg抵靠於引線框架7，並在此狀態下使焊料6硬化。
藉此，即便矯正時矯正夾具9ga之下降位置的精度非為高精度的情況下，藉由將矯正夾具9ga之第2部分9ge(木屐部分)接觸(抵靠)引線框架7，能以高精度決定「包含了焊料6之半導體晶片2的高度」；其結果，藉由以高精度定位出半導體晶片2之主面2a的高度，可矯正半導體晶片2之傾斜。
又，由於矯正夾具9ga係「由其兩側之第2部分9ge(木屐部分)接觸引線框架7」之構造，即便引線框架7因熱而翹曲，亦不損其矯正力。
又，矯正時，對於熔融狀態的焊料6，在比焊料6的固相溫度更高的溫度之時點，將矯正夾具9ga抵靠於半導體晶片2，此時，將矯正夾具9ga抵靠於半導體晶片2，直到焊料6的溫度變得比該固相溫度低為止，其後，使矯正夾具9ga自半導體晶片2脫離。
具體而言，如圖20所示，焊料6在比其固相溫度(T1：固相線)更高的溫度之時點(T2：焊料6為熔融之狀態)開始冷卻，在冷卻開始後立即將矯正夾具9ga抵靠於半導體晶片2的主面2a(矯正開始之點P1)，藉此，半導體晶片2的熱傳導至矯正夾具9ga，使半導體晶片2的溫度下降。進而，由於半導體晶片2的溫度下降，焊料6的溫度也隨之下降。
接著，直到焊料6的溫度低於固相溫度T1為止，事先抵靠好矯正夾具9ga，而在溫度確實低於固相溫度T1而焊料6硬化的時點(矯正夾具脫離點P2)或是硬化後，使矯正夾具9ga自半導體晶片2脫離。
亦即，於本實施態樣1之矯正中，當在塗佈於晶片焊墊1c，且熔融之焊料6上載置了半導體晶片2後，在焊料6熔融之狀態，開始冷卻；冷卻開始後，即刻在僅比固相線(固相溫度)些微高出的溫度點(P1)，將與平台等支持構件9h的支持面9ha呈略平行固持的矯正夾具9ga之第1部分9gb的第1面9gc，抵靠於半導體晶片2的主面2a。
藉此，矯正半導體晶片2的傾斜，且由於半導體晶片2被矯正夾具9ga奪取熱量而溫度下降，焊料6的溫度也隨之下降。接著，若焊料6的溫度低於固相溫度(固相線)，則焊料6會硬化。由於至此時點為止，將矯正夾具9ga抵靠於半導體晶片2的主面2a，故焊料6在不傾斜於半導體晶片2的主面2a之狀態下硬化而搭載半導體晶片2。
硬化後，從半導體晶片2的主面2a使矯正夾具9ga脫離(P2)。
作為一例，當焊料6為Sn-37Pb焊料之情形，固相溫度T1為183℃，從而，在固相溫度T1＋5℃～20℃左右之時點(T2)開始矯正，亦即，將矯正夾具9ga抵靠於半導體晶片2的主面2a。接著，直到焊料6的溫度低於固相溫度T1為止，在大約時間Q的期間，將矯正夾具9ga抵靠。從P1到P2之時間Q，為數秒間左右。
此外，由於在本實施態樣1的矯正中，加熱後之焊料6的熱量，經由半導體晶片2而被矯正夾具9ga奪取，故矯正夾具9ga較佳為具備冷卻機構。亦即，由於矯正夾具9ga每次在進行矯正時亦受到加熱，藉由在矯正夾具9ga設置冷卻機構，可承受固晶裝置9連續運轉。
在本實施態樣1的矯正中，如圖18所示，於矯正夾具9ga，連接冷卻此矯正夾具9ga之冷卻部8，從冷卻部8藉由空冷或是水冷，適當地將冷卻媒體供給至矯正夾具9ga。在矯正夾具9ga，設有使此冷卻媒體循環之冷卻機構。
又，矯正時，如圖21所示，將矯正夾具9ga的第2部分9ge，抵靠於引線框架7中之圖5所示的裝置區域(半導體裝置形成區域)7a的外側處。亦即，將矯正夾具9ga的第2部分9ge(木屐部分)，抵靠於引線框架7中之上述裝置區域7a的外側處(圖21之E部(影線部))。
