JP2006165411A - Semiconductor device and manufacturing method thereof - Google Patents

Semiconductor device and manufacturing method thereof Download PDF

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JP2006165411A
JP2006165411A JP2004357590A JP2004357590A JP2006165411A JP 2006165411 A JP2006165411 A JP 2006165411A JP 2004357590 A JP2004357590 A JP 2004357590A JP 2004357590 A JP2004357590 A JP 2004357590A JP 2006165411 A JP2006165411 A JP 2006165411A
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external connection
sealing resin
semiconductor element
connection electrode
semiconductor device
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Michiya Takahashi
通哉 高橋
Noritoshi Fujita
紀憲 藤田
Kazuya Matsumoto
和弥 松本
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New Japan Radio Co Ltd
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New Japan Radio Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device whose structure is small-sized and does not prevent its highly dense mounting, and to provide its manufacturing method by forming its each solder fillet portion more internally than the external shape of its resin package, while enabling to so form its each solder fillet on the side surface of its each external connecting electrode as to be able to identify simply its soldering state to a mounting substrate. <P>SOLUTION: A semiconductor element 1 is die-bonded to surface of a die pad 4 formed out of a lead frame, and each electrode pad of the semiconductor element 1 is connected electrically with each external connecting electrode 3, and further, the die pad 4 and the side of the semiconductor 1 of each external connecting electrode 3 are coated with a sealing resin 5. Then, bonding metal films 6 are provided on the exposed surfaces of the die pad 4, etc., inclusive of the external side-surface of each external connecting electrode 3. In addition, the external side-surface of each external connecting electrode 3 is so formed as to position it more internally than each side-surface of the sealing resin 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、樹脂パッケージからリードが伸びないで、外部接続用電極が樹脂パッケージから露出する構造の、いわゆるリードレスパッケージタイプの半導体装置およびその製造方法に関する。さらに詳しくは、高密度化実装に適した封止樹脂の外形より外部接続用電極が内側に形成されながら、実装基板にハンダ付けした場合にハンダフィレットが形成され、ハンダ付け性を容易に確認することができる構造の半導体装置およびその製造方法に関する。   The present invention relates to a so-called leadless package type semiconductor device having a structure in which leads are not extended from a resin package and an external connection electrode is exposed from the resin package, and a method of manufacturing the same. More specifically, a solder fillet is formed when soldering to the mounting board while the external connection electrode is formed on the inside from the outer shape of the sealing resin suitable for high-density mounting, and solderability is easily confirmed. The present invention relates to a semiconductor device having such a structure and a method for manufacturing the same.

ＰＤＡ、携帯電話機などの高機能化に伴い、半導体装置を含む電子部品の高密度実装化が大きく要望されている。この電子部品の高密度実装化に当り、半導体装置はＱＦＰに代表されるリードタイプパッケージからＱＦＮに代表されるリードレスパッケージ化に移りつつある。このようなリードレスパッケージの半導体装置は、たとえば図４に示されるような構造になっている。   With higher functionality of PDAs, mobile phones, and the like, there is a great demand for high-density mounting of electronic components including semiconductor devices. In order to achieve high-density mounting of electronic components, semiconductor devices are shifting from lead type packages represented by QFP to leadless packages represented by QFN. Such a leadless package semiconductor device has a structure as shown in FIG. 4, for example.

すなわち、ダイパッド４（半導体素子載置部）上に半導体素子（チップ）１がダイボンディングされ、半導体素子１の電極が外部接続用電極３と金線などのワイヤ２により接続され、半導体素子１がダイボンディングされた表面側周囲が封止樹脂５により被覆されている。外部接続用電極３およびダイパッド４の裏面（露出面）には、Ｎｉ薄膜層と金や金合金などのハンダの乗りやすい接着用金属膜６が設けられており、実装基板９などに直接ハンダ７により接続することができるように形成されている。その結果、リードやハンダ材などが半導体装置の外形から外側に形成されることがなく、非常に高密度に実装することができる（たとえば特許文献１参照）。
特開２００２−１６１８１号公報 That is, a semiconductor element (chip) 1 is die-bonded on a die pad 4 (semiconductor element mounting portion), an electrode of the semiconductor element 1 is connected to an external connection electrode 3 by a wire 2 such as a gold wire, and the semiconductor element 1 is The periphery of the die-bonded surface side is covered with a sealing resin 5. On the back surface (exposed surface) of the external connection electrode 3 and the die pad 4, an Ni thin film layer and a metal film 6 for adhesion such as gold or gold alloy that can be easily carried by solder are provided. It is formed so that it can be connected by. As a result, leads and solder materials are not formed outside the outer shape of the semiconductor device, and can be mounted at a very high density (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 2002-16181

