TW201201343A - Semiconductor device, method for manufacturing the same, and electronic device - Google Patents

Semiconductor device, method for manufacturing the same, and electronic device Download PDF

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Publication number
TW201201343A
TW201201343A TW100112831A TW100112831A TW201201343A TW 201201343 A TW201201343 A TW 201201343A TW 100112831 A TW100112831 A TW 100112831A TW 100112831 A TW100112831 A TW 100112831A TW 201201343 A TW201201343 A TW 201201343A
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Taiwan
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semiconductor wafer
semiconductor
electronic circuit
dam
forming
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TW100112831A
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English (en)
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TWI499025B (zh
Inventor
Satoru Wakiyama
Hiroshi Ozaki
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Sony Corp
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Publication of TW201201343A publication Critical patent/TW201201343A/zh
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Publication of TWI499025B publication Critical patent/TWI499025B/zh

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  • Electromagnetism (AREA)
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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
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201201343 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體裝置、一種用於製造其之方 法，及一種電子裝置，且特定言之係關於一種藉由將一第 二半導體晶片安裝於具有一電子電路區段（諸如，一固態 成像元件區段或類似物）之一第一半導體晶片上而封裝之 半導體裝置、一種用於製造其之方法，及一種具有其之電 子裝置.。 本申請案包含2010年5月14曰向曰本專利局申請之曰本 優先專利申請案第JP 2010_111910號中所揭示之有關標 的’該案之全文以引用之方式併入本文中。 【先前技術】 包含複數個疊層且密封於單一封裝内以達成一半導體裝 置之小型化、高功能性等之半導體晶片之所謂一疊晶式 (CoC)封裝之一封裝結構業已實用化。 該CoC封裝亦應用至（例如）一結構，其中疊層一記憶體 兀件及一處理器元件，且該c〇c封裝已實際用作為一 sip (系統級封裝）類型半導體裝置。 例如，當一 SIP係藉由如日本專利公開案第2008-192815 號（下文中稱為專利文獻丨）中之一c〇c封裝而形成時，對於 一上部半導體晶片與一下部半導體晶片之間的連接主要考 慮使用覆晶連接。 在將覆晶連接係應用至一 CoC封裝中的諸半導體晶片之 間的連接之情況中，一第一半導體晶片（下階段側半導體 153590.doc 201201343 晶片）係安裝於具有一外部連接端子及類似物之一佈線板 上。 一第二半導體晶片（上階段側半導體晶片）係覆晶連接至 該第一半導體晶片。 « 亦即，該第一半導體晶片與該第二半導體晶片之間的電 性及機械連接係藉由將設置於該第一半導體晶片之上表面 之一凸塊電極、與設置於該第二半導體晶片之下表面上的 一凸塊電極彼此連接而達成。 此外，一側填滿樹脂層被填入該第一半導體晶片與該第 二半導體晶片之間的一間隙中，以增進連接可靠性等。 例如，日本專利公開案第2005-276879號、第2008-252027號及第2008-124140號（在下文中分別稱為專利文獻 2、3及4)揭示用於形成一壩之技術，該壩係在以該側填滿 樹脂層填充該CoC封裝之該第一半導體晶片與該第二半導 體晶片之間的該間隙之結構之情況中，用於阻止該側填滿 樹脂層之流動。 