JP2018163908A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2018163908A
JP2018163908A JP2017058678A JP2017058678A JP2018163908A JP 2018163908 A JP2018163908 A JP 2018163908A JP 2017058678 A JP2017058678 A JP 2017058678A JP 2017058678 A JP2017058678 A JP 2017058678A JP 2018163908 A JP2018163908 A JP 2018163908A
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Prior art keywords
terminal
sealing body
semiconductor device
lead
lead terminals
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拓也 石田
Takuya Ishida
拓也 石田
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Asahi Kasei Electronics Co Ltd
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Asahi Kasei Electronics Co Ltd
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Priority to JP2017058678A priority Critical patent/JP2018163908A/en
Priority to CN201820403062.0U priority patent/CN207896074U/en
Publication of JP2018163908A publication Critical patent/JP2018163908A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18165—Exposing the passive side of the semiconductor or solid-state body of a wire bonded chip

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  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To secure sufficient mounting strength by soldering even when an area of a terminal bottom surface is small in a semiconductor device manufactured by a method including a process to integrally sever a sealing body and a lead frame and to segment them into pieces.SOLUTION: A semiconductor device 100 includes: a semiconductor element 10 having a magnetoelectric transducing function and provided with a plurality of electrodes; lead terminals 21 to 24 arranged around a semiconductor element in a planar view; a plurality of fine metal wirings; and a sealing body 50. At least one of the plurality of lead terminals has: terminal bottom surfaces 21a to 24a exposed from a sealing body bottom surface 51; terminal upper surfaces 21b to 24b exposed from a sealing body upper surface 52; and terminal outer side surfaces 21c to 24c, 21d to 24d exposed from a sealing body side surface 53. In a cross-sectional view, at least a part of the terminal outer side surface is hung outside from an end part of the terminal bottom surface. That is, in a planar view, end parts H1, H3 on the terminal bottom surface side are inside end parts H2, H4 on the terminal upper surface side.SELECTED DRAWING: Figure 1

Description

この発明は半導体装置に関する。   The present invention relates to a semiconductor device.

近年、電子機器の小型化に伴い、電子部品の小型・薄型化が進展している。その中で、センサなどの半導体装置では、ＳＯＮ（Small Outline Non-leaded Package）やＱＦＮ（Quad flat no lead package）と称されるノンリードタイプのパッケージが採用されている。
ＳＯＮやＱＦＮによるパッケージの製造方法（特許文献１などを参照）では、先ず、リードフレーム上の複数位置に複数の素子を搭載した後、合成樹脂で複数の素子を含むリードフレーム全体を一括して封止する。次に、ダイシングブレードにより、合成樹脂を含む材料で形成される封止体とリードフレームを一体に切断して個片化することで、一つの素子と複数のリード端子とを含む半導体装置を、複数個得る。 In recent years, with the miniaturization of electronic devices, electronic components have become smaller and thinner. Among them, semiconductor devices such as sensors employ non-lead type packages called SON (Small Outline Non-leaded Package) and QFN (Quad flat no lead package).
In a package manufacturing method using SON or QFN (see Patent Document 1, etc.), first, a plurality of elements are mounted at a plurality of positions on a lead frame, and then the entire lead frame including the plurality of elements is collectively made of synthetic resin. Seal. Next, the dicing blade integrally cuts the sealing body formed of a material containing a synthetic resin and the lead frame into individual pieces, whereby a semiconductor device including one element and a plurality of lead terminals is obtained. Get multiple.

複数個の半導体装置は、例えば、リード端子の一面が封止体の一面から露出し、この露出面に外装メッキ層が形成された状態で得られる。そして、得られた半導体装置をプリント基板に実装する際に、リード端子の露出面が、外装メッキ層を介してプリント基板の配線パターン上に半田付けされる。つまり、上述の方法で得られた半導体装置の封止体は実装側の面である封止体底面を有し、リード端子は封止体端面から露出する端子底面を有する。   The plurality of semiconductor devices are obtained, for example, in a state where one surface of the lead terminal is exposed from one surface of the sealing body and an exterior plating layer is formed on the exposed surface. Then, when the obtained semiconductor device is mounted on the printed board, the exposed surface of the lead terminal is soldered onto the wiring pattern of the printed board through the exterior plating layer. That is, the sealing body of the semiconductor device obtained by the above method has a bottom surface of the sealing body that is a surface on the mounting side, and the lead terminal has a bottom surface of the terminal exposed from the end surface of the sealing body.

特開２００７−２４２６４３号公報JP 2007-242643 A

しかしながら、上述の方法で製造された半導体装置には、半導体装置の小型化に伴い、封止体端面から露出する端子底面の面積が小さくなると、半田付け面積が小さくなることに起因して実装強度が低下するという問題点がある。
この発明の課題は、端子底面の面積が小さい場合でも半田付けによる十分な実装強度が確保できるようにすることである。 However, in the semiconductor device manufactured by the above-described method, as the size of the semiconductor device is reduced, the soldering area is reduced when the area of the terminal bottom exposed from the end surface of the sealing body is reduced. There is a problem that it decreases.
An object of the present invention is to ensure sufficient mounting strength by soldering even when the area of the terminal bottom surface is small.

上記課題を解決するために、この発明の一態様の半導体装置は、下記の構成要件(1)〜(6)を有する。
(1)磁電変換機能を有し、複数の電極を備えた半導体素子を備えている。
(2)平面視で前記半導体素子の周囲に配置された複数のリード端子を備えている。
(3)半導体素子の複数の電極と複数のリード端子とを、それぞれ電気的に接続する複数の導体を備えている。
(4)封止体を備えている。この封止体は、半導体素子、リード端子、および複数の導体を封止する。この封止体は、実装側の面である封止体底面と、封止体底面の反面である封止体上面と、封止体底面の端部から封止体上面の端部に至る封止体側面と、を有する。
(5)複数のリード端子の少なくとも一つは、封止体底面から露出する端子底面、端子底面の反面である端子上面、および封止体側面から露出する端子外側面を有する。
(6)断面視で、端子外側面の少なくとも一部は、端子底面の端部より外側に張り出している。 In order to solve the above problems, a semiconductor device according to one embodiment of the present invention has the following structural requirements (1) to (6).
(1) A semiconductor element having a magnetoelectric conversion function and having a plurality of electrodes is provided.
(2) It has a plurality of lead terminals arranged around the semiconductor element in plan view.
(3) A plurality of conductors are provided for electrically connecting the plurality of electrodes of the semiconductor element and the plurality of lead terminals, respectively.
(4) A sealing body is provided. The sealing body seals the semiconductor element, the lead terminal, and the plurality of conductors. The sealing body includes a sealing body bottom surface that is a surface on the mounting side, a sealing body top surface that is opposite to the sealing body bottom surface, and a sealing member that extends from the end of the sealing body bottom to the end of the sealing body top surface. And a stationary body side surface.
(5) At least one of the plurality of lead terminals has a terminal bottom surface exposed from the bottom surface of the sealing body, a terminal top surface opposite to the terminal bottom surface, and a terminal outer surface exposed from the side surface of the sealing body.
(6) In sectional view, at least a part of the outer surface of the terminal protrudes outward from the end portion of the terminal bottom surface.

この発明の一態様の半導体装置は、端子底面の面積が小さい場合でも半田付けによる十分な実装強度が確保され易くなる。   In the semiconductor device of one embodiment of the present invention, sufficient mounting strength by soldering is easily ensured even when the area of the terminal bottom surface is small.

第一実施形態の磁気センサを示す斜視図（ａ）と、平面図（ｂ）と、（ｂ）のＣ−Ｃ断面図（ｃ）である。It is the perspective view (a) which shows the magnetic sensor of 1st embodiment, a top view (b), and CC sectional drawing (c) of (b). 第一実施形態の磁気センサの封止体第一側面を示す側面図（ａ）と、底面図（ｂ）と、封止体第二側面を示す側面図（ｃ）である。It is the side view (a) which shows the sealing body 1st side surface of the magnetic sensor of 1st embodiment, a bottom view (b), and the side view (c) which shows a sealing body 2nd side surface. 第一実施形態の磁気センサの製造方法を工程順に説明する平面図である。It is a top view explaining the manufacturing method of the magnetic sensor of a first embodiment in order of a process. 第一実施形態の磁気センサの製造方法の樹脂封止工程以降を工程順に説明する断面図（ａ）〜（ｄ）と側面図（ｅ）である。It is sectional drawing (a)-(d) and the side view (e) explaining the resin sealing process after the manufacturing method of the magnetic sensor of 1st embodiment after process order. 第一実施形態の磁気センサがプリント基板に実装された状態を示す断面図であって、（ａ）は磁気センサの断面が図１（ｂ）のＶ−Ｖ断面の場合の図、（ｂ）は磁気センサの断面が図１（ｂ）のＣ−Ｃ断面の場合の図である。It is sectional drawing which shows the state with which the magnetic sensor of 1st embodiment was mounted in the printed circuit board, Comprising: (a) is a figure in case the cross section of a magnetic sensor is the VV cross section of FIG.1 (b), (b). These are the figures in case the cross section of a magnetic sensor is CC cross section of FIG.1 (b). 第二実施形態の磁気センサを示す平面図（ａ）と、（ａ）のＢ−Ｂ断面図（ｂ）と、（ａ）のＣ−Ｃ断面図（ｃ）である。It is the top view (a) which shows the magnetic sensor of 2nd embodiment, BB sectional drawing (b) of (a), and CC sectional drawing (c) of (a). 第二実施形態の磁気センサの製造方法の樹脂封止工程以降を工程順に説明する断面図（ａ）〜（ｄ）と側面図（ｅ）である。It is sectional drawing (a)-(d) and the side view (e) explaining the resin sealing process after the manufacturing method of the magnetic sensor of 2nd embodiment after process order. 第二実施形態の磁気センサがプリント基板に実装された状態を示す断面図であって、（ａ）は磁気センサの断面が図６（ａ）のＣ−Ｃ断面の場合の図、（ｂ）は磁気センサの断面が図６（ａ）のＢ−Ｂ断面の場合の図である。It is sectional drawing which shows the state with which the magnetic sensor of 2nd embodiment was mounted in the printed circuit board, Comprising: (a) is a figure in case the cross section of a magnetic sensor is CC cross section of Fig.6 (a), (b). These are the figures in case the cross section of a magnetic sensor is a BB cross section of Fig.6 (a). 端子第一外側面のみが封止体から露出している磁気センサの例を示す斜視図（ａ）と、平面図（ｂ）である。They are the perspective view (a) which shows the example of the magnetic sensor which only the terminal 1st outer surface is exposed from the sealing body, and a top view (b). 図９の磁気センサの封止体第一側面を示す側面図（ａ）と、底面図（ｂ）と、封止体第二側面を示す側面図（ｃ）である。It is the side view (a) which shows the sealing body first side surface of the magnetic sensor of FIG. 9, the bottom view (b), and the side view (c) which shows the sealing body second side surface. 端子第二外側面のみが封止体から露出している磁気センサの例を示す斜視図（ａ）と、平面図（ｂ）である。They are the perspective view (a) which shows the example of the magnetic sensor which only the terminal 2nd outer surface is exposed from the sealing body, and a top view (b). 図１１の磁気センサの封止体第一側面を示す側面図（ａ）と、底面図（ｂ）と、封止体第二側面を示す側面図（ｃ）である。It is the side view (a) which shows the sealing body 1st side surface of the magnetic sensor of FIG. 11, a bottom view (b), and the side view (c) which shows a sealing body 2nd side surface.

