TW201318226A - 表面安裝型發光裝置 - Google Patents
表面安裝型發光裝置 Download PDFInfo
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- TW201318226A TW201318226A TW101126825A TW101126825A TW201318226A TW 201318226 A TW201318226 A TW 201318226A TW 101126825 A TW101126825 A TW 101126825A TW 101126825 A TW101126825 A TW 101126825A TW 201318226 A TW201318226 A TW 201318226A
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- 239000011342 resin composition Substances 0.000 claims abstract description 76
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- 238000007789 sealing Methods 0.000 claims description 23
- 239000003822 epoxy resin Substances 0.000 claims description 22
- 229920000647 polyepoxide Polymers 0.000 claims description 22
- 238000000465 moulding Methods 0.000 claims description 20
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- 239000000203 mixture Substances 0.000 claims description 10
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
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- CJZGTCYPCWQAJB-UHFFFAOYSA-L calcium stearate Chemical compound [Ca+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O CJZGTCYPCWQAJB-UHFFFAOYSA-L 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
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- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
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- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 125000003963 dichloro group Chemical group Cl* 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- NJLLQSBAHIKGKF-UHFFFAOYSA-N dipotassium dioxido(oxo)titanium Chemical compound [K+].[K+].[O-][Ti]([O-])=O NJLLQSBAHIKGKF-UHFFFAOYSA-N 0.000 description 2
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- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- OLMLFDHMSIYSRF-UHFFFAOYSA-N 1,1-dichlorobut-2-ene Chemical compound CC=CC(Cl)Cl OLMLFDHMSIYSRF-UHFFFAOYSA-N 0.000 description 1
