WO2021107224A1 - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

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Publication number
WO2021107224A1
WO2021107224A1 PCT/KR2019/016746 KR2019016746W WO2021107224A1 WO 2021107224 A1 WO2021107224 A1 WO 2021107224A1 KR 2019016746 W KR2019016746 W KR 2019016746W WO 2021107224 A1 WO2021107224 A1 WO 2021107224A1
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WO
WIPO (PCT)
Prior art keywords
crucible
heater
shielding plate
deposition
deposition apparatus
Prior art date
Application number
PCT/KR2019/016746
Other languages
French (fr)
Korean (ko)
Inventor
문병준
최건훈
신대성
조영수
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to CN201980101298.6A priority Critical patent/CN114585770A/en
Priority to KR1020227006233A priority patent/KR20220039773A/en
Priority to PCT/KR2019/016746 priority patent/WO2021107224A1/en
Publication of WO2021107224A1 publication Critical patent/WO2021107224A1/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00Subject matter not provided for in other groups of this subclass

Definitions

  • the present invention relates to a deposition apparatus capable of preventing deposition of a deposition material around a nozzle even if the heat shielding performance of an evaporation source is improved.
  • Deposition is a method of coating gaseous particles with a thin solid film on the surface of an object such as metal or glass.
  • the OLED display panel manufacturing process includes a process of depositing an organic material on a glass substrate in a vacuum state.
  • the deposition process includes a process of heating a crucible in which the organic material is accommodated to evaporate the organic material into a gaseous state, and a process in which the gaseous organic material passes through a nozzle and is deposited on the substrate.
  • a crucible used for a linear evaporation source that performs deposition on the substrate by spraying deposition particles linearly along the width direction of the substrate, and an evaporation space with an opening at the top is formed a pair of crucible bodies, wherein the evaporation material is filled in the evaporation space, the evaporation material is evaporated according to heating, the evaporation particles are ejected, and the crucible body is spaced apart from each other in the width direction of the substrate; a pair of nozzle covers each having a nozzle opening through which the evaporation particles of the evaporation space are ejected, and respectively coupled to the pair of crucible bodies so as to cover the evaporation space;
  • a crucible for a linear evaporation source is disclosed, which is coupled to the nozzle port and includes a nozzle unit for guiding the evaporation particles in a width direction of the substrate so that the evapor
  • a cooling plate having a cooling line through which a refrigerant circulates is coupled to the upper surface of the nozzle cover is applied.
  • Korean Patent Registration No. 796589 discloses a deposition material storage unit in which a deposition material is located and a portion is opened; a housing surrounding the deposition material storage unit; a heating unit interposed between the housing and the deposition material storage unit; a nozzle unit connected to the opening portion of the deposition material storage unit and having an opening for spraying the deposition material; a reflective plate surrounding at least a portion of the corner of the nozzle unit; and an evaporation source disposed on the reflecting plate and including a cover covering the reflecting plate, and a deposition apparatus including the same.
  • the heat of the crucible may be cooled by the cooling plate coupled to the nozzle cover, or the cover may block the radiant heat emitted from the nozzle unit and the reflector, thereby reducing the temperature rise of the substrate.
  • cooling plate or cover provided for shielding radiant heat has a relatively low temperature
  • a vapor deposition material may be deposited on the cooling plate or cover.
  • the organic material deposited on the portion adjacent to the nozzles of the cooling plate or the cover is vaporized, the organic material may be non-uniformly deposited on the substrate, thereby degrading the quality of the display.
  • the present invention has been devised to solve the problems of the prior art, and an object of the present invention is to provide a deposition apparatus capable of preventing deposition of a deposition material around a nozzle even if the heat shielding performance of an evaporation source is improved.
  • the deposition apparatus includes a crucible in which a deposition raw material is evaporated into a deposition material; a heater unit installed outside the crucible and heating the crucible; and a cooling unit installed outside the heater unit and shielding the heater unit, wherein the crucible includes at least one nozzle for discharging the deposition material upward, and the cooling unit is located above the heater unit. It may include a shielding plate spaced apart and provided with at least one hole through which upper portions of the nozzles protrude, and a nozzle heater installed around the hole of the shielding plate.
  • the nozzle heater may have a plate shape installed on one of an upper surface or a lower surface of the shielding plate.
  • the nozzle heater may include at least one hole through which upper portions of the nozzles protrude.
  • the nozzle heater may be composed of a high emissivity ceramic heater.
  • the crucible includes a crucible body having an open top surface and evaporating a deposition material as a deposition material, and a crucible cap coupled to the upper side of the crucible body and provided with the nozzles protruding upward, the shielding plate, the crucible cap It may be installed to be spaced apart from the upper side by a predetermined interval.
  • the heater unit includes a heater frame spaced apart from the side of the crucible, a heater mounted on an inner wall of the heater frame and spaced apart from the crucible, and an upper reflector mounted on the upper end of the heater frame and extending to the periphery of the crucible.
  • the shielding plate may be installed to be spaced apart from each other by a predetermined distance above the upper reflector.
  • the cooling unit may include a side cooling block spaced apart from a side surface of the heater unit, and the shielding plate may be installed at an upper end of the side cooling block.
  • the shielding plate may have a pocket containing a working fluid generating radiant heat by a phase change therein.
  • the shielding plate may be configured as one of a vapor chamber or a heat pipe.
  • the deposition apparatus includes a nozzle heater around the shielding plate, the deposition material deposited on the shielding plate can be effectively removed by operating the nozzle heater during distribution of the deposited object even if the thermal shielding performance is improved.
  • the shielding plate since a pocket containing a working fluid that generates radiant heat by phase change is provided inside the shielding plate, the shielding plate receives heat from a heat source and circulates to reduce the hot spot temperature of the shielding plate itself, and cooling performance can be further increased.
  • FIG. 1 is a side cross-sectional view showing a deposition apparatus according to the present embodiment.
  • FIG. 2 is an exploded perspective view illustrating a deposition apparatus according to the present embodiment
  • 3 to 4 are perspective views showing main parts of the present embodiment.
  • Figure 5 is a side cross-sectional view showing an enlarged portion A of Figure 1;
  • 1 to 2 are a side cross-sectional view and an exploded perspective view illustrating a deposition apparatus according to an embodiment of the present invention.
  • the deposition apparatus of the present invention may include a vacuum chamber 1 and a deposition source 100 installed in the vacuum chamber 1 to be transportable.
  • Transfer mechanisms 3a and 3b for fixing the vapor-deposited object 2 to the ceiling of the vacuum chamber 1 are provided, and the transfer mechanisms 3a and 3b horizontally transfer the vapor-deposited object 2 to the upper side of the deposition source 100 . can be fixed.
  • the vapor-deposited object 2 may be variously configured including a glass substrate.
  • Driving units 4a and 4b on which the deposition source 100 is seated are provided in the lower portion of the vacuum chamber 1 , and at least one driving unit 4a and 4b is fixed to the vacuum chamber 1 by connecting the deposition target 2 to the vacuum chamber 1 . It can be moved horizontally or vertically.
  • the driving unit 4 may move at least the deposition source 100 in a range wider than the width of the vapor-deposited object 2 . However, the deposition source 100 may be in a fixed position without being moved.
  • the deposition source 100 is a device for supplying a deposition material for forming the thin film M on the deposition target 2 , and includes a crucible 110 accommodating the deposition material, and a heater unit provided to surround the crucible 110 . 120 and a cooling unit 130 provided to surround the heater unit 120 may be included.
  • the crucible 110 is for evaporating a deposition material into a deposition material, and may include a crucible body 111 , a crucible cap 112 , and nozzles 113 .
  • the crucible body 111 is configured in a container shape with an open upper surface, can accommodate a deposition material, and can evaporate the deposition material into a deposition material at a high temperature.
  • the crucible body 111 may be a rectangular container long in the longitudinal direction, and the length of the crucible body 111 may be longer than at least one of a horizontal length or a vertical length of the vapor-deposited object 2 .
  • the deposition raw material is a solid/liquid material charged in the crucible body 111 , and the deposition material is a gaseous material evaporated in the crucible body 111 , and the deposition raw material and the deposition material are the same, and for convenience of explanation It is merely a distinction and does not need to be limited.
