JP4889607B2 - Supply device, vapor deposition apparatus - Google Patents

Supply device, vapor deposition apparatus Download PDF

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JP4889607B2
JP4889607B2 JP2007259069A JP2007259069A JP4889607B2 JP 4889607 B2 JP4889607 B2 JP 4889607B2 JP 2007259069 A JP2007259069 A JP 2007259069A JP 2007259069 A JP2007259069 A JP 2007259069A JP 4889607 B2 JP4889607 B2 JP 4889607B2
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敏夫 根岸
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株式会社アルバック
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本発明は蒸着装置に関する。 The present invention relates to deposition apparatus.

有機EL素子は近年最も注目される表示素子の一つであり、高輝度で応答速度が速いという優れた特性を有している。 The organic EL element is one of a display device in recent years the most attention, and has excellent characteristics in that they have a high response speed at high brightness. 有機EL素子は、ガラス基板上に赤、緑、青の三色の異なる色で発色する発光領域が配置されている。 The organic EL element, red on a glass substrate, a green light-emitting region is arranged to be colored in three colors different blue colors. 発光領域は、アノード電極膜、ホール注入層、ホール輸送層、発光層、電子輸送層、電子注入層及びカソード電極膜がこの順序で積層されており、発光層中に添加された発色剤で、赤、緑、又は青に発色するようになっている。 Light emitting region, an anode electrode film, a hole injection layer, a hole transport layer, light emitting layer, electron transporting layer, an electron injection layer and a cathode electrode film are laminated in this order, with the added color former in the light emitting layer, red, is adapted to the color green, or blue.
ホール輸送層、発光層、電子輸送層等は一般に有機材料で構成されており、このような有機材料の膜の成膜には蒸着装置が広く用いられる。 Hole transport layer, light emitting layer, an electron transporting layer or the like is generally is composed of an organic material, the vapor deposition apparatus is widely used for the deposition of films of such organic materials.

図4の符号203は、従来技術の蒸着装置であり、真空槽211の内部に蒸着容器212が配置されている。 Reference numeral 203 in FIG. 4 is a prior art deposition apparatus, deposition vessel 212 is disposed inside the vacuum chamber 211. 蒸着容器212は、容器本体221を有しており、該容器本体221の上部は、一乃至複数個の放出口224が形成された蓋部222で塞がれている。 Vapor deposition case 212 has a container body 221, the upper portion of the container body 221 is closed in one or lid 222 in which a plurality of discharge openings 224 are formed.
蒸着容器212の内部には、粉体の有機蒸着材料200が配置されている。 Inside the vapor deposition vessel 212, the organic vapor deposition material 200 in powder is arranged.

蒸着容器212の側面と底面にはヒータ223が配置されており、真空槽211内を真空排気し、ヒータ223が発熱すると蒸着容器212が昇温し、蒸着容器212内の有機蒸着材料200が加熱される。 The side surface and the bottom surface of the vapor deposition vessel 212 is disposed a heater 223, a vacuum chamber 211 is evacuated, heated and the vapor deposition vessel 212 heater 223 generates heat, the temperature, the organic vapor deposition material 200 in the vapor deposition case 212 is heated It is.
有機蒸着材料200が蒸発温度以上の温度に加熱されると、蒸着容器212内に、有機材料蒸気が充満し、放出口224から真空槽211内に放出される。 When the organic vapor deposition material 200 is heated to a temperature above the evaporation temperature, in the vapor deposition case 212, the organic material vapor is filled, is released into the vacuum chamber 211 from the discharge port 224.

放出口224の上方にはホルダ210が配置されており、ホルダ210に基板205を保持させておけば、放出口224から放出された有機材料蒸気が基板205表面に到達し、ホール注入層やホール輸送層や発光層等の有機薄膜が形成される。 Above the discharge opening 224 is disposed a holder 210, if allowed to hold the substrate 205 to the holder 210, the organic material vapor discharged from the discharge port 224 reaches the substrate 205 surface, the hole injection layer or a hole the organic thin film such as transport layer or light emitting layer is formed.

有機材料蒸気を放出させながら、基板205を一枚ずつ放出口224上を通過させれば、複数枚の基板205に逐次有機薄膜を形成することができる。 While releasing organic material vapor, if passed over discharge openings 224 of the substrate 205 one by one, it is possible to form the successive organic thin film on a plurality of substrates 205.
しかし、複数枚の基板205に成膜するには、蒸着容器212内に多量の有機材料を配置する必要がある。 However, in forming a film on a plurality of substrates 205, it is necessary to arrange a large amount of organic material in the vapor deposition case 212. 実際の生産現場では、有機材料を250℃〜450℃に加熱しながら120時間以上連続して成膜処理を行うため、蒸着容器212内の有機蒸着材料200は長時間高温に曝されることになり、蒸着容器212中の水分と反応して変質したり、加熱による分解が進行する。 In actual production site, for performing a film forming process continuously over 120 hours while heating the organic material to 250 ° C. to 450 ° C., the organic vapor deposition material 200 in the vapor deposition case 212 is to be prolonged exposure to high temperatures becomes, or degenerated by reacting with moisture in the vapor deposition case 212, decomposition by heating proceeds.
その結果、初期状態に比べて有機蒸着材料200が劣化し、有機薄膜の膜質が悪くなる。 As a result, the organic vapor deposition material 200 is deteriorated as compared with the initial state, the film quality of the organic thin film is deteriorated.

突条が螺旋状に形成された回転軸(スクリュー)を筒内で回転させることで、突条間の溝を通った有機蒸着材料が、少量ずつ加熱用の容器に供給される装置が知られており(例えば、特許文献1、3)、この装置によれば、有機蒸着材料は一度に多量に加熱されないから、有機蒸着材料が劣化し難い。 Ridge is by rotating the rotation shaft formed helically (screw) in the cylinder, the organic vapor deposition material through the groove between ridges is, a device that is fed to the vessel for heating small portions known and (for example, Patent documents 1 and 3), according to this device, since the organic vapor deposition material is not heavily heated at once, the organic vapor deposition material is hardly deteriorated.
しかし、加熱用の容器を加熱する際には、回転軸も加熱されやすく、有機蒸着材料は加熱手段に到達する前に、突条間の溝で蒸発してしまい、有機蒸着材料を加熱用容器に配置することが困難になる。 However, when heating the container for heating, the rotation shaft tends to be heated, before the organic vapor deposition material reaching the heating means, would be evaporated in the groove between ridges, container heating the organic vapor deposition material it is difficult to be placed in.
特開平10−140334号公報 JP 10-140334 discloses 特開2006−307239号公報 JP 2006-307239 JP 特開2007−70687号公報 JP 2007-70687 JP

本発明は上記課題を解決するためのものであり、その目的は、有機蒸着材料を加熱用の容器に少量ずつ配置し、効率よく成膜を行うことである。 The present invention has been made to solve the above problems, small amounts of organic vapor deposition material containers for heating disposed, it is to perform efficiently deposition.

