TW201537716A - 覆晶堆疊封裝結構及其製作方法 - Google Patents

覆晶堆疊封裝結構及其製作方法 Download PDF

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Publication number
TW201537716A
TW201537716A TW103111063A TW103111063A TW201537716A TW 201537716 A TW201537716 A TW 201537716A TW 103111063 A TW103111063 A TW 103111063A TW 103111063 A TW103111063 A TW 103111063A TW 201537716 A TW201537716 A TW 201537716A
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Taiwan
Prior art keywords
metal
layer
sealant
circuit
forming
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TW103111063A
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English (en)
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TWI517343B (zh
Inventor
Shih-Ping Hsu
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Phoenix Pioneer Technology Co Ltd
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Priority to TW103111063A priority Critical patent/TWI517343B/zh
Priority to CN201410126776.8A priority patent/CN104952828A/zh
Priority to US14/445,394 priority patent/US9536864B2/en
Priority to JP2014215412A priority patent/JP2015185845A/ja
Publication of TW201537716A publication Critical patent/TW201537716A/zh
Application granted granted Critical
Publication of TWI517343B publication Critical patent/TWI517343B/zh
Priority to US15/137,416 priority patent/US20160240514A1/en

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Abstract

本發明揭示一種覆晶堆疊封裝結構及其製作方法。該覆晶堆疊封裝結構包含：一絕緣保護層；一導線層，包含至少一金屬走線，並設置於該絕緣保護層上；以及一第一封裝單元，包含複數個金屬柱狀物、一第一電路晶片、及一第一封膠，並設置於該導線層上，該等金屬柱狀物設置於一導柱區內並電性連接該至少一金屬走線，該第一電路晶片設置於一元件區內並電性連接該至少一金屬走線，該第一封膠充填於該第一封裝單元內該等金屬柱狀物以及該第一電路晶片以外的其餘部分。

Description

覆晶堆疊封裝結構及其製作方法
本發明係關於一種覆晶堆疊封裝結構及其製作方法。
新一代的電子產品不僅追求輕薄短小，更朝多功能與高性能的方向發展，因此，積體電路(Integrated Circuit，簡稱IC)技術不斷地高密度化與微型化，以期在有限的晶片空間容納更多的電子元件，而其後端的封裝基板及其構裝技術亦隨之進展，以符合此新一代的電子產品趨勢；例如，覆晶封裝技術，尤其是晶片尺寸的覆晶封裝(Flip-Chip Chip Size Package，簡稱FCCSP)和覆晶堆疊封裝(Flip-Chip Package-On-Package，簡稱FCPOP)，可將不同特性之積體電路元件整合封裝一起，其應用主要在於智慧型手機、平板電腦、筆記型電腦等網路通訊產品，其要求高頻高速的操作及輕薄短小之積體電路封裝。因此，有必要發展新的覆晶堆疊封裝技術，以滿足上述的需求。