以下、この発明の実施形態について説明するが、この発明は以下に示す実施形態に限定されない。以下に示す実施形態では、この発明を実施するために技術的に好ましい限定がなされているが、この限定はこの発明の必須要件ではない。
なお、以下の説明で使用する図において、図示されている各部の寸法関係は、実際の寸法関係と異なる場合がある。 Hereinafter, although embodiment of this invention is described, this invention is not limited to embodiment shown below. In the embodiment described below, a technically preferable limitation is made for carrying out the present invention, but this limitation is not an essential requirement of the present invention.
Note that in the drawings used in the following description, the dimensional relationships of the respective parts illustrated may be different from the actual dimensional relationships.

〔第一実施形態〕
第一実施形態として、磁電変換機能を有する半導体素子としてホール素子を用いた磁気センサ（半導体装置）について説明する。
［構成］
図１および図２に示すように、この実施形態の磁気センサ１００は、ホール素子１０と、四個（複数）のリード端子２１〜２４と、四本（複数）の金属細線３１〜３４と、絶縁層４０と、合成樹脂を含む材料で形成された封止体５０と、外装メッキ層６０とを有する。磁気センサ１００は、ホール素子１０を載置するためのアイランド部を有さない。つまり、磁気センサ１００はアイランドレス構造を有する。なお、図１（ａ）では外装メッキ層６０が省略されている。 [First embodiment]
As a first embodiment, a magnetic sensor (semiconductor device) using a Hall element as a semiconductor element having a magnetoelectric conversion function will be described.
[Constitution]
As shown in FIGS. 1 and 2, the magnetic sensor 100 of this embodiment includes a Hall element 10, four (plural) lead terminals 21 to 24, four (plural) fine metal wires 31 to 34, It has the insulating layer 40, the sealing body 50 formed with the material containing a synthetic resin, and the exterior plating layer 60. The magnetic sensor 100 does not have an island portion on which the hall element 10 is placed. That is, the magnetic sensor 100 has an islandless structure. In FIG. 1A, the exterior plating layer 60 is omitted.

図１（ａ）に示すように、磁気センサ１００は四角錐台の外観形状を有する。この四角錐台の内部に、ホール素子１０と、リード端子２１〜２４と、金属細線３１〜３４と、絶縁層４０が配置されている。封止体５０をなす材料は、これらの部品と四角錐台をなす六個の面との間を埋めるとともに、六個の面を形成している。つまり、封止体５０は、実装側の面である封止体底面５１と、その反面である封止体上面５２と、封止体底面５１の端部から封止体上面５２の端部に至る封止体第一側面５３および封止体第二側面５４を有する。
封止体底面５１と封止体上面５２は互いに平行な相似の長方形であり、封止体底面５１は封止体上面５２より面積が大きい。封止体第一側面５３は、封止体底面５１および封止体上面５２をなす各長方形の長辺同士を接続する斜面である。封止体第二側面５４は、封止体底面５１および封止体上面５２をなす各長方形の短辺同士を接続する斜面である。 As shown in FIG. 1A, the magnetic sensor 100 has an external shape of a quadrangular pyramid. Inside the quadrangular pyramid, the Hall element 10, the lead terminals 21 to 24, the thin metal wires 31 to 34, and the insulating layer 40 are arranged. The material forming the sealing body 50 fills the space between these parts and the six surfaces forming the quadrangular pyramid, and forms six surfaces. That is, the sealing body 50 includes a sealing body bottom surface 51 that is a surface on the mounting side, a sealing body top surface 52 that is the opposite surface, and an end portion of the sealing body bottom surface 51 from an end portion of the sealing body top surface 52. The sealing body first side surface 53 and the sealing body second side surface 54 are provided.
The sealing body bottom surface 51 and the sealing body top surface 52 are similar rectangles parallel to each other, and the sealing body bottom surface 51 has a larger area than the sealing body top surface 52. The sealing body first side surface 53 is a slope connecting long sides of the respective rectangles forming the sealing body bottom surface 51 and the sealing body top surface 52. The sealing body second side surface 54 is a slope connecting short sides of the respective rectangles forming the sealing body bottom surface 51 and the sealing body top surface 52.

＜ホール素子＞
図１（ｂ）に示すように、ホール素子１０は、基板１１上に形成された活性層（磁気感受部）１２と、活性層１２と電気的に接続された四個（複数）の電極１３ａ〜１３ｄとを有する。図１（ｂ）では、封止体５０の内部に存在するこれらの部品が実線で記載されている。
図１（ｂ）および図２（ｂ）に示すように、ホール素子１０の基板１１の平面形状は正方形である。基板１１は、例えば、半絶縁性のガリウムヒ素（ＧａＡｓ）を含む材料で形成されている。また、基板１１としては、シリコン（Ｓｉ）などを含む材料で形成された半導体基板や、フェライト基板などの磁気を収束する効果のある基板を用いることもできる。
活性層１２は、例えば、インジウムアンチモン（ＩｎＳｂ）やガリウムヒ素などの化合物半導体を含む材料で形成された薄膜である。
ホール素子１０の厚さは、例えば１００μｍ以下である。 <Hall element>
As illustrated in FIG. 1B, the Hall element 10 includes an active layer (magnetic sensing portion) 12 formed on a substrate 11 and four (plural) electrodes 13 a electrically connected to the active layer 12. ~ 13d. In FIG. 1B, these parts existing inside the sealing body 50 are indicated by solid lines.
As shown in FIGS. 1B and 2B, the planar shape of the substrate 11 of the Hall element 10 is a square. The substrate 11 is made of, for example, a material containing semi-insulating gallium arsenide (GaAs). The substrate 11 may be a semiconductor substrate formed of a material containing silicon (Si) or the like, or a substrate having an effect of converging magnetism, such as a ferrite substrate.
The active layer 12 is a thin film formed of a material containing a compound semiconductor such as indium antimony (InSb) or gallium arsenide.
The thickness of the Hall element 10 is, for example, 100 μm or less.

＜リード端子＞
リード端子２１〜２４は、磁気センサ１００と外部との電気的接続を得るための端子である。図１（ｂ）に示すように、リード端子２１〜２４は、平面視でホール素子１０の周囲に配置されている。
図１および図２に示すように、リード端子２１〜２４は、封止体底面５１と同一面内にある端子底面２１ａ〜２４ａと、端子底面２１ａ〜２４ａと平行でその反面である端子上面２１ｂ〜２４ｂと、封止体第一側面５３と同一面内にある端子第一外側面２１ｃ〜２４ｃと、封止体第二側面５４と同一面内にある端子第二外側面２１ｄ〜２４ｄとを有する。また、リード端子２１〜２４は、ホール素子１０側の面である内側面２１ｅ〜２４ｅと、隣のリード端子との対向面２１ｆ〜２４ｆとを有する。内側面２１ｅ〜２４ｅおよび対向面２１ｆ〜２４ｆは、端子底面２１ａ〜２４ａに対して垂直な面である。 <Lead terminal>
The lead terminals 21 to 24 are terminals for obtaining an electrical connection between the magnetic sensor 100 and the outside. As shown in FIG. 1B, the lead terminals 21 to 24 are arranged around the Hall element 10 in a plan view.
As shown in FIGS. 1 and 2, the lead terminals 21 to 24 include a terminal bottom surface 21 a to 24 a that is in the same plane as the sealing body bottom surface 51, and a terminal top surface 21 b that is parallel to and opposite to the terminal bottom surfaces 21 a to 24 a. To 24b, terminal first outer side surfaces 21c to 24c in the same plane as the sealing body first side surface 53, and terminal second outer side surfaces 21d to 24d in the same plane as the sealing body second side surface 54. Have. Further, the lead terminals 21 to 24 have inner side surfaces 21e to 24e which are surfaces on the Hall element 10 side, and opposing surfaces 21f to 24f with the adjacent lead terminals. The inner side surfaces 21e to 24e and the facing surfaces 21f to 24f are surfaces perpendicular to the terminal bottom surfaces 21a to 24a.

つまり、リード端子２１〜２４は、直方体の四側面のうち接触する二側面が端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂ側に向けて徐々に外側に張り出す斜面となった形状を有している。すなわち、端子外側面の全部（少なくとも一部）が、端子外側面の端子底面側の端部より外側に張り出している。リード端子２１〜２４において、その二側面（斜面）は端子第一外側面２１ｃ〜２４ｃおよび端子第一外側面２１ｃ〜２４ｃである。
端子第一外側面２１ｃ〜２４ｃおよび端子第一外側面２１ｃ〜２４ｃは、リード端子２１〜２４の厚さ方向全体で、端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂ側に向けて徐々に外側に張り出して立ち上がる立ち上がり面となっている。端子第一外側面２１ｃ〜２４ｃは、封止体第一側面５３の斜面に沿った斜面である。端子第二外側面２１ｄ〜２４ｄは、封止体第二側面５４の斜面に沿った斜面である。すなわち、リード端子２１〜２４の立ち上がり面である端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄは平面である。 In other words, the lead terminals 21 to 24 have a shape in which two contacting side surfaces among the four side surfaces of the rectangular parallelepiped have slopes gradually projecting outward from the terminal bottom surfaces 21a to 24a toward the terminal top surfaces 21b to 24b. Yes. That is, all (at least a part) of the terminal outer surface projects outward from the end of the terminal outer surface on the terminal bottom surface side. In the lead terminals 21 to 24, the two side surfaces (slopes) are a terminal first outer side surface 21c to 24c and a terminal first outer side surface 21c to 24c.
The terminal first outer surfaces 21c to 24c and the terminal first outer surfaces 21c to 24c are gradually outward from the terminal bottom surfaces 21a to 24a toward the terminal upper surfaces 21b to 24b in the entire thickness direction of the lead terminals 21 to 24. It is a rising surface that overhangs and stands up. The terminal first outer surfaces 21 c to 24 c are inclined surfaces along the inclined surface of the sealing body first side surface 53. The terminal second outer surfaces 21 d to 24 d are inclined surfaces along the inclined surface of the sealing body second side surface 54. That is, the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d, which are rising surfaces of the lead terminals 21 to 24, are flat surfaces.

これにより、平面視で、端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａを構成する辺（立ち上がり面である端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａ側の端部）Ｈ１は、端子第一外側面２１ｃ〜２４ｃの端子上面２１ｂ〜２４ｂを構成する辺（立ち上がり面である端子第一外側面２１ｃ〜２４ｃの端子上面２１ｂ〜２４ｂ側の端部）Ｈ２より内側にある。また、平面視で、端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａを構成する辺（立ち上がり面である端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａ側の端部）Ｈ３は、端子第二外側面２１ｄ〜２４ｄの端子上面２１ｂ〜２４ｂを構成する辺（立ち上がり面である端子第二外側面２１ｄ〜２４ｄの端子上面２１ｂ〜２４ｂ側の端部）Ｈ４より内側にある。辺Ｈ１〜Ｈ４はリード端子２３にのみ表示する。   Thereby, the side (end part by the side of the terminal bottom face 21a-24a of the terminal 1st outer side surface 21c-24c which is a standing surface) which comprises the terminal bottom face 21a-24a of the terminal 1st outer side face 21c-24c by planar view H1 Is located on the inner side of the sides (ends on the terminal upper surfaces 21b to 24b side of the terminal first outer surfaces 21c to 24c, which are rising surfaces) constituting the terminal upper surfaces 21b to 24b of the terminal first outer surfaces 21c to 24c. Further, in a plan view, the sides constituting the terminal bottom surfaces 21a to 24a of the terminal second outer surfaces 21d to 24d (end portions on the terminal bottom surfaces 21a to 24a side of the terminal second outer surfaces 21d to 24d which are rising surfaces) H3 are The sides constituting the terminal upper surfaces 21b to 24b of the terminal second outer surfaces 21d to 24d (ends on the terminal upper surfaces 21b to 24b side of the terminal second outer surfaces 21d to 24d, which are rising surfaces) are located inside the H4. The sides H1 to H4 are displayed only on the lead terminal 23.