上記課題を解決するために、本発明は、底面に開口が形成されたタンクと、一端が前記タンクの開口に接続され、他端が前記タンクの外部空間に露出された接続管と、前記接続管に挿入された回転軸と、前記回転軸を回転させる回転手段と、前記回転軸は中心軸と、前記中心軸の周囲に螺旋状に形成された突条とを有し、前記突条間の溝を介して、前記タンクの内部空間が、前記接続管の他端が露出する外部空間に接続された供給装置であって、前記突条はSi 34を主成分とするセラミック材料で構成された供給装置である。 In order to solve the above problems, the present invention includes a tank having an opening at a bottom surface, one end connected to the opening of the tank, the connecting pipe whose other end is exposed to the external space of the tank, the connection has a rotary shaft inserted into the pipe, and rotating means for rotating the rotary shaft, the rotary shaft and the central axis, and a protrusion formed in a spiral shape around the central axis, between said protrusions through the groove of the internal space of the tank, a supply device connected to the external space to which the other end of said connection tube is exposed, the protrusion is a ceramic material mainly composed of Si 3 N 4 it is configured feeder.
本発明は供給装置であって、前記中心軸は前記突条と同じ前記セラミック材料で構成された供給装置である。 The present invention relates to a feed device, wherein the central axis is the supply device configured in the same said ceramic material and said projection.
本発明は、コイルと、前記コイルの内側の電磁場形成空間に位置する高温体と、前記コイルに接続された交流電源とを有し、前記交流電源から前記コイルに交流電圧を印加すると、前記高温体が誘導加熱される供給装置であって、前記中心軸の先端は前記電磁場形成空間に位置する供給装置である。 The present invention includes a coil, a hot body located inside the electromagnetic field forming space of the coil, and a AC power supply connected to the coil, when an AC voltage is applied to the coil from the AC power supply, the hot a feeding device body is inductively heated, the tip of the central axis is the supply device positioned in the field forming space.
本発明は、真空槽と、放出装置と、前記供給装置とを有し、前記供給装置の前記高温体が配置された空間が、前記放出装置の内部空間に接続され、前記放出装置には、前記真空槽の内部空間と前記放出装置の内部空間とを接続する放出口が形成された蒸着装置である。 The present invention includes a vacuum chamber, a discharge device and the supply device, the space in which the high-temperature body is arranged in the supply device is connected to the internal space of the discharge device, the discharge device, wherein a vapor deposition apparatus outlet for connection is formed and the inner space of the inner space and the discharge device of the vacuum chamber.

尚、本発明で主成分とは、主成分とする物質を全体の50重量%以上含有することであり、Si 34を主成分とするセラミック材料とは、Si 34を50重量%含有するセラミック材料の意味である。 Incidentally, the main component and the present invention is to contain a substance that mainly the whole of 50 wt% or more, and the ceramic material mainly composed of Si 3 N 4, Si 3 N 4 50 wt% it is meant a ceramic material containing.

回転軸に接触する蒸着材料が加熱されないので蒸着材料が変質しない。 Deposition material is not deteriorated because the deposition material in contact with the rotating shaft is not heated. 蒸着材料は回転軸の溝を通って、タンクから蒸発室へ移動する間に蒸発せず、途中で詰まることもないので、必要量の蒸着材料を正確に蒸発室に配置可能である。 Depositing material through the grooves of the rotary shaft, not evaporate while moving from the tank to the evaporation chamber, so that no clogged on the way, it is possible to place the required amount of the evaporation material to accurately evaporation chamber. 必要量の蒸着材料を蒸発室内に正確に配置できるから、成膜される薄膜は決められた膜厚になる。 Since the required amount of the evaporation material can be accurately disposed in the evaporation chamber, a thin film to be deposited is a film thickness that is determined. 必要量の蒸着材料だけが加熱されるから、蒸着材料の劣化がおこり難い。 Since only the vapor deposition material of the required amount is heated, hardly occurs deterioration of the vapor deposition material.

図1の符号1は成膜装置(有機EL製造装置)の一例を示している。 Number 1 in Figure 1 shows an example of a deposition apparatus (organic EL manufacturing apparatus).
成膜装置1は複数の蒸着装置10a〜10cを有しており、ここでは、各蒸着装置10a〜10cは搬送室2に接続され、蒸着装置10a〜10cが接続された搬送室2には、搬入室3aと、搬出室3bと、処理室6と、スパッタ室7と、マスク収容室8とが接続されている。 Film-forming apparatus 1 has a plurality of deposition apparatuses 10a to 10c, wherein each evaporation apparatus 10a to 10c is connected to the transfer chamber 2, the transfer chamber 2 to deposition device 10a to 10c is connected, a carry-in chamber 3a, a carry-out chamber 3b, and the processing chamber 6, the sputtering chamber 7, and the mask storage chamber 8 is connected. マスク収容室8内部には複数のマスクが収容されており、蒸着装置10a〜10cやスパッタ室7内部に配置されたマスクと定期的に交換される。 Inside the mask storage chamber 8 is accommodated a plurality of masks, regularly exchanged and mask disposed inside the vapor deposition apparatus 10a~10c or sputtering chamber 7.

真空排気系9により、搬送室2内部と、蒸着装置10a〜10cの内部と、処理室6内部と、スパッタ室7内部と、マスク収容室8内部と、搬入室3a内部と、搬出室3b内部に真空雰囲気が形成される。 The vacuum evacuation system 9, and the inner transfer chamber 2, and the inside of the deposition apparatus 10a to 10c, and the processing chamber 6, and the internal sputtering chamber 7, and the internal mask accommodating chamber 8, and the internal loading chamber 3a, carry-out chamber 3b internal vacuum atmosphere is formed.
搬送室2の内部には搬送ロボット5が配置されている。 Transport robot 5 is disposed inside of the transfer chamber 2.

表面上に下部電極が形成された基板は搬入室3aに搬入され、該基板は搬送ロボット5によって真空雰囲気中を搬入室3aから搬送室2へ搬入され、処理室6で加熱処理やクリーニング処理等の処理がされ、蒸着装置10a〜10c内部で、電子注入層、電子輸送層、発光層、ホール輸送層、ホール注入層等の有機薄膜が形成され、スパッタ室7内部で上部電極膜が形成され、製造された有機EL素子は搬出室3bから外部に搬出されるようになっている。 The substrate on which the lower electrode is formed on the surface is carried into loading chamber 3a, the substrate is carried into the vacuum atmosphere from the carry-in chamber 3a by the transport robot 5 to the transfer chamber 2, heat treatment or cleaning process or the like in the processing chamber 6 the treatment is within the vapor deposition apparatus 10a to 10c, an electron injection layer, an electron transport layer, light emitting layer, a hole transport layer, an organic thin film of the hole injection layer is formed, the upper electrode film is formed inside the sputtering chamber 7 the organic EL device manufactured is adapted to be carried to the outside from the carry-out chamber 3b.

例えば、下部電極は基板表面の複数の領域にそれぞれ形成され、発光層は2色以上の異なる色の着色層(例えば赤、緑、青)が、異なる領域上に形成されて構成されている。 For example, the lower electrode is formed in a plurality of regions of the substrate surface, the light emitting layer is a colored layer of different colors or two colors (e.g. red, green, blue) is configured to be formed on different regions.
上部電極に通電した状態で、選択した電極に通電すれば、選択された電極上にある着色層だけが発光する。 While energizing the upper electrode, if energized to the selected electrodes, only the colored layer emits light that are on the selected electrodes. このように、2色以上の着色層で発光層を構成することで、フルカラー表示が可能となる。 In this way, by constituting the light emitting layer in two or more colors of color layers it can display a full color image.

図2は発光層の成膜に用いられる本発明の蒸着装置10bの模式的な斜視図、図3はその蒸着装置10bの断面図を示している。 Figure 2 is a schematic perspective view of a vapor deposition apparatus 10b of the present invention used for the deposition of the light emitting layer, Figure 3 shows a cross-sectional view of the vapor deposition apparatus 10b.
蒸着装置10bは、真空槽11と、放出装置50と、1又は2以上(ここでは3つ)の供給装置20a〜20cとを有している。 Vapor deposition apparatus 10b has a vacuum chamber 11, a discharge device 50, one or more (here three) and a feeder 20a~20c of. 各供給装置20a〜20cは同じ構成を有しており、同じ部材には同じ符号を付して説明する。 Each feeder 20a~20c have the same configuration, the same components are designated by the same reference numerals.

供給装置20a〜20cはタンク31(収容部)と、接続管42と、回転軸35と、回転手段41と、蒸発室21と、高温体22と、加熱手段24とを有している。 Feeder 20a~20c tank 31 (the housing part), and the connecting pipe 42, and the rotary shaft 35, the rotation means 41, the evaporation chamber 21 has a hot body 22, and a heating means 24.