為達成此目的，根據本發明的一方面，一實施例提供一種覆晶堆疊封裝結構，其包括：一絕緣保護層；一導線層，包含至少一金屬走線，並設置於該絕緣保護層上；一第一封裝單元，包含複數個金屬柱狀物、一第一電路晶片、及一第一封膠，並設置於該導線層上，該等金屬柱狀物設置於一導柱區內並電性連接該至少一金屬走線，該第一電路晶片設置於一元件區內並電性連接該至少一金屬走線，該第一封膠充填於該第一封裝單元內該等金屬柱狀物以及該第一電路晶片以外的其餘部分；以及一第二封裝單 元，包含一第二電路晶片及一第二封膠，並設置於該第一封裝單元上，該第二電路晶片電性連接該等金屬柱狀物，且該第二封膠充填於該第二封裝單元內該第二電路晶片以外的其餘部分。
在一實施例中，該導線層可進一步包含一介電材料，其充填於該導線層內該至少一金屬走線以外的其餘部分。
在一實施例中，該介電材料與該第一封膠可具有相同或不同的組成材質。該介電材料可包含感光性樹脂材料或非感光性樹脂材料，例如，雙馬來醯亞胺-三氮雜苯(Bismaleimide-Triazine，簡稱BT)樹脂、聚亞醯胺(Polyimide，簡稱PI)樹脂、Ajinomoto建構膜(Ajinomoto Build-up Film，簡稱ABF)、難燃性(Flame Retardent 5，簡稱FR5)玻璃纖維環氧樹脂、液晶高分子(Liquid Crystal Polymer，簡稱LCP)、鐵氟龍(Teflon)等。
在一實施例中，該等金屬柱狀物為銅柱。
在一實施例中，該第一封膠或該第二封膠的組成材質可包含酚醛基樹脂、環氧基樹脂、或矽基樹脂。
在一實施例中，該第一電路晶片可具有複數個第一導電接腳，其連接該至少一金屬走線，且該第二電路晶片可具有複數個第二導電接腳，其連接該等金屬柱狀物。
在一實施例中，複數個電性連接元件(例如，錫球、主動或被動元件)可設置於該絕緣保護層下，並電性連接該至少一金屬走線，用以連接該覆晶堆疊封裝結構中的主動與被動電子元件。
根據本發明的另一方面，另一實施例提供一種覆晶堆疊封裝結構之製作方法，包括下列步驟：(A)提供一承載基板；(B)形成一導線層於該承載基板上，該導線層包含至少一金屬走線；(C)形成複數個金屬柱狀物於該導線層上，使得該等金屬柱狀物電性連接該至少一金屬走線；(D)設置一第一電路晶片於該導線層上，使得該第一電路晶片電性連接該至少一金屬走線，且該第一電路晶片與該等金屬柱狀物彼此不重疊；(E)形成一第一封膠於該承載基板上，該第一封膠包覆該承載基板上所有的該導線層、該等金屬柱狀物、及該第一電路晶片；(F)移除部分的該第一封膠，使得該等 金屬柱狀物露出；(G)設置一第二電路晶片於該第一封膠上，該第二電路晶片並電性連接該等金屬柱狀物；(H)形成一第二封膠於該第一封膠上，該第二封膠包覆該第二電路晶片；以及(I)移除該承載基板，並形成一絕緣保護層於該導線層下。
在一實施例中，步驟(B)可包括：形成一第一光阻層於該承載基板上，並圖案化該第一光阻層；形成一第一金屬層於該圖案化的第一光阻層所形成的開口區內；以及移除該第一光阻層，並使得該第一金屬層的圖案化同時完成，藉以形成該至少一金屬走線。
在一實施例中，步驟(B)可包括：形成一介電層於該承載基板上；移除部份的該介電層，藉以形成該至少一金屬走線的圖案；以及將一第一金屬層形成於該介電層被移除的部份，藉以形成該至少一金屬走線。
在一實施例中，步驟(B)可包括：形成一第一金屬層於該承載基板上；移除部份的該第一金屬層，藉以形成該至少一金屬走線的圖案；以及將一介電材料形成於該第一金屬層被移除的部份，使得該介電材料與該第一金屬層共同組成該導線層。
在一實施例中，步驟(C)可包括：形成一第二光阻層於該承載基板上，並圖案化該第二光阻層；形成一第二金屬層於該第二光阻層上；以及移除該第二光阻層，並使得該第二金屬層的圖案化同時完成，藉以形成該等金屬柱狀物。
在一實施例中，該第一電路晶片可具有複數個第一導電接腳，當該第一電路晶片設置於該導線層上時，該等第一導電接腳連接該至少一金屬走線。
在一實施例中，步驟(E)可採用頂端鑄模(Top Molding)、壓縮鑄模(Compression Molding)、轉換鑄模(Transfer Molding)或注射鑄模(Injection Molding)來達成。