  • the crucible cap 112 has a cover shape for uniformly discharging the deposition material, and may be mounted on the upper side of the crucible body 111 to block the top surface of the crucible body 111 .
  • the crucible cap 112 may be formed in a rectangular shape long in the longitudinal direction like the shape of the crucible body 111 .
  • the nozzles 113 protrude upward from the crucible cap 112 , and allow the deposition material evaporated from the crucible body 111 to pass through the crucible cap 112 .
  • the nozzles 113 may be provided in various shapes and arrangements, but is not limited thereto.
  • the hole-type nozzles 113a are provided in a line along the longitudinal direction of the crucible cap 113 at predetermined intervals, and the slit-type nozzles 113b are provided in a line at both ends of the crucible cap 112 in the longitudinal direction.
  • the upper portions of the nozzles 113 are exposed to the upper side of the heater unit 120 and the cooling unit 130 , and the length of the nozzles 113 may affect the quality of the thin film M formed of the deposit M. And, according to the quality requirements, the length of the nozzles 113 can be configured to be long.
  • the heater unit 120 is for heating the crucible 110 , and may include a heater frame 121 , a heater 122 , a lower reflector 123 , and an upper reflector 124 .
  • the heater frame 121 is installed to surround the crucible body 111 in order to mount the heater 122 , and it may be formed in a rectangular cylinder shape with upper and lower surfaces larger than the crucible body 111 and open.
  • the heater frame 121 may be configured to accommodate the crucible body 111 and the crucible cap 112 .
  • the height of the heater frame 121 may be configured to be larger than the height of the crucible body 111
  • the width of the heater frame 121 is configured to be larger than the width of the crucible body 111 , the installation space and radiation of the heater 122 . It may be configured to be larger in consideration of the heat transfer space.
  • the heater frame 121 may maintain a predetermined distance from the outer wall of the crucible body 111 and may face the outer wall of the crucible body 111 .
  • the crucible body 111 is mounted in the center of the heater frame 121 , and may be mounted so as to maintain a uniform distance between both side outer walls of the crucible body 111 and both side inner walls of the heater frame 121 .
  • the crucible body 111 may be supported to have a minimum contact area inside the heater frame 121 , and various supporting structures are provided. can be applied.
  • the heater 122 is mounted on the inner wall of the heater frame 121 to heat the crucible body 111 , and the heater 122 may be provided to maintain a predetermined distance from both sides of the crucible body 111 .
  • the lower reflector 123 and the upper reflector 124 may be formed of a material and shape capable of reflecting radiant heat generated from the heater 122 toward the lower side and the upper side of the crucible 110 .
  • the lower reflector 123 and the upper reflector 124 reflect the heat generated by the heater 122 toward the crucible 110, so that the reflected heat can heat the crucible 110 more efficiently, such as temperature distribution and temperature rise. give. Accordingly, when the heater 122 is operated to heat the internal temperature of the crucible 110 to a set temperature, power consumption of the heater 122 can be reduced.
  • the lower reflector 123 may be mounted on the lower portion of the heater frame 121 , and may be located close to the lower portion of the crucible body 111 .
  • the lower reflector 123 may face the lower portion of the crucible body 111 and may be installed to cross the lower portion of the heater frame 121 .
  • the upper reflector 124 may be mounted on the upper portion of the heater frame 121 , and may be positioned adjacent to the upper portion of the crucible cap 112 .
  • the upper reflector 124 may be provided with a hole 124h through which the upper surface of the crucible cap 112 and the nozzles 113 may pass.
  • the cooling unit 130 is to prevent the heat of the heater unit 120 from escaping to the outside, and includes side/lower cooling blocks 131 and 132 , an upper shielding plate 133 , and a nozzle heater 134 . can
  • the side cooling block 131 is installed to surround the heater frame 121 in order to block the heat of the heater unit 120 from escaping to both sides, and is larger than the heater frame 121 and has an open upper/lower direction. It may be formed in a shape.
  • the height of the side cooling block 131 may be configured to be greater than the height of the heater frame 121, and to be configured to cover up to the height of the crucible flange 112 and the crucible cap 113 seated on the heater frame 121.
  • the width of the side cooling block 131 is configured to be larger than the width of the heater frame 121, and may be configured to be larger in consideration of a predetermined insulating space.
  • the side cooling block 131 may maintain a predetermined distance from the outer wall of the heater frame 121 and face the outer wall of the heater frame 121 .
  • the heater frame 121 is mounted in the center of the side cooling block 131 , and may be mounted to maintain a uniform distance between both outer walls of the heater frame 121 and both inner walls of the side cooling block 131 .
  • the side cooling block 131 may be configured in a form in which a flow path for cooling is built-in, but may also be configured in a form in which a heat insulator is built-in, but is not limited thereto.
  • the lower surface cooling block 132 is installed under the side cooling block 131 in order to block the heat of the heater unit 120 from escaping to the lower side, and may be opposite to the lower side of the lower reflector 123 .
  • the lower surface cooling block 132 may be integrally configured with the side cooling block 131 , and the lower surface cooling block 132 may be configured in a form in which a flow path for cooling or a heat insulating material is embedded like the side cooling block 131 . and may be composed of only a kind of frame.
  • the lower cooling block 132 may be moved along the upper side of the driving units 4a and 4b provided in the vacuum chamber 1 described above, but is not limited thereto.
  • the shielding plate 133 is installed on the upper side of the cooling block 131 in order to block the heat of the heater unit 120 from escaping to the upper side, and may be opposite to the upper side of the upper reflector 124 .
  • the shielding plate 133 is mounted on the top of the side cooling block 131 so as to cover the open upper surface of the side cooling block 131 , at least a portion of the crucible cap 113 is opposed, and the nozzles 113 top outside A plurality of holes 133H and 133h that can be exposed to the
  • the shielding plate 133 is configured to shield the heat of the heater unit 120 to minimize the effect on the thin film M formed on the deposited material 2 or the deposited object 2 , which will be described in detail below.
  • the nozzle heater 134 is installed on the shielding plate 133 so as to be adjacent to the nozzles 113 , and may be selectively operated or may be operated at all times, and a detailed configuration will be described below.
  • the temperature of the shielding plate 133 is relatively low, a deposition material vaporized through the nozzles 113 may be deposited on the shielding plate 133 .
  • the material is increased by increasing the amount of the shielding plate. (133) can be prevented from being deposited.
  • FIG. 3 to 4 are perspective views showing main parts of the present embodiment, and FIG. 5 is an enlarged side cross-sectional view of part A of FIG. 1 .
  • the nozzle heater 134 may be installed on an upper surface or a lower surface of the shielding plate 133 to be adjacent to the nozzles.
  • the deposition material is sprayed through the nozzles 113, the deposition material passing through the nozzles 113 is diffused to reach the deposition target (2),
  • the injection amount of the deposition material may be more sprayed from both sides of the crucible body 111 than the longitudinal center of the crucible body 111 .
  • the hole-type nozzles 113a are provided to be exposed to the first holes 133h of the shielding plate at regular intervals along the longitudinal direction of the crucible body 111, and the slit-type nozzles 113b are provided in the crucible.
  • the main body 111 may be provided to be exposed to the second hole 133H of the shielding plate in a line on both sides in the longitudinal direction.
  • the slit-type nozzles 113b are located more densely than the hole-type nozzles 113a, the amount of deposition material injected from the slit-type nozzles 113b can be increased, but the slit-type nozzles 113b) A deposition material may be more easily deposited around the adjacent shielding plate 133 , that is, around the second hole 133H of the shielding plate.
  • the nozzle heater 134 is preferably installed in the second hole 133H of the shielding plate, but is not limited thereto.
  • the nozzle heater 134 may be installed on one of the upper surface or the lower surface of the shielding plate 133, and the nozzle heater 134 may be composed of a high emissivity ceramic heater that can be heated to a high temperature in a short time, and the deposited material ( 2) can be operated during logistics movement.
  • the deposition material is detected on the shielding plate 133 around the nozzles 113 , and the deposition material accumulated on the shielding plate 133 is removed. can be selectively activated to
  • the nozzle heater 134 When the deposition material is accumulated on the shielding plate 133 , the nozzle heater 134 is operated while the vapor-deposited material 2 enters and exits the chamber 1 , and the deposition material deposited on the shielding plate 133 is quickly volatilized. can do it
  • the nozzle heater 134 is stopped, and some deposition materials may be accumulated on the shielding plate 133, but as described above, by volatilizing the deposition materials during distribution of the deposition target 2, , it is possible to prevent the deposition material accumulated on the shielding plate 133 from affecting the quality of the thin film during the deposition process.