すなわち、端子底面２１ａ〜２４ａ、端子上面２１ｂ〜２４ｂ及び端子第一外側面２１ｃ〜２４ｃを通る断面視で、端子第一外側面２１ｃ〜２４ｃの全部（少なくとも一部）は、端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａ側の端部Ｈ１より外側に張り出している。端子底面２１ａ〜２４ａ、端子上面２１ｂ〜２４ｂ及び端子第一外側面２１ｃ〜２４ｃを通る断面とは、図１（ｂ）に示すＶ−Ｖ断面で示される、端子上面２１ｂ〜２４ｂに垂直な断面である。また、「外側」とは、端子底面２１ａ〜２４ａ、端子上面２１ｂ〜２４ｂ及び端子第一外側面２１ｃ〜２４ｃを通る断面視で、端子第一外側面２１ｃ〜２４ｃに対して垂直方向又は垂直成分を有し封止体５０内部から封止体５０外部に向く方向をいう。   That is, in the cross-sectional view passing through the terminal bottom surfaces 21a to 24a, the terminal top surfaces 21b to 24b, and the terminal first outer surfaces 21c to 24c, all (at least a part) of the terminal first outer surfaces 21c to 24c is the terminal first outer surface. The terminal bottom surfaces 21a to 24a of the terminals 21c to 24c protrude outward from the end H1. The cross section passing through the terminal bottom surfaces 21a to 24a, the terminal top surfaces 21b to 24b, and the terminal first outer side surfaces 21c to 24c is a cross section perpendicular to the terminal top surfaces 21b to 24b shown in the VV cross section shown in FIG. It is. The “outside” is a vertical direction or a vertical component with respect to the terminal first outer surfaces 21c to 24c in a cross-sectional view passing through the terminal bottom surfaces 21a to 24a, the terminal upper surfaces 21b to 24b, and the terminal first outer surfaces 21c to 24c. The direction from the inside of the sealing body 50 to the outside of the sealing body 50 is said.

また、端子底面２１ａ〜２４ａ、端子上面２１ｂ〜２４ｂ及び端子第二外側面２１ｄ〜２４ｄを通る断面視で、端子第二外側面２１ｄ〜２４ｄの全部（少なくとも一部）は、端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａ側の端部Ｈ３より外側に張り出している。端子底面２１ａ〜２４ａ、端子上面２１ｂ〜２４ｂ及び端子第二外側面２１ｄ〜２４ｄを通る断面とは、図１（ｂ）に示すＣ−Ｃ断面で示される断面で示される、端子上面２１ｂ〜２４ｂに垂直な断面（図１（ｃ）に示す断面）である。また、「外側」とは、端子底面２１ａ〜２４ａ、端子上面２１ｂ〜２４ｂ及び端子第二外側面２１ｄ〜２４ｄを通る断面視で、端子第二外側面２１ｄ〜２４ｄに対して垂直方向又は垂直成分を有し封止体５０内部から封止体５０外部に向く方向をいう。   Further, in the cross-sectional view passing through the terminal bottom surfaces 21a to 24a, the terminal top surfaces 21b to 24b, and the terminal second outer surfaces 21d to 24d, all (at least a part) of the terminal second outer surfaces 21d to 24d are terminal second outer surfaces. The terminal bottom surfaces 21a to 24a of the terminals 21d to 24d protrude outward from the end H3. The cross sections passing through the terminal bottom surfaces 21a to 24a, the terminal upper surfaces 21b to 24b, and the terminal second outer surfaces 21d to 24d are the terminal upper surfaces 21b to 24b shown in the cross section shown by the CC cross section shown in FIG. It is a cross section perpendicular | vertical (cross section shown to FIG.1 (c)). Further, “outside” means a vertical direction or vertical component with respect to the terminal second outer surfaces 21d to 24d in a cross-sectional view passing through the terminal bottom surfaces 21a to 24a, the terminal upper surfaces 21b to 24b, and the terminal second outer surfaces 21d to 24d. The direction from the inside of the sealing body 50 to the outside of the sealing body 50 is said.

端子第一外側面２１ｃ〜２４ｃと端子底面２１ａ〜２４ａとのなす角度θ１は、例えば９５°であり、９０°より大きく１２０°以下であることが好ましい。端子第二外側面２１ｄ〜２４ｄと端子底面２１ａ〜２４ａとのなす角度θ２は、例えば１１０°であり、９０°より大きく１２０°以下であることが好ましい。
端子底面２１ａ〜２４ａの合計面積は、例えば０．０６ｍｍ2であり、０．０８ｍｍ2未満であることが好ましく、０．０７５ｍｍ2以下であることがより好ましく、０．０６ｍｍ2以下であることがさらに好ましい。 An angle θ1 formed between the terminal first outer surfaces 21c to 24c and the terminal bottom surfaces 21a to 24a is, for example, 95 °, and preferably greater than 90 ° and equal to or less than 120 °. An angle θ2 formed between the terminal second outer side surfaces 21d to 24d and the terminal bottom surfaces 21a to 24a is, for example, 110 °, and preferably greater than 90 ° and equal to or less than 120 °.
The total area of the terminal bottom 21a~24a is, for example, 0.06 mm 2, preferably less than 0.08 mm 2, more preferably 0.075 mm 2 or less, it is 0.06 mm 2 or less Further preferred.

端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａに垂直な方向の寸法Ｔ２ｃと、端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａに垂直な方向の寸法Ｔ２ｄは同じであり、例えば１００μｍであり、１１０μｍ以下であることが好ましく、１００μｍ以上１０５μｍ以下であることがより好ましい。なお、この実施形態の磁気センサ１００では、リード端子の厚さが均一であるため、リード端子の端子底面に垂直な方向の寸法がどの位置でも同じであるが、１１０μｍ以下であることが好ましい「リード端子の厚さ」とは、端子外側面の端子底面に垂直な方向の寸法である。
リード端子２１〜２４は、例えば、銅（Ｃｕ）または銅合金、鉄（Ｆｅ）または鉄を含む合金等の金属材料で形成され、特に銅製であることが好ましい。また、リード端子２１〜２４の上面２１ａ〜２４ａに、銀（Ａｇ）めっき、またはニッケル（Ｎｉ）−パラジウム（Ｐｄ）−金（Ａｕ）めっきが施されていてもよい。また、リード端子２１〜２４の下面２１ｅ〜２４ｅに、ニッケル（Ｎｉ）−パラジウム（Ｐｄ）−金（Ａｕ）めっきが施されていてもよい。 The dimension T2c in the direction perpendicular to the terminal bottom faces 21a to 24a of the terminal first outer faces 21c to 24c is the same as the dimension T2d in the direction perpendicular to the terminal bottom faces 21a to 24a of the terminal second outer faces 21d to 24d. It is 100 μm, preferably 110 μm or less, and more preferably 100 μm or more and 105 μm or less. In the magnetic sensor 100 of this embodiment, since the thickness of the lead terminal is uniform, the dimension in the direction perpendicular to the terminal bottom surface of the lead terminal is the same at any position, but it is preferably 110 μm or less. The “lead terminal thickness” is a dimension in a direction perpendicular to the terminal bottom surface of the terminal outer surface.
The lead terminals 21 to 24 are made of a metal material such as copper (Cu) or a copper alloy, iron (Fe), or an alloy containing iron, and are particularly preferably made of copper. Moreover, silver (Ag) plating or nickel (Ni) -palladium (Pd) -gold (Au) plating may be applied to the upper surfaces 21a-24a of the lead terminals 21-24. Further, nickel (Ni) -palladium (Pd) -gold (Au) plating may be applied to the lower surfaces 21e-24e of the lead terminals 21-24.

＜金属細線＞
図１（ｂ）に示すように、金属細線３１〜３４は、ホール素子１０が有する電極１３ａ〜１３ｄと、リード端子２１〜２４とを、それぞれ電気的に接続している。具体的には、金属細線３１がリード端子２１と電極１３ａとを接続し、金属細線３２がリード端子２２と電極１３ｂとを接続し、金属細線３３がリード端子２３と電極１３ｃとを接続し、金属細線３４がリード端子２４と電極１３ｄとを接続している。
金属細線３１〜３４は、例えば、金、銀、または銅を含む材料で形成されている。 <Metallic thin wire>
As shown in FIG.1 (b), the metal fine wires 31-34 electrically connect the electrodes 13a-13d which the Hall element 10 has, and the lead terminals 21-24, respectively. Specifically, the fine metal wire 31 connects the lead terminal 21 and the electrode 13a, the fine metal wire 32 connects the lead terminal 22 and the electrode 13b, the fine metal wire 33 connects the lead terminal 23 and the electrode 13c, A thin metal wire 34 connects the lead terminal 24 and the electrode 13d.
The thin metal wires 31 to 34 are formed of a material containing, for example, gold, silver, or copper.

＜絶縁層＞
絶縁層４０は、ホール素子１０の裏面に接触状態で配置されている。
絶縁層４０は、磁気センサ１００を実装する実装基板の電極等と磁気センサ１００との絶縁を図るとともに、ホール素子１０を保護する保護膜の役割を果たす層であるが、設けなくてもよい。
絶縁層４０をなす材料としては、合成樹脂や金属酸化物が挙げられる。絶縁層４０は、合成樹脂を含む材料で形成された層と金属酸化物を含む材料で形成された層のいずれか一層で構成されていてもよいし、これらの層の二層構造であってもよい。
合成樹脂の例としては、フォトレジスト材（ネガ型でもポジ型でも可）や、エポキシ樹脂などの熱硬化型樹脂にフィラーを含む材料が挙げられる。フィラーの材質としては、シリ力（ＳｉＯ2）、アルミナ（Ａｌ2Ｏ3）、チタニア（ＴｉＯ2）などのセラミックスや金属酸化物が好ましい。
金属酸化物としては、酸化チタン（ＴｉＯ2）などが使用できる。 <Insulating layer>
The insulating layer 40 is disposed in contact with the back surface of the Hall element 10.
The insulating layer 40 is a layer that serves as a protective film that protects the Hall element 10 and also insulates the magnetic sensor 100 from the electrodes of the mounting substrate on which the magnetic sensor 100 is mounted, but may not be provided.
Examples of the material forming the insulating layer 40 include synthetic resins and metal oxides. The insulating layer 40 may be composed of any one of a layer formed of a material containing a synthetic resin and a layer formed of a material containing a metal oxide, or a two-layer structure of these layers. Also good.
Examples of the synthetic resin include a photoresist material (which can be negative or positive) and a material containing a filler in a thermosetting resin such as an epoxy resin. As the material of the filler, ceramics and metal oxides such as silli force (SiO 2 ), alumina (Al 2 O 3 ), and titania (TiO 2 ) are preferable.
As the metal oxide, titanium oxide (TiO 2 ) or the like can be used.