該壩主要意欲防止由該側填滿樹脂層流入一電子電路區 段（諸如，形成於該第二半導體晶片之一安裝區域之一周 . 邊部分中的該第一半導體晶片中的一 A1電極）中所引起之 樹脂污染。 在上述構造之CoC封裝中’在樹脂固化反應期間會自該 側填滿樹脂層之形成於該第二半導體晶片之該周邊部分上 之一填角散發一反應氣體。 在專利文獻1至4中’當縮短該電子電路區段（諸如，該 153590.doc 201201343 A1電極及類似物）與該上部半導體晶片之間的一距離以使 該CoC封裝小型化時，上述氣體會污染該電子電路區段， 諸如該A1電極等。 結果導致發生導線接合故障及可靠性降低，因而難以使 該CoC封裝小型化。 此外’在於該下部半導體晶片上形成一固態成像元件之 一情況中’即使當一壩係形成於該固態成像元件區段與該 上部半導體晶片之間時’該成像元件區段亦會被自該上述 側填滿樹脂層之填角所散發之反應氣體所污染，而使得一 成像特性降低。 此外，已有研究一種半導體裝置，其中於一玻璃基板或 類似物上形成重新佈線，且以覆晶連接其上形成有一固態 成像區段之一半導體晶片。 為防止保護一凸塊電極之一樹脂污染該固態成像區段之 光接收表面，已有研究一種技術，其係用於在該凸塊電極 與其上形成有該固態成像區段之該半導體晶片之間形成一 壩。 然而，參考日本專利公開案第2〇〇7·533131號、第2〇〇2_ 118207號及第1^丨06-204442號（在下文中分別指專利文獻 5、6及7)及類似物顯示出：由一樹脂製成之一壩係僅形成 於該玻璃基板之側上，因而對於其上形成有該固態成像區 段之該半導體晶片之側之一密封性質存在疑問。 此外，此技術本質上僅在一經疊層之半導體晶片或其上 形成有一固態成像區段之該半導體晶片之一周邊部分上形 153590.doc • 6 · 201201343 成一凸塊電極。 此外，在專利文獻6及7中所揭示之諸半導體裝置中，在 一 A1電極之側上未形成壩，且因此存在該A1電極被污染之 虞。 【發明内容】 待解決之一問題在於，當縮短形成於該下部半導體晶片 上之該電子電路區段與該上部半導體晶片之間的距離時， 該電子電路區段會被自該上部半導體晶片與該下部半導體 晶片之間的該填充樹脂層之填角所散發之反應氣體污染。 因此’難以藉由縮短該上部半導體晶片與形成於該下部 半導體晶片上之該電子電路區段之間的距離而達成該半導 體裝置之小型化及一較高程度之集成化。 根據本發明之一實施例，提供一種半導體裝置，其包 括：一第一半導體晶片，其具有至少形成於該第一半導體 晶片之一表面上的一電子電路區段，且具有形成於與形成 該電子電路區段之表面相同之一表面上的一第一連接區 段；一第二半導體晶片，其具有形成於該第二半導體晶片 之一表面上的一第二連接區段，且以凸塊使該第一連接區 段與該第二連接區段彼此連接，藉此將該第二半導體晶片 女裝於該第-半導體晶片上；―塌，其經形成以填充於該 第二半導體晶片之一外緣之至少一部/分中的該第一半導體 明片與》亥第—半導體晶片之間的—間隙，胃第二半導體晶 片之該外緣之該部分係、在形成該電子電路區段《__區域之 -側上；及一側填滿樹脂層’其填入該第一半導體晶片與 153590.doc 201201343 該第二半導體晶片之間的該間隙中，藉由該壩防止該側填 滿樹脂層自該第二半導體晶片之該外緣向該電子電路區段 之一側突出。 在根據本發明之上述實施例之該半導體裝置中，具有形 成於該第二半導體晶片之一表面上的一第二連接區段之一 第二半導體晶片，係安裝於具有至少形成於該第一半導體 晶片之一表面上的一電子電路區段、且具有形成於與形成 該電子電路區段之表面相同之一表面上的一第一連接區段 之-第-半導體晶片上，其中該第一半導體晶片及該第二 半導體晶片#由-凸塊而在豸第一連接區段及該第二連接 區段彼此連接。 在此情況中，用於填充該第一半導體晶片與該第二半導 體晶片之間的-㈣之一塌係形成於該第三半導體晶片之 一外緣之至少一部分中，該第二半導體晶片之該外緣之該 部分係在形成該電子電路區段之一區域之一側上。 側填滿树脂層係填入該第一半導體晶片與該第二半導 體晶片之間的該間隙中’藉由該壩防止該側填滿樹脂層自 該第二半導體晶片之該外緣向該電子電路區段之一側突 出。 此外，根據本發明之一實施例，提供一種用於製造一半 導體裝置之方法，該方法包含如下步驟：在一第一半導體 晶片之-表面上至少形成一電子電路區段；及在與形成該 電子電路區段之表面相同之一表面上形成一第一連接區 段，在一第二半導體晶片之一表面上形成一第二連接區 I53590.doc 201201343 段；以凸塊使該第-連接區段與該第二連接區段彼此連 接，藉此將該第二半導體晶片安裝於該第一半導體晶片 上；形成-場，其用於填充於該第二半導體晶片之一外緣 之至少-部分中的該第-半導體晶片與該第二半導體晶片 之間的-間隙’該第：半導體晶片之該外緣之該部分係在 形成該電子電路區段之一區域之一側上；且形成一側填滿 樹脂層，比將該側填滿樹脂層填充於該第一半導體晶片與 該第二半導體晶片之間的該間隙中，#由該壩防止該側填 滿樹脂層自該第二半導體晶片之該外緣向該電子電路區段 之一側突出。 在用於製造根據本發明之上述實施例之該半導體裝置之 方法中’在-第一半導體晶片之一表面上至少形成一電子 電路區段’且在與形成該電子電路區段之表面相同之一表 面上形成一第一連接區段。 此外I帛一半導體晶片之一表面上形成一第二連接 區段。 、接著，以凸塊使該第-連接區段與該第二連接區段彼此 連接’藉此將該第：半導體晶片安裝於該第—半導體晶片 上。 曰在上文中帛於填充該第一半導體晶片與該第二半導體 片之間的pB’隙之—壩係形成於該第二半導體晶片之一 卜緣之至7 0p分上，該第二半導體晶片之該外緣之該部 分係！形成該電子電路區段之一區域之一側上。 