在一實施例中，步驟(F)可包括：藉由研磨、噴砂、電漿或化學蝕刻方式，自上而下去除該第一封膠，直到該等金屬柱狀物的上端面露出。
在一實施例中，該第二電路晶片可具有複數個第二導電接 腳，當該第二電路晶片設置於該第一封膠上時，該等第二導電接腳連接該等金屬柱狀物的露出部分。
在一實施例中，步驟(H)可採用頂端鑄模、壓縮鑄模、轉換鑄模或注射鑄模來達成。
100、200、500‧‧‧覆晶堆疊封裝結構
102‧‧‧承載基板
110、510‧‧‧絕緣保護層
120、520‧‧‧第一導線層
121~126、527、561~565‧‧‧金屬走線
128‧‧‧介電材料
130、530‧‧‧第一封裝單元
132、535、545‧‧‧金屬柱狀物
134‧‧‧第一電路晶片
136‧‧‧第一封膠
137‧‧‧元件區
138‧‧‧導柱區
140、540‧‧‧第二封裝單元
144‧‧‧第二電路晶片
146‧‧‧第二封膠
150、550‧‧‧錫球
300‧‧‧製作方法
S310、S320、S330、S340、S350、S360、S370、S380、S390‧‧‧步驟
560‧‧‧第二導線層
570‧‧‧第三封裝單元
574‧‧‧第三電路晶片
1341、1342‧‧‧第一導電接腳
1441‧‧‧第二導電接腳
第1圖為根據本發明第一實施例的覆晶堆疊封裝結構之剖面示意圖。
第2圖為根據本發明第二實施例的覆晶堆疊封裝結構之剖面示意圖。
第3圖為本實施例的覆晶堆疊封裝結構製作方法的流程示意圖。
第4A~4H圖為對應本實施例製作方法各步驟的覆晶堆疊封裝結構之剖面圖。
第5圖為根據本發明第三實施例的覆晶堆疊封裝結構之剖面示意圖。
為對本發明之特徵、目的及功能有更進一步的認知與瞭解，茲配合圖式詳細說明本發明的實施例如後。在所有的說明書及圖示中，將採用相同的元件編號以指定相同或類似的元件。
在各個實施例的說明中，當一元素被描述是在另一元素之「上方/上」或「下方/下」，係指直接地或間接地在該另一元素之上或之下的情況，其可能包含設置於其間的其他元素；所謂的「直接地」係指其間並未設置其他中介元素。「上方/上」或「下方/下」等的描述係以圖式為基準進行說明，但亦包含其他可能的方向轉變。所謂的「第一」、「第二」、及「第三」係用以描述不同的元素，這些元素並不因為此類謂辭而受到限制。為了說明上的便利和明確，圖式中各元素的厚度或尺寸，係以誇張或省略或概略的方式表示，且各元素的尺寸並未完全為其實際的尺寸。
第1圖為根據本發明第一實施例的覆晶堆疊封裝結構100之剖面示意圖。該覆晶堆疊封裝結構100包含：一絕緣保護層110、一第一導線層120、一第一封裝單元130以及一第二封裝單元140。該絕緣保護層110設置於該覆晶堆疊封裝結構100的最外層或最底層，用以保護該覆晶堆疊封裝結構100免於受到來自外部環境或後續製程(例如，焊接)的可能傷害。如第1圖所示，該第一導線層120設置於該絕緣保護層110上，並包含至少一金屬走線，藉以形成該覆晶堆疊封裝結構100的電路布局，例如，如圖所示之金屬走線121~126。該第一封裝單元130設置於該第一導線層120上，並且包含複數個金屬柱狀物132、一第一電路晶片134及一第一封膠136；其中，該等金屬柱狀物132電性連接該等金屬走線121~124，該第一電路晶片134電性連接該等金屬走線125及126，該第一封膠136充填於該第一封裝單元130內該等金屬柱狀物132以及該第一電路晶片134以外的其餘部分；此外，該第一電路晶片134係設置於該第一封裝單元130的元件區內(請參考第4C圖的137)，而該等金屬柱狀物132係設置於該第一封裝單元130的導柱區(請參考第4C圖的138)內，該元件區與該導柱區分屬該第一封裝單元130彼此未重疊的不同區域。該第二封裝單元140設置於該第一封裝單元130上，並包含一第二電路晶片144及一第二封膠146；其中，該第二電路晶片144電性連接該等金屬柱狀物132，且該第二封膠146充填於該第二封裝單元140內該第二電路晶片144以外的其餘部分。
