TW201202305A - Polyimide film, and laminate using the same and flexible thin film-based solar cell - Google Patents
Polyimide film, and laminate using the same and flexible thin film-based solar cell Download PDFInfo
- Publication number
- TW201202305A TW201202305A TW100107202A TW100107202A TW201202305A TW 201202305 A TW201202305 A TW 201202305A TW 100107202 A TW100107202 A TW 100107202A TW 100107202 A TW100107202 A TW 100107202A TW 201202305 A TW201202305 A TW 201202305A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- self
- acid
- polyimine
- film according
- Prior art date
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 title description 2
- 125000003118 aryl group Chemical group 0.000 claims abstract description 13
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims description 36
- -1 aromatic tetracarboxylic acid Chemical class 0.000 claims description 19
- 239000002243 precursor Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 claims description 12
- 150000001412 amines Chemical class 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 8
- 239000012298 atmosphere Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- 238000005496 tempering Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 229920000768 polyamine Polymers 0.000 claims description 3
- 150000008064 anhydrides Chemical class 0.000 claims description 2
- DVRDHUBQLOKMHZ-UHFFFAOYSA-N chalcopyrite Chemical compound [S-2].[S-2].[Fe+2].[Cu+2] DVRDHUBQLOKMHZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052951 chalcopyrite Inorganic materials 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 claims 1
- 229910021653 sulphate ion Inorganic materials 0.000 claims 1
- 150000004984 aromatic diamines Chemical class 0.000 abstract description 6
- 150000000000 tetracarboxylic acids Chemical class 0.000 abstract 1
- 239000010408 film Substances 0.000 description 77
- 230000000052 comparative effect Effects 0.000 description 23
- 238000000034 method Methods 0.000 description 17
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 15
- 239000007822 coupling agent Substances 0.000 description 14
- 150000002466 imines Chemical class 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 8
- 239000013585 weight reducing agent Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 6
- WKDNYTOXBCRNPV-UHFFFAOYSA-N bpda Chemical compound C1=C2C(=O)OC(=O)C2=CC(C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 WKDNYTOXBCRNPV-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 150000003949 imides Chemical class 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000012756 surface treatment agent Substances 0.000 description 5
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 4
- 239000002738 chelating agent Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 150000004985 diamines Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 108010026466 polyproline Proteins 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000006358 imidation reaction Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- 229910021603 Ruthenium iodide Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 210000004185 liver Anatomy 0.000 description 2
- UHGIMQLJWRAPLT-UHFFFAOYSA-N octadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCCCOP(O)(O)=O UHGIMQLJWRAPLT-UHFFFAOYSA-N 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 108010094020 polyglycine Proteins 0.000 description 2
- 229920000232 polyglycine polymer Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- LJZVDOUZSMHXJH-UHFFFAOYSA-K ruthenium(3+);triiodide Chemical compound [Ru+3].[I-].[I-].[I-] LJZVDOUZSMHXJH-UHFFFAOYSA-K 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 2
- TUNFSRHWOTWDNC-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000000052 vinegar Substances 0.000 description 2
- 235000021419 vinegar Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OXFSTTJBVAAALW-UHFFFAOYSA-N 1,3-dihydroimidazole-2-thione Chemical compound SC1=NC=CN1 OXFSTTJBVAAALW-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 1
