KR101269925B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR101269925B1
KR101269925B1 KR1020117017379A KR20117017379A KR101269925B1 KR 101269925 B1 KR101269925 B1 KR 101269925B1 KR 1020117017379 A KR1020117017379 A KR 1020117017379A KR 20117017379 A KR20117017379 A KR 20117017379A KR 101269925 B1 KR101269925 B1 KR 101269925B1
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South Korea
Prior art keywords
insulating layer
layer
cfx
barrier layer
degrees
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Expired - Fee Related
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KR1020117017379A
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English (en)
Korean (ko)
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KR20110105847A (ko
Inventor
마사히로 호리고메
타쿠야 구로토리
야스오 고바야시
타카아키 마츠오카
토시히사 노자와
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/412—Deposition of metallic or metal-silicide materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/44—Physical vapour deposition [PVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6902—Inorganic materials composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/096—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by contacting with gases, liquids or plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020117017379A 2009-01-22 2010-01-22 반도체 장치의 제조 방법 Expired - Fee Related KR101269925B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US20575209P 2009-01-22 2009-01-22
US61/205,752 2009-01-22
US20797109P 2009-02-17 2009-02-17
US61/207,971 2009-02-17
PCT/JP2010/000347 WO2010084759A1 (en) 2009-01-22 2010-01-22 Surface treatment for a fluorocarbon film

Publications (2)

Publication Number Publication Date
KR20110105847A KR20110105847A (ko) 2011-09-27
KR101269925B1 true KR101269925B1 (ko) 2013-05-31

Family

ID=42355815

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117017379A Expired - Fee Related KR101269925B1 (ko) 2009-01-22 2010-01-22 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (1) US8765605B2 (https=)
JP (1) JP5271426B2 (https=)
KR (1) KR101269925B1 (https=)
CN (1) CN102292798A (https=)
TW (1) TW201044462A (https=)
WO (1) WO2010084759A1 (https=)

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Publication number Priority date Publication date Assignee Title
JP5710606B2 (ja) * 2009-06-26 2015-04-30 東京エレクトロン株式会社 アモルファスカーボンのドーピングによるフルオロカーボン（ＣＦｘ）の接合の改善
PL2683251T3 (pl) 2011-03-11 2021-12-13 Intercontinental Great Brands Llc Sposób wytwarzania wielowarstwowych wyrobów cukierniczych
JP5912180B2 (ja) 2011-07-21 2016-04-27 インターコンチネンタル グレート ブランズ エルエルシー チューインガムの形成および冷却のためのシステムおよび方法
US8691709B2 (en) 2011-09-24 2014-04-08 Tokyo Electron Limited Method of forming metal carbide barrier layers for fluorocarbon films
JP5807511B2 (ja) * 2011-10-27 2015-11-10 東京エレクトロン株式会社 成膜装置及びその運用方法
KR101319929B1 (ko) * 2011-11-03 2013-10-18 주식회사 우신산업 차량용 사이드 리피터의 제조방법
US9111939B2 (en) * 2012-07-27 2015-08-18 Intel Corporation Metallization of fluorocarbon-based dielectric for interconnects
JP2014103165A (ja) * 2012-11-16 2014-06-05 Tokyo Electron Ltd 半導体素子の製造方法、および半導体素子の製造装置
US9865501B2 (en) * 2013-03-06 2018-01-09 Lam Research Corporation Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer
EP3131405A1 (en) 2014-03-03 2017-02-22 Intercontinental Great Brands LLC Method for manufacturing a comestible
CN104078344B (zh) * 2014-07-11 2017-04-05 上海华力微电子有限公司 减少自对准硅化镍尖峰缺陷和管道缺陷的方法
KR102378538B1 (ko) * 2015-08-11 2022-03-25 삼성디스플레이 주식회사 표시 장치의 제조 방법
KR102361083B1 (ko) * 2015-09-01 2022-02-11 한국화학연구원 탄화불소 박막의 제조방법 및 이의 제조장치
WO2017039339A1 (ko) * 2015-09-01 2017-03-09 한국화학연구원 탄화불소 박막의 제조방법
US10443146B2 (en) 2017-03-30 2019-10-15 Lam Research Corporation Monitoring surface oxide on seed layers during electroplating
US12230539B2 (en) * 2018-08-01 2025-02-18 Texas Instruments Incorporated Wafer chip scale packaging with ball attach before repassivation
US11527413B2 (en) * 2021-01-29 2022-12-13 Tokyo Electron Limited Cyclic plasma etch process
US12317554B2 (en) * 2021-04-09 2025-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Contact structures for semiconductor devices
TW202503924A (zh) * 2023-07-10 2025-01-16 美商應用材料股份有限公司 形成互連結構的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284358A (ja) 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置の製造方法及び半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1052694A4 (en) * 1998-01-10 2004-11-24 Tokyo Electron Ltd SEMICONDUCTOR ARRANGEMENT WITH INSULATING FILM BASED ON FLUORIDE CARBON
JP3189781B2 (ja) * 1998-04-08 2001-07-16 日本電気株式会社 半導体装置の製造方法
US20050064701A1 (en) * 2003-09-19 2005-03-24 International Business Machines Corporation Formation of low resistance via contacts in interconnect structures
US7776736B2 (en) 2004-05-11 2010-08-17 Tokyo Electron Limited Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same
JP4555143B2 (ja) * 2004-05-11 2010-09-29 東京エレクトロン株式会社 基板の処理方法
US8193642B2 (en) * 2005-06-20 2012-06-05 Tohoku University Interlayer insulating film, interconnection structure, and methods of manufacturing the same
JP2007067336A (ja) * 2005-09-02 2007-03-15 Matsushita Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
US7902641B2 (en) * 2008-07-24 2011-03-08 Tokyo Electron Limited Semiconductor device and manufacturing method therefor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284358A (ja) 2000-03-31 2001-10-12 Fujitsu Ltd 半導体装置の製造方法及び半導体装置

Also Published As

Publication number Publication date
JP2012516065A (ja) 2012-07-12
CN102292798A (zh) 2011-12-21
WO2010084759A1 (en) 2010-07-29
KR20110105847A (ko) 2011-09-27
TW201044462A (en) 2010-12-16
US8765605B2 (en) 2014-07-01
US20110318919A1 (en) 2011-12-29
JP5271426B2 (ja) 2013-08-21

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