前述のような構成では、複数個の半導体装置用のダイパッド４および外部接続用電極３が形成されたリードフレーム等の実装用基材上に半導体素子１を複数個マウントし、複数個の半導体素子１の全体を封止樹脂５で被覆してから切断して各半導体装置が製造されるため、外部接続用電極３の側面には接着剤、たとえばハンダの乗りやすい接着用金属膜が形成されておらず、外部接続用電極３の側面にはハンダが乗らず、いわゆるハンダフィレットが形成されない。したがって、実装基板９にハンダ付けした後に接着状態をチェックする場合に、接着部分が実装基板と外部接続用電極との接触面だけになるため、接着状態の視認性が悪く、検査が困難であるという問題がある。   In the configuration as described above, a plurality of semiconductor elements 1 are mounted on a mounting substrate such as a lead frame on which a plurality of die pads 4 for semiconductor devices and external connection electrodes 3 are formed. 1 is coated with a sealing resin 5 and then cut to manufacture each semiconductor device. Therefore, an adhesive, for example, an adhesive metal film on which solder can be easily applied is formed on the side surface of the external connection electrode 3. In addition, no solder is placed on the side surface of the external connection electrode 3, and so-called solder fillets are not formed. Therefore, when the adhesion state is checked after soldering to the mounting substrate 9, the adhesion portion is only the contact surface between the mounting substrate and the external connection electrode, so the visibility of the adhesion state is poor and inspection is difficult. There is a problem.

本発明は、このような問題を解決するためになされたもので、実装基板への接着状態を簡単に確認することができるように、外部接続用電極の側面にハンダフィレットを形成し得るようにしながら、ハンダフィレット部が半導体装置の樹脂パッケージ（封止樹脂）の外形より内側に形成されるようにして、小型で高密度実装化の妨げとならないような構造の半導体装置およびその製造方法を提供することを目的とする。   The present invention has been made to solve such a problem, and enables solder fillets to be formed on the side surfaces of the external connection electrodes so that the state of adhesion to the mounting substrate can be easily confirmed. However, the semiconductor fillet portion is formed inside the outer shape of the resin package (sealing resin) of the semiconductor device, and a semiconductor device having a structure that is small and does not hinder high-density mounting and a method for manufacturing the same are provided. The purpose is to do.

本発明による半導体装置は、半導体素子載置部の一面に載置された半導体素子と、該半導体素子の電極と電気的に接続する外部接続用電極と、前記一面に載置された前記半導体素子を被覆する封止樹脂部とを具備し、前記外部接続用電極の外側側面を含めた露出面に接着用金属膜が設けられ、かつ、前記外側側面部が前記封止樹脂部の側面より内側に位置することを特徴とする。   The semiconductor device according to the present invention includes a semiconductor element mounted on one surface of a semiconductor element mounting portion, an external connection electrode electrically connected to an electrode of the semiconductor element, and the semiconductor element mounted on the one surface. And an adhesive metal film is provided on the exposed surface including the outer side surface of the external connection electrode, and the outer side surface portion is on the inner side of the side surface of the sealing resin portion. It is located in.