藉此，由於矯正夾具9ga不會接觸引線框架7的製品區域，故可避免因矯正夾具9ga接觸引線框架7的製品區域而造成之損傷。
又，矯正時，如圖21所示，較佳為將矯正夾具9ga同時抵靠於複數半導體晶片2各別之主面2a(參照圖3)。亦即，藉由將一個矯正夾具9ga抵靠於整合數量(例如，四個左右)之半導體晶片2，能效率良好地進行矯正處理。
此外，當將矯正夾具9ga對於複數半導體晶片2同時抵靠時，較佳為將矯正夾具9ga同時抵靠於配置在與引線框架7之搬運方向B(X方向)交叉的方向(Y方向)之每一列的複數半導體晶片2各自之主面2a。
其原因在於，如圖10所示的固晶裝置9中，若對於圖21之引線框架7的搬運方向B(X方向)逐列進行既定的處理(焊料供給、焊料擴張、固晶及矯正)，並逐列(於每個裝置區域7a)進行矯正，則會造成於相同Y方向之1列內，矯正完畢的裝置區域7a之焊料6在下一個裝置區域7a矯正時再度熔融。
從而，藉由將矯正夾具9ga同時抵靠於配置在Y方向(與搬運方向B交叉的方向)之每一列的複數半導體晶片2各自之主面2a上，能效率良好且不會使前段之矯正白費地進行矯正處理。
藉由以上方法，可藉由焊料6矯正半導體晶片2之傾斜同時將半導體晶片2搭載於矩陣配列之引線框架7的各裝置區域7a之晶片焊墊1c的頂面1ca上。
接著，圖22為表示實施態樣1之半導體裝置的組裝中之引線接合步驟之一例的部分俯視圖，圖23為表示沿圖22之A-A線切斷之構造的一例之部分剖面圖，圖24為表示實施態樣1之半導體裝置的組裝中之封模密封步驟之一例的部分俯視圖。又，圖25為表示沿圖24之A-A線切斷之構造的一例之部分剖面圖，圖26為表示實施態樣1之半導體裝置的組裝中之個片化步驟之一例的部分俯視圖，圖27為表示沿圖26之A-A線切斷之構造的一例之部分剖面圖。
2．引線接合 晶粒黏著完成後，進行圖4所示之引線接合。
在本引線接合步驟中，如圖22及圖23所示，藉由複數引線4，將半導體晶片2之複數電極焊墊(參照圖3)2c，與複數內引線部1a(參照圖3)，分別電性地連接。
3．組裝後外觀檢查 引線接合完成後，進行圖4所示之「組裝後外觀檢查」。在此，進行引線4有無剝離等之外觀檢查。
4．封模密封 「組裝後外觀檢查」完成後，進行圖4所示之封模密封。
在封模密封步驟，使用密封用樹脂，如圖24及圖25所示，形成密封體3，用以將「上述各裝置區域7a之半導體晶片2、複數引線4及複數上述內引線部1a」密封。
在本實施態樣1之封模密封，如圖3所示，係以「晶片焊墊1c的底面1cb從密封體3的底面3b露出」之方式，形成密封體3。上述密封用樹脂，例如為熱硬化性之環氧樹脂。
5．電鍍 封模密封後，進行圖4所示之電鍍。
在電鍍步驟，將鍍焊料等電鍍膜，形成於圖3所示之複數外引線部1b、及晶片焊墊1c的底面1cb。
6．標記 電鍍後，實施圖4所示之標記。
在標記步驟，例如在密封體3的表面，形成期望的標記(印記)。上述標記例如為製品的種類或型號等，進行雷射照射等而形成上述標記。
7．引線加工(個片化) 標記後，進行圖4所示之引線加工。
在引線加工步驟，在上述各個裝置區域7a，藉由沖壓進行個片化。亦即，如圖26及圖27所示，於上述各裝置區域7a之F區域，將「圖2所示之各複數外引線部1b」及「圖5所示之框部7b」藉由沖壓切斷分離，同時，將各外引線部1b彎曲形成既定之形狀(在此，為鷗翼狀)。
藉由以上步驟，完成半導體封裝5之組裝。