- SMLNDVNTPWRZJH-UHFFFAOYSA-N 1-chloro-4-(trimethoxymethyl)dodecane Chemical compound ClCCCC(C(OC)(OC)OC)CCCCCCCC SMLNDVNTPWRZJH-UHFFFAOYSA-N 0.000 description 1
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 1
- RPOCBAFPCZKKCD-UHFFFAOYSA-N 1-octadecoxyicosane Chemical compound CCCCCCCCCCCCCCCCCCCCOCCCCCCCCCCCCCCCCCC RPOCBAFPCZKKCD-UHFFFAOYSA-N 0.000 description 1
- NOGFHTGYPKWWRX-UHFFFAOYSA-N 2,2,6,6-tetramethyloxan-4-one Chemical compound CC1(C)CC(=O)CC(C)(C)O1 NOGFHTGYPKWWRX-UHFFFAOYSA-N 0.000 description 1
- RLYCRLGLCUXUPO-UHFFFAOYSA-N 2,6-diaminotoluene Chemical compound CC1=C(N)C=CC=C1N RLYCRLGLCUXUPO-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- BQTJMKIHKULPCZ-UHFFFAOYSA-N 2H-indene Chemical compound C1=CC=CC2=CCC=C21 BQTJMKIHKULPCZ-UHFFFAOYSA-N 0.000 description 1
- LBIHNTAFJVHBLJ-UHFFFAOYSA-N 3-(triethoxymethyl)undec-1-ene Chemical compound C(=C)C(C(OCC)(OCC)OCC)CCCCCCCC LBIHNTAFJVHBLJ-UHFFFAOYSA-N 0.000 description 1
- PAHZZOIHRHCHTH-UHFFFAOYSA-N 3-[2-(2,3-dicarboxyphenyl)propan-2-yl]phthalic acid Chemical compound C=1C=CC(C(O)=O)=C(C(O)=O)C=1C(C)(C)C1=CC=CC(C(O)=O)=C1C(O)=O PAHZZOIHRHCHTH-UHFFFAOYSA-N 0.000 description 1
- UCQABCHSIIXVOY-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]phenoxy]aniline Chemical group NC1=CC=CC(OC=2C=CC(=CC=2)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 UCQABCHSIIXVOY-UHFFFAOYSA-N 0.000 description 1
- WCXGOVYROJJXHA-UHFFFAOYSA-N 3-[4-[4-(3-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(=CC=2)S(=O)(=O)C=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 WCXGOVYROJJXHA-UHFFFAOYSA-N 0.000 description 1
- SOMKOFZJHWCRCJ-UHFFFAOYSA-N 3h-benzimidazole-5-thiol Chemical compound SC1=CC=C2NC=NC2=C1 SOMKOFZJHWCRCJ-UHFFFAOYSA-N 0.000 description 1
- GNPSQUCXOBDIDY-UHFFFAOYSA-N 4-(trimethoxymethyl)dodecane Chemical compound C(CCCCCCC)C(C(OC)(OC)OC)CCC GNPSQUCXOBDIDY-UHFFFAOYSA-N 0.000 description 1
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 1
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 1
- UTDAGHZGKXPRQI-UHFFFAOYSA-N 4-[4-[4-(4-aminophenoxy)phenyl]sulfonylphenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=C(S(=O)(=O)C=2C=CC(OC=3C=CC(N)=CC=3)=CC=2)C=C1 UTDAGHZGKXPRQI-UHFFFAOYSA-N 0.000 description 1
- XDKUKGIJDNUFGK-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CN=C[N]1 XDKUKGIJDNUFGK-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- JAWZAONCXMJLFT-UHFFFAOYSA-N 4-propylpyridine Chemical compound CCCC1=CC=NC=C1 JAWZAONCXMJLFT-UHFFFAOYSA-N 0.000 description 1
- KGQJOPJSIZEIDD-UHFFFAOYSA-N 4-sulfanyl-1h-pyridine-2-thione Chemical compound SC1=CC=NC(S)=C1 KGQJOPJSIZEIDD-UHFFFAOYSA-N 0.000 description 1
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- 241000239290 Araneae Species 0.000 description 1
- 235000015763 Artemisia ludoviciana Nutrition 0.000 description 1
- 239000005711 Benzoic acid Substances 0.000 description 1
- JZHKIUBMQMDQRG-UHFFFAOYSA-N C(=C)C(C(OC)(OC)OC)CCCCCCCC Chemical compound C(=C)C(C(OC)(OC)OC)CCCCCCCC JZHKIUBMQMDQRG-UHFFFAOYSA-N 0.000 description 1
- OTHGAKQQCOZKHL-UHFFFAOYSA-N C1(=CC=CC=C1)NCCCC1(C(OCCC1)(OC)OC)OC Chemical compound C1(=CC=CC=C1)NCCCC1(C(OCCC1)(OC)OC)OC OTHGAKQQCOZKHL-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- TXFKKHCZPPZXBX-UHFFFAOYSA-N NCCCC(C)O[S+](OCC)OCC Chemical compound NCCCC(C)O[S+](OCC)OCC TXFKKHCZPPZXBX-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- PYMIEPAZZWWSJB-UHFFFAOYSA-N P(=O)([O-])([O-])[O-].C(CCCCCCC)[PH2+]CCCCCCCC.C(CCCCCCC)[PH2+]CCCCCCCC.C(CCCCCCC)[PH2+]CCCCCCCC Chemical compound P(=O)([O-])([O-])[O-].C(CCCCCCC)[PH2+]CCCCCCCC.C(CCCCCCC)[PH2+]CCCCCCCC.C(CCCCCCC)[PH2+]CCCCCCCC PYMIEPAZZWWSJB-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 241001494479 Pecora Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 229920000954 Polyglycolide Polymers 0.000 description 1
