JP5868437B2 - 太陽電池用シリコンウエハーの製造方法 - Google Patents

太陽電池用シリコンウエハーの製造方法 Download PDF

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Publication number
JP5868437B2
JP5868437B2 JP2014009159A JP2014009159A JP5868437B2 JP 5868437 B2 JP5868437 B2 JP 5868437B2 JP 2014009159 A JP2014009159 A JP 2014009159A JP 2014009159 A JP2014009159 A JP 2014009159A JP 5868437 B2 JP5868437 B2 JP 5868437B2
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Japan
Prior art keywords
weight
silicon wafer
acid
etching
hydrofluoric acid
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Expired - Fee Related
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JP2014009159A
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English (en)
Japanese (ja)
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JP2014225633A (ja
JP2014225633A5 (enExample
Inventor
正彦 池内
正彦 池内
忠 遠藤
忠 遠藤
津田　統
統 津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TKX Corp
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TKX Corp
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Publication date
Priority to JP2014009159A priority Critical patent/JP5868437B2/ja
Application filed by TKX Corp filed Critical TKX Corp
Priority to SG11201508619VA priority patent/SG11201508619VA/en
Priority to CN201480023748.1A priority patent/CN105144351B/zh
Priority to PCT/JP2014/060349 priority patent/WO2014175072A1/ja
Priority to KR1020157022409A priority patent/KR20160002683A/ko
Priority to TW103114268A priority patent/TW201444955A/zh
Publication of JP2014225633A publication Critical patent/JP2014225633A/ja
Publication of JP2014225633A5 publication Critical patent/JP2014225633A5/ja
Application granted granted Critical
Publication of JP5868437B2 publication Critical patent/JP5868437B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystallography & Structural Chemistry (AREA)
JP2014009159A 2013-04-26 2014-01-22 太陽電池用シリコンウエハーの製造方法 Expired - Fee Related JP5868437B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2014009159A JP5868437B2 (ja) 2013-04-26 2014-01-22 太陽電池用シリコンウエハーの製造方法
CN201480023748.1A CN105144351B (zh) 2013-04-26 2014-04-09 太阳能电池用硅晶圆及其制造方法
PCT/JP2014/060349 WO2014175072A1 (ja) 2013-04-26 2014-04-09 太陽電池用シリコンウエハー及びその製造方法
KR1020157022409A KR20160002683A (ko) 2013-04-26 2014-04-09 태양전지용 실리콘 웨이퍼 및 그 제조 방법
SG11201508619VA SG11201508619VA (en) 2013-04-26 2014-04-09 Silicon wafer for solar cells and method for producing same
TW103114268A TW201444955A (zh) 2013-04-26 2014-04-18 太陽能電池用矽晶圓及其製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013094163 2013-04-26
JP2013094163 2013-04-26
JP2014009159A JP5868437B2 (ja) 2013-04-26 2014-01-22 太陽電池用シリコンウエハーの製造方法

Publications (3)

Publication Number Publication Date
JP2014225633A JP2014225633A (ja) 2014-12-04
JP2014225633A5 JP2014225633A5 (enExample) 2015-07-16
JP5868437B2 true JP5868437B2 (ja) 2016-02-24

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JP2014009159A Expired - Fee Related JP5868437B2 (ja) 2013-04-26 2014-01-22 太陽電池用シリコンウエハーの製造方法

Country Status (6)