タンク31は容器32と、蓋34を有しており、蓋34を開けるとタンク31の内部空間が大気雰囲気に接続され、蓋34を閉めると容器32の開口が密閉され、タンク31の内部空間が大気雰囲気から遮断される。 Tank 31 and the container 32 has a lid 34, the inner space of the tank 31 when open the lid 34 is connected to the atmosphere, the opening of the container 32 when closing the lid 34 is closed, the interior space of the tank 31 There is cut off from the atmosphere.
タンク31の底面(ここでは容器32の底面)はすり鉢状になっており、すり鉢状の底面の下端には開口が形成されている。 Bottom of the tank 31 (here the bottom of the container 32) has become a cone shape, the lower end of the cone-shaped bottom and an opening is formed. タンク31は開口が形成された底面を下方に向けて配置され、蒸発室21は該開口の下方位置に配置されている。 Tank 31 is disposed toward the bottom opening is formed below, the evaporation chamber 21 is disposed below the opening.

接続管42は上端がタンク31の開口に気密に接続され、下端が蒸発室21内部に気密に挿入されている。 Connecting pipe 42 at the upper end is connected airtightly to the opening of the tank 31, the lower end is inserted hermetically inside the evaporation chamber 21. 従って、接続管42の下端は蒸発室21の内部空間、即ち、タンク31の外部空間に露出している。 Accordingly, the lower end of the connecting tube 42 is the inner space of the evaporation chamber 21, i.e., is exposed to the external space of the tank 31.
接続管42は直管である。 Connecting pipe 42 is a straight tube. 回転軸35は直線状の棒でからなる中心軸37と、中心軸37の周囲に螺旋状に形成された突条36とを有している。 Rotation shaft 35 has a central axis 37 made of a straight bar, and a projection 36 formed in a spiral shape around the central axis 37. 突条36は螺旋状であるから、突条36間の溝も螺旋状になっている。 Ridge 36 is because it is a spiral, also the grooves between the ridges 36 have become spirally.

回転軸35は突条36が形成された領域の少なくとも一部が接続管42内に位置するように接続管42に挿通されている。 Rotary shaft 35 is inserted through the connecting pipe 42 such that at least a portion of the area protrusions 36 are formed is positioned into the connecting pipe 42. 従って、突条36間の溝を介してタンク31の内部空間と蒸発室21の内部空間とが接続される。 Therefore, the internal space and the internal space of the evaporation chamber 21 of the tank 31 through a groove between ridges 36 are connected.

図2は蓋34を開けて有機材料39をタンク31内に収容した後、蓋34を閉めた状態を示している。 2 after accommodating the organic material 39 in the tank 31 by opening the lid 34, it shows a closed state of the lid 34. 上述したようにタンク31の底面はすり鉢状になっているから、有機材料39はすり鉢下端の開口に向かって滑り落ちる。 Since the bottom of the tank 31 as described above is in a conical shape, the organic material 39 slides down toward the opening of the bowl bottom.
本発明に用いられる蒸着材料は粉体の有機材料である。 Evaporation material used in the present invention is an organic material of the powder.

突条36の表面と接続管42の内壁面との間の隙間は、その有機材料の粒径(例えば粒径100μm以上200μm以下)よりも小さくなっており、すり鉢下端に滑り落ちた有機材料39は突条36と接続管42内壁面との間の隙間を通らず、落下しない。 The gap between the surface and the inner wall surface of the connecting tube 42 of the ridge 36 is smaller than the particle size of the organic material (e.g., particle diameter 100μm or 200μm or less), organic material 39 sliding down the bowl bottom It does not pass through the gap between the connection pipe 42 in the wall and ridge 36, not falling.

また、突条36の水平面に対する角度は、回転軸35が静止した状態では、突条36と突条36の溝の間に有機材料39が入り込まない程小さくされている。 The angle with respect to the horizontal plane of the ridges 36, in the state where the rotation shaft 35 is stationary, and is smaller as the organic material 39 does not enter between the groove ridges 36 and ridges 36. 従って、回転軸35が静止した状態では、有機材料39はタンク31の開口よりも下方に移動せず、タンク31内に留まる。 Accordingly, in a state in which the rotary shaft 35 is stationary, the organic material 39 does not move downward from the opening of the tank 31, remains in the tank 31.

回転手段41は回転軸35に接続されている。 Rotating means 41 is connected to the rotary shaft 35. 突条36は中心軸37に固定されており、回転手段41の動力を回転軸35に伝達させると、中心軸37と一緒に突条36が一緒に回転し、回転軸35全体が上昇も下降もせず、接続管42に挿通された状態を維持しながら、接続管42の中心軸線を中心として回転する。 Ridge 36 is fixed to the central shaft 37, when the power is transmitted of the rotation means 41 to the rotating shaft 35, ridges 36 is rotated together with the central axis 37, the whole rotary shaft 35 is also raised lowered Mosezu, while maintaining the inserted state to the connection tube 42 to rotate about the central axis line of the connecting tube 42.

このときの回転方向は、回転軸35を螺合する雌ネジに挿入したと仮定したとき時に、回転によって先端が雌ネジから突き出る方向になっており、回転軸35が回転すると、有機材料39に突条36の斜面に沿って下向きに移動する力が加わる。 Rotational direction at this time, the rotary shaft 35 when assuming that was inserted into the screwed the female screw, the tip by the rotation has become in a direction projecting from the female screw, when the rotary shaft 35 is rotated, the organic material 39 moving force is applied downward along the slope of the ridge 36.

ここでは、回転軸35は突条36が形成された部分が、タンク31の開口よりも上方に突き出るように接続管42に挿通されており、タンク31に収容された有機材料39は突条36の斜面を滑って突条36と突条36の溝に入り込み、突条36の斜面に沿って下向きに移動する。 Here, the rotary shaft 35 is part of ridge 36 is formed, than the opening of the tank 31 is inserted through the connecting pipe 42 so as to protrude upward, the organic material 39 contained in the tank 31 is ridge 36 slipped slope enters into the groove of the protrusion 36 and the protrusion 36, moves downward along the slope of the ridge 36.

突条36の斜面は予め機械的に研磨されている。 Slopes of ridges 36 is previously mechanically polished. 回転軸35の少なくとも突条36はSi 34を主成分とするセラミック材料で構成されている。 At least protrusions 36 of the rotary shaft 35 is made of a ceramic material mainly composed of Si 3 N 4. Si 34はアルミナ等に比べて機械的強度が高いので、破損することなく機械的に研磨され、斜面が平滑になっている。 Since Si 3 N 4 is the mechanical strength is higher than that of alumina, etc., is mechanically polished without breaking, slope becomes smooth.
従って、突条36間の溝を通る有機材料39は、途中で詰まることなく移動し、接続管42の下端から落下して蒸発室21内に供給される。 Accordingly, the organic material 39 through the groove between ridges 36 move without clogging in the middle, to fall from the lower end of the connecting tube 42 is supplied to the evaporation chamber 21.

有機材料39は途中で詰まることが無いから、回転軸35の回転量と、蒸発室21に供給される有機材料39の量(例えば質量)との関係は変らない。 Since the organic material 39 is never clogged on the way, and the rotation amount of the rotary shaft 35, does not change the relationship between the amount (e.g., weight) of the organic material 39 to be supplied to the evaporation chamber 21. その関係から、必要量の有機材料39を蒸発室21に供給するために、必要な回転軸35の回転量が分かる。 From that relationship, in order to supply the organic material 39 of the required amount of the evaporation chamber 21, the rotation amount of the rotary shaft 35 is seen necessary.

