TW201405579A - 透明導電性膜 - Google Patents

透明導電性膜 Download PDF

Info

Publication number
TW201405579A
TW201405579A TW102120190A TW102120190A TW201405579A TW 201405579 A TW201405579 A TW 201405579A TW 102120190 A TW102120190 A TW 102120190A TW 102120190 A TW102120190 A TW 102120190A TW 201405579 A TW201405579 A TW 201405579A
Authority
TW
Taiwan
Prior art keywords
transparent conductive
conductive film
polycrystalline layer
film substrate
layer
Prior art date
Application number
TW102120190A
Other languages
English (en)
Other versions
TWI631578B (zh
Inventor
Daisuke Kajihara
Tomotake Nashiki
Motoki Haishi
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of TW201405579A publication Critical patent/TW201405579A/zh
Application granted granted Critical
Publication of TWI631578B publication Critical patent/TWI631578B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0213—Electrical arrangements not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0326—Organic insulating material consisting of one material containing O
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0145—Polyester, e.g. polyethylene terephthalate [PET], polyethylene naphthalate [PEN]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0158—Polyalkene or polyolefin, e.g. polyethylene [PE], polypropylene [PP]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H05K2201/0326—Inorganic, non-metallic conductor, e.g. indium-tin oxide [ITO]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/07—Electric details
    • H05K2201/0776—Resistance and impedance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1194—Thermal treatment leading to a different chemical state of a material, e.g. annealing for stress-relief, aging
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/14—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation
    • H05K3/16—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using spraying techniques to apply the conductive material, e.g. vapour evaporation by cathodic sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31507—Of polycarbonate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31786—Of polyester [e.g., alkyd, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31855—Of addition polymer from unsaturated monomers
    • Y10T428/31938—Polymer of monoethylenically unsaturated hydrocarbon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Non-Insulated Conductors (AREA)
  • Laminated Bodies (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本發明提供一種透射率較高、且比電阻較小之透明導電性膜。本實施形態之透明導電性膜1具備：膜基材2、及形成於該膜基材上之銦錫氧化物之多晶層3。該多晶層3之厚度為10 nm~30 nm，結晶粒徑之平均值為180 nm~270 nm，且載子密度超過6×1020個/cm3且為9×1020個/cm3以下。

