TWI355093B - - Google Patents
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- Publication number
- TWI355093B TWI355093B TW099115220A TW99115220A TWI355093B TW I355093 B TWI355093 B TW I355093B TW 099115220 A TW099115220 A TW 099115220A TW 99115220 A TW99115220 A TW 99115220A TW I355093 B TWI355093 B TW I355093B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- temperature
- layer
- cooling
- vacuum chamber
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims description 386
- 238000001816 cooling Methods 0.000 claims description 184
- 239000004065 semiconductor Substances 0.000 claims description 70
- 150000002500 ions Chemical class 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 36
- 238000001704 evaporation Methods 0.000 claims description 32
- 230000008020 evaporation Effects 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 31
- 238000004140 cleaning Methods 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- -1 35 oxide Chemical compound 0.000 claims description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims 4
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims 2
- 230000001360 synchronised effect Effects 0.000 claims 1
- 238000013022 venting Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 56
- 239000003245 coal Substances 0.000 description 51
- 230000015572 biosynthetic process Effects 0.000 description 36
- 238000007740 vapor deposition Methods 0.000 description 24
- 239000007789 gas Substances 0.000 description 19
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000010884 ion-beam technique Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 238000010257 thawing Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002689 soil Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000010025 steaming Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000005292 vacuum distillation Methods 0.000 description 2
- QDZOEBFLNHCSSF-PFFBOGFISA-N (2S)-2-[[(2R)-2-[[(2S)-1-[(2S)-6-amino-2-[[(2S)-1-[(2R)-2-amino-5-carbamimidamidopentanoyl]pyrrolidine-2-carbonyl]amino]hexanoyl]pyrrolidine-2-carbonyl]amino]-3-(1H-indol-3-yl)propanoyl]amino]-N-[(2R)-1-[[(2S)-1-[[(2R)-1-[[(2S)-1-[[(2S)-1-amino-4-methyl-1-oxopentan-2-yl]amino]-4-methyl-1-oxopentan-2-yl]amino]-3-(1H-indol-3-yl)-1-oxopropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-3-(1H-indol-3-yl)-1-oxopropan-2-yl]pentanediamide Chemical compound C([C@@H](C(=O)N[C@H](CC=1C2=CC=CC=C2NC=1)C(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CC(C)C)C(N)=O)NC(=O)[C@@H](CC=1C2=CC=CC=C2NC=1)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@@H](CC=1C2=CC=CC=C2NC=1)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](CCCCN)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](N)CCCNC(N)=N)C1=CC=CC=C1 QDZOEBFLNHCSSF-PFFBOGFISA-N 0.000 description 1
- 241000283690 Bos taurus Species 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 240000006829 Ficus sundaica Species 0.000 description 1
- 102100024304 Protachykinin-1 Human genes 0.000 description 1
- 229910003930 SiCb Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 101800003906 Substance P Proteins 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 235000019628 coolness Nutrition 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- ADNPLDHMAVUMIW-CUZNLEPHSA-N substance P Chemical compound C([C@@H](C(=O)NCC(=O)N[C@@H](CC(C)C)C(=O)N[C@@H](CCSC)C(N)=O)NC(=O)[C@H](CC=1C=CC=CC=1)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H](CCC(N)=O)NC(=O)[C@H]1N(CCC1)C(=O)[C@H](CCCCN)NC(=O)[C@H]1N(CCC1)C(=O)[C@@H](N)CCCN=C(N)N)C1=CC=CC=C1 ADNPLDHMAVUMIW-CUZNLEPHSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/085—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal
- G02B5/0858—Multilayer mirrors, i.e. having two or more reflecting layers at least one of the reflecting layers comprising metal the reflecting layers comprising a single metallic layer with one or more dielectric layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2010/057435 WO2011135667A1 (ja) | 2010-04-27 | 2010-04-27 | 半導体発光素子基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201138139A TW201138139A (en) | 2011-11-01 |
| TWI355093B true TWI355093B (https=) | 2011-12-21 |
Family
ID=44193868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099115220A TW201138139A (en) | 2010-04-27 | 2010-05-13 | Process for production of semiconductor light-emitting element substrate |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4684372B1 (https=) |
| KR (1) | KR101087821B1 (https=) |
| CN (1) | CN102439195B (https=) |
| TW (1) | TW201138139A (https=) |
| WO (1) | WO2011135667A1 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013073096A1 (ja) * | 2011-11-15 | 2013-05-23 | パナソニック株式会社 | 真空装置、真空中の熱源を冷却する方法及び薄膜製造方法 |
| WO2013099064A1 (ja) * | 2011-12-28 | 2013-07-04 | キヤノンアネルバ株式会社 | 真空処理装置 |
| US9869013B2 (en) * | 2014-04-25 | 2018-01-16 | Applied Materials, Inc. | Ion assisted deposition top coat of rare-earth oxide |
| WO2017070488A1 (en) * | 2015-10-22 | 2017-04-27 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
| US12057297B2 (en) | 2015-10-22 | 2024-08-06 | Richard DeVito | Deposition system with integrated cooling on a rotating drum |
| JP6524904B2 (ja) | 2015-12-22 | 2019-06-05 | 日亜化学工業株式会社 | 発光装置 |
| JP6588418B2 (ja) | 2016-12-07 | 2019-10-09 | 株式会社神戸製鋼所 | 成膜装置およびそれを用いた成膜物の製造方法、ならびに冷却パネル |
| JP2020007587A (ja) * | 2018-07-04 | 2020-01-16 | 株式会社アルバック | 蒸着装置、および、蒸着方法 |
| JP7316877B2 (ja) * | 2019-08-19 | 2023-07-28 | 株式会社オプトラン | 真空プロセス装置および真空プロセス装置におけるプロセス対象物の冷却方法 |
| WO2021188754A1 (en) * | 2020-03-18 | 2021-09-23 | Richard Devito | Deposition system with integrated cooling on a rotating drum |
| JP2022021080A (ja) * | 2020-07-21 | 2022-02-02 | 株式会社アルバック | 真空成膜装置用の部品及び真空成膜装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06347620A (ja) * | 1993-06-11 | 1994-12-22 | Canon Inc | レプリカミラーの製造方法および製造用型 |
| JP3787410B2 (ja) * | 1997-05-13 | 2006-06-21 | キヤノン株式会社 | 堆積膜製造方法及び光起電力素子の製造方法 |
| JPH11149005A (ja) * | 1997-11-14 | 1999-06-02 | Canon Inc | 内面反射ミラーおよびその製造方法 |
| JP4545504B2 (ja) * | 2004-07-15 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 膜形成方法、発光装置の作製方法 |
| JP4780983B2 (ja) * | 2005-03-17 | 2011-09-28 | 株式会社アルバック | 有機ｅｌ素子製造方法 |
| JP4873455B2 (ja) * | 2006-03-16 | 2012-02-08 | 株式会社シンクロン | 光学薄膜形成方法および装置 |
| JP4597149B2 (ja) * | 2007-01-26 | 2010-12-15 | 株式会社シンクロン | 薄膜形成装置及び薄膜形成方法 |
| JP2009013435A (ja) * | 2007-06-29 | 2009-01-22 | Fujifilm Corp | 基板ホルダ及び真空成膜装置 |
| JP4941197B2 (ja) * | 2007-09-25 | 2012-05-30 | 三菱電機株式会社 | 半導体デバイスの成膜用ホルダ及び成膜用装置 |
| CN101197417B (zh) * | 2008-01-07 | 2010-09-15 | 普光科技（广州）有限公司 | 氮化镓基发光二极管芯片及其制作方法 |
-
2010
- 2010-04-27 JP JP2010535564A patent/JP4684372B1/ja active Active
- 2010-04-27 KR KR1020117003108A patent/KR101087821B1/ko active Active
- 2010-04-27 WO PCT/JP2010/057435 patent/WO2011135667A1/ja not_active Ceased
- 2010-04-27 CN CN201080002384.0A patent/CN102439195B/zh active Active
- 2010-05-13 TW TW099115220A patent/TW201138139A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011135667A1 (ja) | 2011-11-03 |
| JPWO2011135667A1 (ja) | 2013-07-18 |
| TW201138139A (en) | 2011-11-01 |
| JP4684372B1 (ja) | 2011-05-18 |
| HK1168392A1 (en) | 2012-12-28 |
| KR101087821B1 (ko) | 2011-11-30 |
| KR20110125629A (ko) | 2011-11-21 |
| CN102439195A (zh) | 2012-05-02 |
| CN102439195B (zh) | 2014-09-03 |
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