TW201140972A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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Publication number
TW201140972A
TW201140972A TW100102613A TW100102613A TW201140972A TW 201140972 A TW201140972 A TW 201140972A TW 100102613 A TW100102613 A TW 100102613A TW 100102613 A TW100102613 A TW 100102613A TW 201140972 A TW201140972 A TW 201140972A
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor
solder
electrode
melting point
Prior art date
Application number
TW100102613A
Other languages
English (en)
Chinese (zh)
Inventor
Harumi Nishiguchi
Misao Hironaka
Kyosuke Kuramoto
Masatsugu Kusunoki
Yosuke Suzuki
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW201140972A publication Critical patent/TW201140972A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07355—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H10W72/3528—Intermetallic compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW100102613A 2010-04-07 2011-01-25 Semiconductor device and method for manufacturing the same TW201140972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010088912A JP2011222675A (ja) 2010-04-07 2010-04-07 半導体装置及びその製造方法

Publications (1)

Publication Number Publication Date
TW201140972A true TW201140972A (en) 2011-11-16

Family

ID=44746072

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100102613A TW201140972A (en) 2010-04-07 2011-01-25 Semiconductor device and method for manufacturing the same

Country Status (4)

Country Link
US (1) US8625646B2 (cg-RX-API-DMAC7.html)
JP (1) JP2011222675A (cg-RX-API-DMAC7.html)
CN (1) CN102214895A (cg-RX-API-DMAC7.html)
TW (1) TW201140972A (cg-RX-API-DMAC7.html)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011055891B9 (de) 2011-11-30 2017-09-14 Osram Opto Semiconductors Gmbh Halbleiterlaserdiode
US9088135B1 (en) * 2012-06-29 2015-07-21 Soraa Laser Diode, Inc. Narrow sized laser diode
JP6107680B2 (ja) * 2014-01-22 2017-04-05 豊田合成株式会社 発光装置およびその製造方法
CN104104009B (zh) * 2014-07-08 2017-12-01 北京工业大学 一种p型金属电极制备焊料的半导体激光器
WO2016097780A1 (en) * 2014-12-19 2016-06-23 Alpes Lasers Sa Quantum cascade laser optimized for epitaxial side-down mounting
US10044171B2 (en) * 2015-01-27 2018-08-07 TeraDiode, Inc. Solder-creep management in high-power laser devices
US9843164B2 (en) * 2015-01-27 2017-12-12 TeraDiode, Inc. Solder sealing in high-power laser devices
JP6672721B2 (ja) * 2015-11-09 2020-03-25 三菱電機株式会社 半導体レーザーおよびその製造方法
JP6928440B2 (ja) * 2016-11-24 2021-09-01 浜松ホトニクス株式会社 半導体レーザ装置
CN108551077A (zh) * 2018-03-08 2018-09-18 深圳瑞波光电子有限公司 一种半导体激光器件及其制作方法
JP6512375B1 (ja) * 2018-04-03 2019-05-15 三菱電機株式会社 半導体装置の製造方法
JP7135482B2 (ja) * 2018-06-15 2022-09-13 ウシオ電機株式会社 半導体発光装置
WO2020174949A1 (ja) 2019-02-26 2020-09-03 パナソニックセミコンダクターソリューションズ株式会社 半導体レーザ装置及び半導体レーザ素子
JP7324665B2 (ja) * 2019-09-13 2023-08-10 シチズンファインデバイス株式会社 サブマウント
WO2021111536A1 (ja) 2019-12-04 2021-06-10 三菱電機株式会社 半導体レーザ素子およびその製造方法、半導体レーザ装置
JP7452233B2 (ja) * 2020-05-01 2024-03-19 株式会社デンソー 半導体装置および電力変換装置
WO2022030127A1 (ja) * 2020-08-04 2022-02-10 パナソニック株式会社 半導体発光装置
US11610861B2 (en) * 2020-09-14 2023-03-21 Infineon Technologies Austria Ag Diffusion soldering with contaminant protection
CN112332217B (zh) * 2020-11-04 2022-06-03 苏州长光华芯光电技术股份有限公司 一种半导体激光器芯片及制造方法
DE102020132133A1 (de) * 2020-12-03 2022-06-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes laserbauteil und verfahren zur herstellung eines strahlungsemittierenden laserbauteils
JP7898891B2 (ja) * 2022-03-25 2026-08-03 ヌヴォトンテクノロジージャパン株式会社 半導体発光装置、及び、半導体発光装置の製造方法
JPWO2024034482A1 (cg-RX-API-DMAC7.html) * 2022-08-10 2024-02-15
US20240154384A1 (en) * 2022-11-08 2024-05-09 Globalfoundries U.S. Inc. Cavity-mounted chips with multiple adhesives