在本實施例中，該等金屬柱狀物132可為導電銅柱、鋁柱、鎳柱、錫柱或合金柱，較佳者為銅柱，以做為電性連接之用，將該第二封裝單元140的電路元件(例如，該第二電路晶片144)穿過該第一封裝單元130而連接至該第一導線層120。本實施例的電路晶片134及144皆具有多個導電接腳，例如，該第一電路晶片134具有連接該等金屬走線125及126的複數個第一導電接腳(如第1圖所示，但未編號)，該第二電路晶片144具有連接該等金屬柱狀物132的複數個第二導電接腳(如第1圖所示，但未編號)。由於導 電銅柱的定位以及長度或直徑等尺寸可藉由適當的製作方式而得到控制，因此，適用於該第一封裝單元130較薄的實施例，亦適用於該第二電路晶片144的接腳間距較小的實施例，而達到該等第二導電接腳與該等金屬柱狀物132的高精度及細間距之對位。該第一封膠136及該第二封膠146可由適合頂端鑄模(Top Molding)、壓縮鑄模(Compression Molding)、轉換鑄模(Transfer Molding)或注射鑄模(Injection Molding)等技術而選擇合適的絕緣封膠材料(Molding Compound)所組成，例如，酚醛基樹脂(Novolac-Based Resin)、環氧基樹脂(Epoxy-Based Resin)、或矽基樹脂(Silicone-Based Resin)，藉以減小該第一封裝單元130及該第二封裝單元140的封裝厚度，並可有效防止該覆晶堆疊封裝結構100發生彎翹或變形；其中，該第一封膠136與該第二封膠146可採用相同的組成材質。該第一電路晶片134為一主動元件，被設置或埋入該第一封膠136中而形成該第一封裝單元130，且該第二電路晶片144為另一主動元件，被設置或埋入該第二封膠146中而形成該第二封裝單元140，兩者皆可為覆晶(Flip chip)形式的封裝結構，且該第二封裝單元140堆疊於該第一封裝單元130上，藉以形成本技術領域所稱的「覆晶堆疊封裝(FCPOP)」結構，而將不同特性之積體電路(Integrated Circuit，簡稱IC)元件整合封裝在一起。
如第1圖所示，為了將該覆晶堆疊封裝結構100電性連接至外部電路，可在該絕緣保護層110形成具有適當的開口或穿孔(未圖示)，再形成作為電性連接之用的電性連接元件(例如，錫球150)於該絕緣保護層110下，且該等錫球150形成時，其錫料亦同時充填該絕緣保護層110的開口或穿孔內，使得該等錫球150電性連接該等金屬走線121、124、125、126。此外，除了該等金屬走線121~126之外，該第一導線層120的其餘部分可充填一介電材料128，藉以分隔該等金屬走線121~126。在另一實施例中，該第一導線層120的其餘部分亦可直接以該第一封膠136來充填，如第2圖所示之本發明第二實施例覆晶堆疊封裝結構200的剖面 示意圖；也就是第1圖的介電材料128可選用與該第一封膠136相同或不同組成材質的材料。該介電材料可包含感光性樹脂材料或非感光性樹脂材料，例如，雙馬來醯亞胺-三氮雜苯(BT)樹脂、聚亞醯胺樹脂、Ajinomoto建構膜(ABF)、難燃性(FR5)玻璃纖維環氧樹脂、液晶高分子(LCP)、鐵氟龍(Teflon)等。
第3圖為本實施例的覆晶堆疊封裝結構200之製作方法300的流程示意圖，而第4A~4H圖及第2圖為對應本實施例製作方法300各步驟S310~S390的該覆晶堆疊封裝結構100之結構剖面圖。該製作方法300的步驟詳述如下。
步驟S310，如第4A圖所示，提供一承載基板102，其可以是金屬基板或是具有金屬層之玻璃纖維核心基板(Core Substrate)，用以承載或支持其上的導電線路及電子元件；例如，如第1或2圖所示之該第一導線層120、該第一封裝單元130以及該第二封裝單元140。上述的金屬包含鐵(Fe)、鐵/鎳(Fe/Ni)、銅(Cu)、鋁(Al)及其組合或合金，但本發明不以此為限。
步驟S320，如第4B圖所示，形成一第一導線層120於該承載基板102上，並圖案化成該覆晶堆疊封裝結構100所預先設定的導電走線，例如，複數個金屬走線121~126。該第一導線層120可藉由金屬的電鍍(Electrolytic Plating)或蒸鍍(Evaporation)技術來製作，例如，銅、鋁、或鎳，而其導電走線的圖案化可藉由光微影蝕刻(Photolithography)技術來製作。例如，藉由習知的積體電路載板之增層技術或旋轉塗佈技術，沉積一第一光阻層(未圖示)於該承載基板102上，並以曝光顯影的方式圖案化該第一光阻層，藉以形成複數個開口；形成一第一金屬層(未圖示)於該圖案化後的第一光阻層之開口；藉由乾式或化學濕式的方式去除該圖案化後的第一光阻層，以達成該第一金屬層的圖案化而形成該等金屬走線121~126。此外，步驟S320亦可以利用雷射加工方式來達成，例如，步驟S320’：形成一第一金屬層(未圖示)於該承載基板102上；以雷射雕刻技術移除部份的該第一金屬層，藉以使餘留的該第一金屬層之圖案形成該等金屬走線121~126。