- ZEOVXNVKXIPWMS-UHFFFAOYSA-N 2,2-dichloropropane Chemical compound CC(C)(Cl)Cl ZEOVXNVKXIPWMS-UHFFFAOYSA-N 0.000 description 1
- MFAWEYJGIGIYFH-UHFFFAOYSA-N 2-[4-(trimethoxymethyl)dodecoxymethyl]oxirane Chemical compound C(C1CO1)OCCCC(C(OC)(OC)OC)CCCCCCCC MFAWEYJGIGIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- XTDKZSUYCXHXJM-UHFFFAOYSA-N 2-methoxyoxane Chemical compound COC1CCCCO1 XTDKZSUYCXHXJM-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- SXPGQGNWEWPWQZ-UHFFFAOYSA-N 4-(triethoxymethyl)dodecan-1-amine Chemical compound NCCCC(C(OCC)(OCC)OCC)CCCCCCCC SXPGQGNWEWPWQZ-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- DFYGYTNMHPUJBY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane-1-thiol Chemical compound SCCCC(C(OC)(OC)OC)CCCCCCCC DFYGYTNMHPUJBY-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
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- 229930185605 Bisphenol Natural products 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XYSNGNNDJGSUMY-UHFFFAOYSA-N C(C1CO1)OCCCC(C(OCC)(OCC)C)CCCCCCCC Chemical compound C(C1CO1)OCCCC(C(OCC)(OCC)C)CCCCCCCC XYSNGNNDJGSUMY-UHFFFAOYSA-N 0.000 description 1
- ISDMSQWWTATPKU-UHFFFAOYSA-N CC1(C(C(C(CCCCCC1)(C)C)(C)C)(C)C)C Chemical compound CC1(C(C(C(CCCCCC1)(C)C)(C)C)(C)C)C ISDMSQWWTATPKU-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- OTKWPIUTSKOYMD-UHFFFAOYSA-N ClC(CCCCCCCCCC1=CC=CC=C1)(Cl)Cl Chemical compound ClC(CCCCCCCCCC1=CC=CC=C1)(Cl)Cl OTKWPIUTSKOYMD-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000013006 addition curing Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000004844 aliphatic epoxy resin Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- FNAQSUUGMSOBHW-UHFFFAOYSA-H calcium citrate Chemical compound [Ca+2].[Ca+2].[Ca+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O FNAQSUUGMSOBHW-UHFFFAOYSA-H 0.000 description 1