接著，如圖4所示，進行煲機測試、最終外觀檢查、包裝，然後出貨。
依本實施態樣之半導體裝置(半導體封裝5)的製造方法，由於可降低晶粒黏著步驟中半導體晶片2的傾斜，故可降低因晶片傾斜造成之熱阻抗不良、接通電阻不良。
亦即，可減少因半導體晶片2傾斜搭載而造成半導體封裝5的「電特性、散熱特性、引線接合性、耐衝擊量」的差異，而可實現半導體封裝5之品質的安定化。其結果，可使半導體封裝5的可靠度提高。
又，可降低由於半導體晶片2傾斜造成引線接合時識別錯誤，而能使可焊性(引線接合性)提高。
又，藉由在矯正夾具9ga設置作為第2部分9ge之木屐部，以在矯正時使此第2部分9ge的前端(底面9gg)接觸引線框架7。藉此，在固晶裝置9內，當引線框架7之高溫加熱時，即便引線框架7產生翹曲，亦可進行矯正。
又，在引線框架7為矩陣配列之情形，藉由將與其搬運方向B交叉的方向上的一整列份(一循環份)同時矯正，可不使其再熔融，而效率良好地進行矯正處理。藉此，可提高半導體封裝5的生產性。
又，於固晶裝置9，藉由在固晶部9f的後段設置矯正部9g，可不投資新裝置，且不使生產量(率)下降地進行矯正處理及晶粒黏著處理。
＜變形例＞ 圖28為以部分剖面表示實施態樣1的變形例之矯正夾具的構造之側面圖。
於圖28所示之矯正夾具9ga，在其第1部分9gb的第1面9gc，形成有凹部9gd。凹部9gd，係向與按壓方向D相反的方向(第2方向)凹陷的部分，在矯正時，將矯正夾具9ga的第1面9gc之凹部9gd以外的部分(例如，凹部9gd周圍的部分(第3部分))，抵靠於半導體晶片2的主面2a。
如此，藉由在矯正夾具9ga中接觸半導體晶片2的第1面9gc形成凹部9gd，可減少矯正時「矯正夾具9ga」與「半導體晶片2之主面2a」的接觸面積，亦可降低矯正時，半導體晶片2產生污漬或是半導體晶片2受損之情事。
惟，為了不損及藉由半導體晶片2向矯正夾具9ga傳熱(矯正時焊料6的硬化)，需要考慮凹部9gd的大小或位置等。
又，如圖28所示，為使矯正夾具9ga按壓抵靠半導體晶片2，亦可設置作為彈性構件之簧片10。藉由此簧片10，在矯正時，矯正夾具9ga總是成為按壓抵靠半導體晶片2及引線框架7之狀態，可防止矯正夾具9ga從引線框架7浮起。
亦即，無需提高矯正夾具9ga之下降位置精度(例如亦可實現±1mm之位置精度)，而能以高精度定位半導體晶片2的高度。
(實施態樣2) 圖29為表示依實施態樣2的矯正夾具進行之抵靠處的一例之部分俯視圖及立體圖。
圖29所示之矯正，關於接合材料(晶片黏合材料)，以塗佈焊錫膏(膏狀的焊料6)之情形加以說明。亦即，在採用焊錫膏之情形，不使用圖10所示般的固晶裝置9，藉由將組裝體7d通過回焊爐(回焊裝置)，進行半導體晶片2之焊料接合。
首先，準備組裝體7d，該組裝體7d係將半導體晶片2藉由焊錫膏配置在引線框架7的晶片焊墊1c(參照圖19)而構成。其後，與實施態樣1之圖18及圖19同樣地，藉由在將矯正夾具11抵靠於半導體晶片2的主面2a之狀態下使組裝體7d通過回焊爐，以將上述焊錫膏熔融。接著，從上述回焊爐取出組裝體7d，使上述焊錫膏硬化，其後，使矯正夾具11從半導體晶片2脫離，而將半導體晶片2經由硬化之焊料6搭載於晶片焊墊1c上。
矯正夾具11係與實施態樣1之矯正夾具9ga相同。從而，在矯正時，與圖18及圖19同樣地，在「將矯正夾具11的第1部分9gb之第1面9gc抵靠於半導體晶片2的主面2a」且「將矯正夾具11的第2部分9ge抵靠於引線框架7」的狀態下，使上述焊錫膏硬化。