步驟S330，如第4C圖所示，形成複數個金屬柱狀物132於該第一導線層120上，例如，銅柱或鋁柱，用以連接後續製程將要製作的該第二封裝單元140之電路元件(例如，該第二電路晶片144)至該第一導線層120。該等金屬柱狀物132可藉由金屬的電鍍或蒸鍍技術來製作，例如，銅或鋁，而該等金屬柱狀物132的圖案化可藉由光微影蝕刻技術來製作。例如，以壓合乾膜光阻製程形成一第二光阻層(未圖示)於該承載基板102及該第一導線層120上，並以曝光顯影的方式圖案化該第二光阻層，以形成開口；形成一第二金屬層(未圖示)於該圖案化後的第二光阻層之開口內；藉由乾式或化學濕式去膜方式，移除該第二光阻層，以達成該第二金屬層的圖案化而形成該等金屬柱狀物132。在此步驟330中，該等金屬柱狀物132所在的層可稱為第一封裝層130’，其可分成如第4C圖所示的二個區域：元件區137及導柱區138，而對該第二光阻層進行圖案化，使得該等金屬柱狀物132形成於該導柱區138內並電性連接該等金屬走線121~124，且該元件區137內的該第二光阻層完全被移除而形成一放置電路用的凹槽，用以容置將於後續製程置入的第一電路晶片134。
步驟S340，如第4D圖所示，設置一第一電路晶片134於該第一導線層120上，使得該第一電路晶片134電性連接該等金屬走線125及126。該第一電路晶片134為一主動元件，且位於該第一封裝層130’的元件區137內，而該等金屬柱狀物132位於該第一封裝層130’的導柱區138內；因此，該第一電路晶片134與該等金屬柱狀物132雖皆位於該第一封裝層130’內，但分別位於該元件區137與該導柱區138的不同區域內，彼此不重疊。此外，該第一電路晶片134可具有複數個第一導電接腳1341及1342，而當該第一電路晶片134設置於該第一導線層120上時，該等第一導電接腳1341及1342分別對準並連接該等金屬走線125及126。
步驟S350，如第4E圖所示，形成一第一封膠136於該承載基板102上，該第一封膠136包覆該承載基板102上所有的該等金屬走線121~126、該等金屬柱狀物132及該第一電路晶片134， 以形成本實施例的覆晶堆疊封裝結構200之其中一個封裝單元，其可藉由該第一封膠136的頂端鑄模、壓縮鑄模、轉換鑄模、或注射鑄模等技術來製作。例如，首先，提供一第一鑄模容器(未圖示)，並放置一第一封裝膠體(未圖示)於該第一鑄模容器中；再適當地對應該第一鑄模容器與該承載基板102，使得該等金屬走線121~126、該等金屬柱狀物132及該第一電路晶片134位於該第一鑄模容器與該承載基板102之間；接著，上下壓合該第一鑄模容器與該承載基板102，並同時進行該第一封裝膠體的固化，藉以形成該第一封膠136，其完全包覆該承載基板102上所有的該等金屬走線121~126、該等金屬柱狀物132及該第一電路晶片134；最後再將該第一鑄模容器移除，即可形成如第4E圖之剖面圖。此外，該第一封膠136的鑄模成型亦可以如下方式來實施：首先，提供一第一鑄模容器(未圖示)及一粉狀或片狀的第一封裝膠體(未圖示)；以例如加熱方式，將該第一封裝膠體成流體，並注入該第一鑄模容器中；適當地對應該第一鑄模容器與該承載基板102，使得該等金屬走線121~126、該等金屬柱狀物132及該第一電路晶片134位於該第一鑄模容器與該承載基板102之間；接著，上下壓合該第一鑄模容器與該承載基板102，並同時進行該第一封裝膠體的固化，藉以形成該第一封膠136，其完全包覆該承載基板102上所有的該等金屬走線121~126、該等金屬柱狀物132及該第一電路晶片134；最後再將該第一鑄模容器移除，即可形成如第4E圖之剖面圖。其中，該第一封裝膠體可以是酚醛基樹脂(Novolac-Based Resin)、環氧基樹脂(Epoxy-Based Resin)、或矽基樹脂(Silicone-Based Resin)等絕緣材料所組成，但不以此為限。
步驟S360，如第4E圖所示，移除部分的該第一封膠136，以露出該等金屬柱狀物132，藉以形成該第一封裝單元130；也就是該第一封裝單元130位於該第一導線層120上，並且包含該等金屬柱狀物132、該第一電路晶片134及該第一封膠136；其中，該第一封膠136充填於該第一封裝單元130內該等金屬柱狀物132以及該第一電路晶片134以外的其餘部分。該第一封膠136雖包 覆該承載基板102上所有的該等金屬走線121~126，但為了使後續製程將會設置於該第一封裝單元130上的另一主動元件(第二電路晶片144)得以透過該等金屬柱狀物132而連接該等金屬走線121~124，必須移除該第一封膠136的上半部，以露出該等金屬柱狀物132的上端面。本實施例可藉由研磨(Polishing)、磨削(Grinding)、噴砂、電漿或化學蝕刻方式，自上而下去除該第一封膠136的上半部，直到該等金屬柱狀物132的上端面露出，即可停止研磨。但不以此為限；在另一實施例中，可在該第一封膠136形成時，恰好露出該等金屬柱狀物132之上端面，則無需進行此部份封膠移除的步驟。