- 108010039918 Polylysine Proteins 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ONIBWKKTOPOVIA-UHFFFAOYSA-N Proline Natural products OC(=O)C1CCCN1 ONIBWKKTOPOVIA-UHFFFAOYSA-N 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 240000002982 Salvia apiana Species 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- HVWGGPRWKSHASF-UHFFFAOYSA-N Sulfuric acid, monooctadecyl ester Chemical compound CCCCCCCCCCCCCCCCCCOS(O)(=O)=O HVWGGPRWKSHASF-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- WPMWEFXCIYCJSA-UHFFFAOYSA-N Tetraethylene glycol monododecyl ether Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCO WPMWEFXCIYCJSA-UHFFFAOYSA-N 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical class OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 235000010233 benzoic acid Nutrition 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 210000001124 body fluid Anatomy 0.000 description 1
- 239000010839 body fluid Substances 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 238000013124 brewing process Methods 0.000 description 1
- YHASWHZGWUONAO-UHFFFAOYSA-N butanoyl butanoate Chemical compound CCCC(=O)OC(=O)CCC YHASWHZGWUONAO-UHFFFAOYSA-N 0.000 description 1
- BNMJSBUIDQYHIN-UHFFFAOYSA-N butyl dihydrogen phosphate Chemical class CCCCOP(O)(O)=O BNMJSBUIDQYHIN-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000011437 continuous method Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- BNTPLAQZFQLDRB-UHFFFAOYSA-N decyl hexyl hydrogen phosphate Chemical compound CCCCCCCCCCOP(O)(=O)OCCCCCC BNTPLAQZFQLDRB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- HTDKEJXHILZNPP-UHFFFAOYSA-N dioctyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OCCCCCCCC HTDKEJXHILZNPP-UHFFFAOYSA-N 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- TVACALAUIQMRDF-UHFFFAOYSA-N dodecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCOP(O)(O)=O TVACALAUIQMRDF-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002169 ethanolamines Chemical class 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- VGGRCVDNFAQIKO-UHFFFAOYSA-N formic anhydride Chemical compound O=COC=O VGGRCVDNFAQIKO-UHFFFAOYSA-N 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- ZUVCYFMOHFTGDM-UHFFFAOYSA-N hexadecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCCCOP(O)(O)=O ZUVCYFMOHFTGDM-UHFFFAOYSA-N 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 239000010954 inorganic particle Substances 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 125000003588 lysine group Chemical group [H]N([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])(N([H])[H])C(*)=O 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 125000001360 methionine group Chemical group N[C@@H](CCSC)C(=O)* 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- PKIYFBICNICNGJ-UHFFFAOYSA-N monooctyl phthalate Chemical compound CCCCCCCCOC(=O)C1=CC=CC=C1C(O)=O PKIYFBICNICNGJ-UHFFFAOYSA-N 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- YTVNOVQHSGMMOV-UHFFFAOYSA-N naphthalenetetracarboxylic dianhydride Chemical compound C1=CC(C(=O)OC2=O)=C3C2=CC=C2C(=O)OC(=O)C1=C32 YTVNOVQHSGMMOV-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- FRXLZEVXYFDHIM-UHFFFAOYSA-N phosphanium;hydrogen sulfate Chemical compound [PH4+].OS([O-])(=O)=O FRXLZEVXYFDHIM-UHFFFAOYSA-N 0.000 description 1
- CNTXYLCDFKRSRI-UHFFFAOYSA-N phosphoric acid;1-tridecoxytridecane Chemical compound OP(O)(O)=O.CCCCCCCCCCCCCOCCCCCCCCCCCCC CNTXYLCDFKRSRI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004633 polyglycolic acid Substances 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- WGYKZJWCGVVSQN-UHFFFAOYSA-N propylamine Chemical compound CCCN WGYKZJWCGVVSQN-UHFFFAOYSA-N 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 239000001397 quillaja saponaria molina bark Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 210000003296 saliva Anatomy 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229930182490 saponin Natural products 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- KRIXEEBVZRZHOS-UHFFFAOYSA-N tetradecyl dihydrogen phosphate Chemical compound CCCCCCCCCCCCCCOP(O)(O)=O KRIXEEBVZRZHOS-UHFFFAOYSA-N 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 235000012372 white sage Nutrition 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C41/00—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor
- B29C41/24—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of indefinite length