- 239000001354 calcium citrate Substances 0.000 description 1
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- 239000003086 colorant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
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- 239000012362 glacial acetic acid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N glyceric acid Chemical class OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 150000002430 hydrocarbons Chemical group 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 125000000687 hydroquinonyl group Chemical group C1(O)=C(C=C(O)C=C1)* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate Chemical compound [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 1
- 239000011490 mineral wool Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
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- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 235000013337 tricalcium citrate Nutrition 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- XOOUIPVCVHRTMJ-UHFFFAOYSA-L zinc stearate Chemical compound [Zn+2].CCCCCCCCCCCCCCCCCC([O-])=O.CCCCCCCCCCCCCCCCCC([O-])=O XOOUIPVCVHRTMJ-UHFFFAOYSA-L 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
解決課題之手段為一種表面安裝型發光裝置,其係具有:發光元件、將用來搭載發光元件的第一引線及與發光元件電氣連接的第二引線一體成型而成的反射體(reflector)、將發光元件被覆的密封樹脂組成物之硬化物,其特徵為反射體為以熱硬化性樹脂組成物所成型,並形成具有底面與側面之凹部,凹部之側面之樹脂壁厚度為50~500μm,密封樹脂組成物為硬化物之硬度為蕭氏D型(shoreD)30以上的熱硬化性樹脂組成物。藉由本發明可提供一耐衝擊強度高且接著性、耐變色性良好的表面安裝型發光裝置。
Description
本發明為關於一種衝撃強度優異且具有優異的耐熱性、耐光性之表面安裝型發光裝置。
LED(Light Emitting Diode)等之光半導體元件已在作為戶外顯示器或車燈、住宅用照明等各種指示器或光源被利用著。作為LED用反射體材料,係大量地使用聚鄰苯二甲醯胺樹脂(PPA)等之熱塑性樹脂。又,將酸酐作為硬化劑之環氧樹脂等,最近亦被使用來作為反射體用材料。另一方面,最近在作為液晶電視之背光或一般照明用之光源,LED元件之高輝度化正急速地進展著。此用途對於LED之可靠性或耐久性亦要求嚴苛,以往以來即作為反射體所使用的PPA等之熱塑性樹脂或液晶聚合物,或著是環氧樹脂等之熱硬化性樹脂時,在同時承受熱與光般之環境下劣化為激烈,由於樹脂會變色且光之反射率會降低,故無法使用來作為反射體。
於專利文獻1~6、8,9中已記載著可使用聚矽氧樹脂或環氧樹脂等之熱硬化性樹脂來作為LED用反射體材料。又,於專利文獻7中記載關於矩陣陣列型反射體。
