TW201444955A - 太陽能電池用矽晶圓及其製造方法 - Google Patents
太陽能電池用矽晶圓及其製造方法 Download PDFInfo
- Publication number
- TW201444955A TW201444955A TW103114268A TW103114268A TW201444955A TW 201444955 A TW201444955 A TW 201444955A TW 103114268 A TW103114268 A TW 103114268A TW 103114268 A TW103114268 A TW 103114268A TW 201444955 A TW201444955 A TW 201444955A
- Authority
- TW
- Taiwan
- Prior art keywords
- weight
- acid
- etching
- wafer
- solar cell
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 19
- 229910052710 silicon Inorganic materials 0.000 title claims description 19
- 239000010703 silicon Substances 0.000 title claims description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 111
- 238000005530 etching Methods 0.000 claims abstract description 100
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 94
- 239000006061 abrasive grain Substances 0.000 claims abstract description 51
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000203 mixture Substances 0.000 claims abstract description 36
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 34
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002253 acid Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000010586 diagram Methods 0.000 claims abstract description 7
- 239000007788 liquid Substances 0.000 claims description 29
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 9
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 31
- 229910052732 germanium Inorganic materials 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 95
- 239000000243 solution Substances 0.000 description 37
- 239000007864 aqueous solution Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 20
- 239000013078 crystal Substances 0.000 description 19
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 15
- 239000011162 core material Substances 0.000 description 12
- -1 4.2 wt% Chemical compound 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 229910003460 diamond Inorganic materials 0.000 description 7
- 239000010432 diamond Substances 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 229910000831 Steel Inorganic materials 0.000 description 6
- 150000007513 acids Chemical class 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000010959 steel Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910000851 Alloy steel Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910000639 Spring steel Inorganic materials 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000677 High-carbon steel Inorganic materials 0.000 description 1
- 229910001240 Maraging steel Inorganic materials 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- 229910000870 Weathering steel Inorganic materials 0.000 description 1
- AZFNGPAYDKGCRB-XCPIVNJJSA-M [(1s,2s)-2-amino-1,2-diphenylethyl]-(4-methylphenyl)sulfonylazanide;chlororuthenium(1+);1-methyl-4-propan-2-ylbenzene Chemical compound [Ru+]Cl.CC(C)C1=CC=C(C)C=C1.C1=CC(C)=CC=C1S(=O)(=O)[N-][C@@H](C=1C=CC=CC=1)[C@@H](N)C1=CC=CC=C1 AZFNGPAYDKGCRB-XCPIVNJJSA-M 0.000 description 1
- 238000010669 acid-base reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- CAMXVZOXBADHNJ-UHFFFAOYSA-N ammonium nitrite Chemical compound [NH4+].[O-]N=O CAMXVZOXBADHNJ-UHFFFAOYSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000010960 cold rolled steel Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010289 potassium nitrite Nutrition 0.000 description 1
- 239000004304 potassium nitrite Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- 235000010288 sodium nitrite Nutrition 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0633—Grinders for cutting-off using a cutting wire
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
- Chemical & Material Sciences (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013094163 | 2013-04-26 | ||
| JP2014009159A JP5868437B2 (ja) | 2013-04-26 | 2014-01-22 | 太陽電池用シリコンウエハーの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201444955A true TW201444955A (zh) | 2014-12-01 |
Family
ID=51791652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103114268A TW201444955A (zh) | 2013-04-26 | 2014-04-18 | 太陽能電池用矽晶圓及其製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5868437B2 (enExample) |
