TW201601361A - Hall sensor - Google Patents

Abstract

An object of the present invention is to provide a Hall sensor which is capable of preventing the increase of leakage current even though a GaAs Hall element in a Hall sensor of an island-less structure is miniaturized and thinned. The Hall sensor of the present invention includes: a GaAs Hall element 10 which includes a magnetism-sensing part 12 set on a GaAs substrate 11, electrodes 13a~13d, a protective layer 40 set at a side of the GaAs substrate 11 opposite to the side having the electrodes 13a~13d, wire terminals 22~25 which are disposed around the GaAs Hall element 10; metal lines 31~34 which are electrically connected with the electrodes 13a~13d and the wire terminals 22~25 respectively; and a module-forming component 50 which forms the said portions by module. The protective layer 40 and a first side of the wire terminals 22~25 (i.e. a side opposite to the side connected with the metal lines 31~34) are exposed from a same side of the module-forming component. The resistivity of the GaAs substrate 11 is above 5.9*10<SP>7</SP>[Omega].Cm.

Description

Hall sensor

The present invention is directed to a Hall sensor.

Hall sensors have been used in various fields such as the opening and closing switch of a mobile phone or detecting the position of a camera lens. Hall sensors using GaAs Hall elements are used in various scenarios as Hall sensors with extremely low temperature dependence. For example, Patent Document 1 discloses a Hall sensor including a lead frame, a GaAs Hall element, and a metal thin wire.

[Prior patent documents]

[Patent Document 1]

Japanese Special Open 2013-197386

However, in recent years, with the thinning of electronic devices, the thickness of Hall sensors has also been developed. For example, the size of the Hall sensor package (ie, package size) has been achieved to be 1.6 mm long, 0.8 mm wide, and 0.38 mm thick. Further, by further thinning the GaAs Hall element, it is possible to set the package size thickness to 0.30 mm. Further, in order to further develop the size and thickness of the Hall sensor, it is also considered to omit the structure of the island (that is, the island-free structure).

7(a) and 7(b) are conceptual diagrams for explaining a configuration example and a problem of the Hall sensor 400 of the comparative embodiment of the present invention. As shown in FIG. 7(a), in the islandless structure, the GaAs Hall element 310 is fixed by the molding member 350. Moreover, when the GaAs Hall element 310 having no island structure is mounted on the wiring substrate 450, it is self-molded in each of the lead terminals of the lead frame 320. The back surface of the member 350 exposed is connected to the wiring pattern 451 of the wiring substrate 450 via solder (solder) 370.

Here, when the Hall sensor 400 is small and thin, and its projected area is reduced, the distance between the lead terminals of the lead frame 320 is shortened. Thereby, when the back surface of each lead terminal is soldered to the wiring pattern 451, the solder 370 overflows from the lead terminal and the possibility of reaching the GaAs Hall element 310 is improved. For example, as shown in FIG. 7(a), the possibility that the solder 370 overflowing from the wire terminal 325 contacts the back surface of the GaAs Hall element 310 is improved.

When the solder 370 overflowing from the wire terminal 325 contacts the back surface of the GaAs Hall element 10, its contact surface becomes a Schottky junction of the semiconductor and the metal. Further, as shown in FIG. 7(b), when the lead terminal 325 is a terminal (ie, a power supply terminal) connected to a power source, the solder 370 overflowing from the power supply terminal 325 contacts the back surface of the GaAs Hall element 310. At this time, a bias is applied to the Schottky junction described above. Here, when the GaAs Hall element 310 is thick as before, even if a bias is applied to the Schottky junction described above, the current hardly flows.

However, when the GaAs Hall element 310 is thinned, the resistance value proportional to its reduced thickness is reduced. Therefore, as the GaAs Hall element 310 is thinned, current tends to flow in the forward direction of the Schottky junction, and the leakage current is more easily connected to the power supply terminal 325 → solder 370 → GaAs Hall element 310 → metal thin line 343 → The path of the wire terminal (ie, the ground terminal) 327 of the ground potential flows.