  • the shielding plate 133 may be formed in a type of plate shape made of an insulating material or a material having a high reflectance, but may be configured in a pocket shape containing a working fluid that generates radiant heat by a phase change as shown in FIG. 5 .
  • the shielding plate 133 may be configured in the form of a vapor chamber or a heat pipe.
  • the periphery of the holes 133H and 133h of the shielding plate absorbs heat from the nozzle cap 112 and the nozzle heater 134, and the fluid inside the periphery of the holes 133H and 133h of the shielding plate evaporates, and then the shielding plate 133 ) may be moved from the periphery of the holes 133H and 133h of the shielding plate to the outer part of the shielding plate 133 along the inner inner flow path.
  • the outer part of the shield plate 133 radiates heat to the side cooling member 133 and its upper side, and the fluid inside the outer part of the shield plate 133 is condensed, and then the outer flow path inside the shield plate 133 is closed. Accordingly, it may move from the outer portion of the shielding plate 133 to the peripheral portions of the holes 133H and 133h of the shielding plate.
  • heat around the holes 133H and 133h of the shielding plate may be moved to the outside of the shielding plate 133 , and the temperature of the hot spot of the shielding plate 133 may be reduced.
  • the deposition material may be deposited on the shielding plate 133 side during the deposition process. As a result, the deposition material deposited on the shielding plate 133 can be quickly removed.
  • This embodiment may provide a deposition apparatus for depositing an organic material in a thin film shape on a glass substrate when manufacturing an OLED display panel.

Abstract

A deposition apparatus according to the present embodiment comprises: a crucible for evaporating deposition source material into a deposition substance; a heater unit, provided outside the crucible, for heating the crucible; and a cooling portion provided outside the heater unit and for shielding the heater unit. The crucible comprises one or more nozzles for releasing the deposition substance upward. The cooling unit comprises: a shielding plate which is positioned away above the heater unit and has one or more holes through which the upper part of the nozzles protrude; and a nozzle heater provided near the holes of the shielding plate.

Description

증착 장치deposition apparatus
본 발명은 증발원의 열 차폐 성능을 높이더라도 노즐 주변에 증착 물질의 증착을 방지할 수 있는 증착 장치에 관한 것이다.The present invention relates to a deposition apparatus capable of preventing deposition of a deposition material around a nozzle even if the heat shielding performance of an evaporation source is improved.
증착(deposition)이란 기체 상태의 입자를, 금속, 유리(glass) 등과 같은 물체의 표면에 얇은 고체 막을 입히는 방법이다.Deposition is a method of coating gaseous particles with a thin solid film on the surface of an object such as metal or glass.
최근에는 TV, 휴대폰 등과 같은 전자 기기에 OLED(Organic Light Emitting Diodes) 디스플레이의 사용이 증가하면서, OLED 디스플레이 패널을 제조하는 장치에 대한 연구가 활발하다. 특히, OLED 디스플레이 패널 제조 공정은 진공 상태에서 유리 기판에 유기 물질을 증착시키는 공정을 포함한다.Recently, as the use of organic light emitting diodes (OLED) displays increases in electronic devices such as TVs and mobile phones, research on devices for manufacturing OLED display panels is active. In particular, the OLED display panel manufacturing process includes a process of depositing an organic material on a glass substrate in a vacuum state.
구체적으로, 증착 공정은 유기 물질이 수용된 도가니(crucible)를 가열하여 유기 물질을 기체 상태로 증발시키는 공정과, 기체 상태의 유기 물질이 노즐(nozzle)을 통과하여 기판에 증착되는 공정을 포함한다.Specifically, the deposition process includes a process of heating a crucible in which the organic material is accommodated to evaporate the organic material into a gaseous state, and a process in which the gaseous organic material passes through a nozzle and is deposited on the substrate.
최근 들어, 모바일이나 TV 에 들어가는 OLED 디스플레이는 화질 향상을 위하여 미세 공정 패턴이 들어가는데, 미세 공정 패턴은 증착 공정 중 열의 영향을 많이 받는다.Recently, in OLED displays used in mobile devices or TVs, fine process patterns are used to improve image quality, and the fine process patterns are greatly affected by heat during the deposition process.
한국등록특허 제1938219호(2017.02.24.출원)에는 기판의 폭 방향을 따라 선형으로 증착입자를 분사하여 상기 기판에 증착을 수행하는 선형 증발원에 사용되는 도가니로서, 상부가 개구되는 증발공간이 형성되고 상기 증발공간에 증착물질이 충전되며 가열에 따라 상기 증착물질이 증발되어 증발입자가 분출되며, 상기 기판의 폭 방향으로 서로 이격되는 한 쌍의 도가니 본체와; 상기 증발공간의 상기 증발입자가 분출되는 노즐구가 형성되며, 상기 증발공간을 커버하도록 한 쌍의 상기 도가니 본체에 각각 결합되는 한 쌍의 노즐커버와; 상기 노즐구에 결합되고, 상기 증발입자가 선형을 이루어 분출되도록 상기 기판의 폭 방향으로 유도하는 노즐부를 포함하는 선형 증발원용 도가니가 개시된다.In Korea Patent No. 1938219 (applied on Feb. 24, 2017), a crucible used for a linear evaporation source that performs deposition on the substrate by spraying deposition particles linearly along the width direction of the substrate, and an evaporation space with an opening at the top is formed a pair of crucible bodies, wherein the evaporation material is filled in the evaporation space, the evaporation material is evaporated according to heating, the evaporation particles are ejected, and the crucible body is spaced apart from each other in the width direction of the substrate; a pair of nozzle covers each having a nozzle opening through which the evaporation particles of the evaporation space are ejected, and respectively coupled to the pair of crucible bodies so as to cover the evaporation space; A crucible for a linear evaporation source is disclosed, which is coupled to the nozzle port and includes a nozzle unit for guiding the evaporation particles in a width direction of the substrate so that the evaporation particles are ejected in a linear fashion.
또한, 도가니에서 발생하는 열을 냉각시키기 위하여 냉매가 순환하는 쿨링 라인이 형성된 쿨링 플레이트가 노즐 커버의 상면에 결합되는 구조가 적용된다.In addition, in order to cool the heat generated in the crucible, a cooling plate having a cooling line through which a refrigerant circulates is coupled to the upper surface of the nozzle cover is applied.
한국등록특허 제796589호(2005.02.17.출원)에는 증착 물질이 위치하고 일부분이 개구된 증착 물질 저장부; 상기 증착 물질 저장부를 감싸는 하우징; 상기 하우징과 상기 증착 물질 저장부 사이에 개재된 가열부; 상기 증착 물질 저장부의 개구된 부분과 연결되고 상기 증착 물질을 분사하기 위한 개구부를 가지는 노즐부; 상기 노즐부의 적어도 일부의 모서리를 감싸는 반사판; 및 상기 반사판 상에 위치하고, 상기 반사판을 덮는 커버를 포함하는 증발원 및 그를 포함하는 증착장치가 개시된다.Korean Patent Registration No. 796589 (filed on Feb. 17, 2005) discloses a deposition material storage unit in which a deposition material is located and a portion is opened; a housing surrounding the deposition material storage unit; a heating unit interposed between the housing and the deposition material storage unit; a nozzle unit connected to the opening portion of the deposition material storage unit and having an opening for spraying the deposition material; a reflective plate surrounding at least a portion of the corner of the nozzle unit; and an evaporation source disposed on the reflecting plate and including a cover covering the reflecting plate, and a deposition apparatus including the same.
상기의 기술들에 따르면, 노즐 커버에 결합된 쿨링 플레이트에 의해 도가니의 열을 냉각시킬 수 있거나, 커버가 노즐부와 반사판에서 방출되는 복사열을 차단함으로서, 기판의 온도 상승을 감소시킬 수 있다.According to the above techniques, the heat of the crucible may be cooled by the cooling plate coupled to the nozzle cover, or the cover may block the radiant heat emitted from the nozzle unit and the reflector, thereby reducing the temperature rise of the substrate.