高温体22は高温容器22bと、高温容器22bの底面略中央位置に設けられた突部22aとを有しており、高温容器22bの開口は接続管42下端の開口よりも大きく、突部22aの先端は接続管42下端の開口よりも小さくなっている。 Hot body 22 and the high temperature vessel 22b, has a protrusion 22a provided on the bottom surface substantially central position of the high temperature vessel 22b, the opening of the high temperature vessel 22b larger than the opening of the connecting tube 42 bottom, projections 22a the tip is smaller than the opening of the connecting tube 42 the lower end.

高温体22は、高温容器22bの開口が上側に向けられ、突部22a先端の中心が、接続管42の中心軸線の鉛直下方に位置するように、蒸発室21内部に配置されており、接続管42の下端開口の縁は、高温容器22bの開口の縁と、突部22aの先端外周との間の、リング状の領域の真上に位置する。 Hot body 22, the opening of the high temperature vessel 22b is directed to the upper side, the center of the projection 22a tip, so as to be positioned vertically below the central axis of the connecting tube 42 is disposed inside the evaporation chamber 21, connected edge of the lower end opening of the tube 42, the edge of the opening of the high temperature vessel 22b, between the outer periphery of the tip end of the projections 22a, positioned directly above the ring-shaped region.

接続管42の下端から落下する有機材料39は、高温容器22b側面と突部22a側面の間に、突部22aを取り囲むように配置されるから、後述するように高温体22を加熱した時に、有機材料39の加熱効率が高い。 Organic material 39 falling from the lower end of the connecting tube 42, during high temperature vessel 22b side and the projection 22a side, because is disposed so as to surround the protrusions 22a, upon heating the hot body 22 as will be described later, high heating efficiency of the organic material 39.

加熱手段24は、蒸発室21の周囲に巻き回されたコイル25と、コイル25に接続された交流電源26とを有しており、交流電源26からコイル25に交流電圧を印加すると、蒸発室21の内部空間に電磁場が形成される。 Heating means 24, a coil 25 wound around the evaporation chamber 21 has a AC power source 26 connected to the coil 25, when an AC voltage is applied from the AC power source 26 to the coil 25, the evaporation chamber electromagnetic field is formed in the inner space 21.

回転軸35の下端は蒸発室21の天井よりも下方に突き出され、回転軸35の下端部分(ここでは中心軸37の下端部分)と高温体22は、蒸発室21の内部空間、即ち、電磁場が形成される電磁場形成空間に位置する。 The lower end of the rotary shaft 35 protrudes below the ceiling of the evaporation chamber 21, the hot body 22 (lower end portion of the central shaft 37 in this case) the lower end portion of the rotary shaft 35, the internal space of the evaporation chamber 21, i.e., the electromagnetic field There located field forming space formed.
突部22aと高温容器22bは、それぞれステンレス等の高抵抗の導電材料で構成されている。 Projections 22a and the high temperature vessel 22b is made of a conductive material of the high resistance of the respective stainless steel.

これに対し、中心軸37は突条36と同じセラミック材料で構成されており、そのセラミック材料は絶縁性である。 In contrast, the central shaft 37 is composed of the same ceramic material as the ribs 36, the ceramic material is insulating. 従って、回転軸35の電磁場形成空間に位置する部分は絶縁性であり、蒸発室21内部に電磁場を形成すると、高温体22は誘導加熱されるが、回転軸35は誘導加熱されない。 Therefore, the portion located field forming space of the rotary shaft 35 is an insulating, to form an electromagnetic field inside the evaporation chamber 21, but hot body 22 is induction-heated, rotating shaft 35 is not induced heating.

真空槽11と、放出装置50と、タンク31と、蒸発室21はそれぞれ真空排気系9に接続されている。 A vacuum chamber 11, a discharge device 50, a tank 31, the evaporation chamber 21 is respectively connected to a vacuum evacuation system 9.
真空排気系9によって蒸発室21内部に真空雰囲気を形成した状態で、加熱した高温体22に有機材料39を配置すると、蒸発室21の内部に有機材料39の蒸気が発生する。 While a vacuum atmosphere inside the evaporation chamber 21 by the vacuum evacuation system 9, placing the organic material 39 to the heated hot body 22, the vapor of the organic material 39 is generated inside the evaporation chamber 21. 上述したように、回転軸35は誘導加熱されないから、回転軸35に接触する有機材料39は蒸発せず、接続管42内やタンク31内に蒸気が発生しない。 As described above, since the rotary shaft 35 is not induced heating, the organic material 39 in contact with the rotary shaft 35 is not evaporated, the steam is not generated in the connection pipe 42 and tank 31.

蒸発室21は切替装置65を介して放出装置50に接続されている。 Evaporation chamber 21 is connected to the discharge device 50 through the switching device 65.
切替装置65は一端が蒸発室21に接続され、他端が放出装置50に接続された配管59a〜59cと、配管59a〜59cの一端と他端の間に設けられたバルブ57a〜57cとを有している。 Switching device 65 has one end connected to the evaporation chamber 21, a pipe 59a~59c other end of which is connected to the discharge device 50, and a valve 57a~57c provided between the one end and the other end of the pipe 59a~59c It has.

放出装置50内部に真空雰囲気を形成し、蒸発室21内に蒸気を発生させた状態で、バルブ57a〜57cを空け、蒸発室21を放出装置50に接続すると、圧力差により、蒸気が配管59a〜59cを通って放出装置50へ移動する。 The vacuum atmosphere is formed inside the discharging unit 50, in a state in which steam is generated in the evaporation chamber 21, spaced valves 57a-57c, when connecting the evaporation chamber 21 to the discharge device 50, the pressure difference, the vapor piping 59a ~59c moves to the discharging unit 50 through. バルブ57a〜57cを閉状態にすると蒸発室21が放出装置50から遮断され、蒸気が移動しない。 The evaporation chamber 21 and the valve 57a~57c to the closed state is shut off from the discharge device 50, the steam does not move.

ここでは、1つの放出装置50に複数の供給装置20a〜20cが接続されており、開状態にするバルブ57a〜57cを選択することで、所望の供給装置20a〜20cの蒸発室21を放出装置50へ接続し、該蒸発室21で発生する蒸気を放出装置50へ供給することができる。 Here, is connected to a plurality of supply devices 20a~20c to one discharging unit 50, by selecting the valve 57a~57c to the open state, release device vaporization chamber 21 of a desired supply device 20a~20c connect to 50, it can be supplied to the steam release device 50 that occur in the evaporated Hatsushitsu 21.

放出装置50は、箱状の放出容器(筐体)51と、放出容器51の内部に配置された供給管(ヘッダ)52とを有しており、放出装置50に供給された蒸気は供給管52に供給される。 Discharging unit 50 includes a box-shaped release container (housing) 51 has a supply pipe (header) 52 disposed inside the discharge vessel 51, steam supplied to the discharging unit 50 includes the supply pipe It is supplied to the 52.
供給管52には噴出口53が形成されており、供給管52に供給された蒸気は噴出口53から放出容器51内部に放出される。 The feed tube 52 is spout 53 is formed, the steam supplied to the supply pipe 52 is discharged to the internal discharge vessel 51 from the spout 53.

放出装置50には放出口55が形成され、放出装置50は、各放出口55が真空槽11の内部空間に露出するように、一部又は全部が真空槽11の内部に配置されており、放出容器51内部に放出された蒸気は、放出口55から真空槽11内部に放出される。 The discharge device 50 outlet 55 is formed, discharging unit 50, as the discharge port 55 is exposed to the inner space of the vacuum chamber 11, and part or all disposed inside the vacuum chamber 11, vapor released inside release the container 51 is discharged from the discharge port 55 into the vacuum chamber 11.