ここに「外部接続用電極の外側側面」とは、外部接続用電極が半導体装置の外周側を向いた側面（外部接続用電極の厚さ方向の面）を意味し、また、「封止樹脂部の側面より内側」とは、封止樹脂の外周側面よりも半導体装置の中心側であることを意味し、さらに「接着用金属膜が設けられる」とは、ハンダ等の接着剤がなじんで表面に乗りやすい金属膜が少なくとも表面に設けられることを意味し、その間に中間金属層など他の金属膜が設けられることを排除するものではない。   Here, the “outer side surface of the external connection electrode” means the side surface (surface in the thickness direction of the external connection electrode) in which the external connection electrode faces the outer peripheral side of the semiconductor device. "Inside from the side surface of the part" means that it is closer to the center side of the semiconductor device than the outer peripheral side surface of the sealing resin, and further "to be provided with an adhesive metal film" means that an adhesive such as solder is familiar. This means that a metal film that is easy to ride on the surface is provided on at least the surface, and it does not exclude that another metal film such as an intermediate metal layer is provided therebetween.

本発明による半導体装置の製造方法は、複数個の半導体素子載置部および外部接続用電極を、隣接する半導体装置の外部接続用電極が連続するように配置した実装用基材を作製し、該実装用基材の前記半導体素子載置部に、それぞれ半導体素子を載置し、該半導体素子の電極を前記外部接続用電極に電気的に接続し、前記実装用基材の前記半導体素子を載置した一面を封止樹脂により被覆し、前記実装用基材の他面側から、前記封止樹脂を残し、前記連続する外部接続用電極を切断し、該切断により露出した側面部を含めた前記外部接続用電極の露出面に接着用金属膜を設け、前記封止樹脂を前記切断の切断幅より狭い幅で切断し、前記外部接続用電極の外側側面部が封止樹脂部の側面より内側に位置するように個片化することを特徴とする。   A method of manufacturing a semiconductor device according to the present invention includes a mounting substrate in which a plurality of semiconductor element mounting portions and external connection electrodes are arranged so that external connection electrodes of adjacent semiconductor devices are continuous, A semiconductor element is mounted on the semiconductor element mounting portion of the mounting substrate, the electrodes of the semiconductor element are electrically connected to the external connection electrodes, and the semiconductor element of the mounting substrate is mounted. The placed one surface was covered with a sealing resin, and from the other surface side of the mounting substrate, the sealing resin was left, the continuous external connection electrodes were cut, and the side portions exposed by the cutting were included. An adhesive metal film is provided on the exposed surface of the external connection electrode, the sealing resin is cut with a width narrower than the cutting width of the cutting, and the outer side surface portion of the external connection electrode is from the side surface of the sealing resin portion. It is divided into pieces so as to be located inside

ここに「外部接続用電極を切断し」とは、外部接続用電極のみを正確に切断することに限定されず、その厚さを越えて封止樹脂の一部を切断してもよいことを意味し、また「切断幅より狭い幅で切断し」とは、個片化のための封止樹脂部を切断する場合の溝幅が、外部接続用電極を切断する場合の溝幅より狭いことを意味し、たとえばダイシングブレードで切断する場合には、そのブレードの厚さの薄いものを用いることにより狭く形成することができる。   Here, “cutting the external connection electrode” is not limited to accurately cutting only the external connection electrode, but may cut a part of the sealing resin beyond its thickness. It means that the groove width when cutting the sealing resin part for singulation is narrower than the groove width when cutting the electrode for external connection. For example, in the case of cutting with a dicing blade, it can be formed narrow by using a thin blade.

本発明の半導体装置によれば、接着用金属膜が外部接続用電極の外側側面にも設けられているため、実装基板などにハンダ付けする場合でも、外部接続用電極の外側側面にハンダがはい上がり、ハンダフィレットが形成される。しかも、その側面は封止樹脂の側面よりも内側に形成されているため、ハンダフィレットが形成されても封止樹脂の側面より外側にはみ出すことはない。その結果、実装基板などへの接着強度を強くすることができるとともに、その接着性をチェックする場合でも、ハンダフィレットが形成されていれば接着剤がよく流れていることを意味し、一目でその接着状態を確認することができるとともに、そのハンダフィレットは封止樹脂のパッケージより内側に形成されているため、半導体装置を実装基板などに高密度実装化する場合でも、隣接する電子部品とのショートなどの問題を全く生じさせることはなく、高密度実装化になんらの支障を来たさない。   According to the semiconductor device of the present invention, the adhesive metal film is also provided on the outer side surface of the external connection electrode. Therefore, even when soldering to a mounting board or the like, solder is applied to the outer side surface of the external connection electrode. The solder fillet is formed. And since the side surface is formed inside the side surface of sealing resin, even if a solder fillet is formed, it does not protrude outside the side surface of sealing resin. As a result, the adhesive strength to the mounting substrate can be increased, and even when checking the adhesiveness, it means that if the solder fillet is formed, the adhesive flows well. The adhesion state can be confirmed, and the solder fillet is formed on the inner side of the sealing resin package. Therefore, even when a semiconductor device is mounted on a mounting board or the like at high density, it is short-circuited with an adjacent electronic component. This does not cause any problems such as high density mounting.