著形成你ί填滿樹脂層以填入該第一半導體晶片與 153590.doc -9- 201201343 該第二半導體晶片之間的該間隙中，#由該壩防止該側填 滿樹脂層自該第二半導體晶片之該外緣向該電子電路區段 之一側突出。 根據本發明之一實施例，提供一種電子裝置，其包括： 一固態成像裝置；-光學系統，其用於引導人射光至該固 態成像裝置之-成像區段；及一信號處理電路，其用於處 理該固態成像裝置之-輸出信號；其中該固態成像裝置包 含：一第-半導體晶片’其具有至少形成於該第一半導體 晶片之一表面上的一固態成像區段，且具有形成於與形成 該固態成像區段之表面相同之—表面上的—第—連接區 段；一第二半導體晶片，其具有形成於該第二半導體晶片 之一表面上的-第二連接區段，且以凸塊使該第一連接區 段與該第二連接區段彼此連接，藉此將該第二半導體晶片 安裝於該第一半導體晶片上；一壩，其經形成以填充於該 第二半導體晶片之一外緣之至少一部分中的該第一半導體 晶片與該第二半導體晶片之間的-間隙:，該第二半導體晶 片之該外緣之該部分係在形成該⑽成像區段之—區域之 -側上，·及-側填滿樹脂層，其填入該第一半導體晶片與 該第一半導體晶片之間的該間隙中’藉由該塌防止該側填 滿树脂層自該第二半導體晶片之該外緣向該固態成像區段 之一側突出。 根據本發明之上述實施例 像裝置；一光學系統，其用 置之一成像區段；及一信號 之該電子裝置包含：一固態成 於引導入射光至該固態成像裝 處理電路，其用於處理該固態 I53590.doc 201201343 · 成像裝置之一輸出信號。 在該固態成像裝置中，一第二半導體晶片係安裝於一第 一半導體晶片上，上述第二半導體晶片具有形成於該第二 半導體晶片之一表面上的一第二連接區段，而上述第一半 導體晶片具有至少形成於該第一半導體晶片之一表面上的 一固態成像區段，且具有形成於與形成該固態成像區段之 表面相同之一表面上之一第一連接區段；該第一半導體晶 片及該第二半導體晶片係藉由一凸塊而在該第一連接區段 及該第二連接區段彼此連接。此外，用於填充於該第一半 導體晶片與該第二半導體晶片之間的一間隙之一壩係形成 於該第二半導體晶片之一外緣之至少一部分中，該第二半 導體晶片之該外緣之該部分係在形成該固態成像區段之一 區域之一側上。此外，一側填滿樹脂層係填入該第一半導 體晶片與該第二半導體晶片之間的該間隙中，藉由該壩防 止該側填滿樹脂層自該第二半導體晶片之該外緣向該固態 成像區段之一側突出。 在根據本發明之上述實施例之該半導體裝置中，該壩防 止該第一半導體晶片與該第二半導體晶片之間的該側填滿 樹脂層自該第一半導體晶片之該外緣向該電子電路區段之 側突出。因此，在該電子電路區段之附近未形成該側填滿 樹脂層之填角，而可防止由自該填角散發之一反應氣體所 引起之該電子電路區段之污染。 因此，可縮短形成於該第一半導體晶片上的該電子電路 區段與該第二半導體晶片之間的距離，因而可達成該半導 153590.doc • 11. 201201343 體裝置之小型化及一較高程度之集成化。 用於製造根據本發明之上述實施例之該半導體裝置之方 法中形成該塌，以防止該第一半導體晶片與該第二半導體 晶片之間的該侧填滿樹脂層自該第二半導體晶片之該外緣 向該電子電路區段之側突出。因此，在該電子電路區段之 附近未形成該侧填滿樹脂層之填角，而可防止由自該填角 散發之一反應氣體所引起之該電子電路區段之污染。 因此，可縮短形成於該第一半導體晶片上的該電子電路 區段與該第二半導體晶片之間的距離.，因而可達成該半導 體裝置之小型化及一較高程度之集成化。 在形成根據本發明之上述實施例之該電子裝置之該固態 成像裝置中，該壩防止該第一半導體晶片與該第二半導體 晶片之間的該側填滿樹脂層自該第二半導體晶片之該外緣 向該電子電路區段之側突出。因此，在該電子電路區段之 附近未形成該側填滿樹脂層之填角，而可防止由自該填角 散發之一反應氣體所引起之該電子電路區段之污染。 因此，可縮短形成於該第一半導體晶片上的該固態成像 區段與該第二半導體晶片之間的距離，因而可達成該半導 體裝置之小型化及一較高程度之集成化。 【實施方式】 下文將參考圖式，描述根據本發明之一固態成像裝置、 用於製造其之一方法、一設計方法及一電子裝置之較佳實 施例。 又，將按以下順序進行描述。 153590.doc -12· 201201343 1. 第一實施例（半導體裝置之基本構造及製造方法） 2. 第二實施例（以使彼此相鄰之方式形成電子電路區段及 第--導體晶片之構造） 3. 第三實施例（在沿著第二半導體晶片之外緣之形狀中形 成壩之構造） 4. 第四實施例（使用樹脂膜作為側填滿樹脂層之製造方 法） 5_第五實施例（由樹脂形成壩之構造） 6.第六實施例（對電子裝置之應用） <第一實施例> [半導體裝置之構造] 圖1A係根據本實施例之一半導體裝置之一平面圖。圖 1B及圖1C係分別沿著圖1A之X-X，及Y-Y，線截取之示意截 面圖。 在一第一半導體晶片10之一表面上至少形成一電子電路 區段。 例如’一固態成像區段11形成作為上文所描述之該電子 電路區段。 在該固態成像區段11中，例如針對各像素以使彼此分開 之方式形成光電二極體，且包含光電二極體之像素係以一 矩陣之形式配置以形成一光接收表面。例如，視需要在該 光接收表面上形成一絕緣膜、一彩色濾光片、一晶片上透 鏡等。 此外，例如’將一銲墊電極12形成作為該電子電路區 153590.doc •13· 201201343 段。 該銲塾電極12係由（例如）鋁形成。該銲墊電極12係埋入 該第一半導體晶片10之一頂層之附近。該銲塾電極12之一 部分藉由一銲墊開口部分12a而於頂面側上露出。 此外’可包含其他周邊電路區段、舉例而言諸如一比較 器及一 DA轉換器作為該電子電路區段。 例如，以埋入該第一半導體晶片1〇内之方式，形成連接 於該固態成像區段11、該銲墊電極12等之内部佈線13。 