絶縁層４０がフィラーと合成樹脂とを含む材料で形成される場合、絶縁層４０の厚さはフィラーの寸法で決まる。この厚さは例えば２μｍ以上とするが、ホール素子１０の保護の観点から１０μｍ以上３０μｍ以下とすることが好ましい。絶縁層４０が金属酸化物の場合は、製法上、膜厚を厚くすると生産コスト高くなるため、例えば、１μｍ程度にすることが好ましい。
なお、「フィラーの寸法」とは、球状のフィラーの場合は球の直径であり、球体が破砕された形状を有するフィラーの場合は、元の球体の径方向で最も大きい部分の寸法であり、繊維状のフィラーの場合は繊維断面の長径である。 When the insulating layer 40 is formed of a material containing a filler and a synthetic resin, the thickness of the insulating layer 40 is determined by the size of the filler. The thickness is, for example, 2 μm or more, but is preferably 10 μm or more and 30 μm or less from the viewpoint of protecting the Hall element 10. In the case where the insulating layer 40 is a metal oxide, it is preferable to set the thickness to about 1 μm, for example, because the production cost increases when the film thickness is increased due to the manufacturing method.
The “filler dimension” is the diameter of a sphere in the case of a spherical filler, and the dimension of the largest part in the radial direction of the original sphere in the case of a filler having a crushed shape. In the case of a fibrous filler, the major axis is the fiber cross section.

＜封止体＞
図１（ｃ）に示すように、封止体５０は、ホール素子１０とリード端子２１〜２４と金属細線３１〜３４とを封止する。上述のように、封止体５０は、封止体底面５１と、封止体上面５２と、封止体第一側面５３と、封止体第二側面５４を有する。
封止体５０の厚さ（つまり、磁気センサ１００の厚さ）は均一である。すなわち、封止体第一側面５３の封止体底面５１に垂直な方向の寸法Ｔ５ｃと、封止体第二側面５４の封止体底面５１に垂直な方向の寸法Ｔ５ｄは同じであって、例えば１８５μｍである。封止体５０の厚さ（つまり、封止体底面５１と封止体上面５２との最短距離）は、２３０μｍ未満であることが好ましく、２２５μｍ以下であることがより好ましく、２００μｍ以下であることがさらに好ましい。 <Sealing body>
As shown in FIG.1 (c), the sealing body 50 seals the Hall element 10, the lead terminals 21-24, and the metal fine wires 31-34. As described above, the sealing body 50 includes the sealing body bottom surface 51, the sealing body top surface 52, the sealing body first side surface 53, and the sealing body second side surface 54.
The thickness of the sealing body 50 (that is, the thickness of the magnetic sensor 100) is uniform. That is, the dimension T5c in the direction perpendicular to the sealing body bottom surface 51 of the sealing body first side surface 53 and the dimension T5d in the direction perpendicular to the sealing body bottom surface 51 of the sealing body second side surface 54 are the same, For example, it is 185 μm. The thickness of the sealing body 50 (that is, the shortest distance between the sealing body bottom surface 51 and the sealing body top surface 52) is preferably less than 230 μm, more preferably 225 μm or less, and 200 μm or less. Is more preferable.

封止体５０は合成樹脂を含む材料で形成されているが、この材料は、合成樹脂以外に、フィラーや不可避的に混在する不純物などを含む。この材料におけるフィラーの混合量は、５０体積％以上９９体積％以下であることが好ましく、７０体積％以上９９体積％以下であることがより好ましく、８５体積％以上９９体積％以下であることがさらに好ましい。
封止体５０をなす材料に含まれる合成樹脂には、絶縁性、線膨張係数がリード端子と近い値であること、耐衝撃性、耐熱性（磁気センサ１００をリフローハンダ付けする時の高熱に耐えられること）、および耐吸湿性が求められる。 The sealing body 50 is formed of a material containing a synthetic resin, but this material contains a filler, impurities inevitably mixed in addition to the synthetic resin. The mixing amount of the filler in this material is preferably 50% by volume to 99% by volume, more preferably 70% by volume to 99% by volume, and more preferably 85% by volume to 99% by volume. Further preferred.
The synthetic resin contained in the material forming the sealing body 50 has insulating properties and linear expansion coefficients that are close to those of the lead terminals, impact resistance, and heat resistance (high heat when the magnetic sensor 100 is reflow soldered). Endurance) and moisture absorption resistance.

封止体５０をなす材料に含まれる合成樹脂の線膨張係数がリード端子の線膨張係数に近い値であると、熱ストレスで磁気センサ１００のパッケージに生じる応力が抑制されるため、パッケージに割れが生じにくくなる。そのため、例えば、リード端子が銅製である場合、封止体５０の材料として、銅の線膨張係数（１６．８×１０8／℃）に近い線膨張係数を有する合成樹脂を用いることが好ましい。
耐衝撃性に関しては、封止体５０の材料として、弾性率の高い合成樹脂を用いることが好ましい。
封止体５０を形成する材料に含まれる合成樹脂としては、例えば、エポキシ樹脂などの熱硬化性樹脂、テフロン（登録商標）が挙げられる。封止体５０を形成する材料に含まれる合成樹脂は、１種類であってもよいし、２種類以上であってもよい。また、後述のシートを用いた成形法を採用して封止体５０を形成する場合は、封止体５０の封止体上面５２側の部分に、このシートを構成する合成樹脂が存在していてもよい。 If the linear expansion coefficient of the synthetic resin contained in the material forming the sealing body 50 is a value close to the linear expansion coefficient of the lead terminal, the stress generated in the package of the magnetic sensor 100 due to thermal stress is suppressed, so the package is cracked. Is less likely to occur. Therefore, for example, when the lead terminal is made of copper, it is preferable to use a synthetic resin having a linear expansion coefficient close to that of copper (16.8 × 10 8 / ° C.) as the material of the sealing body 50.
Regarding impact resistance, it is preferable to use a synthetic resin having a high elastic modulus as the material of the sealing body 50.
Examples of the synthetic resin contained in the material forming the sealing body 50 include a thermosetting resin such as an epoxy resin and Teflon (registered trademark). The synthetic resin contained in the material forming the sealing body 50 may be one type or two or more types. Moreover, when forming the sealing body 50 by adopting a molding method using a sheet described later, the synthetic resin constituting the sheet is present in the portion on the sealing body upper surface 52 side of the sealing body 50. May be.

＜外装メッキ層＞
外装メッキ層６０は、封止体５０の封止体底面５１と同一面内にあるリード端子２１〜２４の下面２１ｅ〜２４ｅに形成されている。外装めっき層６０の平面形状は、リード端子２１〜２４の下面２１ｅ〜２４ｅの平面形状と同じである。外装めっき層６０は、例えば、スズ（Ｓｎ）を含む材料で形成されている。なお、リード端子２１〜２４の下面２１ｅ〜２４ｅに、予めニッケル（Ｎｉ）−パラジウム（Ｐｄ）−金（Ａｕ）めっきが施されている場合には、外装メッキ層６０を設ける必要はない。 <Exterior plating layer>
The exterior plating layer 60 is formed on the lower surfaces 21 e to 24 e of the lead terminals 21 to 24 that are in the same plane as the sealing body bottom surface 51 of the sealing body 50. The planar shape of the exterior plating layer 60 is the same as the planar shape of the lower surfaces 21e to 24e of the lead terminals 21 to 24. The exterior plating layer 60 is made of, for example, a material containing tin (Sn). When nickel (Ni) -palladium (Pd) -gold (Au) plating is applied in advance to the lower surfaces 21e-24e of the lead terminals 21-24, it is not necessary to provide the exterior plating layer 60.

［動作］
この実施形態の磁気センサ１００を用いて磁気（磁界）を検出する場合には、例えば、リード端子２１を電源電位（＋）に接続すると共に、リード端子２２を接地電位（ＧＮＤ）に接続して、リード端子２１からリード端子２２に電流を流す。そして、リード端子２３，２４間の電位差Ｖ１−Ｖ２（＝ホール出力電圧ＶＨ）を測定する。また、測定されたホール出力電圧ＶＨの大きさから磁界の大きさを検出し、ホール出力電圧ＶＨの正負から磁界の向きを検出する。 [Operation]
In the case of detecting magnetism (magnetic field) using the magnetic sensor 100 of this embodiment, for example, the lead terminal 21 is connected to the power supply potential (+) and the lead terminal 22 is connected to the ground potential (GND). A current is passed from the lead terminal 21 to the lead terminal 22. Then, the potential difference V1−V2 (= Hall output voltage VH) between the lead terminals 23 and 24 is measured. Further, the magnitude of the magnetic field is detected from the measured magnitude of the Hall output voltage VH, and the direction of the magnetic field is detected from the positive / negative of the Hall output voltage VH.

［製法］
図３および図４を用いて、第一実施形態の磁気センサ１００の製造方法を説明する。
先ず、表面に複数のホール素子１０のパターンが形成されたウエハの裏面の各ホール素子１０の位置に、平面形状がホール素子１０とほぼ同じ絶縁層４０を形成する。次に、ウエハをダイシングラインに沿って切断することで個片化する。これにより、裏面に絶縁層４０が形成されたホール素子１０が得られる。
次に、図３（ａ）に示すリードフレーム１２０を用意する。リードフレーム１２０は、リード部１２１〜１２４を有する。リード部１２１〜１２３は、平面視で隣り合う磁気センサ１００の二個または四個のリード端子を含む形状を有する。リード部１２４は、磁気センサ１００の一つのリード端子を含む形状を有する。
なお、リード部１２２とリード部１２４をリードフレーム１２０の外縁に沿って接続する接続部と、各リード部１２１〜１２４をダイシングラインＬ１，Ｌ２に沿って接続する接続部は図示されていない。 [Production method]
A method for manufacturing the magnetic sensor 100 according to the first embodiment will be described with reference to FIGS. 3 and 4.
First, the insulating layer 40 having the same planar shape as that of the Hall element 10 is formed at the position of each Hall element 10 on the back surface of the wafer on which the pattern of the plurality of Hall elements 10 is formed on the front surface. Next, the wafer is cut into individual pieces by cutting along the dicing line. Thereby, the Hall element 10 in which the insulating layer 40 is formed on the back surface is obtained.
Next, the lead frame 120 shown in FIG. The lead frame 120 has lead portions 121 to 124. The lead parts 121 to 123 have a shape including two or four lead terminals of the magnetic sensor 100 adjacent in plan view. The lead part 124 has a shape including one lead terminal of the magnetic sensor 100.
Note that a connection part that connects the lead part 122 and the lead part 124 along the outer edge of the lead frame 120 and a connection part that connects the lead parts 121 to 124 along the dicing lines L1 and L2 are not shown.

次に、リードフレーム１２０の裏面に、例えばポリイミド製の耐熱性フィルム８０を貼り付けて、リードフレーム１２０のリード部１２１〜１２４がない部分（貫通領域）を裏面側から耐熱性フィルム８０で塞ぐ。耐熱性フィルム８０として、一方の面に絶縁性の粘着層を有するものを使用し、この粘着層で耐熱性フィルム８０とリードフレーム１２０を接合する。つまり、耐熱性フィルム８０とリードフレーム１２０との接合体８１を得る。図３（ｂ）はこの工程後の状態を示す。
次に、裏面に絶縁層４０が形成されたホール素子１０を、接合体８１の上面（耐熱性フィルム８０の粘着層）のホール素子配置領域（リード端子２１〜２４で囲まれた領域）に配置する（即ち、ダイボンディングを行う）。図３（ｃ）はこの工程後の状態を示す。 Next, a heat resistant film 80 made of, for example, polyimide is attached to the back surface of the lead frame 120, and a portion (penetrating region) where the lead portions 121 to 124 of the lead frame 120 are not provided is covered with the heat resistant film 80 from the back surface side. As the heat resistant film 80, a film having an insulating adhesive layer on one surface is used, and the heat resistant film 80 and the lead frame 120 are joined by this adhesive layer. That is, a joined body 81 of the heat resistant film 80 and the lead frame 120 is obtained. FIG. 3B shows the state after this step.
Next, the Hall element 10 having the insulating layer 40 formed on the back surface is disposed in the Hall element arrangement area (area surrounded by the lead terminals 21 to 24) on the upper surface of the bonded body 81 (adhesive layer of the heat resistant film 80). (Ie, die bonding is performed). FIG. 3C shows the state after this step.