さらに、本発明の製造方法によれば、外部接続用電極を切断することによりその側面を露出させ、接着用金属膜を無電解メッキなどにより設けた後に、その切断幅よりも幅の狭い切断方法で封止樹脂部を切断して個片化しているため、外部接続用電極の側面を封止樹脂の側面よりも内側にしながらその側面に接着用金属膜を、非常に簡単な方法で設けることができる。その結果、高密度実装化に適した半導体装置で、かつ、接着性の検査を非常に容易に行うことができる半導体装置を簡単に製造することができる。   Furthermore, according to the manufacturing method of the present invention, the external connection electrode is cut to expose its side surface, and the adhesive metal film is provided by electroless plating or the like, and then the cutting method is narrower than the cutting width. Since the sealing resin part is cut and separated into individual pieces, the side surface of the electrode for external connection is made inward of the side surface of the sealing resin, and an adhesive metal film is provided on the side surface by a very simple method. Can do. As a result, it is possible to easily manufacture a semiconductor device that is suitable for high-density mounting and that can perform an adhesion test very easily.

つぎに、図面を参照しながら本発明の半導体装置について説明をする。本発明による半導体装置は、図１にその一実施形態である半導体装置を実装基板にマウントした状態を示す断面説明図が示されるように、たとえばリードフレームからなる実装用基材に形成されたダイパッド４（半導体素子載置部）の一面に半導体素子（チップ）１がダイボンディングされ、その半導体素子１の図示しない電極と外部接続用電極３とが、たとえば金線などのワイヤ２により電気的に接続され、そのダイパッド４および外部接続用電極３の半導体素子１側が封止樹脂５により被覆されている。本発明では、外部接続用電極３の外側側面を含めた露出面に接着用金属膜６が設けられるとともに、外部接続用電極３の外側側面が封止樹脂５の側面より内側に位置するように形成されていることに特徴がある。   Next, the semiconductor device of the present invention will be described with reference to the drawings. A semiconductor device according to the present invention has a die pad formed on a mounting substrate made of a lead frame, for example, as shown in FIG. 1 which is a cross-sectional explanatory view showing a state in which the semiconductor device according to the embodiment is mounted on a mounting substrate. A semiconductor element (chip) 1 is die-bonded on one surface of 4 (semiconductor element mounting portion), and an electrode (not shown) of the semiconductor element 1 and an external connection electrode 3 are electrically connected by a wire 2 such as a gold wire. The semiconductor device 1 side of the die pad 4 and the external connection electrode 3 is covered with a sealing resin 5. In the present invention, the adhesion metal film 6 is provided on the exposed surface including the outer side surface of the external connection electrode 3, and the outer side surface of the external connection electrode 3 is positioned more inside than the side surface of the sealing resin 5. It is characterized by being formed.

半導体素子１は、たとえば通常のシリコン基板などに電子回路が形成され、四角形状にチップ化されたものが用いられるが、これに限定されるものではない。一般的には、この半導体素子１の表面の対向する２辺側または周囲の４辺側に図示しない電極が形成され、たとえば四角形状のダイパッド４上にダイボンディングされている。   As the semiconductor element 1, for example, an electronic circuit formed on a normal silicon substrate or the like and formed into a square chip is used. However, the semiconductor element 1 is not limited to this. In general, electrodes (not shown) are formed on the two opposite sides or the surrounding four sides of the surface of the semiconductor element 1 and are die-bonded on, for example, a square die pad 4.