真空槽11内部の基板ホルダ15が配置され、真空槽11に搬入された基板81は基板ホルダ15に配置される。 Vacuum chamber 11 within the substrate holder 15 is disposed, the substrate 81 is carried into the vacuum chamber 11 is disposed on the substrate holder 15. 基板ホルダ15は放出装置50上に位置しており、基板ホルダ15に配置された基板81は放出装置50上に位置する。 Substrate holder 15 is located on the discharge device 50, a substrate 81 disposed on the substrate holder 15 is located on the discharge device 50.
基板ホルダ15に配置された基板81と放出装置50の間の位置にはマスク16が配置されている。 Mask 16 at a position between the substrate 81 and the discharge device 50 disposed on the substrate holder 15 is disposed. マスク16は板状の遮蔽部18と、遮蔽部18に形成された開口17とを有している。 Mask 16 has a plate-shaped shielding portion 18 and an opening 17 formed in the shielding portion 18.

基板ホルダ15とマスク16のいずれか一方又は両方はアライメント手段60に接続されている。 Either or both of the substrate holder 15 and the mask 16 is connected to the alignment means 60. アライメント手段60は、基板81とマスク16に形成されたアライメントマークを観察しながら、基板ホルダ15と一緒に、基板81をマスク16に対して相対的に移動させ、位置合わせを行う。 Alignment means 60, while observing the alignment marks formed on the substrate 81 and the mask 16, together with the substrate holder 15, by relatively moving the substrate 81 relative to the mask 16, performs alignment.

次に、本発明の蒸着装置10bを用いて実際の成膜を行う前の予備試験について説明する。 Next, a description will be given preliminary test prior to the actual deposition using a vapor deposition apparatus 10b of the present invention.
通常、成膜すべき薄膜の膜厚は予め決められている。 Usually, the film thickness of the thin film to be deposited is predetermined.

予備試験は、実際の成膜に用いるものと同じ有機材料39をタンク31に収容しておき、真空雰囲気の圧力、高温体22の加熱温度等の成膜条件を、実際の成膜工程と同じにし、蒸発室21に有機材料39を供給して蒸気を発生させ、放出装置50上に基板(成膜工程でマスク16を使用するならばマスク16と基板)とを配置した状態で、その蒸気を放出装置50から放出させて薄膜を形成し、蒸発室21内への有機材料39の供給量と、成膜された薄膜の膜厚とを調べ、決められた膜厚の成膜に必要な、有機材料39の供給量(必要供給量)を求める。 Preliminary studies leave housing the same organic material 39 and that used for the actual film formation in the tank 31, the pressure of the vacuum atmosphere, the deposition conditions such as heating temperature of the hot body 22, identical to the actual film forming process to the organic material 39 is supplied to generate steam in the evaporation chamber 21, the (mask 16 if using a mask 16 and the substrate in the deposition step) and in a state arranged substrate on the discharge device 50, the vapor was allowed to discharge from the discharge device 50 to form a thin film, and the supply amount of the organic material 39 into the vaporization chamber 21, examines the thickness of the deposited film, required for film formation was determined thickness , the supply amount of the organic material 39 (required supply quantity) is determined.

上述したように、回転軸35の回転量と、蒸発室21への有機材料39の供給量との関係は変らないから、その関係から、有機材料39を必要供給量供給するための回転軸35の回転量(必要回転量)が分かる。 As described above, the rotation amount of the rotary shaft 35, since not change the relationship between the supply amount of the organic material 39 to the evaporation chamber 21, from the relationship, shaft for supplying necessary supply amount of the organic material 39 35 It is seen in the rotation (required rotation amount).

次に、予備試験の結果に基づいて、本発明の蒸着装置10bで発光層を成膜する工程について説明する。 Then, based on the results of preliminary tests, steps of forming the light emitting layer at a deposition apparatus 10b of the present invention.
放出装置50に接続された供給装置20a〜20cの数は、発光層を構成する着色層の色の数と同じかそれ以上である。 The number of connected feeder 20a~20c the discharging unit 50 is greater than or equal to the number of colors of colored layers constituting the light emitting layer. 例えば、着色層は赤、緑、青色の3色である。 For example, the colored layer is red, green, and blue three colors.

有機材料39は、主成分である有機発光材料(ホスト)に、着色層と同じ色の有機色素がドーパントとして添加された混合物である。 The organic material 39, the organic light emitting material which is a main component (host) is a mixture organic dye is added as a dopant of the same color as the colored layer.
供給装置20a〜20cのタンク31に異なる色の有機材料39をそれぞれ収容してから、タンク31の蓋34を閉じ、タンク31と、蒸発室21と、真空槽11と、放出装置50と、切替装置65を真空排気し、所定圧力(例えば10 -5 Pa)の真空雰囲気を形成しておく。 Different colors of organic materials 39 to the tank 31 of the feeder 20a~20c from houses respectively, close the lid 34 of the tank 31, a tank 31, the evaporation chamber 21, a vacuum chamber 11, a discharge device 50, switching the apparatus 65 is evacuated in advance to form a vacuum atmosphere of a predetermined pressure (e.g. 10 -5 Pa).

真空槽11と、タンク31と、放出装置50と、蒸発室21の真空雰囲気を維持しながら、各供給装置20a〜20cの蒸発室21をそれぞれ放出装置50から遮断し、各高温体22を所定温度(例えば200℃〜300℃)に加熱しておく。 Given the vacuum chamber 11, a tank 31, a discharge device 50, while maintaining the vacuum atmosphere in the evaporation chamber 21, the evaporation chamber 21 of each feeder 20a~20c shielded from each emitting device 50, each high-temperature body 22 previously heated to a temperature (e.g. 200 ° C. to 300 ° C.).
赤、緑、青のうち、いずれか1色を第一の色、残りの二色のうち、一方を第二の色、他方を第三の色とする。 Red, green, among the blue, any one color first color, of the remaining two colors, to one of the second color, the other as the third color.

第一の色の有機材料39が収容された供給装置20aの、蒸発室21に接続された真空排気系9のバルブを閉じた状態で、その供給装置20aの回転軸35を必要回転量回転させ、予備試験で求めた必要供給量の有機材料39を、所定温度に加熱した高温体22に配置し、必要供給量の有機材料39の蒸気を発生させる。 The first feed device 20a to the organic material 39 of the color is accommodated, in the closed state of the valve of the evaporation chamber 21 connected to vacuum evacuation system 9, is rotated required rotation amount rotation shaft 35 of the feeder 20a the organic material 39 necessary supply amount determined in the preliminary test, placed in a high temperature body 22 heated to a predetermined temperature, to generate steam necessary supply amount of the organic material 39.
放出装置50に真空排気系9が接続されている場合は、放出装置50に接続された真空排気系9のバルブを閉じておく。 When the vacuum evacuation system 9 is connected to the discharge device 50 is kept closing the valve of the vacuum evacuation system 9 connected to the discharge device 50.

有機材料39を高温体22に配置してから所定時間経過後か、蒸発室21内の圧力が所定圧力に達したら、蒸発室21に接続された真空排気系9のバルブと、放出装置50に接続された真空排気系9のバルブをそれぞれ閉じたまま、第一の色の有機材料39の蒸気が発生した蒸発室21を放出装置50に接続し、その蒸気を放出口55から放出させる。 The organic material 39 or after a predetermined time has elapsed since the disposed hot body 22, when the pressure in the evaporation chamber 21 reaches a predetermined pressure, the valve of the vacuum evacuation system 9 connected to the evaporation chamber 21, the discharge device 50 connected evacuation system 9 of the valve remains closed, respectively, the evaporation chamber 21 where the vapor of the first color of the organic material 39 is generated by connecting the discharge device 50, to release the vapor from the discharge port 55.

少なくとも、放出口55からの蒸気の放出が開始する前に、基板81を真空槽11内部に搬入して基板ホルダ15に配置し、第一の色の着色層が形成されるべき領域が開口17と対面するよう位置合わせをしておく。 At least, prior to releasing the steam starting from discharge openings 55, arranged on the substrate holder 15 and carries the substrate 81 inside the vacuum chamber 11, the area to the colored layer is formed of a first color opening 17 keep aligned to face the.