なお、ホール素子配置領域に絶縁ペーストを塗布し、その上に絶縁層４０が形成されていないホール素子１０を配置して絶縁ペーストを硬化させることで、絶縁層４０を形成してもよい。その場合は、完成後の磁気センサ１００において、ホール素子１０の裏面の一部が封止体５０から露出することがないように、絶縁ペーストの塗布条件（例えば、塗布する範囲、塗布する厚さ等）を調整する。
そして、ダイボンディングを行った後に熱処理（即ち、キュア）を行い、耐熱性フィルム８０と絶縁層４０の密着性を向上させる。 The insulating layer 40 may be formed by applying an insulating paste to the hall element arrangement region, placing the hall element 10 on which the insulating layer 40 is not formed thereon, and curing the insulating paste. In that case, in the completed magnetic sensor 100, the application conditions of the insulating paste (for example, the application range, the application thickness, etc.) are set so that a part of the back surface of the Hall element 10 is not exposed from the sealing body 50. Etc.).
Then, after performing die bonding, heat treatment (that is, curing) is performed to improve the adhesion between the heat resistant film 80 and the insulating layer 40.

次に、金属細線３１〜３４の一端を各リード端子２１〜２４にそれぞれ接続し、金属細線３１〜３４の他端を電極１３ａ〜１３ｄにそれぞれ接続する（即ち、ワイヤーボンディングを行う）。図３（ｄ）は、この工程後の状態を示す。
次に、図３（ｄ）の状態の接合体８１を金型内に入れて、接合体８１の上面側に封止体５０を形成する。具体的には、先ず、図５（ａ）に示すように、下型９１と上型９２を備えた金型９０およびシート９４を用意し、シート９４を、上型９２の下面（下型９１と対向する面）の全面を覆うように配置する。シート９４は、例えばテフロン（登録商標）製である。 Next, one end of the fine metal wires 31 to 34 is connected to the lead terminals 21 to 24, respectively, and the other end of the fine metal wires 31 to 34 is connected to the electrodes 13a to 13d (that is, wire bonding is performed). FIG. 3D shows the state after this step.
Next, the bonded body 81 in the state of FIG. 3D is put in a mold, and the sealing body 50 is formed on the upper surface side of the bonded body 81. Specifically, first, as shown in FIG. 5A, a mold 90 and a sheet 94 having a lower mold 91 and an upper mold 92 are prepared, and the sheet 94 is attached to the lower surface (lower mold 91). It is arranged so as to cover the entire surface facing the surface. The sheet 94 is made of, for example, Teflon (registered trademark).

次に、金型９０内に図３（ｄ）の状態の接合体８１を配置する。具体的には、金属細線３１〜３４側を上に向けて、接合体８１を下型９１の上に載せ、金属細線３１〜３４の上側に所定の間隔を開けて上型９２を配置し、シート９４を上型９２の下面に吸着させる。図４（ａ）はこの状態を示す。
次に、図４（ａ）の状態の上型９２と下型９１との空間に溶融樹脂を流し込んだ後に、上型９２を下降させて溶融樹脂に圧縮力を加えることにより、シート９４の下面と下型９１の上面との間隔を設定値に合わせた後、冷却する。これにより、封止体５０が形成される。図４（ｂ）はこの状態を示す。 Next, the joined body 81 in the state of FIG. Specifically, with the metal thin wires 31 to 34 facing upward, the joined body 81 is placed on the lower die 91, and the upper die 92 is disposed above the metal thin wires 31 to 34 with a predetermined interval therebetween. The sheet 94 is adsorbed on the lower surface of the upper mold 92. FIG. 4A shows this state.
Next, after pouring the molten resin into the space between the upper die 92 and the lower die 91 in the state shown in FIG. 4A, the upper die 92 is lowered to apply a compressive force to the molten resin, thereby lowering the lower surface of the sheet 94. After the distance between the upper surface of the lower mold 91 and the upper surface of the lower mold 91 is set to the set value, the cooling is performed. Thereby, the sealing body 50 is formed. FIG. 4B shows this state.

次に、封止体５０が形成された接合体８１を金型９０から取り出した後、接合体８１から耐熱性フィルム８０を剥離する。これにより、複数のセンサ前躯体（外装メッキ層６０を形成する前の磁気センサ１００）が結合された結合体１０００が得られる。図４（ｃ）および図３（ｅ）はこの状態を示す。
次に、封止体５０の封止体底面５１と同一面内にあるリードフレーム１２０の面に、外装めっきを施す。これにより、リード端子２１〜２４の端子底面２１ａ〜２４ａに外装めっき層６０が形成され、複数の磁気センサ１００が結合された結合体１００１が得られる。図４（ｄ）はこの状態を示す。 Next, after taking out the joined body 81 on which the sealing body 50 is formed from the mold 90, the heat resistant film 80 is peeled from the joined body 81. As a result, a combined body 1000 in which a plurality of sensor precursor bodies (the magnetic sensor 100 before forming the exterior plating layer 60) is combined is obtained. FIG. 4C and FIG. 3E show this state.
Next, exterior plating is performed on the surface of the lead frame 120 in the same plane as the sealing body bottom surface 51 of the sealing body 50. Thereby, the exterior plating layer 60 is formed on the terminal bottom surfaces 21a to 24a of the lead terminals 21 to 24, and a combined body 1001 in which a plurality of magnetic sensors 100 are combined is obtained. FIG. 4D shows this state.

次に、封止体５０の封止体上面５２にダイシングテープ９３を貼り付けた後、ダイシングテープ９３を下側にして結合体１００１をダイシング装置に設置し、図３（ｅ）に示すダイシングラインＬ１，Ｌ２に沿って、結合体１００１を、ダイシングブレードを用いて切断する。ダイシングラインＬ１に沿った切断により封止体第一側面５３が生じ、ダイシングラインＬ２に沿った切断により封止体第二側面５４が生じる。図４（ｅ）はこの状態を示す。
この切断の際に、封止体第一側面５３および封止体第二側面５４は、ダイシングブレード７の先端部７１の斜面７１ａに応じた斜面となる。つまり、角度θ１，θ２の設定値に応じて、これに対応する斜面７１ａを有する先端部７ａを備えたダイシングブレードを使用する。そして、最後に、ダイシングテープ９３を除去することにより、複数の磁気センサ１００が得られる。 Next, after the dicing tape 93 is attached to the sealing body upper surface 52 of the sealing body 50, the combined body 1001 is installed in the dicing apparatus with the dicing tape 93 facing down, and the dicing line shown in FIG. Along the lines L1 and L2, the bonded body 1001 is cut using a dicing blade. The sealing body first side surface 53 is generated by cutting along the dicing line L1, and the sealing body second side surface 54 is generated by cutting along the dicing line L2. FIG. 4 (e) shows this state.
At the time of this cutting, the sealing body first side surface 53 and the sealing body second side surface 54 become slopes corresponding to the slope 71 a of the tip 71 of the dicing blade 7. That is, a dicing blade having a tip portion 7a having a slope 71a corresponding to the set values of the angles θ1 and θ2 is used. Finally, by removing the dicing tape 93, a plurality of magnetic sensors 100 are obtained.

［作用、効果］
この実施形態の磁気センサ１００は、例えば図5に示すように、プリント基板２５０の配線パターン２５１上にリフロー方式の半田付けにより実装される。リフロー方式の半田付けでは、先ず、配線パターン２５１上の所定位置に半田ペーストを印刷法などにより塗布する。次に、封止体底面５１をプリント基板２５０側に向けて、塗布された半田ペーストに外装めっき層６０が重なるように、磁気センサ１００を配置する。この状態で半田ペーストを加熱することにより、フラックスが液化され、半田が溶融し、フラックスとの反応により酸化膜が除去されて、外装メッキ層６０と配線パターン２５１とが半田７０により接着される。 [Action, effect]
For example, as shown in FIG. 5, the magnetic sensor 100 of this embodiment is mounted on the wiring pattern 251 of the printed board 250 by reflow soldering. In reflow soldering, first, a solder paste is applied to a predetermined position on the wiring pattern 251 by a printing method or the like. Next, the magnetic sensor 100 is arranged so that the outer plating layer 60 overlaps the applied solder paste with the sealing body bottom surface 51 facing the printed circuit board 250 side. By heating the solder paste in this state, the flux is liquefied, the solder is melted, the oxide film is removed by reaction with the flux, and the exterior plating layer 60 and the wiring pattern 251 are bonded by the solder 70.

この実施形態の磁気センサ１００では、この半田付けで磁気センサ１００を配置した際に、端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂに向けて広がる斜面となっている端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄに沿って、半田ペーストが這い上がる。これにより、リード端子２１〜２４と配線パターン２５１とが、外装メッキ層６０が形成された端子底面２１ａ〜２４ａだけでなく、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄでも、半田７０により接着される。
これに対して、端子底面２１ａ〜２４ａから端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄが垂直に立ち上がる垂直面を有するリード端子（θ１，θ２が９０°の場合）では、このような半田ペーストの這い上がりが期待できない。 In the magnetic sensor 100 of this embodiment, when the magnetic sensor 100 is disposed by this soldering, the terminal first outer side surfaces 21c to 24c that are inclined to spread from the terminal bottom surfaces 21a to 24a toward the terminal upper surfaces 21b to 24b. And the solder paste crawls up along the terminal second outer side surfaces 21d to 24d. Thereby, the lead terminals 21 to 24 and the wiring pattern 251 are not only the terminal bottom surfaces 21a to 24a on which the exterior plating layer 60 is formed, but also the terminal first outer side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d. Are bonded by solder 70.
On the other hand, in the case of a lead terminal (when θ1 and θ2 are 90 °) in which the terminal first outer surfaces 21c to 24c and the terminal second outer surface 21d rise vertically from the terminal bottom surfaces 21a to 24a, this is the case. I can not expect a creeping up of the solder paste.

そのため、この実施形態の磁気センサ１００は、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが端子底面２１ａ〜２４ａに対して垂直なものと比較して、半田付けによる実装強度が高くなる。従って、この実施形態の磁気センサ１００によれば、リード端子２１〜２４の端子底面２１ａ〜２４ａの合計面積は小さい（０．０８ｍｍ2未満である）が、半田付けによる十分な実装強度が確保できる。
また、端子外側面が端子底面から端子上面側に向かって徐々に外側に広がる立ち上がり面となっていることにより、リード端子の寸法Ｔ２ｃ，Ｔ２ｄが小さい（１１０μｍ以下である）場合であっても、這い上がった半田で端子側面が覆われる面積比が大きくなり、以下の効果が得られる。端子底面２１ａ〜２４ａの合計面積が小さいと、半田付け時の半田量の制御が難しく、半田量のばらつきで半田量が多い場合には封止体上面まで半田が這い上がり、その半田が飛び散って他の実装部品に付着するなどの不良となる可能性がある。これに対して、這い上がった半田で端子側面が覆われる面積比が大きくなると、表面張力で、半田が端子側面にとどまる量が多くなり、封止体上面まで半田が這い上がることが抑制される。 Therefore, in the magnetic sensor 100 of this embodiment, the mounting strength due to soldering is higher than that in which the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d are perpendicular to the terminal bottom surfaces 21a to 24a. Becomes higher. Therefore, according to the magnetic sensor 100 of this embodiment, the total area of the terminal bottom surfaces 21a to 24a of the lead terminals 21 to 24 is small (less than 0.08 mm 2 ), but sufficient mounting strength by soldering can be ensured. .
Moreover, even when the dimensions T2c and T2d of the lead terminal are small (110 μm or less) because the terminal outer surface is a rising surface that gradually spreads outward from the terminal bottom surface toward the terminal upper surface side, The area ratio in which the side surface of the terminal is covered with the solder that has been scooped up is increased, and the following effects can be obtained. When the total area of the terminal bottom surfaces 21a to 24a is small, it is difficult to control the amount of solder at the time of soldering, and when the amount of solder is large due to variation in the amount of solder, the solder crawls up to the upper surface of the sealing body. There is a possibility of a defect such as adhesion to other mounted parts. On the other hand, when the area ratio in which the terminal side surface is covered with the scooped solder increases, the amount of the solder remaining on the terminal side surface increases due to the surface tension, and it is suppressed that the solder scoops up to the upper surface of the sealing body. .