步驟S370，如第4G圖所示，設置一第二電路晶片144於該第一封裝單元130上，使得該第二電路晶片144電性連接該等金屬柱狀物132。該第二電路晶片144為另一主動元件，其可具有複數個第二導電接腳1441，而當該第二電路晶片144設置於該第一封裝單元130上時，該等第二導電接腳1441分別對準並連接該等金屬柱狀物132露出的上端面。
步驟S380，如第4H圖所示，形成一第二封膠146於該第一封裝單元130上，該第二封膠146包覆該第二電路晶片144，以形成本實施例的覆晶堆疊封裝結構200之另一個封裝單元140，其可藉由該第二封膠146的頂端鑄模、壓縮鑄模、轉換鑄模、或注射鑄模等技術來製作。例如，首先，提供一第二鑄模容器(未圖示)，並放置一第二封裝膠體(未圖示)於該第二鑄模容器中；再適當地對應該第二鑄模容器與該承載基板102，使得該第二電路晶片144位於該第二鑄模容器與該承載基板102之間；接著，上下壓合該第二鑄模容器與該承載基板102，並同時進行該第二封裝膠體的固化，藉以形成該第二封膠146，其完全包覆該第一封裝單元130上的該第二電路晶片144；最後再將該第二鑄模容器移除，即可形成如第4H圖之剖面圖。此外，該第二封膠146的鑄模成型亦可以如下方式來實施：首先，提供一第二鑄模容器(未圖示)及一粉狀或片狀的第二封裝膠體(未圖示)；以例如加熱方式，將該第二封裝膠 體成流體，並注入該第二鑄模容器中；適當地對應該第二鑄模容器與該承載基板102，使得該第二電路晶片144位於該第二鑄模容器與該承載基板102之間；接著，上下壓合該第二鑄模容器與該承載基板102，並同時進行該第二封裝膠體的固化，藉以形成該第二封膠146，其完全包覆該第一封裝單元130上的該第二電路晶片144；最後再將該第二鑄模容器移除，即可形成如第4H圖之剖面圖。其中，該第二封裝膠體亦可以是酚醛基樹脂(Novolac-Based Resin)、環氧基樹脂(Epoxy-Based Resin)、或矽基樹脂(Silicone-Based Resin)等絕緣材料所組成，但不以此為限。
步驟S390，如第2圖所示，移除該承載基板102，並形成一絕緣保護層110於該第一導線層120之下。該承載基板102至此已完成其製程上的階段性任務，且本實施例的實際成品也不再需要它，因此可將其移除。該承載基板102的移除可應用化學蝕刻或雷射加工技術來達成。該絕緣保護層110可形成於該覆晶堆疊封裝結構200的最外層，也就是該第一導線層120之下，用以保護該覆晶堆疊封裝結構200免於受到來自外部環境或後續製程(例如，焊接)的可能傷害。
本實施例進行至此，已完成該覆晶堆疊封裝結構200的主體之製作。接著，為了將該覆晶堆疊封裝結構200電性連接至外部電路，可利用適當具有開口的電性連接元件(例如，錫球)於該絕緣保護層110中，再上錫料於開口內之電性連接元件上，以形成錫球150，如第2圖所示，以作為該等金屬走線121、124、125、126與外部電路的電性連接之用。複數個電性連接可設置於該絕緣保護層下，並電性連接該至少一金屬走線，用以連接該覆晶堆疊封裝結構中的主動與被動電子元件，亦可在電性連接元件上焊接上主/被動電子元件。
此外，除了該等金屬走線121~126之外，該第一導線層120的其餘部分可充填一介電材料128，藉以分隔該等金屬走線121~126，並可減少在該第一封膠136因填膠不足的情況下可能導致的空泡間隙。該介電材料可包含感光性樹脂材料或非感光性樹脂材 料，例如，BT(英文及中文譯名？？)、PI(英文及中文譯名？？)、ABF(英文及中文譯名？？)、FR5(英文及中文譯名？？)、LCP(英文及中文譯名？？)、鐵氟龍(Teflon)等。在此另一實施例中，可在上述製作方法300的步驟S320或S320’後進一步加上下列的步驟S321：將一介電材料形成於該第一金屬層被移除的部份，使得該介電材料128與該等金屬走線121~126共同組成該第一導線層120。