此外，回焊爐的情形下，可使用寬闊的矯正夾具11。
例如，在圖5所示使用由複數裝置區域(半導體裝置形成區域)7a以矩陣配列形成之引線框架7的情形，對於沿著與圖29所示的引線框架7之搬運方向B交叉的方向(Y方向)配置的每一列複數半導體晶片2，將矯正夾具11跨越複數列之該半導體晶片2而同時抵靠於各別之半導體晶片2的主面2a。
藉此，由於同時進行複數列半導體晶片2之矯正處理，可大幅提高矯正速度(生產量)。
如圖29所示，亦可同時使用三個「對於X方向逐列同時進行矯正之矯正夾具11a」，相對於此，亦可使用「將對於X方向3列份藉由一個矯正夾具11b同時進行矯正」之「寬闊的矯正夾具11b」。
在使用了「將X方向的3列份藉由一個矯正夾具11b同時進行矯正」之「寬闊的矯正夾具11b」的情形，可大幅提高矯正之處理速度。
另一方面，在使用了「於X方向逐列同時進行矯正之矯正夾具11a」的情形，由於夾具本身的翹曲小，可更為提高矯正的精度。
以上，雖將由本發明者完成之發明基於實施態樣具體說明，然而，本發明並不限定於上述記載之實施態樣，只要在不超出其宗旨的範圍內，亦可做各種變更。
例如，雖然上述實施態樣1、2中，係以固定半導體晶片2之接合材料(晶片黏合材料)為焊料6之情形加以說明，然而，上述接合材料，只要與焊料6具有同樣特性，亦可為焊料6以外的接合材料。
1‧‧‧引線
1a‧‧‧內引線部
1b‧‧‧外引線部
1c‧‧‧晶片焊墊(晶片搭載部)
1ca‧‧‧頂面
1cb‧‧‧底面
2‧‧‧半導體晶片(晶粒)
2a‧‧‧主面(頂面)
2b‧‧‧背面
2c‧‧‧電極焊墊
3‧‧‧密封體
3a‧‧‧側面
3b‧‧‧底面
4‧‧‧引線
5‧‧‧半導體封裝(半導體裝置)
6‧‧‧焊料(接合材料，焊錫膏)
7‧‧‧引線框架
7a‧‧‧裝置區域(半導體裝置形成區域)
7b‧‧‧框部
7c‧‧‧貫通孔
8‧‧‧冷卻部
9a‧‧‧框架供給部
9b‧‧‧晶圓供給部
9c‧‧‧框架收納部
9d‧‧‧焊料供給部
9e‧‧‧焊料擴張部
9ea‧‧‧拍擊部
9f‧‧‧固晶部
9fa‧‧‧固晶頭
9g‧‧‧矯正部
9ga‧‧‧矯正夾具
9gb‧‧‧第1部分
9gc‧‧‧第1面
9ge‧‧‧第2部分
9gf‧‧‧第2面
9gg‧‧‧底面
9h‧‧‧支持構件
9ha‧‧‧支持面
A‧‧‧圖5之A部分
B‧‧‧搬運方向
C‧‧‧負重
D‧‧‧按壓方向
E‧‧‧圖21之E部分(影線部)
H‧‧‧按壓方向D的高度
[圖1] 表示實施態樣1之半導體裝置的構造之一例的俯視圖。 [圖2] 將圖1所示之半導體裝置的內部構造穿透密封體表示之俯視圖。 [圖3] 表示沿圖2之A-A線切斷的構造之一例的剖面圖。 [圖4] 表示圖1所示之半導體裝置的組裝順序之一例的流程圖。 [圖5] 表示在實施態樣1之半導體裝置的組裝中使用的引線框架之構造的一例之俯視圖。 [圖6] 表示圖5之A部分的構造之一例的部分放大俯視圖。 [圖7] 表示沿圖6之A-A線切斷的構造之一例的部分剖面圖。 [圖8] 表示實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖。 [圖9] 表示沿圖8之A-A線切斷的構造之一例的部分剖面圖。 [圖10] 表示在實施態樣1之半導體裝置的組裝中使用的固晶裝置之構造的一例之構成方塊圖。 [圖11] 表示在實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖。 [圖12] 表示沿圖11之A-A線切斷的構造之一例的部分剖面圖。 [圖13] 表示實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖。 [圖14]表示沿圖13之A-A線切斷的構造之一例的部分剖面圖。 [圖15] 表示實施態樣1之半導體裝置的組裝中之晶粒黏著步驟之一例的部分俯視圖。 [圖16] 表示沿圖15之A-A線切斷的構造之一例的部分剖面圖。 [圖17] 表示藉由比較例的晶粒黏著進行之半導體晶片的傾斜配置構造之側面圖。 [圖18] 以部分剖面表示藉由實施態樣1之晶粒黏著步驟中的矯正夾具進行之抵靠狀態的一例之側面圖。 [圖19] 以部分剖面表示藉由實施態樣1之晶粒黏著步驟中的矯正夾具進行之抵靠狀態的一例之側面圖。 [圖20] 表示藉由實施態樣1的晶粒黏著步驟中之矯正夾具進行之抵靠的時點之一例的曲線圖。 [圖21] 表示藉由實施態樣1的晶粒黏著步驟中之矯正夾具進行之抵靠處的一例之部分俯視圖及立體圖。 [圖22] 表示實施態樣1之半導體裝置的組裝中之引線接合步驟之一例的部分俯視圖。 [圖23] 表示沿圖22之A-A線切斷之構造的一例之部分剖面圖。 [圖24] 表示實施態樣1之半導體裝置的組裝中之封模密封步驟之一例的部分俯視圖。 [圖25] 表示沿圖24之A-A線切斷之構造的一例之部分剖面圖。 [圖26] 表示實施態樣1之半導體裝置的組裝中之個片化步驟之一例的部分俯視圖。 [圖27] 表示沿圖26之A-A線切斷之構造的一例之部分剖面圖。 [圖28] 以部分剖面表示實施態樣1的變形例之矯正夾具的構造之側面圖。 [圖29] 表示依實施態樣2的矯正夾具進行之抵靠處的一例之部分俯視圖及立體圖。
1c‧‧‧晶片焊墊(晶片搭載部)
1ca‧‧‧頂面
2‧‧‧半導體晶片
2a‧‧‧主面
6‧‧‧焊料(接合材料、焊錫膏)
7‧‧‧引線框架
8‧‧‧冷卻部
9ga‧‧‧矯正夾具
9gb‧‧‧第1部分
9gc‧‧‧第1面
9ge‧‧‧第2部分
9gf‧‧‧第2面
9gg‧‧‧底面
9h‧‧‧支持構件
9ha‧‧‧支持面
D‧‧‧按壓方向
H‧‧‧按壓方向D的高度

Claims (12)

  1. 一種半導體裝置之製造方法，包含以下步驟： (a)、在引線框架的晶片搭載部塗佈接合材料之步驟； (b)、在該(a)步驟後，於該接合材料上配置半導體晶片之步驟； (c)、在該(b)步驟後，於該接合材料為熔融之狀態下，將夾具抵靠於該半導體晶片的頂面，其後，使該接合材料硬化之步驟；以及 (d)、在該(c)步驟後，使該夾具從該半導體晶片脫離，而將該半導體晶片藉由該接合材料搭載於該晶片搭載部上之步驟； 該夾具，具備：第1部分，其具有與支持該晶片搭載部之支持構件的支持面平行的面，亦即第1面；以及第2部分，其具有與該第1面交叉的面，亦即第2面； 於該(c)步驟，在將該夾具之該第1部分的該第1面抵靠於該半導體晶片之該頂面並且將該夾具之該第2部分抵靠於該引線框架的狀態下，使該接合材料硬化。
  2. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 該接合材料為焊料。
