TWI355093B - - Google Patents

Description

1. Technical Field of the Invention The present invention relates to a method of manufacturing a semiconductor light-emitting device substrate, and more particularly to a method for manufacturing a semiconductor light-emitting device substrate capable of shortening manufacturing time and high performance. [Prior Art] Semiconductor light-emitting Since the element (LED) has low power consumption and long service life, and has high luminous efficiency, it has been progressing as a light source. Further, in the field of semiconductor light-emitting elements, GaN, GaAlN, InGaN, etc.

GaN-based compound semiconductors have been widely used in visible light-emitting devices or high-temperature operation electronic devices.

In the production of a GaN-based compound semiconductor, in order to grow a semiconductor film on the surface of a substrate, a sapphire substrate is generally used as a crystal substrate. Since the sapphire substrate is insulative, the substrate surface of the light-emitting layer made of the GaN-based compound is not provided with an electrode on the surface on the back side of the sapphire substrate, and the p-electrode and the n-electrode are provided on the same surface as the light-emitting layer. . More specifically, a buffer layer, an n-type GaN-based compound layer, a GaN-based light-emitting layer, and a p-type GaN-based compound layer are sequentially laminated on a sapphire substrate, and a p-electrode is provided thereon. Further, a part of the n-type GaN-based compound layer is generally exposed by etching, and an n-type electrode is provided. Therefore, an n-type GaN-based compound layer, a GaN-based light-emitting layer, and a p-type GaN-based compound layer are sequentially laminated on a sapphire substrate, and a p-electrode and an n-electrode are provided on the same surface as each of the layers to form a semiconductor. Light-emitting element. 3 丄 π: Η) 93 When the above-described constituent semiconductor light-emitting elements are assembled to various elements, the method of structuring is largely divided into two types: face-up configuration and face-down configuration. The method of arranging the surface upwards to arrange the substrate on the element side with the surface on which the electrode is formed is a configuration in which light is extracted from the electrode side. On the other hand, the so-called face-down configuration is formed. The method in which the surface of the electrode is disposed below the electrode on the element side is configured to extract light from the substrate side. In the case of the face-up configuration, the light-emitting efficiency can be improved by forming a reflective layer on the surface of the semiconductor light-emitting device opposite to the surface on which the layers and the electrodes on the sapphire substrate are formed. As the material for the reflective layer, aluminum (A1), silver (Ag), or the like having a reflectance lower than that in the emission wavelength range (about 45 Å to 47 Å) of the blue LED is used. Further, it is known that the reflection efficiency of the blue light-emitting range of the blue LED is about 92% at A1 and about 95% at Ag. Further, by providing a plurality of dielectric layers as the antireflection film between the sapphire substrate and the reflective layer made of the above metal, a higher reflectance can be obtained. The dielectric layer is formed by a dielectric layer composed of a substance having a high refractive index and a dielectric layer (L) composed of a substance having a low refractive index, and is formed into an optical film having a wavelength of 460 nm (A)/4, respectively. thick. The configuration of the above-described semiconductor light-emitting device substrate having a dielectric layer having a different refractive index can be simply expressed as the following Formula 1 or Formula 2. Sapphire substrate / aL (HL) b / Al (or Ag) (Formula 1) Sapphire substrate / cH (LH) bL / Al (or Ag) ... (Formula 2) In addition, at this time a, b, c, d is an integer. Then, in the semiconductor light-emitting device substrate having the configuration shown in the above formula 1 or formula 2, Ti 2 , Ta 2 〇 5, ΝΙ > 2 〇 5 or the like is used as the material of the high refractive index dielectric layer (并) and SiCb is used. Or the material β of the low refractive index dielectric layer (L) 1355093 when ή〇2 is used as the material of the high refractive index dielectric layer (Η), and 〇2 is used as the material of the low refractive index dielectric layer (L) The calculation results of the optical characteristics are shown in Fig. 7. As shown in Fig. 7, the high refractive index dielectric layer (8): the low refractive index dielectric layer (L), when the more b, d, the higher the reflectivity can be obtained, because the b, d is The multi-time program time also becomes longer, and the heat transfer to the luminescent layer is deteriorated, so 2 &lt; b < 4 is suitable.