ダイパッド４は、外部接続用電極３とともに、たとえば銅またはニッケルなどからなり、０.１〜０.２ｍｍ程度厚のリードフレームの枠体に接続して一体的に形成され、複数個の半導体装置用のものが連続して形成されている。外部接続用電極３は、ダイパッド４の周囲に設けられて、ダイパッド４の対向する２辺側に引き出されていてもよいし、ダイパッド４の４辺と垂直方向に延出される構造でもよい。しかし、リードフレームで複数のダイパッド４が並ぶ方向に延出される外部接続用電極３は、隣接する半導体装置用の外部接続用電極３と連続して形成され、個片化の際に切断分離される。このダイパッド４および外部接続用電極は、リードフレームから形成されなくても、たとえば金属板などの支持体上に金属層で形成され、その後に支持体が除去されたものでもよい。また、ダイパッド４と外部接続用電極３とは、同一面に形成されていてもよいし、たとえばダイパッドが外部接続用電極３よりも高く形成され、ダイパッド４はその裏面も封止樹脂５により被覆される構造でもよい。   The die pad 4 is made of, for example, copper or nickel together with the external connection electrode 3 and is integrally formed by connecting to a frame of a lead frame having a thickness of about 0.1 to 0.2 mm, for a plurality of semiconductor devices. Are formed continuously. The external connection electrode 3 may be provided around the die pad 4 and may be led out to the two opposite sides of the die pad 4 or may be extended in a direction perpendicular to the four sides of the die pad 4. However, the external connection electrode 3 extending in the direction in which the plurality of die pads 4 are arranged in the lead frame is formed continuously with the external connection electrode 3 for the adjacent semiconductor device, and is cut and separated during separation. The The die pad 4 and the external connection electrode may not be formed of a lead frame, but may be formed of a metal layer on a support such as a metal plate and the support removed thereafter. The die pad 4 and the external connection electrode 3 may be formed on the same surface. For example, the die pad is formed higher than the external connection electrode 3, and the back surface of the die pad 4 is covered with the sealing resin 5. It may be a structure.

図１に示される例では、ダイパッド４の裏面と、外部接続用電極３の裏面および外側に面する側面とに、接着用金属膜６が設けられている。この接着用金属膜６は、たとえば無電解メッキにより形成され、接着剤がハンダの場合、ニッケル膜と金膜とにより形成される。すなわち、最表面にはハンダがなじみやすいＡｕやＳｎまたはこれらを含む合金などの金属膜が設けられるが、その下側にはそのＡｕやＳｎなどを被着させやすい中間層が設けられてもよい。   In the example shown in FIG. 1, an adhesive metal film 6 is provided on the back surface of the die pad 4 and the side surface facing the back surface and the outside of the external connection electrode 3. The bonding metal film 6 is formed by, for example, electroless plating, and is formed by a nickel film and a gold film when the adhesive is solder. That is, the outermost surface is provided with a metal film such as Au, Sn, or an alloy containing these, which is easily compatible with solder, but an intermediate layer on which the Au, Sn, etc. can be easily deposited is provided below. .

半導体素子１の電極と外部接続用電極３との電気的接続は、一般的には図１に示されるように、金線などのワイヤ２によりワイヤボンディングされるが、ワイヤによる接続には限定されない。このダイパッド４上の半導体素子１やワイヤ２の部分を被覆するように、たとえばエポキシ樹脂などからなる封止樹脂５が設けられている。この封止樹脂５の外形は、電子部品の小型化要請に応じ最小限の大きさに形成され、本発明でも従来と同じ最小限の大きさに形成されているが、本発明では、外部接続用電極３の外側側面３ａ、すなわち半導体装置の外周側の側面が、この封止樹脂５の側面５ａよりも内側（半導体装置の中心側）に位置するように形成されている。   The electrical connection between the electrode of the semiconductor element 1 and the external connection electrode 3 is generally wire-bonded by a wire 2 such as a gold wire as shown in FIG. 1, but is not limited to the connection by a wire. . A sealing resin 5 made of, for example, an epoxy resin is provided so as to cover the semiconductor element 1 and the wire 2 on the die pad 4. The outer shape of the sealing resin 5 is formed to a minimum size in response to a request for downsizing of electronic components. In the present invention, the outer shape of the sealing resin 5 is the same as the conventional minimum size. The outer side surface 3 a of the electrode 3, that is, the outer side surface of the semiconductor device is formed so as to be located on the inner side (center side of the semiconductor device) than the side surface 5 a of the sealing resin 5.

