CN103999166A - 透明导电性膜 - Google Patents

透明导电性膜 Download PDF

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CN103999166A
CN103999166A CN201380004245.5A CN201380004245A CN103999166A CN 103999166 A CN103999166 A CN 103999166A CN 201380004245 A CN201380004245 A CN 201380004245A CN 103999166 A CN103999166 A CN 103999166A
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conductive film
transparent
electrically conductive
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polycrystal layer
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CN103999166B (zh
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梶原大辅
梨木智刚
拝师基希
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Nitto Denko Corp
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Abstract

本发明提供一种透射率高且电阻率小的透明导电性膜。本实施方式的透明导电性膜(1)具有膜基材(2)和形成于该膜基材上的铟锡氧化物多晶层(3)。该多晶层(3)的厚度为10nm～30nm，晶体粒径的平均值为180nm～270nm，并且载流子密度大于6×1020个/cm3且在9×1020个/cm3以下。

Description

透明导电性膜
技术领域
本发明涉及适用于通过手指或触控笔(stylus pen)等的接触能够输入信息的输入显示装置等的透明导电性膜。
背景技术
以往已知一种在膜基材上形成有铟锡氧化物多晶层的透明导电性膜(专利文献1)。这样的透明导电性膜具有低电阻率(也称为体积电阻率)，并且显示优异的导电性。
现有技术文献
专利文献
专利文献1：特开平09-286070号公报
发明内容
发明要解决的问题
但是，近年来广泛利用的智能手机(smart phone)或平板电脑(slate PC)等要求具有更优异特性的透明导电性膜。特别是在这些用途中，以往的透明导电性膜仍然存在电阻率大的问题。
本发明的目的在于提供透射率高，且电阻率小的透明导电性膜。
解决问题的技术手段
为了实现上述目的，本发明的透明导电性膜是具有膜基材和形成于该膜基材上的铟锡氧化物多晶层的透明导电性膜，其特征在于，所述多晶层的厚度为10nm～30nm，晶体粒径的平均值为180nm～270nm，并且载流子密度(carrierdensity)大于6×1020个/cm3且在9×1020个/cm3以下。
另外，所述多晶层的霍尔迁移率(Hall mobility)是21cm2/V·sec～30cm2/V·sec。
另外，所述铟锡氧化物多晶层中锡原子的量相对于铟原子和锡原子的总重量大于6重量％且在15重量％以下。
另外，所述膜基材优选由聚对苯二甲酸乙二醇酯、聚环烯烃(polycycloolefin)或聚碳酸酯组成。
发明效果
根据本发明，多晶层的厚度是10nm～30nm，该多晶层的晶体粒径平均值是180nm～270nm，并且载流子密度大于6×1020个/cm3且在9×1020个/cm3以下。即，通过抑制因杂质的混合所会引起的晶体粒径减小，能够充分抑制霍尔迁移率的降低，此外还能够实现良好的透射率。因此，能够提供一种透射率高且电阻率小的透明导电性膜。
附图说明
图1是表示本发明的实施方式所涉及的透明导电性膜的结构的剖面图。
图2是表示多晶层的晶界的电子显微镜图像。
具体实施方式
以下一边参照附图一边详细说明本发明的实施方式。
如图1所式，本实施方式的透明导电性膜1具有膜基材2和形成于该膜基材上的铟锡氧化物多晶层3。该多晶层3的厚度为10nm～30nm，晶体粒径的平均值为180nm～270nm，并且载流子密度大于6×1020个/cm3且在9×1020个/cm3以下。
这样的透明导电性膜由于晶体粒径大，上述电子中能够在多晶层中移动的电子量变多，所以，电阻率显著变小。另外，由于多晶层的厚度薄，所以透射率高。
膜基材2优选使用透明性和耐热性两者都优异的材料。在制造质量优异的透明导电性膜方面，上述膜基材的厚度优选为10μm～50μm。
作为形成上述膜基材的材料，优选为聚对苯二甲酸乙二醇酯、聚环烯烃或聚碳酸酯。上述膜基材可以在其表面具有用于提高铟锡氧化物多晶层和膜基材的粘合性的易粘结层(anchor coating layer)、用于调整膜基材的反射率的折射率调整层(index-matching layer)、或用于提高膜基材的耐擦伤性的硬涂层(hard coatinglayer)。
