WO2009060934A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2009060934A1
WO2009060934A1 PCT/JP2008/070283 JP2008070283W WO2009060934A1 WO 2009060934 A1 WO2009060934 A1 WO 2009060934A1 JP 2008070283 W JP2008070283 W JP 2008070283W WO 2009060934 A1 WO2009060934 A1 WO 2009060934A1
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WO
WIPO (PCT)
Prior art keywords
source
drain
section
transistor
semiconductor device
Prior art date
Application number
PCT/JP2008/070283
Other languages
English (en)
French (fr)
Inventor
Kiyoshi Takeuchi
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009540095A priority Critical patent/JP5503971B2/ja
Publication of WO2009060934A1 publication Critical patent/WO2009060934A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)

Abstract

　複数のトランジスタを含むセルを複数備えた半導体装置であって、前記の各トランジスタは、基板上に設けられ当該基板の表面に対して垂直方向に電流が流れるチャネル部と、このチャネル部の下端側にあってソース及びドレインの一方となる下側ソース・ドレイン部と、前記チャネル部の上端側にあって前記ソース及びドレインの他方となる上側ソース・ドレイン部と、前記チャネル部上にゲート絶縁膜を介して設けられたゲート電極とを有し、前記上側ソース・ドレイン部は、当該トランジスタの上方に設けられた配線に接続され、前記下側ソース・ドレイン部は、当該トランジスタが含まれるセル内の他のトランジスタの下側ソース・ドレイン部に接続されている、半導体装置。
PCT/JP2008/070283 2007-11-07 2008-11-07 半導体装置及びその製造方法 WO2009060934A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009540095A JP5503971B2 (ja) 2007-11-07 2008-11-07 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007289933 2007-11-07
JP2007-289933 2007-11-07

Publications (1)

Publication Number Publication Date
WO2009060934A1 true WO2009060934A1 (ja) 2009-05-14

Family

ID=40625820

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070283 WO2009060934A1 (ja) 2007-11-07 2008-11-07 半導体装置及びその製造方法

Country Status (2)

Country Link
JP (1) JP5503971B2 (ja)
WO (1) WO2009060934A1 (ja)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128450A1 (ja) * 2008-04-16 2009-10-22 日本電気株式会社 半導体記憶装置
JP2010272874A (ja) * 2010-06-29 2010-12-02 Unisantis Electronics Japan Ltd 半導体記憶装置
CN101908544A (zh) * 2009-06-05 2010-12-08 日本优尼山帝斯电子株式会社 半导体器件
JP2010283351A (ja) * 2010-06-04 2010-12-16 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
WO2011043402A1 (ja) * 2009-10-06 2011-04-14 国立大学法人東北大学 半導体装置
WO2012098637A1 (ja) * 2011-01-18 2012-07-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
US8373235B2 (en) 2009-05-22 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor memory device and production method therefor
WO2013057785A1 (ja) * 2011-10-18 2013-04-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US8513717B2 (en) 2011-01-18 2013-08-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and method for manufacturing the same
US8558317B2 (en) 2009-08-11 2013-10-15 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US8581333B2 (en) 2008-04-16 2013-11-12 Renesas Electronics Corporation Semiconductor device and method for manufacturing the same
US8642426B2 (en) 2009-03-25 2014-02-04 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8754481B2 (en) 2011-10-18 2014-06-17 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
CN105023605A (zh) * 2014-04-18 2015-11-04 台湾积体电路制造股份有限公司 绝缘体上半导体（soi）衬底上的垂直全环栅（vgaa）器件的连接结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254752A (ja) * 1989-03-29 1990-10-15 Sony Corp 半導体メモリ
JPH0799311A (ja) * 1993-05-12 1995-04-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
US20010053089A1 (en) * 1998-02-24 2001-12-20 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
JP2008205168A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4064607B2 (ja) * 2000-09-08 2008-03-19 株式会社東芝 半導体メモリ装置
JP2006310651A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体装置の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254752A (ja) * 1989-03-29 1990-10-15 Sony Corp 半導体メモリ
JPH0799311A (ja) * 1993-05-12 1995-04-11 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH1079482A (ja) * 1996-08-09 1998-03-24 Rai Hai 超高密度集積回路
US20010053089A1 (en) * 1998-02-24 2001-12-20 Micron Technology, Inc. Circuits and methods for a static random access memory using vertical transistors
JP2008205168A (ja) * 2007-02-20 2008-09-04 Fujitsu Ltd 半導体装置及びその製造方法

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009128450A1 (ja) * 2008-04-16 2009-10-22 日本電気株式会社 半導体記憶装置
US8692317B2 (en) 2008-04-16 2014-04-08 Nec Corporation Semiconductor storage device
US8581333B2 (en) 2008-04-16 2013-11-12 Renesas Electronics Corporation Semiconductor device and method for manufacturing the same
US8642426B2 (en) 2009-03-25 2014-02-04 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method therefor
US8373235B2 (en) 2009-05-22 2013-02-12 Unisantis Electronics Singapore Pte Ltd. Semiconductor memory device and production method therefor
CN101908544A (zh) * 2009-06-05 2010-12-08 日本优尼山帝斯电子株式会社 半导体器件
JP2010283181A (ja) * 2009-06-05 2010-12-16 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
US8772881B2 (en) 2009-06-05 2014-07-08 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
US8558317B2 (en) 2009-08-11 2013-10-15 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US9484268B2 (en) 2009-08-11 2016-11-01 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
US9059309B2 (en) 2009-08-11 2015-06-16 Unisantis Electronics Singapore Pte Ltd. Semiconductor device and production method
WO2011043402A1 (ja) * 2009-10-06 2011-04-14 国立大学法人東北大学 半導体装置
JP2010283351A (ja) * 2010-06-04 2010-12-16 Unisantis Electronics Japan Ltd 半導体装置及びその製造方法
JP2010272874A (ja) * 2010-06-29 2010-12-02 Unisantis Electronics Japan Ltd 半導体記憶装置
US8513717B2 (en) 2011-01-18 2013-08-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and method for manufacturing the same
CN102714182A (zh) * 2011-01-18 2012-10-03 新加坡优尼山帝斯电子私人有限公司 半导体器件及其制造方法
WO2012098637A1 (ja) * 2011-01-18 2012-07-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置とその製造方法
CN103250239A (zh) * 2011-10-18 2013-08-14 新加坡优尼山帝斯电子私人有限公司 半导体器件
WO2013057785A1 (ja) * 2011-10-18 2013-04-25 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
JP5486735B2 (ja) * 2011-10-18 2014-05-07 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US8754481B2 (en) 2011-10-18 2014-06-17 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
CN105023605A (zh) * 2014-04-18 2015-11-04 台湾积体电路制造股份有限公司 绝缘体上半导体（soi）衬底上的垂直全环栅（vgaa）器件的连接结构

Also Published As

Publication number Publication date
JP5503971B2 (ja) 2014-05-28
JPWO2009060934A1 (ja) 2011-03-24

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