When the above dielectric layer is formed on a sapphire substrate, a vacuum distillation method is generally used. X. A method of steaming ore is known as ion assisted deionation (ion assisted dep〇siti〇n), which is used to evaporate the dielectric material toward the surface of the substrate in a vacuum chamber. The ions are irradiated onto the vapor deposition layer which is deposited on the substrate to be densified. In this steaming method, a lower energy ion beam (gas ion) is irradiated onto a substrate by an ion source, and the substrate is irradiated by a Neutralizer neutralizer. The ion beam: a charge accumulated on the plate', and a fine optical film is produced by the kinetic energy of the ion beam (for example, Patent Document 1). Further, it is possible to prevent crystallization of the formed dielectric layer, and In the technique described in Patent Document 1, when the dielectric layer is formed, the evaporation source becomes a high temperature of ❾2_. Further, it is used to irradiate ions. The ion source of the beam, the ion source itself is high temperature and the substrate is heated by the irradiation of ions. The substrate temperature at this time depends on the material of the dielectric layer, the thickness of the film formed, etc., but the substrate temperature is heated to 1 〇〇 or more. 5 1355093 As a result, the substrate temperature is heated by the radiant heat of the evaporation source or the ion source, and the substrate temperature is high after the formation of the dielectric layer. However, the formation of the dielectric layer is performed by A1. In the case of a reflective layer made of Ag or the like, in order to obtain good optical characteristics, it is necessary to cool the substrate temperature to 5 〇〇 c or less to form a film. Therefore, the semiconductor light-emitting device substrate is manufactured to form a plurality of dielectric layers on the back surface of the sapphire substrate. The body layer and the reflective layer of A1 and the like must be provided with a cooling time to cool the substrate, resulting in a problem that requires a long time to manufacture. As a technique for preventing such a temperature rise of the substrate, Patent Document 2 has proposed a cooling chamber to be cooled. In the technique of the cooling surface of the substrate, the substrate is cooled by the cooling surface provided on the side opposite to the evaporation source with respect to the substrate. [Patent Document 1] JP-A-2007-248828 [Patent Document 2] Japanese Laid-Open Patent Publication No. 2008-184628. SUMMARY OF THE INVENTION However, the technique disclosed in Patent Document 2 is directed to a substrate (heat deformation temperature of a plastic or the like by vacuum evaporation). Low material composition) The technology of film formation into the film does not describe the technology for manufacturing semiconductor optical components. More specifically, it does not describe the formation of high performance. A technique of a reflective layer is desired. Therefore, a method of manufacturing a semiconductor light-emitting device substrate having a high reflectance and high performance of a reflective layer using the technique disclosed in Patent Document 2 is desired. The object of the present invention is to a semiconductor light-emitting device substrate. In the manufacturing method, there is provided a method for manufacturing a semiconductor light-emitting device with a high-performance semiconductor light-emitting substrate. 1355093 Another object of the present invention is to provide a semiconductor which can reduce the manufacturing cost of a semiconductor light-emitting device substrate and has a low manufacturing cost. The method of manufacturing a light-emitting device substrate can be solved by the method for manufacturing a semiconductor light-emitting device substrate according to the present invention, that is, a method for mounting a semiconductor light-emitting device substrate, the semiconductor light-emitting device substrate is attached to the surface A dielectric layer and a reflective layer each having at least two or more layers having different refractive indices on the substrate are provided in sequence, and the substrate holding step is sequentially provided to hold the substrate in a substrate disposed in the vacuum chamber. Holding means; vacuum exhausting step, discharging the aforementioned a gas in the empty chamber; a substrate heating step 'to substantially simultaneously with the vacuum evacuation step to heat the substrate; a substrate cleaning step 'to irradiate the substrate with ions to wash the substrate; and a dielectric layer forming step' The electric layer is vaporized on the substrate; the substrate is heated to stop, and the heating of the substrate is stopped; and the cooling step is absorbed by the cooling means disposed at a position adjacent to the substrate and not in contact with the substrate. The radiant heat of the substrate and the substrate holding means is started to start the substrate and the above; A, ^ 丞 plate keeps the hand slave cooling; and the reflective layer forming step, and the reflective layer is deposited on the dielectric layer. In the known method, the substrate is placed in a vacuum to be vacuum insulated, and as a result, the substrate is cooled for a long time. Further, the dielectric layer formation step is heated by the evaporation source and the ion source, and since the substrate is subjected to its light heat, the cooling efficiency is extremely low. According to the above problem, the semiconductor light-emitting device substrate mounting method of the present invention can be effectively cooled by absorbing the radiant heat from the substrate by a cooling means. 15] LL , , 1 Therefore 'after the formation of a plurality of dielectric layers, even if the temperature of the base 7 1 ^ 55093 plate rises 'by the cold part of the radiant heat of the substrate The cooling time of the substrate can be shortened, and the manufacturing time can be shortened. Further, the above problem can be solved by the following method for manufacturing a semiconductor light-emitting device according to the present invention, which is a semiconductor light-emitting device substrate. In the method of manufacturing a semiconductor light-emitting device substrate, a dielectric layer and a reflective layer composed of at least two layers having different refractive indices on a substrate are sequentially provided on one surface, and are characterized by a substrate holding step of holding the substrate in a substrate holding means disposed in the vacuum chamber; a vacuum exhausting step of discharging the gas in the vacuum chamber; and a substrate heating step substantially simultaneously with the vacuum evacuating step for heating The substrate; the cooling step 'absorbs from the substrate and the predecessor by means of a cooling means disposed at a position in the vicinity of the substrate and not in contact with the substrate The radiant heat of the plate holding means is used to start the cooling of the substrate and the substrate holding means; the substrate cleaning step irradiates the substrate with ions to wash the substrate; the dielectric layer forming step, the dielectric layer is evaporated on the substrate a substrate heating stop step to stop heating of the substrate; and a reflective layer forming step of depositing the reflective layer on the dielectric layer. As described above, the present invention provides a dielectric layer forming step, and further Before the substrate cleaning step, a step of absorbing the radiant heat from the substrate and the substrate holding means by the cooling means to cool the substrate and the substrate holding means is provided. Therefore, the substrate temperature does not rise during the substrate cleaning or the dielectric layer formation. High, the cooling time until the start of the reflective layer forming step can be further shortened, and the manufacturing efficiency can be further improved. Further, since the substrate is cooled in the step of forming a plurality of dielectric layers one after another, a good film quality dielectric can be formed. Body layer 1355093 is best to determine the vacuum before the substrate cleaning step Whether the indoor is lxl (the first step below r3pa - the judging step; when the vacuum chamber is below lX10-3Pa, the substrate cleaning step is performed. As described above, the first judging step is set before the substrate cleaning step, when the real work is completed When the inside is 1×10 Pa or less, the substrate cleaning step is performed, and after the substrate cleaning step is continued, the formation of the dielectric layer is started, thereby forming a dielectric layer capable of forming a good film quality. As a result, it can be combined with the reflective layer. On the other hand, when the pressure in the vacuum chamber when the dielectric layer is formed is higher than lxl〇-3Pa, it is difficult to obtain a good dielectric layer of the dielectric layer, and it is difficult to obtain high reflection when combined with the reflective layer. Further preferably, the method further includes the second determining step of determining whether the temperature of the substrate is 5 〇 or less and the vacuum chamber is 3×1 G.4 Pa or less before the step of forming the reflective layer; When the temperature of the substrate is 50° C. or less and the vacuum chamber is 3×10 −4 Pa or less, the reflective layer forming step is performed. As described above, the second judging step is provided before the step of forming the reflective layer, and the step of forming the reflective layer is performed only when the temperature of the substrate is 5 〇t or less and the vacuum chamber is 3×10 −4 Pa or less. Reflective layer with high reflectivity. On the other hand, when the temperature of the substrate is higher than 50 t or the pressure in the vacuum chamber when the reflective layer is formed is higher than 3 x 1 〇 - 4 Pa, the reflectance of the reflective layer becomes low, and it is difficult to obtain a good reflective layer. Further, the reflective layer is preferably formed by vapor deposition of aluminum. High reflectance can be obtained by using aluminum having a high reflectance as a material of the reflective layer. Further, it is possible to form a reflective layer having high adhesion to each dielectric layer. 9 1355093 Further, it is preferable that the dielectric layer is formed by alternately combining a layer having a high refractive index and a layer having a low refractive index. By using a high-intensity dielectric Zhao and a low-refractive-index tantalum as a dielectric material, and by alternately steaming, a higher reflectance can be obtained when combined with the reflective layer. Moreover, in a preferred embodiment, the second determining step is a vacuum control connected to the vacuum chamber via a vacuum valve, a pressure control device connected to the vacuum fruit, and a thermometer and connection disposed in the vicinity of the substrate. The temperature control means of the cooling means is performed; and the reflecting layer forming step is performed by opening control of the shutter disposed on the evaporation source by the force control means and the temperature control hand = closed control means . As described above, the dust force control means monitors the force in the vacuum chamber and opens and closes the vacuum valve to control the wish force in the vacuum chamber, thereby constituting the workability and improving the manufacturing efficiency β. Further, by temperature control The means monitors the substrate temperature and the cooling means = the cooling force (four)', whereby the workability is improved and the manufacturing efficiency is improved. 'Inward pressure and substrate temperature by the age of each control means: When the conditions are below the established conditions respectively, the door is controlled by the connection of pressure and degree: „ k ^ 77 ^ /jn- plus lifting operation By means of the effect m, the shutter is opened, whereby the semiconductor light-emitting element substrate can be manufactured under the conditions of uniformity without causing the operator to misidentify the respective conditions. The manufacturer of the semiconductor light-emitting device substrate of the first patent range is shortened by j355〇93 when the substrate is cooled before the film formation of the reflective layer is started, so that the manufacturing efficiency can be improved. Further, by providing pressure conditions and temperature conditions suitable for film formation of the reflective layer and the dielectric layer, it is possible to provide a semiconductor light-emitting device substrate having a high refractive index. n According to the method for manufacturing a semiconductor light-emitting device substrate according to the second aspect of the patent application, since the cold portion of the substrate is performed both at the time of cleaning the substrate or when the dielectric layer is formed, it is possible to further shorten the substrate before the film formation of the reflective layer is started. Time. Further, by providing pressure conditions and temperature conditions suitable for film formation of the reflective layer and the dielectric layer, it is possible to provide a semiconductor wafer substrate having high reflectance. According to the method of manufacturing a semiconductor light-emitting device substrate of the third aspect of the patent application, a dielectric layer of a good film quality can be formed. According to the method for producing a semiconductor light-emitting device substrate of the fourth aspect of the patent application, a reflective layer of a good film quality can be formed. According to the method for producing a semiconductor light-emitting device substrate according to the fifth aspect of the patent application, a reflective layer having a higher reflectance can be formed by using aluminum as a material for forming a reflective layer. w