在與形成有該電子電路區段之該第一半導體晶片1〇之表 面相同之該第一半導體晶片1〇之表面上，形成一凸塊下膜 20作為一第一連接區段。 另一方面，在一第二半導體晶片30上形成佈線3丨及類似 物’且在該第二半導體晶片3〇之一表面上形成一凸塊下膜 32作為一第二連接區段。 該第二半導體晶片3〇係安裝於該第一半導體晶片1〇上， 該第一半導體晶片10及該第二半導體晶片3〇係藉由若干凸 塊24而在該凸塊下膜2〇及該凸塊下膜32處彼此連接。 在此情況中’用於填充該第一半導體晶片1〇與該第二半 導體晶片30之間的一間隙之一壩25係形成於該第二半導體 晶片30之一外緣之至少一部分上，該半導體晶片3〇之該外 緣之該部分係在形成該電子電路區段之一區域之側上。 此外，在本實施例中，在該第一半導體晶片1〇之側上形 成一凸塊下膜22，且在該第二半導體晶片3〇之側上形成一 凸塊下膜34 ^以使該凸塊下膜22與該凸塊下膜34彼此連接 153590.doc -14· 201201343 之方式而形成該上述壩25。該撑 。該壩25係藉由與形成該等凸塊
間隙《該壩25及該等凸塊23共同形成一環形形狀。 該第一半導體晶片1〇與該第二半導體晶片3〇之間的間隙 係以一側填滿樹脂層26予以填充，藉由該壩25防止該底部 樹脂層26自該第二半導體晶片3〇之該外緣向該電子電路區 段之側突出。 在根據本實施例之該半導體裝置中，該側填滿樹脂層％ 在該第二半導體晶片30之未形成有該壩25之一周邊部分具 有一填角26a。 然而，該上述壩25防止該側填滿樹脂層26自該第二半導 體晶片3 0之該外緣向該電子電路區段之側突出。 例如，為防止來自該填角之一反應氣體之污染，重要的 疋在該填角與s亥電子電路區段之間確保2 〇 〇 或更大之一 距離。 在本實施例中，可在該側填滿樹脂層26之填角與該電子 電路區段（諸如，該固態成像裝置、該銲墊電極等）之間確 保200 μηι或更大之一距離。 因此，可防止在樹脂固化反應期間由自該底部樹脂層26 之填角散發之一反應氣體所引起之該電子電路區段之污 染。 在該上述實施例中，已顯示具有該固態成像裝置及該銲 153590.doc •15- 201201343 塾電極作為該電子電路區段之一構造。然而，該實施例適 用於可望避免由另-反應氣體所引起之污染之該固態成像 裝置及該銲墊電極之一者或一電子電路區段之一情況。 如上文射田述，在本實施例中’當該電子電路區段係設 置於相鄰於該第一半導體晶片之兩個相對側之諸部分之各 者中時，在δ亥等兩側上形成一塌。當該電子電路區段係設 置於另-側或複數側上時，可在該側或該等複數侧上形成 一壩。 用於形成該壩25之一材料可藉由與形成於該第一半導體 晶片或第二半導體晶片上的該等凸塊相同之一層而形成， 或可為-不同層。例如，可使用一金屬(諸如，Cu、Au、 Τι 等）或一焊接材料（諸如，Sn、SnAg、SnAg(：u、sn(：u、 AuSn等）。 因此，該第二半導體晶片及該電子電路區段（諸如，該 銲墊電極、該固態成像裝置等）可彼此近接，因此可使該 半導體裝置小型化。 [用於製造半導體裝置之方法] 接著將參考圖2A至圖6C’描述一種用於製造根據本實 施例之該半導體裝置之方法。 圖2A係根據本實施例之該第一半導體晶片之一平面圖。 圖2B及圖2C係分別沿著圖2A之X-X’及γ-γ，線截取之示意 截面圖。 在該第一半導體晶片1〇之一表面上至少形成一電子電路 區段。例如，形成一固態成像區段丨丨作為該上述之電子電 153590.doc -16 - 201201343 路區段 在該固態成像區段11中，例如針對各像素以使彼此分開 之方式形成光電二極體，且包含光電二極體之像素係以一 矩陣之形式配置以形成一光接收表面。例如，視需要在該 光接收表面上形成一絕緣膜、一彩色濾光片、—晶片上透 鏡等。 Μ 此外，形成例如一銲墊電極12作為該電子電路區段。 該銲墊電極12係由（例如）鋁形成。該銲墊電極12係以埋 入該第一半導體晶片10之一頂層之附近之方式形成。形成 一銲墊開口部分12a，使該銲墊電極12之一部分露出。 此外’可包含其他周邊電路區段、舉例而言諸如一比較 器及一 DA轉換器作為該電子電路區段。 此外，例如，以埋入該第一半導體晶片1〇内之方式形 成連接於該固態成像區段11、該銲墊電極12等之内部佈線 13。 在與形成該電子電路區段之該第一半導體晶片1〇之表面 相同之該第一半導體晶片1〇之表面上，形成一凸塊下膜2〇 作為一第一連接區段。 此外’在用於安裝包含用於形成一壩之一區域之一第二 半導體晶片之一區域之一周邊部分上，形成一環形形狀之 一凸塊下膜22。 由焊料等製成之若干凸塊21及23分別形成於上文所描述 之該凸塊下膜20及該凸塊下膜22上。 該凸塊23係在用於安裝如上文所描述之該第二半導體晶 153590.doc -17· 201201343 片之該區域之該周邊部分上形成為一環形形狀。 圖3A係根據本實施例之該第二半導體晶片之一平面圖。 圖3B及圖3C係分別沿著圖3AiX_x，及γ_γ，線截取之示意 截面圖。 在該第二半導體晶片30上形成佈線31等且在該第二半 導體晶片30之一表面上形成一凸塊下膜32作為一第二連接 區段。 此外，在§亥第二半導體晶片之一外緣之兩側上形成一線 性形狀之一凸塊下膜34，該兩側為用於形成該壩之一區 域。 由焊料等製成之若干凸塊33及35分別形成於上文所描述 之該凸塊下膜32及該凸塊下膜34上。 該等凸塊35係在如上文所描述之該第二半導體晶片之該 外緣之兩側上形成為一線性形狀。 圖4 Α係顯示製造根據本實施例之該半導體裝置之一程序 之一平面圖，圖4B及圖4C係分別沿著圖4Α2χ_χ，及γ_γ， 線截取之示意截面圖。 