TW201044462A - A method for manufacturing semiconductor devices - Google Patents

A method for manufacturing semiconductor devices Download PDF

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Publication number
TW201044462A
TW201044462A TW099101690A TW99101690A TW201044462A TW 201044462 A TW201044462 A TW 201044462A TW 099101690 A TW099101690 A TW 099101690A TW 99101690 A TW99101690 A TW 99101690A TW 201044462 A TW201044462 A TW 201044462A
Authority
TW
Taiwan
Prior art keywords
insulating layer
layer
annealing
cfx
barrier layer
Prior art date
Application number
TW099101690A
Other languages
English (en)
Chinese (zh)
Inventor
Masahiro Horigome
Takuya Kurotori
Yasuo Kobayashi
Takaaki Matsuoka
Toshihisa Nozawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201044462A publication Critical patent/TW201044462A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
TW099101690A 2009-01-22 2010-01-21 A method for manufacturing semiconductor devices TW201044462A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20575209P 2009-01-22 2009-01-22
US20797109P 2009-02-17 2009-02-17

Publications (1)

Publication Number Publication Date
TW201044462A true TW201044462A (en) 2010-12-16

Family

ID=42355815

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099101690A TW201044462A (en) 2009-01-22 2010-01-21 A method for manufacturing semiconductor devices

Country Status (6)

Country Link
US (1) US8765605B2 (https=)
JP (1) JP5271426B2 (https=)
KR (1) KR101269925B1 (https=)
CN (1) CN102292798A (https=)
TW (1) TW201044462A (https=)
WO (1) WO2010084759A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503871B (zh) * 2011-10-27 2015-10-11 東京威力科創股份有限公司 膜形成設備及其操作方法

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JP5710606B2 (ja) * 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
PL2683251T3 (pl) 2011-03-11 2021-12-13 Intercontinental Great Brands Llc Sposób wytwarzania wielowarstwowych wyrobów cukierniczych
JP5912180B2 (ja) 2011-07-21 2016-04-27 インターコンチネンタル グレート ブランズ エルエルシー チューインガムの形成および冷却のためのシステムおよび方法
US8691709B2 (en) 2011-09-24 2014-04-08 Tokyo Electron Limited Method of forming metal carbide barrier layers for fluorocarbon films
KR101319929B1 (ko) * 2011-11-03 2013-10-18 주식회사 우신산업 차량용 사이드 리피터의 제조방법
US9111939B2 (en) * 2012-07-27 2015-08-18 Intel Corporation Metallization of fluorocarbon-based dielectric for interconnects
JP2014103165A (ja) * 2012-11-16 2014-06-05 Tokyo Electron Ltd 半導体素子の製造方法、および半導体素子の製造装置
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
EP3131405A1 (en) 2014-03-03 2017-02-22 Intercontinental Great Brands LLC Method for manufacturing a comestible
CN104078344B (zh) * 2014-07-11 2017-04-05 上海华力微电子有限公司 减少自对准硅化镍尖峰缺陷和管道缺陷的方法
KR102378538B1 (ko) * 2015-08-11 2022-03-25 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102361083B1 (ko) * 2015-09-01 2022-02-11 한국화학연구원 탄화불소 박막의 제조방법 및 이의 제조장치
WO2017039339A1 (ko) * 2015-09-01 2017-03-09 한국화학연구원 탄화불소 박막의 제조방법
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US12230539B2 (en) * 2018-08-01 2025-02-18 Texas Instruments Incorporated Wafer chip scale packaging with ball attach before repassivation
US11527413B2 (en) * 2021-01-29 2022-12-13 Tokyo Electron Limited Cyclic plasma etch process
US12317554B2 (en) * 2021-04-09 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structures for semiconductor devices
TW202503924A (zh) * 2023-07-10 2025-01-16 美商應用材料股份有限公司 形成互連結構的方法

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Publication number Priority date Publication date Assignee Title
EP1052694A4 (en) * 1998-01-10 2004-11-24 Tokyo Electron Ltd SEMICONDUCTOR ARRANGEMENT WITH INSULATING FILM BASED ON FLUORIDE CARBON
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
JP4005295B2 (ja) 2000-03-31 2007-11-07 富士通株式会社 半導体装置の製造方法
US20050064701A1 (en) * 2003-09-19 2005-03-24 International Business Machines Corporation Formation of low resistance via contacts in interconnect structures
US7776736B2 (en) 2004-05-11 2010-08-17 Tokyo Electron Limited Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same
JP4555143B2 (ja) * 2004-05-11 2010-09-29 東京エレクトロン株式会社 基板の処理方法
US8193642B2 (en) * 2005-06-20 2012-06-05 Tohoku University Interlayer insulating film, interconnection structure, and methods of manufacturing the same
JP2007067336A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
US7902641B2 (en) * 2008-07-24 2011-03-08 Tokyo Electron Limited Semiconductor device and manufacturing method therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI503871B (zh) * 2011-10-27 2015-10-11 東京威力科創股份有限公司 膜形成設備及其操作方法

Also Published As

Publication number Publication date
JP2012516065A (ja) 2012-07-12
CN102292798A (zh) 2011-12-21
WO2010084759A1 (en) 2010-07-29
KR20110105847A (ko) 2011-09-27
US8765605B2 (en) 2014-07-01
KR101269925B1 (ko) 2013-05-31
US20110318919A1 (en) 2011-12-29
JP5271426B2 (ja) 2013-08-21

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