多晶层3可以代表性地通过如下方法得到，即，利用溅射法在膜基材表面形成铟锡氧化物非晶层，并对该非晶层进行加热处理。
上述溅射法是通过使在低压气体中产生的等离子体中的阳离子冲击作为负电极的靶材，从而使自上述靶材表面飞散的物质附着于基板的方法。
该多晶层3的晶体粒径平均值是180nm～270nm，优选为190nm～250nm。上述多晶层由于具有这样大小的晶粒(grain)，所以该多晶层中的电子变得容易移动，并且电阻率变小。此种情况下的多晶层的霍尔迁移率为21cm2/V·sec～30cm2/V·sec，优选为24cm2/V·sec～28cm2/V·sec。
上述大小的晶粒可以通过如下方法得到：以进入铟锡氧化物非晶层中的杂质变得极少的方式使该非晶层成膜，然后，对该非晶层进行加热处理。需要说明的是，作为减少进入上述非晶层的杂质量的方法，例如具体可以举出将使铟锡氧化物非晶层成膜的溅射装置的真空度降至5×10-5Pa以下，以除去膜基材中的挥发成分(水分或有机气体)的方法。
上述多晶层的载流子密度大于6×1020个/cm3且在9×1020个/cm3以下，优选为6.5×1020个/cm3～8×1020个/cm3。这样的多晶层由于能够在该多晶层中移动的电子量变多，所以电阻率变小。
显示这样的载流子密度的多晶层可以通过以下方法得到：将铟锡氧化物非晶层中锡原子的量调整成相对于铟原子和锡原子的总重量大于6重量％且在15重量％以下，优选调整成7重量％～12重量％，并且对该非晶层进行加热处理，以使晶粒生长为较大。
满足上述大小的晶体粒径以及载流子密度的条件的多晶层的电阻率低于4.0×10-4Ω·cm，优选为3.0×10-4Ω·cm～3.8×10-4Ω·cm。
根据本实施方式，多晶层的厚度是10nm～30nm，该多晶层的晶体粒径平均值是180nm～270nm，并且载流子密度大于6×1020个/cm3且在9×1020个/cm3以下。即，通过抑制因杂质的混入而会引起的晶体粒径的减小，能够充分抑制霍尔迁移率的降低，此外还能够实现良好的透射率。因此，能够提供透射率高且电阻率小的透明导电性膜。
实施例
下面说明本发明的实施例。
首先，将膜基材放入溅射装置，所述膜基材由厚度为23μm的聚对苯二甲酸乙二醇酯膜构成，对该溅射装置进行减压，使其真空度达到5×10-5Pa，以除去该溅射装置内及膜基材中的水分和有机气体。然后，向上述溅射装置内导入98体积％氩气和2体积％氧气的混合气体，在膜基材的一侧形成厚度为25nm的铟锡氧化物非晶层，该非晶层中锡原子的量相对于铟原子和锡原子的总重量为10重量％。
然后，从溅射装置取出形成有铟锡氧化物非晶层的膜基材，利用加热至140℃的烤箱对该非晶层进行90分钟加热处理，从而使其结晶化，得到晶体粒径的平均值为207nm的多晶层。
接下来，利用以下方法测定并评价上述实施例1的透明导电性膜。
(1)晶体粒径的平均值
利用透射电子显微镜(日立制作所制造产品名“H-7650”)以倍率100,000倍直接观察多晶层的表面，并以加速电压10kV进行照相摄影。对该照片实施图像分析处理，识别晶界。图2示出该图像分析处理后的图像。并且，基于该识别结果，以各晶粒形状中最长径作为粒径(nm)，求出其平均值。
(2)载流子密度及霍尔迁移率
使用霍尔效应测定系统(BIO-RAD公司制造产品名“HL5500PC”)测定多晶层的载流子密度及霍尔密度(hall density)。
(3)电阻率
将通过四端子法求出的表面电阻值乘以多晶层的厚度，从而求出多晶层的电阻率。
(4)加热处理后的结晶性
利用透射电子显微镜(日立制作所制造产品名“H-7650”)观察晶粒的有无。
将上述(1)～(4)的测定、评价结果示于表1。另外，作为表1的参考例，记载有特开平09-286070号公报所公开的实施例4中的透明导电性膜的特性。
[表1]
实施例 参考例
锡原子的量(重量％) 10 10
载流子密度(×1020个/cm3) 7.3 0.56
霍尔迁移率(cm2/V·sec) 26 31
电阻率(×10-4Ω·cm) 3.3 36
加热处理后的结晶性 多晶 非晶质
从表1可知，在实施例的透明导电性膜中形成有粒径大的晶粒，所以，霍尔迁移率值与非晶质的参考例同等，并且载流子密度值大幅度增大，结果电阻率变小。因此，可知根据本实施例，能够制作透射率高且电阻率小的透明导电性膜。
产业上的可利用性
本发明的透明导电性膜的使用没有特别限制，但优选用于智能手机或平板电脑。
符号说明
1 透明导电性膜
2 膜基材
3 多晶层

Claims (4)

1.一种透明导电性膜，该透明导电性膜具有膜基材和形成于该膜基材上的铟锡氧化物多晶层，其特征在于，
所述多晶层的厚度为10nm～30nm，晶体粒径的平均值为180nm～270nm，并且载流子密度大于6×1020个/cm3且在9×1020个/cm3以下。
2.根据权利要求1所述的透明导电性膜，其特征在于，所述多晶层的霍尔迁移率为21cm2/V·sec～30cm2/V·sec。
3.根据权利要求1或2所述的透明导电性膜，其特征在于，所述铟锡氧化物多晶层中锡原子的量相对于铟原子和锡原子的总重量大于6重量％且在15重量％以下。
4.根据权利要求1～3中任一项所述的透明导电性膜，其特征在于，所述膜基材由聚对苯二甲酸乙二醇酯、聚环烯烃或聚碳酸酯构成。
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