上述步驟S320’與S321的組合亦可先形成該介電材料128的圖案，再將該第一金屬層沉積於該介電材料128被移除的部份，以形成該等金屬走線121~126；也就是如下的步驟：形成一介電層(未圖示)於該承載基板102上；以曝光顯影方式或雷射加工方式移除部份的該介電層，藉以使被移除的該介電層之圖案形成該等金屬走線121~126；將一第一金屬層形成於該介電層被移除的部份，使得餘留的該介電層128與該等金屬走線121~126共同組成該第一導線層120。藉此，我們可以得到如第1圖所示的覆晶堆疊封裝結構100，而其餘的步驟S310、S330、S340、S350、S360、S370、S380及S390則與上述的製作方法300類同，在此不再贅述。
上述的實施例係為具有二個封裝單元(該第一封裝單元130與該第二封裝單元140)的覆晶堆疊封裝(FCPOP)結構，但本發明不以此為限，其亦可延伸為具有二個以上封裝單元的覆晶堆疊封裝結構。例如，第5圖為根據本發明第三實施例的覆晶堆疊封裝結構500之剖面示意圖，其為具有三個封裝單元的覆晶堆疊封裝結構，並具有多層介電層及多層導線層。該覆晶堆疊封裝結構500包含：複數個錫球550、一絕緣保護層510、一第一導線層520、一第一封裝單元530、一第二封裝單元540、一第二導線層560、以及一第三封裝單元570。在本實施例中，該等錫球550、該絕緣保護層510、該第一導線層520、該第一封裝單元530及該第二封裝單元540相當於第一實施例的錫球150、絕緣保護層110、第一導線層120、第一封裝單元130及第二封裝單元140，其中的差異處包含：該第一導線層520更包含金屬走線527、該第一封裝單元530更包含金屬柱狀物535、且該第二封裝單元540更包含金屬柱狀物 545，該金屬柱狀物535連接該金屬柱狀物545與金屬走線527，用以提供該第三封裝單元570連接至外部電路。該第二導線層560包含複數個金屬走線561~565，該第三封裝單元570包含一第三電路晶片574，其餘部分類同於第一實施例的第二封裝單元140，該第三電路晶片574電性連接該等金屬走線561~565，且該金屬走線565經由該金屬柱狀物545、該金屬柱狀物535及該金屬走線527而連接至該覆晶堆疊封裝結構500的外部電路。其餘與第一實施例類同之處請參閱其前述說明，在此不再贅述。
在此要特別說明，本發明實施例係以覆晶堆疊封裝(FCPOP)的技術領域為例，但不以此為限。本實施例利用金屬柱狀物(例如，導電銅柱)作為將上層的封裝單元(例如，140)的電路元件穿過下層的封裝單元(例如，130)而連接至金屬走線或外部電路。由於導電銅柱的定位以及長度或直徑等尺寸可藉由適當的製作方式而得到控制，因此，適用於下層封裝單元較薄的實施例，亦適用於上層封裝單元的電路晶片之接腳間距較小的實施例，而達到電路接腳與導電銅柱之間的高精度及細間距之對位。此外，採用具高剛性的封膠材料(Molding Compound)來封裝各個封裝單元(例如，130、140、570)，可減小封裝單元的封裝厚度，並有效防止覆晶堆疊封裝結構發生彎翹或變形。
唯以上所述者，僅為本發明之較佳實施例，當不能以之限制本發明的範圍。即大凡依本發明申請專利範圍所做之均等變化及修飾，仍將不失本發明之要義所在，亦不脫離本發明之精神和範圍，故都應視為本發明的進一步實施狀況。
200‧‧‧覆晶堆疊封裝結構
110‧‧‧絕緣保護層
120‧‧‧第一導線層
121~126‧‧‧金屬走線
130‧‧‧第一封裝單元
132‧‧‧金屬柱狀物
134‧‧‧第一電路晶片
136‧‧‧第一封膠
140‧‧‧第二封裝單元
144‧‧‧第二電路晶片
146‧‧‧第二封膠
150‧‧‧錫球

Claims (22)

  1. 一種覆晶堆疊封裝結構，其包括：一絕緣保護層；一導線層，包含至少一金屬走線，並設置於該絕緣保護層上；以及一第一封裝單元，包含複數個金屬柱狀物、一第一電路晶片、及一第一封膠，並設置於該導線層上，該等金屬柱狀物設置於一導柱區內並電性連接該至少一金屬走線，該第一電路晶片設置於一元件區內並電性連接該至少一金屬走線，該第一封膠充填於該第一封裝單元內該等金屬柱狀物以及該第一電路晶片以外的其餘部分。
  2. 如申請專利範圍第1項所述之覆晶堆疊封裝結構，進一步包括一第二封裝單元，其包含一第二電路晶片及一第二封膠，並設置於該第一封裝單元上，該第二電路晶片電性連接該等金屬柱狀物，且該第二封膠充填於該第二封裝單元內該第二電路晶片以外的其餘部分。