According to the method for producing a semiconductor light-emitting device substrate of the sixth application of the patent application, the layer having a high refractive index and a layer having a low refractive index are alternately combined in each layer of the dielectric layer, whereby the reflectance can be further improved. According to the method for manufacturing a semiconductor light-emitting device substrate of the patent application No. 7, since it is not necessary for the operator to perform the monitoring and control of the pressure in the vacuum chamber and the control of the substrate temperature, the operation efficiency can be improved. Further, since the film formation of each layer is started without the operator's erroneously checking the pressure in the chamber and the substrate temperature, it is possible to manufacture a semiconductor light-emitting device substrate having a reflective layer and a dielectric layer of uniform quality. 11 1355093 [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Further, the present invention, the configuration, and the like are not limited to the present invention, and various changes can be made in accordance with the gist of the present invention. Fig. 1 is an explanatory view of an ion-assisted vapor deposition apparatus of a film forming apparatus, in which a part of the apparatus is worn. As shown in the figure, the ion assisted vapor deposition apparatus 丨 includes a vacuum chamber 2 as a main component, a substrate holder 3, a substrate holder rotating shaft 4, a base plate holder rotating motor 5, an evaporation source 6, and an ion source 7. The heating means 8, the refrigerator 11, the cold coal pipe 12, the cooling plate 13, and the vacuum chamber 2 are containers in which the film is formed. The second embodiment of the present embodiment is a hollow body having a substantially cylindrical shape, and the substrate s can be placed to form a film. The vacuum pump 33 is connected to the vacuum to the vacuum pump 33, and the inside of the vacuum chamber 2 can be made into a vacuum state of 丄乂ur2 to ixl (r5Pa in a vacuum state). A gas guide tube (not shown) for introducing a gas into the inside is formed. As a material of the vacuum chamber 2, a metal material such as aluminum or stainless steel can be used. In the present embodiment, SuS3 which is a type of stainless steel is used. The substrate holder 3 is provided inside the vacuum chamber 2 and is used to hold the member of the substrate s. The substrate holder 3 of the present embodiment is configured by a flat member, but may have a dome-shaped member having a predetermined curvature. Further, the substrate holder 3 corresponds to the substrate holding means of the present invention. The substrate holder 3 is formed with a through hole 3a penetrating from one plate surface to the other plate surface 12 1355093. The substrate s is for blocking the through hole 3a. The mounting member 3b of the present embodiment has a disk shape having a larger diameter than the through hole 3a of the substrate holder 3, and the disk surface is recessed downwardly in the shape of the substrate holder 3. An opening is formed in the P of the Pu. The substrate s is mounted on the substrate holder 3. First, the mounting member is placed on the through hole 3a of the substrate holder 3, and the substrate S is placed with the film forming surface facing downward. The substrate is placed in the recess of the mounting member. In this embodiment, H is simply placed on the substrate holder 3 to mount the mounting member 3b and the substrate s'. Further, in order to avoid the substrate S in the substrate holder 3 The rotation of the substrate is also fixed to the mounting member 3b. At the center of the substrate holder 3, one end side of the rod-shaped substrate holder rotating shaft 4 is connected in a direction perpendicular to the plate surface of the substrate holder 3. The other end side of the shaft 4 extends through the wall surface of the vacuum chamber 2 outside the vacuum chamber 2, and is connected to the output shaft of the substrate holder rotating motor. The substrate holder rotating motor 5 is used to hold the substrate holder. 3. Rotating device: The substrate holder rotating motor 5 is disposed outside the vacuum chamber 2. The output shaft of the substrate holder rotating motor 5 is aligned with the axis of the substrate holder rotating shaft 4, and the substrate holder has a rotating output system of the rotating stirrup 5 through The substrate holder red shaft 4 is transferred to the substrate holder 3 to rotate the substrate holder 3. Further, the wheel-out shaft of the substrate holder rotating motor 5 is vacuum-sealed by means of a magnetic seal bearing or the like (not shown). S is a member based on the surface to form each layer. In the present invention, it is preferable to use a sapphire substrate having a high versatility as the substrate s' of the semiconductor light-emitting layer 13 1355093, but it is also suitable for use as a semiconductor light-emitting device. In the present embodiment, the shape of the flat plate is used as the shape of the substrate s. However, the shape is not limited thereto, and a suitable shape may be used as the substrate on which the semiconductor light-emitting device substrate is formed. The source 6 is disposed on the lower side of the inside of the vacuum chamber 2, and evaporates the vapor deposition material P, that is, a high refractive index substance, a low refractive index substance, and a metal (Al, Ag, etc.) toward the substrate s. The evaporation source 6 is provided with an evaporation plate having a recess for placing the vapor deposition material P on the upper portion and an electron repulsion for irradiating the electron beam to the vapor deposition material p to evaporate it. Further, in the present embodiment, a shutter (not shown) that is rotatably provided is provided at a position where the vapor deposition material p from the evaporation plate toward the substrate S is cut off. Further, the shutter is appropriately opened and closed by a shutter control means (not shown). In the present embodiment, a vapor deposition device is used to use a general device to be used as the evaporation source 6. That is, a plurality of cylindrical furnaces (hearth Uner) are provided as the evaporation plates. These furnaces are disposed in concentric depressions of the disk-shaped furnace. The disk-shaped furnace is formed of a metal having high heat transfer property such as copper, and can be directly or indirectly cooled by a water-cooling device (not shown). When the vapor deposition material P' is stored in each of the furnace tubes, the vapor deposition material P in one of the furnaces disappears, and the disk-shaped furnace is rotated to evaporate the vapor deposition material P of the next furnace. Since the disk-shaped furnace itself is difficult to be a heat source by cooling with water, the vapor deposition material P remaining in the furnace is usually an oxide, and heat transfer property is low, so that it is difficult to cool. Therefore, the distilled mineral P on the drum becomes a heat source for heating the substrate s by radiant heat. In the state where the vaporized material P as a raw material of the film is placed on the evaporation plate, 1355093, an electron beam of about 1 kW is generated, and the deposited material is irradiated onto the vapor deposition material, and the plug material p is heated and evaporated. When the shutter is not opened in this state, the vaporized mineral P evaporated from the thermal plate moves toward the substrate s and moves inside the vacuum chamber 2 to adhere to the surface of the substrate s. In the film formation, the temperature of the evaporation source 6 rises to 1500 to 250 CTC. Further, in order to dissolve the vapor deposition material P, the evaporation source 6 is also preheated in a state where the shutter is closed except for the film formation, so that the temperature of the shutter or its surroundings also rises. The evaporation source 6 is not limited to the above-described apparatus for evaporating by electrons, and may be a device for dropping the vapor-powder substance p by, for example, impedance heating. In the semiconductor optical element formed in the present embodiment, a high refractive (four) quality and a low refractive (four) quality line are alternately laminated, and a reflective film Br is formed thereon (see FIG. 3). The number or configuration of the evaporation sources 6 is appropriately changed depending on the kind or number. The ion source 7 is a device for irradiating positive ions toward the substrate s, and extracts charged ions (〇2+, Ar+) from a plasma of a reactive gas (for example, 〇2) or a rare gas (for example, Ar). The accelerating voltage accelerates the injection. The vapor deposition material p which is moved from the evaporation source 6 toward the substrate s by the well-known device generally used in the vacuum distillation apparatus can be used as the ion source 7 ^, and the impact energy of the positive ions irradiated from the ion source 7 is applied to the substrate s. High fineness and solid adhesion to cattle. At this time, the substrate S is positively charged by the positive ions contained in the ion beam. Further, as needed, a positively neutralizing neutralizer for illuminating the positively charged substrate s or the substrate holder 3 with an electron beam may be provided. 