- B29C41/28—Shaping by coating a mould, core or other substrate, i.e. by depositing material and stripping-off the shaped article; Apparatus therefor for making articles of indefinite length by depositing flowable material on an endless belt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
- B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03926—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate
- H01L31/03928—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate comprising a flexible substrate including AIBIIICVI compound, e.g. CIS, CIGS deposited on metal or polymer foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29K—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES B29B, B29C OR B29D, RELATING TO MOULDING MATERIALS OR TO MATERIALS FOR MOULDS, REINFORCEMENTS, FILLERS OR PREFORMED PARTS, e.g. INSERTS
- B29K2079/00—Use of polymers having nitrogen, with or without oxygen or carbon only, in the main chain, not provided for in groups B29K2061/00 - B29K2077/00, as moulding material
- B29K2079/08—PI, i.e. polyimides or derivatives thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/514—Oriented
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/54—Yield strength; Tensile strength
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/732—Dimensional properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/12—Photovoltaic modules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Laminated Bodies (AREA)
- Moulding By Coating Moulds (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Photovoltaic Devices (AREA)
Description
201202305 六、發明說明: 【發明所屬之技術領域】 導體ίϊ ㈡=理並i 機金屬或半 ,,胺膜之疊層體及具有高變換效率之可撓性薄 【先前技術】 -功械、電、熱、化學特性高度調和的材料,就 性“子材料而言,主要_在電•電子產業或航*太* 2亞將其他無機金屬或半導體疊層ί 膜上並且在非0日料、或cis轉化合物轉體♦之可撓 =能電池、或可撓性TFT基板等的應财有 ㈣—般而言’聚合物的線膨脹係數(以下稱為「CTE」〉具有 =度=性’趨著溫度上升而增加。尤其,若超過玻璃轉移溫 子的運祕會增加,且—般而言cte會大幅上升。於聚醯 亞細膜’例如若絲5(rc〜2⑻。c的平均線膨脹係數為αι、於35〇 C〜450 C的平均線膨脹係數為α2,則α2/αι的値一般而言為約2。 相對於此,疊層於聚醯亞胺上的無機金屬或半導體的^ΤΕ約為 4〜16Ppm,於室溫至約5〇(rc的溫度區域幾乎無溫度依存性。亦 即’無機金屬或半導體的α2/α1的值約為1。因此,即使使得於室 溫至200Ϊ附近的聚醯亞胺的CTE與無機金屬或半導體的CTE相 同,於咼溫區域仍會發生CTE的不匹配,且有時會由於熱應力而 造成裂痕或翹曲等問題。 、專利文獻3中提出35(TC以下的CTE的變化減低的聚醯亞 胺。但是該聚醯亞胺膜於超過35(TC的高溫區域仍會有CTE大幅 上升’在更面溫域域的使用並不令人十分滿意。 又,於非專利文獻1提案由3,3’,4,4’ -聯苯四羧酸二酐(以下 也稱為「s-BPDA」)、苯均四酸二酐(以下稱為「PMDA」)、對苯 201202305 二了,為:的3成分系構成’且膜厚為9〜Ιίμιη的塗 揭示的㈣亞胺薄膜,也會在高溫區域 JCTE大巾田上升的情形,因此於高域的使用並不十分令人滿 【先前技術文獻】 【專利文獻】 【專利文獻1】日本特開2003_179238號公報 【專利文獻2】日本特開2〇〇7_317834號公報 【專利文獻3】日本特開2〇〇6_19974〇號公被 【專利文獻4】日本特開2〇1〇_1468號公報 【專利文獻5】日本特開2〇1〇_4〇29號公報 【專利文獻6】日本特開2〇1〇_4〇3〇號公報 【非專利文獻】 t #·##'] 1] Journal of Polymer Science : Part R ·
Physics,Vol.39,796-810(2001) y 【發明内容】 (發明欲解決之課題) 本發明之目的在於射^能耐受高溫之熱處理之尤斑益 金屬或半導體#層的雜亞賴及其製造方法。又^ g酿亞賴之疊層體及具有高效率的可触薄财:太陽能 (解決課題之方式) 本案發明人等努力研究化學組成或製造方法 胺膜之物性等並完成本發明。 狀條件、祕亞 亦即,本發明係關於以下事項。 (1)一種聚醯亞胺膜,係由芳香族四羧酸二酐與芳 其於聊〜就之平均線膨脹係數㈣為正値,且“g二 ~c之平均線_綱的
S 201202305 (2) -種如前述⑴之聚酿亞胺膜之製造方法,其具有以下步驟:將 併計s-BPDA與PMDA共含有85mol%以上之芳香族四羧酸二酐 以及含有PPD 85mol%以上的料族二胺混合使成為雜亞胺前 驅體;藉由將前述雜亞胺前雜抑部分醯亞胺化 支 持性膜;將前述自支持性膜於至少一方向延伸為1〇5倍以上、2 ,以下;將祕祕伸之辭㈣亞胺化;以及將前^亞胺化 後之膜進行回火處途。 (3) —種疊層體,係於前述(丨)之聚醯亞胺膜上具有導電層。 (4) -種可撓丨,薄膜系太陽能電池,係含有前述P)之疊層體。 (5) :種CIS系太陽能電池,係於前述⑶之疊上 化合物半導體層。 另只剿飧尔 (發明之效果) 或發日f i聚,亞胺膜嗜5〇°c〜2〇〇t:之平均線膨脹係數(α1) 。為正値,且於50C〜200t;之平均線膨脹係數(α1)與於35〇。〇〜45〇 係數(α2)的比值(α2/α1)為1.4以下。該聚醯亞胺膜 7二=與低溫區域之平均線雜係數之比值_ 近無機金屬或半導體之線膨脹係數的値。因此,於與 二,金屬或半導體疊料及之後之熱處理步驟時,可抑制發生^ 本Γ月之聚醯亞胺膜,尤適於利用於當做在其i造步 =上而要n溫處理的可撓性薄膜系太陽 陽能電池或可撓性TFT基板用基材。 L、疋CIS糸太 (a2/aH^f區域與低溫輯的平均線雜餘的比值 (οώ/αΐ)小的聚醯亞胺膜,是以往所無者。 【實施方式】 (實施發明之形態) [聚醯亞胺膜] ^ 5〇〇C~200〇C^^^«^ 35(ΤΓ〜且於5〇C〜2〇〇C之平均線膨脹係數(al)與於 c之平均線膨脹係數(a2)的比值為(a2/al)14以下。、 201202305 於50C〜20(TC之平均線膨脹係數(α1)通常以大於〇且為 16PPm/°C以。下較佳。,為約3〜16ppm/t更佳。 於350 C〜45(TC之平均線膨脹係數(α2)通常以_1〇 較 佳,約3〜16ppm/°C更佳。 於5〇。〇2〇〇。(:之平均線膨脹係數(α1)與於35〇<3c〜45(rc之平 均線膨脹係數〇2)的比值(α2/α1)通常為約私4較佳約_5 μ 4 更佳,約0.2〜1.4又更佳。 於分鐘熱處概的重量減少率以1質量%
St 下更佳°藉此’即使於高溫處,也能更理 想的使用。 又,於大氣中的5%熱重量減少溫度為600°C以上較佳。 準時祕赠的尺寸為基 乎乂狂於化25/〇以下更佳,約-0.15〜0.21%又更 佳。
