TW201138139A - Process for production of semiconductor light-emitting element substrate - Google Patents

Process for production of semiconductor light-emitting element substrate Download PDF

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Publication number
TW201138139A
TW201138139A TW099115220A TW99115220A TW201138139A TW 201138139 A TW201138139 A TW 201138139A TW 099115220 A TW099115220 A TW 099115220A TW 99115220 A TW99115220 A TW 99115220A TW 201138139 A TW201138139 A TW 201138139A
Authority
TW
Taiwan
Prior art keywords
substrate
cooling
layer
semiconductor light
vacuum chamber
Prior art date
Application number
TW099115220A
Other languages
English (en)
Chinese (zh)
Other versions
TWI355093B (https=
Inventor
Shigeharu Matsumoto
Takahiko Tachibana
Original Assignee
Shincron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shincron Co Ltd filed Critical Shincron Co Ltd
Publication of TW201138139A publication Critical patent/TW201138139A/zh
Application granted granted Critical
Publication of TWI355093B publication Critical patent/TWI355093B/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
    • G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
    • G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW099115220A 2010-04-27 2010-05-13 Process for production of semiconductor light-emitting element substrate TW201138139A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/057435 WO2011135667A1 (ja) 2010-04-27 2010-04-27 半導体発光素子基板の製造方法

Publications (2)

Publication Number Publication Date
TW201138139A true TW201138139A (en) 2011-11-01
TWI355093B TWI355093B (https=) 2011-12-21

Family

ID=44193868

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099115220A TW201138139A (en) 2010-04-27 2010-05-13 Process for production of semiconductor light-emitting element substrate

Country Status (5)

Country Link
JP (1) JP4684372B1 (https=)
KR (1) KR101087821B1 (https=)
CN (1) CN102439195B (https=)
TW (1) TW201138139A (https=)
WO (1) WO2011135667A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013073096A1 (ja) * 2011-11-15 2013-05-23 パナソニック株式会社 真空装置、真空中の熱源を冷却する方法及び薄膜製造方法
WO2013099064A1 (ja) * 2011-12-28 2013-07-04 キヤノンアネルバ株式会社 真空処理装置
US9869013B2 (en) * 2014-04-25 2018-01-16 Applied Materials, Inc. Ion assisted deposition top coat of rare-earth oxide
WO2017070488A1 (en) * 2015-10-22 2017-04-27 Richard Devito Deposition system with integrated cooling on a rotating drum
US12057297B2 (en) 2015-10-22 2024-08-06 Richard DeVito Deposition system with integrated cooling on a rotating drum
JP6524904B2 (ja) 2015-12-22 2019-06-05 日亜化学工業株式会社 発光装置
JP6588418B2 (ja) 2016-12-07 2019-10-09 株式会社神戸製鋼所 成膜装置およびそれを用いた成膜物の製造方法、ならびに冷却パネル
JP2020007587A (ja) * 2018-07-04 2020-01-16 株式会社アルバック 蒸着装置、および、蒸着方法
JP7316877B2 (ja) * 2019-08-19 2023-07-28 株式会社オプトラン 真空プロセス装置および真空プロセス装置におけるプロセス対象物の冷却方法
WO2021188754A1 (en) * 2020-03-18 2021-09-23 Richard Devito Deposition system with integrated cooling on a rotating drum
JP2022021080A (ja) * 2020-07-21 2022-02-02 株式会社アルバック 真空成膜装置用の部品及び真空成膜装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06347620A (ja) * 1993-06-11 1994-12-22 Canon Inc レプリカミラーの製造方法および製造用型
JP3787410B2 (ja) * 1997-05-13 2006-06-21 キヤノン株式会社 堆積膜製造方法及び光起電力素子の製造方法
JPH11149005A (ja) * 1997-11-14 1999-06-02 Canon Inc 内面反射ミラーおよびその製造方法
JP4545504B2 (ja) * 2004-07-15 2010-09-15 株式会社半導体エネルギー研究所 膜形成方法、発光装置の作製方法
JP4780983B2 (ja) * 2005-03-17 2011-09-28 株式会社アルバック 有機ｅｌ素子製造方法
JP4873455B2 (ja) * 2006-03-16 2012-02-08 株式会社シンクロン 光学薄膜形成方法および装置
JP4597149B2 (ja) * 2007-01-26 2010-12-15 株式会社シンクロン 薄膜形成装置及び薄膜形成方法
JP2009013435A (ja) * 2007-06-29 2009-01-22 Fujifilm Corp 基板ホルダ及び真空成膜装置
JP4941197B2 (ja) * 2007-09-25 2012-05-30 三菱電機株式会社 半導体デバイスの成膜用ホルダ及び成膜用装置
CN101197417B (zh) * 2008-01-07 2010-09-15 普光科技（广州）有限公司 氮化镓基发光二极管芯片及其制作方法

Also Published As

Publication number Publication date
WO2011135667A1 (ja) 2011-11-03
JPWO2011135667A1 (ja) 2013-07-18
JP4684372B1 (ja) 2011-05-18
HK1168392A1 (en) 2012-12-28
KR101087821B1 (ko) 2011-11-30
KR20110125629A (ko) 2011-11-21
TWI355093B (https=) 2011-12-21
CN102439195A (zh) 2012-05-02
CN102439195B (zh) 2014-09-03

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