15 1355093 In the present embodiment, each layer is formed by ion-cleaning the surface of the substrate s by ions released from the ion source and 7. In the present embodiment, a heating means is provided below the substrate holder 3. The heating means 8 is a heating source for heating the substrate s by radiant heat. Further, a known device such as a lamp or an infrared heater can be used as the heating means 8. Further, the amount of heat generated by the heating means 8 can be controlled by the temperature control means 24 based on the temperature measured by the thermometer 25 to be described later.压力 The pressure inside the private vacuum chamber 2 is measured and displayed by the pressure gauge 32, and the desired pressure can be controlled by the force control means 34. That is, the internal pressure measured by the pressure gauge 32 is monitored by the pressure control means 34 connected to the pressure gauge 32, and the vacuum valve connected to the waste force control means 34 is closed when the pressure is reduced from the predetermined house: π 'By this, the exhaust of the vacuum pump 33 is not performed. Further, a configuration of Μν (ηιίηί_ε, a small valve) (not shown) may be provided on the side of the vacuum chamber 2. On the other hand, in a state where the pressure is not reduced to the desired pressure, the vacuum valve 31 connected to the pressure control means 34 is opened to perform the evacuation of the vacuum pump. Thus, the pressure inside the vacuum chamber 2 is monitored by the pressure control means 34, and the pressure in the vacuum chamber 2 can be controlled to a predetermined value. Further, in the vacuum chamber 2, a portion in which the pressure gauge 32 is disposed is constituted by a vacuum seal. X, the fortune meter 32, the vacuum valve 31, and the vacuum pump 33 can all use a known device. Next, the cooling means of this embodiment will be described. The θ cooling means is a hand &amp; cooling means for cooling the substrate S to maintain its temperature at a proper level. The refrigerator 11 and the cold coal pipe 12 and the cooling plate 13 are main components. 16 1355093 - A cooling plate 13 is arranged inside the vacuum chamber 2. The cooling plate 丨3 is disposed in a disk-like shape along the upper surface of the substrate holder 3, that is, the cooling plate 13 is disposed on the side opposite to the side on which the evaporation source 6 is provided via the substrate holder 3. The cooling plate 13 is formed of a metal material or the like having high heat transfer properties such as copper or aluminum. Further, the cooling plate 13 may not be a complete plate shape in view of the temperature of the substrate holder 3 or the substrate s, the performance of the refrigerator 11, or the like, but may be a plate shape or a rectangular shape. Φ The center side of the vacuum chamber 2 in the cold plate 13, that is, the side on which the substrate s is disposed, constitutes the proximity cooling surface 13a of the present invention. Further, the cold coal pipe 12 abuts on the surface opposite to the near-cooling surface 13a. Therefore, by the cold coal flowing through the cold coal pipe 12, the surface of the cooling plate 13 which abuts against the cold coal pipe 12 is cooled, and the adjacent cooling surface 13a formed on the opposite side is also cooled. The cooling plate 13 is fixed in the vacuum chamber 2 using the mounting jig 17. A gap is formed between the cold plate 13 and the substrate holder rotating shaft 4, so that the substrate holder rotating shaft 4 can be smoothly rotated. Further, in order to prevent heat from flowing from the substrate φ holder rotating shaft 4 by heat transfer, a substance having a low heat transfer rate may be held in the substrate holder rotating shaft 4 it to thermally insulate it, or the substrate holder may be rotated. A cooling plate for cooling the shaft 4. Further, a bearing or the like may be provided between the wall surface of the cooling plate 13 and the outer peripheral surface of the substrate holder rotating shaft 4 to smoothly rotate the substrate holder rotating shaft 4, and heat is less likely to move along the substrate holder rotating shaft 4. The cold coal pipe 12 is constituted by a hollow tubular member inside, and has a function of cooling a cooling coil of a cooling plate 13 to be described later. One end of the cold coal pipe 12 is connected to the discharge port of the refrigerator 11, and the other end is connected to the inflow port and introduced into the inside of the vacuum chamber 2. Then, the cold coal is circulated in the freezer u by flowing the cold coal spouted from the cold; the east machine to the other end side from the side of the side 17 1355093. The cold coal officer 12 is wound so that the cold coal inflow side is the outer side and the delivery side is the inner side, and is abutted and fixed to the outer side plane of the disk-shaped cooling plate 3 . Further, the form of the fixed cold coal pipe 12 is not limited to the above-described swirl shape, and may be spiral, serpentine or the like. The refrigerator 11 is a device for cooling cold coal and supplying it to the cold coal pipe 丨 2 to circulate it. The refrigerator η of the present embodiment is a known refrigerating apparatus in which the cold coal pipe 12 is a cooling coil. Specifically, the refrigerator U includes a cold compressor 20 that compresses cold coal (gas cold coal), and a water condenser 22 that cools the cold coal from the compressor 2 by heat exchange with the cooling water. The heat exchanger 26 that is cooled by the compressed water-cooled cold coal is cooled, and the cold-phase electromagnetic valve 21 and the defrosting solenoid valve 23 provided on the discharge port side of the refrigerator η. An expansion valve (not shown) is provided inside the heat exchanger 26. Further, the cooled cold coal is caused to flow through the cold coal pipe 12 by the refrigerator 11, thereby cooling the cold coal pipe 12 as a cold coil. The cold coal in the cold coal pipe 12 partially evaporates due to an increase in temperature in the vacuum chamber 2, and becomes a high temperature &lt; gas φ body cold coal circulates in the refrigerator U. The gas cold coal is compressed by the compressor 2, and is again cooled by the water condenser 22 and the heat exchanger 26 to become low-temperature cold coal, and is again sent out from the discharge port to the cold coal pipe 12. The cold machine U is provided with an inflow port for the cold butterfly that has been circulated in the cold coal pipe 12. The high temperature gas cold coal flowing in from the inflow port is cooled again in the freezer. Further, by closing the cooling solenoid valve 21 and opening the defrosting solenoid valve U, the gas cold coal (hereinafter referred to as "heating 18 丄 355093 gas") compressed by the compressor 20 is directly flowed to the cold coal pipe 12 Instead of passing through the water condenser 22, the temperature of the cooling coil is rapidly increased to room temperature. A cooling solenoid valve 2 and a defrosting solenoid valve 23 are provided on the discharge port side of the refrigerator 11. Each of the electromagnetic cymbals 21, 23 has two chambers, and is a valve that can be switched by electromagnetic control. The cold portion solenoid valve 21 is provided in the middle of the line from the heat exchanger 26 to the cold coal pipe 12 for supplying cold coal. Further, the defrosting solenoid valve 23 is provided in the middle of the branch line which is connected to the line on the output side of the compressor 2G from the above-mentioned line. The cold machine η system has three modes. That is, the solenoid valves 21, 23 are all closed without supplying the cold coal pipe 12 with the "preparation mode" of the cold coal and the heating gas, and only the cooling solenoid valve 21 is opened. "", and only the "Thawing Mode" of the heating gas supplied by the former cold coal pipe 12 in the Kangkang Electromagnetic Room 23.