Therefore, the present invention has been completed in view of the above-described problems in the progress of the miniaturization and thinning of the Hall element as described above, and aims to provide a GaAs which is used in a Hall sensor without an island structure. In the case where the element is thin and thin, it is also possible to prevent the Hall sensor from increasing the leakage current.

In order to solve the above problems, a Hall sensor according to an aspect of the present invention includes a GaAs Hall element including a GaAs substrate, a magnetic sensitive portion disposed on the GaAs substrate, and a plurality of GaAs substrates disposed on the GaAs substrate. An electrode portion and a protective layer provided on a surface side of the GaAs substrate opposite to a surface on which the plurality of electrode portions are provided; a plurality of lead terminals disposed around the GaAs Hall element; and a conductive connecting member Each of the plurality of electrode portions and the plurality of wire terminals are electrically connected to the plurality of electrode portions; and a molding member that molds the GaAs Hall element, the plurality of wire terminals, and the conductive connecting member; In the plurality of surfaces of the plurality of lead terminals, when the surface opposite to the surface connected to the conductive connecting member is the first surface of the plurality of lead terminals, the protective layer and the plurality of lead terminals are The first surface is exposed from the same surface of the molding member, and the resistivity of the GaAs substrate is 5.0×10 ⁷ Ω. More than cm.

According to the present invention, since a high-resistance GaAs substrate is used for the GaAs Hall element substrate, even in the case where the GaAs Hall element is made thinner in the Hall sensor having no island structure, leakage current can be prevented from increasing.

10‧‧‧GaAs Hall Elements

11‧‧‧GaAs substrate

12‧‧‧Magnetic Department

13a~13d‧‧‧ electrodes (one of a plurality of electrodes)

20‧‧‧ wire terminals

22‧‧‧ wire terminals (eg power terminals)

23‧‧‧Wire terminal

24‧‧‧ wire terminals (eg grounding terminals)

25‧‧‧ wire terminal

31~34‧‧‧Metal thin wire

40‧‧‧Protective layer

50‧‧‧Molded components

60‧‧‧ plating layer

70‧‧‧ solder

80‧‧‧Heat resistant film

90‧‧‧Molding mould

91‧‧‧ Lower mold

92‧‧‧Upper mold

93‧‧‧Cut Tape

100‧‧‧ Hall sensor

120‧‧‧ lead frame

150‧‧‧Wiring substrate

200‧‧‧ Hall sensor

250‧‧‧Wiring substrate

251‧‧‧Wiring pattern

310‧‧‧GaAs Hall Elements

320‧‧‧ lead frame

325‧‧‧Wire terminal (power terminal)

327‧‧‧Wire terminal (ground terminal)

343‧‧‧Metal thin wire

350‧‧‧Molded components

370‧‧‧ solder

400‧‧‧ Hall sensor

450‧‧‧Wiring substrate

451‧‧‧Wiring pattern

1(a) to 1(d) are views showing a configuration example of a Hall sensor 100 according to an embodiment of the present invention.

Fig. 2 is a graph showing the relationship between the resistance value of the GaAs substrate and the concentration of the acceptor type impurity in the GaAs substrate.

3(a)-(e) are diagrams showing the sequence of steps of the manufacturing method of the Hall sensor 100.

4(a)-(d) are diagrams showing the sequence of steps of the manufacturing method of the Hall sensor 100.

Fig. 5 is a view showing a configuration example of a Hall sensor device 200 according to an embodiment of the present invention.

Fig. 6 is a view for explaining the effects of the embodiment.

7(a) and 7(b) are views for explaining a configuration example and a problem of the Hall sensor 400 of the comparative embodiment of the present invention.