如此的雜亞胺膜不特別限定,例如可將由含有s_BpDA PMDA之方香族四羧酸二酐及含有ppD 持性膜予以延伸並酸亞胺化而獲得。方香知-月女獲付的自支 度不特別限定,為約㈣ 12〜,更佳為約12〜125μιη,又更佳U D [聚醯亞胺膜之製造方法] ϋμΠ1 讀首先’使芳香族 酸)。其次,職嶋細; 性膜延伸並加熱、触胺化。支紐膜。其次將該自支持 [聚醯亞胺前驅體(聚醯胺酸)] 聚酿亞胺前驅體宜為由芳香族四紐二野 者,例如由含有PMDA之芳香族四 香私一胺製仏 與s-B舰之芳香族四缓酸二軒與含·^之^含有^MDA 較佳。 U之方香族二胺製造者 201202305 本發明中可使用的芳香族四羧酸二奸,宜含有pMDA斑 s-BPDA當做主成分。具體而言,就芳香族酸二酐而言,併g s-BPDA與PMDA宜含有共8加〇1%以上,又更佳為祝祕以j 尤佳為含有P廳A 5mol%以上且50mol%以下、s_BpDA 5〇m〇1% 以上且95m〇P/。以下,又更佳為含有PMDA5m〇1%以上且4〇m〇i% 以下、s_BPDA60mol%以上且95mol%以下時,於抑制於高溫區域 的CTE的減低及於尚溫的熱分解的觀點更佳。再者,在不損及本 發明特性之範圍,也可併用其他芳香族四竣酸二針成分。 本發明巾,可與上its—BPDA及PMDA個之料族四叛酸 ^酐成分,例如·· 2,3’,3,4,-聯苯四羧酸二酐、3,3,,4,4’_二苯基酮四 緩酉夂一酐、2,2,3,3 -一本基_四敌酸二gf、2,2-雙(3 4-二雜某笑其^ 丙烧二奸、2,2-雙(2,3-二羧基苯基)丙烷二肝、< !二酐、雙(2,3-二叛基苯基)趟二肝、2,3,6,7_蔡喊酸二針、μ,5^ 萘四羧酸二酐、1,2,5,6-萘四羧酸二酐、2,2_雙(3,4_二羧基苯 基)-1,1,1,3,3,3-六氟丙烷二酐、2,2-雙(2,3-二羧基苯基>1,1,1/33_ 六氟丙烷二酐等。 ’ ’ ’ ’ 本發明中可使用之芳香族二胺,宜含有ppD為主成分。更具 體而&,就务香族一胺而言,宜含有PPD 85mol%以上,更佳為含 有95mol%以上。再者,在不損及本發明特性之範圍,也可併用其 他二胺。能與PPD併用之芳香族二胺成分,例如:間苯二胺、2,4'_ 二胺基曱苯、2,6-二胺基甲苯、4,4’-二胺基二苯基曱烧、4,4,-二胺 基二苯醚、3,4’-二胺基二苯趟、3,3’-二曱基-4,4,-二胺基聯苯、2,2,- 二曱基_4,4’-二胺基聯苯、2,2,-雙(三氟曱基)_4,4,_二胺基聯苯、4,4,_ 一胺基一本基酮、3,3’-二胺基二苯基酮、4,4’-雙(4-胺基苯基)硫、 4,4 -一胺基·一本基項*、4,4’-二胺基苯甲酿苯胺、1,4_雙(4_胺基苯 氧基)苯、1,3-雙(4_胺基苯氧基)苯、ι,3-雙(3-胺基苯氧基)苯、4,4,_ 雙(4_胺基苯氧基)聯苯、4,4’-雙(3-胺基苯氧基)聯苯、2,2-雙(4·^基 苯氧基苯基)丙烷、雙[4-(4-胺基苯氧基)苯基]砜、雙[4_(3_胺基苯氧 基)苯基]砜、2,2-雙[4-(4-胺基苯氧基)苯基]六氟丙烷等。 聚醯亞胺前驅體之合成,可藉由於有機溶劑中,使大致等莫 201202305 =芳香細羧酸二酐與料族二胺進行 達成。又’也可預先合成其t之-成分過量的2 ί 8^。1%以二二t·,宜將併計S_BPDA與ΡΜ〇Α共較佳為含有 ρΪΓϋϊί # 醜二酐的芳香族四舰二肝,與含有 #χ佳為85mGl%以上之當做芳香族二胺的芳香族二 =驢亞胺前驅體。如此獲得的聚酸亞胺前驅體溶液,可:狀 去,或椒新的娜劑,而供之後 Ν,Ν·—乙基乙g!胺。該等有機溶劑可單獨制,也可併 用z種以上。 視需要也可加入醯亞胺化觸媒、有 聚醯亞胺前驅體溶液中, 機含鱗化合物、無機微粒等。 ,亞胺化卿,例如取代或非取代之含氮雜環化合物、該含 i雜ίί合物之n-氧化物化合物、取代或非取代之胺基酸化合 一八有羥基之芳香族烴化合物或芳香族雜環狀化合物,尤其L2-一:基咪唑、N-甲基咪唑、N-苄基-2-甲基咪唑、2-曱基咪唑、2-^ 土_4_甲基咪唑、5-曱基苯并咪唑等低級烷基咪唑、N_苄基_2_曱 基味唾等苯并料、異噎琳、3,5_二曱基吼唆、3,4_二曱基n比唆、 2,5-一、曱基吡啶、2,4_二曱基吡啶、4_正丙基吡啶等取代吡啶等。 醯亞,化觸媒之使用量相對於聚醯胺酸之醯胺酸單位,為約〇 〇1_2 1當量,尤其0.02-1倍當量較佳。藉由使用醯亞胺化觸媒,有時 «使自支持性膜的延伸變容易,或是對於抑制加熱醯亞胺化時之 化所致膜白化有效果。再者,獲得的聚醯亞胺膜的物性,尤 其是伸長率或撕裂強度有時會提高。 有機含磷化合物,例如單己醯基磷酸酯、單辛基填酸酯、單 月桂基磷酸酯、單肉豆蔻基磷酸酯、單鯨蠟基磷酸酯、單硬脂基 磷酸酯、三乙二醇單十三基醚之單磷酸酯、四乙二醇單月桂基醚
8 S 201202305 之單磷酉义酉曰、一乙一醇單硬脂基醚之 — 二辛基鱗_旨、二癸醯射_旨、二月桂基^旨、 磷酸醋、二鯨躐基磷_旨、二硬脂酸醋、四乙-醇單新基 二恤、三乙二醇單十湖之二她旨乙 或此 單丁 等磷酸t早硬脂_之二__旨等磷酸酯 ί ΐΐϊ ,如n甲胺 '單乙胺、單丙胺 胺、三丁胺、單乙醇胺、二乙醇胺、三乙^等。二乙私、三丙 無機微粒例如:微粒狀的二氧化鈦粉末、二 ί粉ί化之j化銘(―㈣粉末、氧化鋅粉末等無二: 碳化射粉末、氮化鈦粉轉無錄化物粉末、 又絲均—分散,可躺其本身公知的方法。 亞胺前驅體之步驟、及藉由將後述前述聚 驟r:胺化成自支持性膜的步驟以獨立的步 含在&明之形卩㈣前述2步驟—财續實施,當然也包 [自支持性膜] 、生白述翁的聚醯亞胺前驅體扣部分醯亞胺化,可製 t 純亞祕,可明賴㈣亞齡(酿亞胺 亞亞齡)、祕帛麵碰储化學酿 用熱醯亞胺化製造自支持性臈之方法。聚醯亞 、、办Γι二'合ϋ支持性膜,係將如上述_亞胺前驅體之有機 =洛液’或除此以外更含有醯亞胺化_、有機含触合物、 微粒等之《亞胺前雜溶敝成物麵_於支持體上, σ至成為自支持性的程度並進行部分醯亞胺化*製造。在此, 成為自支雜的錢,谢旨可從支持體獅的狀態。 t醯亞胺如驅體溶液’宜含有聚酸亞胺前驅體約1〇〜3〇質量 201202305 %。又,聚醯亞胺前驅體溶液,宜為醯亞胺化後之聚醯亞胺濃度為 約8〜25質量°/。者。 自支持性膜製造時之加熱溫度及加熱時間可適當決定,例如 可於溫度100〜18〇。(:加熱約3〜60分鐘。 支持體宜使用平滑的基材,例如不銹鋼基板、不銹鋼帶、玻 璃板等。 、、=支持性臈,其加熱減量為20〜50質量%之範圍,再者其加 熱減量為20〜50質量%之範圍且醯亞胺化率為8〜55%的範圍,更 佳為10〜50%的範圍時,自支持性膜的力學的性質充分,從進行延 伸的觀點為較佳。 又,上述自支持性膜之加熱減量,係從自支持性膜之質量W1 與硬化後膜之質量W2以次式求得之値。 加熱減量(%)=(W1 -W2)/W1 X1 〇〇 —又,上述經部分醯亞胺化的自支持性膜的醯亞胺化率,可測 ,自支持性臈與全硬化品的IR(ATR),並利用其振動帶峰部面積或 间度之比,计算醯亞胺化率。振動帶峰部,係利用醯亞胺羰基之 對稱伸縮振動帶或苯環骨架伸縮振動帶等。 本發明中,也可視需要在如此獲得的自支持性膜的單面或兩 面塗佈偶聯劑或螯合劑等表面處理劑的溶液。 /表面處理劑例如:矽烷偶聯劑、硼烷偶聯劑、鋁系偶聯劑、 鋁系螯合劑、鈦酸酯系偶聯劑、鐵偶聯劑、銅偶聯劑等各 劑或螯合劑等使接著性或密合性提高的處理劑。尤1,表面理 劑使用矽烷偶聯劑等偶聯劑時,可獲得優異的吋罢f _魏讓劑’例如:γ•環氧丙氧基魏、γ_ %<氧丙氧基丙基二乙氧基⑦烧、β_(3,4_環氧環己基)乙基 石夕烧等環氧基械系、乙絲三氯魏、乙縣參 J)梦烷、乙烯基三乙氧基矽烷、乙烯基三甲氧基矽烷等乙$基矽 烧糸、γ·甲基丙烯Si氧丙基三甲氧基魏等丙烯酸 ΐϊϊί 6基if基丙m基魏、叫齡乙基)卞胺基 丙基甲基二甲氧基魏,胺基丙基三乙氧基魏、 201202305 ,丙基三曱氧基矽烷等胺基矽烷系、γ_巯基丙基三甲氧基石夕烷、丫_ 氯丙基三甲氧基矽烷等。又,鈦酸酯系偶聯劑,例如:異丙基三 異硬,醯基鈦酸酯、異丙基十三基苯績醯基鈦酸酯、異丙基參(二 辛基氳磷酸酯)鈦酸酯、四異丙基雙(二辛基亞磷酸酯)鈦酸酯、四 (2,2-^烯丙基氧曱基_1_ 丁基)雙(二_十三基)亞磷酸醋鈦酸酯、雙(二 辛基氫磷酸,)氧乙酸酯鈦酸酯、雙(二辛基氫磷酸酯)乙烯鈦酸 酯、異丙基三辛醯基鈦酸酯、異丙基三異丙苯基苯基鈦酸酯等。 偶聯劑,以矽烷系偶聯劑,尤其尸胺基丙基-三乙氧基石夕烷、
Nf(胺基乙基)个胺基丙基_三乙氧基矽烷、Ν_(胺基羰基)个胺基丙 基:乙氧基石夕烧、Ν-[β-(苯胺基)_乙基]个胺基丙基三乙氧基矽烧、 Ν-,基个胺基丙基三乙氧基石夕烷、队苯基个胺基丙基三曱氧基石夕 烷等胺基矽烷偶聯劑為佳,其中又以Ν_苯基_γ•胺基丙基三甲氧基 發烧較佳。 & 一偶聯劑或螯合劑等表面處理劑的溶液的溶劑,例如與聚酿亞 ^前驅體溶液之前述有機溶劑(於自支持性膜中含有的溶劑)相同 者。有機溶劑宜為與聚醯亞胺前驅體溶液互溶之溶劑較佳,與聚 酸亞胺前驅體溶液之有機溶謝目同者較佳^有機溶劑 以上之混合物。 々 ,聯劑合鮮表面處_的有機溶劑溶液,其表面處理 Ϊ量宜為°·5質量%以上,更佳為1〜勘質量%,尤佳為3〜60 下圭ίf量%。又,水分的含量宜為2G質量%以 有機i 町,尤佳為5 ϊ4%町。表面處理劑之 容25^賴紐計測定之 表,處理劑之有機溶継液,尤其以表面處理縣。,$質量% ,尤佳為1〜6〇質量%,更佳為3〜%質量%的濃度均勺、、容解# 酿胺系溶劑之低黏度(尤其旋讎度0.8〜·厘二者度^广解於 更佳理冑1f液讀佈量可適纽定,例如絲1〜5〇咖2, 可兩ίίΐ咖’又更佳為3〜2()咖2。塗佈量,可為兩面相同也 11 201202305 表面處理劑;谷液之塗佈可使用公知方法,例如:照相凹版塗 ^法、疑塗法、篩網印刷法、浸塗法、喷塗法、棒塗法、刀涂法、 輥塗法、刮刀塗佈法、模塗法等公知塗佈方法。 土 ,次朗化學醯亞胺化製造自支持性膜之方法。化學酿 公知方法進行。例如,與熱酿亞胺化的情形同樣合 ΐϊί,驅體’並製備係聚醯亞胺前驅體溶液的聚醯胺酸溶 ㈣二加人脱水劑及綱。視f要也可將於如_亞胺化中 :、2ί粒等加人聚醯胺酸溶液。虹,將該溶液流延塗佈 埶i备f 如金屬帶等)上而形成膜狀物,並將該膜狀物利用 ί @在2W^X下的奴,較佳為40〜勘。〇 。皿度加熱直到成為自己支持性的程度,藉此製造自支持性膜。 =水_如:有機酸_如脂賊酸酐 脂 來m:、丙酸針、丁酸酐' 甲酸酐、琥轴酸酐、馬 李六隹-r ΐί—甲_、苯甲香酸酐"比讀酸酐等,以乙酸針 =結中之芳香族聚峨的醯胺 雜環級胺、 甲胺、三乙胺、二甲基苯 聚醯胺酸之醯胺酸鍵結!莫耳,為01莫耳才以= 圭液中之芳香族 在進情熱酿亞胺化的情形同樣,可視需要 養合劑等表面處^之=支持性膜的單面或兩面塗佈偶聯劑或 [自支持性膜之延伸] 物性=通=伸倍率可適當決定使獲得目的 …倍。,,延伸倍率i指將臈^代更^圭^倍 订延伸。糟由延伸,能使於高溫區域與低溫區域的平均線膨^
