CN105144351B - 太阳能电池用硅晶圆及其制造方法 - Google Patents

太阳能电池用硅晶圆及其制造方法 Download PDF

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Publication number
CN105144351B
CN105144351B CN201480023748.1A CN201480023748A CN105144351B CN 105144351 B CN105144351 B CN 105144351B CN 201480023748 A CN201480023748 A CN 201480023748A CN 105144351 B CN105144351 B CN 105144351B
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China
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weight
point
acid
silicon
silicon wafer
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Expired - Fee Related
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CN201480023748.1A
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English (en)
Chinese (zh)
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CN105144351A (zh
Inventor
池内正彦
远藤忠
津田统
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TKX Corp
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TKX Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • ing And Chemical Polishing (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201480023748.1A 2013-04-26 2014-04-09 太阳能电池用硅晶圆及其制造方法 Expired - Fee Related CN105144351B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013094163 2013-04-26
JP2013-094163 2013-04-26
JP2014009159A JP5868437B2 (ja) 2013-04-26 2014-01-22 太陽電池用シリコンウエハーの製造方法
JP2014-009159 2014-01-22
PCT/JP2014/060349 WO2014175072A1 (ja) 2013-04-26 2014-04-09 太陽電池用シリコンウエハー及びその製造方法

Publications (2)

Publication Number Publication Date
CN105144351A CN105144351A (zh) 2015-12-09
CN105144351B true CN105144351B (zh) 2017-09-26

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CN201480023748.1A Expired - Fee Related CN105144351B (zh) 2013-04-26 2014-04-09 太阳能电池用硅晶圆及其制造方法

Country Status (6)

Country Link
JP (1) JP5868437B2 (enExample)
KR (1) KR20160002683A (enExample)
CN (1) CN105144351B (enExample)
SG (1) SG11201508619VA (enExample)
TW (1) TW201444955A (enExample)
WO (1) WO2014175072A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232829A (ja) * 2013-05-30 2014-12-11 日本化成株式会社 太陽電池用シリコンウエハーの製造方法
JP6898737B2 (ja) * 2014-12-15 2021-07-07 シャープ株式会社 半導体基板の製造方法、光電変換素子の製造方法および光電変換素子
TWI538986B (zh) * 2015-07-15 2016-06-21 綠能科技股份有限公司 蝕刻液以及矽基板的表面粗糙化的方法
WO2017091572A1 (en) 2015-11-23 2017-06-01 Entegris, Inc. Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
CN108183067A (zh) * 2018-01-05 2018-06-19 苏州同冠微电子有限公司 一种半导体晶圆的处理方法
CN111748806B (zh) * 2020-07-21 2022-08-23 江苏悦锌达新材料有限公司 一种用于聚苯硫醚及其复合材料的粗化液及其制备方法和使用方法
CN112233967B (zh) * 2020-10-15 2024-05-03 扬州扬杰电子科技股份有限公司 一种改善背面金属与衬底Si脱落异常的加工方法
CN120786990A (zh) * 2024-04-09 2025-10-14 浙江晶科能源有限公司 分片电池及其形成方法、光伏组件

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411612A (zh) * 1999-12-22 2003-04-16 默克专利有限公司 粗蚀刻硅太阳能电池的工艺
EP1855322A1 (en) * 2005-01-18 2007-11-14 Sharp Kabushiki Kaisha Crystalline silicon wafer, crystalline silicon solar cell, method for manufacturing crystalline silicon wafer and method for manufacturing crystalline silicon solar cell
CN102447003A (zh) * 2010-10-08 2012-05-09 金炳埈 制造太阳能电池的方法以及用该方法制造的太阳能电池
WO2012102368A1 (ja) * 2011-01-27 2012-08-02 京セラ株式会社 太陽電池素子の製造方法、太陽電池素子、および太陽電池モジュール
CN102656250A (zh) * 2009-09-21 2012-09-05 巴斯夫欧洲公司 含水酸性蚀刻溶液和使单晶和多晶硅衬底的表面纹理化的方法
JP2012169420A (ja) * 2011-02-14 2012-09-06 Sumco Corp 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法および太陽電池モジュールの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270400A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
JP4024934B2 (ja) 1998-08-10 2007-12-19 住友電気工業株式会社 ワイヤーソー及びその製造方法
JP2004503081A (ja) 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウェーハのエッチング方法
JP2004063954A (ja) 2002-07-31 2004-02-26 Sumitomo Mitsubishi Silicon Corp シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法
JP3870896B2 (ja) * 2002-12-11 2007-01-24 株式会社デンソー 半導体装置の製造方法およびそれにより製造される半導体装置
JP4231049B2 (ja) 2003-10-10 2009-02-25 三益半導体工業株式会社 ウェーハの粗面処理方法
JP4430488B2 (ja) 2004-09-02 2010-03-10 シャープ株式会社 太陽電池及びその製造方法
US8222118B2 (en) * 2008-12-15 2012-07-17 Intel Corporation Wafer backside grinding with stress relief
DE102010012044A1 (de) * 2010-03-19 2011-09-22 Friedrich-Schiller-Universität Jena Strukturierte Siliziumschicht für ein optoelektronisches Bauelement und optoelektronisches Bauelement
JP2011255475A (ja) 2010-06-11 2011-12-22 Takatori Corp 固定砥粒ワイヤ
JP2012024866A (ja) 2010-07-21 2012-02-09 Sumco Corp ワイヤソー切断スラッジの回収方法およびその装置
JP2012222300A (ja) * 2011-04-13 2012-11-12 Panasonic Corp テクスチャ形成面を有するシリコン基板、およびその製造方法
JP5780856B2 (ja) 2011-06-30 2015-09-16 京セラ株式会社 積層セラミックコンデンサ
JP2013043268A (ja) 2011-08-26 2013-03-04 Sharp Corp 固定砥粒ワイヤおよび半導体基板の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1411612A (zh) * 1999-12-22 2003-04-16 默克专利有限公司 粗蚀刻硅太阳能电池的工艺
EP1855322A1 (en) * 2005-01-18 2007-11-14 Sharp Kabushiki Kaisha Crystalline silicon wafer, crystalline silicon solar cell, method for manufacturing crystalline silicon wafer and method for manufacturing crystalline silicon solar cell
CN102656250A (zh) * 2009-09-21 2012-09-05 巴斯夫欧洲公司 含水酸性蚀刻溶液和使单晶和多晶硅衬底的表面纹理化的方法
CN102447003A (zh) * 2010-10-08 2012-05-09 金炳埈 制造太阳能电池的方法以及用该方法制造的太阳能电池
WO2012102368A1 (ja) * 2011-01-27 2012-08-02 京セラ株式会社 太陽電池素子の製造方法、太陽電池素子、および太陽電池モジュール
JP2012169420A (ja) * 2011-02-14 2012-09-06 Sumco Corp 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法および太陽電池モジュールの製造方法

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Publication number Publication date
KR20160002683A (ko) 2016-01-08
JP2014225633A (ja) 2014-12-04
WO2014175072A1 (ja) 2014-10-30
TW201444955A (zh) 2014-12-01
JP5868437B2 (ja) 2016-02-24
CN105144351A (zh) 2015-12-09
SG11201508619VA (en) 2015-12-30

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