그런데, 복사열 차폐를 위하여 구비되는 쿨링 플레이트 또는 커버는 상대적으로 온도가 낮으므로, 기체 상태의 증착 물질이 쿨링 플레이트 또는 커버에 증착될 수 있다.However, since the cooling plate or cover provided for shielding radiant heat has a relatively low temperature, a vapor deposition material may be deposited on the cooling plate or cover.
증착 공정이 다시 진행되면, 쿨링 플레이트 또는 커버 중 노즐들과 인접한 부분에 증착된 유기 물질이 기화되기 때문에 기판에 유기 물질이 불균일하게 증착될 수 있고, 이로 인하여 디스플레이의 품질이 저하되는 문제점이 있다.When the deposition process is performed again, since the organic material deposited on the portion adjacent to the nozzles of the cooling plate or the cover is vaporized, the organic material may be non-uniformly deposited on the substrate, thereby degrading the quality of the display.
본 발명은 상기한 종래 기술의 문제점을 해결하기 위하여 안출된 것으로서, 증발원의 열 차폐 성능을 높이더라도 노즐 주변에 증착 물질의 증착을 방지할 수 있는 증착 장치를 제공하는데 그 목적이 있다.The present invention has been devised to solve the problems of the prior art, and an object of the present invention is to provide a deposition apparatus capable of preventing deposition of a deposition material around a nozzle even if the heat shielding performance of an evaporation source is improved.
본 실시예에 따른 증착 장치는 증착 원료가 증착 물질로 증발시키는 도가니; 상기 도가니 외측에 설치되고, 상기 도가니를 가열하는 히터부; 및 상기 히터부 외측에 설치되고, 상기 히터부를 차폐시키는 냉각부;를 포함하고, 상기 도가니는, 상기 증착 물질을 상측으로 방출시키는 적어도 하나 이상의 노즐을 포함하고, 상기 냉각부는, 상기 히터부 상측에 이격되고 상기 노즐들의 상부가 돌출되는 적어도 하나 이상의 홀이 구비된 차폐판과, 상기 차폐판의 홀 주변에 설치되는 노즐 히터를 포함할 수 있다.The deposition apparatus according to the present embodiment includes a crucible in which a deposition raw material is evaporated into a deposition material; a heater unit installed outside the crucible and heating the crucible; and a cooling unit installed outside the heater unit and shielding the heater unit, wherein the crucible includes at least one nozzle for discharging the deposition material upward, and the cooling unit is located above the heater unit. It may include a shielding plate spaced apart and provided with at least one hole through which upper portions of the nozzles protrude, and a nozzle heater installed around the hole of the shielding plate.
상기 노즐 히터는, 상기 차폐판의 상면 또는 하면 중 하나에 설치되는 플레이트 형상으로 구성될 수 있다.The nozzle heater may have a plate shape installed on one of an upper surface or a lower surface of the shielding plate.
상기 노즐 히터는, 상기 노즐들의 상부가 돌출되는 적어도 하나 이상의 홀이 구비될 수 있다.The nozzle heater may include at least one hole through which upper portions of the nozzles protrude.
상기 노즐 히터는, 고방사율 세라믹 히터로 구성될 수 있다.The nozzle heater may be composed of a high emissivity ceramic heater.
상기 도가니는, 상면이 개방되고, 증착 원료가 증착 물질로 증발되는 도가니 본체와, 상기 도가니 본체 상측에 결합되고 상기 노즐들이 상향 돌출되게 구비되는 도가니 캡을 포함하며, 상기 차폐판은, 상기 도가니 캡 상측에 소정 간격 이격되게 설치될 수 있다.The crucible includes a crucible body having an open top surface and evaporating a deposition material as a deposition material, and a crucible cap coupled to the upper side of the crucible body and provided with the nozzles protruding upward, the shielding plate, the crucible cap It may be installed to be spaced apart from the upper side by a predetermined interval.
상기 히터부는, 상기 도가니 측면에 이격되는 히터 프레임과, 상기 히터 프레임의 내벽에 장착되고 상기 도가니와 이격되는 히터와, 상기 히터 프레임의 상단에 장착되고 상기 도가니 주변까지 연장된 상부 리플렉터(reflector)를 포함하며, 상기 차폐판은, 상기 상부 리플렉터 상측에 소정 간격 이격되게 설치될 수 있다.The heater unit includes a heater frame spaced apart from the side of the crucible, a heater mounted on an inner wall of the heater frame and spaced apart from the crucible, and an upper reflector mounted on the upper end of the heater frame and extending to the periphery of the crucible. The shielding plate may be installed to be spaced apart from each other by a predetermined distance above the upper reflector.
상기 냉각부는, 상기 히터부 측면에 이격되는 측면 쿨링 블록을 포함하고, 상기 차폐판은, 상기 측면 쿨링 블록 상단에 설치될 수 있다.The cooling unit may include a side cooling block spaced apart from a side surface of the heater unit, and the shielding plate may be installed at an upper end of the side cooling block.
상기 차폐판은, 상변화에 의해 복사열을 발생시키는 작동 유체가 담긴 포켓이 내부에 구비될 수 있다.The shielding plate may have a pocket containing a working fluid generating radiant heat by a phase change therein.
상기 차폐판은, 베이퍼 챔버(vapor chamber) 또는 히트 파이프(heat pipe) 중 하나로 구성될 수 있다.The shielding plate may be configured as one of a vapor chamber or a heat pipe.
본 실시예에 따른 증착 장치는 차폐판 주변에 노즐 히터를 구비함으로서, 열차폐 성능을 높이더라도 피증착물의 물류 이동 시에 노즐 히터를 작동하여 차폐판에 증착된 증착 물질을 효과적으로 제거할 수 있다. Since the deposition apparatus according to the present embodiment includes a nozzle heater around the shielding plate, the deposition material deposited on the shielding plate can be effectively removed by operating the nozzle heater during distribution of the deposited object even if the thermal shielding performance is improved.
또한, 차폐판을 상변화에 의해 복사열을 발생시키는 작동 유체가 담긴 포켓이 내부에 구비됨으로서, 차폐판이 열원에서 열을 공급받아 순환되도록 하여 차폐판 자체의 핫 스팟 온도를 감소시킬 수 있고, 냉각 성능을 더욱 높일 수 있다.In addition, since a pocket containing a working fluid that generates radiant heat by phase change is provided inside the shielding plate, the shielding plate receives heat from a heat source and circulates to reduce the hot spot temperature of the shielding plate itself, and cooling performance can be further increased.
따라서, 박막 두께를 균일하게 형성할 수 있고, 복사열에 의한 피증착물의 온도 상승을 방지할 수 있으므로, 이러한 공정으로 제조된 디스플레이의 품질을 높일 수 있다. Therefore, it is possible to uniformly form a thin film thickness, and to prevent a temperature rise of a vapor-deposited object due to radiant heat, so that the quality of the display manufactured by this process can be improved.
도 1은 본 실시예에 따른 증착 장치가 도시된 측단면도.1 is a side cross-sectional view showing a deposition apparatus according to the present embodiment.
도 2는 본 실시예에 따른 증착 장치가 도시된 분해 사시도.2 is an exploded perspective view illustrating a deposition apparatus according to the present embodiment;
도 3 내지 도 4는 본 실시예의 주요부가 도시된 사시도.3 to 4 are perspective views showing main parts of the present embodiment.
도 5는 도 1의 A 부분이 확대 도시된 측단면도.Figure 5 is a side cross-sectional view showing an enlarged portion A of Figure 1;
도 1 내지 도 2는 본 발명의 일 실시예에 따른 증착 장치가 도시된 측단면도 및 분해 사시도이다.1 to 2 are a side cross-sectional view and an exploded perspective view illustrating a deposition apparatus according to an embodiment of the present invention.
본 발명의 증착 장치는, 진공 챔버(1)와, 진공 챔버(1) 내부에 이송 가능하게 설치된 증착원(100)을 포함할 수 있다.The deposition apparatus of the present invention may include a vacuum chamber 1 and a deposition source 100 installed in the vacuum chamber 1 to be transportable.