蒸気の放出開始から所定時間が経過するか、蒸発室21の内部の圧力が所定圧力以下になり、必要供給量の有機材料39から発生した蒸気が放出口55から放出されなくなる成膜終了時まで、位置合わせしたマスク16と基板81を放出装置50上に配置しておくと、基板81の決められた領域に、決められた膜厚の第一の色の着色層が形成される。 Or a predetermined time elapses after release initiation of vapor pressure inside the vaporization chamber 21 is below a predetermined pressure, until completion of the film formation time no longer released steam generated from the discharge port 55 from the required supply amount of the organic material 39 , idea to place the mask 16 and the substrate 81 are aligned on the discharge device 50, in a region with a predetermined substrate 81, a colored layer of the first color-determined thickness is formed.

決められた膜厚の着色層が形成されたら、第一の色の有機材料39の蒸気を発生させた蒸発室21を放出装置50から遮断し、該蒸発室21と、真空槽11と、放出装置50とを真空排気して、第一の色の有機材料39の蒸気を蒸着装置10b内から排出する。 When the colored layer-determined thickness is formed, the evaporation chamber 21 which generated the vapor of the first color of the organic material 39 is shut off from the discharge device 50, and the evaporated Hatsushitsu 21, the vacuum chamber 11, release a device 50 is evacuated to discharge the vapor of the first color of the organic material 39 from the deposition apparatus 10b.

次に、第二の色の着色層が形成されるべき領域と、開口17とが対面するように基板81とマスク16を位置合わせする。 Next, the region where the colored layer of the second color is formed, to align the substrate 81 and the mask 16 so that the opening 17 is facing.
第一の色の有機材料39が収容された供給装置20aに代え、第二の色の有機材料39が収容された供給装置20bで、第一の色の着色層を成膜した時と同じ工程で、必要供給量の第二の色の有機材料39の蒸気を発生させ、該蒸気を放出装置50から放出させる。 Instead of the first feed device 20a to the organic material 39 of the color is accommodated in a second color supplying device 20b to the organic material 39 is housed in the same process as when forming a colored layer of a first color in, to generate the required amount of steam supplied second color of the organic material 39 to release gas the evaporated from the discharge device 50. 蒸気の放出開始から成膜終了時まで、位置合わせしたマスク16と基板81を放出装置50上に配置しておくと、第二の色の着色層が形成されるべき領域に、決められた膜厚の第二の色の着色層が形成される。 From the discharge start of the steam until the completion of film formation, idea to place the mask 16 and the substrate 81 are aligned on the discharge device 50, the second color region where the colored layer is formed of, as determined film second color colored layer thickness is formed.

成膜終了後、蒸着装置10bから蒸気を排出し、第三の色の着色層が形成されるべき領域と、開口とが対面するよう位置合わせし、第三の色の有機材料39が収容された供給装置20cで、必要供給量の第三の色の有機材料39の蒸気を発生させ、該蒸気を放出装置50から放出させ、蒸気の放出開始から成膜終了まで、位置合わせしたマスク16と基板81を放出装置50上に配置しておくと、第三の色の着色層が形成されるべきに決められた膜厚の第三の色の着色層が形成され、基板81表面上に3色の着色層からなる発光層が形成される。 After completion of film formation, the steam discharged from the vapor deposition apparatus 10b, and the region where the colored layer of a third color is formed, aligned so that the opening is facing the third color of the organic material 39 is accommodated in feeder 20c, need to generate steam supply amount of the third color of the organic material 39, to release the gas the evaporated from the discharge device 50, from the discharge start of the steam up to completion of film formation, a mask 16 which is aligned If you leave placing a substrate 81 onto a release device 50, the colored layer of the third color is the third color colored layer is formed of a thickness that is determined to be formed, 3 to the substrate 81 on the surface emitting layer is formed consisting of the color coloring layer.

発光層が形成された基板81を基板ホルダ15から取り外して真空槽11外部に搬出し、新たな基板81を真空槽11内部に搬入して基板ホルダ15に配置する基板交換と、上述した発光層の形成とを繰り返せば、複数枚の基板81に発光層を形成することができる。 Unloaded in the vacuum chamber 11 outside by removing the substrate 81 in which the light-emitting layer is formed from the substrate holder 15, a substrate replacement of placing the substrate holder 15 to load the new substrate 81 inside the vacuum chamber 11, the light-emitting layer as described above by repeating the formation, it is possible to form the light-emitting layer on a plurality of substrates 81.

蒸発室21の内部空間に露出する壁面(例えば回転軸35の先端や蒸発室21の内壁面)の温度が低いと、蒸発室21で発生した蒸気が析出して析出物が生じる。 When the temperature of the wall surface exposed to the interior space of the evaporation chamber 21 (e.g., inner wall surface of the tip and the evaporation chamber 21 of the rotary shaft 35) is low, precipitate vapor is precipitated generated in the evaporation chamber 21 occurs. 複数枚の基板81の成膜処理を行った後は析出物の層が厚くなり、その析出物が高温体22に落下すると、高温体22に必要供給量を超える有機材料39が配置され、着色層の膜厚が決められた膜厚を超えてしまう。 Thickens layer of precipitates after a film forming process of a plurality of substrates 81, when the deposit falls into hot body 22, an organic material 39 more than necessary supply amount to the hot body 22 is arranged, colored exceeds the thickness of the film thickness of the layers was determined.

本発明では、高温体22が放出する赤外線(輻射熱)が、蒸発室21内部に露出する壁面全部に入射するようになっており、露出する壁面全部が有機材料39が蒸発する温度以上に加熱される。 In the present invention, infrared hot body 22 is released (radiant heat) is adapted to enter the entire wall surface which is exposed to the inside vaporization chamber 21, all walls exposed is heated above a temperature at which the organic material 39 is evaporated that. 従って、蒸気が析出せず、着色層が正確に決められた膜厚となる。 Thus, the vapor does not precipitate, a thickness of the colored layer is accurately determined.

上述したように中心軸37は突条36と同じ、Si 34を主成分とするセラミック材料で構成されている。 Central axis 37 as described above is configured the same as the projection 36, the Si 3 N 4 ceramic material mainly. 該セラミック材料は断熱性が高いので、回転軸35の先端(中心軸37の先端)が高温になっても、中心軸37の他の部分や突条36は有機材料39が蒸発する温度には到達せず、突条36に接触する有機材料39は蒸発しない。 Since the ceramic material has a high heat insulating property, the temperature tip of the rotary shaft 35 (the tip of the center shaft 37) is also heated to a high temperature, other portions or ridges 36 of the central shaft 37 in which the organic material 39 is evaporated in does not reach, the organic material 39 in contact with the protrusion 36 does not evaporate. 従って、回転軸35の回転量と、有機材料39の供給量の関係が変らない。 Accordingly, the rotation amount of the rotary shaft 35, unchanged relationship supply amount of the organic material 39.

本発明では、マスク16を放出装置50上に配置したまま複数の基板81の成膜を行うことができるが、成膜を繰り返すと、マスク16に有機材料39が付着し、成膜精度が劣化するので、予め決めた所定枚数の基板81の成膜が終了したら、マスク16を交換することが望ましい。 In the present invention, it is possible to perform the deposition of a plurality of substrates 81 while disposed in the mask 16 discharging unit 50 on, repeating the film formation, the organic material 39 is attached to the mask 16, the film formation accuracy is degraded since, upon completion of deposition of the substrate 81 of the predetermined prescribed number, it is desirable to replace the mask 16.

以上は、1つの蒸着装置10b内で複数種類の薄膜(着色層)を形成する場合について説明したが、本発明はこれに限定されず、1つの放出装置50に供給装置20a〜20cを1つだけ接続し、1種類の薄膜だけを形成することもできる。 Above has described the case of forming a plurality of kinds of thin films in a single deposition apparatus 10b (colored layer), the present invention is not limited thereto, one feeder 20a~20c to one discharging unit 50 only connected, it can be formed only one type of film.
本発明の蒸着装置10bは発光層だけでなく、ホール輸送層、ホール注入層、電子注入層、電子輸送層等、他の有機薄膜の成膜に用いることもできる。 Vapor deposition apparatus 10b of the present invention is not only light-emitting layer, a hole transport layer, hole injection layer, an electron injection layer, an electron transport layer, etc., may be used for forming other organic thin film.

1つの真空槽11内部には、1又は複数の放出装置50を配置することができる。 Inside one of the vacuum chamber 11 may be disposed one or a plurality of discharge devices 50. 1つの真空槽11内部に複数の放出装置50を配置する場合、各放出装置50から放出される蒸気が混合されないよう、放出装置50同士の距離を十分に離すか、真空槽11内部に蒸気の流れを遮蔽する遮蔽板を設けることが望ましい。 When a plurality of discharge device 50 within a single vacuum chamber 11, so that vapor released from the discharge device 50 is not mixed, or adequate separation distance between the discharging unit 50, inside of the steam vacuum chamber 11 it is desirable to provide a shielding plate for shielding the flow.

以上は、有機材料39としてホストとドーパントとが予め混合されたものを用いる場合について説明したが、本発明はこれに限定されない。 Above, has been described to use a host and a dopant is mixed in advance as organic material 39, the present invention is not limited thereto.
例えば、1つの放出装置50に複数の供給装置20a〜20cを接続しておき、ホストとドーパントをそれぞれ異なる供給装置20a〜20cのタンク31に収容する。 For example, in advance by connecting a plurality of supply devices 20a~20c to one discharging unit 50, to accommodate a host and a dopant into the tank 31 of the different feeder 20a~20c respectively.

ホストの蒸気とドーパントの蒸気を異なる供給装置20a〜20cで発生させ、それらの蒸気を同じ放出装置50に一緒に供給すれば、蒸気は放出装置50内部で混合されるから、放出口55からはホストの蒸気とドーパントの蒸気の混合蒸気が放出され、ホストとドーパントを両方含有する薄膜が成長する。 The vapor of the host vapor and the dopant is generated by the different supply devices 20 a to 20 c, if supplied with their vapors into the same discharge apparatus 50, since the steam is mixed within the discharge device 50, from the discharge port 55 mixed vapor of steam host vapor and the dopant is released, a thin film containing both the host and the dopant is grown.

放出装置50と、基板ホルダ15のいずれか一方又は両方を揺動手段58に接続しておき、着色層を成長させる間、基板81とマスク16を相対的に静止させた状態で、放出装置50と基板ホルダ15のいずれか一方又は両方を水平面内で往復移動又は円運動させ、基板ホルダ15に保持された基板81を基板ホルダ15と一緒に、放出装置50に対して移動させれば、着色層の膜厚が均一になる。 A discharging unit 50, should be tied either or both of the substrate holder 15 in the rocking means 58, while growing the colored layer, in a state where the substrate 81 and the mask 16 are relatively stationary, release device 50 and one or both of the substrate holder 15 is reciprocated or circular movement in a horizontal plane, the substrate 81 held by the substrate holder 15 together with the substrate holder 15, is moved relative to the discharge device 50, the colored the thickness of the layer is uniform.

基板ホルダ15と放出装置50との相対的な往復移動の方向は特に限定されないが、例えば、供給管52が、所定間隔を空けて略平行に配置された複数本の分岐管を有する場合は、基板81と放出装置50を、該分岐管と交差する方向に水平面内で相対的に移動させる。 But not relative direction of reciprocation particular limitation to the substrate holder 15 and the discharge device 50, for example, when the supply pipe 52 has a plurality of branch pipes which are arranged substantially parallel to and at a predetermined interval, the substrate 81 and the discharge device 50, is relatively moved in a horizontal plane in a direction intersecting with the branch pipe.

供給管52の噴出口53は、放出容器51の放出口55と対面しない位置に設ければ、噴出口53から噴出される蒸気は、放出容器51に充満してから放出口55から放出されるため、放出速度が安定する。 Spout 53 of the supply pipe 52, be provided at a position not facing the outlet 55 of the discharge vessel 51, steam ejected from the ejection port 53 is discharged from the discharge port 55 after filling the discharge vessel 51 Therefore, the release rate is stabilized. 具体的には、放出口55が放出容器51の天井に設けられている場合は、噴出口53は供給管52の放出容器51の底面又は側面と対向する部分に設ける。 Specifically, if the discharge port 55 is provided in the ceiling of the discharge vessel 51, spout 53 is provided on the bottom or side portion facing the release chamber 51 of the supply pipe 52.

放出装置50(ここでは放出容器51)の放出口55が形成された面(前面)を、基板81よりも大面積にし、放出口55を前面に所定間隔を空けて分散配置しておけば、基板81を放出装置50上に位置させたまま、基板81表面全部に亘って薄膜を形成することができる。 A surface discharge openings 55 are formed in the discharge device 50 (here desorption chamber 51) (front), and the larger area than the substrate 81, if and distributed at predetermined intervals the outlet 55 to the front, the substrate 81 while keeping the position on the release device 50, it is possible to form a thin film over the entire substrate 81 surface. この方法によれば、基板81を搬送しながら成膜する必要がなく、真空槽11内での基板81の移動距離が短くなるので、基板81の搬送によるダストの発生量が少ない。 According to this method, it is not necessary to form while conveying the substrate 81, the moving distance of the substrate 81 in the vacuum chamber 11 is reduced, a small amount of generation of dust due to the transport of the substrate 81.

放出装置50の温度が低いと、蒸気が放出装置50内で析出してしまうので、放出装置50の壁面(例えば放出容器51の壁面)にヒーター68を取り付け、ヒーター68で放出装置50を加熱しながら、蒸気を放出装置50に供給することが望ましい。 When the temperature of the discharging unit 50 is low, since the vapor will be deposited in the discharge device 50, a heater 68 attached to the wall of the discharge device 50 (e.g., wall surface of the discharge vessel 51), heating the discharge device 50 with a heater 68 while, it is desirable to supply the steam to the discharge device 50.

このとき、放出装置50からの輻射熱でマスク16が加熱されると、熱膨張が起こり、成膜精度が下がるので、放出装置50とマスク16との間に断熱材(冷却板)57を配置し、ヒーター68を冷却板57で覆うことが望ましい。 At this time, the mask 16 is heated by radiant heat from the discharge device 50, occurs thermal expansion, since the film formation accuracy is lowered, the heat insulating material (cooling plate) 57 is disposed between the discharging unit 50 and the mask 16 , it is desirable to cover the heater 68 in the cooling plate 57.

冷却板57の放出口55上の位置に、放出口55が露出する開口(蒸気放出口)を設けておき、該開口の大きさを、放出口55から放出される蒸気が接触しない程度に大きくすれば、蒸気が冷却板57に析出しない。 The position on the outlet 55 of the cooling plate 57, may be provided an opening (steam outlet) of outlet 55 is exposed, increasing the size of the opening, to the extent that vapor released does not contact the outlet 55 if steam is not deposited on the cooling plate 57.
高温体22の加熱は誘導加熱に限定されず、加熱手段からの熱伝導で加熱してもよい。 Heating of the hot body 22 is not limited to induction heating, it may be heated by heat conduction from the heating means. 更に、有機材料39にレーザービーム等を照射して、有機材料39を直接加熱してもよい。 Furthermore, by irradiating a laser beam or the like in an organic material 39 may be heated organic material 39 directly.
高温体22を誘導加熱以外の方法で加熱する場合や、回転軸35全部が電磁場形成空間の外部にある場合や、中心軸37は誘導加熱可能な材料であっても構わない。 If you heat the hot body 22 by a method other than induction heating, or if the whole rotary shaft 35 is outside the field forming space, the central shaft 37 may be an induction heatable material.