〔第二実施形態〕
第一実施形態と同様に、第二実施形態の半導体装置も、磁電変換機能を有する半導体素子としてホール素子を用いた磁気センサである。
［構成］
第二実施形態の磁気センサ１０１の構成は、封止体５０の形状およびリード端子２１〜２４の形状を除いて第一実施形態の磁気センサ１００と同じである。
図６に示すように、磁気センサ１０１の封止体５０は、略四角錐台で、四角錐台の四個の側面が凹状の放物面（変曲点のない曲面）となっている。つまり、封止体底面５１と封止体上面５２は互いに平行な相似の長方形であり、封止体底面５１は封止体上面５２より面積が大きい。封止体第一側面５３は、封止体底面５１および封止体上面５２をなす各長方形の長辺同士を接続する凹状の放物面である。封止体第二側面５４は、封止体底面５１および封止体上面５２をなす各長方形の短辺同士を接続する凹状の放物面である。 [Second Embodiment]
Similar to the first embodiment, the semiconductor device of the second embodiment is also a magnetic sensor using a Hall element as a semiconductor element having a magnetoelectric conversion function.
[Constitution]
The configuration of the magnetic sensor 101 of the second embodiment is the same as that of the magnetic sensor 100 of the first embodiment except for the shape of the sealing body 50 and the shapes of the lead terminals 21 to 24.
As shown in FIG. 6, the sealing body 50 of the magnetic sensor 101 is a substantially quadrangular pyramid, and the four side surfaces of the quadrangular pyramid are concave paraboloids (curved surfaces having no inflection points). That is, the sealing body bottom surface 51 and the sealing body top surface 52 are similar rectangles parallel to each other, and the sealing body bottom surface 51 has a larger area than the sealing body top surface 52. The sealing body first side surface 53 is a concave parabolic surface that connects the long sides of the respective rectangles forming the sealing body bottom surface 51 and the sealing body top surface 52. The sealing body second side surface 54 is a concave paraboloid that connects the short sides of the respective rectangles forming the sealing body bottom surface 51 and the sealing body top surface 52.

磁気センサ１０１のリード端子２１〜２４は、直方体の四側面のうち接触する二側面が端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂ側に向けて徐々に外側に張り出す凹状の放物面となった形状を有している。すなわち、端子外側面の全部（少なくとも一部）が、端子外側面の端子底面側の端部より外側に張り出している。リード端子２１〜２４において、その二側面が端子第一外側面２１ｃ〜２４ｃおよび端子第一外側面２１ｃ〜２４ｃである。
端子第一外側面２１ｃ〜２４ｃおよび端子第一外側面２１ｃ〜２４ｃは、リード端子２１〜２４の厚さ方向全体で、端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂ側に向けて立ち上がる立ち上がり面となっている。端子第一外側面２１ｃ〜２４ｃは、封止体第一側面５３の放物面に沿った放物面である。端子第二外側面２１ｄ〜２４ｄは、封止体第二側面５４の放物面に沿った放物面である。すなわち、リード端子２１〜２４の立ち上がり面である端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄは曲面である。 The lead terminals 21 to 24 of the magnetic sensor 101 are concave paraboloids in which two contacting side surfaces among the four side surfaces of the rectangular parallelepiped gradually project outward from the terminal bottom surfaces 21a to 24a toward the terminal top surfaces 21b to 24b. It has a different shape. That is, all (at least a part) of the terminal outer surface projects outward from the end of the terminal outer surface on the terminal bottom surface side. In the lead terminals 21 to 24, the two side surfaces are a terminal first outer side surface 21c to 24c and a terminal first outer side surface 21c to 24c.
The terminal first outer surfaces 21c to 24c and the terminal first outer surfaces 21c to 24c are rising surfaces that rise from the terminal bottom surfaces 21a to 24a toward the terminal upper surfaces 21b to 24b in the entire thickness direction of the lead terminals 21 to 24. It has become. The terminal first outer surfaces 21 c to 24 c are paraboloids along the paraboloid of the sealing body first side surface 53. The terminal second outer surfaces 21 d to 24 d are paraboloids along the paraboloid of the sealing body second side surface 54. That is, the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d, which are rising surfaces of the lead terminals 21 to 24, are curved surfaces.

これにより、平面視で、端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａを構成する辺（立ち上がり面である端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａ側の端部）Ｈ１は、端子第一外側面２１ｃ〜２４ｃの端子上面２１ｂ〜２４ｂを構成する辺（立ち上がり面である端子第一外側面２１ｃ〜２４ｃの端子上面２１ｂ〜２４ｂ側の端部）Ｈ２より内側にある。また、平面視で、端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａを構成する辺（立ち上がり面である端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａ側の端部）Ｈ３は、端子第二外側面２１ｄ〜２４ｄの端子上面２１ｂ〜２４ｂを構成する辺（立ち上がり面である端子第二外側面２１ｄ〜２４ｄの端子上面２１ｂ〜２４ｂ側の端部）Ｈ４より内側にある。辺Ｈ１〜Ｈ４はリード端子２３にのみ表示する。   Thereby, the side (end part by the side of the terminal bottom face 21a-24a of the terminal 1st outer side surface 21c-24c which is a standing surface) which comprises the terminal bottom face 21a-24a of the terminal 1st outer side face 21c-24c by planar view H1 Is located on the inner side of the sides (ends on the terminal upper surfaces 21b to 24b side of the terminal first outer surfaces 21c to 24c, which are rising surfaces) constituting the terminal upper surfaces 21b to 24b of the terminal first outer surfaces 21c to 24c. Further, in a plan view, the sides constituting the terminal bottom surfaces 21a to 24a of the terminal second outer surfaces 21d to 24d (end portions on the terminal bottom surfaces 21a to 24a side of the terminal second outer surfaces 21d to 24d which are rising surfaces) H3 are The sides constituting the terminal upper surfaces 21b to 24b of the terminal second outer surfaces 21d to 24d (ends on the terminal upper surfaces 21b to 24b side of the terminal second outer surfaces 21d to 24d, which are rising surfaces) are located inside the H4. The sides H1 to H4 are displayed only on the lead terminal 23.

端子第一外側面２１ｃ〜２４ｃを斜面に見做した平面Ｍ１と、端子底面２１ａ〜２４ａとのなす角度θ３は、例えば９５°であり、９０°より大きく１２０°以下であることが好ましい。子第二外側面２１ｄ〜２４ｄを斜面に見做した平面Ｍ２と、端子底面２１ａ〜２４ａとのなす角度θ４は、例えば１００°であり、９０°より大きく１２０°以下であることが好ましい。
平面Ｍ１は、端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａを構成する辺（第一の辺）Ｈ１と、端子第一外側面２１ｃ〜２４ｃの端子上面２１ｂ〜２４ｂ側の辺（第二の辺）Ｈ２と、を接続する仮想平面である。平面Ｍ２は、端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａを構成する辺（第一の辺）Ｈ３と、端子第二外側面２１ｄ〜２４ｄの端子上面２１ｂ〜２４ｂ側の辺（第二の辺）Ｈ４とを接続する仮想平面である。 An angle θ3 formed by the plane M1 in which the terminal first outer surfaces 21c to 24c are regarded as inclined surfaces and the terminal bottom surfaces 21a to 24a is, for example, 95 °, and preferably greater than 90 ° and equal to or less than 120 °. An angle θ4 formed by the plane M2 in which the child second outer side surfaces 21d to 24d are regarded as inclined surfaces and the terminal bottom surfaces 21a to 24a is, for example, 100 °, and preferably greater than 90 ° and 120 ° or less.
The plane M1 includes sides (first sides) H1 constituting the terminal bottom surfaces 21a to 24a of the terminal first outer surfaces 21c to 24c, and sides (first sides) of the terminal first outer surfaces 21c to 24c on the terminal upper surfaces 21b to 24b side. This is a virtual plane connecting the two sides H2. The plane M2 includes sides (first sides) H3 constituting the terminal bottom surfaces 21a to 24a of the terminal second outer surfaces 21d to 24d, and sides (first sides) of the terminal second outer surfaces 21d to 24d on the terminal upper surfaces 21b to 24b side. This is a virtual plane connecting the second side H4.

［製法］
図７に示すように、第二実施形態の磁気センサ１０１の製造方法は、結合体１００１の形成工程までは第一実施形態の磁気センサ１００と同じ方法である。
つまり、図３の工程と、図４（ａ）〜（ｄ）と同じ工程である図７（ａ）〜（ｄ）の工程を行った後、結合体１００１の切断工程で、図７（ｅ）に示すように、先端部７１が凸状の放物面７１ｂを有するダイシングブレードを使用する。この切断工程で、封止体第一側面５３、封止体第二側面５４、端子第一外側面２１ｃ〜２４ｃ、および端子第二外側面２１ｄ〜２４ｄは、ダイシングブレード７の先端部７１の凸状の放物面７１ｂに応じた凹状の放物面となる。 [Production method]
As shown in FIG. 7, the manufacturing method of the magnetic sensor 101 according to the second embodiment is the same as the magnetic sensor 100 according to the first embodiment until the step of forming the combined body 1001.
That is, after performing the process of FIG. 3 and the process of FIG. 7A to FIG. 7D which is the same process as FIG. ), A dicing blade having a convex paraboloid 71b is used. In this cutting step, the sealing body first side surface 53, the sealing body second side surface 54, the terminal first outer side surfaces 21 c to 24 c, and the terminal second outer side surfaces 21 d to 24 d are protruded from the tip portion 71 of the dicing blade 7. It becomes a concave paraboloid according to the paraboloid 71b.

［作用、効果］
この実施形態の磁気センサ１０１も、例えば図７に示すように、第一実施形態の磁気センサ１００と同様にして、プリント基板２５０の配線パターン２５１上に、リフロー方式の半田付けにより実装される。
この実施形態の磁気センサ１０１では、この半田付けで磁気センサ１００を配置した際に、端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂに向けて広がる凹状の放物面となっている端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄに沿って、半田ペーストが這い上がる。このとき、端子第一外側面２１ｃ〜２４ｃの端子底面２１ａ〜２４ａ側の少なくとも４０％以上、好ましくは５０％以上の領域が半田ペーストによって覆われる。また、端子第二外側面２１ｄ〜２４ｄの端子底面２１ａ〜２４ａ側の少なくとも４０％以上、好ましくは５０％以上の領域が半田ペーストによって覆われる。これにより、リード端子２１〜２４と配線パターン２５１とが、外装メッキ層６０が形成された端子底面２１ａ〜２４ａだけでなく、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄでも、半田７０により接着される。 [Action, effect]
For example, as shown in FIG. 7, the magnetic sensor 101 of this embodiment is mounted on the wiring pattern 251 of the printed circuit board 250 by reflow soldering in the same manner as the magnetic sensor 100 of the first embodiment.
In the magnetic sensor 101 of this embodiment, when the magnetic sensor 100 is arranged by this soldering, the terminal first outer surface is a concave parabolic surface that spreads from the terminal bottom surface 21a to 24a toward the terminal top surface 21b to 24b. The solder paste crawls up along the side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d. At this time, at least 40% or more, preferably 50% or more of the terminal first outer side surfaces 21c to 24c on the terminal bottom surface 21a to 24a side is covered with the solder paste. Further, at least 40% or more, preferably 50% or more of the terminal second outer side surfaces 21d to 24d on the terminal bottom surface 21a to 24a side is covered with the solder paste. Thereby, the lead terminals 21 to 24 and the wiring pattern 251 are not only the terminal bottom surfaces 21a to 24a on which the exterior plating layer 60 is formed, but also the terminal first outer side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d. Are bonded by solder 70.