A Hall sensor according to an embodiment of the present invention includes a GaAs Hall element including a GaAs substrate, a magnetic sensitive portion provided on the GaAs substrate, a plurality of electrode portions provided on the GaAs substrate, and a GaAs substrate. a protective layer provided on a surface side opposite to a surface of the plurality of electrode portions; a plurality of wire terminals disposed around the GaAs Hall element; and a conductive connecting member electrically connecting the plurality of electrode portions and the plurality of wires a terminal; and a molding member that molds the GaAs Hall element, the plurality of lead terminals, and the conductive connecting member. In the Hall sensor according to the embodiment of the present invention, when the surface on the opposite side to the surface connected to the conductive connecting member is the first surface of the plurality of lead terminals, the plurality of surfaces of the plurality of lead terminals are used. The first surface of the protective layer and the plurality of wire terminals are exposed from the same surface of the molded member, and the resistivity of the GaAs substrate is 5.0×10 ⁷ Ω. More than cm.

Hereinafter, embodiments of the present invention will be described using the drawings. In the respective drawings, the same components are denoted by the same reference numerals, and the description thereof will not be repeated.

(constitution)

1(a) to 1(d) are a cross-sectional view, a plan view, a bottom view, and an external view showing a configuration example of a Hall sensor 100 according to an embodiment of the present invention. Fig. 1(a) shows a cross section of Fig. 1(b) cut by a broken line A-A'. Further, in Fig. 1(b), in order to avoid complication of the drawings, the molding member (resin member) is omitted and displayed.

As shown in FIGS. 1(a) to (d), the Hall sensor 100 includes a GaAs Hall element 10, a wire terminal 20, a plurality of metal thin wires (conductive connecting members) 31 to 34, a protective layer 40, and a mold. The member 50 and the outer plating layer 60 are formed. Further, the lead terminal 20 includes a plurality of lead terminals 22 to 25.

The GaAs Hall element 10 includes: a semi-insulating gallium arsenide (GaAs) substrate 11; a magnetic sensitive portion 12 including a semiconductor thin film formed on the GaAs substrate 11; and electrodes 13a to 13d electrically connected to the magnetic sensitive portion 12; and a protective layer 40, which is disposed on the GaAs substrate 11 and disposed There is a surface side opposite to the surface of the electrodes 13a to 13d. The magnetic sensitive portion 12 is, for example, a cross (cross) type in plan view, and electrodes 13a to 13d are provided on the four distal end portions. The pair of counter electrodes 13a and 13c are used for the input terminal of the current flowing in the Hall element in plan view, and the other pair of electrodes 13b and 13d are opposed to each other in the direction orthogonal to the line connecting the electrodes 13a and 13c in plan view. An output terminal that outputs a voltage from a Hall element.

The resistivity of the GaAs substrate 11 is 5.0 × 10 ⁷ Ω. More than cm. The upper limit of the resistance value of the GaAs substrate 11 is not particularly limited, but is exemplified by 1.0 × 10 ⁹ Ω. Below cm. Thus, in the embodiment of the present invention, a high resistance GaAs substrate is used.

Fig. 2 is a graph showing the relationship between the resistance value of the GaAs substrate and the concentration of acceptor-type impurities (i.e., P-type impurities) in the GaAs substrate. As shown in FIG. 2, the resistance value of the GaAs substrate largely changes depending on the concentration of the acceptor type impurity (for example, the concentration of carbon: C) in the GaAs substrate. In order to increase the resistance value of the GaAs substrate, the concentration of the acceptor type impurity (for example, the concentration of C) in the GaAs substrate may be increased. For example, in order to set the resistivity of the GaAs substrate 11 to 5.0 × 10 ⁷ Ω. Above cm, the C concentration in the GaAs substrate 11 is set to 1.5 × 10 ¹⁵ atoms. Cm ^-3 or more. The upper limit of the C concentration in the GaAs substrate 11 is, for example, 1.0 × 10 ¹⁶ atoms. Cm ^-3 or less.