適當使用一夾頭40或類似物，使上文所描述之該第一半 導體ββ片之該等凸塊21及該凸塊23與該第二半導體曰片 30之該等凸塊33及該等凸塊35對準，而將該第二半導體晶 片30安裝於該第一半導體晶片10上。 圖5 Α係顯示製造根據本實施例之該半導體裝置之一程序 之一平面圖。圖5B及圖5C係分別沿著圖5AiX_x，及γ_γ, 線截取之示意截面圖。 153590.doc • 18 - 201201343 適當使用一接合頭41或類似物，藉由在一焊料熔融點下 的壓力接觸而在一表面氧化膜令產生一斷裂點，且在加熱 至一焊料熔融溫度後，使該等烊料藉由在_x方向及—γ 方向上的振盪操作而彼此連接，使該等凸塊21及該等凸塊 33整合成凸塊24。 在上述之同時，使該凸塊23及該等凸塊35整合成用於形 成該壩之該區域中的一壩25。 如上文所描述，在本實施例中，當該電子電路區段係設 置於相鄰於s亥第一半導體晶片之兩個相對侧之諸部分之各 者中時，在该等兩個側上形成一塌。當該電子電路區段係 設置於另一側或複數側上時’在該側或該等複數側上形成 一塌。 此外，即使當預先應用一助熔劑以連接由焊料製成之諸 凸塊時，亦不存在問題。又，形成該壩之該凸塊23及該等 凸塊35之各者與該第一半導體晶片1〇之該等凸塊η及該第 二半導體晶片30之該等凸塊33可同時形成或分開形成。 圖6A係顯示製造根據本實施例之該半導體裝置之一程序 之一平面圖。圖6B及圖此係分別沿著圖6AiXX,及γγι 線截取之示意截面圖。 形成一侧填滿樹脂層26以填入該第一半導體晶片1〇與該 第一半導體晶片30之Μ的間隱:’藉由該壩25防止該側填滿 樹脂層26自肖第二半導體晶片3〇之該外缘向該電子電路區 段（諸如，忒固嘘成像區段丨i、該銲墊電極12等）之該側突 出。 153590.doc -19· 201201343 例如，使用一施配器26d，將一液體形式之所要形成該 側填滿樹脂層之-樹脂注入至該第一半導體晶片1〇與該第 二半導體晶片30之間的間隙中。 在填充該上述樹脂時，例如期望形成一樹脂注入口及— 空氣出口以確保一通道，以供空氣自該第一半導體晶片 與該第二半導體晶片3 〇之間的間隙逸出。 如上文所描述，在本實施例中，該電子電路區段係設置 於相鄰於s亥第一半導體晶片之兩個相對側之諸部分之各者 中。除了上述側外，其他側之一者係一樹脂注入口，而另 一侧係一空氣出口。 如上文所描述在該第一半導體晶片1〇與該第二半導體晶 片30之間的間隙中以樹脂形成該側填滿樹脂層％後執行 一熱固程序。 在上述熱固程序中’會自該側填滿樹脂層26之填角散發 一反應氣體。 在用於製造根據本實施例之該半導體裝置之方法中，該 上述壩25防止自該第二半導體晶片30之該外緣至該電子電 路區段之側之該側填滿樹脂層26之突出。 在該側填滿樹脂層26之填角與該電子電路區段（諸如， 該固態成像裝置、該銲墊電極等）之間可確保2〇〇 μπι或更 大之一距離。 因此，可防止在樹脂固化反應期間由自該側填滿樹脂層 26之填角散發的反應氣體所引起之該電子電路區段之污 染。 153590.doc •20· 201201343 因此，在用於製造根據本實施例之該半導體裝置之方法 中，該第二半導體晶片及該電子電路區段（諸如，該銲塾 電極、該固態成像裝置等）可彼此近接，因此可使該半導 體裝置小型化。 <第二實施例> [半導體裝置之構造] 圖7 A係根據本貫施例之一半導體裝置之一平面圖。圖 7B及圖7C係分別沿著圖7A之X-X，及γ_γ，線截取之示意截 面圖。 於一經疊層之第二半導體晶片之周邊之一區域中未形成 一側填滿樹脂層26之填角’在該區域中由一壩25防止該側 填滿樹脂層層26自該第二半導體晶片3〇之該外緣向一電子 電路區段之側突出。 本實施例具有一佈局，其係使該電子電路區段（諸如， 一銲墊電極、一固態成像區段等）及該第二半導體晶片在 形成有該壩25之區域中彼此相鄰。在此例中，相鄰表示該 電子電路區段與該第二半導體晶片之間的一距離為零或接 近零。 除上述外，該第二實施例具有與該第一實施例類似之構 造。 在未形成有該上述之壩25之一區域中形成一填角而在 該電子電路區段所對向之所有側上皆形成一壩。因此，即 使在該填角及該電子電路區段最靠近之一部分中，仍可在 該填角與該電子電路區段之間確保雇哗或更大之一足夠 153590.doc -21- 201201343 距離。 因此’可防止在樹脂固化反應期間由自該側填滿樹脂層 26之填角散發的反應氣體所引起之該電子電路區段之污 染。 因此’該第二半導體晶片及該電子電路區段（諸如，該 銲墊電極、該固態成像裝置等）可彼此近接，因此可使該 半導體裝置小型化。 <第三實施例> [半導體裝置之構造] 圖8Α係根據本實施例之一半導體裝置之一平面圖。圖 8Β及圖8C係分別沿著圖8Α之Χ-Χ，及γ-γ，線截取之示意截 面圖。. 沿著一第二半導體晶片之該外緣之一形狀而形成一塌。 特定言之’在本實施例中，在由凸塊23形成一壩之一第一 半導體晶片10之側上、且於靠近該第二半導體晶片3〇之區 域而佈局有一固態成像區段11之一部分中，於一環形凸塊 23中形成一凹形部分27。 當一電子電路區段（諸如，一銲墊電極12、該固態成像 區段11等）存在於該第二半導體晶片3〇之附近時，該電子 電路區段之長度短於該第二半導體晶片3〇之側壁之長度， 其僅能在接近於該電子電路區段之一部分中形成一塌。 除上述外，該第三實施例具有與該第一實施例類似之構 造。 在根據本實施例之該半導體裝置中，一側填滿樹脂層％ 153590.doc -22- 201201343 在該第二半導體晶片30之未形成該壩25之一周邊部分中具 有一填角26a。 s亥上述壩25係防止該侧填滿樹脂層26自該第二半導體晶 片30之該外緣向該電子電路區段之側突出。 在本實施例中，可在該側填滿樹脂層26之填角與該電子 電路區段（諸如，該固態成像装置、該銲墊電極等）之間確 保200 μιη或更大之一足夠距離。 