&quot; Before the start of cooling, the mode of the cold soil machine 11 is "preparation mode", the electromagnetic valve 21 of the A part, the solution, and the second electromagnetic valve 23 are all closed. 7 is 23 12 when cooling the cooling plate 13 by the cold machine η, cold; the mode of the east machine u = change type "opens the cooling solenoid valve 21 and closes the solution; beam::, cools to, for example, The cold coal flows by cooling the cold heading plate 13 to below -1 〇〇〇c. On the other hand, when the ion-assisted vapor deposition is required to make the temperature of the cooling plate 13 a generation;; 1 at atmospheric time '.±.., to the temperature level, gl I·!· 吏V; The mode becomes "unrolling mode", and the defrosting solenoid valve 23 is closed and opened. The temperature of the cooling plate η is raised by the 7 valve 21. The gas is supplied to the cold coal pipe u, and the thermometer 25 for measuring the temperature of the substrate s is placed close to the substrate 3 with 1355093. As the thermometer 25, a known temperature measuring means such as a thermocouple can be used. Also (10) degrees. ·}· 25 is connected to the temperature control means 24. The temperature control means 24 is also connected to the solenoid valve for controlling the cooling electromagnetic (five) 21 or the decoupling solenoid valve 23 of the cold beam machine u. The cooling temperature of the substrate S by the cooling plate 13 can be adjusted by appropriately changing the respective opening and closing states. By this, it is possible to change the supply electric power according to the film formation conditions at the time of film formation to keep the temperature constant. The refrigerator 11 can perform the "preparation mode", "cooling mode", and "solution; east mode" mode depending on the operating state of the device. The temperature of the cooling plate 13 can be measured by detecting the temperature of the cold coal returned to the cold machine 11 by a thermometer (not shown) provided in the refrigerator n. The cooling state of the "cooling mode" can be controlled according to the temperature of the cooling plate set in advance, and the operating state of the east machine can be controlled to control the temperature of the cooling plate 13. 7 Since the near-cooling surface is located close to the substrate S, the radiant heat from the substrate S and the substrate stock 3 is absorbed to cool it. That is, the heat radiated from the base having a high temperature; fe S or the substrate holder 3 is radiated by the heat radiated from the near-cooling surface 13a having a lower temperature, and thus is moved from the substrate S or the substrate holder 3 to the near cooling. The surface i3a is generated by cooling the substrate s or the substrate holder 3. With the above configuration, the cooling plate 13 can cool the substrate S from the upper side of the substrate holder 3. Therefore, the temperature rise of the substrate S can be suppressed, and the desired substrate temperature can be maintained at the time of film formation. Further, even if the substrate temperature rises during film formation, since the substrate S is cooled, the cooling time can be effectively shortened. Further, since the substrate s is placed on the ampoule member 3b and B is mounted on the substrate holder 3', the τ surface is exposed to the outside on the substrate S, and the leakage surface of the substrate S and the near-cooling from i3a are provided without any smearing. The state of the object enables the light-radiating heat to smoothly move from the substrate S to the proximity cooling, and efficiently cools the substrate S» and has three large-to-ground coolings, and can also be kept with the substrate "substantially (four) material (four) The covering member covers the surface of the substrate S