진공 챔버(1)의 천장에 피증착물(2)을 고정시키는 이송 기구(3a,3b)가 구비되고, 이송 기구(3a,3b)는 피증착물(2)을 증착원(100) 상측에 수평하게 고정시킬 수 있다. 피증착물(2)은 유리(glass) 기판을 포함하여 다양하게 구성될 수 있다. Transfer mechanisms 3a and 3b for fixing the vapor-deposited object 2 to the ceiling of the vacuum chamber 1 are provided, and the transfer mechanisms 3a and 3b horizontally transfer the vapor-deposited object 2 to the upper side of the deposition source 100 . can be fixed. The vapor-deposited object 2 may be variously configured including a glass substrate.
진공 챔버(1)의 하부에 증착원(100)이 안착되는 구동부(4a,4b)가 구비되고, 적어도 하나 이상의 구동부(4a,4b)를 진공 챔버(1)에 고정된 피증착물(2)의 가로 방향 또는 세로 방향으로 이동시킬 수 있다. 구동부(4)는 적어도 증착원(100)을 피증착물(2)의 너비 보다 넓은 범위로 이동시킬 수 있다. 하지만, 증착원(100)은 이동되지 않고 정 위치에 있을 수 있다. Driving units 4a and 4b on which the deposition source 100 is seated are provided in the lower portion of the vacuum chamber 1 , and at least one driving unit 4a and 4b is fixed to the vacuum chamber 1 by connecting the deposition target 2 to the vacuum chamber 1 . It can be moved horizontally or vertically. The driving unit 4 may move at least the deposition source 100 in a range wider than the width of the vapor-deposited object 2 . However, the deposition source 100 may be in a fixed position without being moved.
증착원(100)은 피증착물(2)에 박막(M)을 형성시키기 위한 증착 물질을 공급하는 장치로서, 증착 원료가 수용되는 도가니(110)와, 도가니(110)를 감싸도록 구비된 히터부(120)와, 히터부(120)를 감싸도록 구비된 냉각부(130)를 포함할 수 있다.The deposition source 100 is a device for supplying a deposition material for forming the thin film M on the deposition target 2 , and includes a crucible 110 accommodating the deposition material, and a heater unit provided to surround the crucible 110 . 120 and a cooling unit 130 provided to surround the heater unit 120 may be included.
도가니(110)는 증착 원료를 증착 물질로 증발시키기 위한 것으로서, 도가니 본체(111)와, 도가니 캡(112)과, 노즐들(113)로 구성될 수 있다. The crucible 110 is for evaporating a deposition material into a deposition material, and may include a crucible body 111 , a crucible cap 112 , and nozzles 113 .
도가니 본체(111)는 상면이 개방된 용기 형상으로 구성되고, 증착 원료를 수용할 수 있으며, 고온 하에서 증착 원료를 증착 물질로 증발시킬 수 있다. 도가니 본체(111)는 길이 방향으로 긴 사각 형상의 용기일 수 있고, 도가니 본체(111)의 길이는 적어도 피증착물(2)의 가로 길이 또는 세로 길이 중 하나보다 더 길게 구성될 수 있다. The crucible body 111 is configured in a container shape with an open upper surface, can accommodate a deposition material, and can evaporate the deposition material into a deposition material at a high temperature. The crucible body 111 may be a rectangular container long in the longitudinal direction, and the length of the crucible body 111 may be longer than at least one of a horizontal length or a vertical length of the vapor-deposited object 2 .
증착 원료는 도가니 본체(111)에 충전되는 고체/액체 상태의 물질이고, 증착 물질은 도가니 본체(111)에서 증발되는 기체 상태의 물질로서, 증착 원료와 증착 물질은 동일하며, 설명의 편의를 위하여 구분한 것에 불과하며, 제한될 필요는 없다.The deposition raw material is a solid/liquid material charged in the crucible body 111 , and the deposition material is a gaseous material evaporated in the crucible body 111 , and the deposition raw material and the deposition material are the same, and for convenience of explanation It is merely a distinction and does not need to be limited.
도가니 캡(112)는 증착 물질을 균일하게 토출시키는 커버 형상으로 구성되고, 도가니 본체(111)의 상면을 막아주도록 도가니 본체(111) 상측에 장착될 수 있다. 도가니 캡(112)은 도가니 본체(111)의 형상과 같이 길이 방향으로 긴 사각 형상으로 형성될 수 있다. The crucible cap 112 has a cover shape for uniformly discharging the deposition material, and may be mounted on the upper side of the crucible body 111 to block the top surface of the crucible body 111 . The crucible cap 112 may be formed in a rectangular shape long in the longitudinal direction like the shape of the crucible body 111 .
노즐들(113)은 도가니 캡(112)에 상향 돌출되고, 도가니 본체(111)에서 증발되는 증착 물질이 도가니 캡(112)을 통과할 수 있도록 한다. 증착 물질을 피증착물(2)로 균일하게 공급하기 위하여 노즐들(113)은 다양한 형상과 배열로 구비될 수 있으며, 한정되지 아니한다.The nozzles 113 protrude upward from the crucible cap 112 , and allow the deposition material evaporated from the crucible body 111 to pass through the crucible cap 112 . In order to uniformly supply the deposition material to the deposition target 2 , the nozzles 113 may be provided in various shapes and arrangements, but is not limited thereto.
홀 타입의 노즐들(113a)은 도가니 캡(113)의 길이 방향을 따라 일렬로 소정 간격을 두고 구비되고, 슬릿 타입의 노즐들(113b)은 도가니 캡(112)의 길이 방향 양단에 일렬로 구비될 수 있다.The hole-type nozzles 113a are provided in a line along the longitudinal direction of the crucible cap 113 at predetermined intervals, and the slit-type nozzles 113b are provided in a line at both ends of the crucible cap 112 in the longitudinal direction. can be
노즐들(113)의 상부가 히터부(120)와 냉각부(130) 상측으로 노출되는데, 노즐들(113)의 길이는 피증착물(M)의 형성되는 박막(M)의 품질에 영향을 미칠 수 있으며, 품질 요구에 따라 노즐들(113)의 길이를 길게 구성할 수 있다. The upper portions of the nozzles 113 are exposed to the upper side of the heater unit 120 and the cooling unit 130 , and the length of the nozzles 113 may affect the quality of the thin film M formed of the deposit M. And, according to the quality requirements, the length of the nozzles 113 can be configured to be long.
히터부(120)는 도가니(110)를 가열하기 위한 것으로서, 히터 프레임(121)과, 히터(122)와, 하부 리플렉터(123)와, 상부 리플렉터(124)로 구성될 수 있다. The heater unit 120 is for heating the crucible 110 , and may include a heater frame 121 , a heater 122 , a lower reflector 123 , and an upper reflector 124 .
히터 프레임(121)은 히터(122)를 장착하기 위하여 도가니 본체(111)를 감싸도록 설치되는데, 도가니 본체(111) 보다 크고 상/하면이 개방된 사각통 형상으로 형성될 수 있다. The heater frame 121 is installed to surround the crucible body 111 in order to mount the heater 122 , and it may be formed in a rectangular cylinder shape with upper and lower surfaces larger than the crucible body 111 and open.
히터 프레임(121)은 도가니 본체(111)와 도가니 캡(112)을 수용하도록 구성될 수 있다. 히터 프레임(121)의 높이는 도가니 본체(111)의 높이 보다 크게 구성될 수 있고, 히터 프레임(121)의 너비는 도가니 본체(111)의 너비 보다 크게 구성되는데, 히터(122)의 설치 공간 및 복사 열전달 공간을 고려하여 더 크게 구성될 수 있다. The heater frame 121 may be configured to accommodate the crucible body 111 and the crucible cap 112 . The height of the heater frame 121 may be configured to be larger than the height of the crucible body 111 , and the width of the heater frame 121 is configured to be larger than the width of the crucible body 111 , the installation space and radiation of the heater 122 . It may be configured to be larger in consideration of the heat transfer space.