現在,使用上述熱硬化性樹脂所製造的LED用反射體雖然已實用化,惟形成反射體之側面壁之厚度變得更薄,大多已成為100μm左右者。以往以來即使用的PPA
等之熱塑性樹脂或液晶聚合物之反射體時,即使是側面之厚度變薄,亦由於其樹脂本身為強韌,故未有大問題產生。
相較於此,由於熱硬化性樹脂一般為較熱塑性樹脂脆,使用最近的熱硬化性樹脂所製造的反射體,會產生因為衝撃而會容易被破壞等之缺陷,已成為大問題。
尚,作為本發明關連之以往技術,除了上述文獻可同時舉例下述文獻。
[專利文獻1]日本國特開2006-156704號公報
[專利文獻2]日本國特開2007-329219號公報
[專利文獻3]日本國特開2007-329249號公報
[專利文獻4]日本國特開2008-189827號公報
[專利文獻5]日本國特開2006-140207號公報
[專利文獻6]日本國特開2007-235085號公報
[專利文獻7]日本國特開2007-297601號公報
[專利文獻8]日本國特開2009-21394號公報
[專利文獻9]日本國特開2009-155415號公報
本發明為了改善上述般之問題點,經各種檢討之結
果,藉由使用由熱硬化性樹脂組成物之硬化物所構成的反射體,與作為密封樹脂組成物為具有以蕭氏D型(shoreD)為30以上之硬化物硬度的熱硬化性樹脂組成物,以提供一種衝撃強度優異且具有優異的耐熱性、耐光性之表面安裝型發光裝置作為目的。
本發明團隊為了達成上述目的經深入重複檢討之結果,發現當使用熱硬化性樹脂組成物所成型的反射體之凹部側面之壁厚度變薄時,因為注入於凹部並使硬化的聚矽氧樹脂組成物等密封樹脂組成物之硬化物之硬度而發光裝置之耐衝撃強度會受到大的影響,同時若將使用熱硬化性樹脂組成物所成型的反射體之壁厚度設定為50~500μm時,藉由將密封樹脂組成物之硬化物設定為蕭氏D型(shoreD)硬度30以上,可得到耐衝撃強度高且接著性、耐變色性為良好的表面安裝型發光裝置,本發明係基於上述見解而完成之發明。
因此,本發明為提供如下述所示的表面安裝型發光裝置。
[1]一種表面安裝型發光裝置,其係具有:發光元件、將用來搭載發光元件的第一引線及與發光元件電氣連接的第二引線一體成型而成的反射體、將發光元件被覆的密封樹脂組成物之硬化物,其特徵為反射體為以熱硬化性樹脂組成物所成型,並形成具有底面與側面之凹部,凹部
之側面之樹脂壁厚度為50~500μm,密封樹脂組成物為硬化物之硬度為蕭氏D型(shoreD)30以上的熱硬化性樹脂組成物。
[2]如前述[1]之表面安裝型發光裝置,其中,反射體係藉由將硬化性環氧樹脂組成物、聚矽氧樹脂組成物、或聚矽氧.環氧混成樹脂組成物成型所形成。
[3]如前述[1]之表面安裝型發光裝置,其中,密封樹脂組成物為硬化性聚矽氧樹脂組成物或聚矽氧.環氧混成樹脂組成物。
藉由本發明,可提供耐衝撃強度高且接著性、耐變色性為良好的表面安裝型發光裝置。
在本發明之表面安裝型發光裝置中,反射體為藉由將熱硬化性樹脂組成物成型而得到。
作為本發明之反射體之形成時使用的熱硬化性樹脂組成物,示例如環氧樹脂組成物、聚矽氧樹脂組成物,更如聚矽氧樹脂與環氧樹脂之混成樹脂組成物等。
作為環氧樹脂組成物,環氧樹脂方面可使用雙酚型環氧樹脂、甲酚酚醛型環氧樹脂、脂環式環氧樹脂、脂肪族型環氧樹脂、聯苯型環氧樹脂、芳烷基型環氧樹脂等;作為硬化劑,可使用酸酐、各種苯酚樹脂、各種胺化合物
等。
之中又以含有作為環氧樹脂組成物之三吖衍生物環氧樹脂、酸酐、硬化促進劑之熱硬化性樹脂組成物,由於耐熱性或耐光性優異,故為特宜。
作為聚矽氧樹脂組成物,代表性方面可示例如縮合型或加成型之熱硬化性聚矽氧樹脂組成物。
作為縮合型之聚矽氧樹脂組成物,代表性如含有下述平均組成式(1)所示之聚矽氧樹脂與縮合觸媒者,R1 aSi(OR2)b(OH)cO(4-a-b-c)/2 (1)(式中,R1示為相同或相異之碳數1~20之一價烴基,R2示為相同或相異之碳數1~4之一價烴基,並滿足0.8≦a≦1.5,0≦b≦0.3,0.001≦c≦0.5,0.801≦a+b+c<2之數)。
加成型聚矽氧樹脂組成物,可舉例如含有:含乙烯基之聚矽氧樹脂、作為硬化劑之具有氫矽烷基之聚矽氧樹脂、白金觸媒之聚矽氧樹脂組成物。
作為聚矽氧.環氧混成樹脂組成物,含有三吖衍生物環氧樹脂、聚矽氧樹脂、酸酐、硬化促進劑之熱硬化性環氧.聚矽氧樹脂組成物,硬化性優異且耐熱性、耐光性優異之同時,由於具有良好的強度,故宜。