Description

透明導電性膜
本發明係關於一種應用於能藉由手指或觸控筆等之接觸而輸入資訊之輸入顯示裝置等之透明導電性膜。
先前已知於膜基材上形成有銦錫氧化物之多晶層之透明導電性膜(專利文獻1)此種透明導電性膜之比電阻(亦稱為體積電阻率)較低，顯示出優異之導電性。
[先前技術文獻] [專利文獻]
專利文獻1：日本專利特開平09-286070號公報
然而，近年來廣泛利用之智慧型手機(smart phone)或平板電腦(slate PC)等要求具有更優異之特性之透明導電性膜。尤其，於該等用途中，先前之透明導電性膜依然有比電阻較大之課題。
本發明之目的在於提供一種透射率較高、且比電阻較小之透明導電性膜。
為了達成上述目的，本發明之透明導電性膜之特徵在於：其係具有膜基材、及形成於該膜基材上之銦錫氧化物之多晶層者，且上述多晶層之厚度為10nm~30nm，結晶粒徑之平均值為180nm~270 nm，且載子密度超過6×1020個/cm3且為9×1020個/cm3以下。
又，上述多晶層之霍爾移動率為21cm2/V‧sec~30cm2/V‧sec。
又，上述銦錫氧化物之多晶層中之錫原子之量相對於添加有銦原子及錫原子之重量，超過6重量%且為15重量%。
進而，上述膜基材較佳為包含聚對苯二甲酸乙二酯、聚環烯烴或聚碳酸酯。
根據本發明，多晶層之厚度為10nm~30nm，該多晶層之結晶粒徑之平均值為180nm~270nm，且載子密度超過6×1020個/cm3且為9×1020個/cm3以下。即，抑制可因雜質之混合存在而產生之結晶粒徑之減少，藉此可充分抑制霍爾移動率之下降，此外，可實現良好之透射率。因此，可提供一種透射率較高、且比電阻較小之透明導電性膜。
1‧‧‧透明導電性膜
2‧‧‧膜基材
3‧‧‧多晶層
圖1係表示本發明之實施形態之透明導電性膜之構成的剖面圖。
圖2係表示多晶層之結晶粒界之電子顯微鏡圖像。
以下，一面參照圖式，一面詳細說明本發明之實施形態。
如圖1所示，本實施形態之透明導電性膜1具備：膜基材2、及形成於該膜基材上之銦錫氧化物之多晶層3。該多晶層3之厚度為10nm~30nm，結晶粒徑之平均值為180nm~270nm，且載子密度超過6×1020個/cm3且為9×1020個/cm3以下。
此種透明導電性膜之結晶粒徑較大，故而上述電子可於多晶層中移動之電子之量增多，故而比電阻特別減小。進而，多晶層之厚度較薄，故而透射率較高。
膜基材2較佳使用透明性與耐熱性兩者優異者。就製造品質優異之透明導電性膜方面而言，上述膜基材之厚度較佳為10μm~50μm。
作為形成上述膜基材之材料，較佳為聚對苯二甲酸乙二酯、聚環烯烴或聚碳酸酯。上述膜基材於其表面可具有用以提高銦錫氧化物之多晶層與膜基材之密著性之易接著層(anchor coating layer)、用以調整膜基材之反射率之折射率調整層(index-matching layer)、或用以提高膜基材之耐擦傷性之硬塗層(hard coating layer)。
多晶層3代表而言可藉由利用濺鍍法於膜基材之表面形成銦錫氧化物之非晶質層，並對該非晶質層進行加熱處理而獲得。
上述濺鍍法係藉由使於低壓氣體中產生之電漿中之陽離子與作為負電極之靶材碰撞，而使自上述靶材表面飛散之物質附著於基板上的方法。
該多晶層3之結晶粒徑之平均值為180nm~270nm，較佳為190nm~250nm。上述多晶層藉由具有此種尺寸之結晶粒(grain)，而使該多晶層中之電子容易移動，比電阻減小。該情形之多晶層之霍爾移動率為21cm2/V‧sec~30cm2/V‧sec，較佳為24cm2/V‧sec~28cm2/V‧sec。
