HK1168392A1 - Process for production of semiconductor light-emitting element substrate - Google Patents
Process for production of semiconductor light-emitting element substrateInfo
- Publication number
- HK1168392A1 HK1168392A1 HK12109087.1A HK12109087A HK1168392A1 HK 1168392 A1 HK1168392 A1 HK 1168392A1 HK 12109087 A HK12109087 A HK 12109087A HK 1168392 A1 HK1168392 A1 HK 1168392A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- production
- emitting element
- semiconductor light
- element substrate
- substrate
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/057435 WO2011135667A1 (en) | 2010-04-27 | 2010-04-27 | Process for production of semiconductor light-emitting element substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1168392A1 true HK1168392A1 (en) | 2012-12-28 |
Family
ID=44193868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK12109087.1A HK1168392A1 (en) | 2010-04-27 | 2012-09-17 | Process for production of semiconductor light-emitting element substrate |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP4684372B1 (en) |
KR (1) | KR101087821B1 (en) |
CN (1) | CN102439195B (en) |
HK (1) | HK1168392A1 (en) |
TW (1) | TW201138139A (en) |
WO (1) | WO2011135667A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013073096A1 (en) * | 2011-11-15 | 2013-05-23 | パナソニック株式会社 | Vacuum apparatus, method for cooling heat source in vacuum, and thin film thin film manufacturing method |
JP5815743B2 (en) * | 2011-12-28 | 2015-11-17 | キヤノンアネルバ株式会社 | Vacuum processing equipment |
US9869013B2 (en) | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
WO2017070488A1 (en) * | 2015-10-22 | 2017-04-27 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
JP6524904B2 (en) | 2015-12-22 | 2019-06-05 | 日亜化学工業株式会社 | Light emitting device |
JP6588418B2 (en) * | 2016-12-07 | 2019-10-09 | 株式会社神戸製鋼所 | Process for producing a film forming apparatus and a film forming material using the same and cooling panel, |
JP2020007587A (en) * | 2018-07-04 | 2020-01-16 | 株式会社アルバック | Vapor deposition apparatus and vapor deposition method |
JP7316877B2 (en) * | 2019-08-19 | 2023-07-28 | 株式会社オプトラン | Vacuum process equipment and method for cooling process object in vacuum process equipment |
WO2021188754A1 (en) * | 2020-03-18 | 2021-09-23 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06347620A (en) * | 1993-06-11 | 1994-12-22 | Canon Inc | Production of replica mirror and mold for production |
JP3787410B2 (en) * | 1997-05-13 | 2006-06-21 | キヤノン株式会社 | Deposited film manufacturing method and photovoltaic device manufacturing method |
JPH11149005A (en) * | 1997-11-14 | 1999-06-02 | Canon Inc | Inside surface reflection mirror and its production |
JP4545504B2 (en) * | 2004-07-15 | 2010-09-15 | 株式会社半導体エネルギー研究所 | Film forming method and light emitting device manufacturing method |
JP4780983B2 (en) * | 2005-03-17 | 2011-09-28 | 株式会社アルバック | Organic EL device manufacturing method |
JP4873455B2 (en) * | 2006-03-16 | 2012-02-08 | 株式会社シンクロン | Optical thin film forming method and apparatus |
JP4597149B2 (en) * | 2007-01-26 | 2010-12-15 | 株式会社シンクロン | Thin film forming apparatus and thin film forming method |
JP2009013435A (en) * | 2007-06-29 | 2009-01-22 | Fujifilm Corp | Substrate holder and vacuum film deposition apparatus |
JP4941197B2 (en) * | 2007-09-25 | 2012-05-30 | 三菱電機株式会社 | Semiconductor device deposition holder and deposition apparatus |
CN101197417B (en) * | 2008-01-07 | 2010-09-15 | 普光科技(广州)有限公司 | Gallium nitride based light emitting diode chip and production method thereof |
-
2010
- 2010-04-27 WO PCT/JP2010/057435 patent/WO2011135667A1/en active Application Filing
- 2010-04-27 JP JP2010535564A patent/JP4684372B1/en active Active
- 2010-04-27 CN CN201080002384.0A patent/CN102439195B/en active Active
- 2010-04-27 KR KR1020117003108A patent/KR101087821B1/en active IP Right Grant
- 2010-05-13 TW TW099115220A patent/TW201138139A/en unknown
-
2012
- 2012-09-17 HK HK12109087.1A patent/HK1168392A1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI355093B (en) | 2011-12-21 |
KR20110125629A (en) | 2011-11-21 |
CN102439195B (en) | 2014-09-03 |
KR101087821B1 (en) | 2011-11-30 |
CN102439195A (en) | 2012-05-02 |
JPWO2011135667A1 (en) | 2013-07-18 |
JP4684372B1 (en) | 2011-05-18 |
TW201138139A (en) | 2011-11-01 |
WO2011135667A1 (en) | 2011-11-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20180427 |