Country Link
JP (1) JP5868437B2 (enExample)
KR (1) KR20160002683A (enExample)
CN (1) CN105144351B (enExample)
SG (1) SG11201508619VA (enExample)
TW (1) TW201444955A (enExample)
WO (1) WO2014175072A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232829A (ja) * 2013-05-30 2014-12-11 日本化成株式会社 太陽電池用シリコンウエハーの製造方法
JP6898737B2 (ja) * 2014-12-15 2021-07-07 シャープ株式会社 半導体基板の製造方法、光電変換素子の製造方法および光電変換素子
TWI538986B (zh) * 2015-07-15 2016-06-21 綠能科技股份有限公司 蝕刻液以及矽基板的表面粗糙化的方法
WO2017091572A1 (en) 2015-11-23 2017-06-01 Entegris, Inc. Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
CN108183067A (zh) * 2018-01-05 2018-06-19 苏州同冠微电子有限公司 一种半导体晶圆的处理方法
CN111748806B (zh) * 2020-07-21 2022-08-23 江苏悦锌达新材料有限公司 一种用于聚苯硫醚及其复合材料的粗化液及其制备方法和使用方法
CN112233967B (zh) * 2020-10-15 2024-05-03 扬州扬杰电子科技股份有限公司 一种改善背面金属与衬底Si脱落异常的加工方法
CN120786990A (zh) * 2024-04-09 2025-10-14 浙江晶科能源有限公司 分片电池及其形成方法、光伏组件

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JPH09270400A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
JP4024934B2 (ja) 1998-08-10 2007-12-19 住友電気工業株式会社 ワイヤーソー及びその製造方法
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
JP2004503081A (ja) 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウェーハのエッチング方法
JP2004063954A (ja) 2002-07-31 2004-02-26 Sumitomo Mitsubishi Silicon Corp シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法
JP3870896B2 (ja) * 2002-12-11 2007-01-24 株式会社デンソー 半導体装置の製造方法およびそれにより製造される半導体装置
JP4231049B2 (ja) 2003-10-10 2009-02-25 三益半導体工業株式会社 ウェーハの粗面処理方法
JP4430488B2 (ja) 2004-09-02 2010-03-10 シャープ株式会社 太陽電池及びその製造方法
JP4766880B2 (ja) * 2005-01-18 2011-09-07 シャープ株式会社 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法
US8222118B2 (en) * 2008-12-15 2012-07-17 Intel Corporation Wafer backside grinding with stress relief
KR20120135185A (ko) * 2009-09-21 2012-12-12 바스프 에스이 단결정 및 다결정 규소 기판의 표면을 조직화하기 위한 산성 에칭 수용액 및 방법
DE102010012044A1 (de) * 2010-03-19 2011-09-22 Friedrich-Schiller-Universität Jena Strukturierte Siliziumschicht für ein optoelektronisches Bauelement und optoelektronisches Bauelement
JP2011255475A (ja) 2010-06-11 2011-12-22 Takatori Corp 固定砥粒ワイヤ
JP2012024866A (ja) 2010-07-21 2012-02-09 Sumco Corp ワイヤソー切断スラッジの回収方法およびその装置
KR101657626B1 (ko) * 2010-10-08 2016-09-19 주식회사 원익아이피에스 태양전지제조방법 및 그 방법에 의하여 제조된 태양전지
JP5677469B2 (ja) * 2011-01-27 2015-02-25 京セラ株式会社 太陽電池素子の製造方法、太陽電池素子、および太陽電池モジュール
JP2012169420A (ja) * 2011-02-14 2012-09-06 Sumco Corp 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法および太陽電池モジュールの製造方法
JP2012222300A (ja) * 2011-04-13 2012-11-12 Panasonic Corp テクスチャ形成面を有するシリコン基板、およびその製造方法
JP5780856B2 (ja) 2011-06-30 2015-09-16 京セラ株式会社 積層セラミックコンデンサ
JP2013043268A (ja) 2011-08-26 2013-03-04 Sharp Corp 固定砥粒ワイヤおよび半導体基板の製造方法

Also Published As

Publication number Publication date
KR20160002683A (ko) 2016-01-08
JP2014225633A (ja) 2014-12-04
WO2014175072A1 (ja) 2014-10-30
TW201444955A (zh) 2014-12-01
CN105144351A (zh) 2015-12-09
SG11201508619VA (en) 2015-12-30
CN105144351B (zh) 2017-09-26

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