S 12 201202305 為小,延伸倍率等延伸條件係從實用上的 脹係數(αι)與於350〇c〜45()。 之f均線膨 ,可為i以下。 千均線月,脹係數㈣的比值 幅機具件支之,針板拉 率’通常為—範圍延伸。= [醯亞胺化] 將上述獲得的延伸物藉由加熱予以醯 =^熱^細_〜5,溫度,進行聚合==匕 ΪΓί ϊΐι除ί約_〜5小時,尤佳為緩慢進行約α〇5〜3小 時為適虽。尤其,該加熱處理以階段性於約卿 ;,5〜30分鐘第一次加熱處理,再於17〇〜22〇。=^ 0 5 ^ 加驗,又再請y溫進行第四次 聚醯亞胺膜之製造可细批式法鱗續法進❼ =延伸,可利用延伸專用的加熱爐進行,也可於加轨、$ ^力空 前半步驟(例如上述第一次加熱處理的階段)進 仃。使用醯亞胺化用的加熱爐時,係以針板拉幅機 = 向的兩端緣並延伸。於此情形亦如上述,延 軸延伸、逐次雙槪伸朗時雙軸延伸財任—的^法。早 [回火處理] / 本發=,為將得到的聚酿亞胺膜進行回火處理。 輕。具體的回火處理的方法,宜為對於:亞 13 201202305 施加^力的狀態’於40(TC以上,較佳於5〇(rc以上進行加熱處理。 只質上未施加應力的狀態,係指未施加外力(張力)的狀態。例 如,聚醯亞胺膜的單端或兩端未受固定的狀態。又,也可使用視 膜的尺寸變化適當擴縮固定端的方法。 該熱處理可連續進行如上説明過的用於醯亞胺化的第四次加 熱處,,也可在第四次加熱處理㈣段使成為實壯描加應力 的狀態而進行加熱處理。可祕亞胺化後獲得的聚醯亞胺膜冷卻 後,再度加熱(再加熱)。又,熱處理後的冷卻也宜於實質上不施 應力的狀態進行。 該熱處理之溫度為400。(:以上,較佳為50(rc以上,更佳於 500°C以上且550t以下,尤佳為50(rc以上且52(rc以下。關於熱 處理的時間,進行5秒〜10分鐘,較佳為30秒〜1〇分鐘,又更佳、 ,1 5刀鐘較佳。回火處理的加熱源,例如熱風或遠紅外線等。 藉由如此的回火處理,可減低由於殘留應力所致在玻璃轉移溫度 以i的^溫區域的熱收縮,獲得實質上在至多45〇°c的升溫過程及 降溫過。程係為可逆膨張、收縮的聚醯亞胺膜。藉此,能獲得例如 在500 c以上的兩溫熱處理中的尺寸變化率,尤其降溫時的膜收 小的聚醯亞胺膜。 、、 =連續法製造聚醯亞胺膜時,實際上以膜兩端未固定的狀態 於50fC以上運送時,有時會於膜安定生產方面造成障礙。於此& 形’藉由將岐1¾端的針板拉幅機或炎子的寬度配合膜而縮小, 能成為實質上幾乎未施加應力的狀態。 如此’可獲得如上述本發明之聚醯亞胺膜。 么、,本發明之聚醯亞胺膜,在超過玻璃轉移溫度的溫度區域,cTE 幾上升。又,藉由提高延伸倍率,可使高溫區域的CTE比起 ,溫區域#CTE更小,而且藉由提高延伸倍率,能麟於高溫區 :表現負的CTE的聚醯亞胺。本發明之聚醯亞胺膜,於高溫區域 與低溫區域的平均線膨脹係數的比值(α2/α1)比起以往為小,顯示 接近無機金屬或半導體之線膨脹係數的値。因此,可抑制與無機 金屬或半導體疊層時及之後的減理步驟巾她曲或裂痕。又,
14 S 201202305 ,情形’使高溫區域之CTE比起低溫區域的CTE更小,能使直到 问/皿區域的整體尺寸變化率減小,可使疊層體於高溫處理步驟的 整體熱應力減低。 [疊層體及CIS系太陽能電池] 在本鲞明之聚醯亞胺膜上利用公知方法形成導電層可獲得疊 層體。在此導電層係指傳導電流之層體,具體而言,為金屬、金 屬氧化物、、有機導電體等。導電層為鉬層時,由耐熱性、耐藥品 性、熱傳導性、加工性、經濟性等的觀點為較佳。 本發明之聚醯亞胺膜,於50(rc的重量減少率亦小,能於更高 溫度區域仙,翻於製造步驟上f要高溫減理的4層體及使 用其之可撓性TFT基板或可撓性太陽能電池。尤其,適用於在本 發明之疊層體上形成有黃銅礦系化合物半導體層之CIS系太陽能 =二也。、本發巧之CIS系太陽能電池,例如可依照w〇2〇〇9/142248 等5己載之方法製造。能於形成缺陷少的高品質CIS系半導體薄膜 =必要的50(TC以上的高溫進行熱處理,因此依照本發明,造 咼變換效率的高品質CIS系太陽能電池。 (實施例) 以下依照實施例對於本發明更詳細説明,但本發明不限於此 #實施例。 、 聚醯亞胺膜之物性評價方法如下。 (1) 自支持性膜之加熱減量測定法 將自支持性膜於480¾以烤箱加熱5分鐘。以原始重量定為 、加熱後的重量定為W2,依照下式(1)計算加熱減量。 加熱減量(%)=(Wl - W2)/W1 X100 (1) (2) 自支持性膜之醯亞胺化率測定方法 使用^C0公司製FT/IR-4100,使用ZnSe測定ATR-IR。使用 =曰772cn^附近的峰部的最大値當做χι、附近的峰部 二#做幻時之自支躲蘭_比X1/X2,及完全進行醯 =的^的面積比χι/χ2 ’依照下式(2)計算自支持性膜之酿亞 、—亞私化率之測定,係測定膜兩面,並以兩面的平均當 15 201202305 做$亞胺⑽。完全進行齡胺化的膜,係使用將自支持 480 C加熱5分鐘過者。膜係以經流延的支持體側當成a面,氣^ 側當成B面。 礼體 醢亞胺化率(%)=(al/a2+bl/b2)x50 (2) 惟,於式(2),以 1772cm 1附近的峰部的最大値為XI, 1517cm_1附近的峰部的最大値為X2、 自支持性膜的A面側的面積比χι/χ2為al, 自支持性膜的B面側的面積比X1/X2為bl, =交進,醯亞胺化的膜的A面侧的面積比X1/X2為a2, 凡全進行醯亞胺化的膜的B面侧的面積比X1/X2為b2。 ⑶聚f亞胺膜的平均線膨脹係數及50CTC加熱後的熱收縮率 針對測定對象的聚醯亞胺膜,利用tma =;於,〜靴及赋〜靴的尺寸變化,均= 服係數(XI及α2,並計算平均線膨脹係數的比值_卜 ^且’也測定於降溫過程的尺寸變化,確認於45〇t以下實質 升&過程的尺寸變化,已除去殘留應力。 25以尺寸與起初的尺寸,求出於 : SnteChn〇1〇gy 公司製 TMA/S S6100 测疋模式:拉伸模式、負荷2g、 試樣長度:15mm、 試樣寬度:4_、 升溫開始溫度:25。(:、 升溫結束溫度:500。〇、 降溫結束溫度:25°C、 升溫及降溫速度·· 2〇t:/mm、 测定氣體氛圍:大氣。 (4)聚f Ϊ於5〇〇°C經過20分鐘熱處理後之重量減少率 使用島津製作所製TGA-5〇,針對測宏料金f f咸^羊 訂賴讀象的親亞胺膜,從
S 16 201202305 室溫以50°C/分升溫至50(TC ’並於到達500°C的時點測定聚酿亞 胺膜的重量WG。並且,於此狀態在5〇〇。(:保持20分鐘後,測定 聚醯亞胺膜的重量W,從下式求取重量減少率。 重量減少率(%) = - W)/W〇 X100 (5)熱重里为析(聚酿亞胺膜之5%重量減少溫度) 使用島津製作所製TGA-50,將測定對象的聚酿亞胺臈在大氣 中,以KTC/min升溫至60(TC。並且,從獲得的熱重量減少曲線、, 求取5%重量減少溫度(Td5)。又,當6〇(rc的重量減少率為抓以 下時,以Td5>600t:表示。 [參考例1] (聚醯胺酸溶液之製備) 、於500ml的可分離燒瓶中.,放入N,N-二甲基乙醯胺273 3g, 並於其中投入對苯二胺(PPD)16.532g(〇 1529莫耳)並攪拌。再投入 苯均四酸广酐(PMDA)4.335g(〇〇199莫耳),於常溫常壓中使反應i :J、時。接著’气:入3,3,,4,4’_聯苯四敌酸二酐(s_BpDA)39· i 33雜j 3GC,聚合反應1C)小時’獲得聚酿胺酸溶液(聚醯亞胺 心液)。獲得的聚酿胺酸溶液於3〇〇C的旋轉黏度為25⑻泊。 瀵合使用的各原料的莫耳比如表丨所示。 [實施例1] (聚醯亞胺臈之製造) 旦々、考例1獲得的聚酿胺酸溶液’以相對於聚醯胺酸100質 質量份的比例添加單硬脂基磷酸酯三乙醇胺鹽,均 二聚醯麟溶液組成物。觸«麟溶餘成物流延 加熱2·5—,之麟13沈祕2.5分鐘後, @自#拉=#又侍部分醯亞胺化聚醯胺酸自支持性膜(生膜)。獲得 的自念持性,的醯亞胺化率為18.5%,加熱減量為π質量%。 贼的持;方向的兩端,在氣體氛圍溫度 將膜四角的端部以向:τ20秒鐘延伸L〇5倍,延伸結束後, 分鐘,卿針握持’並於i5〇〇c〜_°c加熱、醯亞胺化16 X于、予、、、勺35μιη的聚醯亞胺膜。接著,將握持四角的針除 17 201202305 ^门而實質上未施加應力的狀態,於wc將聚酿亞胺跑也占 [實施例2〜6] 十對獲付的聚醯亞胺膜的測定結果如表 族二同樣程序,使用以表1所示比例(莫耳之芳香 ΐ :寻==與實施例1進行同樣操作,獲 ^針對獲付的聚酿亞胺膜的測定結果如表2所示。 蛛 [貫施例7] 族酸同樣^序’於以表1所示比例(莫耳比)之芳香 酸1〇〇質量份為聚酿胺酸溶液中,以相對於聚酿胺 Bi 為〇.24質置伤的比例添加單硬脂基碟酸酉旨三乙酿脫 皿二句勻沘σ獲得聚醯胺酸溶液組成物。將獲得聚 的狹縫,連續的流延縣鑄乾燥爐的平ί ^ ί ΐΐίΓ上後,於125t(設定溫度)乾燥8分鐘:: $狀的自支持性臈。醯亞胺化率為14·2%,加熱減量為4〇 ^ 將該自支持性膜沿行進方向⑽^),於氣體氛圍溫 最後於至乡峨加熱5分鐘,麟賴_'。==爐 的寬方向的兩端麟部實質上不施加應力的狀態ί 應力狀心),於500 C將聚醯亞胺膜加熱處理2.5分鐘。 聚酿亞胺蘭攸絲如表2解。 的 [實施例8] 對於與參考例1以同樣程序以表1所示比例(莫耳比)使用芳香 族酸讀及芳麵二胺而麟㈣醯舰魏巾,_對於聚酿 胺酸100質量份為0.24質量份的比例添加單硬脂基鱗酸醋^乙醇 胺鹽,再以相對於聚醯胺酸的醯胺酸單位添加〇 〇5當量的丨,2-二 甲基味唾(醢亞胺化觸媒),均勻混合獲得聚酿胺酸溶成物’。並 且,將麟乾燥爐的溫度定為丨筑,除此以外與實施例7同樣進