  3. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 在該(c)步驟，將該夾具同時抵靠於複數之該半導體晶片各自之該頂面。
  4. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 在該引線框架，以矩陣配列形成複數之半導體裝置形成區域； 在該(c)步驟，將該夾具同時抵靠於配置在與該引線框架的搬運方向交叉之方向的每一列複數之該半導體晶片各自之該頂面。
  5. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 於該夾具之該第1面形成凹部； 在該(c)步驟，將該夾具之該第1面的該凹部以外之部分，抵靠於該半導體晶片的該頂面。
  6. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 該夾具之該第2部分的該第2面在按壓方向之高度，係與該半導體晶片的厚度及該半導體裝置組裝完成後之該接合材料的厚度之合計相等。
  7. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 在該(c)步驟，將該夾具之該第2部分抵靠於該引線框架中之半導體裝置形成區域的外側處。
  8. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 在該(c)步驟，對於熔融狀態的該接合材料，在比該接合材料的固相溫度更高的溫度之時點，將該夾具抵靠於該半導體晶片。
  9. 如申請專利範圍第8項所述之半導體裝置之製造方法，其中， 在該(c)步驟，將該夾具抵靠於該半導體晶片，直到該接合材料的溫度變得比該固相溫度低為止，其後，在該(d)步驟使該夾具從該半導體晶片脫離。
  10. 如申請專利範圍第1項所述之半導體裝置之製造方法，其中， 在該夾具，連接有冷卻該夾具之冷卻部。
  11. 一種半導體裝置之製造方法，包含以下步驟： (a)、準備組裝體之步驟，該組裝體係將半導體晶片藉由焊錫膏配置於引線框架的晶片搭載部而構成； (b)、於該(a)步驟後，在將夾具抵靠於該半導體晶片的頂面之狀態下，將該組裝體通過回焊爐而將該焊錫膏熔融之步驟； (c)、於該(b)步驟後，從該回焊爐取出該組裝體而使該焊錫膏硬化之步驟；以及 (d)、於該(c)步驟後，使該夾具從該半導體晶片脫離，藉由焊料將該半導體晶片搭載於該晶片搭載部上之步驟； 該夾具，具備：第1部分，其具有與支持該晶片搭載部的支持構件之支持面平行的面，亦即第1面；以及第2部分，其具有與該第1面交叉的面，亦即第2面； 於該(b)步驟，在將該夾具之該第1部分的該第1面抵靠於該半導體晶片的該頂面並將該夾具之該第2部分抵靠於該引線框架的狀態下，使該焊錫膏硬化。
  12. 如申請專利範圍第11項所述之半導體裝置之製造方法，其中， 在該引線框架，以矩陣配列形成複數之半導體裝置形成區域； 在該(b)步驟，對於沿著與該引線框架之搬運方向交叉之方向配置的每一列複數之該半導體晶片，將該夾具跨越複數列之該半導體晶片而同時抵靠於各別之該半導體晶片的該頂面。
TW104144135A 2015-01-09 2015-12-29 半導體裝置之製造方法 TW201635398A (zh)

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