そのため、この実施形態の磁気センサ１０１は、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが端子底面２１ａ〜２４ａに対して垂直なものと比較して、半田付けによる実装強度が高くなる。従って、この実施形態の磁気センサ１０１によれば、リード端子２１〜２４の端子底面２１ａ〜２４ａの合計面積が小さくても、半田付けによる十分な実装強度が確保できる。
また、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが凹状の放物面となっていることで、斜面となっている第一実施形態の磁気センサ１００よりも、半田ペーストがさらに這い上がり易くなるため、半田付けによる実装強度をより一層高くすることができる。 Therefore, in the magnetic sensor 101 of this embodiment, the mounting strength due to soldering is higher than that in which the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d are perpendicular to the terminal bottom surfaces 21a to 24a. Becomes higher. Therefore, according to the magnetic sensor 101 of this embodiment, even if the total area of the terminal bottom surfaces 21a to 24a of the lead terminals 21 to 24 is small, sufficient mounting strength by soldering can be ensured.
Also, the solder first paste is more effective than the magnetic sensor 100 of the first embodiment in which the terminal first outer side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d are concave paraboloids, thereby forming an inclined surface. However, the mounting strength by soldering can be further increased.

〔備考〕
第一および第二実施形態の磁気センサ１００，１０１では、断面視で、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄの両方が、端子底面２１ａ〜２４ａの端部より外側に張り出している。すなわち、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄの両方で、平面視で端子底面２１ａ〜２４ａの端部が端子上面２１ｂ〜２４ｂの端部より内側にある。しかしながら、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄの一方だけで、断面視で、端子外側面が端子底面２１ａ〜２４ａの端部より外側に張り出していて（すなわち、平面視で端子底面２１ａ〜２４ａの端部が端子上面２１ｂ〜２４ｂの端部より内側にあって）もよい。 [Remarks]
In the magnetic sensors 100 and 101 of the first and second embodiments, in the cross-sectional view, both the terminal first outer side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d are outside the end portions of the terminal bottom surfaces 21a to 24a. Overhangs. That is, in both the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d, the end portions of the terminal bottom surfaces 21a to 24a are inside the end portions of the terminal upper surfaces 21b to 24b in plan view. However, in only one of the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d, the terminal outer surface protrudes outward from the end portions of the terminal bottom surfaces 21a to 24a in the sectional view (that is, a plane surface). The end portions of the terminal bottom surfaces 21a to 24a may be inside the end portions of the terminal top surfaces 21b to 24b).

第一および第二実施形態の磁気センサ１００，１０１では、全てのリード端子２１〜２４で、平面視で端子底面２１ａ〜２４ａの端部が端子上面２１ｂ〜２４ｂの端部より内側にあるが、少なくとも一つがそのようになっていればよい。そのようになっているリード端子２１〜２４の数が多いほど、半田付けによる実装強度が高くなる。
第一および第二実施形態の磁気センサ１００，１０１では、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが、リード端子２１〜２４の厚さ方向全体で（つまり、端子外側面の全部が）、端子底面２１ａ〜２４ａから外側に張り出している。すなわち、リード端子２１〜２４の厚さ方向全体で、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが、端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂ側に向けて徐々に広がるように立ち上がる立ち上がり面となっている。 In the magnetic sensors 100 and 101 of the first and second embodiments, the end portions of the terminal bottom surfaces 21a to 24a are inside the end portions of the terminal top surfaces 21b to 24b in plan view in all the lead terminals 21 to 24. It is sufficient that at least one of them is such. As the number of the lead terminals 21 to 24 is increased, the mounting strength by soldering is increased.
In the magnetic sensors 100 and 101 of the first and second embodiments, the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d are formed in the entire thickness direction of the lead terminals 21 to 24 (that is, outside the terminals). All of the side surfaces) project outward from the terminal bottom surfaces 21a to 24a. That is, over the entire thickness direction of the lead terminals 21 to 24, the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d gradually move from the terminal bottom surfaces 21a to 24a toward the terminal upper surfaces 21b to 24b. It is a rising surface that rises up.

しかし、リード端子の厚さ方向で端子外側面の端子底面側の部分のみが端子上面２１ｂ〜２４ｂ側に向けて徐々に広がるように立ち上がる立ち上がり面であって、端子外側面の端子上面側の部分は立ち上がり面ではない場合もある。リード端子の厚さ方向で端子外側面の端子底面側の部分のみが端子上面２１ｂ〜２４ｂ側に向けて徐々に広がるように立ち上がる立ち上がり面であって、端子外側面の端子上面側の部分は立ち上がり面ではない場合もある。その例としては、リード端子の厚さ方向の任意の位置（例えば中間位置）が最も外側に突出している形状が挙げられる。
また、断面視で、端子外側面の一部が端子底面２１ａ〜２４ａから外側に張り出している形状の例として、端子外側面が、端子底面２１ａ〜２４ａから立ち上がる際に、一度、端子底面２１ａ〜２４ａから内側に入った後に、端子底面２１ａ〜２４ａから外側に張り出す形状も挙げられる。 However, only the portion on the terminal bottom surface side of the terminal outer surface in the thickness direction of the lead terminal is a rising surface that rises gradually toward the terminal upper surfaces 21b to 24b, and the portion on the terminal upper surface side of the terminal outer surface May not be a rising surface. In the thickness direction of the lead terminal, only the portion on the terminal bottom surface side of the terminal outer surface rises so as to gradually spread toward the terminal upper surfaces 21b to 24b, and the portion on the terminal upper surface side of the terminal outer surface rises It may not be a surface. As an example, there is a shape in which an arbitrary position (for example, an intermediate position) in the thickness direction of the lead terminal protrudes to the outermost side.
In addition, as an example of a shape in which a part of the terminal outer surface protrudes outward from the terminal bottom surfaces 21a to 24a in a cross-sectional view, when the terminal outer surface rises from the terminal bottom surfaces 21a to 24a, the terminal bottom surfaces 21a to 21 once. The shape which protrudes outside from terminal bottom face 21a-24a after entering inside from 24a is also mentioned.

第二実施形態の磁気センサ１０１では、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄの形状が凹状の放物面になっている。つまり、リード端子２１〜２４の厚さ方向全体で、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが端子底面２１ａ〜２４ａから端子上面２１ｂ〜２４ｂ側に向けて徐々に張り出すような立ち上がり面となっている。これに対して、端子外側面の端子上面側の部分が立ち上がり面ではない場合もある。立ち上がり面が曲面である形状の例としては、立ち上がり面である端子外側面の端子底面側の部分および立ち上がり面でない端子外側面の端子上面側の部分が共に外側に広がる放物面であって、リード端子の厚さ方向の中央部付近で放物面同士が接触して凸部を形成した形状が挙げられる。   In the magnetic sensor 101 of the second embodiment, the shapes of the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d are concave paraboloids. That is, over the entire thickness direction of the lead terminals 21 to 24, the terminal first outer surfaces 21c to 24c and the terminal second outer surfaces 21d to 24d are gradually stretched from the terminal bottom surfaces 21a to 24a toward the terminal upper surfaces 21b to 24b. It is a rising surface. On the other hand, the portion on the terminal upper surface side of the terminal outer surface may not be a rising surface. As an example of the shape in which the rising surface is a curved surface, the terminal bottom surface side portion of the terminal outer surface that is the rising surface and the terminal upper surface side portion of the terminal outer surface that is not the rising surface are both paraboloids that spread outward, A shape in which the paraboloids are in contact with each other in the vicinity of the central portion in the thickness direction of the lead terminal to form a convex portion can be mentioned.

第一および第二実施形態の磁気センサ１００，１０１では、端子第一外側面２１ｃ〜２４ｃが封止体第一側面５３と同一面内にあることで、端子第一外側面２１ｃ〜２４ｃが封止体第一側面５３において封止体５０から露出している。また、端子第二外側面２１ｄ〜２４ｄが封止体第二側面５４と同一面内にあることで、端子第二外側面２１ｄ〜２４ｄが封止体第二側面５４において封止体５０から露出している。しかし、各端子外側面は各封止体側面から露出していれば、各封止体側面と同一面内になくてもよい。例えば、各端子外側面は各封止体側面から突出した面であってもよいし、凹んだ面であってもよい。   In the magnetic sensors 100 and 101 of the first and second embodiments, the terminal first outer side surfaces 21c to 24c are sealed by the terminal first outer side surfaces 21c to 24c being in the same plane as the sealing body first side surface 53. The stationary body first side surface 53 is exposed from the sealing body 50. Further, since the terminal second outer surfaces 21d to 24d are in the same plane as the sealing body second side surface 54, the terminal second outer surfaces 21d to 24d are exposed from the sealing body 50 on the sealing body second side surface 54. doing. However, each terminal outer surface may not be in the same plane as each sealing body side surface as long as it is exposed from each sealing body side surface. For example, each terminal outer surface may be a surface protruding from each sealing body side surface, or may be a recessed surface.

第一および第二実施形態の磁気センサ１００，１０１では、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄの両方が封止体５０から露出しているが、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄのいずれかのみが封止体５０から露出していてもよい。
図９および図１０に示す例では、端子第一外側面２１ｃ〜２４ｃが封止体第一側面５３において封止体５０から露出し、端子第二外側面２１ｄ〜２４ｄは封止体第二側面５４において封止体５０から露出していない。この場合、端子第二外側面２１ｄ〜２４ｄは内側面２１ｅ〜２４ｅと同様に、端子底面２１ａ〜２４ａに対して垂直な面とする。 In the magnetic sensors 100 and 101 of the first and second embodiments, both the terminal first outer side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d are exposed from the sealing body 50. Only one of the side surfaces 21 c to 24 c and the terminal second outer side surfaces 21 d to 24 d may be exposed from the sealing body 50.
In the example shown in FIGS. 9 and 10, the terminal first outer side surfaces 21 c to 24 c are exposed from the sealing body 50 at the sealing body first side surface 53, and the terminal second outer side surfaces 21 d to 24 d are the sealing body second side surface. In 54, it is not exposed from the sealing body 50. In this case, the terminal second outer surfaces 21d to 24d are surfaces perpendicular to the terminal bottom surfaces 21a to 24a, similarly to the inner surfaces 21e to 24e.

