TWI562415B - - Google Patents

Info

Publication number
TWI562415B
TWI562415B TW104109040A TW104109040A TWI562415B TW I562415 B TWI562415 B TW I562415B TW 104109040 A TW104109040 A TW 104109040A TW 104109040 A TW104109040 A TW 104109040A TW I562415 B TWI562415 B TW I562415B
Authority
TW
Taiwan
Application number
TW104109040A
Other languages
Chinese (zh)
Other versions
TW201601361A (en
Inventor
Toshiaki Fukunaka
Arata Kasamatsu
Original Assignee
Asahi Kasei Microdevices Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Kasei Microdevices Corp filed Critical Asahi Kasei Microdevices Corp
Publication of TW201601361A publication Critical patent/TW201601361A/en
Application granted granted Critical
Publication of TWI562415B publication Critical patent/TWI562415B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW104109040A 2014-06-17 2015-03-20 Hall sensor TW201601361A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014124651 2014-06-17
JP2015049786A JP6110886B2 (en) 2014-06-17 2015-03-12 Hall sensor

Publications (2)

Publication Number Publication Date
TW201601361A TW201601361A (en) 2016-01-01
TWI562415B true TWI562415B (en) 2016-12-11

Family

ID=55266192

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104109040A TW201601361A (en) 2014-06-17 2015-03-20 Hall sensor

Country Status (3)

Country Link
JP (3) JP6110886B2 (en)
KR (2) KR101614251B1 (en)
TW (1) TW201601361A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6899244B2 (en) * 2016-04-20 2021-07-07 ローム株式会社 Semiconductor device
JP6864440B2 (en) * 2016-06-15 2021-04-28 ローム株式会社 Semiconductor device
JP6718754B2 (en) * 2016-06-16 2020-07-08 ローム株式会社 Semiconductor device
JP6744149B2 (en) * 2016-06-20 2020-08-19 ローム株式会社 Semiconductor device and manufacturing method thereof
JP6986385B2 (en) * 2016-08-22 2021-12-22 ローム株式会社 Semiconductor device, mounting structure of semiconductor device
KR102000348B1 (en) * 2016-09-28 2019-07-15 아사히 가세이 일렉트로닉스 가부시끼가이샤 Magnetic sensor
JP2018066722A (en) * 2016-10-14 2018-04-26 旭化成エレクトロニクス株式会社 Semiconductor device
JP2018163908A (en) * 2017-03-24 2018-10-18 旭化成エレクトロニクス株式会社 Semiconductor device
JP2021042963A (en) * 2019-09-06 2021-03-18 株式会社デンソー Production method of physical quantity sensor
CN111261595A (en) * 2020-01-20 2020-06-09 上海艾为电子技术股份有限公司 Base-island-free frame packaging structure and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW473563B (en) * 1998-09-28 2002-01-21 Sumitomo Electric Industries GaAs single crystal substrate and epitaxial wafer using the same
CN203536475U (en) * 2012-10-26 2014-04-09 旭化成微电子株式会社 Magnetic sensor and magnetic sensor device

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124273A (en) * 1987-11-10 1989-05-17 Asahi Chem Ind Co Ltd Mounting structure of magnetoelectric transducer
JPH0291590A (en) * 1988-09-29 1990-03-30 Asahi Chem Ind Co Ltd Lead for magneto-electric converting element
JP2849100B2 (en) * 1988-12-23 1999-01-20 旭化成工業株式会社 Magnetoelectric conversion element and method of manufacturing the same
JPH06318547A (en) * 1993-05-06 1994-11-15 Hitachi Cable Ltd Compound semiconductor epitaxial wafer
JPH08102563A (en) * 1994-08-02 1996-04-16 Toshiba Corp Semiconductor hall element
JP3567500B2 (en) * 1994-09-30 2004-09-22 昭和電工株式会社 Hall element
JP2005123383A (en) * 2003-10-16 2005-05-12 Asahi Kasei Electronics Co Ltd Electromagnetic transducer element
JP2005294443A (en) * 2004-03-31 2005-10-20 Sony Corp Semiconductor device and its manufacturing method
JP2007263951A (en) * 2006-02-14 2007-10-11 Murata Mfg Co Ltd Magnetic sensor
JP5044489B2 (en) 2007-08-28 2012-10-10 日本碍子株式会社 Hall element, Hall IC, and method of manufacturing Hall element
JP2013197386A (en) 2012-03-21 2013-09-30 Asahi Kasei Electronics Co Ltd Hall element
CN106784300A (en) * 2012-12-14 2017-05-31 旭化成微电子株式会社 The manufacture method of Magnetic Sensor and magnet sensor arrangement and Magnetic Sensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW473563B (en) * 1998-09-28 2002-01-21 Sumitomo Electric Industries GaAs single crystal substrate and epitaxial wafer using the same
CN203536475U (en) * 2012-10-26 2014-04-09 旭化成微电子株式会社 Magnetic sensor and magnetic sensor device

Also Published As

Publication number Publication date
JP6110886B2 (en) 2017-04-05
KR20150144699A (en) 2015-12-28
JP6325142B2 (en) 2018-05-16
JP2017120927A (en) 2017-07-06
JP6480622B2 (en) 2019-03-13
KR20160046325A (en) 2016-04-28
JP2016021549A (en) 2016-02-04
TW201601361A (en) 2016-01-01
KR101614251B1 (en) 2016-04-20
JP2018137470A (en) 2018-08-30

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