TW201318110A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

Info

Publication number
TW201318110A
TW201318110A TW101137659A TW101137659A TW201318110A TW 201318110 A TW201318110 A TW 201318110A TW 101137659 A TW101137659 A TW 101137659A TW 101137659 A TW101137659 A TW 101137659A TW 201318110 A TW201318110 A TW 201318110A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
conductivity type
high concentration
island
type high
Prior art date
Application number
TW101137659A
Other languages
English (en)
Chinese (zh)
Inventor
Fujio Masuoka
Hiroki Nakamura
Shintaro Arai
Original Assignee
Unisantis Elect Singapore Pte
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisantis Elect Singapore Pte filed Critical Unisantis Elect Singapore Pte
Publication of TW201318110A publication Critical patent/TW201318110A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW101137659A 2011-10-18 2012-10-12 半導體裝置 TW201318110A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/073885 WO2013057785A1 (ja) 2011-10-18 2011-10-18 半導体装置

Publications (1)

Publication Number Publication Date
TW201318110A true TW201318110A (zh) 2013-05-01

Family

ID=48140463

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101137659A TW201318110A (zh) 2011-10-18 2012-10-12 半導體裝置

Country Status (5)

Country Link
JP (1) JP5486735B2 (ko)
KR (1) KR20130099108A (ko)
CN (1) CN103250239A (ko)
TW (1) TW201318110A (ko)
WO (1) WO2013057785A1 (ko)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2662800B2 (ja) * 1987-09-07 1997-10-15 三菱電機株式会社 半導体記憶装置
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JP4373154B2 (ja) * 2003-07-18 2009-11-25 株式会社半導体エネルギー研究所 メモリ回路およびそのメモリ回路を有する表示装置、電子機器
JP5100035B2 (ja) * 2005-08-02 2012-12-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5158624B2 (ja) * 2006-08-10 2013-03-06 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP5114968B2 (ja) * 2007-02-20 2013-01-09 富士通セミコンダクター株式会社 半導体装置及びその製造方法
WO2009060934A1 (ja) * 2007-11-07 2009-05-14 Nec Corporation 半導体装置及びその製造方法
WO2009095998A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置
US8692317B2 (en) * 2008-04-16 2014-04-08 Nec Corporation Semiconductor storage device

Also Published As

Publication number Publication date
CN103250239A (zh) 2013-08-14
WO2013057785A1 (ja) 2013-04-25
JPWO2013057785A1 (ja) 2015-04-02
JP5486735B2 (ja) 2014-05-07
KR20130099108A (ko) 2013-09-05

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