此情形時,為了得到成型性或良好的硬化物物性,事先使環氧樹脂及/或一分子中具有至少1個環氧基之聚矽氧樹脂與酸酐進行預備反應,亦可使用已提高聚合度者。
特別是,對於搭載發出500nm以下之光的高輝度發光
元件之反射體,係使用聚矽氧樹脂或聚矽氧樹脂與環氧樹脂等之混成樹脂。若使用環氧樹脂或熱塑性的聚鄰苯二甲醯胺等時,由於發光時之發熱或短波長之光而樹脂會分解、進行變色,故光反射率會降低,光之取出效率會降低。
因此,較佳為耐熱性或耐光性為最優異的聚矽氧樹脂。在聚矽氧樹脂之中,又以甲基含有量為多的聚矽氧樹脂為宜。
本發明相關的反射體形成用熱硬化性樹脂組成物中,可摻雜無機填充劑。作為無機填充劑,可使用通常樹脂組成物中所摻雜者。列舉例如,熔融矽石、熔融球狀矽石、結晶性矽石等之矽石類、氧化鋁、氮化矽、氮化鋁、氮化硼、玻璃纖維、三氧化二銻等。此等無機填充劑之平均粒徑或形狀未特別限定,但平均粒徑通常為5~40μm。尚,平均粒徑可藉由雷射光繞射法之粒度分布測定中作為質量平均值D50(或中值粒徑)所求得。特別以使用熔融矽石、熔融球狀矽石,該粒徑雖未特別限定,但就成型性、流動性而言,平均粒徑較佳為4~40μm、特佳為7~35μm。
作為如上述般的反射體形成用熱硬化性樹脂組成物,可使用市售的熱硬化性樹脂組成物。
尚,為了提高反射體之強度、韌性,反射體形成用熱硬化性樹脂組成物中亦可摻雜如下述般者。列舉例如,玻璃纖維或硼矽酸玻璃、如岩綿般的非晶質纖維、如氧化鋁
纖維般的多結晶纖維、鈦酸鉀、矽酸鈣、矽酸玻璃、如硼酸鋁的單結晶纖維,更舉例如硫酸鎂、碳化矽、氮化矽等,任何型式均可。
無機填充劑之摻雜量,相對於樹脂100質量份較佳為50~1200質量份、特佳為300~1000質量份。
為了得到白色的反射體,亦可併用如下述般的白色顏料。
作為白色顏料,較佳為使用二氧化鈦,此二氧化鈦之單位晶格可任意為金紅石型、銳鈦礦型、或板鈦礦型,較佳為使用金紅石型。又,平均粒徑或形狀亦未限定,平均粒徑通常為0.05~5.0μm。上述二氧化鈦,為了提高與樹脂或無機填充劑之相溶性、分散性,可使用Al或Si等之含氫氧化物等來事先進行表面處理。
又,作為白色顏料(白色著色劑),除了二氧化鈦以外,亦可單獨使用鈦酸鉀、氧化鋯、硫化鋅、氧化鋅、氧化鎂等,或與二氧化鈦併用。
白色顏料之摻雜量,相對於樹脂100質量份較佳為10~500質量份、特佳為50~300質量份。
上述無機填充劑,為了加強樹脂與無機填充劑之鍵結強度,可摻雜已事先使用矽烷偶合劑、鈦酸酯偶合劑等之偶合劑施以表面處理者。
作為如此般的偶合劑,較佳使用例如γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二乙氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷等之環
氧官能性烷氧基矽烷;N-β(胺基乙基)-γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷等之胺基官能性烷氧基矽烷;γ-巰基丙基三甲氧基矽烷等之巰基官能性烷氧基矽烷等。尚,關於使用於表面處理之偶合劑之摻雜量及表面處理方法未有特別限制者。
反射體形成用熱硬化性樹脂組成物中,因應所需可進而摻雜各種的添加劑。例如,在不損及本發明效果之範圍內,以改善樹脂性質為目的可添加、摻雜各種的聚矽氧粉末、熱塑性樹脂、熱塑性彈性物、有機合成橡膠、脂肪酸酯、甘油酸酯、硬脂酸鋅、硬脂酸鈣等之內部脫模劑等之添加劑。
使如上述般的熱硬化性樹脂組成物硬化後的硬化物,在350~800nm之光反射率之初期值較佳為80%以上。更佳為90%以上。
作為使用本發明之熱硬化性樹脂組成物來成型反射體之最一般之方法,舉例如低壓轉印成型或壓縮成型法。
尚,本發明之樹脂組成物之成型溫度,較佳為使用130~185℃來進行30~180秒鐘。後硬化亦可使用150~185℃來進行1~8小時。
將在本發明所使用的搭載發光元件用表面安裝型反射體之一實施形態表示如圖1~4。
作為反射體1係以如下述方式成型:將上述熱硬化性樹脂組成物供給於一金屬引線架10之第一及第二引線間之空隙部分,並使形成第一引線之表面及第二引線之前端表面部分為露出之底面之凹形狀,其中,前述金屬引線架10為具有用來搭載發光元件2的第一引線(晶粒墊/die pad)11、及與發光元件2電氣連接的第二引線(用來連接發光元件電極與外部電極之引線)12者。如此般使用熱硬化性樹脂組成物所成型的反射體,示例如作為反射體之凹部為以100~300個左右矩陣狀配列於金屬引線架上之狀態所成型之基板。