히터 프레임(121)은 도가니 본체(111)의 외벽과 소정의 간격을 유지하고, 도가니 본체(111)의 외벽과 대향될 수 있다. 도가니 본체(111)가 히터 프레임(121)의 중심에 장착되는데, 도가니 본체(111)의 양측 외벽과 히터 프레임(121)의 양측 내벽 사이에 균일한 간격을 유지하도록 장착될 수 있다. The heater frame 121 may maintain a predetermined distance from the outer wall of the crucible body 111 and may face the outer wall of the crucible body 111 . The crucible body 111 is mounted in the center of the heater frame 121 , and may be mounted so as to maintain a uniform distance between both side outer walls of the crucible body 111 and both side inner walls of the heater frame 121 .
히터 프레임(121)으로부터 도가니 본체(111)로 열이 전도되는 것을 최소화시키기 위하여, 도가니 본체(111)는 히터 프레임(121) 내측에 최소한의 접촉 면적을 가지도록 지지될 수 있으며, 다양한 지지 구조가 적용될 수 있다.In order to minimize the conduction of heat from the heater frame 121 to the crucible body 111 , the crucible body 111 may be supported to have a minimum contact area inside the heater frame 121 , and various supporting structures are provided. can be applied.
히터(122)는 도가니 본체(111)를 가열하기 위하여 히터 프레임(121)의 내벽에 장착되는데, 히터(122)가 도가니 본체(111)의 양측에서 소정 간격을 유지하도록 구비될 수 있다. The heater 122 is mounted on the inner wall of the heater frame 121 to heat the crucible body 111 , and the heater 122 may be provided to maintain a predetermined distance from both sides of the crucible body 111 .
하부 리플렉터(123)와 상부 리플렉터(124)는 히터(122)에서 발생되는 복사 열을 도가니(110)의 하측과 상측으로 반사시킬 수 있는 소재 및 형상으로 구성될 수 있다.The lower reflector 123 and the upper reflector 124 may be formed of a material and shape capable of reflecting radiant heat generated from the heater 122 toward the lower side and the upper side of the crucible 110 .
하부 리플렉터(123)와 상부 리플렉터(124)는 히터(122)에서 발생되는 열을 도가니(110) 측으로 반사시킴으로서, 반사열이 도가니(110)를 온도 분포, 승온 등 가열을 더욱 효율적으로 할 수 있게 해 준다. 이에 따라, 도가니(110) 내부의 온도를 설정 온도로 가열하기 위하여 히터(122)를 작동시킬 때, 히터(122)의 소비 전력을 저감시킬 수 있다.The lower reflector 123 and the upper reflector 124 reflect the heat generated by the heater 122 toward the crucible 110, so that the reflected heat can heat the crucible 110 more efficiently, such as temperature distribution and temperature rise. give. Accordingly, when the heater 122 is operated to heat the internal temperature of the crucible 110 to a set temperature, power consumption of the heater 122 can be reduced.
하부 리플렉터(123)는 히터 프레임(121)의 하부에 장착될 수 있는데, 도가니 본체(111)의 하부에 근접하게 위치될 수 있다. 하부 리플렉터(123)는 도가니 본체(111)의 하부와 대향되며, 히터 프레임(121)의 하부를 가로지르도록 설치될 수 있다.The lower reflector 123 may be mounted on the lower portion of the heater frame 121 , and may be located close to the lower portion of the crucible body 111 . The lower reflector 123 may face the lower portion of the crucible body 111 and may be installed to cross the lower portion of the heater frame 121 .
상부 리플렉터(124)는 히터 프레임(121)의 상부에 장착될 수 있는데, 도가니 캡(112)의 상부에 근접하게 위치될 수 있다. 상부 리플렉터(124)는 도가니 캡(112)의 상면과 노즐들(113)이 관통될 수 있는 홀(124h)이 구비될 수 있다. The upper reflector 124 may be mounted on the upper portion of the heater frame 121 , and may be positioned adjacent to the upper portion of the crucible cap 112 . The upper reflector 124 may be provided with a hole 124h through which the upper surface of the crucible cap 112 and the nozzles 113 may pass.
냉각부(130)는 히터부(120)의 열이 외부로 빠져나가는 것을 방지하기 위한 것으로서, 측/하면 쿨링 블록(131,132)과, 상부 차폐판(133)과, 노즐 히터(134)를 포함할 수 있다. The cooling unit 130 is to prevent the heat of the heater unit 120 from escaping to the outside, and includes side/lower cooling blocks 131 and 132 , an upper shielding plate 133 , and a nozzle heater 134 . can
측면 쿨링 블록(131)은 히터부(120)의 열이 양측으로 빠져나가는 것을 차단하기 위하여 히터 프레임(121)을 감싸도록 설치되는데, 히터 프레임(121) 보다 크고 상/하 방향이 개방된 사각통 형상으로 형성될 수 있다. The side cooling block 131 is installed to surround the heater frame 121 in order to block the heat of the heater unit 120 from escaping to both sides, and is larger than the heater frame 121 and has an open upper/lower direction. It may be formed in a shape.
측면 쿨링 블록(131)의 높이는 히터 프레임(121)의 높이 보다 크게 구성될 수 있는데, 히터 프레임(121)에 안착되는 도가니 플랜지(112)와 도가니 캡(113)의 높이까지 커버할 수 있도록 구성될 수 있다. 측면 쿨링 블록(131)의 너비는 히터 프레임(121)의 너비 보다 크게 구성되는데, 소정의 단열 공간을 고려하여 더 크게 구성될 수 있다.The height of the side cooling block 131 may be configured to be greater than the height of the heater frame 121, and to be configured to cover up to the height of the crucible flange 112 and the crucible cap 113 seated on the heater frame 121. can The width of the side cooling block 131 is configured to be larger than the width of the heater frame 121, and may be configured to be larger in consideration of a predetermined insulating space.
측면 쿨링 블록(131)은 히터 프레임(121)의 외벽과 소정의 간격을 유지하고, 히터 프레임(121)의 외벽과 대향될 수 있다. 히터 프레임(121)이 측면 쿨링 블록(131)의 중심에 장착되는데, 히터 프레임(121)의 양측 외벽과 측면 쿨링 블록(131)의 양측 내벽 사이에 균일한 간격을 유지하도록 장착될 수 있다.The side cooling block 131 may maintain a predetermined distance from the outer wall of the heater frame 121 and face the outer wall of the heater frame 121 . The heater frame 121 is mounted in the center of the side cooling block 131 , and may be mounted to maintain a uniform distance between both outer walls of the heater frame 121 and both inner walls of the side cooling block 131 .
측면 쿨링 블록(131)은 냉각을 위한 유로 등이 내장된 형태로 구성될 수 있으나, 단열재가 내장된 형태로도 구성될 수 있으며, 한정되지 아니한다. The side cooling block 131 may be configured in a form in which a flow path for cooling is built-in, but may also be configured in a form in which a heat insulator is built-in, but is not limited thereto.
하면 쿨링 블록(132)은 히터부(120)의 열이 하측으로 빠져나가는 것을 차단하기 위하여 측면 쿨링 블록(131)의 하부에 설치되는데, 하부 리플렉터(123) 하측에 대향될 수 있다. The lower surface cooling block 132 is installed under the side cooling block 131 in order to block the heat of the heater unit 120 from escaping to the lower side, and may be opposite to the lower side of the lower reflector 123 .
하면 쿨링 블록(132)은 측면 쿨링 블록(131)과 일체로 구성될 수 있고, 하면 쿨링 블록(132)은 측면 쿨링 블록(131)과 같이 냉각을 위한 유로 또는 단열재 등이 내장된 형태로 구성될 수 있으며, 일종의 프레임으로만 구성되더라도 무방하다. The lower surface cooling block 132 may be integrally configured with the side cooling block 131 , and the lower surface cooling block 132 may be configured in a form in which a flow path for cooling or a heat insulating material is embedded like the side cooling block 131 . and may be composed of only a kind of frame.
하면 쿨링 블록(132)은 상기에서 설명한 진공 챔버(1) 내부에 구비된 구동부(4a,4b) 상측을 따라 이동될 수 있으나, 한정되지 아니한다. The lower cooling block 132 may be moved along the upper side of the driving units 4a and 4b provided in the vacuum chamber 1 described above, but is not limited thereto.
차폐판(133)은 히터부(120)의 열이 상측으로 빠져나가는 것을 차단하기 위하여 측면 쿨링 블록(131) 상부에 설치되는데, 상부 리플렉터(124) 상측에 대향될 수 있다.The shielding plate 133 is installed on the upper side of the cooling block 131 in order to block the heat of the heater unit 120 from escaping to the upper side, and may be opposite to the upper side of the upper reflector 124 .
