KR20160002683A - 태양전지용 실리콘 웨이퍼 및 그 제조 방법 - Google Patents

태양전지용 실리콘 웨이퍼 및 그 제조 방법 Download PDF

Info

Publication number
KR20160002683A
KR20160002683A KR1020157022409A KR20157022409A KR20160002683A KR 20160002683 A KR20160002683 A KR 20160002683A KR 1020157022409 A KR1020157022409 A KR 1020157022409A KR 20157022409 A KR20157022409 A KR 20157022409A KR 20160002683 A KR20160002683 A KR 20160002683A
Authority
KR
South Korea
Prior art keywords
acid
weight
silicon wafer
sulfuric acid
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020157022409A
Other languages
English (en)
Korean (ko)
Inventor
마사히코 이케우치
다다시 엔도
오사무 쓰다
Original Assignee
가부시키가이샤 티케이엑스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 티케이엑스 filed Critical 가부시키가이샤 티케이엑스
Publication of KR20160002683A publication Critical patent/KR20160002683A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H01L31/182—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire
    • H01L21/30604—
    • H01L21/78—
    • H01L31/18—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • Chemical & Material Sciences (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • ing And Chemical Polishing (AREA)
KR1020157022409A 2013-04-26 2014-04-09 태양전지용 실리콘 웨이퍼 및 그 제조 방법 Ceased KR20160002683A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2013094163 2013-04-26
JPJP-P-2013-094163 2013-04-26
JPJP-P-2014-009159 2014-01-22
JP2014009159A JP5868437B2 (ja) 2013-04-26 2014-01-22 太陽電池用シリコンウエハーの製造方法
PCT/JP2014/060349 WO2014175072A1 (ja) 2013-04-26 2014-04-09 太陽電池用シリコンウエハー及びその製造方法

Publications (1)

Publication Number Publication Date
KR20160002683A true KR20160002683A (ko) 2016-01-08

Family

ID=51791652

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157022409A Ceased KR20160002683A (ko) 2013-04-26 2014-04-09 태양전지용 실리콘 웨이퍼 및 그 제조 방법

Country Status (6)

Country Link
JP (1) JP5868437B2 (enExample)
KR (1) KR20160002683A (enExample)
CN (1) CN105144351B (enExample)
SG (1) SG11201508619VA (enExample)
TW (1) TW201444955A (enExample)
WO (1) WO2014175072A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014232829A (ja) * 2013-05-30 2014-12-11 日本化成株式会社 太陽電池用シリコンウエハーの製造方法
WO2016098701A1 (ja) * 2014-12-15 2016-06-23 シャープ株式会社 半導体基板の製造方法、光電変換素子の製造方法、半導体基板および光電変換素子
TWI538986B (zh) * 2015-07-15 2016-06-21 綠能科技股份有限公司 蝕刻液以及矽基板的表面粗糙化的方法
US10991809B2 (en) 2015-11-23 2021-04-27 Entegris, Inc. Composition and process for selectively etching p-doped polysilicon relative to silicon nitride
CN108183067A (zh) * 2018-01-05 2018-06-19 苏州同冠微电子有限公司 一种半导体晶圆的处理方法
CN111748806B (zh) * 2020-07-21 2022-08-23 江苏悦锌达新材料有限公司 一种用于聚苯硫醚及其复合材料的粗化液及其制备方法和使用方法
CN112233967B (zh) * 2020-10-15 2024-05-03 扬州扬杰电子科技股份有限公司 一种改善背面金属与衬底Si脱落异常的加工方法
CN120786990A (zh) * 2024-04-09 2025-10-14 浙江晶科能源有限公司 分片电池及其形成方法、光伏组件