若為配列成矩陣狀之反射體基板時,於裁切反射體基板之前,使用聚矽氧晶粒結合劑將發光元件2(其係存在於分別的反射體之凹部之第一引線(晶粒墊)11上者)固定,可藉由例如使用150℃加熱1小時來使發光元件固著。之後,使用金導線3將發光元件2與第二引線12前端予以電氣連接,並將作為密封樹脂組成物4之透明聚矽氧樹脂組成物、聚矽氧.環氧混成樹脂組成物、摻雜有螢光體等之聚矽氧樹脂組成物等,藉由裝填(potting)以流入反射體之凹部,以例如使用120℃、1小時,更以使用150℃、2小時使加熱硬化,來進行密封。以此種密封樹脂組成物之密封係使用藉由裝填(potting)之方法、或轉印成型或壓縮成型等之密封方法,亦可同時形成透鏡形狀等。
之後,使用切割、雷射加工、水刀(water jet)加工
等將配列成矩陣狀之成型基板裁切,並使反射體進行個別片、單體化。
以如此般可得到的本發明之光元件用反射體,係使用熱硬化性樹脂組成物(其係將用來搭載發光元件的第一引線及與發光元件電氣連接的第二引線一體成型而成者)所成型,且形成為具有底面與側面之凹部。成型成矩陣狀時,為了使每單位面積能製造出盡可能多數之反射體,必須使反射體之凹部之側面之樹脂厚度設定為薄。因此,凹部之側面之樹脂壁厚度通常為50~500μm。若較50μm薄時,樹脂厚度過薄,在操作時容易破裂;若較500μm厚時,由於每單位面積之取得個數會減少,故成本會變高。較佳為100~300μm。
在本發明中,如前述般地,作為進行高輝度LED等之發光元件之密封之密封樹脂組成物係使用熱硬化性樹脂組成物。作為此密封用熱硬化性樹脂組成物,可使用聚矽氧樹脂組成物、聚矽氧.環氧混成樹脂組成物等,特佳為使用具有伸長之聚矽氧樹脂組成物。
作為熱硬化性聚矽氧樹脂組成物,有將聚二甲矽氧、甲基.苯基系聚矽氧樹脂等各種的聚矽氧樹脂作為主成分者,依據樹脂之構造不同,可製造出硬化物硬度為可使用蕭氏A型(shoreA)測定之柔軟者至可使用蕭氏D型(shoreD)測定之堅硬者。此情形時,作為硬化型可任意使用加成硬化型、有機過氧化物硬化型等,亦可因應硬化型而使用公知的硬化劑。
作為密封樹脂組成物,較佳為能賦予耐熱性、耐候性、耐光性優異且透明性優異之硬化物;又,密封樹脂組成物中亦可混合由螢光體等所成之群所選出之至少1種以上,其中,上述螢光體為吸收來自於填充料、玻璃纖維、擴散材、顏料、發光元件之光並變換波長者。
作為上述密封用熱硬化性樹脂組成物,係使用該硬化物之蕭氏D型(shoreD)硬度為30以上者,較佳為30~70、更佳為30~60者。
即,作為發光裝置(其係使用以往以來多被利用的熱塑性樹脂製的反射體)之密封樹脂組成物,為了維持耐龜裂性或導線斷(wire open)等之可靠性,故使用硬化物之硬度為蕭氏D型(shoreD)未達30者,惟,本發明為使用以熱硬化性樹脂所製造的反射體情形,作為保護發光元件之密封樹脂必須使用具有蕭氏D型(shoreD)30以上之硬度者。使用蕭氏D型(shoreD)為未達30者所密封的發光裝置,由於外部之衝撃裝置容易被破壞。
此情形時,作為上述熱硬化性樹脂組成物,特別是聚矽氧樹脂組成物,可使用市售品,並可由市售品之中選擇硬化物之蕭氏D型(shoreD)硬度為上述值來使用。
本發明之表面安裝型發光裝置,由於反射體為使用聚矽氧樹脂等之熱硬化性樹脂所成,故耐熱性、耐光性優異,相較於使用以往的聚鄰苯二甲醯胺(PPA)等之熱塑性樹脂所成者,即使是收藏高輝度LED並流通高電流,發光裝置亦不會劣化。因此,可利用於照明器具、顯示
器、液晶電視之背光模組等。
本發明為使用熱硬化性樹脂所製造的反射體,由於與引線架堅固地接著,故相較於熱塑性樹脂對於導線之影響少,即使是以往無法使用的硬度之樹脂,可靠性亦無問題。
以下,藉由合成例、參考例、實施例及比較例更詳細地說明本發明,惟,本發明並不限定於下述實施例。尚,Me示為甲基,Vi示為乙烯基,Ph示為苯基。
將甲基三氯矽烷100質量份、甲苯200質量份置入於1L燒瓶中,並使此等混合液中在冰冷下滴下水8質量份及異丙醇60質量份之混合液。使燒瓶內液溫以-5~0℃花費5~20小時進行滴下,之後將所得到的反應液加熱,以還流溫度攪拌20分鐘。接著,將該反應液冷卻至室溫,並以30℃以下之溫度花費30分鐘將水12質量份滴下,之後攪拌20分鐘。對於所得到的混合液進而滴下水25質量份後,以40~45℃攪拌60分鐘。對於如此般得到的混合液添加水200質量份,並採取分離的有機層。將此有機層洗淨至中性為止,之後藉由供給於共沸脫水、過濾、真空汽提(vacuum stripping),而得到下述式(2)所示以作為無色透明之固體(熔點76℃)36.0質量份之熱硬化性
有機聚矽氧烷(A-1)。
(CH3)1.0Si(OC3H7)0.07(OH)0.10O1.4 (2)
混合二甲基二氯矽烷129質量份、八甲基環狀矽氧烷1483質量份,並滴下發煙硝酸26質量份,以30~35℃攪拌2小時後,以45~55℃攪拌16小時,進行冷卻,而得到下述式(3)所示兩末端二氯直鏈狀聚二甲基矽氧烷1,548質量份。
ClMe2SiO(Me2SiO)19SiMe2Cl (3)(氯含有率為0.13mol/100g,25℃的動態黏度為25mm2/s)。
接著,將水350質量份置入於5L燒瓶中,並將上述式(3)所示兩末端二氯直鏈狀聚二甲基矽氧烷34.7質量份、三氯苯基矽烷58.9質量份、甲基乙烯基二氯矽烷6.4質量份及甲苯65.7質量份之混合液滴下。使燒瓶內液溫以25~40℃花費3~5小時進行滴下,之後將所得到的反應液以25~40℃攪拌60分鐘。由該混合液採取有機層,將該有機層洗淨至中性為止後進行共沸脫水,將不揮發分調整成50%。添加28質量%氨水0.3質量份於此中,並以25~40℃攪拌30分鐘後進行共沸脫水。之後,添加冰乙酸0.06質量份來使液性成為酸性,再度進行共沸脫水。
藉由將所得到的溶液供給於過濾、真空汽提,而得到下述式(4)所示無色透明之固體67.5質量份。
[(Me2SiO)21]0.57(PhSiO1.5)0.37(MeViSiO)0.06 (4)
摻雜合成例1的熱硬化性聚矽氧樹脂80質量份、合成例2為20質量份、氧化鈦為金紅石型R-45M(堺化學工業(股)製商品名,平均粒徑0.29μm)160質量份、熔融球狀矽石為MSR-4500TN((股)龍森製商品名,平均粒徑45μm)540質量份、觸媒1質量份、脫模劑為硬脂酸鈣1質量份,均勻混合後,藉由使用熱雙軸輥來進行混練而得到白色聚矽氧樹脂組成物。
以此聚矽氧樹脂組成物使用整面鍍銀的銅引線架,依下述成型條件進行轉印成型來製作圖1的矩陣型式凹型反射體(1)。
成型條件如下:成型溫度:170℃;成型壓力:70kg/cm2;成型時間:3分鐘
更以170℃進行2小時後固化。
摻雜合成例1的熱硬化性聚矽氧樹脂37質量份、三吖衍生物環氧樹脂(參(2,3-環氧丙基)異三聚氰酸酯(TEPIC-S:日產化學(股)製商品名,環氧當量100))28質量份、酸酐(不含碳碳雙鍵之酸酐:甲基六
氫鄰苯二甲酸酐(Rikacid MH:新日本理化(股)製商品名))35質量份、氧化鈦為金紅石型R-45M(堺化學工業(股)製商品名,平均粒徑0.29μm)160質量份、熔融球狀矽石為MSR-4500TN((股)龍森製商品名,平均粒徑45μm)540質量份、觸媒1質量份、脫模劑為硬脂酸鈣1質量份,均勻混合後,藉由使用熱雙軸輥來進行混練而得到白色聚矽氧樹脂組成物。
以此聚矽氧樹脂組成物使用整面鍍銀的銅引線架,依下述成型條件進行轉印成型來製作圖1的矩陣型式凹型反射體(2)。
成型條件如下:成型溫度:170℃;成型壓力:70kg/cm2;成型時間:3分鐘
更以170℃進行2小時後固化。
將藍色LED元件使用聚矽氧晶粒結合劑(商品名:LPS632D,信越化學工業(股)製)接著固定於引線架(其係露出於已成型的矩陣型式反射體之分別凹狀之底邊)上,使用金導線將另一方的引線部與元件電極電氣連接。之後,將如表1所示硬化物之硬度為相異的聚矽氧密封樹脂組成物分別注入於配置有LED元件的凹部開口部內,以120℃、1小時,更以150℃、1小時使硬化,來予以密封。
藉由切割將此矩陣型式反射體個別片化。
藉由切割來將個別片化的反射體之側面之厚度以成為100μm、200μm、300μm之方式予以裁切。雖然欲將反射體之側面之厚度裁切成40μm,惟,厚度過薄於切割時在側面產生龜裂,而無法製造40μm厚度之反射體。
又,為了比較,使用以往的聚鄰苯二甲醯胺(PPA)製造反射體,並使用側面之厚度為100μm之反射體來製造相同的發光裝置。
聚矽氧樹脂組成物之特性為以120℃、1小時,以150℃、1小時使硬化後,以室溫所測定。
如圖5所示般,將實施例、比較例製造的發光裝置20之底面使用接著劑21固定於基板22,藉由使用推拉力計(push pull gauge)將反射體之側面加壓來測定破壞強
度。加壓速度為以100μm/秒來測定。結果如表2所示。