The Hall sensor 100 is an islandless structure that includes a plurality of wire terminals 22-25 that can be used to electrically connect to the outside. As shown in FIG. 1(b), the lead terminals 22 to 25 are disposed around the GaAs Hall element 10 (for example, near the four corners of the Hall sensor 100). For example, the lead terminal 22 and the lead terminal 24 are disposed to face each other with the GaAs Hall element 10 interposed therebetween. Further, the lead terminal 23 and the lead terminal 25 are disposed to face each other with the GaAs Hall element 10 interposed therebetween. Further, the lead terminals 22 to 25 are disposed so as to intersect the straight line (imaginary line) connecting the lead terminal 22 and the lead terminal 24 with the straight line (imaginary line) connecting the lead terminal 23 and the lead terminal 25 in a plan view. The lead terminal 20 (the lead terminals 22 to 25) contains a metal such as copper (Cu). Further, the wire terminal 20 can also etch one of its front side or back side (i.e., half-etched).

In addition, although not shown, it is preferable from the viewpoint of electrical connection to the wire terminal 20 On the surface (the upper side of Fig. 1(a)), Ag (silver) plating is applied to the surfaces of the lead terminals 22 to 25 which are connected by the thin metal wires 31 to 34.

Further, in another aspect, plating of nickel (Ni)-palladium (Pd)-gold (Au) or the like may be performed on at least the surface and the back surface of the lead terminal 20 instead of the exterior plating 60. Although it is a Hall sensor, since it has no island, it can be hardly affected by the magnetic coating, ie, a Ni plating film.

The metal thin wires 31 to 34 are electrically connected to the wires 13a to 13d and the lead wires 22 to 25 of the GaAs Hall element 10, respectively, and are made of, for example, gold (Au). As shown in Fig. 1(b), the thin metal wires 31 connect the lead terminals 22 to the electrodes 13a, and the thin metal wires 32 connect the lead terminals 23 and the electrodes 13b. Further, the metal thin wires 33 are connected to the lead terminals 24 and the electrodes 13c, and the thin metal wires 34 are connected to the lead terminals 25 and the electrodes 13d.

The protective layer 40 covers the surface side of the GaAs substrate 11 opposite to the surface on which the electrodes 13a to 13d are provided. The protective layer 40 is not particularly limited as long as it can protect the GaAs substrate 11, and may include at least one of a conductor, an insulator, and a semiconductor. That is, the protective layer 40 may be a film including any one of a conductor, an insulator, or a semiconductor, or may include two or more of them. As the conductor, for example, a conductive resin such as a silver paste or the like is considered. As the insulator, for example, an epoxy resin-based thermosetting resin, an insulating paste of cerium oxide (SiO ₂ ) as a filler, tantalum nitride, cerium oxide, or the like is considered. As the semiconductor, for example, a Si substrate, a Ge substrate, or the like is bonded. However, the protective layer 40 is preferably an insulator from the viewpoint of preventing leakage current. By providing the protective layer 40 as a film including an insulator, leakage current can be prevented from both the protective layer 40 and the GaAs substrate 11. Further, the protective layer 40 may have a laminated structure. However, the metal island of the lead frame or the like for supporting the GaAs Hall element 10 is not included in the protective layer 40.

The molding member 50 molds the GaAs Hall element 10, the lead terminal 20, and the thin metal wires 31 to 34. In other words, the molding member 50 covers the protective (i.e., resin-sealed) GaAs Hall element 10, at least the surface side of the lead terminal 20 (i.e., the side on the side to which the thin metal wires are connected), and the metal thin wires 31 to 34. The molding member 50 contains, for example, an epoxy-based thermosetting resin which can withstand high heat during reflow.

As shown in FIGS. 1(a) and 1(c), at least on the bottom surface side of the Hall sensor 100 (that is, on the side mounted on the wiring board), at least the first surface (for example, the back surface) of each of the lead terminals 22 to 25 A portion of the protective layer 40 is exposed from the same surface (e.g., the back surface) of the molded member 50, respectively. Here, the first surface of each of the lead terminals 22 to 25 is formed on a surface of each of the lead terminals 22 to 25 which is opposite to the surface of the metal thin wires 31 to 34.