body. In this case, the cover member and the substrate material 3 are preferably substantially the same "', the emissivity, and the combined heat capacity of the base &amp; s and the cover member are substantially the same as the heat capacity of the substrate holder 3. Next, the heat transfer in the vacuum chamber 2 of Fig. 1 will be explained. Since the cooling plate 13 and the substrate holder 3 are arranged close to each other, it can be considered to be substantially a parallel flat plate. The heat transfer of the radiant heat per unit area of the parallel flat plate It is expressed by the following formula 3. Q - esaTs4 - ecaTc4 (Equation 3) where 'Q is heat, es is the heat emissivity of the substrate S, is the heat emissivity of the cooling plate 13, and σ is Steffen_ Bozeman (Stefan_B〇Uzmann)

The law, Ts is the absolute temperature [K] of the substrate s, and Tc is the absolute temperature [K] of the cooling plate 13 . ε s is the same level as ε c , so as long as the TC is sufficiently lower than Ts, heat will flow from the substrate S unilaterally to the cooling plate 1 3 » This effect, for example, when the Ts is 100 ° C, the cooling plate 13 The surface lm2 has a cooling effect before and after the lkW, and the temperature of the substrate s can be lowered by 30 compared with the case where the cooling plate 13 is not provided. (: The above. Since the cooling plate 13 absorbs heat from the upper and lower sides, the cooling capacity of the cooling plate 13 may be as long as 2 kW. Since the evaporation source 6 is 1 to 3 kW, the ion source 7 is a heat source of 0.5 to 1.5 kW' Therefore, when the cold 21 1355093 is insufficiently effective only by the cooling plate 13 (the upper cooling plate 43 of FIG. 2), the bottom cooling plate 4 4 or the side cooling plate 4 can be provided by other embodiments as shown by the circle 2. 5, the temperature of the substrate S can be more effectively reduced. Next, a film forming apparatus according to another embodiment of the present invention will be described with reference to Fig. 2. Fig. 2 is an explanatory view of a film forming apparatus 1 according to another embodiment of the present invention. The film forming apparatus (ion assisted vapor deposition apparatus) 1 is characterized in that it has a bottom cooling plate 44 and side cooling in addition to a cooling plate (upper cooling plate 43) provided on the upper surface side of the substrate holder 3 The plate 45' surrounds the entire periphery of the substrate holder 3 with a cooling plate. The inside of the vacuum chamber 2 has a main component as a main component, and the substrate holder 3 is disposed on the opposite side of the evaporation source 6 and is adjacent to the substrate holder 3. The upper cooling plate 43, the bottom cooling plate 44 disposed at the bottom of the vacuum chamber 2, and the side cooling plate 45 disposed along the inner side surface of the vacuum chamber 2. The upper cooling plate 43 is the cooling plate of the first embodiment. Since the U has the same configuration, the description is omitted. That is, the upper cooling plate 43 constitutes a part of the cooling means of the present invention, and the surface on the side of the substrate holder 3 constitutes the near cooling surface 43a. The bottom cooling plate 44 constitutes the cooling means of the present invention. In some cases, the surface on the side of the substrate holder 3 constitutes the evaporation source side cooling surface 44a. Further, the side cooling plate 45 constitutes the cooling means of the present invention, and the surface on the side of the partial substrate holder 3 constitutes the side wall side cooling surface 45a. The cold cooling machine n and the cold coal f Η are equivalent to the cooling means of the present invention. The bottom cooling plate 44 is formed with an opening opening for the evaporation source 6 to pass through (the opening (opening) of the silicon source (the fourth source) 7 through the opening 44c (ion source) The opening source 22 is opened through the opening 44b and the ion source 7 is located in the region surrounded by the cooling plate 13 via the opening 44c. As described above, the bottom cooling plate 44 is provided with the opening 4 4b, 44c is a shape which does not hinder the vapor deposition material p or the ion beam supplied from the evaporation source 6 or the ion source 7 to the substrate S. The side cooling plate 45 is detachably attached to the side inner wall surface of the vacuum chamber 2. The cooling plate 45 functions as a detachment preventing plate. That is, the side cooling plate 45 has a function as a member for preventing the vapor deposition material from the evaporation source 6 from being attached to the inner wall surface of the side portion of the vacuum chamber 2. Further, when the vapor deposition material p adheres to the side cooling plate 45 to contaminate the inside of the vacuum chamber 2, the side cooling plate 45 can be removed from the vacuum chamber 2 and the surface can be polished by sandblasting or the like to remove the vapor deposition. The substance P can thereby make the inside of the vacuum chamber 2 clean. Further, the bottom cooling plate 44 is also detachable and has a function of preventing the detachment plate, similarly to the side cooling plate 45. The upper cooling plate 43, the bottom cooling plate 44, and the side cooling plate 45 are in contact with the cold coal pipe 46 on the wall side of the vacuum chamber 2. Cold coal pipe 46 and the first! The cold coal pipe 12 of the embodiment is similarly a tubular member that allows cold coal to flow inside. The cold coal pipe 46 is wound in a spiral shape on the upper side of the upper cooling plate 43. Secondly, the outer peripheral surface of the side cooling plate 45 is spirally wound, and is wound in a spiral shape on the lower side of the bottom cooling plate 44. The spout side of the cold soil machine n is connected to one end of the upper cooling plate 43, and the inflow side is fixed to one end of the bottom cooling plate 44. Therefore, the cold coal supplied from the refrigerator u is sequentially circulated in the upper cooling plate 43, the side cooling plate 45, and the bottom cooling plate 44, and is returned to the refrigerator 11. In the present fine form, the upper cooling plate 43, the bottom cooling plate 44, and the side portion 23 1355093 cooling plate 45 surround the entire periphery of the substrate holder 3. That is, the heat of the evaporation source 6 or the ion source 7 is absorbed by the bottom cooling plate 44 and the side cooling plate 45, thereby absorbing the radiant heat from the substrate holder 3, and thus cooling is provided only above the substrate S. The above-described embodiment of the plate 13 can more reliably cool the substrate S. Both the bottom cooling plate 44 and the side cooling plate 45 are arbitrary constituent elements of the present invention. The bottom cooling plate 44 and the side cooling plate 45 may not be particularly cold depending on the heat-resistant temperature or film forming conditions of the substrate s (the input power conditions for the electron rush or the ion source 7, the film formation time, etc.) The coal is simply circulated for cooling by water cooling. Further, when the substrate s can be sufficiently cooled by only the upper cooling plate 43, the cooling of the bottom cooling plate 44 and the side cooling plate 45 can be omitted. Further, in the present embodiment, the refrigerator 1 for cooling the upper cooling plate 43, the bottom cooling plate 44, and the side cooling plate 45 is a common device, but may be provided to cool each of the cooling plates 43~ 4 5 individual cold beads machine. Next, the configuration of the semiconductor light-emitting device substrate according to an embodiment of the present invention will be described with reference to Fig. 3 . Fig. 3 is a schematic cross-sectional view showing a semiconductor light-emitting device substrate according to an embodiment of the present invention. Generally, as shown in Fig. 3, the semiconductor light-emitting device has a buffer layer 1 〇〇, an n-type 〇aN layer Π0, a light-emitting layer 120, and a p-type GaN layer 130 sequentially formed on a substrate S made of sapphire or the like. Further, a part of the n-type GaN layer 11 is removed stepwise by etching, and the removed portion is formed with the n-electrode 210. Further, the 'p electrode 230 is formed on the p-type GaN layer 130. On the other hand, in the substrate S, the dielectric layer 24 1355093 H, L and the reflective layer r β corresponding to the antireflection layer are provided on the surface opposite to the surface on which the respective layers including the light-emitting layer 12 are provided. The side of the reflective layer R in the substrate S of the semiconductor light-emitting device substrate according to the embodiment of the present invention will be described. Each of the dielectric layers H, L is interposed between the high refractive index dielectric layer and the low refractive index dielectric layer Le on the substrate S. FIG. 3 is shown on the substrate S from the high refractive index dielectric layer. The dielectric layer h, l has a total of four layers, but each layer may be provided with several layers, as long as the material having a relatively high refractive index is combined with a film composed of a low substance. . Examples of the material forming the high refractive index dielectric layer H include titanium oxide (Ti〇2, refractive index: 2.52), aluminum oxide (Zr〇2, refractive index: 24), and button oxide (TkO5, refractive index). 2 16), niobium oxide (Nb2〇5, refractive index 2.33). Further, examples of the material for forming the low refractive index dielectric layer L include aluminum oxide (Ai 2 〇 3, refractive index 176), cerium oxide (Si 〇 2, refractive index I. 45), and magnesium fluoride (MgF 2 ). , refractive index 1.37). After forming each of the dielectric layers 1 of the above configuration [after that, the reflective layer r is formed. The reflective layer R is formed of a metal having a high reflectance, and for example, aluminum or silver (Ag) is used. When A1 is used as the material of the reflective layer R, the substrate temperature at the time of film formation, the pressure in the vacuum chamber 2, and the reflectance are largely correlated. Further, each of the dielectric layers H, L and the reflections; |R is formed by vapor-depositing various materials using the thin film forming apparatus 1. Further, each film thickness is appropriately set depending on the desired reflectance. Further, when each of the dielectric layers h, 1 is formed, the pressure in the vacuum chamber 2 is set to be 1x1 〇 _ 3 Pa or less, and the dielectric layer H L is formed so as to be about ΐχ 1 〇 4 to 1 X HT 3 Pa. When each dielectric layer H, L is formed into a film, when it is formed under a pressure of more than lxlG.3p, it is difficult to obtain 25 1355093 to obtain a good film quality of each dielectric layer H, L. Further, at this time, if the substrate S is When the temperature is set to 100 to 120 ° C, and more preferably 110 ° C, since the filling density of each of the dielectric layers H and L is high, it is preferable that β is formed by using Ai on each of the dielectric layers H and L. In the case of the layer R, the substrate temperature is set to 50 ° C or lower, and the pressure in the vacuum chamber 2 is set to 3 χ 1 (T4Pa or less to form a film. Thus, when the reflective layer r is formed by using A1) The temperature of S is set to 70 eC from room temperature (25 ° C), and is preferably set to 25 ° C to 50. (: When the film is used, the reflective layer R can be obtained with good reflectance. In the case of a film, the pressure in the vacuum chamber 2 in which the substrate S is disposed is set to be 1 χ 1 〇 4 to 3 x 1 (at a T4 Pa level, that is, the reflective layer R having a good reflectance can be obtained. On the other hand, the substrate temperature is higher than 70°). c or when the internal pressure is higher than 3xl〇-4Pa, it is difficult to obtain a reflection layer R having a good reflectance. Further, in FIG. 3, the buffer layer 100 and the n-type GaN layer 1 1 are sequentially laminated on the substrate s. The light-emitting layer 12A and the p-type GaN layer 130 are formed on the side opposite to the semiconductor layer, and the structure of the semiconductor layer is not limited thereto. The semiconductor layer composed of other materials can of course be provided in a different configuration from that of Fig. 3. Next, the dielectric layer of the above-described structure using the thin film forming apparatus 1 of the present embodiment will be described with reference to Figs. 4 and 5 . The film formation procedure of h, l and reflective layer R film formation. In addition, although the order of each step is different in FIG. 4 and FIG. 5, it can be appropriately determined according to the material and film thickness of each dielectric layer H, L, and the like. First, a process for fabricating a semiconductor light-emitting device substrate according to an embodiment of the present invention will be described with reference to Fig. 4. Fig. 4 is a flow chart showing the process of the present invention for implementing a semiconductor light-emitting device substrate. ^In the process, the first substrate s (see FIG. 3) is placed on the substrate holder 3 in the state in which the surface of the reflective layer R is formed downward (substrate holding step S1) e*, the gate to the door 2, and the vacuum valve is opened. 3 1, the vacuum of the vacuum chamber 2 The gas (vacuum evacuation step, the warping step S2). In addition, the operation can also be performed by the pressure control means 34. In the substrate holding step S1, the substrate 3 is formed by the reflective layer r. The state of the source 6 side is set in the substrate holder 3. More specifically, the buffer layer 1 〇〇, „ _ layer quot layer, luminescent layer i 2 〇, H (four) layer 130 ′ are sequentially laminated and each electrode is formed. The substrate S (see FIG. 3) of 21G and 23G is provided on the substrate holder 3 in a state in which the surface of each of the semiconductor layers is not formed. Further, the film formation of each semiconductor layer may be provided before the substrate holding step S1. The step of forming each of the semiconductor layers on one surface of the substrate S or the step of forming the respective semiconductor layers in the step S10 (four) in the reflective layer. However, in general, since the formation of each semiconductor layer made of a GaN-based compound requires severe conditions, it is preferable to form each semiconductor layer on the substrate s in advance, and then form each of the semiconductor layers on the back surface. The dielectric layer is only [, and the step of reflecting layer R. After the vacuum is brought to a reduced pressure state, the heating of the heating means 8 is started to set the substrate S to the set temperature (in the present embodiment, 丨 〇〇 c), and the temperature of the substrate s is controlled by the temperature control means 24. Adjusted to the set temperature (substrate heating step S3). In this case, the heating means 8 is preferably connected to the temperature control means 24, and the temperature of the substrate S may be controlled to a set temperature before the start of the dielectric layer forming step S7. 27 1355093 As described above, the film formed on the substrate S after the substrate s is heated and maintained at a constant temperature is preferable because the filling density is high. Thereafter, the pressure in the vacuum chamber 2 is measured and displayed by the pressure gauge 32, and it is judged by the pressure control means 34 whether or not it has become lxl0-3Pa or less (first determination step S4). In the first determining step S4, in the true

When 10 3 Pa or less (first judgment step S4: No), the vacuum valve 31 is kept in the on state, and is continuously exhausted by the vacuum pump 33. On the other hand, when the pressure in the vacuum chamber 2 has reached lxl 〇 -3 Pa or less (4) (first determination step S4: Yes), the vacuum valve 3 is appropriately opened and closed by the pressure control means 34 to control the displacement of the vacuum pump 33. In order to maintain the inside of the vacuum chamber 2 below lXl 〇 -3 Pa. Further, even if the predetermined pressure is reached in the vacuum chamber 2 (first determination step S4: Yes), it is preferable to maintain the state in which the vacuum valve 3 and the MV (small valve) not shown are opened.