| KR (1) | KR20160002683A (enExample) |
| CN (1) | CN105144351B (enExample) |
| SG (1) | SG11201508619VA (enExample) |
| TW (1) | TW201444955A (enExample) |
| WO (1) | WO2014175072A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014232829A (ja) * | 2013-05-30 | 2014-12-11 | 日本化成株式会社 | 太陽電池用シリコンウエハーの製造方法 |
| WO2016098701A1 (ja) * | 2014-12-15 | 2016-06-23 | シャープ株式会社 | 半導体基板の製造方法、光電変換素子の製造方法、半導体基板および光電変換素子 |
| TWI538986B (zh) * | 2015-07-15 | 2016-06-21 | 綠能科技股份有限公司 | 蝕刻液以及矽基板的表面粗糙化的方法 |
| US10991809B2 (en) | 2015-11-23 | 2021-04-27 | Entegris, Inc. | Composition and process for selectively etching p-doped polysilicon relative to silicon nitride |
| CN108183067A (zh) * | 2018-01-05 | 2018-06-19 | 苏州同冠微电子有限公司 | 一种半导体晶圆的处理方法 |
| CN111748806B (zh) * | 2020-07-21 | 2022-08-23 | 江苏悦锌达新材料有限公司 | 一种用于聚苯硫醚及其复合材料的粗化液及其制备方法和使用方法 |
| CN112233967B (zh) * | 2020-10-15 | 2024-05-03 | 扬州扬杰电子科技股份有限公司 | 一种改善背面金属与衬底Si脱落异常的加工方法 |
| CN120786990A (zh) * | 2024-04-09 | 2025-10-14 | 浙江晶科能源有限公司 | 分片电池及其形成方法、光伏组件 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09270400A (ja) | 1996-01-31 | 1997-10-14 | Shin Etsu Handotai Co Ltd | 半導体ウェーハの製造方法 |
| JP4024934B2 (ja) | 1998-08-10 | 2007-12-19 | 住友電気工業株式会社 | ワイヤーソー及びその製造方法 |
| DE19962136A1 (de) * | 1999-12-22 | 2001-06-28 | Merck Patent Gmbh | Verfahren zur Rauhätzung von Siliziumsolarzellen |
| EP1295320A2 (en) | 2000-06-30 | 2003-03-26 | MEMC Electronic Materials, Inc. | Process for etching silicon wafers |
| JP2004063954A (ja) | 2002-07-31 | 2004-02-26 | Sumitomo Mitsubishi Silicon Corp | シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法 |
| JP3870896B2 (ja) * | 2002-12-11 | 2007-01-24 | 株式会社デンソー | 半導体装置の製造方法およびそれにより製造される半導体装置 |
| JP4231049B2 (ja) | 2003-10-10 | 2009-02-25 | 三益半導体工業株式会社 | ウェーハの粗面処理方法 |
| JP4430488B2 (ja) | 2004-09-02 | 2010-03-10 | シャープ株式会社 | 太陽電池及びその製造方法 |
| JP4766880B2 (ja) * | 2005-01-18 | 2011-09-07 | シャープ株式会社 | 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法 |
| US8222118B2 (en) * | 2008-12-15 | 2012-07-17 | Intel Corporation | Wafer backside grinding with stress relief |
| MY158452A (en) * | 2009-09-21 | 2016-10-14 | Basf Se | Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates |
| DE102010012044A1 (de) * | 2010-03-19 | 2011-09-22 | Friedrich-Schiller-Universität Jena | Strukturierte Siliziumschicht für ein optoelektronisches Bauelement und optoelektronisches Bauelement |
| JP2011255475A (ja) | 2010-06-11 | 2011-12-22 | Takatori Corp | 固定砥粒ワイヤ |
| JP2012024866A (ja) | 2010-07-21 | 2012-02-09 | Sumco Corp | ワイヤソー切断スラッジの回収方法およびその装置 |
| KR101657626B1 (ko) * | 2010-10-08 | 2016-09-19 | 주식회사 원익아이피에스 | 태양전지제조방법 및 그 방법에 의하여 제조된 태양전지 |
| US9123840B2 (en) * | 2011-01-27 | 2015-09-01 | Kyocera Corporation | Solar cell element manufacturing method, solar cell element, and solar cell module |
| JP2012169420A (ja) * | 2011-02-14 | 2012-09-06 | Sumco Corp | 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法および太陽電池モジュールの製造方法 |
| JP2012222300A (ja) * | 2011-04-13 | 2012-11-12 | Panasonic Corp | テクスチャ形成面を有するシリコン基板、およびその製造方法 |
| JP5780856B2 (ja) | 2011-06-30 | 2015-09-16 | 京セラ株式会社 | 積層セラミックコンデンサ |
| JP2013043268A (ja) | 2011-08-26 | 2013-03-04 | Sharp Corp | 固定砥粒ワイヤおよび半導体基板の製造方法 |
-
2014
- 2014-01-22 JP JP2014009159A patent/JP5868437B2/ja not_active Expired - Fee Related
- 2014-04-09 WO PCT/JP2014/060349 patent/WO2014175072A1/ja not_active Ceased
- 2014-04-09 CN CN201480023748.1A patent/CN105144351B/zh not_active Expired - Fee Related
- 2014-04-09 SG SG11201508619VA patent/SG11201508619VA/en unknown
- 2014-04-09 KR KR1020157022409A patent/KR20160002683A/ko not_active Ceased
- 2014-04-18 TW TW103114268A patent/TW201444955A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN105144351B (zh) | 2017-09-26 |
| WO2014175072A1 (ja) | 2014-10-30 |
| SG11201508619VA (en) | 2015-12-30 |
| CN105144351A (zh) | 2015-12-09 |
| JP2014225633A (ja) | 2014-12-04 |
| KR20160002683A (ko) | 2016-01-08 |
| JP5868437B2 (ja) | 2016-02-24 |
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