Further, the exterior plating layer 60 is formed on the back surface of the lead terminals 22 to 25 exposed from the molding member 50. The exterior plating layer 60 contains, for example, tin (Sn) or the like.

(action)

When the magnetic (magnetic field) is detected using the Hall sensor 100 described above, for example, the lead terminal 22 is connected to the power supply potential (+), and the lead terminal 24 is connected to the ground potential (GND) to cause current from the lead terminal. 22 flows to the wire terminal 24. Next, the potential difference V1-V2 between the lead terminals 23 and 25 (= Hall output voltage VH) is measured. The magnitude of the magnetic field is detected from the magnitude of the Hall output voltage VH, and the direction of the magnetic field is detected from the positive and negative of the Hall output voltage VH.

In other words, the lead terminal 22 supplies a specific voltage to the power supply lead terminal of the GaAs Hall element 10. The lead terminal 24 supplies a ground potential to the ground lead terminal of the GaAs Hall element 10. The lead terminals 23 and 25 are signal take-out lead terminals for taking out the Hall electromotive force signal of the GaAs Hall element 10.

(Production method)

A method of manufacturing a Hall sensor according to an embodiment of the present invention includes: a step of preparing a lead frame having a plurality of wire terminals on one side of a substrate; and mounting on a region surrounded by a plurality of wire terminals on one side of the substrate a step of a GaAs Hall element having a protective layer; a step of electrically connecting a plurality of electrode portions and a plurality of wire terminals included in the GaAs Hall element by a plurality of conductive connecting members; and mounting the substrate by a molding member The step of molding the surface side of the GaAs Hall element; and the step of separating the substrate from the mold member and the protective layer, in the step of separating the substrate, exposing the protective layer and the plurality of wire terminals from the molded member. In addition, the so-called GaAs Hall element including the protective layer is attached to the GaAs substrate. A GaAs Hall element provided with a protective layer on the side opposite to the surface on the opposite side of the plurality of electrode portions.

3(a) to (e) and Figs. 4(a) to 4(d) are a plan view and a cross-sectional view showing the procedure of the manufacturing method of the Hall sensor 100. In addition, in FIGS. 3(a) to (e), the blade width (ie, the slit width) of the dicing is omitted.

As shown in FIG. 3(a), first, a lead frame 120 in which the above-described lead terminals are formed is prepared. The lead frame 120 is a substrate in which a plurality of lead terminals 20 shown in FIG. 1(b) are connected in a longitudinal direction and a lateral direction in a plan view.

Next, as shown in FIG. 3(b), one side surface of the heat-resistant film 80 as a substrate is attached to the back side of the lead frame 120. An insulating adhesive layer is applied to one side of the heat-resistant film 80, for example. The adhesive layer is used as a component thereof, for example, a polyoxyxylene resin. The lead frame 120 can be easily attached to the heat-resistant film 80 by the adhesive layer. By attaching the heat-resistant film 80 to the back side of the lead frame 120, the through-hole region through which the lead frame 120 penetrates is in a state of being covered with the heat-resistant film 80 from the back side.

Further, as the heat-resistant film 80 which is a substrate, it is preferable to use a resin-made tape which has adhesiveness and has heat resistance.

Regarding the adhesion, the thinner the adhesive layer of the adhesive layer, the better. Further, regarding heat resistance, it is necessary to withstand a temperature of about 50 ° C to 200 ° C. For example, a polyimide film 80 can be used as the heat-resistant film 80. Polyimide tapes have a heat resistance that can withstand about 280 °C. Polyimide tapes having such high heat resistance can also withstand the high heat applied during subsequent molding or bonding of metal wires. Further, as the heat-resistant film 80, in addition to the polyimide film, the following tape may be used.

. Polyester tape Heat resistant temperature is about 130 ° C (however, the heat resistant temperature can reach about 200 ° C depending on the conditions of use)

. Teflon (registered trademark) tape Heat resistant temperature: about 180 ° C

. PPS (polyphenylene sulfide) heat resistant temperature: about 160 ° C

. Glass cloth heat resistant temperature: about 200 ° C

. Nomex paper Heat resistant temperature: about 150~200°C

. Alternatively, an aromatic polyamide or crepe paper can be used as the heat-resistant film 80.