このような半導体装置は、図１に示されるように、図示しない配線が形成された実装基板９の配線上に、接着剤としてハンダ材７が塗布されて載置され、加熱することにより実装基板９にハンダ付けされる。この際、図１に示されるように、外部接続用電極３の外側側面３ａにも接着用金属膜６が設けられているため、ハンダ材７がはい上がり、ハンダフィレット７ａが形成される。しかも、外部接続用電極３の外側側面３ａが封止樹脂５の側面５ａよりも内側になるように形成されているため、ハンダフィレット７ａは封止樹脂５の側面５ａすなわち樹脂パッケージの内側に形成される。その結果、高密度実装化ができ、しかも接着性の検査を簡単で確実に行うことができる。   As shown in FIG. 1, such a semiconductor device is mounted on a wiring of a mounting substrate 9 on which a wiring (not shown) is formed by applying a solder material 7 as an adhesive and heating the mounting substrate 9. Soldered to 9. At this time, as shown in FIG. 1, the bonding metal film 6 is also provided on the outer side surface 3a of the external connection electrode 3, so that the solder material 7 is lifted up and a solder fillet 7a is formed. Moreover, since the outer side surface 3a of the external connection electrode 3 is formed so as to be inside the side surface 5a of the sealing resin 5, the solder fillet 7a is formed on the side surface 5a of the sealing resin 5, that is, inside the resin package. Is done. As a result, high-density mounting can be achieved, and the adhesion test can be easily and reliably performed.

この外部接続用電極３の外側側面３ａ（接着用金属膜６の表面）を封止樹脂５の側面５ａよりも内側に形成するには、たとえば後述する製造方法で述べるように、あらかじめ厚いダイシングブレードにより、隣接する半導体装置に連続している外部接続用電極３を切断し、その後に薄いダイシングブレードで封止樹脂を切断して個片化することにより、簡単に形成することができる。   In order to form the outer side surface 3a (the surface of the bonding metal film 6) of the external connection electrode 3 on the inner side of the side surface 5a of the sealing resin 5, for example, as described in a manufacturing method described later, a thick dicing blade is used in advance. Thus, the external connection electrode 3 continuous to the adjacent semiconductor device is cut, and the sealing resin is then cut into pieces by a thin dicing blade.

つぎに、図２〜３を参照しながら、この半導体装置の製造方法について説明をする。まず、図２（ａ）に示されるように、金属板に複数個の半導体装置用のダイパッド４および外部接続用電極３を、隣接する半導体装置用の外部接続用電極３が連続するように形成したリードフレームを作製し、そのリードフレームの各ダイパッド４の一面にそれぞれ半導体素子１をダイボンディングする。そして、その半導体素子１のそれぞれの電極（図示せず）を外部接続用電極３と、たとえば金線などのワイヤ２により電気的に接続する。   Next, a method for manufacturing this semiconductor device will be described with reference to FIGS. First, as shown in FIG. 2A, a plurality of die pads 4 for semiconductor devices and external connection electrodes 3 are formed on a metal plate so that adjacent external connection electrodes 3 for semiconductor devices are continuous. Then, the semiconductor element 1 is die-bonded to one surface of each die pad 4 of the lead frame. Each electrode (not shown) of the semiconductor element 1 is electrically connected to the external connection electrode 3 by a wire 2 such as a gold wire.

つぎに、図２（ｂ）に示されるように、前記リードフレームの一面側である前記半導体素子１側を全面的に封止樹脂５により被覆する。全面的にとは、図２（ｂ）に示されるように、複数個の半導体装置用を一体的に被覆することを意味する。この封止樹脂５による被覆は、通常の半導体装置の製造と同様に、たとえばトランスファモールドなどで行うことができる。   Next, as shown in FIG. 2B, the semiconductor element 1 side, which is one side of the lead frame, is entirely covered with a sealing resin 5. “Overall” means that a plurality of semiconductor devices are integrally covered as shown in FIG. The covering with the sealing resin 5 can be performed by, for example, transfer molding, as in the case of manufacturing a normal semiconductor device.