차폐판(133)은 측면 쿨링 블록(131)의 개방된 상면을 덮어도록 측면 쿨링 블록(131) 상단에 장착되는데, 적어도 도가니 캡(113)의 일부와 대향되고, 노즐들(113) 상부를 외부로 노출시킬 수 있는 복수개의 홀(133H,133h)이 구비될 수 있다. The shielding plate 133 is mounted on the top of the side cooling block 131 so as to cover the open upper surface of the side cooling block 131 , at least a portion of the crucible cap 113 is opposed, and the nozzles 113 top outside A plurality of holes 133H and 133h that can be exposed to the
차폐판(133)은 히터부(120)의 열을 차폐하여 증착물(2) 또는 피증착물(2)에 형성되는 박막(M)에 미치는 영향을 최소화하도록 구성되는데, 하기에서 자세히 설명하기로 한다.The shielding plate 133 is configured to shield the heat of the heater unit 120 to minimize the effect on the thin film M formed on the deposited material 2 or the deposited object 2 , which will be described in detail below.
노즐 히터(134)는 노즐들(113)과 인접하도록 차폐판(133)에 설치되고, 선택적으로 작동되거나, 상시 작동될 수 있으며, 자세한 구성은 하기에서 설명하기로 한다. The nozzle heater 134 is installed on the shielding plate 133 so as to be adjacent to the nozzles 113 , and may be selectively operated or may be operated at all times, and a detailed configuration will be described below.
차폐판(133)의 온도가 상대적으로 낮기 때문에 노즐들(113)을 통하여 기화된 증착 물질이 차폐판(133) 위에 증착될 수 있는데, 노즐 히터(134)가 작동됨에 따라 증차가 물질이 차폐판(133)에 증착되는 것을 방지할 수 있다. Since the temperature of the shielding plate 133 is relatively low, a deposition material vaporized through the nozzles 113 may be deposited on the shielding plate 133 . As the nozzle heater 134 is operated, the material is increased by increasing the amount of the shielding plate. (133) can be prevented from being deposited.
도 3 내지 도 4는 본 실시예의 주요부가 도시된 사시도이고, 도 5는 도 1의 A 부분이 확대 도시된 측단면도이다.3 to 4 are perspective views showing main parts of the present embodiment, and FIG. 5 is an enlarged side cross-sectional view of part A of FIG. 1 .
노즐 히터(134)는 노즐들과 인접하도록 차폐판(133)의 상면 또는 하면에 설치될 수 있다.The nozzle heater 134 may be installed on an upper surface or a lower surface of the shielding plate 133 to be adjacent to the nozzles.
도 1, 도 3 내지 도 4에 도시된 바와 같이 증착 물질은 노즐들(113)을 통하여 분사되고, 노즐들(113)을 통과한 증착 물질이 확산되어 피증착물(2)에 도달하게 되며, 피증착물(2)에 형성되는 박막(M)의 두께를 균일하게 형성하기 위하여 증착 물질의 분사량은 도가니 본체(111)의 길이 방향 중심에 비해 그 양측에서 더 많이 분사될 수 있다. 1, 3 to 4, the deposition material is sprayed through the nozzles 113, the deposition material passing through the nozzles 113 is diffused to reach the deposition target (2), In order to uniformly form the thickness of the thin film M formed on the deposition 2 , the injection amount of the deposition material may be more sprayed from both sides of the crucible body 111 than the longitudinal center of the crucible body 111 .
즉, 홀 타입의 노즐들(113a)은 도가니 본체(111)의 길이 방향을 따라 일정 간격을 두고 차폐판의 제1홀들(133h)에 노출되도록 구비되고, 슬릿 타입의 노즐들(113b)은 도가니 본체(111)의 길이 방향 양측에서 일렬로 차폐판의 제2홀(133H)에 노출되도록 구비될 수 있다. That is, the hole-type nozzles 113a are provided to be exposed to the first holes 133h of the shielding plate at regular intervals along the longitudinal direction of the crucible body 111, and the slit-type nozzles 113b are provided in the crucible. The main body 111 may be provided to be exposed to the second hole 133H of the shielding plate in a line on both sides in the longitudinal direction.
슬릿 타입의 노즐들(113b)은 홀 타입의 노즐들(113a)에 비해 밀집되게 위치됨으로, 슬릿 타입의 노즐들(113b)로부터 증착 물질의 분사량을 늘릴 수 있지만, 슬릿 타입의 노즐들(113b) 인근의 차폐판(133) 즉, 차폐판의 제2홀(133H) 주변에 증착 물질이 더욱 쉽게 증착될 수 있다.Since the slit-type nozzles 113b are located more densely than the hole-type nozzles 113a, the amount of deposition material injected from the slit-type nozzles 113b can be increased, but the slit-type nozzles 113b) A deposition material may be more easily deposited around the adjacent shielding plate 133 , that is, around the second hole 133H of the shielding plate.
따라서, 노즐 히터(134)는 차폐판의 제2홀(133H)에 설치되는 것이 바람직하지만, 한정되지 아니한다. Accordingly, the nozzle heater 134 is preferably installed in the second hole 133H of the shielding plate, but is not limited thereto.
노즐 히터(134)는 차폐판(133)의 상면 또는 하면 중 하나에 설치될 수 있고, 노즐 히터(134)는 단시간에 고온으로 가열될 수 있는 고방사율 세라믹 히터로 구성될 수 있으며, 피증착물(2)의 물류 이동 시에 작동될 수 있다. The nozzle heater 134 may be installed on one of the upper surface or the lower surface of the shielding plate 133, and the nozzle heater 134 may be composed of a high emissivity ceramic heater that can be heated to a high temperature in a short time, and the deposited material ( 2) can be operated during logistics movement.
물론, 챔버(1) 측에 구비된 뷰 포트(미도시)를 통하여 노즐들(113) 주변의 차폐판(133)에 증착 물질이 쌓인 것을 감지하고, 차폐판(133)에 쌓인 증착 물질을 제거하기 위하여 선택적으로 작동시킬 수 있다. Of course, through a view port (not shown) provided on the chamber 1 side, the deposition material is detected on the shielding plate 133 around the nozzles 113 , and the deposition material accumulated on the shielding plate 133 is removed. can be selectively activated to
증착 물질이 차폐판(133)에 쌓이면, 피증착물(2)이 챔버(1) 내부에 출입되는 동안, 노즐 히터(134)를 작동시키고, 차폐판(133)에 증착된 증착 물질을 신속하게 휘발시킬 수 있다. When the deposition material is accumulated on the shielding plate 133 , the nozzle heater 134 is operated while the vapor-deposited material 2 enters and exits the chamber 1 , and the deposition material deposited on the shielding plate 133 is quickly volatilized. can do it
하지만, 증착 공정이 진행되는 동안, 노즐 히터(134)를 정지시키고, 차폐판(133)에 일부 증착 물질이 쌓일 수 있으나, 상기와 같이 피증착물(2)의 물류 이동 시에 증착 물질을 휘발시킴으로서, 차폐판(133)에 쌓인 증착 물질이 증착 공정 중 박막의 품질에 영향을 미치는 것을 방지할 수 있다. However, while the deposition process is in progress, the nozzle heater 134 is stopped, and some deposition materials may be accumulated on the shielding plate 133, but as described above, by volatilizing the deposition materials during distribution of the deposition target 2, , it is possible to prevent the deposition material accumulated on the shielding plate 133 from affecting the quality of the thin film during the deposition process.
차폐판(133)은 단열 재질 또는 반사율을 높은 재질의 일종의 플레이트 형상으로 구성될 수 있지만, 도 5에 도시된 바와 같이 상변화에 의해 복사열을 발생시키는 작동 유체가 담긴 포켓 형태로 구성될 수 있다. The shielding plate 133 may be formed in a type of plate shape made of an insulating material or a material having a high reflectance, but may be configured in a pocket shape containing a working fluid that generates radiant heat by a phase change as shown in FIG. 5 .
차폐판(133)은 베이퍼 챔버(vapor chamber) 또는 히트 파이프(heat pipe) 형태로 구성될 수 있다. The shielding plate 133 may be configured in the form of a vapor chamber or a heat pipe.