図１１および図１２に示す例では、端子第一外側面２１ｃ〜２４ｃが封止体第一側面５３において封止体５０から露出せず、端子第二外側面２１ｄ〜２４ｄが封止体第二側面５４において封止体５０から露出している。この場合、端子第一外側面２１ｃ〜２４ｃは対向面２１ｆ〜２４ｆと同様に、端子底面２１ａ〜２４ａに対して垂直な面とする。
第二実施形態の磁気センサ１０１では、端子第一外側面２１ｃ〜２４ｃおよび端子第二外側面２１ｄ〜２４ｄが外側に向けて広がる凹状の放物面である場合について説明しているが、外側に向けて広がる凸状の放物面であってもよい。 In the example shown in FIGS. 11 and 12, the terminal first outer side surfaces 21 c to 24 c are not exposed from the sealing body 50 on the sealing body first side surface 53, and the terminal second outer side surfaces 21 d to 24 d are the sealing body second. The side surface 54 is exposed from the sealing body 50. In this case, the terminal first outer side surfaces 21c to 24c are surfaces perpendicular to the terminal bottom surfaces 21a to 24a, similarly to the opposing surfaces 21f to 24f.
In the magnetic sensor 101 of the second embodiment, the case where the terminal first outer side surfaces 21c to 24c and the terminal second outer side surfaces 21d to 24d are concave paraboloids spreading outward is described. It may be a convex paraboloid that spreads out.

第一および第二実施形態の磁気センサ１００，１０１は、ホール素子１０を載置するためのアイランド部を省いた構造（アイランドレス構造）を有するが、この発明の一態様は、ホール素子１０を載置するためのアイランド部を有する構造（アイランド構造）にも適用できる。
なお、この発明の一態様の半導体装置は上記構成要件(1)〜(6)を有するものであるが、上記構成要件(1)〜(5)と下記の構成要件(7)を有するものもこの発明の態様に含まれる。
(7)端子外側面は端子底面から端子上面側に向けて立ち上がる立ち上がり面を有し、立ち上がり面は、平面視で、端子底面側の端部が端子上面側の端部より内側にある。 The magnetic sensors 100 and 101 according to the first and second embodiments have a structure (islandless structure) in which an island portion for mounting the Hall element 10 is omitted. The present invention can also be applied to a structure having an island portion for mounting (island structure).
The semiconductor device according to one aspect of the present invention has the above-described structural requirements (1) to (6), but the semiconductor device having the above-described structural requirements (1) to (5) and the following structural requirements (7) It is contained in the aspect of this invention.
(7) The terminal outer surface has a rising surface that rises from the terminal bottom surface toward the terminal upper surface side, and the rising surface has an end on the terminal bottom surface side inside the end on the terminal upper surface side in plan view.

１００ 磁気センサ（半導体装置）
１０１ 磁気センサ（半導体装置）
１０ ホール素子（半導体素子）
１２ 活性層
１３ａ〜１３ｄ 電極
２１〜２４ リード端子
２１ａ〜２４ａ リード端子の端子底面
２１ｂ〜２４ｂ リード端子の端子上面
２１ｃ〜２４ｃ リード端子の端子第一外側面（端子外側面、立ち上がり面）
２１ｄ〜２４ｄ リード端子の端子第二外側面（端子外側面、立ち上がり面）
２１ｅ〜２４ｅ リード端子の内側面
２１ｆ〜２４ｆ リード端子の対向面
１２０ リードフレーム
３１〜３４ 金属細線
４０ 絶縁層
５０ 封止体
５１ 封止体底面
５２ 封止体上面
５３ 封止体第一側面（封止体側面）
５４ 封止体第二側面（封止体側面）
６０ 外装メッキ層
Ｈ１ 端子第一外側面の端子底面を構成する辺（立ち上がり面の端子底面側の端部）
Ｈ２ 端子第一外側面の端子上面を構成する辺（立ち上がり面の端子上面側の端部）
Ｈ３ 端子第二外側面の端子底面を構成する辺（立ち上がり面の端子底面側の端部）
Ｈ４ 端子第二外側面の端子上面を構成する辺（立ち上がり面の端子上面側の端部）
Ｍ１ 辺Ｈ１と辺Ｈ２を接続する仮想平面
Ｍ２ 辺Ｈ３と辺Ｈ４を接続する仮想平面
Ｔ２ｃ 端子第一外側面の端子底面に垂直な方向の寸法
Ｔ２ｄ 端子第二外側面の端子底面に垂直な方向の寸法
Ｔ５ｃ，Ｔ５ｄ 封止体底面と封止体上面との最短距離
θ１ 端子第一外側面と端子底面とのなす角度
θ２ 端子第二外側面と端子底面とのなす角度
θ３ 平面Ｍ１と端子底面とのなす角度
θ４ 平面Ｍ２と端子底面とのなす角度 100 Magnetic sensor (semiconductor device)
101 Magnetic sensor (semiconductor device)
10 Hall element (semiconductor element)
12 Active layer 13a-13d Electrode 21-24 Lead terminal 21a-24a Terminal bottom surface of lead terminal 21b-24b Terminal top surface of lead terminal 21c-24c Terminal first outer surface (terminal outer surface, rising surface) of lead terminal
21d-24d Terminal second outer surface of lead terminal (terminal outer surface, rising surface)
21e to 24e Lead terminal inner surface 21f to 24f Lead terminal facing surface 120 Lead frame 31 to 34 Metal fine wire 40 Insulating layer 50 Sealing body 51 Sealing body bottom surface 52 Sealing body top surface 53 Sealing body first side surface (sealing Side of stationary body)
54 Sealing body second side surface (sealing body side surface)
60 exterior plating layer H1 side constituting terminal bottom surface of first outer surface of terminal (end of terminal bottom surface side of rising surface)
Side that constitutes the terminal upper surface of the H2 terminal first outer surface (the end of the rising surface on the terminal upper surface side)
The side that forms the bottom of the terminal on the second outer surface of the H3 terminal (the end of the rising surface on the terminal bottom side)
Side that constitutes the upper surface of the terminal on the H4 terminal second outer surface (the end of the rising surface on the terminal upper surface side)
M1 Virtual plane connecting side H1 and side H2 M2 Virtual plane connecting side H3 and side H4 T2c Dimensions in the direction perpendicular to the terminal bottom surface of the terminal first outer surface T2d Direction perpendicular to the terminal bottom surface of the terminal second outer surface Dimensions T5c, T5d The shortest distance between the bottom surface of the sealing body and the top surface of the sealing body θ1 The angle formed between the first outer surface of the terminal and the bottom surface of the terminal θ2 The angle formed between the second outer surface of the terminal and the bottom surface of the terminal θ3 The plane M1 and the bottom surface of the terminal The angle between θ4 plane M2 and terminal bottom

Claims (10)

磁電変換機能を有し、複数の電極を備えた半導体素子と、
平面視で前記半導体素子の周囲に配置された複数のリード端子と、
前記半導体素子の前記複数の電極と前記複数のリード端子とを、それぞれ電気的に接続する複数の導体と、
前記半導体素子、前記リード端子、および前記複数の導体を封止する封止体であって、実装側の面である封止体底面、前記封止体底面の反面である封止体上面、および前記封止体底面の端部から前記封止体上面の端部に至る封止体側面を有する封止体と、
を備え、
前記複数のリード端子の少なくとも一つは、前記封止体底面において前記封止体から露出する端子底面、前記端子底面の反面である端子上面、および前記封止体側面において前記封止体から露出する端子外側面を有し、
断面視で、前記端子外側面の少なくとも一部は、前記端子底面の端部より外側に張り出している半導体装置。 A semiconductor element having a magnetoelectric conversion function and having a plurality of electrodes;
A plurality of lead terminals arranged around the semiconductor element in plan view;
A plurality of conductors electrically connecting the plurality of electrodes of the semiconductor element and the plurality of lead terminals, respectively;
A sealing body for sealing the semiconductor element, the lead terminal, and the plurality of conductors, the bottom surface of the sealing body being a surface on the mounting side, the top surface of the sealing body being the opposite side of the bottom surface of the sealing body, and A sealing body having a sealing body side surface extending from an end portion of the bottom surface of the sealing body to an end portion of the top surface of the sealing body;
With
At least one of the plurality of lead terminals is exposed from the sealing body at the bottom surface of the sealing body exposed from the sealing body, a terminal top surface opposite to the terminal bottom surface, and a side surface of the sealing body. A terminal outer surface to
A semiconductor device in which at least a part of the outer surface of the terminal protrudes outward from an end portion of the terminal bottom surface in a cross-sectional view. 前記端子外側面は平面または曲面である請求項１記載の半導体装置。   The semiconductor device according to claim 1, wherein the terminal outer surface is a flat surface or a curved surface. 前記複数のリード端子の前記端子底面の合計面積は０．０８ｍｍ2未満である請求項１または２記載の半導体装置。 The semiconductor device according to claim 1, wherein a total area of the bottom surfaces of the plurality of lead terminals is less than 0.08 mm 2 . 前記封止体は合成樹脂を含む材料で形成されている請求項１〜３のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the sealing body is made of a material containing a synthetic resin. 前記リード端子の厚さは１１０μｍ以下である請求項１〜４のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the lead terminal has a thickness of 110 μm or less. 前記封止体の厚さは２３０μｍ未満である請求項１〜５のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein a thickness of the sealing body is less than 230 μm. 前記端子外側面は平面であり、前記端子外側面と前記端子底面とのなす角度が９０°より大きく１２０°以下である請求項１〜６のいずれか一項に記載の半導体装置。   The semiconductor device according to claim 1, wherein the terminal outer surface is a flat surface, and an angle formed between the terminal outer surface and the terminal bottom surface is greater than 90 ° and equal to or less than 120 °. 前記端子外側面は曲面であり、
前記端子外側面は、前記端子底面を構成する第一の辺および前記端子上面側の辺である第二の辺を有し、
前記第一の辺と前記第二の辺とを接続する仮想平面と、前記端子底面と、のなす角度が９０°より大きく１２０°以下である請求項１〜７のいずれか一項に記載の半導体装置。 The terminal outer surface is a curved surface,
The terminal outer surface has a first side that constitutes the terminal bottom surface and a second side that is a side on the terminal upper surface side,
The angle formed by a virtual plane connecting the first side and the second side and the terminal bottom surface is greater than 90 ° and equal to or less than 120 °. Semiconductor device. 前記端子底面に形成された外装メッキ層を有する請求項１〜８のいずれか一項に記載の半導体装置。   The semiconductor device as described in any one of Claims 1-8 which has the exterior plating layer formed in the said terminal bottom face. 前記半導体素子は、前記複数の電極が電気的に接続された活性層と、前記活性層が形成された基板とを有し、
前記基板の前記活性層とは反対側の面である裏面が前記封止体底面から露出している、または前記裏面に形成された保護層が前記封止体底面から露出している請求項１〜９のいずれか一項に記載の半導体装置。 The semiconductor element has an active layer in which the plurality of electrodes are electrically connected, and a substrate on which the active layer is formed,
The back surface which is a surface on the opposite side to the said active layer of the said board | substrate is exposed from the said sealing body bottom face, or the protective layer formed in the said back surface is exposed from the said sealing body bottom face. The semiconductor device as described in any one of -9.
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JP2011129687A (en) * 2009-12-17 2011-06-30 Dainippon Printing Co Ltd Lead frame and method for manufacturing the same, and semiconductor device and method for manufacturing the same
JP2014007287A (en) * 2012-06-25 2014-01-16 Renesas Electronics Corp Semiconductor device manufacturing method
JP2014236168A (en) * 2013-06-04 2014-12-15 ルネサスエレクトロニクス株式会社 Semiconductor device and semiconductor device manufacturing method
JP2016021549A (en) * 2014-06-17 2016-02-04 旭化成エレクトロニクス株式会社 Hall sensor

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JP2000294715A (en) * 1999-04-09 2000-10-20 Hitachi Ltd Semiconductor device and manufacture thereof
JP2001077277A (en) * 1999-09-03 2001-03-23 Sony Corp Semiconductor package and its manufacture
JP2011129687A (en) * 2009-12-17 2011-06-30 Dainippon Printing Co Ltd Lead frame and method for manufacturing the same, and semiconductor device and method for manufacturing the same
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