その後、図２（ｃ）に示されるように、封止樹脂５の表面に保持用テープ８を貼付する。この保持用テープ８は、外部接続用電極３を切断する際に、その機械的強度を保つとともに、個片化した場合にも各半導体装置がバラバラにならないように保持する機能を有しているが、たとえば紫外線硬化型または熱硬化型の粘着テープを用いることが好ましい。紫外線の照射または加熱処理により接着強度を上げることができ、ダイシングの際の保持強度を保つことができるからである。   Thereafter, as shown in FIG. 2C, the holding tape 8 is attached to the surface of the sealing resin 5. The holding tape 8 has a function of maintaining the mechanical strength when cutting the external connection electrodes 3 and holding the semiconductor devices so that they do not fall apart even when separated. However, it is preferable to use, for example, an ultraviolet curable or thermosetting adhesive tape. This is because the adhesive strength can be increased by ultraviolet irradiation or heat treatment, and the holding strength during dicing can be maintained.

つぎに、図３（ｄ）に示されるように、リードフレームの他面側から半導体装置の境界部の外部接続用電極３を切断する。この切断は、外部接続用電極３の外側の側面を露出させて接着用金属膜６を被膜形成できるようにするとともに、その側面３ａが封止樹脂５の側面５ａより内側に位置するようにするため、たとえば、溝幅が０.３〜０.４ｍｍ程度と後述する個片化のための切断の溝幅よりも広くなるように行う。   Next, as shown in FIG. 3D, the external connection electrode 3 at the boundary portion of the semiconductor device is cut from the other surface side of the lead frame. In this cutting, the outer side surface of the external connection electrode 3 is exposed so that the adhesive metal film 6 can be formed, and the side surface 3a is positioned inside the side surface 5a of the sealing resin 5. Therefore, for example, the groove width is set to about 0.3 to 0.4 mm, which is wider than the groove width for cutting to be described later.

その後、脱脂工程で表面の汚れや不純物を取り除き、図３（ｅ）に示されるように、たとえば亜硫酸金ナトリウムからなる無電解メッキ液１０に浸漬し、金からなる接着用金属膜６を０.０３μｍ程度の厚さでリードフレームの露出面に形成する。これにより、ダイパッド４の裏面、外部接続用電極３の裏面および前述の切断により露出する外部接続用電極３の外側側面に接着用金属膜６が形成される。   Thereafter, dirt and impurities on the surface are removed in a degreasing step, and as shown in FIG. 3 (e), the metal film for adhesion 6 made of gold is immersed in an electroless plating solution 10 made of, for example, sodium gold sulfite. It is formed on the exposed surface of the lead frame with a thickness of about 03 μm. Thereby, the adhesion metal film 6 is formed on the back surface of the die pad 4, the back surface of the external connection electrode 3, and the outer side surface of the external connection electrode 3 exposed by the above-described cutting.

最後に、封止樹脂５の部分を切断して各半導体装置に個片化する。この切断も、ダイシングブレードによりダイシングすることにより行うことができ、薄いダイシングブレードを用いることにより、前述の切断の幅より狭い幅で切断する。その結果、外部接続用電極３の外側側面３ａが、封止樹脂の側面５ａよりも内側に位置するように形成される。なお切断工程は、ダイシングブレードを用いる代わりに、レーザ光を照射して行うことができる。   Finally, the portion of the sealing resin 5 is cut and separated into individual semiconductor devices. This cutting can also be performed by dicing with a dicing blade. By using a thin dicing blade, the cutting is performed with a width narrower than the above-described cutting width. As a result, the outer side surface 3a of the external connection electrode 3 is formed so as to be located inside the side surface 5a of the sealing resin. Note that the cutting step can be performed by irradiating a laser beam instead of using a dicing blade.