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270400A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
JP2000052226A (ja) 1998-08-10 2000-02-22 Sumitomo Electric Ind Ltd ワイヤーソー及びその製造方法
JP2004503081A (ja) 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウェーハのエッチング方法
JP2004063954A (ja) 2002-07-31 2004-02-26 Sumitomo Mitsubishi Silicon Corp シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法
WO2005036629A1 (ja) 2003-10-10 2005-04-21 Mimasu Semiconductor Industry Co., Ltd. ウェーハの粗面処理方法
JP2006073832A (ja) 2004-09-02 2006-03-16 Sharp Corp 太陽電池及びその製造方法
JP2011255475A (ja) 2010-06-11 2011-12-22 Takatori Corp 固定砥粒ワイヤ
JP2012024866A (ja) 2010-07-21 2012-02-09 Sumco Corp ワイヤソー切断スラッジの回収方法およびその装置
JP2013012688A (ja) 2011-06-30 2013-01-17 Kyocera Corp 積層セラミックコンデンサ
JP2013043268A (ja) 2011-08-26 2013-03-04 Sharp Corp 固定砥粒ワイヤおよび半導体基板の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19962136A1 (de) * 1999-12-22 2001-06-28 Merck Patent Gmbh Verfahren zur Rauhätzung von Siliziumsolarzellen
JP3870896B2 (ja) * 2002-12-11 2007-01-24 株式会社デンソー 半導体装置の製造方法およびそれにより製造される半導体装置
JP4766880B2 (ja) * 2005-01-18 2011-09-07 シャープ株式会社 結晶シリコンウエハ、結晶シリコン太陽電池、結晶シリコンウエハの製造方法および結晶シリコン太陽電池の製造方法
US8222118B2 (en) * 2008-12-15 2012-07-17 Intel Corporation Wafer backside grinding with stress relief
MY158452A (en) * 2009-09-21 2016-10-14 Basf Se Aqueous acidic etching solution and method for texturing the surface of single crystal and polycrystal silicon substrates
DE102010012044A1 (de) * 2010-03-19 2011-09-22 Friedrich-Schiller-Universität Jena Strukturierte Siliziumschicht für ein optoelektronisches Bauelement und optoelektronisches Bauelement
KR101657626B1 (ko) * 2010-10-08 2016-09-19 주식회사 원익아이피에스 태양전지제조방법 및 그 방법에 의하여 제조된 태양전지
US9123840B2 (en) * 2011-01-27 2015-09-01 Kyocera Corporation Solar cell element manufacturing method, solar cell element, and solar cell module
JP2012169420A (ja) * 2011-02-14 2012-09-06 Sumco Corp 太陽電池用ウェーハの製造方法、太陽電池セルの製造方法および太陽電池モジュールの製造方法
JP2012222300A (ja) * 2011-04-13 2012-11-12 Panasonic Corp テクスチャ形成面を有するシリコン基板、およびその製造方法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09270400A (ja) 1996-01-31 1997-10-14 Shin Etsu Handotai Co Ltd 半導体ウェーハの製造方法
JP2000052226A (ja) 1998-08-10 2000-02-22 Sumitomo Electric Ind Ltd ワイヤーソー及びその製造方法
JP2004503081A (ja) 2000-06-30 2004-01-29 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド シリコンウェーハのエッチング方法
JP2004063954A (ja) 2002-07-31 2004-02-26 Sumitomo Mitsubishi Silicon Corp シリコンウェーハのエッチング方法及びこの方法を用いたシリコンウェーハの表裏面差別化方法
WO2005036629A1 (ja) 2003-10-10 2005-04-21 Mimasu Semiconductor Industry Co., Ltd. ウェーハの粗面処理方法
JP2006073832A (ja) 2004-09-02 2006-03-16 Sharp Corp 太陽電池及びその製造方法
JP2011255475A (ja) 2010-06-11 2011-12-22 Takatori Corp 固定砥粒ワイヤ
JP2012024866A (ja) 2010-07-21 2012-02-09 Sumco Corp ワイヤソー切断スラッジの回収方法およびその装置
JP2013012688A (ja) 2011-06-30 2013-01-17 Kyocera Corp 積層セラミックコンデンサ
JP2013043268A (ja) 2011-08-26 2013-03-04 Sharp Corp 固定砥粒ワイヤおよび半導体基板の製造方法

Also Published As

Publication number Publication date
CN105144351B (zh) 2017-09-26
WO2014175072A1 (ja) 2014-10-30
SG11201508619VA (en) 2015-12-30
CN105144351A (zh) 2015-12-09
TW201444955A (zh) 2014-12-01
JP2014225633A (ja) 2014-12-04
JP5868437B2 (ja) 2016-02-24

Similar Documents

Publication Publication Date Title
JP5868437B2 (ja) 太陽電池用シリコンウエハーの製造方法
AU780184B2 (en) Method for raw etching silicon solar cells
Bidiville et al. Diamond wire-sawn silicon wafers-from the lab to the cell production
US10596681B2 (en) Abrasive article and method of forming
US9533397B2 (en) Abrasive article and method of forming
US20140150766A1 (en) Abrasive article and method of forming
US10137514B2 (en) Abrasive article and method of forming
US9876128B2 (en) Texturing monocrystalline silicon substrates
US20140017985A1 (en) Abrasive article and method of forming
US20140007513A1 (en) Abrasive article and method of forming
US20160096248A1 (en) Ingot and methods for ingot grinding
TW201231742A (en) Modification process for nano-structuring ingot surface, wafer manufacturing method and wafer thereof
KR102852864B1 (ko) 반도체 재료로 제조된 원통형 로드로부터 디스크들을 생산하기 위한 방법
KR102514017B1 (ko) 태양전지 기판의 습식 텍스쳐링 방법
JPWO2006134779A1 (ja) シリコンウェーハ熱処理用石英ガラス治具及びその製造方法
WO2009125187A1 (en) A method of etching silicon wafers
KR20110033792A (ko) Ｃｕ-Ｇａ 합금으로 이루어지는 스퍼터링 타겟의 제조 방법
US20090060821A1 (en) Method for manufacturing silicone wafers
WO2018025539A1 (ja) シリコンインゴットの切断方法、シリコンウェーハの製造方法およびシリコンウェーハ
CN102732969A (zh) 晶棒表面纳米化制程及其晶圆制造方法
KR102605418B1 (ko) 전착 지석
Thiruvarasu et al. Enhancement of the Efficiency of Silicon Solar Cells through Controlled Chemical Etching
CN112453763A (zh) 一种金刚石磨具的制备方法
CN204955160U (zh) 一种金刚石钎焊线锯
KR102255578B1 (ko) Kerfless 방식으로 제작된 실리콘 웨이퍼의 습식 이단계 표면조직화 방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000