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59121989A (ja) 1982-12-28 1984-07-14 Nec Corp 半導体レ−ザ
JPS60239086A (ja) 1985-04-25 1985-11-27 Hitachi Ltd 半導体レーザ装置
JPH02253690A (ja) 1989-03-27 1990-10-12 Mitsubishi Electric Corp 半導体装置の製造方法
JPH03217065A (ja) 1990-01-23 1991-09-24 Toshiba Corp レーザダイオード装置
JPH04315486A (ja) 1991-04-15 1992-11-06 Hitachi Ltd 光電子装置およびその製造方法
JPH0567847A (ja) * 1991-09-05 1993-03-19 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JPH05110203A (ja) 1991-10-15 1993-04-30 Mitsubishi Electric Corp 半導体レーザ装置およびその製造方法
JPH0637403A (ja) 1992-07-14 1994-02-10 Mitsubishi Electric Corp 半導体レーザ装置
JPH06260723A (ja) * 1993-03-03 1994-09-16 Mitsubishi Electric Corp 半導体レーザ装置
JPH06350202A (ja) 1993-06-10 1994-12-22 Toshiba Corp 半導体発光装置
JPH0738208A (ja) 1993-07-22 1995-02-07 Nec Corp 半導体レーザ装置
JPH08125270A (ja) * 1994-10-28 1996-05-17 Nippondenso Co Ltd 積層型半導体レーザ
JPH11284098A (ja) 1998-03-31 1999-10-15 Sharp Corp 半導体レーザ装置
JP2000004064A (ja) 1998-06-16 2000-01-07 Rohm Co Ltd 半導体レーザ装置およびその製造方法
JP2000124540A (ja) * 1998-10-16 2000-04-28 Fuji Photo Film Co Ltd 半導体発光素子
JP3779218B2 (ja) 2002-02-18 2006-05-24 住友電気工業株式会社 サブマウントおよび半導体装置
JP4088867B2 (ja) * 2002-05-01 2008-05-21 株式会社リコー 半導体発光素子の固着方法
JP2004071899A (ja) 2002-08-07 2004-03-04 Sanyo Electric Co Ltd 回路装置およびその製造方法
JP2004087866A (ja) * 2002-08-28 2004-03-18 Hitachi Ltd 半導体光素子、その実装体および光モジュール
JP2004140141A (ja) * 2002-10-17 2004-05-13 Mitsubishi Electric Corp 半導体レーザ
US7045827B2 (en) * 2004-06-24 2006-05-16 Gallup Kendra J Lids for wafer-scale optoelectronic packages
US7564887B2 (en) * 2004-06-30 2009-07-21 Finisar Corporation Long wavelength vertical cavity surface emitting lasers
JP2007027572A (ja) * 2005-07-20 2007-02-01 Sony Corp 半導体発光装置およびその製造方法
JP2007103804A (ja) 2005-10-06 2007-04-19 Matsushita Electric Ind Co Ltd 半導体レーザ装置
JP2007103840A (ja) * 2005-10-07 2007-04-19 Nec Electronics Corp 電子回路装置の製造方法
JP2008053564A (ja) * 2006-08-25 2008-03-06 Matsushita Electric Ind Co Ltd 光半導体装置およびその製造方法
JP2008085272A (ja) * 2006-09-29 2008-04-10 Sanyo Electric Co Ltd サブマウント、および、これを用いた半導体装置
US20080237814A1 (en) 2007-03-26 2008-10-02 National Semiconductor Corporation Isolated solder pads

Also Published As

Publication number Publication date
JP2011222675A (ja) 2011-11-04
US20110249694A1 (en) 2011-10-13
CN102214895A (zh) 2011-10-12
US8625646B2 (en) 2014-01-07

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