Next, as shown in FIG. 3(c), in the region having the adhesive layer of the heat-resistant film 80, the GaAs Hall element 10 having the protective layer 40 is placed in a region surrounded by the lead terminals 22 to 25 (that is, Wafer bonding). Here, the protective layer 40 is subjected to wafer bonding to the surface of the heat-resistant film 80 having the adhesive layer.

Next, as shown in FIG. 3(d), one end of the metal thin wires 31 to 34 is connected to each of the lead terminals 22 to 25, and the other ends of the thin metal wires 31 to 34 are respectively connected to the electrodes 13a to 13d (that is, metal is performed). Line bonding). Next, as shown in FIG. 3(e), the molding member 50 is formed (that is, resin molding is performed). This resin molding is carried out, for example, using a transfer molding technique.

For example, as shown in FIG. 4(a), a molding die 90 including a lower die 91 and an upper die 92 is prepared, and a lead frame 120 to which a metal wire is bonded is disposed in a cavity of the molding die 90. Next, the heat-melted molding member 50 is injected and filled on the side of the heat-resistant film 80 in the chamber having the adhesive layer (that is, the surface to which the lead frame 120 is connected). Thereby, the GaAs Hall element 10, the lead frame 120, and the metal thin wires 31 to 34 are molded. That is, the GaAs Hall element 10, at least the surface side of the lead frame 120, and the thin metal wires 31 to 34 are covered by the molding member 50 to be protected. Further, after the molding member 50 is thermally cured, the molding member 50 is taken out from the molding die. Further, the surface of the molding member 50 may be, for example, a symbol or the like (not shown) in any step after the resin is sealed.

Next, as shown in FIG. 4(b), the heat-resistant film 80 is peeled off from the molding member 50. Thereby, the protective layer 40 of the GaAs Hall element 10 is exposed from the molding member 50. Next, as shown in FIG. 4(c), the surface of the lead frame 120 from which the molded member 50 is exposed (at least, the back surface of each of the lead terminals 22 to 25 exposed from the molded member 50) is subjected to exterior plating to form an outer surface. The outer plating layer 60.

Next, as shown in FIG. 4(d), a dicing tape 93 is attached to the upper surface of the molding member 50 (i.e., the surface of the Hall sensor 100 opposite to the surface of the exterior plating layer 60). Next, for example, along the imaginary 2-point chain line as shown in FIG. 3(e), the blade is opposed to the lead frame 120. Moving, the molding member 50 and the lead frame 120 are cut (ie, cut). That is, each of the plurality of GaAs Hall elements 10 is cut into a single piece by cutting the molding member 50 and the lead frame 120. As shown in FIG. 4(d), the cut lead frame becomes the wire terminal 20.

Through the above steps, the Hall sensor 100 shown in FIGS. 1(a) to (d) is completed.

Fig. 5 is a cross-sectional view showing a configuration example of a Hall sensor device 200 according to an embodiment of the present invention. After the Hall sensor 100 is completed, the wiring substrate 250 is prepared, for example, as shown in FIG. 5, and the Hall sensor 100 is mounted on one side of the wiring substrate 250. In the mounting step, for example, in each of the lead terminals 22 to 25, the back surface exposed from the molding member 50 and covered with the exterior plating layer 60 is connected to the wiring pattern 251 of the wiring substrate 250 via the solder 70. This welding is carried out, for example, by reflow.

In the reflow method, the solder paste is applied (ie, printed) on the wiring pattern 251, and the Hall sensor 100 is disposed on the wiring substrate 250 so as to overlap the external plating layer 60 thereon, and in this state, A method in which solder paste applies heat to melt the solder. Through the mounting step, as shown in FIG. 5, the wiring substrate 250 including the Hall sensor 100, the Hall sensor 100 is mounted, and the lead terminals 22 to 25 of the Hall sensor 100 are electrically connected to each other. The Hall sensor device 200 of the solder 70 of the wiring pattern 251 of the wiring substrate 250.