因此’可防止在樹脂固化反應期間由自該側填滿樹脂層 26之填角散發的反應氣體所引起之該電子電路區段之污 染0 因此’該第二半導體晶片及該電子電路區段（諸如，該 銲墊電極、該固態成像裝置等）可彼此近接，因此可使該 半導體裝置小型化。 如上文所描述，即使當該權形成區域僅在該電子電路區 段之附近時’亦可獲得前述效果。 <第四實施例> [用於製造半導體裝置之方法] 圖9Α及圖9Β係顯示製造根據本實施例之一半導體裝置 之一過程之示意圖，且係對應於圖1A至圖1C中所示之該 半導體裝置中的X-X’及γ-γι線之示意截面圖。 當形成一侧填滿樹脂層時，在一第二半導體晶片3〇上可 形成一膜形之側填滿樹脂層2 6 f，且樹脂之填充可在一第 一半導體晶片10之凸塊連接時作為該側填滿樹脂層而發揮 功能。 153590.doc -23- 201201343 或者，在該第一半導體晶片10上可形成一膜形側填滿樹 脂層26f’且樹脂之填充可在該第二半導體晶片3〇之凸塊 連接時作為該側填滿樹脂層而發揮功能。 如圖9A及圖9B所示，該膜形側填滿樹脂層26f經受壓力 而填充於該第一半導體晶片10及該第二半導體晶片3〇之間 的間隙，且使過剩量排出至該間隙之外部。因此，預留可 排出過剩量之一樹脂出口之一部分係重要的。 如上文所描述，在本實施例中，一電子電路區段係設置 於相鄰於該第二半導體晶片之兩個相對側之諸部分之各者 中。除了上述諸側外’兩側之諸區域為一樹脂出口。 除上述外，該第四實施例具有與該第一實施例類似之構 造。 在用於製造根據本實施例之該半導體裝置之方法中，該 上述壩25防止該側填滿樹脂層26自該第二半導體晶片3 〇之 該外緣向該電子電路區段之側突出。 在該側填滿樹脂層26之填角與該電子電路區段（諸如， 一固態成像裝置、一銲墊電極等）之間可確保2〇〇 μιη或更 大之一距離。 因此，可防止在樹脂固化反應期間由自該側填滿樹脂層 26之填角散發的反應氣體所引起之該電子電路區段之污 染。 因此，在用於製造根據本實施例之該半導體裝置之方法 中’該第二半導體晶片及該電子電路區段（諸如，該銲墊 電極、該固態成像區段等）可彼此近接，因此可使該半導 153590.doc -24· 201201343 體裝置小型化。 <第五實施例> [半導體裝置之構造] 圖10A係根據本實施例之一半導體裝置之一平面圖。圖 10B及圖10C係分別沿著圖10A之X-X，及γ·γ，線截取之示意 截面圖。 用於防止一側填滿樹脂層26自一第二半導體晶片30之外 緣向一電子電路區段之側突出之一壩可為一樹脂材料。該 樹脂材料之一具體實例為一光敏固化樹脂或一熱固性樹脂 (諸如，一環氧樹脂、一丙烯酸樹脂等）。 特定言之’在本實施例中，形成一樹脂層23r代替一第 一半導體晶片10之側上的該凸塊下膜22及該凸塊23。 形成一樹脂層35r代替該第二半導體晶片30之側上的該 凸塊下膜34及該等凸塊35。 此外’在該電子電路區段之側上的該第二半導體晶片30 之一周邊部分上，以彼此黏著之該上述樹脂層23r及該樹 脂層35r而形成樹脂製之一壩25r。 除上述外，該第五實施例具有與該第一實施例類似之構 造。 在根據本實施例之該半導體裝置中，該侧填滿樹脂層26 在該第二半導體晶片30之未形成該壩25ι之一周邊部分中 具有一填角26a。 該上述壩25ι•係防止該側填滿樹脂層26自該第二半導體 晶片30之該外緣向該電子電路區段之側突出。 153590.doc -25- 201201343 在本實施例中，可在該側填滿樹脂層26之填角與該電子 電路區段（諸如，該固態成像装置、該銲墊電極等）之間確 保200 μιη或更大之一足夠距離》 因此，可防止在樹脂固化反應期間由自該側填滿樹脂層 26之填角散發的反應氣體所引起之該電子電路區段之污 染。 因此，該第二半導體晶片及該電子電路區段（諸如，該 銲墊電極、該固態成像區段或類似物）可接近於彼此，且 因此可使該半導體裝置小型化。 [用於製造半導體裝置之方法] 圖11Α及圖11Β係顯示製造根據本實施例之一半導體裝 置之一程序之示意圖，且係對應於圖10A至圖10C中所示 之該半導體裝置中的χ-χ|及Y-Y’線之示意截面圖。 在本實施例中，圖案化形成一樹脂層23r，代替一第一 半導體晶片10之側上的該凸塊下膜22及該凸塊23。 此外，圖案化形成一樹脂層3 5 r，代替一第二半導體晶 片30之側上的該凸塊下膜34及該等凸塊35。 用於圖案化形成該樹脂之一方法可藉由膜疊層、旋塗或 類似方式而將一樹脂材料形成為一膜，並執行一微影程序 等而實施。 例如’一光敏固化樹脂或一熱固性樹脂（諸如，一環氧 樹脂或一丙烯酸樹脂）可用作為該樹脂層23r及該樹脂層 35r。 接著，在該電子電路區段之側上的該第二半導體晶片3〇 153590.doc -26- 201201343 之一周邊部分上用彼此黏著之該樹脂層23r及該樹脂層35r 形成由樹脂製成之一壩2 5r。 在凸塊連接或分開固化期間執行加熱，以使該樹脂層 23r與該第一半導體晶片1〇之間黏著、使該樹脂層3分與該 第二半導體晶片30之間黏著，，及使該樹脂層2打與該樹脂 層35r之間黏著。 除上述外，該第五實施例具有與該第一實施例類似之構 造。 在用於製造根據本實施例之該半導體裝置之方法中，該 上述塌25r防止該側填滿樹脂層26自該第二半導體晶片3〇 之該外緣向該電子電路區段之側突出。 在該側填滿樹脂層26之填角與該電子電路區段（諸如， 固態成像區段、一鲜塾電極等）之間可確保200 μιη或更 大之一距離。 因此，可防止在樹脂固化反應期間由自該側填滿樹脂層 26之填角散發的反應氣體所引起之該電子電路區段之污 染。 因此，在用於製造根據本實施例之該半導體裝置之方法 中’該第二半導體晶片及該電子電路區段（諸如，該銲塾 電極、該固態成像區段等）可彼此近接，因此可使該半導 體裝置小型化。 <第六實施例> [對電子裝置之應用] 圖12係作為根據本實施例之一電子裝置之一電子裝置之 153590.doc •27· 201201343 一不意方塊圖。根據本實施例之該電子裝置係可拍攝一靜 止景彡像或拍攝一移動影像之一視訊電子裝置之一實例。 根據本實施例之該電子裝置具有一影像感測器（具有一 固態成像元件區段之半導體裝置）5〇、一光學系統5丨、一 信號處理電路53等。 在本實施例中，將具有根據前述實施例之各者之該固態 成像元件區段之該半導體裝置結合作為該上述影像感測器 50 ° 该光學系統5 1根據自一物體入射至該影像感測器5〇之影 像拾取表面之影像光（入射光）而形成一影像。因此，在某 一段時間内，在該影像感測器50中累積一對應信號電荷。 該經累積之信號電荷被提取為一輸出信號v〇ut。 光閘裝置控制該影像感測器5 〇以受光之一週期及該影 像感測器5 0被遮光之一週期。 該影像處理區段供應一驅動信號，其用於控制該影像感 測器50之傳送操作及該光閘裝置之光閘操作。根據由該影 像處理區段供應之該驅動信號（時序信號）而執行該影像感 測器50之信號傳送。該信號處理電路幻可使該影像感測器 之輸出信號Vout經受各種信號處理，並輸出結果作為一 視訊信號。由該信號處理所產生之該視訊信號係儲存於一 儲存媒體（諸如，一記憶體或類似物）上，或輸出至一監視 器。 ι 此外，本發明不限於用於感測入射可見光量之一分佈且 拾取該分佈作為一影像之設置於半導體裝置中之固態成像 153590.doc -28 - 201201343 元件區段之應用。 本發明適用於用於拾取入射紅外射線、X射線或粒子等 作為一影像之固態成像區段，且在一廣義上，適用於用於 . 感測另一物理量（諸如，壓力、電容等）之一分佈，且拾取 該分佈作為一影像之固態成像區段（―般而言，諸如指紋 ‘ 偵測感測器等）。 此外’本發明適用於（例如）數位靜止電子裝置、視訊電 子裝置、及具有一成像功能之電子裝置（諸如，可攜式電 話）。 上文所描述之該影像感測器50可用作為具有一固態成像 几件區段之一半導體裝置，其係用於視訊電子裝置、數位 靜止電子裝置以及行動裝置（諸如，可攜式電話）之一電子 裝置模組或類似物。 本發明不限於上文之描述。 例如’儘管上文巾將-料電極H態成像區段描述 為-電子電路區段，但是本發明之一實施例亦適用於其他 電子電路區段。 本發明之實施例適用於各種感測器（諸如_CM0S(互補 • 金屬氧化物半導體）影像感測器及-CCD(電㈣合裝置）影 像感測器）作為該固態成像區段。 此外，在不脫離本發明之精神之情況下，可作各種改 變。 熟習此項技術者應瞭解’凡是在隨附之巾請專利範圍或 其等效物之範嘴内，得視設計需求及其他因素而作各種修 153590.doc •29- 201201343 改、組合、子組合及替代。 【圖式簡單說明】 圖1A係根據本發明之一第一實施例之一半導體裝置之一 平面圖’及圖1B及圖1C係分別沿著圖1A之X-X1及Y-Y'線 截取之示意截面圖； 圖2 A係根據本發明之該第—實施例之一第一半導體晶片 之一平面圖，及圖2B及圖2C係分別沿著圖2A之X-X，及γ_ Υ*線截取之示意截面圖； 圖3 Α係根據本發明之該第一實施例之一第二半導體晶片 之一平面圖，及圖3B及圖3C係分別沿著圖3A之X-X，及γ_ Υ'線截取之示意截面圖； 圖4 Α係顯示製造根據本發明之該第一實施例之該半導體 裝置之一過程之一平面圖，及圖4B及圖4C係分別沿著圖 4A之X-X，及Y-Y·線截取之示意截面圖； 圖5 A係顯示製造根據本發明之該第一實施例之該半導體 裝置之一過程之一平面圖，及圖5B及圖5C係分別沿著圖 5A之X-X，及Y-Y，線截取之示意截面圖； 圖6A係顯不製造根據本發明之該第一實施例之該半導體 裝置之-過程之—平面圖，&圖沾及圖6。係分別沿著圖 6A之X-X，及γ_γ，線截取之示意截面圖； 圖7A係根據本發明之一第 二貫施例之一半導體裝置之一
-X，及 Y-Y，線 截取之示意截面圖； 圖8 A係根據本發明之一第三 二貫施例之一半導體裝置之一 153590.doc •30· 201201343 平面圖，及圖8B及圖8C係分別沿著圖8Α2χ_χ，及γ_γ，線 截取之示意截面圖； 圖9Α及圖9Β係顯示製造根據本發明之一第四實施例之 半導體裝置之一過程之示意圖，且係對應於圖丨八至圖 ic中所顯示之該半導體裝置中的線χ_χ，及γ_γ，之示意截面 園， 圖10A係根據本發明之一第五實施例之一半導體裝置之 平面圖’及圖1 0B及圖1 0C係分別沿著圖i〇A之又_又，及γ_ Υ'線截取之示意戴面圖； 圖11Α及圖UB係顯示製造根據本發明之該第五實施例 之該半導體裝置之一過程之示意圖’且係對應於圖10Α至 圖10C中所顯示之該半導體裝置中的線χ_χ，及γ_γ，之示意 截面圖；及 圖12係根據一第六實施例之一電子裝置之一示意方塊 圖。 【主要元件符號說明】 10 第一半導體晶 11 固態成像區段 12 鲜塾電極 12a 銲墊開口部分 13 内部佈線 20 凸塊下膜 21 凸塊 22 凸.塊下膜 153590.doc -31 201201343 23 凸塊 2 3 r 樹脂層 24 凸塊 25 壩 25r 壩 26 側填滿樹脂層 26a 側填滿樹脂層之填角 26d 施配器 26f 膜形側填滿樹脂層 27 凹形部分 30 第二半導體晶片 31 佈線 32 凸塊下膜 33 凸塊 34 凸塊下膜 35 凸塊 35r 樹脂層 40 夾頭 41 接合頭 153590.doc -32-

Claims (1)