18 S 201202305 行,獲得長尺狀的自支持性膜。加熱減量為39 9質量%。 件、寺性Γ,將行進方向師)的延伸倍率定為1.07 ’獲得雜亞賴。將如此獲得的_亞胺ΐ,於另一加 於進熱處理2分鐘°此加熱處理時,«亞胺 ^方向,均係祕持兩端的實質上未施加應力的 倍率定為U1倍’除此以外與實施例7同 狀態。針對獲得的聚醯亞胺膜的測定結果如表2。 [比較例1〜7] 使用與參考例i以同樣程序,使耻丨所示比例(莫耳 香私酸一酐及芳香族二胺獲得的聚醯胺酸溶液,以表丨所示延 倍率進行延伸,除此以外與實施例丨進行同樣操作,獲得聚酿亞 比較例5〜7 ’未進行延伸(延伸倍率υ。獲得的聚酿亞 私膜的測定結果如表2。 於不含PMDA時’即使將自支持性膜延伸,於高溫區域的CTE 也不會相對下降’ α2/α1的比値超過1.4。又,於含有ΡΜ〇Α的情 形’亦為若不進行延伸’則於高溫區域的CTE不會相對下降,α2/〇^ 的比値超過1.4。 [比較例8及9] 測定市售品的聚酿亞胺膜的物性。聚醢亞胺膜使用:註 冊商標)(Kaneka製’ NPI)[比較例8]與Kapton(註冊商標)(東麗枉邦 (股)公司製,EN-C)[比較例9]。其結果如表2。αΐ與α2表示片狀 的聚醯亞胺膜的橫方向與縱方向的數値兩者。 【表1】 酸二酐 二胺 膜厚 方向 延伸倍率 s-BPDA PMDA PPD (m) (倍) 實施例1 87 13 100 35 延伸方向 1.05 實施例2 87 13 100 35 延伸方向 1.1 實施例3 87 13 100 35 延伸方向 1.15 201202305 實施例4 63 37 100 35 延伸方向 1.05 實施例5 63 37 100 35 延伸方向 1.1 實施例6 50 50 100 35 延伸方向 1.1 實施例7 50 50 100 35 MD 1.1 TD 1.06 實施例8 95 5 100 35 MD 1.07 TD 1.11 比較例1 100 0 100 35 延伸方向 1 比較例2 100 0 100 35 延伸方向 1.05 比較例3 100 0 100 35 延伸方向 1.1 比較例4 100 0 100 35 延伸方向 1.15 比較例5 87 13 100 35 延伸方向 1 比較例6 63 37 100 35 延伸方向 1 比較例7 50 50 100 35 延伸方向 1 比較例8 - - - MD - TD - 比較例9 - - - MD - TD - 【表2】 αΐ α2 α2/α1 重量減少率 (%) Td5 (°C) 熱收縮率 (%) 實施例1 11.70 15.60 1.33 0.209 >600 0.13 實施例2 7.89 7.10 0.90 Τ >600 0.13 20 s 201202305 實施例3 1.47 -8.15 -5.54 T >600 0.12 實施例4 13.60 19.00 1.40 0.484 >600 0.18 實施例5 8.78 3.36 0.38 T >600 - 實施例6 2.79 0.65 0.23 0.497 >600 0.21 實施例7 3.80 2.17 0.57 t >600 8.26 8.90 1.08 - 實施例8 10.4 12.1 1.16 - >600 -0.15 6.60 1.70 0.26 0.02 比較例1 18.70 36.10 1.93 0.213 >600 0.12 比較例2 12.20 33.90 2.78 T >600 - 比叙例3 9.43 22.50 2.39 T >600 - 比較例4 0.18 9.02 50.11 T >600 - 比較例5 22.50 50.00 2.22 0.209 >600 - 比較例6 24.50 52.00 2.12 0.484 >600 - 比較例7 18.30 40.10 2.19 0.497 >600 - 比較例8 18 28.6 1.59 1.23 - - 16.1 23.9 1.48 - 比較例9 10.9 17.3 1.59 0.883 - - 7.59 11.7 1.54 【圖式簡單說明】 益。【主要元件符號說明】 飯〇 21
Claims (1)
- 201202305 七、申請專利範圍: 於50。(:〜20CTC的平均杯’句線膨脹係數㈣為正値,且 35〇〇C-5〇〇C 5%熱3重奴恤麵,其於大氣中的 4.如申請專利範圍第} i 3項中 為專利範圍第1至5項中任一項之瓣胺膜,其厚度 7二如申明專利範圍第i至6項中任一項之聚醯亞胺膜,其中該 四$酸二酐’含有併計3,3,,4,4,-聯苯四羧酸二酐(5_卿八) 8w,該綱:胺含有對苯 造方下 =第1至7項中任-項之聚_膜之製 混合併計s-BPDA與PMDA共含85111〇1%以上之芳香族四 酸二針以及含PPD85mGl%以上崎香族二紐成絲醯亞胺前 驅體; 將該聚醯亞胺刖驅體予以部分酿亞胺化,使成自支持性膜. 使自支持性膜至少於一方向延伸1.05倍以上且2倍以下:’ 將該經延伸的膜進行醯亞胺化; ’ 將該醯亞胺化後的膜進行回火處理。 9·如申請專利範圍第'8項之聚醯亞胺膜之製造方法,其中該芳 22 S 201202305 香族四緩酸二酐含有PMDA 5mol%以上且50mol%以下、s-BPDA 50mol%以上且95m〇p/〇以下。 10.如申請專利範圍第9項之聚醯亞胺膜之製造方法,其中該 自支持性膜之酿亞胺化率為10〜50%。 、11.如申請專利範圍第8至1〇項中任一項之聚醯亞胺膜之製造 方法,其中延伸該自支持性膜時的溫度為100。(:〜280°C的範圍内。 、12.如申請專利範圍第8至u項中任一項之聚醯亞胺膜之製造 方法,其中該回火處理,係於對於醯亞胺化後的聚醯亞胺膜實質 上幾乎未施巧應力的狀態,於40(rc以上進行加熱處理的步驟。 13.—種豐層體’其係於如申請專利範圍第1至7項中任一 之聚醯亞胺膜上具有導電層。 、 、 如申請專利範圍第I3項之疊層體,其中該導電層為銷層。 15.-種可撓性薄麻太陽能電池,係含有如巾請 13或14項之疊層體。 现固弟 16.—種CIS系太陽能電池,其係於如申請專利範圍 14項之豐層體上具有黃銅鑛系化合物半導體層。 、圖式· 〇 23
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010046145A JP2013100379A (ja) | 2010-03-03 | 2010-03-03 | ポリイミドフィルム及びそれを用いた積層体、並びにフレキシブル薄膜系太陽電池 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201202305A true TW201202305A (en) | 2012-01-16 |
Family
ID=44542192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100107202A TW201202305A (en) | 2010-03-03 | 2011-03-03 | Polyimide film, and laminate using the same and flexible thin film-based solar cell |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2013100379A (zh) |
TW (1) | TW201202305A (zh) |
WO (1) | WO2011108542A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI580712B (zh) * | 2012-06-08 | 2017-05-01 | 東麗 杜邦股份有限公司 | 聚亞醯胺膜 |
US10076029B2 (en) | 2014-02-28 | 2018-09-11 | Ajinomoto Co., Inc. | Method for producing printed wiring board |
CN110494475A (zh) * | 2017-09-04 | 2019-11-22 | 株式会社Lg化学 | 用于柔性显示装置基底的聚酰亚胺膜 |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101646283B1 (ko) * | 2011-12-27 | 2016-08-08 | 코오롱인더스트리 주식회사 | 폴리아믹산 용액 |
JP6539965B2 (ja) * | 2014-09-16 | 2019-07-10 | 宇部興産株式会社 | フレキシブルデバイスの製造方法 |
JP2016102147A (ja) * | 2014-11-27 | 2016-06-02 | Jxエネルギー株式会社 | ポリイミドフィルム、それを用いた基板、及び、ポリイミドフィルムの製造方法 |