上述尺寸之結晶粒可藉由如下方式而獲得：以極力減少銦錫氧化物之非晶質層中所混入之雜質之方式使該非晶質層成膜，其後對該非晶質層進行加熱處理。再者，作為減少混入上述非晶質層中之雜質之量的方法，具體而言，例如可列舉：將成膜銦錫氧化物之非晶質層之濺鍍裝置的真空度減壓為5×10-5Pa以下，除去膜基材中之揮發成分(水分或有機氣體)的方法。
上述多晶層之載子密度超過6×1020個/cm3且為9×1020個/cm3以下，較佳為6.5×1020個/cm3~8×1020個/cm3。此種多晶層之可於該多晶層中移動之電子的量增多，故而比電阻減小。
顯示出此種載子密度之多晶層可藉由如下方式獲得：使銦錫氧化物之非晶質層中之錫原子的量相對於加上銦原子及錫原子之重量調整為超過6重量%且為15重量%以下，較佳為7重量%~12重量%，且對該非晶質層進行加熱處理以使結晶粒較大成長。
滿足上述尺寸之結晶粒徑及載子密度之條件的多晶層之比電阻未達4.0×10-4Ω‧cm，較佳為3.0×10-4Ω‧cm~3.8×10-4Ω‧cm。
根據本實施形態，多晶層之厚度為10nm~30nm，該多晶層之結晶粒徑之平均值為180nm~270nm，且載子密度超過6×1020個/cm3且為9×1020個/cm3以下。即，藉由抑制可因雜質之混入而產生之結晶粒徑的減少，可充分抑制霍爾移動率之降低，此外可實現良好之透射率。因此，可提供透射率較高、且比電阻較小之透明導電性膜。
實施例
繼而，說明本發明之實施例。
首先，將厚度23μm之包含聚對苯二甲酸乙二酯膜之膜基材放入濺鍍裝置中，將該濺鍍裝置之真空度減壓為5×10-5Pa，除去該濺鍍裝置內以及膜基材中之水分及有機氣體。其後，於上述濺鍍裝置內導入氬氣98體積%及氧氣2體積%之混合氣體，於膜基材之一側，使非晶質層中之錫原子之量相對於加上銦原子及錫原子之重量為10重量%之方式，形成厚度25nm之銦錫氧化物之非晶質層。
並且，將形成有銦錫氧化物之非晶質層之膜基材自濺鍍裝置取出，於140℃之加熱烘箱中對該非晶質層進行加熱處理90分鐘，藉此使其結晶化，獲得結晶粒徑之平均值為207nm之多晶層。
繼而，藉由以下之方法，對上述實施例1之透明導電性膜進行測定‧評估。
(1)結晶粒徑之平均值
利用透射型電子顯微鏡(日立製作所製造，製品名「H-7650」)， 以直接倍率100,000倍觀察多晶層之表面，以加速電壓10kV進行照相攝影。對該照片實施圖像解析處理，進行結晶粒界之識別。將該圖像解析處理後之圖像示於圖2。並且，基於本識別之結果，以各結晶粒之形狀中最長徑作為粒徑(nm)，求出其平均值。
(2)載子密度及霍爾移動率
使用霍爾效果測定系統(BIO-RAD公司製造，製品名「HL5500PC」)測定多晶層之載子密度及霍爾密度。
(3)比電阻
以藉由4端子法求出之表面電阻值乘以該多晶層之厚度求出多晶層之比電阻。
(4)加熱處理後之結晶性
利用透射型電子顯微鏡(日立製作所製造，製品名「H-7650」)，觀察結晶粒之有無。
將上述(1)~(4)之測定‧評估結果示於表1。再者，作為表1之參考例，記載有日本專利特開平09-286070號公報所揭示之實施例4中之透明導電性膜的特性。
根據表1可知，實施例之透明導電性膜中，由於形成有粒徑較大之結晶粒，因此霍爾移動率之值與作為非晶質之參考例同等，且載子密度之值大幅增加，其結果比電阻減小。因此，根據本實施例可知， 可製作透射率較高、且比電阻較小之透明導電性膜。
[產業上之可利用性]
本發明之透明導電性膜並無特別限制，較佳用於智慧型手機或平板電腦。
1‧‧‧透明導電性膜
2‧‧‧膜基材
3‧‧‧多晶層