(Effects of the embodiment)

The embodiment of the present invention can exert the following effects.

In the Hall sensor 100 of the island structure, the GaAs Hall element substrate has a resistivity of 5.0×10 ⁷ Ω. High resistance GaAs substrate above cm. Thereby, when the Hall sensor 100 is mounted on the wiring substrate 250, for example, when the solder 70 overflows from the lead terminal (ie, the power supply terminal) 22 connected to the power supply potential to the lower side of the GaAs Hall element 10, At this time, an increase in leakage current of the flow can be suppressed. That is, for example, as shown in FIG. 6, when the current flows in the direction of the power supply terminal 22 → the metal thin wire 31 → the electrode 13 a → the magnetic sensitive portion 12 → the electrode 13 c → the metal thin wire 33 → the wire terminal 24, when the Hall element 10 In the case where the thickness is thin, the leakage current is more likely to flow in the path of the power supply terminal 22 → the solder 70 → the Hall element 10 → the metal thin wire 33 → the wire terminal 24 . However, in the embodiment of the present invention, a high-resistance GaAs substrate is used for the substrate of the GaAs Hall element, so that an increase in the leakage current can be prevented.

The embodiment of the present invention can be particularly preferably used in a GaAs Hall element substrate in which a leakage current easily flows, which is 0.1 mm or less. Even in the case where the GaAs Hall element in the Hall sensor having no island structure is made thinner, the leakage current can be prevented from increasing.

<Other>

The present invention is not limited to the embodiments described above. It is possible to add design changes and the like to the respective embodiments based on the knowledge of those skilled in the art, and such additional modifications and the like are also included in the scope of the present invention.

10‧‧‧GaAs Hall Elements

11‧‧‧GaAs substrate

12‧‧‧Magnetic Department

13a~13d‧‧‧electrode

20‧‧‧ wire terminals

22‧‧‧ wire terminals (eg power terminals)

23‧‧‧Wire terminal

24‧‧‧ wire terminals (eg grounding terminals)

25‧‧‧ wire terminal

31~34‧‧‧Metal thin wire

40‧‧‧Protective layer

50‧‧‧Molded components

60‧‧‧External plating

100‧‧‧ Hall sensor

Claims (6)

A Hall sensor comprising: a GaAs Hall element comprising: a GaAs substrate; a magnetic sensitive portion disposed on the GaAs substrate; a plurality of electrode portions disposed on the GaAs substrate; and a protective layer And disposed on a surface side of the GaAs substrate opposite to a surface on which the plurality of electrode portions are provided; a plurality of lead terminals disposed around the GaAs Hall element; and electrically conductive connecting members electrically connected a plurality of electrode portions and the plurality of wire terminals; and a molding member molding the GaAs Hall element, the plurality of wire terminals, and the conductive connecting member; and having the plurality of wire terminals In the plurality of surfaces, when the surface on the opposite side to the surface to which the conductive connecting member is connected is the first surface of the plurality of lead terminals, the first surface of the protective layer and the plurality of lead terminals is from the above The same surface of the molded member is exposed, and the resistivity of the GaAs substrate is 5.0×10 ⁷ Ω. More than cm. The Hall sensor of claim 1, wherein the concentration of the acceptor type impurity in the GaAs substrate is 1.5×10 ¹⁵ atoms. Cm ^-3 or more 1.0 × 10 ¹⁶ atoms. Cm ^-3 or less. A Hall sensor according to claim 2, wherein said acceptor type impurity is carbon. A Hall sensor according to any one of claims 1 to 3, wherein the protective layer comprises an insulator. The Hall sensor according to any one of claims 1 to 3, wherein the thickness of the GaAs substrate is 0.1 mm or less. The Hall sensor according to any one of claims 1 to 3, wherein the GaAs substrate has a resistivity of 1.0 × 10 ⁹ Ω. Below cm.