After the vacuum chamber 2 is maintained at (10), the substrate holder (substrate holding means) 3 of _ = is rotated (the substrate holding means is rotated, and the substrate 8 is irradiated with an ion beam from the ion source 7). By irradiating the ion beam ', it is possible to effectively remove the contaminant attached to the surface of the substrate S, in particular, a hydrocarbon-based polymer or the like (substrate cleaning step %). In addition, the plate holding means rotation step 35 is not determined. Sequentially, it can also be set before and after other steps. Body sound = after the surface of the substrate S 'dielectric by the above-mentioned composition of steaming ore (4) (four) money (formation of the formation of (4) S7) 4 « layer formation system control is set to release a high refractive index substance (for example, Τ4〇5, τί〇28 1355093, etc.) or an evaporation source of a low refractive index substance (for example, etc.), and a shutter (not shown) near 6 to open and close the high refractive index substance The low refractive index material is alternately emitted toward the substrate s. During the release of the vapor-bonding substance P, ions are adhered from the ion source 7 (for example,/or impinging on the substrate S to adhere to the respective dielectric layers of the substrate 3). H, L surface is smooth and fine. After repeating this operation for a predetermined number of times, a multilayer film is formed. At this time, although the substrate s is caused to have a charge variation due to the irradiation of the ion beam, the deviation of the charge can be irradiated toward the substrate S from a neutralizer not shown. The electrons are neutralized and the solution is solved. Thereafter, the heating of the substrate S is completed, and the refrigerator 11 operating in the preliminary mode is set to the cooling mode to start the operation, and the cooling is started (cooling step S9). After the ion cleaning (substrate cleaning step S6) and the formation of each of the dielectric layers H, L (dielectric forming step S7), the substrate s becomes a high temperature of 1 〇〇 or more. Since A, the stop group is set by s "The heated substrate heating stop step S8 and the cooling step S9, using the cooling means u, 12, 13 to cool the sheet S, and can be quickly cooled to a substrate temperature suitable for the formation of the reflective layer r to be performed next" In addition, in FIG. 4, although the order of the substrate heating stop step S8 and the cooling step S9 may be in the front, it is preferable to perform the substrate heating stop step S § in order to suppress the electric power/short consumption. cool down The step of forming the reflective layer forming step sii is completed. Therefore, it is preferable to form the reflective layer R having a higher reflectance while forming the reflective layer r by cooling. Next, the temperature of the substrate S is measured by the thermometer 25. It is determined by the temperature control means 24 whether or not the substrate temperature has become 5 (rc or less (second determination step 29 1355093, step S10). Further, even if the substrate temperature has become 50 〇c or less, the pressure control means 34 judges the vacuum chamber 2 Whether the pressure inside has become 3xl〇-4pa or less (second judgment step S10), and only proceeds to the next step in the case where both the substrate temperature and the internal pressure condition are satisfied (second determination step Si〇: Yes ). In this case, the temperature control means 24 preferably inputs a predetermined temperature (5 (TC) in the present embodiment and determines whether or not the temperature has been equal to or higher than a predetermined temperature. Further, the pressure control means 34 is the most; The pressure (in the present embodiment, 1x10 3Pa and 3xl 〇.4Pa)' is determined in each of the determination steps S4 and S10 as to whether or not the predetermined pressure is equal to or lower than the predetermined pressure. When the substrate temperature is less than 50 ° C (second judgment) Step s丨〇: N〇), it is difficult to obtain a good reflectance in the reflective layer R. Therefore, the cooling of the substrate s is continued, and the judgment of the step sio is repeated. Also, when the vacuum chamber 2 does not reach 3 x l 〇 - When it is 4 Pa or less (second determination step S1 〇: N 〇), it is also difficult to obtain a good reflectance in the reflective layer r. Therefore, during the reflection layer forming step su, it is also a vacuum valve 3 1 or not. The MV is turned on, that is, the vacuum is continuously exhausted, and the pressure in the vacuum chamber 2 is maintained below 3×10 −4 Pa to form a good film quality reflective layer R. The second determination step S1 ,, only meets the substrate temperature. In the case of both internal pressure conditions, The reflective layer R is formed on the dielectric layers H, L (reflection layer forming step S11). At this time, the temperature control means 24 and the pressure control means 34 and the unillustrated switch which is provided on the evaporation source 6 may be controlled. The shutter control means of the state is connected to each other 'the shutter is automatically opened when the above two conditions are satisfied, and the reflective layer R is formed into a film. Then, after the reflective layer R reaches a predetermined film thickness, the opening and closing are not shown. , the substrate s is appropriately cooled by the cooling mechanism, and the film formation is completed. In the case of ^ 30 1355093, it is shown that the substrate is heated by the substrate heating step S3 of FIG. 4 during the period of 0 minutes and 18 minutes from the start of manufacture. In the case of 8. Further, the temperature of the substrate S through the substrate heating step S3 is increased by the filling density of each dielectric layer, so that it is llGt. Further, the vacuum evacuation step S2 of Fig.* has been performed before the heating of the substrate s is started. Then, after about 18 minutes have elapsed (line A of Fig. 6), since the pressure in the vacuum chamber 2 has become the degree of lxl〇-3pa, it is determined in the first judgment step S4 that it is inside the vacuum chamber 2. The pressure is below ixur3pa, followed by = line Before the formation of step (IV), the substrate holding means rotation step S5 and the substrate cleaning step % of Fig. 4 are performed. * In Fig. 6, when the substrate temperature rise is observed at about 19 minutes, the system has been on: After the cleaning of the substrate, the substrate temperature was observed to decrease. After that, the temperature of the substrate was raised to the line B in Fig. 6, but the temperature of the substrate was increased. The case where each of the &quot;electrical layers h, L is formed by the dielectric formation step S7 of Fig. 4 is shown. In addition, the value of 2 in Fig. 6 is 27 points.

Inter-system display

The soil reverse S interacts with the high refractive index dielectric layer U 曰 , the first layer and the low refractive index dielectric layer. (I1st 4nd bis: After the dielectric layer has been formed (i.e., line B in Fig. 6), the step of heating is stopped by the cold portion step S9 of Fig. 4; Fig. 67. 'In this case, the substrate in the position between the flat line β and the line c of the substrate temperature is substantially simultaneously. q In detail, after 2 minutes in the circle 6 to about 57 minutes (3. During the period of time, the time shown by Arrow Shuo) is cooled. 35 1355093 After that, about 45 minutes before the start of manufacturing (to a slight increase in substrate temperature, but the line C in this system) observes the shot layer... Preheating for one minute: The beam is used to reduce the pressure in the vapor chain back to 5.0x1〇-4pa. Therefore, at this time, the vacuum chamber and, thereafter, the ions of the ion beam of the laminated reflective layer are cleaned. In addition, the ion clean (four) film is carried out during the -min period of 2.1x10, ^, 'in the vacuum chamber 2

The ion cleansing conditions of the ion beam are carried out under the conditions of ion cleansing conditions. Introduction of gas: oxygen 60 sccm