  1. 201201343 七、申請專利範園： 1· 一種半導體裝置，其包括： 一第一半導體晶片，其具有至少形成於該第一半導體 . 晶片之一表面上的一電子電路區段，且具有形成於與形 成該電子電路區段之表面相同之一表面上的一第一連接 •區段； 一第二半導體晶片，其具有形成於該第二半導體晶片 之一表面上的一第二連接區段，且以凸塊使該第一連接 區4又與該第一連接區段彼此連接，藉此將該第二半導體 晶片安裝於該第一半導體晶片上； 一壩’其經形成以填充於該第二半導體晶片之一外緣 之至少一部分中的該第一半導體晶片與該第二半導體晶 片之間的一間隙，該第二半導體晶片之該外緣之該部分 係在形成5亥電子電路區段之一區域之一側上：及 一側填滿樹脂層，其填入該第一半導體晶片與該第二 半導體晶片之間的該間隙中，藉由該壩防止該側填滿樹 脂層自該第二半導體晶片之該外緣向該電子電路區段之 一側突出。 2. 如請求項1之半導體裝置， 其中該壩係藉由與形成該凸塊之一導電層相同之一層 而形成。 3. 如請求項1之半導體裝置， 其中該壩係藉由一樹脂而形成。 4·如請求項1之半導體裝置， 153590.doc 201201343 /、中該電子電路區段係一辉塾電極。 5. 如請求項1之半導體裝置， 其中該電子電路區段係一固態成像區段。 6. 如請求項1之半導體裝置， 其中該電子電路區段及該第二半導體晶片係以彼此相 . 鄰之方式形成。 7. 如請求項1之半導體裝置， 中著該第二半導體晶片之該外緣之一形狀而形成 該壩。 8. 一種用於製造一半導體裝置之方法，該方法包括如下步 驟： 在第一半導體晶片之一表面上至少形成一電子電路 區段，及在與形成該電子電路區段之表面相同之一表面 上形成一第一連接區段； 在一第二半導體晶片之一表面上形成一第二連接區 段； .以凸塊使該第一連接區段與該第二連接區段彼此連 接，藉此將該第二半導體晶片安裝於該第一半導體晶片 上； 形成一壩，其用於填充於該第二半導體晶片之一外緣 . 之至少一部分中的該第一半導體晶片與該第二半導體晶 · 片之間的一間隙，該第二半導體晶片之該外緣之該部分 係在形成該電子電路區段之一區域之一側上；及 形成一側填滿樹脂層，以將該側填滿樹脂層填充於該 153590.doc 201201343 9. 10. 11. 12. 13. 14. 15. 第一半導體晶片與該第二半導體晶片之間的該間隙中， 藉由該壩防止該側填滿樹脂層自該第二半導體晶片之該 外緣向該電子電路區段之一側突出。 如請求項8之用於製造該半導體裝置之方法， 其中在形成該壩之步驟中，該壩係藉由與形成該凸塊 之一導電層相同之一層而形成。 如請求項8之用於製造該半導體裝置之方法， 其中在形成該壩之步驟中，該壩係藉由一樹脂而形 成。 如請求項8之用於製造該半導體裝置之方法， 八中在於該第一半導體晶片之一表面上至少形成該電 ，電路區段之㈣中’形成一銲塾電極作為該電子電路 區段。 如請求項8之用於製造該半導體裝置之方法， 其中在於該第一半導體晶片之-表面上至少形成該電 子電路區段之步驟中’形成固態成像區段作為該電子 電路區段。 如請求項8之用於製造該半導體裝置之方法， 其中在女裝该第二半導體晶片之步驟中，以相鄰於該 電f電路區段之方式安裝該第二半導體晶片。 如請求項8之用於製造該半導體裝置之方法， 中在形成該場之步驟中，該壤係沿著該第二半導體 晶片之該外緣之—形狀而形成。 如請求項8之用於製造該半導體|置之方法， 153590.doc 201201343 其中在形成該側填滿樹脂層之步驟中，該側填滿樹脂 層係藉由將一樹脂膜疊層至形成該第二半導體晶片之該 第二連接區段之表面之一側且將該第二半導體晶片安裝 至該第一半導體晶片上而形成。 16· —種電子裝置，其包括： 一固態成像裝置； 一光學系統，其用於引導入射光至該固態成像裝置之 一成像區段；及 一信號處理電路，其用於處理該固態成像裝置之一輸 出信號； 其中該固態成像裝置包含： 一第一半導體晶片，其具有至少形成於該第一半導 體晶片之一表面上的一固態成像區段，且具有形成於 與形成該固態成像區段之該表面相同之一表面上的一 第一連接區段； 第一半導體明片，其具有形成於該第二半導體晶 片之一表面上的一第二連接區段，且以凸塊使該第一 連接區段與該第二連接區段彼此連接，藉此將該第二 半導體晶片安裝於該第一半導體晶片上； 一壩，其經形成以填充於該第二半導體晶片之一外 緣之至少一部分中的該第一半導體晶片與該第二半導 體晶片之間的-㈣，該第二半導體晶片之該外緣之 該部分係在形成該固態成像區段之-區域之一側上；及 -側填滿樹脂層，其填入該第一半導體晶片與該第 153590.doc 201201343 二半導體晶片之間的該間隙中，藉由該壩防止該側填 滿樹脂層自該第二半導體晶片之該外緣向該固態成像 區段之一側突出。 153590.doc
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US20170287968A1 (en) 2017-10-05
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US10026770B2 (en) 2018-07-17
KR20180029209A (ko) 2018-03-20
US8773583B2 (en) 2014-07-08
US20160163756A1 (en) 2016-06-09
CN102244068A (zh) 2011-11-16
US9275922B2 (en) 2016-03-01
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US20110279717A1 (en) 2011-11-17
CN102244068B (zh) 2015-07-22

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