  3. 如申請專利範圍第1項所述之覆晶堆疊封裝結構，其中，該導線層進一步包含一介電材料，其充填於該導線層內該至少一金屬走線以外的其餘部分。
  4. 如申請專利範圍第3項所述之覆晶堆疊封裝結構，其中，該介電材料與該第一封膠具有相同或不同的組成材質。
  5. 如申請專利範圍第1項所述之覆晶堆疊封裝結構，其中，該等金屬柱狀物為銅柱。
  6. 如申請專利範圍第1項所述之覆晶堆疊封裝結構，其中，該第一封膠的組成材質包含酚醛基樹脂(Novolac-Based Resin)、環氧基樹脂(Epoxy-Based Resin)、或矽基樹脂(Silicone-Based Resin)。
  7. 如申請專利範圍第2項所述之覆晶堆疊封裝結構，其中，該第二封膠的組成材質包含酚醛基樹脂、環氧基樹脂、或矽基樹脂。
  8. 如申請專利範圍第1項所述之覆晶堆疊封裝結構，其中，該第一 電路晶片具有複數個第一導電接腳，其連接該至少一金屬走線。
  9. 如申請專利範圍第2項所述之覆晶堆疊封裝結構，其中，該第二電路晶片具有複數個第二導電接腳，其連接該等金屬柱狀物。
  10. 如申請專利範圍第1項所述之覆晶堆疊封裝結構，其中，複數個電性連接元件設置於該絕緣保護層下，並電性連接該至少一金屬走線。
  11. 一種覆晶堆疊封裝結構之製作方法，包括下列步驟：(A)提供一承載基板；(B)形成一導線層於該承載基板上，該導線層包含至少一金屬走線；(C)形成複數個金屬柱狀物於該導線層上，使得該等金屬柱狀物電性連接該至少一金屬走線；(D)設置一第一電路晶片於該導線層上，使得該第一電路晶片電性連接該至少一金屬走線，且該第一電路晶片與該等金屬柱狀物彼此不重疊；(E)形成一第一封膠於該承載基板上，該第一封膠包覆該承載基板上所有的該導線層、該等金屬柱狀物、及該第一電路晶片；(F)移除部分的該第一封膠，使得該等金屬柱狀物露出；(G)設置一第二電路晶片於該第一封膠上，該第二電路晶片並電性連接該等金屬柱狀物；(H)形成一第二封膠於該第一封膠上，該第二封膠包覆該第二電路晶片；以及(I)移除該承載基板，並形成一絕緣保護層於該導線層下。
  12. 如申請專利範圍第11項所述之製造方法，其中的步驟(B)包括：形成一第一光阻層於該承載基板上，並圖案化該第一光阻層；形成一第一金屬層於該第一光阻層上；以及移除該第一光阻層，並使得該第一金屬層的圖案化同時完成，藉以形成該至少一金屬走線。
  13. 如申請專利範圍第11項所述之製造方法，其中的步驟(B)包括： 形成一介電層於該承載基板上；移除部份的該介電層，藉以形成該至少一金屬走線的圖案；以及將一第一金屬層形成於該介電層被移除的部份，藉以形成該至少一金屬走線。
  14. 如申請專利範圍第11項所述之製造方法，其中的步驟(B)包括：形成一第一金屬層於該承載基板上；移除部份的該第一金屬層，藉以形成該至少一金屬走線的圖案；以及將一介電材料形成於該第一金屬層被移除的部份，使得該介電材料與該第一金屬層共同組成該導線層。
  15. 如申請專利範圍第11項所述之製造方法，其中的步驟(C)包括：形成一第二光阻層於該承載基板上，並圖案化該第二光阻層；形成一第二金屬層於該第二光阻層上；以及移除該第二光阻層，並使得該第二金屬層的圖案化同時完成，藉以形成該等金屬柱狀物。
  16. 如申請專利範圍第11項所述之製造方法，其中，該第一電路晶片具有複數個第一導電接腳，當該第一電路晶片設置於該導線層上時，該等第一導電接腳連接該至少一金屬走線。
  17. 如申請專利範圍第11項所述之製造方法，其中的步驟(E)係藉由頂端鑄模、壓縮鑄模、轉換鑄模或注射鑄模技術來達成。
  18. 如申請專利範圍第17項所述之製作方法，其中，該第一封膠的材料包含酚醛基樹脂、環氧基樹脂、或矽基樹脂。
  19. 如申請專利範圍第11項所述之製造方法，其中的步驟(F)包括：藉由研磨、噴砂、電漿或化學蝕刻方式，自上而下去除該第一封膠，直到該等金屬柱狀物的上端面露出。
  20. 如申請專利範圍第11項所述之製造方法，其中，該第二電路晶片具有複數個第二導電接腳，當該第二電路晶片設置於該第一封膠上時，該等第二導電接腳連接該等金屬柱狀物的露出部分。
  21. 如申請專利範圍第11項所述之製造方法，其中的步驟(H)係藉由頂端鑄模、壓縮鑄模、轉換鑄模或注射鑄模技術來達成。
  22. 如申請專利範圍第21項所述之製作方法，其中，該第二封膠的材料包含酚醛基樹脂、環氧基樹脂、或矽基樹脂。
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