Claims (4)

  1. 一種透明導電性膜，其特徵在於：其係具有膜基材、及形成於該膜基材上之銦錫氧化物之多晶層者，且上述多晶層之厚度為10nm~30nm，結晶粒徑之平均值為180nm~270nm，且載子密度超過6×1020個/cm3且為9×1020個/cm3以下。
  2. 如請求項1之透明導電性膜，其中上述多晶層之霍爾移動率為21cm2/V‧sec~30cm2/V‧sec。
  3. 如請求項1或2之透明導電性膜，其中上述銦錫氧化物之多晶層中之錫原子之量相對於加上銦原子及錫原子之重量，超過6重量%且為15重量%以下。
  4. 如請求項1至3中任一項之透明導電性膜，其中上述膜基材包含聚對苯二甲酸乙二酯、聚環烯烴或聚碳酸酯。
TW102120190A 2012-06-07 2013-06-06 Transparent conductive film TWI631578B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-129916 2012-06-07
JP2012129916 2012-06-07

Publications (2)

Publication Number Publication Date
TW201405579A true TW201405579A (zh) 2014-02-01
TWI631578B TWI631578B (zh) 2018-08-01

Family

ID=49711956

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102120190A TWI631578B (zh) 2012-06-07 2013-06-06 Transparent conductive film

Country Status (6)

Country Link
US (1) US20150086789A1 (zh)
JP (2) JPWO2013183564A1 (zh)
KR (2) KR20140041873A (zh)
CN (1) CN103999166B (zh)
TW (1) TWI631578B (zh)
WO (1) WO2013183564A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI554623B (zh) * 2014-05-20 2016-10-21 Nitto Denko Corp Transparent conductive film
US10720264B2 (en) 2015-11-09 2020-07-21 Nitto Denko Corporation Light transmitting conductive film and light control film

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106460153B (zh) * 2014-04-30 2019-05-10 日东电工株式会社 透明导电性膜及其制造方法
US20170051398A1 (en) * 2014-04-30 2017-02-23 Nitto Denko Corporation Transparent conductive film and method for producing the same
JP6211557B2 (ja) * 2014-04-30 2017-10-11 日東電工株式会社 透明導電性フィルム及びその製造方法
US10133428B2 (en) * 2015-05-29 2018-11-20 Samsung Display Co., Ltd. Flexible display device including a flexible substrate having a bending part and a conductive pattern at least partially disposed on the bending part
JP6159490B1 (ja) * 2015-09-30 2017-07-05 積水化学工業株式会社 光透過性導電フィルム、及び、アニール処理された光透過性導電フィルムの製造方法
USD806664S1 (en) 2015-11-18 2018-01-02 Samsung Electronics Co., Ltd. Television
USD806662S1 (en) 2015-11-18 2018-01-02 Samsung Electronics Co., Ltd. Television
CN110999532B (zh) * 2017-08-04 2022-06-28 日东电工株式会社 加热器
JP7162461B2 (ja) 2017-08-04 2022-10-28 日東電工株式会社 ヒータ用部材、ヒータ用テープ、及びヒータ用部材付成形体
JP7073588B2 (ja) * 2020-03-19 2022-05-23 日東電工株式会社 透明導電層および透明導電性フィルム
CN118782295A (zh) * 2021-08-06 2024-10-15 日东电工株式会社 层叠体

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6179647A (ja) * 1984-09-28 1986-04-23 帝人株式会社 透明導電性積層体及びその製造方法
JPH07278791A (ja) * 1994-04-15 1995-10-24 Hitachi Ltd 低抵抗透明導電膜
JPH0877845A (ja) * 1994-09-01 1996-03-22 Hitachi Ltd 膜の作製方法および膜の改質方法
JP4010587B2 (ja) 1995-12-20 2007-11-21 三井化学株式会社 透明導電性積層体及びそれを用いたエレクトロルミネッセンス発光素子
JP2001152323A (ja) * 1999-11-29 2001-06-05 Canon Inc 透明電極および光起電力素子の作製方法
JP2002041243A (ja) * 2000-07-21 2002-02-08 Nippon Soda Co Ltd 透明導電膜
JP3785109B2 (ja) * 2002-04-08 2006-06-14 日東電工株式会社 透明導電積層体の製造方法
JP3749531B2 (ja) * 2003-08-29 2006-03-01 日東電工株式会社 透明導電積層体の製造方法
CN100460943C (zh) * 2004-06-03 2009-02-11 日东电工株式会社 透明导电性膜
TW200745923A (en) * 2005-10-20 2007-12-16 Nitto Denko Corp Transparent conductive laminate body and touch panel equipped with above
JP4861707B2 (ja) * 2006-01-20 2012-01-25 日東電工株式会社 透明導電積層体
JP5166700B2 (ja) * 2006-01-30 2013-03-21 日東電工株式会社 結晶性透明導電性薄膜、その製造方法、透明導電性フィルムおよびタッチパネル
TWI445624B (zh) * 2009-06-03 2014-07-21 Toyo Boseki 透明導電性積層薄膜
JP4888604B2 (ja) * 2009-10-13 2012-02-29 東洋紡績株式会社 透明導電性積層フィルム
GB201000693D0 (en) * 2010-01-15 2010-03-03 Isis Innovation A solar cell
JP5224073B2 (ja) * 2010-03-26 2013-07-03 住友金属鉱山株式会社 酸化物蒸着材とその製造方法
JP5543907B2 (ja) * 2010-12-24 2014-07-09 日東電工株式会社 透明導電性フィルムおよびその製造方法
JP2013152827A (ja) * 2012-01-24 2013-08-08 Kaneka Corp 透明電極付き基板およびその製造方法
WO2013111681A1 (ja) * 2012-01-27 2013-08-01 株式会社カネカ 透明電極付き基板およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI554623B (zh) * 2014-05-20 2016-10-21 Nitto Denko Corp Transparent conductive film
US10720264B2 (en) 2015-11-09 2020-07-21 Nitto Denko Corporation Light transmitting conductive film and light control film
TWI716486B (zh) * 2015-11-09 2021-01-21 日商日東電工股份有限公司 透光性導電膜及調光膜