使用以此等已個別片型的實施例1~7、比較例1~3所組裝的發光裝置,在25℃、80%的氣氛中放置48小時後,通過260℃的回焊爐3次。之後,調查反射體表面或元件表面與密封樹脂之接著不良。又,亦觀察回焊後的反射體表面之變色。
又,進行-40℃/30分鐘→100℃/30分鐘之熱擊(heat shock),來測定可靠性。結果如表2所示。
1‧‧‧反射體
2‧‧‧發光元件
3‧‧‧金導線
4‧‧‧保護發光元件之熱硬化性樹脂組成物
10‧‧‧金屬引線架
11‧‧‧第一引線
12‧‧‧第二引線
20‧‧‧發光裝置
21‧‧‧接著劑
22‧‧‧基板
[圖1]表示成型後的矩陣型反射體之一例之立體圖。
[圖2]表示將矩陣型反射體基板切割並個別片化之反射體之平面圖。
[圖3]沿著圖2之A-A線之剖面圖。
[圖4]沿著圖2之B-B線之剖面圖。
[圖5]說明測定發光裝置之破壞強度之方法之概略圖。
Claims (3)
- 一種表面安裝型發光裝置,其係具有:發光元件、將用來搭載發光元件的第一引線及與發光元件電氣連接的第二引線一體成型而成的反射體、將發光元件被覆的密封樹脂組成物之硬化物,其特徵為反射體為以熱硬化性樹脂組成物所成型,並形成具有底面與側面之凹部,凹部之側面之樹脂壁厚度為50~500μm,密封樹脂組成物為硬化物之硬度為蕭氏D型(shoreD)30以上的熱硬化性樹脂組成物。
- 如申請專利範圍第1項之表面安裝型發光裝置,其中,反射體係藉由將硬化性環氧樹脂組成物、聚矽氧樹脂組成物、或聚矽氧.環氧混成樹脂組成物成型所形成。
- 如申請專利範圍第1項之表面安裝型發光裝置,其中,密封樹脂組成物為硬化性聚矽氧樹脂組成物或聚矽氧.環氧混成樹脂組成物。
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-
2011
- 2011-07-29 JP JP2011166363A patent/JP5682497B2/ja active Active
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2012
- 2012-07-19 MY MYPI2012003283A patent/MY164773A/en unknown
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- 2012-07-26 EP EP12178090.2A patent/EP2551928B1/en active Active
- 2012-07-27 CN CN201210329937.4A patent/CN102903834B/zh active Active
- 2012-07-27 US US13/559,676 patent/US20130026522A1/en not_active Abandoned
- 2012-07-27 KR KR1020120082151A patent/KR101959568B1/ko active IP Right Grant
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JP2013030648A (ja) | 2013-02-07 |
US20130312906A1 (en) | 2013-11-28 |
JP5682497B2 (ja) | 2015-03-11 |
EP2551928A2 (en) | 2013-01-30 |
CN102903834B (zh) | 2016-12-07 |
US20130026522A1 (en) | 2013-01-31 |
EP2551928A3 (en) | 2014-08-27 |
CN102903834A (zh) | 2013-01-30 |
MY164773A (en) | 2018-01-30 |
EP2551928B1 (en) | 2018-08-22 |
KR101959568B1 (ko) | 2019-03-18 |
US8846420B2 (en) | 2014-09-30 |
TWI535064B (zh) | 2016-05-21 |
KR20130014401A (ko) | 2013-02-07 |
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