JP5486735B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5486735B2
JP5486735B2 JP2013518033A JP2013518033A JP5486735B2 JP 5486735 B2 JP5486735 B2 JP 5486735B2 JP 2013518033 A JP2013518033 A JP 2013518033A JP 2013518033 A JP2013518033 A JP 2013518033A JP 5486735 B2 JP5486735 B2 JP 5486735B2
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JP
Japan
Prior art keywords
semiconductor layer
island
conductivity type
type high
concentration semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2013518033A
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English (en)
Japanese (ja)
Other versions
JPWO2013057785A1 (ja
Inventor
富士雄 舛岡
広記 中村
紳太郎 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisantis Electronics Singapore Pte Ltd
Original Assignee
Unisantis Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Unisantis Electronics Singapore Pte Ltd filed Critical Unisantis Electronics Singapore Pte Ltd
Application granted granted Critical
Publication of JP5486735B2 publication Critical patent/JP5486735B2/ja
Publication of JPWO2013057785A1 publication Critical patent/JPWO2013057785A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2013518033A 2011-10-18 2011-10-18 半導体装置 Active JP5486735B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2011/073885 WO2013057785A1 (ja) 2011-10-18 2011-10-18 半導体装置

Publications (2)

Publication Number Publication Date
JP5486735B2 true JP5486735B2 (ja) 2014-05-07
JPWO2013057785A1 JPWO2013057785A1 (ja) 2015-04-02

Family

ID=48140463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013518033A Active JP5486735B2 (ja) 2011-10-18 2011-10-18 半導体装置

Country Status (5)

Country Link
JP (1) JP5486735B2 (ko)
KR (1) KR20130099108A (ko)
CN (1) CN103250239A (ko)
TW (1) TW201318110A (ko)
WO (1) WO2013057785A1 (ko)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289293A (ja) * 1987-09-07 1990-03-29 Mitsubishi Electric Corp 半導体記憶装置
JPH0951042A (ja) * 1995-06-02 1997-02-18 Hitachi Ltd 半導体装置
JP2005038557A (ja) * 2003-07-18 2005-02-10 Semiconductor Energy Lab Co Ltd メモリ回路およびメモリ回路を有する表示装置
JP2007066493A (ja) * 2005-08-02 2007-03-15 Renesas Technology Corp 半導体記憶装置
JP2008065968A (ja) * 2006-08-10 2008-03-21 Renesas Technology Corp 半導体記憶装置
JP2008205168A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 半導体装置及びその製造方法
WO2009060934A1 (ja) * 2007-11-07 2009-05-14 Nec Corporation 半導体装置及びその製造方法
WO2009096465A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128450A1 (ja) * 2008-04-16 2009-10-22 日本電気株式会社 半導体記憶装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289293A (ja) * 1987-09-07 1990-03-29 Mitsubishi Electric Corp 半導体記憶装置
JPH0951042A (ja) * 1995-06-02 1997-02-18 Hitachi Ltd 半導体装置
JP2005038557A (ja) * 2003-07-18 2005-02-10 Semiconductor Energy Lab Co Ltd メモリ回路およびメモリ回路を有する表示装置
JP2007066493A (ja) * 2005-08-02 2007-03-15 Renesas Technology Corp 半導体記憶装置
JP2008065968A (ja) * 2006-08-10 2008-03-21 Renesas Technology Corp 半導体記憶装置
JP2008205168A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 半導体装置及びその製造方法
WO2009060934A1 (ja) * 2007-11-07 2009-05-14 Nec Corporation 半導体装置及びその製造方法
WO2009096465A1 (ja) * 2008-01-29 2009-08-06 Unisantis Electronics (Japan) Ltd. 半導体記憶装置

Also Published As

Publication number Publication date
TW201318110A (zh) 2013-05-01
CN103250239A (zh) 2013-08-14
KR20130099108A (ko) 2013-09-05
JPWO2013057785A1 (ja) 2015-04-02
WO2013057785A1 (ja) 2013-04-25

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