Also Published As

Publication number Publication date
JP2015108192A (ja) 2015-06-11
TWI631578B (zh) 2018-08-01
KR101814375B1 (ko) 2018-01-04
CN103999166A (zh) 2014-08-20
KR20160150108A (ko) 2016-12-28
WO2013183564A1 (ja) 2013-12-12
KR20140041873A (ko) 2014-04-04
JPWO2013183564A1 (ja) 2016-01-28
CN103999166B (zh) 2018-01-09
US20150086789A1 (en) 2015-03-26
JP6031495B2 (ja) 2016-11-24

Similar Documents

Publication Publication Date Title
TWI631578B (zh) Transparent conductive film
TWI473120B (zh) Transparent conductive film
TWI567755B (zh) Method for manufacturing transparent conductive film
Álvarez-Fraga et al. Indium-tin oxide thin films deposited at room temperature on glass and PET substrates: Optical and electrical properties variation with the H2–Ar sputtering gas mixture
TW201438921A (zh) 透明導電性基材以及其製造方法
TW201408796A (zh) 導電性膜
JPWO2014098131A1 (ja) 透明電極付き基板およびその製造方法
CN103451618B (zh) 一种透明导电氧化物膜层的制备方法
CN103928082A (zh) 一种导电膜及其制备方法
TW201606386A (zh) 顯示面板
TW201425645A (zh) 轉印石墨烯層之方法
TW201342400A (zh) 透明導電性薄膜
JP6841149B2 (ja) 金属酸化物透明導電膜及びその製造方法
JP5881681B2 (ja) 酸化物型半導体材料及びスパッタリングターゲット
hee Kwon et al. Dependence of electrical and mechanical durability on Zn content and heat treatment for co-sputtered ITZO films
TW201545176A (zh) 積層體、導電性積層體、及電子機器
JP6404064B2 (ja) 透明導電性フィルム及びその製造方法
Lin et al. The functional sequence of hydrogen in electronic conduction of sol–gel derived Al-doped ZnO films as determined via impedance spectroscopy
CN114230898B (zh) 一种石墨烯透明导电薄膜及其制备方法和应用
WO2015186507A1 (ja) 透明導電性フィルム
KR101492215B1 (ko) RF/DC 동시인가 마그네트론 스퍼터링법을 이용한 ITO:Ce 초박막, 이의 제조방법 및 이를 포함하는 터치 패널
Ali et al. Characterization of ITO/Ag and ITO/Ni Bi-Layer Transparent Conductive Electrodes
JP2016072036A (ja) 透明積層基材および素子
KR20200065476A (ko) 은나노 와이어 기반의 투명전극 및 이의 제조방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees