JP4889607B2 - Supply device, vapor deposition device - Google Patents

Supply device, vapor deposition device Download PDF

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JP4889607B2
JP4889607B2 JP2007259069A JP2007259069A JP4889607B2 JP 4889607 B2 JP4889607 B2 JP 4889607B2 JP 2007259069 A JP2007259069 A JP 2007259069A JP 2007259069 A JP2007259069 A JP 2007259069A JP 4889607 B2 JP4889607 B2 JP 4889607B2
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vapor deposition
discharge device
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organic material
vapor
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JP2009087869A (en
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敏夫 根岸
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Ulvac Inc
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本発明は蒸着装置に関する。   The present invention relates to a vapor deposition apparatus.

有機ＥＬ素子は近年最も注目される表示素子の一つであり、高輝度で応答速度が速いという優れた特性を有している。有機ＥＬ素子は、ガラス基板上に赤、緑、青の三色の異なる色で発色する発光領域が配置されている。発光領域は、アノード電極膜、ホール注入層、ホール輸送層、発光層、電子輸送層、電子注入層及びカソード電極膜がこの順序で積層されており、発光層中に添加された発色剤で、赤、緑、又は青に発色するようになっている。
ホール輸送層、発光層、電子輸送層等は一般に有機材料で構成されており、このような有機材料の膜の成膜には蒸着装置が広く用いられる。 The organic EL element is one of the display elements that have attracted the most attention in recent years, and has excellent characteristics such as high brightness and fast response speed. In the organic EL element, a light emitting region that emits three different colors of red, green, and blue is disposed on a glass substrate. The light emitting region is an anode electrode film, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode electrode film laminated in this order, and is a color former added in the light emitting layer. Color is red, green, or blue.
A hole transport layer, a light emitting layer, an electron transport layer, and the like are generally made of an organic material, and a vapor deposition apparatus is widely used for forming a film of such an organic material.

図４の符号２０３は、従来技術の蒸着装置であり、真空槽２１１の内部に蒸着容器２１２が配置されている。蒸着容器２１２は、容器本体２２１を有しており、該容器本体２２１の上部は、一乃至複数個の放出口２２４が形成された蓋部２２２で塞がれている。
蒸着容器２１２の内部には、粉体の有機蒸着材料２００が配置されている。 Reference numeral 203 in FIG. 4 is a conventional vapor deposition apparatus, in which a vapor deposition vessel 212 is disposed inside a vacuum chamber 211. The vapor deposition container 212 has a container main body 221, and the upper part of the container main body 221 is closed by a lid portion 222 in which one or more discharge ports 224 are formed.
A powdery organic vapor deposition material 200 is disposed inside the vapor deposition vessel 212.

蒸着容器２１２の側面と底面にはヒータ２２３が配置されており、真空槽２１１内を真空排気し、ヒータ２２３が発熱すると蒸着容器２１２が昇温し、蒸着容器２１２内の有機蒸着材料２００が加熱される。
有機蒸着材料２００が蒸発温度以上の温度に加熱されると、蒸着容器２１２内に、有機材料蒸気が充満し、放出口２２４から真空槽２１１内に放出される。 Heaters 223 are disposed on the side and bottom surfaces of the vapor deposition vessel 212, the inside of the vacuum chamber 211 is evacuated, and when the heater 223 generates heat, the vapor deposition vessel 212 is heated and the organic vapor deposition material 200 in the vapor deposition vessel 212 is heated. Is done.
When the organic vapor deposition material 200 is heated to a temperature equal to or higher than the evaporation temperature, the vapor of the organic material is filled in the vapor deposition vessel 212 and discharged from the discharge port 224 into the vacuum chamber 211.

放出口２２４の上方にはホルダ２１０が配置されており、ホルダ２１０に基板２０５を保持させておけば、放出口２２４から放出された有機材料蒸気が基板２０５表面に到達し、ホール注入層やホール輸送層や発光層等の有機薄膜が形成される。   A holder 210 is disposed above the discharge port 224. If the holder 210 holds the substrate 205, the organic material vapor discharged from the discharge port 224 reaches the surface of the substrate 205, and a hole injection layer or a hole is formed. Organic thin films such as a transport layer and a light emitting layer are formed.

有機材料蒸気を放出させながら、基板２０５を一枚ずつ放出口２２４上を通過させれば、複数枚の基板２０５に逐次有機薄膜を形成することができる。
しかし、複数枚の基板２０５に成膜するには、蒸着容器２１２内に多量の有機材料を配置する必要がある。実際の生産現場では、有機材料を２５０℃〜４５０℃に加熱しながら１２０時間以上連続して成膜処理を行うため、蒸着容器２１２内の有機蒸着材料２００は長時間高温に曝されることになり、蒸着容器２１２中の水分と反応して変質したり、加熱による分解が進行する。
その結果、初期状態に比べて有機蒸着材料２００が劣化し、有機薄膜の膜質が悪くなる。 An organic thin film can be sequentially formed on a plurality of substrates 205 by passing the substrates 205 one by one over the discharge port 224 while releasing the organic material vapor.
However, in order to form a film on a plurality of substrates 205, it is necessary to dispose a large amount of organic material in the vapor deposition container 212. In an actual production site, the organic vapor deposition material 200 in the vapor deposition vessel 212 is exposed to a high temperature for a long time because the film formation process is continuously performed for 120 hours or more while heating the organic material to 250 ° C. to 450 ° C. Thus, it reacts with moisture in the vapor deposition vessel 212 and changes its quality, or decomposition by heating proceeds.
As a result, the organic vapor deposition material 200 is deteriorated compared to the initial state, and the film quality of the organic thin film is deteriorated.

突条が螺旋状に形成された回転軸（スクリュー）を筒内で回転させることで、突条間の溝を通った有機蒸着材料が、少量ずつ加熱用の容器に供給される装置が知られており（例えば、特許文献１、３）、この装置によれば、有機蒸着材料は一度に多量に加熱されないから、有機蒸着材料が劣化し難い。
しかし、加熱用の容器を加熱する際には、回転軸も加熱されやすく、有機蒸着材料は加熱手段に到達する前に、突条間の溝で蒸発してしまい、有機蒸着材料を加熱用容器に配置することが困難になる。
特開平１０−１４０３３４号公報 特開２００６−３０７２３９号公報 特開２００７−７０６８７号公報 A device is known in which an organic vapor deposition material passing through a groove between ridges is supplied to a heating vessel little by little by rotating a rotating shaft (screw) having a ridge formed in a spiral shape in a cylinder. (For example, Patent Documents 1 and 3) According to this apparatus, since the organic vapor deposition material is not heated in large quantities at a time, the organic vapor deposition material is unlikely to deteriorate.
However, when the heating container is heated, the rotating shaft is also easily heated, and the organic vapor deposition material evaporates in the groove between the protrusions before reaching the heating means. It becomes difficult to arrange in.
Japanese Patent Laid-Open No. 10-14334 JP 2006-307239 A JP 2007-70687 A

本発明は上記課題を解決するためのものであり、その目的は、有機蒸着材料を加熱用の容器に少量ずつ配置し、効率よく成膜を行うことである。   The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to efficiently form a film by arranging organic vapor deposition materials little by little in a heating container.

上記課題を解決するために、本発明は、底面に開口が形成されたタンクと、一端が前記タンクの開口に接続され、他端が前記タンクの外部空間に露出された接続管と、前記接続管に挿入された回転軸と、前記回転軸を回転させる回転手段と、前記回転軸は中心軸と、前記中心軸の周囲に螺旋状に形成された突条とを有し、前記突条間の溝を介して、前記タンクの内部空間が、前記接続管の他端が露出する外部空間に接続された供給装置であって、前記突条はＳｉ3Ｎ4を主成分とするセラミック材料で構成された供給装置である。
本発明は供給装置であって、前記中心軸は前記突条と同じ前記セラミック材料で構成された供給装置である。
本発明は、コイルと、前記コイルの内側の電磁場形成空間に位置する高温体と、前記コイルに接続された交流電源とを有し、前記交流電源から前記コイルに交流電圧を印加すると、前記高温体が誘導加熱される供給装置であって、前記中心軸の先端は前記電磁場形成空間に位置する供給装置である。
本発明は、真空槽と、放出装置と、前記供給装置とを有し、前記供給装置の前記高温体が配置された空間が、前記放出装置の内部空間に接続され、前記放出装置には、前記真空槽の内部空間と前記放出装置の内部空間とを接続する放出口が形成された蒸着装置である。 In order to solve the above problems, the present invention provides a tank having an opening formed on a bottom surface, a connection pipe having one end connected to the opening of the tank and the other end exposed to an external space of the tank, and the connection A rotating shaft inserted into a tube; rotating means for rotating the rotating shaft; the rotating shaft having a central axis; and a ridge formed in a spiral shape around the central axis; A supply device in which the internal space of the tank is connected to an external space through which the other end of the connecting pipe is exposed, and the protrusion is made of a ceramic material mainly composed of Si 3 N 4. It is the comprised supply apparatus.
This invention is a supply apparatus, Comprising: The said center axis | shaft is a supply apparatus comprised with the said ceramic material same as the said protrusion.
The present invention includes a coil, a high-temperature body positioned in an electromagnetic field forming space inside the coil, and an AC power source connected to the coil, and when an AC voltage is applied to the coil from the AC power source, the high temperature A supply device in which a body is induction-heated, wherein a tip of the central axis is a supply device located in the electromagnetic field forming space.
The present invention includes a vacuum chamber, a discharge device, and the supply device, a space in which the high temperature body of the supply device is disposed is connected to an internal space of the discharge device, It is a vapor deposition apparatus in which the discharge port which connects the internal space of the said vacuum chamber and the internal space of the said discharge | release apparatus was formed.

尚、本発明で主成分とは、主成分とする物質を全体の５０重量％以上含有することであり、Ｓｉ3Ｎ4を主成分とするセラミック材料とは、Ｓｉ3Ｎ4を５０重量％含有するセラミック材料の意味である。 In the present invention, the main component means that 50% by weight or more of the main component is contained, and the ceramic material mainly containing Si 3 N 4 means 50% by weight of Si 3 N 4. It means the ceramic material to be contained.

回転軸に接触する蒸着材料が加熱されないので蒸着材料が変質しない。蒸着材料は回転軸の溝を通って、タンクから蒸発室へ移動する間に蒸発せず、途中で詰まることもないので、必要量の蒸着材料を正確に蒸発室に配置可能である。必要量の蒸着材料を蒸発室内に正確に配置できるから、成膜される薄膜は決められた膜厚になる。必要量の蒸着材料だけが加熱されるから、蒸着材料の劣化がおこり難い。   Since the vapor deposition material in contact with the rotating shaft is not heated, the vapor deposition material does not deteriorate. Since the vapor deposition material does not evaporate while moving from the tank to the evaporation chamber through the groove of the rotating shaft and does not clog in the middle, the necessary amount of vapor deposition material can be accurately placed in the evaporation chamber. Since the required amount of vapor deposition material can be accurately arranged in the evaporation chamber, the thin film to be formed has a predetermined thickness. Since only the necessary amount of vapor deposition material is heated, the vapor deposition material is unlikely to deteriorate.

図１の符号１は成膜装置（有機ＥＬ製造装置）の一例を示している。
成膜装置１は複数の蒸着装置１０ａ〜１０ｃを有しており、ここでは、各蒸着装置１０ａ〜１０ｃは搬送室２に接続され、蒸着装置１０ａ〜１０ｃが接続された搬送室２には、搬入室３ａと、搬出室３ｂと、処理室６と、スパッタ室７と、マスク収容室８とが接続されている。マスク収容室８内部には複数のマスクが収容されており、蒸着装置１０ａ〜１０ｃやスパッタ室７内部に配置されたマスクと定期的に交換される。 Reference numeral 1 in FIG. 1 indicates an example of a film forming apparatus (organic EL manufacturing apparatus).
The film forming apparatus 1 includes a plurality of vapor deposition apparatuses 10a to 10c. Here, the vapor deposition apparatuses 10a to 10c are connected to the transfer chamber 2, and the transfer chamber 2 to which the vapor deposition apparatuses 10a to 10c are connected includes The carry-in chamber 3a, the carry-out chamber 3b, the processing chamber 6, the sputtering chamber 7, and the mask storage chamber 8 are connected. A plurality of masks are housed in the mask housing chamber 8 and are periodically replaced with the masks disposed in the vapor deposition apparatuses 10a to 10c and the sputtering chamber 7.

真空排気系９により、搬送室２内部と、蒸着装置１０ａ〜１０ｃの内部と、処理室６内部と、スパッタ室７内部と、マスク収容室８内部と、搬入室３ａ内部と、搬出室３ｂ内部に真空雰囲気が形成される。
搬送室２の内部には搬送ロボット５が配置されている。 By the evacuation system 9, the inside of the transfer chamber 2, the inside of the vapor deposition apparatuses 10a to 10c, the inside of the processing chamber 6, the inside of the sputtering chamber 7, the inside of the mask storage chamber 8, the inside of the carry-in chamber 3a, and the inside of the carry-out chamber 3b A vacuum atmosphere is formed.
A transfer robot 5 is disposed inside the transfer chamber 2.

表面上に下部電極が形成された基板は搬入室３ａに搬入され、該基板は搬送ロボット５によって真空雰囲気中を搬入室３ａから搬送室２へ搬入され、処理室６で加熱処理やクリーニング処理等の処理がされ、蒸着装置１０ａ〜１０ｃ内部で、電子注入層、電子輸送層、発光層、ホール輸送層、ホール注入層等の有機薄膜が形成され、スパッタ室７内部で上部電極膜が形成され、製造された有機ＥＬ素子は搬出室３ｂから外部に搬出されるようになっている。   The substrate with the lower electrode formed on the surface is carried into the carry-in chamber 3a, and the substrate is carried into the transfer chamber 2 from the carry-in chamber 3a by the transfer robot 5 in the vacuum atmosphere. Thus, organic thin films such as an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer are formed inside the vapor deposition apparatuses 10a to 10c, and an upper electrode film is formed inside the sputtering chamber 7. The manufactured organic EL element is unloaded from the unloading chamber 3b.

例えば、下部電極は基板表面の複数の領域にそれぞれ形成され、発光層は２色以上の異なる色の着色層（例えば赤、緑、青）が、異なる領域上に形成されて構成されている。
上部電極に通電した状態で、選択した電極に通電すれば、選択された電極上にある着色層だけが発光する。このように、２色以上の着色層で発光層を構成することで、フルカラー表示が可能となる。 For example, the lower electrode is formed in each of a plurality of regions on the surface of the substrate, and the light emitting layer is formed by forming two or more different colored layers (for example, red, green, and blue) on different regions.
If the selected electrode is energized while the upper electrode is energized, only the colored layer on the selected electrode emits light. In this way, full-color display is possible by forming the light emitting layer with two or more colored layers.

図２は発光層の成膜に用いられる本発明の蒸着装置１０ｂの模式的な斜視図、図３はその蒸着装置１０ｂの断面図を示している。
蒸着装置１０ｂは、真空槽１１と、放出装置５０と、１又は２以上（ここでは３つ）の供給装置２０ａ〜２０ｃとを有している。各供給装置２０ａ〜２０ｃは同じ構成を有しており、同じ部材には同じ符号を付して説明する。 FIG. 2 is a schematic perspective view of a vapor deposition apparatus 10b of the present invention used for forming a light emitting layer, and FIG. 3 is a cross-sectional view of the vapor deposition apparatus 10b.
The vapor deposition apparatus 10b includes a vacuum chamber 11, a discharge apparatus 50, and one or more (here, three) supply apparatuses 20a to 20c. Each supply apparatus 20a-20c has the same structure, and attaches | subjects and demonstrates the same code | symbol to the same member.

供給装置２０ａ〜２０ｃはタンク３１（収容部）と、接続管４２と、回転軸３５と、回転手段４１と、蒸発室２１と、高温体２２と、加熱手段２４とを有している。   The supply devices 20 a to 20 c include a tank 31 (accommodating portion), a connection pipe 42, a rotation shaft 35, a rotation means 41, an evaporation chamber 21, a high temperature body 22, and a heating means 24.

タンク３１は容器３２と、蓋３４を有しており、蓋３４を開けるとタンク３１の内部空間が大気雰囲気に接続され、蓋３４を閉めると容器３２の開口が密閉され、タンク３１の内部空間が大気雰囲気から遮断される。
タンク３１の底面（ここでは容器３２の底面）はすり鉢状になっており、すり鉢状の底面の下端には開口が形成されている。タンク３１は開口が形成された底面を下方に向けて配置され、蒸発室２１は該開口の下方位置に配置されている。 The tank 31 has a container 32 and a lid 34. When the lid 34 is opened, the internal space of the tank 31 is connected to the atmosphere. When the lid 34 is closed, the opening of the container 32 is sealed, and the internal space of the tank 31 is closed. Is cut off from the atmosphere.
The bottom surface of the tank 31 (here, the bottom surface of the container 32) has a mortar shape, and an opening is formed at the lower end of the mortar-shaped bottom surface. The tank 31 is disposed with the bottom surface where the opening is formed facing downward, and the evaporation chamber 21 is disposed at a position below the opening.

接続管４２は上端がタンク３１の開口に気密に接続され、下端が蒸発室２１内部に気密に挿入されている。従って、接続管４２の下端は蒸発室２１の内部空間、即ち、タンク３１の外部空間に露出している。
接続管４２は直管である。回転軸３５は直線状の棒でからなる中心軸３７と、中心軸３７の周囲に螺旋状に形成された突条３６とを有している。突条３６は螺旋状であるから、突条３６間の溝も螺旋状になっている。 The connection pipe 42 is hermetically connected at the upper end to the opening of the tank 31, and the lower end is inserted hermetically into the evaporation chamber 21. Therefore, the lower end of the connection pipe 42 is exposed to the internal space of the evaporation chamber 21, that is, the external space of the tank 31.
The connecting pipe 42 is a straight pipe. The rotating shaft 35 has a central axis 37 made of a straight bar and a ridge 36 formed in a spiral around the central axis 37. Since the protrusions 36 are spiral, the groove between the protrusions 36 is also spiral.

回転軸３５は突条３６が形成された領域の少なくとも一部が接続管４２内に位置するように接続管４２に挿通されている。従って、突条３６間の溝を介してタンク３１の内部空間と蒸発室２１の内部空間とが接続される。   The rotating shaft 35 is inserted into the connecting pipe 42 so that at least a part of the region where the protrusions 36 are formed is located in the connecting pipe 42. Therefore, the internal space of the tank 31 and the internal space of the evaporation chamber 21 are connected via the groove between the protrusions 36.

図２は蓋３４を開けて有機材料３９をタンク３１内に収容した後、蓋３４を閉めた状態を示している。上述したようにタンク３１の底面はすり鉢状になっているから、有機材料３９はすり鉢下端の開口に向かって滑り落ちる。
本発明に用いられる蒸着材料は粉体の有機材料である。 FIG. 2 shows a state in which the lid 34 is closed after the lid 34 is opened and the organic material 39 is accommodated in the tank 31. Since the bottom surface of the tank 31 has a mortar shape as described above, the organic material 39 slides down toward the opening at the lower end of the mortar.
The vapor deposition material used in the present invention is a powdered organic material.

突条３６の表面と接続管４２の内壁面との間の隙間は、その有機材料の粒径（例えば粒径１００μｍ以上２００μｍ以下）よりも小さくなっており、すり鉢下端に滑り落ちた有機材料３９は突条３６と接続管４２内壁面との間の隙間を通らず、落下しない。   The gap between the surface of the protrusion 36 and the inner wall surface of the connecting pipe 42 is smaller than the particle size of the organic material (for example, particle size of 100 μm or more and 200 μm or less), and the organic material 39 slipped down to the lower end of the mortar. Does not pass through the gap between the protrusion 36 and the inner wall surface of the connecting pipe 42 and does not fall.

また、突条３６の水平面に対する角度は、回転軸３５が静止した状態では、突条３６と突条３６の溝の間に有機材料３９が入り込まない程小さくされている。従って、回転軸３５が静止した状態では、有機材料３９はタンク３１の開口よりも下方に移動せず、タンク３１内に留まる。   In addition, the angle of the protrusion 36 with respect to the horizontal plane is so small that the organic material 39 does not enter between the protrusion 36 and the groove of the protrusion 36 when the rotating shaft 35 is stationary. Therefore, when the rotating shaft 35 is stationary, the organic material 39 does not move below the opening of the tank 31 and remains in the tank 31.

回転手段４１は回転軸３５に接続されている。突条３６は中心軸３７に固定されており、回転手段４１の動力を回転軸３５に伝達させると、中心軸３７と一緒に突条３６が一緒に回転し、回転軸３５全体が上昇も下降もせず、接続管４２に挿通された状態を維持しながら、接続管４２の中心軸線を中心として回転する。   The rotating means 41 is connected to the rotating shaft 35. The ridge 36 is fixed to the center shaft 37. When the power of the rotating means 41 is transmitted to the rotation shaft 35, the ridge 36 rotates together with the center shaft 37, and the entire rotation shaft 35 rises and falls. Without rotating, it rotates around the central axis of the connecting pipe 42 while maintaining the state of being inserted through the connecting pipe 42.

このときの回転方向は、回転軸３５を螺合する雌ネジに挿入したと仮定したとき時に、回転によって先端が雌ネジから突き出る方向になっており、回転軸３５が回転すると、有機材料３９に突条３６の斜面に沿って下向きに移動する力が加わる。   The rotation direction at this time is a direction in which the tip protrudes from the female screw by rotation when the rotation shaft 35 is assumed to be inserted into the female screw to be screwed. A force that moves downward along the slope of the ridge 36 is applied.

ここでは、回転軸３５は突条３６が形成された部分が、タンク３１の開口よりも上方に突き出るように接続管４２に挿通されており、タンク３１に収容された有機材料３９は突条３６の斜面を滑って突条３６と突条３６の溝に入り込み、突条３６の斜面に沿って下向きに移動する。   Here, the rotating shaft 35 is inserted into the connecting pipe 42 so that the portion where the protrusion 36 is formed protrudes upward from the opening of the tank 31, and the organic material 39 accommodated in the tank 31 is the protrusion 36. The ridges 36 and the ridges 36 enter the grooves, and move downward along the ridges 36.

突条３６の斜面は予め機械的に研磨されている。回転軸３５の少なくとも突条３６はＳｉ3Ｎ4を主成分とするセラミック材料で構成されている。Ｓｉ3Ｎ4はアルミナ等に比べて機械的強度が高いので、破損することなく機械的に研磨され、斜面が平滑になっている。
従って、突条３６間の溝を通る有機材料３９は、途中で詰まることなく移動し、接続管４２の下端から落下して蒸発室２１内に供給される。 The slope of the ridge 36 is mechanically polished in advance. At least the protrusion 36 of the rotating shaft 35 is made of a ceramic material mainly composed of Si 3 N 4 . Since Si 3 N 4 has higher mechanical strength than alumina or the like, it is mechanically polished without breakage and the slope is smooth.
Accordingly, the organic material 39 passing through the groove between the protrusions 36 moves without being clogged on the way, falls from the lower end of the connection pipe 42, and is supplied into the evaporation chamber 21.

有機材料３９は途中で詰まることが無いから、回転軸３５の回転量と、蒸発室２１に供給される有機材料３９の量（例えば質量）との関係は変らない。その関係から、必要量の有機材料３９を蒸発室２１に供給するために、必要な回転軸３５の回転量が分かる。   Since the organic material 39 is not clogged in the middle, the relationship between the rotation amount of the rotary shaft 35 and the amount (for example, mass) of the organic material 39 supplied to the evaporation chamber 21 does not change. From this relationship, the amount of rotation of the rotating shaft 35 necessary for supplying the required amount of the organic material 39 to the evaporation chamber 21 is known.

高温体２２は高温容器２２ｂと、高温容器２２ｂの底面略中央位置に設けられた突部２２ａとを有しており、高温容器２２ｂの開口は接続管４２下端の開口よりも大きく、突部２２ａの先端は接続管４２下端の開口よりも小さくなっている。   The high-temperature body 22 has a high-temperature container 22b and a protrusion 22a provided at a substantially central position of the bottom surface of the high-temperature container 22b. The opening of the high-temperature container 22b is larger than the opening at the lower end of the connecting pipe 42, and the protrusion 22a. This tip is smaller than the opening at the lower end of the connecting pipe 42.

高温体２２は、高温容器２２ｂの開口が上側に向けられ、突部２２ａ先端の中心が、接続管４２の中心軸線の鉛直下方に位置するように、蒸発室２１内部に配置されており、接続管４２の下端開口の縁は、高温容器２２ｂの開口の縁と、突部２２ａの先端外周との間の、リング状の領域の真上に位置する。   The high-temperature body 22 is disposed inside the evaporation chamber 21 so that the opening of the high-temperature container 22b is directed upward, and the center of the tip of the protrusion 22a is positioned vertically below the central axis of the connection pipe 42. The edge of the lower end opening of the tube 42 is located directly above the ring-shaped region between the edge of the opening of the high temperature vessel 22b and the outer periphery of the tip of the protrusion 22a.

接続管４２の下端から落下する有機材料３９は、高温容器２２ｂ側面と突部２２ａ側面の間に、突部２２ａを取り囲むように配置されるから、後述するように高温体２２を加熱した時に、有機材料３９の加熱効率が高い。   Since the organic material 39 falling from the lower end of the connecting pipe 42 is disposed between the side surface of the high temperature container 22b and the side surface of the protrusion 22a so as to surround the protrusion 22a, when the high temperature body 22 is heated as described later, The heating efficiency of the organic material 39 is high.

加熱手段２４は、蒸発室２１の周囲に巻き回されたコイル２５と、コイル２５に接続された交流電源２６とを有しており、交流電源２６からコイル２５に交流電圧を印加すると、蒸発室２１の内部空間に電磁場が形成される。   The heating unit 24 includes a coil 25 wound around the evaporation chamber 21 and an AC power source 26 connected to the coil 25. When an AC voltage is applied from the AC power source 26 to the coil 25, the evaporation chamber An electromagnetic field is formed in the internal space of 21.

回転軸３５の下端は蒸発室２１の天井よりも下方に突き出され、回転軸３５の下端部分（ここでは中心軸３７の下端部分）と高温体２２は、蒸発室２１の内部空間、即ち、電磁場が形成される電磁場形成空間に位置する。
突部２２ａと高温容器２２ｂは、それぞれステンレス等の高抵抗の導電材料で構成されている。 The lower end of the rotating shaft 35 protrudes below the ceiling of the evaporation chamber 21, and the lower end portion of the rotating shaft 35 (here, the lower end portion of the central shaft 37) and the high-temperature body 22 are the internal space of the evaporation chamber 21, that is, the electromagnetic field. It is located in the electromagnetic field formation space where is formed.
The protrusion 22a and the high temperature container 22b are each made of a high resistance conductive material such as stainless steel.

これに対し、中心軸３７は突条３６と同じセラミック材料で構成されており、そのセラミック材料は絶縁性である。従って、回転軸３５の電磁場形成空間に位置する部分は絶縁性であり、蒸発室２１内部に電磁場を形成すると、高温体２２は誘導加熱されるが、回転軸３５は誘導加熱されない。   On the other hand, the central shaft 37 is made of the same ceramic material as the protrusions 36, and the ceramic material is insulative. Therefore, the part located in the electromagnetic field formation space of the rotating shaft 35 is insulative, and when the electromagnetic field is formed inside the evaporation chamber 21, the high temperature body 22 is induction-heated, but the rotating shaft 35 is not induction-heated.

真空槽１１と、放出装置５０と、タンク３１と、蒸発室２１はそれぞれ真空排気系９に接続されている。
真空排気系９によって蒸発室２１内部に真空雰囲気を形成した状態で、加熱した高温体２２に有機材料３９を配置すると、蒸発室２１の内部に有機材料３９の蒸気が発生する。上述したように、回転軸３５は誘導加熱されないから、回転軸３５に接触する有機材料３９は蒸発せず、接続管４２内やタンク３１内に蒸気が発生しない。 The vacuum chamber 11, the discharge device 50, the tank 31, and the evaporation chamber 21 are each connected to the vacuum exhaust system 9.
When the organic material 39 is disposed on the heated high-temperature body 22 in a state where a vacuum atmosphere is formed inside the evaporation chamber 21 by the vacuum exhaust system 9, vapor of the organic material 39 is generated inside the evaporation chamber 21. As described above, since the rotating shaft 35 is not induction-heated, the organic material 39 that contacts the rotating shaft 35 does not evaporate, and no steam is generated in the connection pipe 42 or the tank 31.

蒸発室２１は切替装置６５を介して放出装置５０に接続されている。
切替装置６５は一端が蒸発室２１に接続され、他端が放出装置５０に接続された配管５９ａ〜５９ｃと、配管５９ａ〜５９ｃの一端と他端の間に設けられたバルブ５７ａ〜５７ｃとを有している。 The evaporation chamber 21 is connected to the discharge device 50 via the switching device 65.
The switching device 65 includes pipes 59a to 59c having one end connected to the evaporation chamber 21 and the other end connected to the discharge device 50, and valves 57a to 57c provided between the one end and the other end of the pipes 59a to 59c. Have.

放出装置５０内部に真空雰囲気を形成し、蒸発室２１内に蒸気を発生させた状態で、バルブ５７ａ〜５７ｃを空け、蒸発室２１を放出装置５０に接続すると、圧力差により、蒸気が配管５９ａ〜５９ｃを通って放出装置５０へ移動する。バルブ５７ａ〜５７ｃを閉状態にすると蒸発室２１が放出装置５０から遮断され、蒸気が移動しない。   In a state where a vacuum atmosphere is formed in the discharge device 50 and vapor is generated in the evaporation chamber 21, the valves 57a to 57c are opened and the evaporation chamber 21 is connected to the discharge device 50. Move to release device 50 through ~ 59c. When the valves 57a to 57c are closed, the evaporation chamber 21 is shut off from the discharge device 50, and the steam does not move.

ここでは、１つの放出装置５０に複数の供給装置２０ａ〜２０ｃが接続されており、開状態にするバルブ５７ａ〜５７ｃを選択することで、所望の供給装置２０ａ〜２０ｃの蒸発室２１を放出装置５０へ接続し、該蒸発室２１で発生する蒸気を放出装置５０へ供給することができる。   Here, a plurality of supply devices 20a to 20c are connected to one discharge device 50, and by selecting the valves 57a to 57c to be opened, the evaporation chamber 21 of the desired supply devices 20a to 20c is set to the discharge device. The vapor generated in the evaporation chamber 21 can be supplied to the discharge device 50.

放出装置５０は、箱状の放出容器（筐体）５１と、放出容器５１の内部に配置された供給管（ヘッダ）５２とを有しており、放出装置５０に供給された蒸気は供給管５２に供給される。
供給管５２には噴出口５３が形成されており、供給管５２に供給された蒸気は噴出口５３から放出容器５１内部に放出される。 The discharge device 50 includes a box-shaped discharge container (housing) 51 and a supply pipe (header) 52 disposed inside the discharge container 51, and the steam supplied to the discharge apparatus 50 is supplied from the supply pipe. 52.
An outlet 53 is formed in the supply pipe 52, and the vapor supplied to the supply pipe 52 is discharged from the outlet 53 into the discharge container 51.

放出装置５０には放出口５５が形成され、放出装置５０は、各放出口５５が真空槽１１の内部空間に露出するように、一部又は全部が真空槽１１の内部に配置されており、放出容器５１内部に放出された蒸気は、放出口５５から真空槽１１内部に放出される。   A discharge port 55 is formed in the discharge device 50, and a part or all of the discharge device 50 is disposed inside the vacuum chamber 11 such that each discharge port 55 is exposed to the internal space of the vacuum chamber 11. The vapor discharged into the discharge container 51 is discharged into the vacuum chamber 11 from the discharge port 55.

真空槽１１内部の基板ホルダ１５が配置され、真空槽１１に搬入された基板８１は基板ホルダ１５に配置される。基板ホルダ１５は放出装置５０上に位置しており、基板ホルダ１５に配置された基板８１は放出装置５０上に位置する。
基板ホルダ１５に配置された基板８１と放出装置５０の間の位置にはマスク１６が配置されている。マスク１６は板状の遮蔽部１８と、遮蔽部１８に形成された開口１７とを有している。 The substrate holder 15 inside the vacuum chamber 11 is disposed, and the substrate 81 carried into the vacuum chamber 11 is disposed on the substrate holder 15. The substrate holder 15 is located on the discharge device 50, and the substrate 81 disposed on the substrate holder 15 is located on the discharge device 50.
A mask 16 is disposed at a position between the substrate 81 disposed on the substrate holder 15 and the discharge device 50. The mask 16 has a plate-shaped shielding part 18 and an opening 17 formed in the shielding part 18.

基板ホルダ１５とマスク１６のいずれか一方又は両方はアライメント手段６０に接続されている。アライメント手段６０は、基板８１とマスク１６に形成されたアライメントマークを観察しながら、基板ホルダ１５と一緒に、基板８１をマスク１６に対して相対的に移動させ、位置合わせを行う。   One or both of the substrate holder 15 and the mask 16 are connected to the alignment means 60. The alignment unit 60 moves the substrate 81 relative to the mask 16 together with the substrate holder 15 while observing the alignment marks formed on the substrate 81 and the mask 16 to perform alignment.

次に、本発明の蒸着装置１０ｂを用いて実際の成膜を行う前の予備試験について説明する。
通常、成膜すべき薄膜の膜厚は予め決められている。 Next, a preliminary test before actual film formation using the vapor deposition apparatus 10b of the present invention will be described.
Usually, the thickness of the thin film to be formed is predetermined.

予備試験は、実際の成膜に用いるものと同じ有機材料３９をタンク３１に収容しておき、真空雰囲気の圧力、高温体２２の加熱温度等の成膜条件を、実際の成膜工程と同じにし、蒸発室２１に有機材料３９を供給して蒸気を発生させ、放出装置５０上に基板（成膜工程でマスク１６を使用するならばマスク１６と基板）とを配置した状態で、その蒸気を放出装置５０から放出させて薄膜を形成し、蒸発室２１内への有機材料３９の供給量と、成膜された薄膜の膜厚とを調べ、決められた膜厚の成膜に必要な、有機材料３９の供給量（必要供給量）を求める。   In the preliminary test, the same organic material 39 as that used for actual film formation is stored in the tank 31, and the film formation conditions such as the pressure in the vacuum atmosphere and the heating temperature of the high temperature body 22 are the same as those in the actual film formation process. Then, the vapor is generated by supplying the organic material 39 to the evaporation chamber 21, and the substrate (the mask 16 and the substrate if the mask 16 is used in the film forming process) is disposed on the discharge device 50. Is released from the discharge device 50 to form a thin film, and the supply amount of the organic material 39 into the evaporation chamber 21 and the film thickness of the formed thin film are examined, and is necessary for film formation with a predetermined film thickness. Then, the supply amount (required supply amount) of the organic material 39 is obtained.

上述したように、回転軸３５の回転量と、蒸発室２１への有機材料３９の供給量との関係は変らないから、その関係から、有機材料３９を必要供給量供給するための回転軸３５の回転量（必要回転量）が分かる。   As described above, since the relationship between the rotation amount of the rotation shaft 35 and the supply amount of the organic material 39 to the evaporation chamber 21 does not change, the rotation shaft 35 for supplying the necessary supply amount of the organic material 39 from the relationship. The amount of rotation (necessary amount of rotation) is known.

次に、予備試験の結果に基づいて、本発明の蒸着装置１０ｂで発光層を成膜する工程について説明する。
放出装置５０に接続された供給装置２０ａ〜２０ｃの数は、発光層を構成する着色層の色の数と同じかそれ以上である。例えば、着色層は赤、緑、青色の３色である。 Next, based on the result of the preliminary test, the process of forming a light emitting layer with the vapor deposition apparatus 10b of the present invention will be described.
The number of supply devices 20a to 20c connected to the emission device 50 is equal to or more than the number of colors of the colored layers constituting the light emitting layer. For example, the colored layer has three colors of red, green, and blue.

有機材料３９は、主成分である有機発光材料（ホスト）に、着色層と同じ色の有機色素がドーパントとして添加された混合物である。
供給装置２０ａ〜２０ｃのタンク３１に異なる色の有機材料３９をそれぞれ収容してから、タンク３１の蓋３４を閉じ、タンク３１と、蒸発室２１と、真空槽１１と、放出装置５０と、切替装置６５を真空排気し、所定圧力（例えば１０-5Ｐａ）の真空雰囲気を形成しておく。 The organic material 39 is a mixture in which an organic dye having the same color as that of the colored layer is added as a dopant to an organic light emitting material (host) that is a main component.
After the organic materials 39 of different colors are respectively stored in the tanks 31 of the supply devices 20a to 20c, the lid 34 of the tank 31 is closed, and the tank 31, the evaporation chamber 21, the vacuum chamber 11, and the discharge device 50 are switched. The apparatus 65 is evacuated to form a vacuum atmosphere at a predetermined pressure (for example, 10 −5 Pa).

真空槽１１と、タンク３１と、放出装置５０と、蒸発室２１の真空雰囲気を維持しながら、各供給装置２０ａ〜２０ｃの蒸発室２１をそれぞれ放出装置５０から遮断し、各高温体２２を所定温度（例えば２００℃〜３００℃）に加熱しておく。
赤、緑、青のうち、いずれか１色を第一の色、残りの二色のうち、一方を第二の色、他方を第三の色とする。 While maintaining the vacuum atmosphere of the vacuum chamber 11, the tank 31, the discharge device 50, and the evaporation chamber 21, the evaporation chamber 21 of each of the supply devices 20 a to 20 c is shut off from the discharge device 50. It is heated to a temperature (for example, 200 ° C. to 300 ° C.).
One of red, green, and blue is the first color, and one of the remaining two colors is the second color and the other is the third color.

第一の色の有機材料３９が収容された供給装置２０ａの、蒸発室２１に接続された真空排気系９のバルブを閉じた状態で、その供給装置２０ａの回転軸３５を必要回転量回転させ、予備試験で求めた必要供給量の有機材料３９を、所定温度に加熱した高温体２２に配置し、必要供給量の有機材料３９の蒸気を発生させる。
放出装置５０に真空排気系９が接続されている場合は、放出装置５０に接続された真空排気系９のバルブを閉じておく。 While the valve of the evacuation system 9 connected to the evaporation chamber 21 of the supply device 20a containing the first color organic material 39 is closed, the rotation shaft 35 of the supply device 20a is rotated by the necessary amount of rotation. Then, the necessary supply amount of the organic material 39 obtained in the preliminary test is disposed on the high temperature body 22 heated to a predetermined temperature, and the vapor of the necessary supply amount of the organic material 39 is generated.
When the vacuum exhaust system 9 is connected to the discharge device 50, the valve of the vacuum exhaust system 9 connected to the discharge device 50 is closed.

有機材料３９を高温体２２に配置してから所定時間経過後か、蒸発室２１内の圧力が所定圧力に達したら、蒸発室２１に接続された真空排気系９のバルブと、放出装置５０に接続された真空排気系９のバルブをそれぞれ閉じたまま、第一の色の有機材料３９の蒸気が発生した蒸発室２１を放出装置５０に接続し、その蒸気を放出口５５から放出させる。   After a predetermined time has elapsed since the organic material 39 was placed on the high temperature body 22 or when the pressure in the evaporation chamber 21 reaches a predetermined pressure, the valve of the vacuum exhaust system 9 connected to the evaporation chamber 21 and the discharge device 50 are connected. The evaporation chamber 21 in which the vapor of the first color organic material 39 is generated is connected to the discharge device 50 while the valves of the connected vacuum exhaust system 9 are closed, and the vapor is discharged from the discharge port 55.

少なくとも、放出口５５からの蒸気の放出が開始する前に、基板８１を真空槽１１内部に搬入して基板ホルダ１５に配置し、第一の色の着色層が形成されるべき領域が開口１７と対面するよう位置合わせをしておく。   At least before the start of the discharge of the vapor from the discharge port 55, the substrate 81 is carried into the vacuum chamber 11 and placed in the substrate holder 15, and the region where the colored layer of the first color is to be formed is the opening 17. Align so as to face each other.

蒸気の放出開始から所定時間が経過するか、蒸発室２１の内部の圧力が所定圧力以下になり、必要供給量の有機材料３９から発生した蒸気が放出口５５から放出されなくなる成膜終了時まで、位置合わせしたマスク１６と基板８１を放出装置５０上に配置しておくと、基板８１の決められた領域に、決められた膜厚の第一の色の着色層が形成される。   Until a predetermined time elapses from the start of the discharge of the vapor, or until the end of the film formation in which the vapor generated from the required amount of the organic material 39 is not released from the discharge port 55 because the pressure inside the evaporation chamber 21 becomes lower than the predetermined pressure. When the aligned mask 16 and the substrate 81 are arranged on the discharge device 50, a colored layer of a first color having a predetermined thickness is formed in a predetermined region of the substrate 81.

決められた膜厚の着色層が形成されたら、第一の色の有機材料３９の蒸気を発生させた蒸発室２１を放出装置５０から遮断し、該蒸発室２１と、真空槽１１と、放出装置５０とを真空排気して、第一の色の有機材料３９の蒸気を蒸着装置１０ｂ内から排出する。   When the colored layer having the determined film thickness is formed, the evaporation chamber 21 that has generated the vapor of the first color organic material 39 is shut off from the discharge device 50, and the evaporation chamber 21, the vacuum chamber 11, and the discharge are released. The apparatus 50 is evacuated to discharge the vapor of the first color organic material 39 from the vapor deposition apparatus 10b.

次に、第二の色の着色層が形成されるべき領域と、開口１７とが対面するように基板８１とマスク１６を位置合わせする。
第一の色の有機材料３９が収容された供給装置２０ａに代え、第二の色の有機材料３９が収容された供給装置２０ｂで、第一の色の着色層を成膜した時と同じ工程で、必要供給量の第二の色の有機材料３９の蒸気を発生させ、該蒸気を放出装置５０から放出させる。蒸気の放出開始から成膜終了時まで、位置合わせしたマスク１６と基板８１を放出装置５０上に配置しておくと、第二の色の着色層が形成されるべき領域に、決められた膜厚の第二の色の着色層が形成される。 Next, the substrate 81 and the mask 16 are aligned so that the region where the colored layer of the second color is to be formed faces the opening 17.
The same process as when the colored layer of the first color is formed by the supply device 20b containing the organic material 39 of the second color instead of the supply device 20a containing the organic material 39 of the first color. Then, the vapor of the required amount of the organic material 39 of the second color is generated, and the vapor is discharged from the discharge device 50. When the aligned mask 16 and the substrate 81 are arranged on the discharge device 50 from the start of vapor discharge to the end of film formation, a predetermined film is formed in the region where the colored layer of the second color is to be formed. A thick colored layer of the second color is formed.

成膜終了後、蒸着装置１０ｂから蒸気を排出し、第三の色の着色層が形成されるべき領域と、開口とが対面するよう位置合わせし、第三の色の有機材料３９が収容された供給装置２０ｃで、必要供給量の第三の色の有機材料３９の蒸気を発生させ、該蒸気を放出装置５０から放出させ、蒸気の放出開始から成膜終了まで、位置合わせしたマスク１６と基板８１を放出装置５０上に配置しておくと、第三の色の着色層が形成されるべきに決められた膜厚の第三の色の着色層が形成され、基板８１表面上に３色の着色層からなる発光層が形成される。   After the film formation is completed, the vapor is discharged from the vapor deposition apparatus 10b, and the region where the third color layer is to be formed is aligned with the opening so that the third color organic material 39 is accommodated. The supply device 20c generates the required amount of the vapor of the organic material 39 of the third color, releases the vapor from the discharge device 50, and aligns the mask 16 from the start of the vapor discharge to the end of the film formation. If the substrate 81 is placed on the discharge device 50, a third color layer having a thickness determined to form a third color layer is formed. A light emitting layer composed of a colored layer is formed.

発光層が形成された基板８１を基板ホルダ１５から取り外して真空槽１１外部に搬出し、新たな基板８１を真空槽１１内部に搬入して基板ホルダ１５に配置する基板交換と、上述した発光層の形成とを繰り返せば、複数枚の基板８１に発光層を形成することができる。   The substrate 81 on which the light emitting layer is formed is removed from the substrate holder 15 and carried out of the vacuum chamber 11, the substrate is replaced with the new substrate 81 carried into the vacuum chamber 11 and placed on the substrate holder 15, and the above-described light emitting layer. By repeating the above, the light emitting layer can be formed on the plurality of substrates 81.

蒸発室２１の内部空間に露出する壁面（例えば回転軸３５の先端や蒸発室２１の内壁面）の温度が低いと、蒸発室２１で発生した蒸気が析出して析出物が生じる。複数枚の基板８１の成膜処理を行った後は析出物の層が厚くなり、その析出物が高温体２２に落下すると、高温体２２に必要供給量を超える有機材料３９が配置され、着色層の膜厚が決められた膜厚を超えてしまう。   When the temperature of the wall surface exposed to the internal space of the evaporation chamber 21 (for example, the tip of the rotating shaft 35 or the inner wall surface of the evaporation chamber 21) is low, the vapor generated in the evaporation chamber 21 is deposited and precipitates are generated. After the deposition process of the plurality of substrates 81 is performed, the deposit layer becomes thick, and when the precipitate falls on the high temperature body 22, the organic material 39 exceeding the necessary supply amount is disposed on the high temperature body 22 and colored. The film thickness of the layer exceeds the determined film thickness.

本発明では、高温体２２が放出する赤外線（輻射熱）が、蒸発室２１内部に露出する壁面全部に入射するようになっており、露出する壁面全部が有機材料３９が蒸発する温度以上に加熱される。従って、蒸気が析出せず、着色層が正確に決められた膜厚となる。   In the present invention, infrared rays (radiant heat) emitted from the high-temperature body 22 are incident on all the wall surfaces exposed inside the evaporation chamber 21, and all the exposed wall surfaces are heated to a temperature higher than the temperature at which the organic material 39 evaporates. The Therefore, no vapor is deposited, and the colored layer has a precisely determined film thickness.

上述したように中心軸３７は突条３６と同じ、Ｓｉ3Ｎ4を主成分とするセラミック材料で構成されている。該セラミック材料は断熱性が高いので、回転軸３５の先端（中心軸３７の先端）が高温になっても、中心軸３７の他の部分や突条３６は有機材料３９が蒸発する温度には到達せず、突条３６に接触する有機材料３９は蒸発しない。従って、回転軸３５の回転量と、有機材料３９の供給量の関係が変らない。 As described above, the central shaft 37 is made of the same ceramic material as that of the protrusions 36 and mainly composed of Si 3 N 4 . Since the ceramic material has high heat insulating properties, even if the tip of the rotating shaft 35 (tip of the central shaft 37) becomes high temperature, the other parts of the central shaft 37 and the protrusions 36 are at a temperature at which the organic material 39 evaporates. The organic material 39 that does not reach and contacts the protrusion 36 does not evaporate. Therefore, the relationship between the rotation amount of the rotating shaft 35 and the supply amount of the organic material 39 does not change.

本発明では、マスク１６を放出装置５０上に配置したまま複数の基板８１の成膜を行うことができるが、成膜を繰り返すと、マスク１６に有機材料３９が付着し、成膜精度が劣化するので、予め決めた所定枚数の基板８１の成膜が終了したら、マスク１６を交換することが望ましい。   In the present invention, the plurality of substrates 81 can be formed while the mask 16 is placed on the discharge device 50. However, when the film formation is repeated, the organic material 39 adheres to the mask 16 and the film formation accuracy deteriorates. Therefore, it is desirable to replace the mask 16 when the predetermined number of substrates 81 have been formed.

以上は、１つの蒸着装置１０ｂ内で複数種類の薄膜（着色層）を形成する場合について説明したが、本発明はこれに限定されず、１つの放出装置５０に供給装置２０ａ〜２０ｃを１つだけ接続し、１種類の薄膜だけを形成することもできる。
本発明の蒸着装置１０ｂは発光層だけでなく、ホール輸送層、ホール注入層、電子注入層、電子輸送層等、他の有機薄膜の成膜に用いることもできる。 Although the case where a plurality of types of thin films (colored layers) are formed in one vapor deposition device 10b has been described above, the present invention is not limited to this, and one supply device 20a to 20c is provided in one discharge device 50. Only one type of thin film can be formed.
The vapor deposition apparatus 10b of the present invention can be used not only for the light emitting layer but also for the formation of other organic thin films such as a hole transport layer, a hole injection layer, an electron injection layer, and an electron transport layer.

１つの真空槽１１内部には、１又は複数の放出装置５０を配置することができる。１つの真空槽１１内部に複数の放出装置５０を配置する場合、各放出装置５０から放出される蒸気が混合されないよう、放出装置５０同士の距離を十分に離すか、真空槽１１内部に蒸気の流れを遮蔽する遮蔽板を設けることが望ましい。   One or a plurality of discharge devices 50 can be arranged inside one vacuum chamber 11. When a plurality of discharge devices 50 are arranged inside one vacuum chamber 11, the discharge devices 50 are sufficiently separated from each other so that the vapor discharged from each discharge device 50 is not mixed, or the vapor is not contained in the vacuum chamber 11. It is desirable to provide a shielding plate that shields the flow.

以上は、有機材料３９としてホストとドーパントとが予め混合されたものを用いる場合について説明したが、本発明はこれに限定されない。
例えば、１つの放出装置５０に複数の供給装置２０ａ〜２０ｃを接続しておき、ホストとドーパントをそれぞれ異なる供給装置２０ａ〜２０ｃのタンク３１に収容する。 Although the above has described the case where the organic material 39 is prepared by mixing a host and a dopant in advance, the present invention is not limited to this.
For example, a plurality of supply devices 20a to 20c are connected to one discharge device 50, and the host and the dopant are accommodated in the tanks 31 of the different supply devices 20a to 20c.

ホストの蒸気とドーパントの蒸気を異なる供給装置２０ａ〜２０ｃで発生させ、それらの蒸気を同じ放出装置５０に一緒に供給すれば、蒸気は放出装置５０内部で混合されるから、放出口５５からはホストの蒸気とドーパントの蒸気の混合蒸気が放出され、ホストとドーパントを両方含有する薄膜が成長する。   If the vapor of the host and the vapor of the dopant are generated by different supply devices 20 a to 20 c and are supplied to the same discharge device 50, the vapor is mixed inside the discharge device 50. A mixed vapor of host vapor and dopant vapor is released, and a thin film containing both the host and dopant is grown.

放出装置５０と、基板ホルダ１５のいずれか一方又は両方を揺動手段５８に接続しておき、着色層を成長させる間、基板８１とマスク１６を相対的に静止させた状態で、放出装置５０と基板ホルダ１５のいずれか一方又は両方を水平面内で往復移動又は円運動させ、基板ホルダ１５に保持された基板８１を基板ホルダ１５と一緒に、放出装置５０に対して移動させれば、着色層の膜厚が均一になる。   Either one or both of the emission device 50 and the substrate holder 15 is connected to the swinging means 58, and the emission device 50 is kept stationary while the substrate 81 and the mask 16 are relatively stationary while the colored layer is grown. If one or both of the substrate holder 15 and the substrate holder 15 are reciprocated or circularly moved in a horizontal plane, and the substrate 81 held by the substrate holder 15 is moved together with the substrate holder 15 with respect to the discharge device 50, coloring is performed. The layer thickness is uniform.

基板ホルダ１５と放出装置５０との相対的な往復移動の方向は特に限定されないが、例えば、供給管５２が、所定間隔を空けて略平行に配置された複数本の分岐管を有する場合は、基板８１と放出装置５０を、該分岐管と交差する方向に水平面内で相対的に移動させる。   The direction of relative reciprocation between the substrate holder 15 and the discharge device 50 is not particularly limited. For example, when the supply pipe 52 has a plurality of branch pipes arranged substantially in parallel at a predetermined interval, The substrate 81 and the discharge device 50 are relatively moved in a horizontal plane in a direction intersecting the branch pipe.

供給管５２の噴出口５３は、放出容器５１の放出口５５と対面しない位置に設ければ、噴出口５３から噴出される蒸気は、放出容器５１に充満してから放出口５５から放出されるため、放出速度が安定する。具体的には、放出口５５が放出容器５１の天井に設けられている場合は、噴出口５３は供給管５２の放出容器５１の底面又は側面と対向する部分に設ける。   If the jet outlet 53 of the supply pipe 52 is provided at a position not facing the discharge outlet 55 of the discharge container 51, the vapor jetted from the jet outlet 53 is discharged from the discharge outlet 55 after filling the discharge container 51. Therefore, the release rate is stabilized. Specifically, when the discharge port 55 is provided on the ceiling of the discharge container 51, the jet port 53 is provided in a portion of the supply pipe 52 that faces the bottom surface or side surface of the discharge container 51.

放出装置５０（ここでは放出容器５１）の放出口５５が形成された面（前面）を、基板８１よりも大面積にし、放出口５５を前面に所定間隔を空けて分散配置しておけば、基板８１を放出装置５０上に位置させたまま、基板８１表面全部に亘って薄膜を形成することができる。この方法によれば、基板８１を搬送しながら成膜する必要がなく、真空槽１１内での基板８１の移動距離が短くなるので、基板８１の搬送によるダストの発生量が少ない。   If the surface (front surface) on which the discharge ports 55 of the discharge device 50 (here, the discharge container 51) are formed is larger than the substrate 81, and the discharge ports 55 are arranged in a distributed manner at a predetermined interval on the front surface, A thin film can be formed over the entire surface of the substrate 81 while the substrate 81 is positioned on the discharge device 50. According to this method, it is not necessary to form a film while transporting the substrate 81, and the moving distance of the substrate 81 in the vacuum chamber 11 is shortened, so that the amount of dust generated by transporting the substrate 81 is small.

放出装置５０の温度が低いと、蒸気が放出装置５０内で析出してしまうので、放出装置５０の壁面（例えば放出容器５１の壁面）にヒーター６８を取り付け、ヒーター６８で放出装置５０を加熱しながら、蒸気を放出装置５０に供給することが望ましい。   When the temperature of the discharge device 50 is low, vapor is deposited in the discharge device 50, so that a heater 68 is attached to the wall surface of the discharge device 50 (for example, the wall surface of the discharge container 51), and the discharge device 50 is heated by the heater 68. However, it is desirable to supply steam to the discharge device 50.

このとき、放出装置５０からの輻射熱でマスク１６が加熱されると、熱膨張が起こり、成膜精度が下がるので、放出装置５０とマスク１６との間に断熱材（冷却板）５７を配置し、ヒーター６８を冷却板５７で覆うことが望ましい。   At this time, if the mask 16 is heated by the radiant heat from the discharge device 50, thermal expansion occurs and film formation accuracy is lowered. Therefore, a heat insulating material (cooling plate) 57 is disposed between the discharge device 50 and the mask 16. It is desirable to cover the heater 68 with a cooling plate 57.

冷却板５７の放出口５５上の位置に、放出口５５が露出する開口（蒸気放出口）を設けておき、該開口の大きさを、放出口５５から放出される蒸気が接触しない程度に大きくすれば、蒸気が冷却板５７に析出しない。
高温体２２の加熱は誘導加熱に限定されず、加熱手段からの熱伝導で加熱してもよい。更に、有機材料３９にレーザービーム等を照射して、有機材料３９を直接加熱してもよい。
高温体２２を誘導加熱以外の方法で加熱する場合や、回転軸３５全部が電磁場形成空間の外部にある場合や、中心軸３７は誘導加熱可能な材料であっても構わない。 An opening (vapor discharge port) through which the discharge port 55 is exposed is provided at a position on the discharge port 55 of the cooling plate 57, and the size of the opening is large enough that the vapor discharged from the discharge port 55 is not in contact. Then, the vapor does not deposit on the cooling plate 57.
The heating of the high temperature body 22 is not limited to induction heating, and may be heated by heat conduction from a heating means. Further, the organic material 39 may be directly heated by irradiating the organic material 39 with a laser beam or the like.
When the high temperature body 22 is heated by a method other than induction heating, when the entire rotation shaft 35 is outside the electromagnetic field forming space, the center shaft 37 may be made of a material that can be induction heated.

しかし、回転軸３５全体の強度を考慮すると、突条３６と中心軸３７を同じセラミック材料で一体成形することが望ましい。具体的には、回転軸３５は、型に溶融したセラミック材料を流し込み、固めた後、型がら取り外し、表面を機械的に研磨して形成される。   However, considering the strength of the entire rotary shaft 35, it is desirable that the protrusion 36 and the central shaft 37 are integrally formed of the same ceramic material. Specifically, the rotating shaft 35 is formed by pouring and solidifying a molten ceramic material into a mold, removing the mold from the mold, and mechanically polishing the surface.

セラミック材料はＳｉ3Ｎ4を主成分とするものに限定されないが、機械的強度と、絶縁性の両方の機能を考慮すると、本発明には、Ｓｉ3Ｎ4を主成分とするセラミック材料が最も適している。 The ceramic material is not limited to a material mainly composed of Si 3 N 4 , but considering the functions of both mechanical strength and insulation, the present invention includes a ceramic material mainly composed of Si 3 N 4. Most suitable.

蒸発室２１を直接真空排気系に接続せずに、蒸発室２１を放出装置５０に接続した状態で、真空槽１１を真空排気することで、蒸発室２１内部を真空排気してもよい。この場合、蒸発室２１から放出装置５０を遮断することで、蒸発室２１内部の真空排気を停止させてから、有機材料３９を蒸発室２１内部で加熱する。   The inside of the evaporation chamber 21 may be evacuated by evacuating the vacuum chamber 11 in a state where the evaporation chamber 21 is connected to the discharge device 50 without connecting the evaporation chamber 21 directly to the evacuation system. In this case, the organic material 39 is heated inside the evaporation chamber 21 after stopping the evacuation inside the evaporation chamber 21 by shutting off the discharge device 50 from the evaporation chamber 21.

高温体２２の設置場所は特に限定されず、有機材料３９を高温体２２に配置可能であれば、接続管４２下端の斜め下方に配置してもよい。高温体２２の形状も特に限定されず、有機材料３９を配置可能であれば板状であってもよい。
マスク１６は各着色層の成膜で同じものを用いてもよいし、変えてもよい。
着色層の色の組合わせは赤、青、緑に限定されず、例えば、赤、青、黄等他の組合わせであってもよい。また、着色層の色の数は３色に限定されず、２色又は４色以上であってもよい。 The installation location of the high temperature body 22 is not particularly limited, and the organic material 39 may be disposed obliquely below the lower end of the connection pipe 42 as long as the organic material 39 can be disposed on the high temperature body 22. The shape of the high-temperature body 22 is not particularly limited, and may be a plate shape as long as the organic material 39 can be disposed.
The mask 16 may be the same or different in forming each colored layer.
The color combinations of the colored layers are not limited to red, blue, and green, and may be other combinations such as red, blue, and yellow. Further, the number of colors of the colored layer is not limited to three colors, and may be two colors or four or more colors.

以上は、第一、第二の薄膜（着色層）を積層せずに異なる領域にそれぞれ形成する場合について説明したが、本発明はこれに限定されず、マスクを用いないか、マスクの開口と基板との位置関係を変えずに２種以上の有機薄膜（例えば、ホール輸送層、ホール注入層、電子輸送層、電子注入層等）を成膜し、各有機薄膜を同じ場所に積層させることもできる。   The above describes the case where the first and second thin films (colored layers) are formed in different regions without being laminated, but the present invention is not limited to this, and the mask is not used or the opening of the mask. Two or more types of organic thin films (for example, a hole transport layer, a hole injection layer, an electron transport layer, an electron injection layer, etc.) are formed without changing the positional relationship with the substrate, and the organic thin films are stacked in the same place. You can also.

本発明に用いる蒸着材料は有機材料に限定されず、無機材料を用いることもできる。蒸発室２１から蒸気を放出装置５０に供給する際、蒸発室２１にキャリアガス（例えばＮ2）を導入すれば、蒸気の供給効率が高くなるが、着色層のような有機薄膜を成膜する場合には、キャリアガスが有機薄膜に取り込まれる虞があるので好ましくない。 The vapor deposition material used in the present invention is not limited to an organic material, and an inorganic material can also be used. When supplying a vapor from the evaporation chamber 21 to the discharge device 50, if a carrier gas (for example, N 2 ) is introduced into the evaporation chamber 21, the supply efficiency of the vapor is increased, but an organic thin film such as a colored layer is formed. In this case, the carrier gas is not preferable because it may be taken into the organic thin film.

成膜装置の一例を説明するための模式的な平面図Schematic plan view for explaining an example of a film forming apparatus 本発明の蒸着装置の模式的な斜視図Schematic perspective view of the vapor deposition apparatus of the present invention 本発明の蒸着装置の断面図Sectional drawing of the vapor deposition apparatus of this invention 従来技術の蒸着装置を説明するための断面図Sectional drawing for demonstrating the vapor deposition apparatus of a prior art

符号の説明Explanation of symbols

１０ｂ……蒸着装置 １１……真空槽 １５……基板ホルダ １６……マスク ２０ａ〜２０ｃ……供給装置 ２１……蒸発室 ３１……タンク ３５……回転軸 ３６……突条 ３７……中心軸 ３９……有機材料 ４２……接続管 ５０……放出装置 ８１……基板   10b …… Vacuum deposition apparatus 11 …… Vacuum chamber 15 …… Substrate holder 16 …… Mask 20a to 20c …… Supply device 21 …… Evaporation chamber 31 …… Tank 35 …… Rotation axis 36 …… Projection 37 …… Center axis 39 …… Organic material 42 …… Connection pipe 50 …… Discharge device 81 …… Substrate

Claims (4)

底面に開口が形成されたタンクと、
一端が前記タンクの開口に接続され、他端が前記タンクの外部空間に露出された接続管と、
前記接続管に挿入された回転軸と、
前記回転軸を回転させる回転手段と、
前記回転軸は中心軸と、前記中心軸の周囲に螺旋状に形成された突条とを有し、
前記突条間の溝を介して、前記タンクの内部空間が、前記接続管の他端が露出する外部空間に接続された供給装置であって、
前記突条はＳｉ3Ｎ4を主成分とするセラミック材料で構成された供給装置。 A tank with an opening on the bottom;
A connection pipe having one end connected to the opening of the tank and the other end exposed to the external space of the tank;
A rotating shaft inserted into the connecting pipe;
Rotating means for rotating the rotating shaft;
The rotating shaft has a central axis and a ridge formed in a spiral shape around the central axis,
A supply device in which the internal space of the tank is connected to an external space where the other end of the connection pipe is exposed, through a groove between the protrusions,
The protrusion is a supply device made of a ceramic material whose main component is Si 3 N 4 . 前記中心軸は前記突条と同じ前記セラミック材料で構成された請求項１記載の供給装置。   The supply device according to claim 1, wherein the central axis is made of the same ceramic material as the protrusions. コイルと、前記コイルの内側の電磁場形成空間に位置する高温体と、前記コイルに接続された交流電源とを有し、
前記交流電源から前記コイルに交流電圧を印加すると、前記高温体が誘導加熱される請求項２記載の供給装置であって、
前記中心軸の先端は前記電磁場形成空間に位置する供給装置。 A coil, a high-temperature body located in the electromagnetic field forming space inside the coil, and an AC power source connected to the coil,
The supply device according to claim 2, wherein when the AC voltage is applied to the coil from the AC power source, the high temperature body is induction heated.
A supply device in which a tip of the central axis is located in the electromagnetic field forming space. 真空槽と、放出装置と、請求項３記載の供給装置とを有し、
前記供給装置の前記高温体が配置された空間が、前記放出装置の内部空間に接続され、
前記放出装置には、前記真空槽の内部空間と前記放出装置の内部空間とを接続する放出口が形成された蒸着装置。 A vacuum chamber, a discharge device, and a supply device according to claim 3;
The space where the high temperature body of the supply device is arranged is connected to the internal space of the discharge device,
A vapor deposition apparatus in which the discharge device is formed with a discharge port connecting the internal space of the vacuum chamber and the internal space of the discharge device.
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