しかし、回転軸35全体の強度を考慮すると、突条36と中心軸37を同じセラミック材料で一体成形することが望ましい。 However, considering the strength of the whole rotary shaft 35, it is desirable to integrally mold the ridges 36 and the central axis 37 of the same ceramic material. 具体的には、回転軸35は、型に溶融したセラミック材料を流し込み、固めた後、型がら取り外し、表面を機械的に研磨して形成される。 Specifically, the rotary shaft 35, pouring a ceramic material which is melted in a mold, after hardened, remove mold husk, is formed by polishing the surface mechanically.

セラミック材料はSi 34を主成分とするものに限定されないが、機械的強度と、絶縁性の両方の機能を考慮すると、本発明には、Si 34を主成分とするセラミック材料が最も適している。 Although the ceramic material is not limited to those based on Si 3 N 4, and mechanical strength, in consideration of the functions of both insulating, in the present invention is a ceramic material mainly composed of Si 3 N 4 It is most suitable.

蒸発室21を直接真空排気系に接続せずに、蒸発室21を放出装置50に接続した状態で、真空槽11を真空排気することで、蒸発室21内部を真空排気してもよい。 Without connecting the evaporation chamber 21 to direct evacuation system, the evaporation chamber 21 while connected to the discharge device 50, the vacuum chamber 11 by evacuating the internal evaporation chamber 21 may be evacuated. この場合、蒸発室21から放出装置50を遮断することで、蒸発室21内部の真空排気を停止させてから、有機材料39を蒸発室21内部で加熱する。 In this case, by blocking the release device 50 from the evaporation chamber 21, stop the evaporation chamber 21 inside the vacuum evacuation, heating the organic material 39 inside the vaporization chamber 21.

高温体22の設置場所は特に限定されず、有機材料39を高温体22に配置可能であれば、接続管42下端の斜め下方に配置してもよい。 Location of the hot body 22 is not particularly limited, disposed if the organic material 39 in the hot body 22 may be disposed obliquely below the connection pipe 42 bottom. 高温体22の形状も特に限定されず、有機材料39を配置可能であれば板状であってもよい。 The shape of the high-temperature bodies 22 is not particularly limited and may be an organic material 39 disposed possible plate.
マスク16は各着色層の成膜で同じものを用いてもよいし、変えてもよい。 Mask 16 may be the same as those used in film formation of each color layer may be changed.
着色層の色の組合わせは赤、青、緑に限定されず、例えば、赤、青、黄等他の組合わせであってもよい。 Combination red color of the colored layer, the blue is not limited to green, for example, red, blue, may be yellow, etc. Other combinations. また、着色層の色の数は3色に限定されず、2色又は4色以上であってもよい。 Further, the number of color of the colored layer is not limited to three colors and may be two-color or four or more colors.

以上は、第一、第二の薄膜(着色層)を積層せずに異なる領域にそれぞれ形成する場合について説明したが、本発明はこれに限定されず、マスクを用いないか、マスクの開口と基板との位置関係を変えずに2種以上の有機薄膜(例えば、ホール輸送層、ホール注入層、電子輸送層、電子注入層等)を成膜し、各有機薄膜を同じ場所に積層させることもできる。 Above, first, the case has been described where the respectively formed in different regions without stacking the second thin film (colored layer), the present invention is not limited to this, or does not use a mask, and the openings of the mask two or more organic thin film without changing the positional relationship between the substrate (e.g., a hole transport layer, hole injection layer, an electron transport layer, electron injection layer) was deposited, thereby laminating the organic thin film in the same location It can also be.

本発明に用いる蒸着材料は有機材料に限定されず、無機材料を用いることもできる。 Evaporation material used in the present invention is not limited to organic materials, it is also possible to use an inorganic material. 蒸発室21から蒸気を放出装置50に供給する際、蒸発室21にキャリアガス(例えばN 2 )を導入すれば、蒸気の供給効率が高くなるが、着色層のような有機薄膜を成膜する場合には、キャリアガスが有機薄膜に取り込まれる虞があるので好ましくない。 When supplying steam to the discharge device 50 from the evaporation chamber 21, by introducing a carrier gas (e.g. N 2) to the evaporation chamber 21, the supply efficiency of the steam is high, forming an organic thin film such as a colored layer case is not preferable because the carrier gas is likely to be incorporated into the organic thin film.

成膜装置の一例を説明するための模式的な平面図 Schematic plan view for explaining an example of a film forming apparatus 本発明の蒸着装置の模式的な斜視図 Schematic perspective view of a vapor deposition apparatus of the present invention 本発明の蒸着装置の断面図 Cross-sectional view of a vapor deposition apparatus of the present invention 従来技術の蒸着装置を説明するための断面図 Sectional view for explaining a prior art deposition apparatus

符号の説明 DESCRIPTION OF SYMBOLS

10b……蒸着装置 11……真空槽 15……基板ホルダ 16……マスク 20a〜20c……供給装置 21……蒸発室 31……タンク 35……回転軸 36……突条 37……中心軸 39……有機材料 42……接続管 50……放出装置 81……基板 10b ...... deposition apparatus 11 ...... vacuum tank 15 ...... substrate holder 16 ...... mask 20 a to 20 c ...... feeder 21 ...... vaporization chamber 31 ...... tank 35 ...... rotary shaft 36 ...... ridges 37 ...... central axis 39 ...... organic material 42 ...... connecting pipe 50 ...... emitting device 81 ...... substrate

Claims (4)

  1. 底面に開口が形成されたタンクと、 A tank having an opening at a bottom surface,
    一端が前記タンクの開口に接続され、他端が前記タンクの外部空間に露出された接続管と、 One end connected to the opening of the tank, the connecting pipe whose other end is exposed to the external space of the tank,
    前記接続管に挿入された回転軸と、 A rotary shaft inserted into the connection tube,
    前記回転軸を回転させる回転手段と、 And rotating means for rotating the rotary shaft,
    前記回転軸は中心軸と、前記中心軸の周囲に螺旋状に形成された突条とを有し、 The rotary shaft having a central axis, and a protrusion formed in a spiral shape around the central axis,
    前記突条間の溝を介して、前記タンクの内部空間が、前記接続管の他端が露出する外部空間に接続された供給装置であって、 Through the groove between the ridges, the internal space of the tank, a supply device connected to the external space to which the other end of the connection pipe is exposed,
    前記突条はSi 34を主成分とするセラミック材料で構成された供給装置。 The ribs supply device constituted by a ceramic material mainly composed of Si 3 N 4.
  2. 前記中心軸は前記突条と同じ前記セラミック材料で構成された請求項1記載の供給装置。 The central axis supply apparatus according to claim 1 which is composed of the same the ceramic material and the ridges.
  3. コイルと、前記コイルの内側の電磁場形成空間に位置する高温体と、前記コイルに接続された交流電源とを有し、 A coil and a hot body located inside the electromagnetic field forming space of the coil, and an AC power supply connected to said coil,
    前記交流電源から前記コイルに交流電圧を印加すると、前記高温体が誘導加熱される請求項2記載の供給装置であって、 When an AC voltage is applied to the coil from the AC power source, a supply apparatus according to claim 2, wherein said high-temperature body is inductively heated,
    前記中心軸の先端は前記電磁場形成空間に位置する供給装置。 The tip of the central shaft feeder positioned in the electromagnetic field forming space.
  4. 真空槽と、放出装置と、請求項3記載の供給装置とを有し、 Includes a vacuum chamber, a discharge device and a supply device according to claim 3,
    前記供給装置の前記高温体が配置された空間が、前記放出装置の内部空間に接続され、 Space where the high-temperature body is arranged in the supply device is connected to the internal space of the discharge device,
    前記放出装置には、前記真空槽の内部空間と前記放出装置の内部空間とを接続する放出口が形成された蒸着装置。 Wherein the discharge device, the vapor deposition apparatus outlet that connects the internal space of the inner space of the vacuum chamber and the discharge device is formed.
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