この方法で製造することにより、非常に簡単な製造工程で、外部接続用電極３の外側側面３ａを封止樹脂５の側面５ａよりも内側にしながら、その側面３ａにも接着用金属膜６を形成することができる。その結果、前述のように、高密度化実装に適した小型の半導体装置でありながら、実装基板９への接着状態の検査を容易に行うことができる半導体装置が得られる。   By manufacturing by this method, the bonding metal film 6 is also formed on the side surface 3a while the outer side surface 3a of the external connection electrode 3 is set inside the side surface 5a of the sealing resin 5 by a very simple manufacturing process. Can be formed. As a result, as described above, it is possible to obtain a semiconductor device that can be easily inspected for the state of adhesion to the mounting substrate 9 while being a small semiconductor device suitable for high-density mounting.

本発明による半導体装置の一実施形態の断面説明図である。It is sectional explanatory drawing of one Embodiment of the semiconductor device by this invention. 図１の半導体装置の製造工程を示す断面の説明図である。FIG. 7 is an explanatory diagram of a cross section showing the manufacturing process of the semiconductor device of FIG. 1. 図１の半導体装置の製造工程を示す断面の説明図である。FIG. 7 is an explanatory diagram of a cross section showing the manufacturing process of the semiconductor device of FIG. 1. 従来のリードレス半導体装置の一例を示す断面説明図である。It is sectional explanatory drawing which shows an example of the conventional leadless semiconductor device.

符号の説明Explanation of symbols

１ 半導体素子
２ ワイヤ
３ 外部接続用電極
４ ダイパッド
５ 封止樹脂
６ 接着用金属膜
７ ハンダ材
８ 保持用テープ
９ 実装基板
１０ メッキ液 DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Wire 3 External connection electrode 4 Die pad 5 Sealing resin 6 Adhesive metal film 7 Solder material 8 Holding tape 9 Mounting substrate 10 Plating solution

Claims (2)

半導体素子載置部の一面に載置された半導体素子と、該半導体素子の電極と電気的に接続する外部接続用電極と、前記一面に載置された前記半導体素子を被覆する封止樹脂部とを具備し、前記外部接続用電極の外側側面を含めた露出面に接着用金属膜が設けられ、かつ、前記外側側面部が前記封止樹脂部の側面より内側に位置することを特徴とする半導体装置。   A semiconductor element mounted on one surface of the semiconductor element mounting portion, an external connection electrode that is electrically connected to an electrode of the semiconductor element, and a sealing resin portion that covers the semiconductor element mounted on the one surface And an adhesive metal film is provided on an exposed surface including an outer side surface of the external connection electrode, and the outer side surface portion is located inside a side surface of the sealing resin portion. Semiconductor device. 複数個の半導体素子載置部および外部接続用電極を、隣接する半導体装置の外部接続用電極が連続するように配置した実装用基材を作製し、該実装用基材の前記半導体素子載置部に、それぞれ半導体素子を載置し、該半導体素子の電極を前記外部接続用電極に電気的に接続し、前記実装用基材の前記半導体素子を載置した一面を封止樹脂により被覆し、前記実装用基材の他面側から、前記封止樹脂を残し、前記連続する外部接続用電極を切断し、該切断により露出した側面部を含めた前記外部接続用電極の露出面に接着用金属膜を設け、前記封止樹脂を前記切断の切断幅より狭い幅で切断し、前記外部接続用電極の外側側面部が封止樹脂部の側面より内側に位置するように個片化することを特徴とする半導体装置の製造方法。   A mounting substrate in which a plurality of semiconductor element mounting portions and external connection electrodes are arranged so that the external connection electrodes of adjacent semiconductor devices are continuous is manufactured, and the semiconductor element mounting of the mounting substrate is made The semiconductor element is placed on each of the parts, the electrode of the semiconductor element is electrically connected to the external connection electrode, and one surface of the mounting substrate on which the semiconductor element is placed is covered with a sealing resin. From the other surface side of the mounting substrate, leave the sealing resin, cut the continuous external connection electrode, and adhere to the exposed surface of the external connection electrode including the side surface exposed by the cutting A metal film is provided, the sealing resin is cut with a width narrower than the cutting width of the cutting, and is separated into pieces so that the outer side surface portion of the external connection electrode is located inside the side surface of the sealing resin portion. A method for manufacturing a semiconductor device.
JP2004357590A 2004-12-10 2004-12-10 Semiconductor device and manufacturing method thereof Pending JP2006165411A (en)

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