KR20170038175A (ko) * | 2015-09-29 | 2017-04-06 | 신닛테츠 수미킨 가가쿠 가부시키가이샤 | 폴리이미드 필름의 제조 방법 |
KR20170115339A (ko) * | 2016-04-07 | 2017-10-17 | 주식회사 엘지화학 | 내열성이 개선된 폴리이미드 필름 및 그 제조방법 |
JP7072140B2 (ja) * | 2017-05-31 | 2022-05-20 | Ube株式会社 | ポリイミドフィルム |
CN107482073A (zh) * | 2017-07-19 | 2017-12-15 | 旭科新能源股份有限公司 | 一种铜铟镓硒柔性薄膜电池的钼层制备方法 |
JP6443579B2 (ja) * | 2018-09-28 | 2018-12-26 | 宇部興産株式会社 | ポリイミドフィルム |
JP7320254B2 (ja) * | 2019-08-21 | 2023-08-03 | 河村産業株式会社 | 面状発熱体 |
KR102248979B1 (ko) * | 2019-09-11 | 2021-05-07 | 피아이첨단소재 주식회사 | 다층 폴리이미드 필름 및 이의 제조방법 |
WO2023096340A1 (ko) * | 2021-11-24 | 2023-06-01 | 피아이첨단소재 주식회사 | 다층 구조의 폴리이미드 필름 및 이의 제조방법 |
TWI836750B (zh) * | 2021-11-29 | 2024-03-21 | 南韓商聚酰亞胺先端材料有限公司 | 多層聚醯亞胺膜、包含其的可撓性覆金屬箔層壓板及電子部件 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3346228B2 (ja) * | 1997-07-11 | 2002-11-18 | 宇部興産株式会社 | 芳香族ポリイミドフィルム、積層体および太陽電池 |
JP5374817B2 (ja) * | 2005-11-16 | 2013-12-25 | 東レ・デュポン株式会社 | ポリイミドフィルムおよびその製造方法 |
JP2007194603A (ja) * | 2005-12-19 | 2007-08-02 | Du Pont Toray Co Ltd | フレキシブルプリント配線板およびその製造方法 |
JP2008248067A (ja) * | 2007-03-30 | 2008-10-16 | Du Pont Toray Co Ltd | ポリイミドフィルムおよびフレキシブル回路基板 |
JP5131519B2 (ja) * | 2007-07-11 | 2013-01-30 | 東レ・デュポン株式会社 | カバーレイ |
TWI480311B (zh) * | 2008-05-20 | 2015-04-11 | Ube Industries | 芳香族聚醯亞胺膜、疊層體及太陽電池 |
JP5481929B2 (ja) * | 2008-05-20 | 2014-04-23 | 宇部興産株式会社 | ポリイミド金属積層体および太陽電池 |
JP5515414B2 (ja) * | 2008-05-20 | 2014-06-11 | 宇部興産株式会社 | ポリイミド金属積層体および太陽電池 |
-
2010
- 2010-03-03 JP JP2010046145A patent/JP2013100379A/ja active Pending
-
2011
- 2011-03-01 WO PCT/JP2011/054634 patent/WO2011108542A1/ja active Application Filing
- 2011-03-03 TW TW100107202A patent/TW201202305A/zh unknown
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI580712B (zh) * | 2012-06-08 | 2017-05-01 | 東麗 杜邦股份有限公司 | 聚亞醯胺膜 |
US10076029B2 (en) | 2014-02-28 | 2018-09-11 | Ajinomoto Co., Inc. | Method for producing printed wiring board |
TWI655889B (zh) * | 2014-02-28 | 2019-04-01 | 日商味之素股份有限公司 | Printed wiring board manufacturing method |
CN110494475A (zh) * | 2017-09-04 | 2019-11-22 | 株式会社Lg化学 | 用于柔性显示装置基底的聚酰亚胺膜 |
CN110494475B (zh) * | 2017-09-04 | 2022-09-20 | 株式会社Lg化学 | 用于柔性显示装置基底的聚酰亚胺膜 |
US11485859B2 (en) | 2017-09-04 | 2022-11-01 | Lg Chem, Ltd. | Polyimide film for flexible display device substrate |
Also Published As
Publication number | Publication date |
---|---|
WO2011108542A1 (ja) | 2011-09-09 |
JP2013100379A (ja) | 2013-05-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201202305A (en) | Polyimide film, and laminate using the same and flexible thin film-based solar cell | |
JP5886883B2 (ja) | ポリイミドフィルム、およびこれらのポリイミド積層体、ポリイミド金属積層体 | |
JP5727885B2 (ja) | ポリイミドおよびポリイミドフィルム | |
TWI659064B (zh) | 顯示器基板用樹脂組成物、顯示器基板用樹脂薄膜及顯示器基板用樹脂薄膜的製造方法 | |
JP4119693B2 (ja) | 絶縁材付グラファイトフィルムおよびその製造方法 | |
TW200904855A (en) | Process for producing polyimide film, and polyimide film | |
JP5733072B2 (ja) | フレキシブルデバイス基板用ポリイミド前駆体樹脂組成物、フレキシブルデバイスの製造方法、及びフレキシブルデバイス | |
TW201641600A (zh) | 聚醯胺酸組成物、聚醯胺酸、聚醯亞胺組成物及聚醯亞胺 | |
WO2016013403A1 (ja) | ポリイミド、ポリアミド酸、樹脂組成物、及びフレキシブルディスプレイ用基板 | |
CN105254882A (zh) | 一种含联吡啶结构的聚酰亚胺及其制备方法 | |
JP2009221309A (ja) | 含リンエステル基含有テトラカルボン酸またはその二無水物及び含リンポリエステルイミド | |
JP5468575B2 (ja) | ポリアミド酸組成物およびポリイミド | |
TW202033357A (zh) | 金屬包覆層疊板及電路基板 | |
JP2022502553A (ja) | 表面品質が改善された高厚度ポリイミドフィルムおよびその製造方法 | |
TW200819501A (en) | Polyimide-based resin composition, method of manufacturing thereof and metal laminate | |
Bae et al. | Synthesis and characterization of polyimides from 4‐(diphenyl phosphine oxide) phenyl pyrromellitic dianhydride | |
JP5822064B2 (ja) | 芳香族ポリイミドシームレスベルトの製造方法 | |
JP6036361B2 (ja) | ポリイミドフィルムおよびそれを用いたポリイミド金属積層体 | |
KR20160094551A (ko) | 폴리아믹산 조성물 및 폴리이미드 기재 | |
WO2014199965A1 (ja) | ディスプレイ基板用樹脂組成物、ディスプレイ基板用樹脂薄膜及びディスプレイ基板用樹脂薄膜の製造方法 | |
KR101258432B1 (ko) | 고온에서의 열적 치수안정성이 우수한 폴리이미드 필름 및 그를 이용한 디스플레이 소자용 기판 | |
JP7101352B2 (ja) | ポリイミド、ポリイミドフィルム、ポリイミド金属積層体及び、ポリアミド酸 | |
TW201124449A (en) | Process for producing substrate and composition for use in same | |
JP2013032507A (ja) | ポリアミド酸組成物およびポリイミド | |
KR102644736B1 (ko) | 폴리아믹산 수용액 조성물 |