차폐판의 홀(133H,133h) 주변부는 노즐 캡(112)과 노즐 히터(134)로부터 열을 흡수하고, 차폐판의 홀(133H,133h) 주변부 내부의 유체는 증발한 다음, 차폐판(133) 내부의 이너 유로를 따라 차폐판의 홀(133H,133h) 주변부에서 차폐판(133)의 외측부로 이동될 수 있다.The periphery of the holes 133H and 133h of the shielding plate absorbs heat from the nozzle cap 112 and the nozzle heater 134, and the fluid inside the periphery of the holes 133H and 133h of the shielding plate evaporates, and then the shielding plate 133 ) may be moved from the periphery of the holes 133H and 133h of the shielding plate to the outer part of the shielding plate 133 along the inner inner flow path.
그리고, 차폐판(133)의 외측부는 측면 쿨링 부재(133)와 그 상측으로 열을 방출하고, 차폐판(133)의 외측부 내부의 유체는 응축한 다음, 차폐판(133) 내부의 아우터 유로를 따라 차폐판(133)의 외측부에서 차폐판의 홀(133H,133h) 주변부로 이동될 수 있다.And, the outer part of the shield plate 133 radiates heat to the side cooling member 133 and its upper side, and the fluid inside the outer part of the shield plate 133 is condensed, and then the outer flow path inside the shield plate 133 is closed. Accordingly, it may move from the outer portion of the shielding plate 133 to the peripheral portions of the holes 133H and 133h of the shielding plate.
따라서, 차폐판의 홀(133H,133h) 주변부의 열을 차폐판(133)의 외측부로 이동시킬 수 있고, 차폐판(133) 자체의 핫 스팟의 온도를 감소시킬 수 있다.Accordingly, heat around the holes 133H and 133h of the shielding plate may be moved to the outside of the shielding plate 133 , and the temperature of the hot spot of the shielding plate 133 may be reduced.
물론, 차폐판(133)의 냉각 성능이 높아지기 때문에 증착 공정 중 차폐판(133) 측에 증착 물질이 증착될 수 있지만, 상기에서 설명한 바와 같이 피증착물의 물류 이동 시에 노즐 히터(134)를 선택적으로 작동하여 차폐판(133)에 증착된 증착 물질을 신속하게 제거할 수 있다. Of course, since the cooling performance of the shielding plate 133 is increased, the deposition material may be deposited on the shielding plate 133 side during the deposition process. As a result, the deposition material deposited on the shielding plate 133 can be quickly removed.
이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위에서 다양한 수정 및 변형이 가능할 것이다. The above description is merely illustrative of the technical idea of the present invention, and various modifications and variations will be possible without departing from the essential characteristics of the present invention by those skilled in the art to which the present invention pertains.
따라서, 본 발명에 개시된 실시 예들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시 예에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain, and the scope of the technical spirit of the present invention is not limited by these embodiments.
본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The protection scope of the present invention should be construed by the following claims, and all technical ideas within the equivalent range should be construed as being included in the scope of the present invention.
본 실시예는 OLED 디스플레이 패널을 제조할 때 유리 기판에 유기 물질을 박막 형상으로 증착시키는 증착 장치를 제공할 수 있다. This embodiment may provide a deposition apparatus for depositing an organic material in a thin film shape on a glass substrate when manufacturing an OLED display panel.

Claims (10)

  1. 증착 원료가 증착 물질로 증발시키는 도가니; a crucible in which deposition raw materials are evaporated into deposition materials;
    상기 도가니 외측에 설치되고, 상기 도가니를 가열하는 히터부; 및a heater unit installed outside the crucible and heating the crucible; and
    상기 히터부 외측에 설치되고, 상기 히터부를 차폐시키는 냉각부;를 포함하고,a cooling unit installed outside the heater unit and shielding the heater unit;
    상기 도가니는,The crucible is
    상기 증착 물질을 상측으로 방출시키는 적어도 하나 이상의 노즐을 포함하고,at least one nozzle for discharging the deposition material upward;
    상기 냉각부는,The cooling unit,
    상기 히터부 상측에 이격되고 상기 노즐들의 상부가 돌출되는 적어도 하나 이상의 홀이 구비된 차폐판과,a shielding plate spaced apart from the upper side of the heater unit and provided with at least one hole through which upper portions of the nozzles protrude;
    상기 차폐판의 홀 주변에 설치되는 노즐 히터를 포함하는 증착 장치.and a nozzle heater installed around a hole of the shielding plate.
  2. 제1항에 있어서,According to claim 1,
    상기 노즐 히터는,The nozzle heater,
    상기 차폐판의 상면 또는 하면 중 하나에 설치되는 플레이트 형상으로 구성되는 증착 장치.A deposition apparatus configured in a plate shape installed on one of the upper and lower surfaces of the shielding plate.
  3. 제1항에 있어서,According to claim 1,
    상기 노즐 히터는,The nozzle heater,
    상기 노즐들의 상부가 돌출되는 적어도 하나 이상의 홀이 구비되는 증착 장치.A deposition apparatus having at least one hole through which upper portions of the nozzles protrude.
  4. 제1항에 있어서,According to claim 1,
    상기 노즐 히터는,The nozzle heater is
    고방사율 세라믹 히터로 구성되는 증착 장치.A deposition apparatus consisting of a high emissivity ceramic heater.
  5. 제1항에 있어서,According to claim 1,
    상기 도가니는,The crucible is
    상면이 개방되고, 증착 원료가 증착 물질로 증발되는 도가니 본체와, A crucible body with an open top surface and evaporation of the deposition material as a deposition material;
    상기 도가니 본체 상측에 결합되고 상기 노즐들이 상향 돌출되게 구비되는 도가니 캡을 포함하며, and a crucible cap coupled to the upper side of the crucible body and provided with the nozzles protruding upward,
    상기 차폐판은,The shielding plate is
    상기 도가니 캡 상측에 소정 간격 이격되게 설치되는 증착 장치.A deposition apparatus installed to be spaced apart from each other by a predetermined distance above the crucible cap.
  6. 제1항에 있어서,According to claim 1,
    상기 히터부는,The heater unit,
    상기 도가니 측면에 이격되는 히터 프레임과,A heater frame spaced apart from the side of the crucible,
    상기 히터 프레임의 내벽에 장착되고 상기 도가니와 이격되는 히터와,a heater mounted on the inner wall of the heater frame and spaced apart from the crucible;
    상기 히터 프레임의 상단에 장착되고 상기 도가니 주변까지 연장된 상부 리플렉터(reflector)를 포함하며,and an upper reflector mounted on the top of the heater frame and extending to the periphery of the crucible,
    상기 차폐판은,The shielding plate is
    상기 상부 리플렉터 상측에 소정 간격 이격되게 설치되는 증착 장치.A deposition apparatus installed to be spaced apart from each other by a predetermined distance above the upper reflector.
  7. 제1항에 있어서,According to claim 1,
    상기 냉각부는,The cooling unit,
    상기 히터부 측면에 이격되는 측면 쿨링 블록을 포함하고,It includes a side cooling block spaced apart from the side of the heater,
    상기 차폐판은,The shielding plate is
    상기 측면 쿨링 블록 상단에 설치되는 증착 장치. A deposition device installed on the top of the side cooling block.
  8. 제1항 내지 제7항 중 어느 한 항에 있어서,8. The method according to any one of claims 1 to 7,
    상기 차폐판은,The shielding plate is
    상변화에 의해 복사열을 발생시키는 작동 유체가 담긴 포켓이 내부에 구비되는 증착 장치.A deposition apparatus having a pocket containing a working fluid that generates radiant heat by phase change therein.
  9. 제8항에 있어서,9. The method of claim 8,
    상기 차폐판은,The shielding plate is
    베이퍼 챔버(vapor chamber)로 구성되는 증착 장치.A deposition apparatus comprising a vapor chamber.
  10. 제8항에 있어서,9. The method of claim 8,
    상기 차폐판은,The shielding plate is
    히트 파이프(heat pipe)로 구성되는 증착 장치.A deposition apparatus composed of a heat pipe.
PCT/KR2019/016746 2019-11-29 2019-11-29 Deposition apparatus WO2021107224A1 (en)

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