Ion Acceleration Voltage: 500V Ion Current: 500mA Neutralizer Condition

Neutralizer current: 1000 mA Discharge gas: Argon lOsccm Thereafter (after line D in Fig. 6), in order to form the reflective layer R, the inside of the vacuum chamber 2 is decompressed to the vacuum chamber 2 while cooling the substrate S. Become the appropriate pressure range. Next, when 55 minutes have elapsed from the start of manufacture (line E in Fig. 6), it is confirmed in the second determination step s1 of Fig. 4 that the pressure in the vacuum chamber 2 is 3xl (T4Pa or less and the substrate temperature is 50C or less). In addition, 'the vacuum chamber 2 is 2.0x1 (T4Pa, radiation thermometer is 30 t. From the start of manufacturing to 55 minutes to 57 minutes (between line E and line F in Fig. 6), the vacuum chamber 2 is made. The pressure inside is 2.0 to 3.0x1 (T4Pa, and the A1 film is vapor-deposited on the substrate s to form the reflective layer R (reflection layer forming step S11). 36 1355093 In addition, since the substrate s has been cooled at this time, no comparison is observed. The temperature rises substantially and becomes constant. Thereafter, the temperature of the substrate S is further cooled to near room temperature, and the vacuum chamber 2 is leaked (leakage step S12). Therefore, in the present embodiment, the dielectric layer is formed. After the film formation (line B in Fig. 6) until the film formation of the reflective layer R is started (line E in Fig. 6), the time for cooling the substrate is 28 minutes. In the conventional method, the substrate is formed in order to form the reflective layer R. The temperature is cooled to below 50 ° C, and the cooling time is required to be 2 to 3 hours. Compared to the present embodiment, the substrate can be used. The temperature was cooled to a lower temperature near room temperature, and the cooling time was extremely shortened to 28 minutes. Further, the reflective layer R was formed under the following conditions: Reflective layer material: Film formation speed of A1 A1: 2.5 nm/sec In the example, the reflectance of the reflective layer R of the film formed in the range of 45 〇 to 47 〇 nm (the wavelength range of the blue led light emission) is 98%. Therefore, the reflection of the 'semiconductor light-emitting element|plate of the present invention is good. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing a thin crucible forming apparatus according to an embodiment of the present invention. Fig. 2 is a view showing another embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 3 is a schematic cross-sectional view showing a semiconductor light-emitting device according to an embodiment of the present invention. Soil 37 1355093 FIG. 4 is a flow chart showing a process of a semiconductor light-emitting device substrate according to an embodiment of the present invention. Figure 5 is a flow chart showing the process of a semiconductor light-emitting device substrate according to another embodiment of the present invention. Figure 6 is a view showing the manufacturing time and substrate temperature of a semiconductor light-emitting device substrate according to an embodiment of the present invention. The graph lines. FIG. 7 lines showed laminated with a graph showing the relationship of the wavelength of the reflective layer is different from the refractive index of the dielectric and the electrode reflectivity.

[Description of main component symbols] 1 Ion-assisted vapor deposition device (thin film forming device) 2 Vacuum chamber 3 Substrate holder (substrate holding means) 3a Through hole 3b Mounting member 4 Substrate holder rotating shaft 5 Substrate holder rotating motor 6 Evaporation source 7 Ion source 8 Heating means 11 Cold bead machine (cooling means) 12 Cold coal pipe (cooling means) 13 Cooling plate (cooling means) 13a Near cooling surface 17, 18 Mounting fixture

38 1355093 20 Compressor 21 Cooling solenoid valve 22 Water condenser 23 Thawing solenoid valve 24 Temperature control means 25 Thermometer 26 Heat exchanger 31 Vacuum valve

32 Pressure gauge 33 Vacuum pump 34 Pressure control means 43 Upper cooling plate (cooling means) 43a Near cooling surface 44 Bottom cooling plate (cooling means) 44a Evaporation source side cooling surface

44b opening (evaporation source through opening) 44c opening (ion source through opening) anti-dropping plate) 45 side cooling plate (cooling means, 4 5a side wall side cooling surface 46 cold coal pipe 100 buffer layer 110 n-type GaN layer 120 light-emitting layer 13 0 p-type GaN layer 210 η electrode 39 1355093 230 p electrode S substrate P vapor deposition material R reflective layer Η high refractive index dielectric layer L low refractive index dielectric layer

Claims (1)

1355093 April 1, 2010 replacement page VII. Patent application scope: 1. A method for manufacturing a semiconductor light-emitting device substrate, wherein the semiconductor light-emitting device substrate is sequentially provided on one side by a titanium oxide, which is alternately combined on the substrate. a dielectric layer of a layer composed of any of an oxide, a button oxide or a cerium oxide and a layer composed of any of aluminum oxide, cerium oxide or magnesium fluoride, and a reflection composed of aluminum The layer is characterized by: a substrate holding step of: holding the substrate in a φ substrate holding means disposed in the vacuum chamber; a true second exhausting step 'discharging the gas in the vacuum chamber; a substrate heating step' and the vacuum The venting step is performed substantially simultaneously to heat the substrate; the substrate cleaning step is performed by irradiating ions on the substrate to wash the substrate; and the W layer forming step is performed to set the temperature of the substrate to 1 〇〇 12 〇 ° C 'depositing the dielectric layer on the substrate; the substrate heating stop step' stops the heating of the substrate; a cooling means disposed at a position in the vicinity of the substrate and not in contact with the substrate, absorbing radiant heat from the substrate and the substrate holding means to start cooling of the substrate and the substrate holding means; and a step of forming a reflective layer The temperature of the substrate was set to 25 to 7 Torr. Thereafter, the reflective layer is deposited on the dielectric layer. "2. A method of manufacturing a semiconductor light-emitting device substrate, wherein the semiconductor light-emitting device substrate" is provided on the substrate in sequence, and is alternately combined with titanium oxide, 35 oxide, lanthanum oxide or lanthanum oxide on the substrate. A substance composition 41 1355093 _ 100 April '|The dielectric layer of the page changing layer and the layer composed of any material of aluminum oxide '矽 oxide or magnesium fluoride, and aluminum a reflective layer, comprising: a substrate holding step of: holding the substrate in a substrate holding means disposed in the vacuum chamber; a vacuum exhausting step of discharging the gas in the vacuum chamber; a substrate heating step, and the vacuum row The gas step is performed substantially simultaneously to heat the substrate; the cold portion step 'absorbs from the substrate and the substrate holding hand by means of a cooling means disposed at a position adjacent to the substrate and in non-synchronous contact with the substrate Radiating 'to start the cooling of the substrate and the substrate holding means; the substrate cleaning step' irradiates the substrate with ions to wash the base a dielectric layer forming step of setting a temperature of the substrate to 1 〇〇 to 12 〇 ° c ' and depositing the dielectric layer on the substrate; stopping the substrate heating step, stopping heating of the substrate; and reflecting In the layer forming step, the temperature of the substrate is set to 25 to 7 (TC, and the reflective layer is deposited on the dielectric layer. 3. The semiconductor light-emitting device substrate according to claim 1 or 2 of the patent application. In the manufacturing method, the step of determining whether the vacuum chamber is 1x1〇-3 Paa before the step of cleaning the substrate is provided in the step of preparing the substrate 1; the step of determining whether the vacuum chamber is lxl G.-3 Paa or less; That is, the substrate cleaning step is performed. 4' The method for manufacturing a semiconductor light-emitting device substrate according to the third aspect of the patent scope is further provided for determining the aforementioned 42 1355093 100 before the step of forming the reflective layer. In April of the year, the temperature of the replacement page substrate is 5 〇 ° C or less and whether the vacuum chamber is 3 χ 10-4 Pa or less; the temperature of the substrate is 5 (TC or less and the foregoing When the vacuum chamber is 3 χ 10 Pa or less, the reflective layer forming step is performed. 5. The method for fabricating a semiconductor light-emitting device substrate according to claim 4, wherein the second determining step is performed by vacuum a vacuum pump connected to the 空U empty chamber, a pressure control means connected to the vacuum pump, a thermometer disposed near the substrate, and a temperature control means connected to the cold damper means; the reflective layer forming step, pulling + W system is controlled by the opening and closing control means connected to the pressure control means and the temperature control means, and the opening control of the shutter disposed on the evaporation source is performed to perform β χ 八, pattern: (e.g. ) 43